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2SD357

The document provides specifications for the INCHANGE Semiconductor isc 2SD357 silicon NPN power transistor. It describes key parameters like a collector-emitter breakdown voltage of 100V minimum and good hFE linearity. It is designed for high power driver applications in audio equipment. Maximum ratings include a collector-emitter voltage of 100V and continuous collector current of 0.8A. Electrical characteristics include a collector-emitter saturation voltage below 1V at 0.3A collector current and a DC current gain range of 55 to 300.

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105 views2 pages

2SD357

The document provides specifications for the INCHANGE Semiconductor isc 2SD357 silicon NPN power transistor. It describes key parameters like a collector-emitter breakdown voltage of 100V minimum and good hFE linearity. It is designed for high power driver applications in audio equipment. Maximum ratings include a collector-emitter voltage of 100V and continuous collector current of 0.8A. Electrical characteristics include a collector-emitter saturation voltage below 1V at 0.3A collector current and a DC current gain range of 55 to 300.

Uploaded by

bambuga07
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SD357

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·Good Linearity of hFE
·Complement to Type 2SB527

APPLICATIONS
·Designed for AF high power dirver applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 110 V

VCEO Collector-Emitter Voltage 100 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 0.8 A

Collector Power Dissipation


1
@ Ta=25℃
PC W
Collector Power Dissipation
10
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SD357

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 100 V

V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 110 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA 1.0 V

VBE(on) Base-Emitter On Voltage IC= 50mA; VCE= 4V 0.7 V

ICBO Collector Cutoff Current VCB= 25V; IE= 0 10 μA

ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ 1 mA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA

hFE DC Current Gain IC= 0.3A; VCE= 4V 55 300

‹ hFE Classifications

C D E

55-110 90-180 150-300

isc Website：www.iscsemi.cn 2

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