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A.electronics Worksheet 1

This worksheet provides questions for electrical and computer engineering students regarding applied electronics concepts involving semiconductor materials and pn junction diodes. Students are asked to: [1] Describe intrinsic and extrinsic semiconductor materials and carrier concentrations; [2] Explain drift and diffusion currents; [3] Describe how a pn junction is formed and its operating states; [4] Analyze simple diode rectifier circuits; and [5] Solve problems involving semiconductor doping, conductivity, diode voltages and circuit currents. The questions cover fundamental semiconductor physics and analyze diode applications in rectification circuits.

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hayatseid2002
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144 views3 pages

A.electronics Worksheet 1

This worksheet provides questions for electrical and computer engineering students regarding applied electronics concepts involving semiconductor materials and pn junction diodes. Students are asked to: [1] Describe intrinsic and extrinsic semiconductor materials and carrier concentrations; [2] Explain drift and diffusion currents; [3] Describe how a pn junction is formed and its operating states; [4] Analyze simple diode rectifier circuits; and [5] Solve problems involving semiconductor doping, conductivity, diode voltages and circuit currents. The questions cover fundamental semiconductor physics and analyze diode applications in rectification circuits.

Uploaded by

hayatseid2002
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Wollo University

Kombolcha Institute of Technology


School of Electrical and Computer Engineering

Applied Electronics Worksheet One

Target for Electrical and Computer Engineering 2nd Year

1. Describe an intrinsic semiconductor material. What is meant by the intrinsic carrier


concentration
2. Describe an extrinsic semiconductor material. What is the electron concentration in terms
of the donor impurity concentration? What is the hole concentration in terms of the
acceptor impurity concentration?
3. Describe the concepts of drift current and diffusion current in a semiconductor material
4. How is a pn junction formed? What is meant by a built-in potential barrier, and how is it
formed ?
5. Describe how you will know the forward- and reverse-bias states of the p–n junction
diode.
6. Describe a simple half wave & full-wave diode rectifier circuit and their advantages
7. Find the concentration of electrons and holes in a sample of germanium that has a
concentration of donor atoms equal to 1015 𝑐𝑚-3. Is the semiconductor n-type or p-type?
Repeat this for silicon.
8. What will be the conductivity of pure silicon crystal at 300 K temperature. If electron
hole pairs per cm3 is 1.072 𝑥10 at this Temp; 𝜇 = 1350 𝑐𝑚 / volt sec & 𝜇 = 480 𝑐𝑚
/ volt sec

9. (a) The applied electric field in p-type silicon is E = 10 V/cm. The semiconductor
conductivity is 𝜎 = 1.5 (Ω– 𝑐𝑚)-1 and the cross-sectional area is 𝐴 = 10 𝑐𝑚 .
Determine the drift current.

(b) The cross-sectional area of a semiconductor is 𝐴 = 2 × 10 𝑐𝑚 and the


resistivity is 𝜎 = 0.4 (Ω– 𝑐𝑚)-1. If the drift current is I = 1.2 mA, what electric field
must be applied?
10. The reverse-saturation current of a pn junction diode is 𝐼 = 10 𝐴. Determine the diode
voltage to produce currents of (i) 10 μA , and (ii) -5 × 10-12 A

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11. Determine the voltage Vo in the circuit shown in Figure below Assume the diodes to
be of silicon.

12. Determine the currents I1, I2 and I3 for the network shown assume the diodes are silicon.

13. Determine the currents I for the network shown assume the diodes are silicon.

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14. For a silicon diode shown in figure Determine ID and Vo for the networks

15. Determine the voltage Vo in the circuit shown in Figure below Assume the diodes to
be of silicon

Take the following constants

Charge of an electron= 1.6 × 10-19 coulombs


Voltage drop across silicon diode = 0.7 V

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