Isc N-Channel MOSFET Transistor IPA65R380C6: INCHANGE Semiconductor

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INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IPA65R380C6

·FEATURES
·With TO-220F packaging
·High speed switching
·Very high commutation ruggedness
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz

·APPLICATIONS
·PFC stages, hard switching PWM stages and resonant switching
·PC Silverbox, Adapter, LCD & PDP TV
·Lighting, Server, Telecom and UPS

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 650 V

VGSS Gate-Source Voltage ±20 V

Drain Current-Continuous@TC=25℃ 10.6


ID A
TC=100℃ 6.7

IDM Drain Current-Single Pulsed 29 A

PD Total Dissipation 31 W

Tj Operating Junction Temperature -55~150 ℃

Tstg Storage Temperature -55~150 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth(ch-c) Channel-to-case thermal resistance 4.0 ℃/W

Rth(ch-a) Channel-to-ambient thermal resistance 80 ℃/W

isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IPA65R380C6

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 650 V

VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.32mA 2.5 3.5 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID=3.2A 340 380 mΩ

IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ±0.1 μA

IDSS Drain-Source Leakage Current VDS= 650V; VGS= 0V 1 μA

VSDF Diode forward voltage ISD=4.9A, VGS = 0 V 0.9 V

NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark

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