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Vlsi QB

This document contains information about a VLSI design course, including: 1. It provides questions from 4 units that cover topics like MOS transistor basics, VLSI design process, gate-level design, physical design, and subsystem design. 2. The questions range from basic knowledge/definition questions to more complex questions involving circuit design and derivations. 3. The document lists learning levels and course outcomes for each question to help evaluate students' understanding of key VLSI design concepts and their ability to apply them.

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0% found this document useful (0 votes)
47 views5 pages

Vlsi QB

This document contains information about a VLSI design course, including: 1. It provides questions from 4 units that cover topics like MOS transistor basics, VLSI design process, gate-level design, physical design, and subsystem design. 2. The questions range from basic knowledge/definition questions to more complex questions involving circuit design and derivations. 3. The document lists learning levels and course outcomes for each question to help evaluate students' understanding of key VLSI design concepts and their ability to apply them.

Uploaded by

Manaswi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Course Code: 20EC0442 R20

SIDDHARTH INSTITUTE OF ENGINEERING & TECHNOLOGY: PUTTUR-517 583


(AUTONOMOUS)
(Approved by AICTE, New Delhi& Affiliated to JNTUA, Ananthapuramu)
(Accredited by NBA for Civil, EEE, Mech., ECE & CSE)
(Accredited by NAAC with ‘A+’ Grade)
Puttur -517583, Chittoor District, A.P. (India)

QUESTION BANK (DESCRIPTIVE)

SUBJECT 20EC0442-VLSI DESIGN COURSE & B.Tech - ECE


WITH CODE: BRANCH:
YEAR & SEM: IV & I REGULATION: R20
UNIT –I
INTRODUCTION AND BASIC ELECTRICAL PROPERTIES OF MOS AND Bi-CMOS
CIRCUITS

1 a) Summarize the evolution of microelectronics. [L2][CO1] [6 M]


b) Explain working of the NMOS transistor. [L2][CO1] [6 M]
2 a) Illustrate about basic MOS transistors. [L2][CO1] [6 M]
b) Compare different modes in NMOS Transistor. [L2][CO1] [6 M]
3 a) Define Metal Oxide Semiconductor VLSI Technology. [L2][CO1] [6 M]
b) List the advantages and disadvantages of IC. [L1][CO1] [6 M]
4 a) Illustrate the steps involved in NMOS fabrication process with neat [L2][CO2] [6 M]
sketches.
b) Discuss about body bias effect in the NMOS transistor. [L2][CO1] [6 M]
5 Explain the steps involved in P-Well CMOS fabrication process with neat [L2][CO2] [12M]
sketches.
6 a) Compare CMOS with bipolar technology in different aspects. [L2][CO1] [6 M]
b) State the different types of CMOS Process and illustrate the additional steps [L2][CO2] [6 M]
involved in Twin Tub Process.

7 a) Determine the relationship between Ids & Vds in non-saturated region. [L3][CO2] [6 M]
b) Explain in detail about Transconductance. [L2][CO2] [6 M]
8 a) Derive the relationship between Ids & Vds in saturated region. [L3][CO2] [6 M]
b) Give the basic steps for IC fabrication. [L2][CO2] [6 M]
9 a) Define output conductance and figure of merit [L1][CO2] [6 M]
b) Show the circuit diagram of BiCMOS inverter and explain its operation. [L4][CO2] [6 M]
10 a) What are the different forms of Pull Up Loads? Which is the best choice for [L1][CO2] [6 M]
realization?

b) Derive the expression for threshold voltage for MOS transistors. [L3][CO2] [6 M]
Course Code: 20EC0442 R20

UNIT –II
VLSI CIRCUIT DESIGN PROCESS

1 a) Explain the steps involved in VLSI Design flow. [L2] [CO3] [6M]

b) Construct the stick diagram of a 2-input CMOS NAND gate. [L3] [CO3] [6M]

2 a) What are lambda-based design rules? Explain. [L1] [CO3] [6M]

b) Illustrate design rules for wires and MOS transistors. [L2] [CO3] [6M]

3 a) Summarize 2µm based design rules with neat sketches. [L2] [CO3] [6M]

b) Draw the layout diagram of NMOS inverter circuit such that both input [L4] [CO3] [6M]
and output points are connected with Polysilicon layer.

4 a) Explain about Stick diagram with one example. [L2] [CO3] [6M]

b) Sketch the layout diagram for 2-input CMOS NAND gate. [L3] [CO3] [6M]

5 a) Explain 2µm design rules for contacts and transistors. [L2] [CO3] [6M]

b) Sketch the layout diagram for CMOS inverter. [L3] [CO3] [6M]

6 a) Construct stick diagram for 𝒀 = (𝑨𝑩 + 𝑪𝑫) in NMOS design style. [L3] [CO3] [6M]

b) Construct the layout diagram for 2-input CMOS NOR gate. [L3] [CO3] [6M]

7 Construct layout diagram for the logic equations in CMOS logic. [L3] [CO3] [12M]
(i) 𝒀 = (𝑨 + 𝑩)𝑪 (ii) Z= (𝑨𝑩 + 𝑪𝑫)𝑬
8 a) Illustrate λ-design rules for contact cuts. [L2] [CO3] [6M]

b) How a P-MOS transistor forms in lambda-based design rules? Explain. [L1] [CO3] [6M]

9 a) Illustrate stick diagram of AND-OR-INVERTER in CMOS design Style. [L2] [CO3] [6M]

b) Explain about Implant and demarcation line in stick diagrams with neat [L2] [CO3] [6M]
sketches.
10 a) Construct the stick diagram for 2-input CMOS XOR gate. [L3] [CO3] [6M]

b) Explain different types of MOS layers used in VLSI circuits. [L2] [CO1] [6M]
Course Code: 20EC0442 R20

UNIT –III
GATE LEVEL DESIGN & PHYSICAL DESIGN

1 a) Sketch 2 x 1 mux using transmission gates. [L3] [CO4] [6M]

b) Explain the implementation of AOI using CMOS design style with neat [L2] [CO4] [6M]
sketches.

2 a) Draw the CMOS implementation of 4X1 mux using transmission gates? [L1][CO4] [6M]

b) Explain pseudo NMOS logic gate? [L2][CO4] [6M]

3 a) What is switch logic? Explain with an example. [L1] [CO4] [6M]

b) Explain about pass transistors logic with an example. [L2] [CO4] [6M]

4 a) What is pseudo NMOS logic? Explain with an example [L1] [CO4] [6M]

b) Construct 2-input NAND gate by using pseudo NMOS logic. [L3] [CO4] [6M]

5 a) Explain dynamic CMOS logic circuit with an example. [L2] [CO4] [6M]

b) List the advantages & disadvantages of dynamic CMOS logic. [L1] [CO4] [6M]

6 Explain the following with an example. [L2] [CO4] [12M]

(i) Domino CMOS logic. (ii) NOR A logic.

7 a) Explain the criteria for choice of layers. [L2] [CO6] [6M]

b) Explain about complex logic gates. [L2] [CO4] [6M]

8 a) What is the necessity of floor planning concept in VLSI circuits? [L2] [CO5] [6M]
Discuss with suitable example.

b) Explain the following terms: [L2] [CO5] [6M]


(i) Placement
(ii) Routing

9 a) What design methods are used in physical design cycle? Explain each [L1] [CO4] [6M]
term with suitable diagrams.

b) What is routing? Explain about different routing techniques. [L2] [CO4] [6M]

10 a) Discuss about the Power Estimation in CMOS circuit. [L2] [CO5] [6M]
b) Explain about Power delay estimation in VLSI circuits. [L2] [CO5] [6M]
Course Code: 20EC0442 R20

UNIT –IV
SUBSYSTEM DESIGN

1 a) Define the Counters in the digital circuit. Design 4-bit Asynchronous [L1] [CO6] [6M]
counter.

b) Define Parity generator logic circuits. Design 4-bit Parity generator [L3] [CO6] [6M]
using EX-OR gate.

2 a) Explain different adder designs in sub circuit design with neat sketches. [L2] [CO6] [6M]

b) Differentiate Comparator and Magnitude Comparator with example. [L4] [CO6] [6M]

3 a) What is shifter? List the types of shift registers and explain. [L1] [CO4] [6M]

b) Explain about 6 transistor Static memory cell. [L2] [CO4] [6M]

4 Explain the following logic circuit. [L2] [CO6] [12M]


(i) Parity Generator
(ii) Comparator

5 Design an Arithmetic and Logic Unit circuit with four functions using [L3] [CO4] [12M]
multiplexers and explain its operation.

6 a) Compare different types of memory elements. [L4 [CO4] [6M]

b) Develop the 4x4 array multiplier. [L3] [CO4] [6M]

7 a) Explain the working of Zero/one detector implemented with adder circuit. [L2] [CO4] [6M]

b) List the advantages and applications of Zero/one detector. [L1] [CO4] [6M]

8 Summarize the following. [L2] [CO4] [12M]


(i) Unsigned magnitude comparator.
(ii) Asynchronous Counters.

9 a) Construct and explain the circuit diagram of 3-bit LFSR with example. [L3] [CO6] [6M]

b) Construct and explain the Johnson counter. [L3] [CO6] [6M]

10 a) Construct and explain the circuit diagram of 4-bit Ripple Carry Adder. [L3] [CO4] [4M]

b) Construct and explain the ripple counter. [L3] [CO4] [4M]

c) Explain about 4 transistor Dynamic memory cell. [L2] [CO4] [4M]


Course Code: 20EC0442 R20

UNIT –V
SEMICONDUCTOR INTEGRATED CIRCUIT DESIGN AND CMOS TESTING

1 a) Compare PROM, PAL, and PLA with an example. [L2] [CO5] [6M]

b) Design the PAL Structure for the Boolean function [L3] [CO5] [6M]
f1(a,b,c,d)=ab+bc & f2(a,b,c,d)=ab+cd.
2 a) Illustrate the architecture of FPGA with neat sketch. [L2] [CO5] [6M]

b) Discuss about the merits of FPGA over other PLD architectures. [L2] [CO5] [6M]

3 a) Describe about CPLD structure in detail and explain each block. [L1] [CO5] [6M]

b) Generalize the design approach for VLSI system design. [L2] [CO6] [6M]

4 Design the following functions in PLA structure. [L3] [CO5] [12M]

(i) Y1=A’B’C’+ABC+A’B+ABC’

(ii) Y2=ABC+A’B’C+AC

(iii) Y3=A’BC’+AB’C+B’C’

5 a) Explain in detail about standard cell design with suitable diagrams. [L2] [CO6] [6M]

b) Give examples of various fault models available for VLSI testing. [L2] [CO5] [6M]

6 a) What is the need for testing? Explain about Fault simulation. [L1] [CO5] [6M]

b) Give a logic circuit example in which stuck-at-1 fault and stuck-at-0 fault are [L2] [CO5] [6M]
indistinguishable.
7 a) What is FPGA. Draw and explain basic structure of FPGA. [L2] [CO5] [6M]

b) Discuss about the Fault coverage and how to find it? [L1] [CO5] [6M]

8 Explain Chip Level Test techniques and its methodology. [L2] [CO5] [12M]

9 a) What is testing? Explain any three test principles. [L1] [CO5] [6M]

b) What is controllability and observability? Give examples to explain it. [L2] [CO5] [6M]

10 What is BILBO? Draw the logic diagram of BILBO & explain its operation in [L2] [CO5] [12M]
different modes.

Prepared by : C.Vijaya Bhaskar,

P.Alekya,

Department of ECE, SIETK, Puttur.

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