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EC201 End Sem

1. The document appears to be an end semester examination for a Solid State Electronics Devices course. It contains 6 questions testing students' understanding of topics like tunnel diodes, solar cells, PIN diodes, bipolar junction transistors, field effect transistors, and small signal models. 2. Question 1 involves explaining the operation and I-V characteristics of a tunnel diode, calculating voltages and currents in a Zener diode circuit, and deriving an expression for the open circuit voltage of a solar cell. 3. Questions 2-5 cover the characteristics and applications of PIN diodes, base width modulation effects, transistor doping calculations, transistor biasing, differences between JFETs and BJTs,

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Ayush Bhatt
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11 views2 pages

EC201 End Sem

1. The document appears to be an end semester examination for a Solid State Electronics Devices course. It contains 6 questions testing students' understanding of topics like tunnel diodes, solar cells, PIN diodes, bipolar junction transistors, field effect transistors, and small signal models. 2. Question 1 involves explaining the operation and I-V characteristics of a tunnel diode, calculating voltages and currents in a Zener diode circuit, and deriving an expression for the open circuit voltage of a solar cell. 3. Questions 2-5 cover the characteristics and applications of PIN diodes, base width modulation effects, transistor doping calculations, transistor biasing, differences between JFETs and BJTs,

Uploaded by

Ayush Bhatt
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Department of Eleeti‘onics Engineei ing, II"f (BHU) EC 20.

1 Solid State Electi omc


Dcv l ceS

19 Novei nber, 2022

End SeNiestei Fxainina tion

Full Mai hs: 60 rhu


me: 3 hou rs

AtieIiipf n1l qUcsfioils.

1. (a) Explain how tuiuiel diode diffci from a coliventional p-n junction diode. With the help
of the energy band diagiain explain the prinGiple of operation in forward and reverse bias
condit ÎOllS. Sketcli its I-V’ c1iai acteiistics charly showing the negative resistance region.
What are the facts whicli affect the peak and valley points on the I-V charctefistics? (6)
(b) In the cii’cuit sliown below, Rs = 2 kD, Rr = 5 kD and input voltage is 60 V while the
output oltage is 35 V. Detenuine (i) voltage diop across series resistance, (i i ) load
current, (iii) current t1u‘oug1i the sei’ies i’esistance and (iv) Zener diode current. {4 j

(c) Explain the I-V characteristics of a solai cell. Showing the equivalent circuit deris e an
expression for the open circuit voltage (Doc)- What is the maximum power that can be derry ed
from the cell? (5)

2. (a) What is PIN diode? Explain how it is suitable for‘ microwave applications. (3)
(b) Explain base wldtli modulation in bipolar junction transistor. icat are its
consequences on common base characteristics? (3)
(c) Detennin e the base doping which will intake the bieakdown and punch throu•qh
voltages of a tiansistor the same. The basevviclth is w 0 = 3.8 X 10“ cm and Ge pnp alloyed
2 l9
tr ansistoi slioulcl be consider d. (e0 = 8.85 x 10”' F/in, q = 1.6 l 0” C. eG = 16) (4)

3. (a) What are the basic coliC1i (ions wliicli can be fulfillecl lor operating bipolai‘
junction transistor (coininon moale conflgUl’atiO1i) i14 OGiÎve egion? I Io v the opeiating point
Q is selected? Explain the l'GilStins fol’ Slli ft in Opcraiing Point. (4)
(b) Draw a vOltagG di itlGl‘ biils Gll’cui1 1Oi’ imi l1}3ll iliColl t ansistor havÎllg = 100. The
desired operating point Q is cr' 3 ‹}11(l 1 — 1 >›\ w Î tli S lcss tlian equal to S. Assume
Vcc 10V and pg tlic circuit rliagiain ›mi/h all bloc con poi en val°es. ( )
D e pEtrtme ç1t Cif E} e t tt C = G S nn gill c'c*i‘illg, 1 l’I“ (DI HU) ü C 20 l : Solicl State Electronic Devices

4. Deterinine the ă 'O (il@kâ ‹Jt ‹1) ) lltJ€)CS ‹}l )t FIUΔkÎll Î l)“fl l I@)1 ‹I) Î)1(j )JfHÎiChcs for the cifCtlit
g V en belo v. C3 iven {1 — 1(lfl li i ‹›l 1 ihC o ‹lnsisttil’.s. ’l’lic circuil r›f’ 1 ig. (b) is connected to
g- (*) *' *‹ ' °l ** *‹ I' lift 1›iisc ol‘ ()i is connectcd to the collector of Q2. Find
tlle 1lU‘lv valtles Cif Vb'3, .3, allt} lp. . (1 )

2 lt£l
s To
1 HO OOH tC 1 OP
l‹D
i‹n
OÏ’ QJ in
Q2
rig.
(«j 470
£2

50 l‹f2 2.7 ltd

Fig. (b)

5. (a) What are the differences between the JFET and Bipolar Junction Transistor? Discuss
the drain characteristics of the n-channel JFET in details. (6)
(b) A n-channel JFET exhibits the drain saturation current of 20 mA with pinch-off
voltage at 8 V. Determine the drain current and the transconductance at Vpt = —1 V. (3)

6. Draw an equivalent small Signal model for a transistor with common collector
configuration. Determine the current gain, input resislance, voltage •gain and output
resistance of the configuration considering the dominant li-parameters only. (6)

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