OMROB Lab.

Electronic Devices &

Circuits (EE-215)

Course Code: EE-215

Credit Hour: 3-1
Theory: 48 Hr.
Course Instructor: Dr. M Ayaz Shirazi
Introduction to Instructor
 Completed Ph.D. (Electronics) from Kyungpook National
University, South Korea
 Former Post-doctoral researcher in South Korea’s Highly
ranked university, KAIST
 Member of AI Committee (PNEC NUST)
 Author of nine (09) Impact factor journal publications
 Active Researcher in the areas of Computer Vision, AI,
and Robotics

<1>
Introduction to Instructor
 KNU International Graduate Scholarship (KINGS) Award
(Fully-funded scholarship for Ph.D. course work)
 Best (Journal) Paper Award 2017 (Out of the SCI(E)
papers published in School of Electronics Engineering,
Kyungpook National University )
 GCORE and BK21 Plus Postdoctoral Fellowships
 Co–PI, HEC NRPU Research Grant 2021 (Funding
Rs. 8.818 Million).

<2>
 Course Outline

<3>
 Administrative

 At least 75% attendance policy will be enforced.

 Office Location: Power Electronics Lab
 Lecture (Section ‘A’): Monday 11:40 to 12:30 hours
Friday 08:30 to 10:15 hours
 Lecture (Section ‘B’): Tuesday 08:30 to 10:15 hours
Thursday 08:30 to 09:20 hours
 Office Hours: Thursday 09:25 to 11:10 hours
 Email: [email protected]
Tentative Grading Policy

Quizzes (03) 10%

OHTs (02) 30%

Final Examination 45%

Assign 1 5%

Assign 2/Project/CEP 10%

 Course books

 Textbook
 Electronic Devices and Circuits by Robert L. Boylestad, Louis
Nashelsky, 12th Ed., Pearson Education, ISBN 978-81-317-2529-0
 Electronic Devices, Thomas Floyd, 6th Ed, Prentice Hall, 2002,
ISBN 013028484X
 Reference book
 Microelectronic Circuits by Sedra Smith, Prentice Hall, ISBN 00706
17112
 Lecture/Slides from Open-source internet
 Tentative Modules

 Module 1:
 Review of semiconductor diode
 Principle of working of diode
 Diode clipper, clamper and rectifier circuits
 Zener diode biasing circuits
 Tentative Modules

 Module 2:
 Construction, types, biasing and operation of
BJT devices
 BJT input and output characteristics,
specifications
 Different BJT Bias techniques and circuit
configurations (DC analysis)
 BJT ac-small signal equivalent models
 Tentative Modules

 Module 3:
 BJT Small-signal amplifier design
 Analysis for different configurations of
Amplifier
 Importance of feedback amplifier
 Feedback amplifier topologies and
determination of ac parameters
 Power amplifiers and push-pull power
amplifiers
 Tentative Modules

 Module 4:
 Construction of Field effect transistor
 Theory of operation and characteristic of
JFET and MOSFET
 FET/MOSFET dc biasing and analysis for
different configurations
 FET small-signal analysis
 Intro to Electronic & Semiconductor
Theory

 Overview of electronics
 Semiconductor material
 Conduction in semiconductors, Free
electrons and holes as carriers
 Intrinsic and Extrinsic semiconductor
Overview of Electronics
IoT
Applications in Daily Life
Applications in Daily Life
 Semiconductor Theory

 Valence Band The highest energy level that

the valence electrons can attain and still be
influenced by the nucleus
 Conduction Band The outermost energy level
of an atom
 Forbidden Gap Forbidden band of energy
levels in which no electrons are found
SEMICONDUCTOR MATERIAL
 SEMICONDUCTOR
• Semiconductor - electrical conductivity between conductor and
insulator - very sensitive to temperature, magnetic force and
light.
• Conductivity becomes better - exposed to heat energy. This is
because the electron valence is able to absorb the heat energy
and move to the higher outer orbit.
• The energetic electrons are able to break their covalent
bonding easily and become free electrons.
• In an energy band, the valence band of a semiconductor (i.e.,
Germanium and Silicon) is mostly fulfilled while the conduction
band is mostly empty.
• The forbidden energy gap between both conduction and
valence bands is small (~ 1 eV). (Eg for silicon are 1.1 eV and
0.67 eV for germanium).
ENERGY DIAGRAMS
 COVALENT BOND

Atoms joined together by an electron sharing

process that changes the electrical
conductivity of the material, causing each
group of atoms to become stable.
 SEMICONDUCTOR CRYSTAL

The 4 valence electrons of one atom form a bonding

arrangement with adjoining atoms, creating eight
shared valence electrons for each atom and producing a
state of chemical stability
N- and P-type Semiconductors

The process of creating N- and P-

type
materials is called doping.
Other atoms with 5 electrons such as Other atoms with 3 electrons such
Antimony are added to Silicon to as Boron are added to Silicon to
increase the free electrons. create a deficiency of electrons or
hole charges.
N-type
P-type
 Semiconductor

 The 4 valence electrons of one atom form a bonding

arrangement with adjoining atoms, creating eight shared
valence electrons for each atom and producing a state of
chemical stability

 The recombination process occurs when electron at the

conduction band falls (due to energy loss) and filled up the
holes in the valence band.
 This process does not create current, but only seen as
charge cancellation.

 Free electrons tend to find holes, while holes tends to attract

free electrons.
 Both are trying to re-establish the covalent bonding.
 Semiconductor
• The presence of free electrons and holes in semiconductor
contributes to current flow when potential (voltage) is applied
across the material.
• When hole exists, it is easier for the neibouring valence
electrons to move and fills up the holes when voltage potential
is applied.
• The process continues until current is produced.
• ‘Hole’ current occurs at the valence band, because electrons in
valence band will not become free electrons only by moving from
one atom to another.
• Electron current occurs only in the conduction band and
involves free electron flows.
• In short, hole current is actually the flow of electrons, but, only
electrons in the valence band are involved.
• Hole flows in opposite direction from the electron.
Semiconductor
Covalent bonds in a silicon crystal
Covalent bonds in a silicon crystal
Energy and Bonding diagrams
 Intrinsic Semiconductor
 Pure semiconductor - Ex.: tetravalent element (Group IV)
(Germanium & Silicon are two widely used elements for the
making of diod, transistor and ICs)
 Energy The obvious difference between Germanium and
Silicon is the amount of energy required to cross the
forbidden gap (Eg for Silicon is 1.1 eV and 0.67 eV for
Germanium).
 Resistance is reduced when temperature increased.
 However, the resistance by the Silicon crystal is higher
than the Germanium crystal.
 That is why Germanium is lesser used in electronic
devices as heat is one of parameter that is hard to be
controlled, the circuit design must avoid/ reduce the heat
generation as much as possible.
 All atoms in Group IV have 4 valence electrons. In order to
obtain a stable material, every valence electrons is attached to
their adjacent neighbor‘s valence electron through the
covalent bonding.
 Extrinsic Semiconductor

 An impure semiconductor - obtained when an intrinsic

semiconductor is doped with impure atom.
 Doping is a process of adding impure substance to
intrinsic semiconductor material in a controlled
manner so that the crystal form does not changed.
 Almost all semiconductor components are composed
from extrinsic semiconductor material.
 There are two extrinsic semiconductor types: n and p.
 Both of them are obtained by adding impure atoms
which has certain electrons valence to the pure
material.
 N-type Material
 N-type material is obtained by adding impure atom which has 5
valence electrons, called as pentavalent atom. Ex.: antimony,
arsenic, and phosphorus (Gorup V material). The process is called
as doping.

 Doping - a process of adding other materials called impurities to

the semiconductor crystal to change its electrical characteristics

 This is due to the 5th electron from the impure atom which did not
formed any covalent bond with the semiconductor atom.

 This electron enters the conduction band as free electron.

 No hole is created from this process.

 N-type Material
N-type Material

• Since the impure atom has donate one excess

electron, this impure atom is called donor atom.

• This doped donor material is known as n-type

material because the free electron has negative
charge (negative carrier)

• When the pentavalent impure atom donate its excess

electron, it looses one electron.

• This process caused the atom becomes unstable

because the number of electron is no longer the same
as the proton.
 N-type Material
Pentavalent impurity atom in a silicon crystal structure.
An antimony (Sb) impurity atom is shown in the center.
The extra electron from the Sb atom becomes a free ele
ctron.
P-type Material
P-type Material
 P-type Material

 If an impure atom for Group III was added

to intrinsic semiconductor material, p-
type material will be obtained.
 Impure atom of Group III (trivalent atom):
Boron, Aluminium, Indium and Gallium
has 3 valence electrons.
 When trivalent atom make a bonding to
the semiconductor material‘s atom, only
3 bonds are formed.
 These bonds lack one electron to com
plete the outest shell with 8 electrons.
As a consequence, a hole is formed (p
ositive charge carrier). Crystal structure concicting
 No free electron produced through this acceptor atom.
 P-type Material

• Since there exist a hole, the

trivalent atom is ready to
accept electron, thus it is called
as an acceptor atom.
• The increase of positive charge
carrier caused the material been
classified as p-type.
• When the trivalent impure atom
received an electron, it becomes
unstable because the number of
electron is more than than the
proton.
• This process has changed the
acceptor atom to negative ion or
acceptor ion.
 P-type Material

Trivalent impurity atom in a silicon crystal structure. A boron

(B) impurity atom is shown in the center.