2SB1184 / 2SB1243

Transistors

Power Transistor (−60V, −3A)

2SB1184 / 2SB1243

!Features !External dimensions (Units : mm)

1) Low VCE(sat).
2SB1184 2SB1243
VCE(sat) = -0.5V (Typ.) 2.5±0.2
2.3 +0.2 6.8±0.2
(IC/IB = -2A / -0.2A) 6.5±0.2 −0.1

1.5±0.3
C0.5
5.1 +0.2
−0.1 0.5±0.1
2) Complements the 2SD1760 / 2SD1864.

4.4±0.2
0.9
5.5 +0.3
−0.1

9.5±0.5
0.9

1.5

1.0
2.5
0.65±0.1 0.65Max.
0.75

14.5±0.5
0.9
0.55±0.1 0.5±0.1
!Structure 2.3±0.2 2.3±0.2 1.0±0.2
(1) (2)
Epitaxial planar type
(3)

2.54 2.54
PNP silicon transistor (1) (2) (3) 1.05 0.45±0.1

(1) Base (1) Emitter

ROHM : CPT3 (2) Collector ROHM : ATV (2) Collector
EIAJ : SC-63 (3) Emitter (3) Base

!Absolute maximum ratings (Ta = 25°C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO −60 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
IC −3 A (DC)
Collector current
ICP −4.5 A (Pulse) *1
1 W
Collector power 2SB1184
dissipation PC 15 W (Tc = 25˚C)
2SB1243 1 W *2
Junction temperature Tj 150 °C
Storage temperature Tstg −55~+150 °C
*1 Single pulse, Pw = 100ms
*2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
 2SB1184 / 2SB1243
Transistors

!Electrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −60 - - V IC = −50µA
Collector-emitter breakdown voltage BVCEO −50 - - V IC = −1mA
Emitter-base breakdown voltage BVEBO −5 - - V IE = −50µA
Collector cutoff current ICBO - - −1 µA VCB = −40V
Emitter cutoff current IEBO - - −1 µA VEB = −4V
Collector-emitter saturation voltage VCE(sat) - - −1 V IC/IB = −2A/−0.2A *
Base-emitter saturation voltage VBE(sat) - - −1.5 V IC/IB = −2A/−0.2A *
DC current transfer ratio hFE 82 - 390 - VCE = −3V, IC = −0.5A *
Transition frequency fT - 70 - MHz VCE = −5V, IE = 0.5A, f = 30MHz
Output capacitance Cob - 50 - pF VCB = −10V, IE = 0A, f = 1MHz
* Measured using pulse current.

!Packaging specifications and hFE

Package Taping
Code TL TV2
Type hFE Basic ordering unit (pieces) 2500 2500
2SB1184 PQR -
2SB1243 PQR -

hFE values are classified as follows :

Item P Q R
hFE 82~180 120~270 180~390

!Electrical characteristic curves

-10 -3.0 -3.0

-50mA Tc = 25°C Tc = 25°C
VCE = -3V -45mA -50mA
-5 -40mA -45mA
COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

-35mA
COLLECTOR CURRENT : IC (A)

-2.5 -2.5 -40mA

-30mA -20mA
-25mA
-35mA
-2 -30mA
-2.0 -2.0 -25mA
-1 -20mA
-15mA
Ta = 100°C -15mA
-0.5 25°C
-25°C -1.5 -1.5
-10mA -10mA
-0.2

-0.1 -1.0 -1.0

-5mA
-0.05 IB = -5mA
-0.5 -0.5
PC = 15W
-0.02
IB = 0mA 0 IB = 0mA
-0.01 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 0 -1 -2 -3 -4 -5 0 -10 -20 -30 -40 -50

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter Fig.2 Grounded emitter output Fig.3 Grounded emitter output
propagation characteristics characteristics ( Ι ) characteristics ( ΙΙ )
 2SB1184 / 2SB1243
Transistors

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

1000 1k -10
Ta = 25°C VCE = -3V Ta = 25°C
500 500 -5
Ta = 100°C
25°C
DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

200 200 -25°C -2
VCE = -5V
100 100 -1

50 50 -0.5
-3V
20 20 -0.2

10 10 -0.1 IC/IB = 50/1

5 5 -0.05 20/1

2 2 -0.02 10/1
1 1 -0.01
-0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter saturation
collector current ( Ι ) collector current ( ΙΙ ) voltage vs.collector current

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

-10 1000 1000
lC/lB = 10 Ta = 25°C Ta = 25°C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
: VBE(sat) (V)

TRANSITION FREQUENCY : fT (MHz)

-5 500 VCE = -5V 500 f = 1MHz

Ta = -25°C IE = 0A
-2 25°C 200 200
VBE(sat)
100°C
-1 100 100
BASE SATURATION VOLTAGE

-0.5 50 50

-0.2 20 20
Ta = 100°C
-0.1 25°C 10 10
-25°C
-0.05 VCE(sat) 5 5

-0.02 2 2

-0.01 1 1
-0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 1 2 5 10 20 50 100 200 500 1000 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.7 Collector-emitter saturation voltage Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance vs.
vs. collector current emitter current collector base voltage
Base-emitter saturation voltage vs.
collector current

-10.0 -10.0
IC Max. (Pulse)* Tc=25°C
-5.0 -5.0 Single
*
COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

nonrepetitive
-2.0 pulse
-2.0
10
0m

Pw
PW

-1.0 -1.0
=1
s

=10
*

0m
10

-0.5 -0.5
s*
ms

0m

D
DC

s*

C
*

-0.2 -0.2

-0.1 -0.1
-0.05 -0.05
Tc=25°C
-0.02 *Single
nonrepetitive -0.02
pulse
-0.01 -0.01
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.10 Safe operation area Fig.11 Safe operation area

(2SB1184) (2SB1243)