V23990-P549-A/ C-PM

preliminary datasheet

flowPIM 0 1200 V/8 A

Features flowPIM 0

● Clip in PCB mountin

● Trench Fieldstop IGBT's for low saturation losses
● Optional w/o BRC

Target Applications Schematic

● Industrial Drives
● Embedded Drives

Types

● V23990-P549-A-PM
● V23990-P549-C-PM without BRC

Maximum Ratings
Tj=25°C, unless otherwise specified

Parameter Symbol Condition Value Unit

Input Rectifier Diode

Repetitive peak reverse voltage VRRM 1600 V

Th=80°C 27
DC forward current IFAV Tj=Tjmax A
Tc=80°C 37

Surge forward current IFSM 220 A

tp=10ms Tj=25°C
I2t-value I2t 200 A2s

Th=80°C 33
Power dissipation per Diode Ptot Tj=Tjmax W
Tc=80°C 50

Maximum Junction Temperature Tjmax 150 °C

Inverter Transistor

Collector-emitter break down voltage VCE 1200 V

Th=80°C 13
DC collector current IC Tj=Tjmax A
Tc=80°C 16

Repetitive peak collector current ICpulse tp limited by Tjmax 24 A

Turn off safe operating area VCE ≤ 1200V, Tj ≤ Top max 24 A

Th=80°C 35
Power dissipation per IGBT Ptot Tj=Tjmax W
Tc=80°C 53

Gate-emitter peak voltage VGE ±20 V

tSC Tj≤150°C 10 μs
Short circuit ratings
VCC VGE=15V 1200 V

Maximum Junction Temperature Tjmax 150 °C

copyright Vincotech 1 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Maximum Ratings
Tj=25°C, unless otherwise specified

Parameter Symbol Condition Value Unit

Inverter Diode

Peak Repetitive Reverse Voltage VRRM Tj=25°C 1200 V

Th=80°C 11
DC forward current IF Tj=Tjmax A
Tc=80°C 14

Repetitive peak forward current IFRM tp limited by Tjmax 9 A

Th=80°C 29
Power dissipation per Diode Ptot Tj=Tjmax W
Tc=80°C 44

Maximum Junction Temperature Tjmax 175 °C

Brake Transistor
1200
Collector-emitter break down voltage VCE V

Th=80°C 12
DC collector current IC Tj=Tjmax A
Tc=80°C 16

Repetitive peak collector current ICpuls tp limited by Tjmax 24 A

Turn off safe operating area VCE ≤ 1200V, Tj ≤ Top max 24 A

Th=80°C 33
Power dissipation per IGBT Ptot Tj=Tjmax W
Tc=80°C 51

Gate-emitter peak voltage VGE ±20 V

tSC Tj≤150°C 10 μs
Short circuit ratings
VCC VGE=15V 1200 V

Maximum Junction Temperature Tjmax 150 °C

Brake Diode
Tj=25°C 1200
Peak Repetitive Reverse Voltage VRRM V

Th=80°C 7
DC forward current IF Tj=Tjmax A
Tc=80°C 7

Repetitive peak forward current IFRM tp limited by Tjmax 8 A

Th=80°C 18
Power dissipation per Diode Ptot Tj=Tjmax W
Tc=80°C 27

Maximum Junction Temperature Tjmax 150 °C

Thermal Properties

Storage temperature Tstg -40…+125 °C

Operation temperature under switching condition Top -40…+(Tjmax - 25) °C

Insulation Properties

Insulation voltage Vis t=2s DC voltage 4000 V

Creepage distance min 12,7 mm

Clearance min 12,7 mm

Comparative tracking index CTI >200

copyright Vincotech 2 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Characteristic Values

Parameter Symbol Conditions Value Unit

Vr [V] or IC [A] or
VGE [V] or
VCE [V] or IF [A] or Tj Min Typ Max
VGS [V]
VDS [V] ID [A]

Input Rectifier Diode

VF Tj=25°C 0,8 1,20 1,8

Forward voltage 25 V
Tj=125°C 1,17
Tj=25°C 0,93
Threshold voltage (for power loss calc. only) Vto 25 V
Tj=125°C 0,80
Tj=25°C 11
Slope resistance (for power loss calc. only) rt 25 mΩ
Tj=125°C 15
Tj=25°C 0,01
Reverse current Ir 1600 mA
Tj=125°C
Thermal grease
Thermal resistance chip to heatsink per chip RthJH thickness≤50um 2,13 K/W
λ = 1 W/mK

Inverter Transistor
Tj=25°C 5 5,8 6,5
Gate emitter threshold voltage VGE(th) VCE=VGE 0,0003 V
Tj=125°C
Tj=25°C 1,35 1,64 2,05
Collector-emitter saturation voltage VCE(sat) 15 8 V
Tj=125°C 1,83
Tj=25°C 0,05
Collector-emitter cut-off current incl. Diode ICES 0 1200 mA
Tj=125°C
Tj=25°C 120
Gate-emitter leakage current IGES 20 0 nA
Tj=125°C
Integrated Gate resistor Rgint none Ω
Tj=25°C 133
Turn-on delay time td(on)
Tj=125°C 132
Tj=25°C 17
Rise time tr
Tj=125°C 23
ns
Tj=25°C 233
Turn-off delay time td(off)
Rgoff=64 Ω Tj=125°C 291
±15 600 10
Rgon=64 Ω Tj=25°C 144
Fall time tf
Tj=125°C 159
Tj=25°C 0,82
Turn-on energy loss per pulse Eon
Tj=125°C 1,13
mWs
Tj=25°C 0,66
Turn-off energy loss per pulse Eoff
Tj=125°C 1,01
Input capacitance Cies 605

Output capacitance Coss f=1MHz 0 25 Tj=25°C 37 pF

Reverse transfer capacitance Crss 29

Gate charge QGate ±15 960 8 Tj=25°C 52 nC

Thermal grease
Thermal resistance chip to heatsink per chip RthJH thickness≤50um 1,99 K/W
λ = 1 W/mK

Inverter Diode
Tj=25°C 1,46 2,25 2,61
Diode forward voltage VF 0,00025 V
Tj=150°C 1,73
Tj=25°C 11
Peak reverse recovery current IRRM A
Tj=150°C 12
Tj=25°C 329
Reverse recovery time trr ns
Tj=150°C 504
Tj=25°C 1,31
Reverse recovered charge Qrr Rgon=64 Ω ±15 600 10 μC
Tj=150°C 2,30
di(rec)max Tj=25°C 90
Peak rate of fall of recovery current A/μs
/dt Tj=150°C 39
Tj=25°C 0,49
Reverse recovered energy Erec mWs
Tj=150°C 0,93
Thermal grease
Thermal resistance chip to heatsink per chip RthJH thickness≤50um 3,30 K/W
λ = 1 W/mK

copyright Vincotech 3 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Characteristic Values

Parameter Symbol Conditions Value Unit

Vr [V] or IC [A] or
VGE [V] or
VCE [V] or IF [A] or Tj Min Typ Max
VGS [V]
VDS [V] ID [A]

Brake Transistor

VGE(th) VCE=VGE Tj=25°C 5 5,8 6,5

Gate emitter threshold voltage 0,0003 V
Tj=125°C
Tj=25°C 1,35 1,72 2,05
Collector-emitter saturation voltage VCE(sat) 15 8 V
Tj=125°C 1,96
Tj=25°C 0,05
Collector-emitter cut-off incl diode ICES 0 1200 mA
Tj=125°C
Tj=25°C 120
Gate-emitter leakage current IGES 20 0 nA
Tj=125°C
Rgint none
Integrated Gate resistor Ω
Tj=25°C 131
Turn-on delay time td(on)
Tj=125°C 130
Tj=25°C 15
Rise time tr
Tj=125°C 20
ns
td(off) Tj=25°C 250
Turn-off delay time
Rgoff=64 Ω Tj=125°C 312
±15 600 10
Rgon=64 Ω Tj=25°C 93
Fall time tf
Tj=125°C 159
Tj=25°C 0,46
Turn-on energy loss per pulse Eon
Tj=125°C 0,58
mWs
Tj=25°C 0,54
Turn-off energy loss per pulse Eoff
Tj=125°C 0,82
Input capacitance Cies 605

Output capacitance Coss f=1MHz 0 25 Tj=25°C 37 pF

Reverse transfer capacitance Crss 29

Gate charge QGate ±15 960 8 Tj=25°C 52 nC

Thermal grease
Thermal resistance chip to heatsink per chip RthJH thickness≤50um 2,09 K/W
λ = 1 W/mK

Brake Diode
Tj=25°C 1 1,76 2,35
Diode forward voltage VF 4 V
Tj=125°C 1,87
Tj=25°C 250
Reverse leakage current Ir Rgon=64 Ω ±15 600 10 μA
Tj=125°C
IRRM Tj=25°C 7
Peak reverse recovery current A
Tj=125°C 8
Tj=25°C 321
Reverse recovery time trr ns
Rgon=64 Ω Tj=125°C 476
Rgon=64 Ω Tj=25°C 0,74
Reverse recovered charge Qrr ±15 600 10 μC
Tj=125°C 0,74
di(rec)max Tj=25°C 101
Peak rate of fall of recovery current A/μs
/dt Tj=125°C 59
Tj=25°C 0,30
Reverse recovery energy Erec mWs
Tj=125°C 0,51
Thermal grease
Thermal resistance chip to heatsink per chip RthJH thickness≤50um 3,97 K/W
λ = 1 W/mK

Thermistor

Rated resistance R T=25°C 22000 Ω

Deviation of R100 ΔR/R R100=1486 Ω T=100°C -5 5 %

Power dissipation P T=25°C 210 mW

Power dissipation constant T=25°C 3,5 mW/K

B-value B(25/50) Tol. ±3% T=25°C K

B-value B(25/100) Tol. ±3% T=25°C 4000 K

Vincotech NTC Reference A

copyright Vincotech 4 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Output Inverter

Figure 1 Output inverter IGBT Figure 2 Output inverter IGBT

Typical output characteristics Typical output characteristics
IC = f(VCE) IC = f(VCE)
40 40

IC (A)
IC (A)

30 30

20 20

10 10

0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5

At At
tp = 250 μs tp = 250 μs
Tj = 25 °C Tj = 125 °C
VGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V

Figure 3 Output inverter IGBT Figure 4 Output inverter FWD

Typical transfer characteristics Typical diode forward current as
IC = f(VGE) a function of forward voltage
IF = f(VF)
12 60
IF (A)
IC (A)

10 50

8 40

6 30

4 20

Tj = Tjmax-25°C

2 Tj = Tjmax-25°C Tj = 25°C 10
Tj = 25°C

0 0
0 2 4 6 8 10 12 0 1 2 3 4 5 6
V GE (V) V F (V)

At At
tp = 250 μs tp = 250 μs
VCE = 10 V

copyright Vincotech 5 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Output Inverter

Figure 5 Output inverter IGBT Figure 6 Output inverter IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(IC) E = f(RG)
3,0 2,0
E (mWs)

E (mWs)
Eon High T
2,5 Eon High T
1,5

2,0

Eon Low T Eon Low T

Eoff High T Eoff High T

1,5 1,0

Eoff Low T

1,0
Eoff Low T

0,5

0,5

0,0 0,0
0 30 60 90 120 150
0 5 10 15 I C (A) 20 RG( Ω )

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
VCE = 600 V VCE = 600 V
VGE = ±15 V VGE = ±15 V
Rgon = 64 Ω IC = 10 A
Rgoff = 64 Ω

Figure 7 Output inverter FWD Figure 8 Output inverter FWD

Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
Erec = f(IC) Erec = f(RG)
1,5 1,5
E (mWs)

E (mWs)

1,2 1,2
Tj = Tjmax -25°C Erec

Tj = Tjmax -25°C
0,9 0,9
Erec

Tj = 25°C Erec
0,6 0,6
Tj = 25°C
Erec

0,3 0,3

0,0 0,0
0 5 10 15 I C (A) 20 0 30 60 90 120 RG( Ω ) 150

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
VCE = 600 V VCE = 600 V
VGE = ±15 V VGE = ±15 V
Rgon = 64 Ω IC = 10 A

copyright Vincotech 6 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Output Inverter

Figure 9 Output inverter IGBT Figure 10 Output inverter IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(IC) t = f(RG)
1,00 1,00

t ( μs)
t ( μs)

tdoff
tdoff tdon
ttfdon tf
0,10 0,10

tr
tr

0,01 0,01

0,00 0,00
0 2 4 6 8 10 12 14 16 18 20 0 30 60 90 120 150
I C (A) RG( Ω )

With an inductive load at With an inductive load at

Tj = 125 °C Tj = 125 °C
VCE = 600 V VCE = 600 V
VGE = ±15 V VGE = ±15 V
Rgon = 64 Ω IC = 10 A
Rgoff = 64 Ω

Figure 11 Output inverter FWD Figure 12 Output inverter FWD

Typical reverse recovery time as a Typical reverse recovery time as a
function of collector current function of IGBT turn on gate resistor
trr = f(IC) trr = f(Rgon)
0,8 0,8
trr
t rr( μs)
t rr( μs)

trr

Tj = Tjmax -25°C
Tj = Tjmax -25°C
0,6 0,6
trr

trr Tj = 25°C
Tj = 25°C 0,4
0,4

0,2 0,2

0,0 0,0
0 5 10 15 20 0 30 60 90 120 150
I C (A) R g on ( Ω )

At At
Tj = 25/125 °C Tj = 25/125 °C
VCE = 600 V VR = 600 V
VGE = ±15 V IF = 10 A
Rgon = 64 Ω VGE = ±15 V

copyright Vincotech 7 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Output Inverter

Figure 13 Output inverter FWD Figure 14 Output inverter FWD

Typical reverse recovery charge as a Typical reverse recovery charge as a
function of collector current function of IGBT turn on gate resistor
Qrr = f(IC) Qrr = f(Rgon)

4 2,5
Qrr

Qrr( μC)
Qrr( μC)

Tj = Tjmax -25°C
2,0
Qrr
3
Tj = Tjmax -25°C

1,5
Tj = 25°C Qrr
2

Qrr
Tj = 25°C 1,0

1
0,5

0 0,0
0 5 10 15 20 0 30 60 90 120 150
I C (A) R g on ( Ω)
At
At At
Tj = 25/125 °C Tj = 25/125 °C
VCE = 600 V VR = 600 V
VGE = ±15 V IF = 10 A
Rgon = 64 Ω VGE = ±15 V

Figure 15 Output inverter FWD Figure 16 Output inverter FWD

Typical reverse recovery current as a Typical reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
IRRM = f(IC) IRRM = f(Rgon)
16 50
IrrM (A)
IrrM (A)

Tj = Tjmax -25°C 40
12
IRRM
Tj = 25°C IRRM
30

20

4 Tj = Tjmax - 25°C
10
IRRM
Tj = 25°C
IRRM

0 0
0 5 10 15 20 0 30 60 90 120 150
I C (A) R gon ( Ω )

At At
Tj = 25/125 °C Tj = 25/125 °C
VCE = 600 V VR = 600 V
VGE = ±15 V IF = 10 A
Rgon = 64 Ω VGE = ±15 V

copyright Vincotech 8 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Output Inverter

Figure 17 Output inverter FWD Figure 18 Output inverter FWD

Typical rate of fall of forward Typical rate of fall of forward
and reverse recovery current as a and reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(IC) dI0/dt,dIrec/dt = f(Rgon)
600 3500

direc / dt (A/ μs)

direc / dt (A/μ s)

dI0/dt dI0/dt
dIrec/dt dIrec/dt
3000
500

2500
400

2000

300

1500

200
1000

100
500

0 0
0 5 10 15 20 0 30 60 90 120
I C (A) R gon ( Ω ) 150

At At
Tj = 25/125 °C Tj = 25/125 °C
VCE = 600 V VR = 600 V
VGE = ±15 V IF = 10 A
Rgon = 64 Ω VGE = ±15 V

Figure 19 Output inverter IGBT Figure 20 Output inverter FWD

IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
ZthJH = f(tp) ZthJH = f(tp)
101 101
Zth-JH (K/W)
ZthJH (K/W)

100
100

D = 0,5 D = 0,5
0,2 0,2
-1 -1
10
0,1 10
0,1
0,05 0,05
0,02 0,02
0,01 0,01
0,005 0,005
0.000 0.000
10-2 10-2
10-5 10-4 10-3 10-2 10-1 100
t p (s) 1011
t p (s)
10-5 10-4 10-3 10-2 10-1 100 1011

At At
D= tp / T D= tp / T
RthJH = 1,99 K/W RthJH = 1,93 K/W RthJH = 3,30 K/W RthJH = 3,20 K/W

IGBT thermal model values FWD thermal model values

Thermal grease Phase change interface Thermal grease Phase change interface
R (C/W) Tau (s) R (C/W) Tau (s) R (C/W) Tau (s) R (C/W) Tau (s)
0,09 4,8E+00 0,09 4,7E+00 0,04 6,0E+01 0,00 0,0E+00
0,35 4,4E-01 0,34 4,2E-01 0,23 1,4E+00 0,00 0,0E+00
0,86 1,0E-01 0,83 9,7E-02 1,03 1,5E-01 0,00 0,0E+00
0,39 1,6E-02 0,37 1,5E-02 0,99 4,1E-02 0,00 0,0E+00
0,17 2,9E-03 0,16 2,8E-03 0,63 6,0E-03 0,00 0,0E+00
0,14 3,5E-04 0,14 3,4E-04 0,29 1,1E-03 0,00 0,0E+00

copyright Vincotech 9 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Output Inverter

Figure 21 Output inverter IGBT Figure 22 Output inverter IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IC = f(Th)
80 25

IC (A)
Ptot (W)

20
60

15

40

10

20
5

0 0
0 50 100 150 T h ( o C) 200 0 50 100 150 T h ( o C) 200

At At
Tj = 175 °C Tj = 175 °C
VGE = 15 V

Figure 23 Output inverter FWD Figure 24 Output inverter FWD

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IF = f(Th)
60 20
IF (A)
Ptot (W)

50

15

40

30 10

20

10

0
0
0 50 100 150 200
T h ( o C) 0 50 100 150 T h ( o C) 200

At At
Tj = 175 °C Tj = 175 °C

copyright Vincotech 10 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Output Inverter

Figure 25 Output inverter IGBT Figure 26 Output inverter IGBT

Safe operating area as a function Gate voltage vs Gate charge
of collector-emitter voltage
IC = f(VCE) VGE = f(QGE)
20

VGE (V)
IC (A)

18

10
3 240V
16

14 960V
10mS 10uS
100uS
102 12

10
1mS
DC
100mS
10
1 8

4
100

0
10-1 0 10 20 30 40 50 60 Q (nC) 70
100 101 102 103 V CE (V) g

At At
D= single pulse IC = 10 A
Th = 80 ºC
VGE = ±15 V
Tj = Tjmax ºC

Figure 27 Output inverter IGBT Figure 28 Output inverter IGBT

Short circuit withstand time as a function of Typical short circuit collector current as a function of
gate-emitter voltage gate-emitter voltage
tsc = f(VGE) VGE = f(QGE)
16 100
tsc (μS)

IC(sc)

14

80
12

10
60

40
6

4
20

0 0
12 13 14 15 16 17 12 14 16 18 20
V GE (V) V GE (V)

At At
VCE = 1200 V VCE ≤ 1200 V
Tj ≤ 175 ºC Tj = 175 ºC

copyright Vincotech 11 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet
Figure 29 IGBT
Reverse bias safe operating area

IC = f(VCE)
20
IC (A)

IC MAX
16

Ic CHIP
Ic MODULE
12

VCE MAX
4

0
0 200 400 600 800 1000 1200 1400
V CE (V)

At
Tj = Tjmax-25 ºC
Uccminus=Uccplus
Switching mode : 3 level switching

copyright Vincotech 12 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Brake

Figure 1 Brake IGBT Figure 2 Brake IGBT

Typical output characteristics Typical output characteristics
IC = f(VCE) IC = f(VCE)
40 40
IC (A)

IC (A)
35 35

30 30

25 25

20 20

15 15

10 10

5 5

0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5

At At
tp = 250 μs tp = 250 μs
Tj = 25 °C Tj = 125 °C
VGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V

Figure 3 Brake IGBT Figure 4 Brake FWD

Typical transfer characteristics Typical diode forward current as
IC = f(VGE) a function of forward voltage
IF = f(VF)
10 20
IC (A)

IF (A)

8
15

10

5
2 Tj = Tjmax-25°C
Tj = Tjmax-25°C Tj = 25°C Tj = 25°C

0 0
0 2 4 6 8 10 V GE (V) 12 0 1 2 3 V F (V) 4

At At
tp = 250 μs tp = 250 μs
VCE = 10 V

copyright Vincotech 13 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Brake

Figure 5 Brake IGBT Figure 6 Brake IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(IC) E = f(RG)
1,5 1,0
Eoff
E (mWs)

E (mWs)
Tj = Tjmax -25°C Eon
Eoff
1,2 0,8
Eon

Eon
Eoff
0,9 0,6
Eoff

Tj = Tjmax -25°C Eon

0,6 0,4

Tj = 25°C

0,3 0,2

Tj = 25°C

0,0 0,0
0 30 60 90 120 150
0 3 6 9 12
I C (A)
15 RG (Ω )

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
VCE = 600 V VCE = 600 V
VGE = ±15 V VGE = ±15 V
Rgon = 64 Ω IC = 8 A
Rgoff = 64 Ω

Figure 7 Brake FWD Figure 8 Brake FWD

Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
Erec = f(IC) Erec = f(RG)
0,8 0,8
E (mWs)

E (mWs)

Tj = Tjmax -25°C

0,6 0,6
Erec

Tj = Tjmax - 25°C
Erec

0,4 0,4
Erec Tj = 25°C

Tj = 25°C Erec
0,2 0,2

0,0 0,0
0 3 6 9 12 15 0 30 60 90 120 150
I C (A) RG (Ω )

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
VCE = 600 V VCE = 600 V
VGE = ±15 V VGE = ±15 V
Rgon = 64 Ω IC = 8 A

copyright Vincotech 14 Revision: 2

 V23990-P549-A/ C-PM
preliminary datasheet

Brake

Figure 9 Brake IGBT Figure 10 Brake IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(IC) t = f(RG)
1,00 1,00

t ( μs)
tdoff
t ( μs)

tdoff
tdon
tdon tf
0,10 0,10

tf

tr
tr
0,01 0,01

0,00 0,00
0 3 6 9 12 15 0 30 60 90 120 150
I C (A) RG (Ω )

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
VCE = 600 V VCE = 600 V
VGE = ±15 V VGE = ±15 V
Rgon = 64 Ω IC = 8 A
Rgoff = 64 Ω

Figure 11 Brake IGBT Figure 12 Brake FWD

IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
ZthJH = f(tp) ZthJH = f(tp)
101 101
ZthJH (K/W)

ZthJH (K/W)

0
10 100

D = 0,5
D = 0,5
10
-1 0,2 10-1 0,2
0,1
0,1
0,05
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0.000
0.000
10-2 10-2
t p (s) t p (s)
10-5 10-4 10-3 10-2 10-1 100 101 1 10-5 10-4 10-3 10-2 10-1 100 101 1

At D= tp / T At D= tp / T
Thermal grease Phase change interface Thermal grease Phase change interface
RthJH = 2,09 K/W RthJH = 0,60 K/W RthJH = 3,97 K/W RthJH = 1,27 K/W

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Brake

Figure 13 Brake IGBT Figure 14 Brake IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IC = f(Th)
80 20
Ptot (W)

IC (A)
60 15

40 10

20 5

0 0
0 50 100 150 T h ( o C) 200 0 50 100 150 T h ( o C) 200

At At
Tj = 175 ºC Tj = 175 ºC
VGE = 15 V

Figure 15 Brake FWD Figure 16 Brake FWD

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IF = f(Th)
40 10
Ptot (W)

IF (A)

8
30

20

10
2

0 0
0 50 100 150 Th ( o C) 200 0 50 100 150 Th ( o C) 200

At At
Tj = 175 ºC Tj = 175 ºC

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Input Rectifier Bridge

Figure 1 Rectifier diode Figure 2 Rectifier diode

Typical diode forward current as Diode transient thermal impedance
a function of forward voltage as a function of pulse width
IF= f(VF) ZthJH = f(tp)
125 10
1

ZthJC (K/W)
IF (A)

100

100
75

50
D = 0,5
10
-1 0,2
0,1
25 0,05
Tj = Tjmax-25°C 0,02
0,01
Tj = 25°C
0,005
0 0.000
-2
0,0 0,5 1,0 1,5 2,0 10
V F (V) t p (s)
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10 1

At At
tp = 250 μs D= tp / T
RthJH = 2,126 K/W

Figure 3 Rectifier diode Figure 4 Rectifier diode

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IF = f(Th)
80 50
IF (A)
Ptot (W)

40
60

30

40

20

20
10

0 0
0 50 100 150 200 0 50 100 150 200
T h ( o C) T h ( o C)

At At
Tj = 150 ºC Tj = 150 ºC

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Thermistor

Figure 1 Thermistor Figure 2 Thermistor

Typical NTC characteristic Typical NTC resistance values
as a function of temperature
RT = f(T)
  
NTC-typical temperature characteristic  B25/100⋅ 1 − 1  
  T T 
[Ω]
24000
 25  
R(T ) = R25 ⋅ e 
R/Ω

20000

16000

12000

8000

4000

0
25 50 75 100 125
T (°C)

copyright Vincotech 18 Revision: 2

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Switching Definitions Output Inverter

General conditions
Tj = 125 °C
Rgon = 64 Ω
Rgoff = 64 Ω

Figure 1 Output inverter IGBT Figure 2 Output inverter IGBT

Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff) (tEon = integrating time for Eon)
125 250
% tdoff %
IC
100 200
VGE 90%
VCE 90%

75 150
VGE IC
VCE
50 100
tEoff VGE
tdon
25 50
IC 1%
VCE VCE 3%
VGE 10% IC 10%
0 0 tEon

-25 -50
-0,2 0 0,2 0,4 0,6 2,8 3 3,2 3,4 3,6
time (us) time(us)

VGE (0%) = -15 V VGE (0%) = -15 V

VGE (100%) = 15 V VGE (100%) = 15 V
VC (100%) = 600 V VC (100%) = 600 V
IC (100%) = 10 A IC (100%) = 10 A
tdoff = 0,29 μs tdon = 0,13 μs
tEoff = 0,56 μs tEon = 0,43 μs

Figure 3 Output inverter IGBT Figure 4 Output inverter IGBT

Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr
125 250
% fitted %
IC
100 200
IC 90%

75 150

IC 60% VCE
50 100
IC 40% IC 90%
tr
25 50

VCE IC 10%
Ic IC 10%
0 0
tf

-25 -50
0 0,1 0,2 0,3 0,4 0,5 0,6 2,8 2,9 3 3,1 3,2 3,3
time (us) time(us)

VC (100%) = 600 V VC (100%) = 600 V

IC (100%) = 10 A IC (100%) = 10 A
tf = 0,16 μs tr = 0,02 μs

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Switching Definitions Output Inverter

Figure 5 Output inverter IGBT Figure 6 Output inverter IGBT

Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon
125 250
% %
IC 1%
Pon
Poff Eoff
100 200

75 150

Eon
50 100

25 50

VGE 90% VCE 3%

VGE 10%
0 0
tEoff tEon

-25 -50
-0,2 0 0,2 0,4 0,6 0,8 2,8 2,9 3 3,1 3,2 3,3 3,4
time (us) time(us)

Poff (100%) = 5,97 kW Pon (100%) = 5,97 kW

Eoff (100%) = 1,01 mJ Eon (100%) = 1,13 mJ
tEoff = 0,56 μs tEon = 0,43 μs

Figure 7 Output inverter FWD Figure 8 Output inverter IGBT

Gate voltage vs Gate charge (measured) Turn-off Switching Waveforms & definition of trr
20 150
VGE (V)

15 Id
100

10 trr
50

5
Vd fitted
0

0 IRRM 10%

-50
-5

-100
-10 IRRM 90%

IRRM 100%

-15 -150
-20 0 20 40 60 80 100 2,8 3 3,2 3,4 3,6 3,8
Qg (nC) time(us)

VGEoff = -15 V Vd (100%) = 600 V

VGEon = 15 V Id (100%) = 10 A
VC (100%) = 600 V IRRM (100%) = 12 A
IC (100%) = 10 A trr = 0,50 μs
Qg = 89,25 nC

copyright Vincotech 20 Revision: 2

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Switching Definitions Output Inverter

Figure 9 Output inverter FWD Figure 10 Output inverter FWD

Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec
(tQrr = integrating time for Qrr) (tErec= integrating time for Erec)
150 125
% %
Id Erec
100 100

tQrr
tErec
50 75

Qrr
0 50

-50 25

Prec
-100 0

-150 -25
2,8 3,1 3,4 3,7 4,0 4,3 2,8 3,1 3,4 3,7 4 4,3
time(us) time(us)

Id (100%) = 10 A Prec (100%) = 5,97 kW

Qrr (100%) = 2,30 μC Erec (100%) = 0,93 mJ
tQrr = 1,04 μs tErec = 1,04 μs

copyright Vincotech 21 Revision: 2

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Ordering Code and Marking - Outline - Pinout

Ordering Code & Marking

Version Ordering Code in DataMatrix as in packaging barcode as
without thermal paste 12mm housing V23990-P549-A-PM P549-A P549-A

Outline

Pinout

copyright Vincotech 22 Revision: 2

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PRODUCT STATUS DEFINITIONS

Datasheet Status Product Status Definition

This datasheet contains the design specifications for

product development. Specifications may change in any
Target Formative or In Design
manner without notice. The data contained is exclusively
intended for technically trained staff.

This datasheet contains preliminary data, and

supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
Preliminary First Production
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.

This datasheet contains final specifications. Vincotech

reserves the right to make changes at any time without
Final Full Production
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.

DISCLAIMER

The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.

As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.

copyright Vincotech 23 Revision: 2