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    2SC2240

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    spikebit
    The 2SC2240 transistor is designed for low noise audio amplifier applications requiring low frequency and low noise performance. It has a typical noise figure of 4dB or 0.5dB depending on the resistance and intended use. It also has low pulse noise, high DC current gain of 200-700, and a high breakdown voltage of 120V. The datasheet provides maximum ratings, electrical characteristics, and restrictions on product use for the 2SC2240 transistor.

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    2SC2240

    Uploaded by

    spikebit
    25 views6 pages
    The 2SC2240 transistor is designed for low noise audio amplifier applications requiring low frequency and low noise performance. It has a typical noise figure of 4dB or 0.5dB depending on the resistance and intended use. It also has low pulse noise, high DC current gain of 200-700, and a high breakdown voltage of 120V. The datasheet provides maximum ratings, electrical characteristics, and restrictions on product use for the 2SC2240 transistor.

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    The 2SC2240 transistor is designed for low noise audio amplifier applications requiring low frequency and low noise performance. It has a typical noise figure of 4dB or 0.5dB depending on the resistance and intended use. It also has low pulse noise, high DC current gain of 200-700, and a high breakdown voltage of 120V. The datasheet provides maximum ratings, electrical characteristics, and restrictions on product use for the 2SC2240 transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    25 views6 pages

    2SC2240

    Uploaded by

    spikebit
    The 2SC2240 transistor is designed for low noise audio amplifier applications requiring low frequency and low noise performance. It has a typical noise figure of 4dB or 0.5dB depending on the resistance and intended use. It also has low pulse noise, high DC current gain of 200-700, and a high breakdown voltage of 120V. The datasheet provides maximum ratings, electrical characteristics, and restrictions on product use for the 2SC2240 transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    2SC2240

    TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

    2SC2240
    Low Noise Audio Amplifier Applications
    Unit: mm

    The 2SC2240 is a transistor for low frequency and low noise


    applications. This device is designed to lower noise figure in the region of
    low signal source impedance, and to lower the pulse noise. This is
    recommended for the first stages of Equalizer amplifiers.

    · Low noise : NF = 4dB (typ.) RG = 100 Ω, VCE = 6 V, IC = 100 µA,


    f = 1 kHz
    : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = 6 V, IC = 100 µA,
    f = 1 kHz
    · Low pulse noise: Low 1/f noise
    · High DC current gain: hFE = 200~700
    · High breakdown voltage: VCEO = 120 V

    Maximum Ratings (Ta = 25°C)

    Characteristics Symbol Rating Unit

    Collector-base voltage VCBO 120 V JEDEC TO-92


    Collector-emitter voltage VCEO 120 V JEITA SC-43
    Emitter-base voltage VEBO 5 V TOSHIBA 2-5F1B
    Collector current IC 100 mA
    Weight: 0.21 g (typ.)
    Base current IB 20 mA
    Collector power dissipation PC 300 mW
    Junction temperature Tj 125 °C
    Storage temperature range Tstg -55~125 °C

    1 2003-03-25
    2SC2240
    Electrical Characteristics (Ta = 25°C)

    Characteristics Symbol Test Condition Min Typ. Max Unit

    Collector cut-off current ICBO VCB = 120 V, IE = 0 ¾ ¾ 0.1 mA


    Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA
    Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 120 ¾ ¾ V
    hFE
    DC current gain VCE = 6 V, IC = 2 mA 200 ¾ 700
    (Note)
    Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ¾ ¾ 0.3 V
    Base-emitter voltage VBE VCE = 6 V, IC = 2 mA ¾ 0.65 ¾ V
    Transition frequency fT VCE = 6 V, IC = 1 mA ¾ 100 ¾ MHz
    Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 3.0 ¾ pF
    VCE = 6 V, IC = 0.1 mA, f = 10 Hz,
    ¾ ¾ 6
    RG = 10 kW
    VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
    Noise figure NF ¾ ¾ 2 dB
    RG = 10 kW
    VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
    ¾ 4 ¾
    RG = 100 W

    Note: hFE classification GR: 200~400, BL: 350~700

    2 2003-03-25
    2SC2240

    3 2003-03-25
    2SC2240

    4 2003-03-25
    2SC2240

    RESTRICTIONS ON PRODUCT USE 000707EAA

    · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
    devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
    stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
    safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
    such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
    In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
    set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
    conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
    Handbook” etc..

    · The TOSHIBA products listed in this document are intended for usage in general electronics applications
    (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
    etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
    extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
    bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
    spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
    medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
    document shall be made at the customer’s own risk.

    · The information contained herein is presented only as a guide for the applications of our products. No
    responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
    rights of the third parties which may result from its use. No license is granted by implication or otherwise under
    any intellectual property or other rights of TOSHIBA CORPORATION or others.

    · The information contained herein is subject to change without notice.

    5 2003-03-25
    This datasheet has been download from:

    www.datasheetcatalog.com

    Datasheets for electronics components.

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