Scribd Logo
Upload

Welcome to Scribd!

  • 64 views

    P50NF06 Inchange

    Uploaded by

    Kwun Hok Chong
    This document summarizes the specifications of an N-channel MOSFET transistor from ISC with part number P50NF06. It can handle a continuous drain current of 50A at room temperature and has a maximum on-resistance of 28mΩ. It is suitable for applications requiring high current switching such as power supplies, DC-DC converters, and monitors. The document lists electrical characteristics including breakdown voltage, threshold voltage, leakage currents and more.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    P50NF06 Inchange

    Uploaded by

    Kwun Hok Chong
    64 views2 pages
    This document summarizes the specifications of an N-channel MOSFET transistor from ISC with part number P50NF06. It can handle a continuous drain current of 50A at room temperature and has a maximum on-resistance of 28mΩ. It is suitable for applications requiring high current switching such as power supplies, DC-DC converters, and monitors. The document lists electrical characteristics including breakdown voltage, threshold voltage, leakage currents and more.

    Original Title

    P50NF06-INCHANGE

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document summarizes the specifications of an N-channel MOSFET transistor from ISC with part number P50NF06. It can handle a continuous drain current of 50A at room temperature and has a maximum on-resistance of 28mΩ. It is suitable for applications requiring high current switching such as power supplies, DC-DC converters, and monitors. The document lists electrical characteristics including breakdown voltage, threshold voltage, leakage currents and more.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    64 views2 pages

    P50NF06 Inchange

    Uploaded by

    Kwun Hok Chong
    This document summarizes the specifications of an N-channel MOSFET transistor from ISC with part number P50NF06. It can handle a continuous drain current of 50A at room temperature and has a maximum on-resistance of 28mΩ. It is suitable for applications requiring high current switching such as power supplies, DC-DC converters, and monitors. The document lists electrical characteristics including breakdown voltage, threshold voltage, leakage currents and more.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    isc N-Channel MOSFET Transistor P50NF06

    DESCRIPTION
    ·Drain Current ID=50A@ TC=25℃
    ·Drain Source Voltage-
    : VDSS=60V(Min)
    ·Static Drain-Source On-Resistance
    : RDS(on) = 28mΩ(Max)
    ·Fast Switching Speed
    ·Low Drive Requirement
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation
    APPLICATIONS
    ·High current , high speed switching
    ·Switch mode power supplies
    ·DC-DC converters for telecom, industrial,and lighting
    equipment ideal for monitor’s B+ function

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL ARAMETER VALUE UNIT

    VDSS Drain-Source Voltage (VGS=0) 60 V

    VGS Gate-Source Voltage ±20 V

    Drain Current-continuous@ TC=25℃ 50


    ID A
    Drain Current-continuous@ TC=100℃ 35

    Ptot Total Dissipation@TC=25℃ 150 W

    Tj Max. Operating Junction Temperature -55~150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    THERMAL CHARACTERISTICS

    SYMBOL PARAMETER MAX UNIT

    Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    isc N-Channel Mosfet Transistor P50NF06

    ·ELECTRICAL CHARACTERISTICS (TC=25℃)

    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

    V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 60 V

    VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

    RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 25A 0.028 Ω

    IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA

    IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 10 uA

    VSD Diode Forward Voltage IF= 50A; VGS= 0 2.0 V

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in equipment
    which could have applications in hazardous environments, aerospace industry, or medical
    field. Please contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

    You might also like