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SSM2019

The SSM2019 is a latest generation audio preamplifier. It combines SSM preamp design expertise with advanced processing. Applications include microphone preamplifiers and bus summing amplifiers in professional and consumer audio equipment, sonar, and other applications requiring a low noise instrumentation amplifier with high gain capability.

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0% found this document useful (0 votes)
312 views8 pages

SSM2019

The SSM2019 is a latest generation audio preamplifier. It combines SSM preamp design expertise with advanced processing. Applications include microphone preamplifiers and bus summing amplifiers in professional and consumer audio equipment, sonar, and other applications requiring a low noise instrumentation amplifier with high gain capability.

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Copyright
© Attribution Non-Commercial (BY-NC)
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a

FEATURES Excellent Noise Performance: 1.0 nV/Hz or 1.5 dB Noise Figure Ultra-low THD: < 0.01% @ G = 100 Over the Full Audio Band Wide Bandwidth: 1 MHz @ G = 100 High Slew Rate: 16 V/ s @ G = 10 10 V rms Full-Scale Input, G = 1, VS = 18 V Unity Gain Stable True Differential Inputs Subaudio 1/f Noise Corner 8-Lead PDIP or 16-Lead SOIC Only One External Component Required Very Low Cost Extended Temperature Range: 40 C to +85 C APPLICATIONS Audio Mix Consoles Intercom/Paging Systems 2-Way Radio Sonar Digital Audio Systems

Self-Contained Audio Preamplifier SSM2019


FUNCTIONAL BLOCK DIAGRAM
V+

V +IN IN RG1 RG2 5k 5k 5k REFERENCE V 5k 1 5k 5k 1

OUT

PIN CONNECTIONS 8-Lead PDIP (N Suffix) 8-Lead Narrow Body SOIC (RN Suffix)*

GENERAL DESCRIPTION

The SSM2019 is a latest generation audio preamplifier, combining SSM preamplifier design expertise with advanced processing. The result is excellent audio performance from a monolithic device, requiring only one external gain set resistor or potentiometer. The SSM2019 is further enhanced by its unity gain stability. Key specifications include ultra-low noise (1.5 dB noise figure) and THD (<0.01% at G = 100), complemented by wide bandwidth and high slew rate. Applications for this low cost device include microphone preamplifiers and bus summing amplifiers in professional and consumer audio equipment, sonar, and other applications requiring a low noise instrumentation amplifier with high gain capability.

RG1 1 IN 2

RG2

V+ TOP VIEW +IN 3 (Not to Scale) 6 OUT


7

SSM2019

V 4

REFERENCE

16-Lead Wide Body SOIC (RW Suffix)


NC 1 RG1 2 NC 3 IN 4
16 NC 15 RG2 14 NC

13 V+ TOP VIEW +IN 5 (Not to Scale) 12 NC

SSM2019

NC 6 V 7 NC 8

11 OUT 10 REFERENCE 9

NC

NC = NO CONNECT

*Consult factory for availability.

REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 2003 Analog Devices, Inc. All rights reserved.

40 SSM2019SPECIFICATIONS (V = at15 V=and C.) C T +85 C, unless otherwise noted. Typical specifications apply T 25
S A A

Parameter DISTORTION PERFORMANCE Total Harmonic Distortion Plus Noise

Symbol

Conditions VO = 7 V rms RL = 2 kW f = 1 kHz, G = 1000 f = 1 kHz, G = 100 f = 1 kHz, G = 10 f = 1 kHz, G = 1 BW = 80 kHz f = 1 kHz, G = 1000 f = 1 kHz, G = 100 f = 1 kHz, G = 10 f = 1 kHz, G = 1 f = 1 kHz, G = 1000 G = 10 RL = 2 kW CL = 100 pF G = 1000 G = 100 G = 10 G=1

Min

Typ

Max

Unit

THD + N

0.017 0.0085 0.0035 0.005

% % % %

NOISE PERFORMANCE Input Referred Voltage Noise Density

en

Input Current Noise Density DYNAMIC RESPONSE Slew Rate Small Signal Bandwidth

in SR BW3 dB

1.0 1.7 7 50 2 16 200 1000 1600 2000 0.05 0.25 3 10 0.001 1.0 110 90 70 50 110 110 90 70 12 130 113 94 74 124 118 101 82 1 30 5.3 7.1 13.9 4 30 5000 50 Continuous

nV/Hz nV/Hz nV/Hz nV/Hz pA/Hz V/ms kHz kHz kHz kHz mV mA mA dB dB dB dB dB dB dB dB V MW MW MW MW V mV pF mA sec

INPUT Input Offset Voltage Input Bias Current Input Offset Current Common-Mode Rejection

VIOS IB Ios CMR

Power Supply Rejection

PSR

VCM = 0 V VCM = 0 V VCM = 12 V G = 1000 G = 100 G = 10 G=1 VS = 5 V to 18 V G = 1000 G = 100 G = 10 G=1 Differential, G = 1000 G=1 Common Mode, G = 1000 G=1 RL = 2 kW, TA = 25C Output-to-Ground Short

Input Voltage Range Input Resistance

IVR RIN

OUTPUT Output Voltage Swing Output Offset Voltage Maximum Capacitive Load Drive Short Circuit Current Limit Output Short Circuit Duration GAIN Gain Accuracy

VO VOOS ISC

13.5

RG =

10 kW G1

TA = 25C RG = 10 W, G = 1000 RG = 101 W, G = 100 RG = 1.1 kW, G = 10 RG = , G = 1

0.5 0.5 0.5 0.1

Maximum Gain REFERENCE INPUT Input Resistance Voltage Range Gain to Output POWER SUPPLY Supply Voltage Range Supply Current
Specifications subject to change without notice.

0.1 0.2 0.2 0.2 70 10 12 1

dB dB dB dB dB kW V V/V 18 7.5 8.5 V mA mA

VS ISY

VCM = 0 V, RL = VCM = 0 V, VS = 18 V, RL =

4.6 4.7

REV. 0

SSM2019
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . 10 sec Storage Temperature Range . . . . . . . . . . . . 65C to +150C Junction Temperature (TJ) . . . . . . . . . . . . . 65C to +150C Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300C Operating Temperature Range . . . . . . . . . . . 40C to +85C Thermal Resistance2 8-Lead PDIP (N) . . . . . . . . . . . . . . . . . . . . . . . JA = 96C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JC = 37C/W 16-Lead SOIC (RW) . . . . . . . . . . . . . . . . . . . . JA = 92C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JC = 27C/W
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2

ABSOLUTE MAXIMUM RATINGS 1

ORDERING GUIDE
Model SSM2019BN SSM2019BRW SSM2019BRWRL SSM2019BRN* SSM2019BRNRL* Temperature Range 40C to +85C 40C to +85C 40C to +85C 40C to +85C 40C to +85C Package Description 8-Lead PDIP 16-Lead SOIC 16-Lead SOIC, Reel 8-Lead SOIC 8-Lead SOIC, Reel Package Option N-8 RW-16 RW-16 RN-8 RN-8

*Consult factory for availability.

qJA is specified for worst-case mounting conditions, i.e., qJA is specified for device in socket for PDIP; qJA is specified for device soldered to printed circuit board for SOIC package.

CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the SSM2019 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!
ESD SENSITIVE DEVICE

Typical Performance Characteristics


0.1

100

G = 1000 0.01 G = 100 G=1 G = 10

RTI, VOLTAGE NOISE DENSITY nV/ Hz

TA = 25 C VS = 15V G = 1000

10

THD + N %

0.001 15V VS 7Vrms VO RL 600 BW = 80kHz 0.0001 10 20 18V 10Vrms

0.1
1k FREQUENCY Hz 10k 20k

100

10

100 FREQUENCY Hz

1k

10k

TPC 1. Typical THD + Noise vs. Gain

TPC 2. Voltage Noise Density vs. Frequency

REV. 0

SSM2019
100
RTI VOLTAGE NOISE DENSITY nV/ Hz

TA = 25 C VS = 15V

100 90
PEAK-TO-PEAK VOLTAGE V

30 GAIN 25 10

80
10
IMPEDANCE

GAIN = 1

70 60 50 40 30 20 10

f = 1kHz OR 10kHz

20

TA = 25 C RL = 2k VS = 15V

15

0.1

10 GAIN

100

1k

0 100

1k

10k 100k FREQUENCY Hz

1M

10 100

1k

10k 100k FREQUENCY Hz

1M

TPC 3. RTI Voltage Noise Density vs. Gain

TPC 4. Output Impedance vs. Frequency

TPC 5. Maximum Output Swing vs. Frequency

16

OUTPUT VOLTAGE V

12 10 8 6 4 2 0 10

G=1

OUTPUT SWING (VOUT+ VOUT) V

TA = 25 C 14 VS = 15V

40
G 10

20

TA = 25 C f = 100kHz

TA = 25 C

INPUT SWING (VIN+ VIN) V

30

15

20

10

10

1k 10k 100 LOAD RESISTANCE

100k

0 0 10 20 30 40 SUPPLY VOLTAGE (V+ V) V

0 0 10 30 20 SUPPLY VOLTAGE (V+ V) V 40

TPC 6. Output Voltage vs. Load Resistance

TPC 7. Input Voltage Range vs. Supply Voltage

TPC 8. Output Voltage Range vs. Supply Voltage

200

VCM = 100mV 180 VS = 15V TA = 25 C 160 140 G = 1000 G = 100 G = 10 G=1

150 G = 1000 125 G = 10 100


+PSRR dB

150 G = 1000 125


G = 100

G = 10 100
PSRR dB

G = 100

CMRR dB

G=1

120 100 80 60 40 20 0 10

75 G=1 50 VCM = 100mV TA = 25 C VS = 15V 100 1k 10k FREQUENCY Hz 100k

75

50 VS = 100mV TA = 25 C VS = 15V 100 1k 10k FREQUENCY Hz 100k

25

25

100

1k

10k

100k

0 10

0 10

FREQUENCY Hz

TPC 9. CMRR vs. Frequency

TPC 10. Positive PSRR vs. Frequency

TPC 11. Negative PSRR vs. Frequency

REV. 0

SSM2019
0.040 V+/V = 0.035 0.030 15V

0.02 TA = 25 C 0.01 0

0 V+/V = 1 2 15V

0.020 0.015 0.010 0.005 0 50

VOOS mV
0 5 10 15 20 25 30 35 SUPPLY VOLTAGE (VCC VEE) V 40

VIOS mV

VIOS mV

0.025

0.01 0.02 0.03 0.04 0.05

3 4 5 6 7 8 50

25

0 25 50 TEMPERATURE C

75

100

0.06

25

25 0 50 TEMPERATURE C

75

100

TPC 12. VIOS vs. Temperature

TPC 13. VIOS vs. Supply Voltage

TPC 14. VOOS vs. Temperature

30 TA = 25 C 20

5 V+/V = 4 15V

6 TA = 25 C 5

10
VOOS mV

IB A

IB+ OR IB 2

IB A

10
1

20
0 50

30 0 5 10 15 20 25 30 35 SUPPLY VOLTAGE (VCC VEE) V 40

0
25 0 25 50 TEMPERATURE C 75 100

10 20 30 SUPPLY VOLTAGE (VCC VEE) V

40

TPC 15. VOOS vs. Supply Voltage

TPC 16. IB vs. Temperature

TPC 17. IB vs. Supply Voltage

8 6 I+ @ V+/V =
SUPPLY CURRENT mA

8 TA = 25 C 6 18V SUPPLY CURRENT mA 4 2 0 2 4 6 8 25 0 25 50 TEMPERATURE C 75 100 I 15V I+


SUPPLY CURRENT mA

16 TA = 25 C 14 12 10 8 6 4 2

4 I+ @ V+/V = 2 0 2 4 6 8 50 I @ V+/V = I @ V+/V = 18V 15V

10

15

20

25

30

35

40

0 0 10 15 5 SUPPLY VOLTAGE V 20

SUPPLY VOLTAGE (VCC VEE) V

TPC 18. Supply Current vs. Temperature

TPC 19. Supply Current vs. Supply Voltage

TPC 20. ISY vs. Supply Voltage

REV. 0

SSM2019
V+
VS = 15V TA = 25 C

+IN RG

SSM2019
RG2

OUT REFERENCE

IN

VOLTAGE GAIN dB

RG1

60 40 20 0

G=

VOUT (+IN) ( IN)

10k RG

+1

Figure 1. Basic Circuit Connections


GAIN

The SSM2019 only requires a single external resistor to set the voltage gain. The voltage gain, G, is:
G= 10 kW +1 RG
10 kW G 1

1k

10k

100k

1M

10M

Figure 2. Bandwidth for Various Values of Gain


NOISE PERFORMANCE

and the external gain resistor, RG , is:


RG =

For convenience, Table I lists various values of RG for common gain levels.
Table I. Values of RG for Various Gain Levels

RG ( ) AV NC 4.7 k 1.1 k 330 100 32 10 1 3.2 10 31.3 100 314 1000

dB 0 10 20 30 40 50 60

The SSM2019 is a very low noise audio preamplifier exhibiting a typical voltage noise density of only 1 nV/Hz at 1 kHz. The exceptionally low noise characteristics of the SSM2019 are in part achieved by operating the input transistors at high collector currents since the voltage noise is inversely proportional to the square root of the collector current. Current noise, however, is directly proportional to the square root of the collector current. As a result, the outstanding voltage noise performance of the SSM2019 is obtained at the expense of current noise performance. At low preamplifier gains, the effect of the SSM2019 voltage and current noise is insignificant. The total noise of an audio preamplifier channel can be calculated by:
E n = e n 2 + ( i n RS )2 + e t 2

where: En = total input referred noise en = amplifier voltage noise in = amplifier current noise RS = source resistance et = source resistance thermal noise For a microphone preamplifier, using a typical microphone impedance of 150 W, the total input referred noise is:
E n = (1 nV Hz )2 + 2( pA / Hz 150 W)2 + (1.6 nV / Hz )2 = 1.93 nV / Hz @ 1 kHz

The voltage gain can range from 1 to 3500. A gain set resistor is not required for unity gain applications. Metal film or wire-wound resistors are recommended for best results. The total gain accuracy of the SSM2019 is determined by the tolerance of the external gain set resistor, RG, combined with the gain equation accuracy of the SSM2019. Total gain drift combines the mismatch of the external gain set resistor drift with that of the internal resistors (20 ppm/C typ). Bandwidth of the SSM2019 is relatively independent of gain, as shown in Figure 2. For a voltage gain of 1000, the SSM2019 has a small-signal bandwidth of 200 kHz. At unity gain, the bandwidth of the SSM2019 exceeds 4 MHz.

where: en = 1 nV/Hz @ 1 kHz, SSM2019 en in = 2 pA/Hz @ 1 kHz, SSM2019 in RS = 150 W, microphone source impedance et = 1.6 nV/Hz @ 1 kHz, microphone thermal noise This total noise is extremely low and makes the SSM2019 virtually transparent to the user.

REV. 0

SSM2019
INPUTS

The SSM2019 has protection diodes across the base emitter junctions of the input transistors. These prevent accidental avalanche breakdown, which could seriously degrade noise performance. Additional clamp diodes are also provided to prevent the inputs from being forced too far beyond the supplies.
(INVERTING)

TRANSDUCER (NONINVERTING)

SSM2019

Although the SSM2019 inputs are fully floating, care must be exercised to ensure that both inputs have a dc bias connection capable of maintaining them within the input common-mode range. The usual method of achieving this is to ground one side of the transducer as in Figure 3a. An alternative way is to float the transducer and use two resistors to set the bias point as in Figure 3b. The value of these resistors can be up to 10 kW, but they should be kept as small as possible to limit common-mode pickup. Noise contribution by resistors is negligible since it is attenuated by the transducers impedance. Balanced transducers give the best noise immunity and interface directly as in Figure 3c. For stability, it is required to put an RF bypass capacitor directly across the inputs, as shown in Figures 3 and 4. This capacitor should be placed as close as possible to the input terminals. Good RF practice should also be followed in layout and power supply bypassing, since the SSM2019 uses very high bandwidth devices.
REFERENCE TERMINAL

a. Single-Ended
R

TRANSDUCER

SSM2019

b. Pseudo-Differential

The output signal is specified with respect to the reference terminal, which is normally connected to analog ground. The reference may also be used for offset correction or level shifting. A reference source resistance will reduce the common-mode rejection by the ratio of 5 kW/RREF. If the reference source resistance is 1 W, then the CMR will be reduced to 74 dB (5 kW/1 W = 74 dB).
COMMON-MODE REJECTION

TRANSDUCER

SSM2019

c. True Differential Figure 3. Three Ways of Interfacing Transducers for High Noise Immunity

Ideally, a microphone preamplifier responds to only the difference between the two input signals and rejects common-mode voltages and noise. In practice, there is a small change in output voltage when both inputs experience the same common-mode voltage change; the ratio of these voltages is called the common-mode gain. Common-mode rejection (CMR) is the logarithm of the ratio of differential-mode gain to common-mode gain, expressed in dB.
PHANTOM POWERING

A typical phantom microphone powering circuit is shown in Figure 4. Z1 to Z4 provide transient overvoltage protection for the SSM2019 whenever microphones are plugged in or unplugged.

+48V

C1 +IN R3 6.8k 1% R1 10k Z1 Z2 Z3 Z4 C4 200pF

+18V

R5 100

RG1 RG

SSM2019
RG2

VOUT

C3 47 F IN

R4 6.8k 1% C2

R2 10k

18V

C1, C2: 22 F TO 47 F, 63V, TANTALUM OR ELECTROLYTIC Z1Z4: 12V, 1/2W

Figure 4. SSM2019 in Phantom Powered Microphone Circuit

REV. 0

SSM2019
BUS SUMMING AMPLIFIER

In addition to its use as a microphone preamplifier, the SSM2019 can be used as a very low noise summing amplifier. Such a circuit is particularly useful when many medium impedance outputs are summed together to produce a high effective noise gain. The principle of the summing amplifier is to ground the SSM2019 inputs. Under these conditions, Pins 1 and 8 are ac virtual grounds sitting about 0.55 V below ground. To remove the 0.55 V offset, the circuit of Figure 5 is recommended. A2 forms a servo amplifier feeding the SSM2019 inputs. This places Pins l and 8 at a true dc virtual ground. R4 in conjunction with C2 removes the voltage noise of A2, and in fact just about any operational amplifier will work well here since it is removed from the signal path. If the dc offset at Pins l and 8 is not too

critical, then the servo loop can be replaced by the diode biasing scheme of Figure 5. If ac coupling is used throughout, then Pins 2 and 3 may be directly grounded.

+ IN IN R2 6.2k C1 R3 0.33 F 33k R4 5.1k A2 C2 200 F TO PINS 2 AND 3 IN4148 V R5 10k

Figure 5. Bus Summing Amplifier

OUTLINE DIMENSIONS 8-Lead Plastic Dual In-Line Package [PDIP] (N-8)


Dimensions shown in inches and (millimeters)
0.375 (9.53) 0.365 (9.27) 0.355 (9.02)
8 5

16-Lead Standard Small Outline Package [SOIC] Wide Body (RW-16)


Dimensions shown in millimeters and (inches)
10.50 (0.4134) 10.10 (0.3976)

0.295 (7.49) 0.285 (7.24) 0.275 (6.98) 0.325 (8.26) 0.310 (7.87) 0.300 (7.62) 0.015 (0.38) MIN SEATING PLANE 0.060 (1.52) 0.050 (1.27) 0.045 (1.14)

16

7.60 (0.2992) 7.40 (0.2913) 0.150 (3.81) 0.135 (3.43) 0.120 (3.05)
1 8

0.100 (2.54) BSC 0.180 (4.57) MAX 0.150 (3.81) 0.130 (3.30) 0.110 (2.79) 0.022 (0.56) 0.018 (0.46) 0.014 (0.36)

10.65 (0.4193) 10.00 (0.3937)

0.015 (0.38) 0.010 (0.25) 0.008 (0.20)

1.27 (0.0500) BSC 0.30 (0.0118) 0.10 (0.0039) 0.51 (0.0201) 0.33 (0.0130)

2.65 (0.1043) 2.35 (0.0925)

0.75 (0.0295) 0.25 (0.0098)

45

COPLANARITY 0.10

SEATING PLANE

0.32 (0.0126) 0.23 (0.0091)

8 0

1.27 (0.0500) 0.40 (0.0157)

COMPLIANT TO JEDEC STANDARDS MO-095AA CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN

COMPLIANT TO JEDEC STANDARDS MS-013AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN

8-Lead Standard Small Outline Package [SOIC]* Narrow Body (RN-8)


Dimensions shown in millimeters and (inches)
5.00 (0.1968) 4.80 (0.1890)
8 5 4

4.00 (0.1574) 3.80 (0.1497)

6.20 (0.2440) 5.80 (0.2284)

1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) COPLANARITY SEATING 0.10 PLANE

1.75 (0.0688) 1.35 (0.0532) 8 0.25 (0.0098) 0 0.19 (0.0075)

0.50 (0.0196) 0.25 (0.0099)

45

0.51 (0.0201) 0.33 (0.0130)

1.27 (0.0500) 0.41 (0.0160)

COMPLIANT TO JEDEC STANDARDS MS-012AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN

*Consult factory for availability.

REV. 0

PRINTED IN U.S.A.

C0271802/03(0)

SSM2019

VOUT

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