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2SD711 Inchange

This document provides information on the ISC Silicon NPN Darlington Power Transistor 2SD711. It lists the transistor's key features as having a high DC current gain, low collector saturation voltage, excellent safe operating area, and high reliability. It also provides the transistor's maximum ratings, thermal characteristics, electrical characteristics, and switching times. The document concludes with legal notices regarding the usage of the transistor.

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65 views2 pages

2SD711 Inchange

This document provides information on the ISC Silicon NPN Darlington Power Transistor 2SD711. It lists the transistor's key features as having a high DC current gain, low collector saturation voltage, excellent safe operating area, and high reliability. It also provides the transistor's maximum ratings, thermal characteristics, electrical characteristics, and switching times. The document concludes with legal notices regarding the usage of the transistor.

Uploaded by

Jose
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor 2SD711

DESCRIPTION
·High DC Current Gain
·Low Collector Saturation Voltage
·Excellent Safe Operating Area
·High Reliability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Motor controls
·Inverters，choppers
·Switching regulators
·General purpose power amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 500 V

VCEO Collector-Emitter Voltage 500 V

VCEO(SUS) Collector-Emitter Voltage 450 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current 15 A

IB Base Current 1 A
Collector Power Dissipation
PC 100 W
@TC=25℃
Tj Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor 2SD711

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 500 V

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 6 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 0.3A 1.5 V

VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 0.3A 2.5 V

ICBO Collector Cutoff Current VCB=500V; IE=0 1 mA

IEBO Emitter Cutoff Current VEB= 6V; IC= 0 50 mA

hFE DC Current Gain IC= 10A; VCE= 1.5V 100

Switching times

ton Turn-on Time 2.0 μs

tstg Storage Time IC= 15A ,IB1= IB2= 0.3A 15 μs

tf Fall Time 5.0 μs

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any
particular purpose, nor does ISC assume any liability arising from the application or use of
any products, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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