Power

Electronics
Lecture (1): Introduction to
Power Electronics
Instructor
Samah Mohamed Hashim Siddig
PhD 2016 Electrical and Electronics Engineering -
Solar Energy Efficiency
University of Khartoum since 2009
Renewable energy institute 2022 “Renewable
Energy Expert”
Research: Solar energy systems performance in
hot regions.
Head of engineers in a solar company 2020
 Introduction to Power Electronics
Uncontrolled Rectifier
Switching Characteristics of Power Devices
Controlled Rectifier
List of DC-DC Converters
DC Power Supplies
Topics AC Voltage Control
DC-AC Inverter
Utility Application of Power Electronics
Project
What is Power Electronics?
Power electronics combines power, electronics, and
control.
Control deals with the steady-state and dynamic
characteristics of closed-loop systems.
Power deals with the static and rotating power
equipment for the generation, transmission, and
distribution of electric energy.
Electronics deal with the solid-state devices and -
circuits for signal processing to meet the desired
control objectives.
Power electronics may be defined as the application of
solid-state electronics for the control and conversion of
electric power.
Power electronics is based primarily on the switching of
the power semiconductor devices.
With the development of power semiconductor
technology, the power-handling capabilities and the
switching speed of the power devices have improved -
tremendously.
The development of microprocessors and
microcomputer technology has a great impact on the
control and synthesizing the control strategy for the
power semiconductor devices.
History of Power Electronics
The history of power electronics began with the introduction of the mercury arc rectifier in
1900. Then the metal tank rectifier, grid-controlled vacuum-tube rectifier, ignitron,
phanotron, and thyratron were introduced gradually.
These devices were applied for power control until the 1950s.
The first electronics revolution began in 1948 with the invention of the silicon transistor at
Bell Telephone Laboratories by Bardeen, Brattain, and Schokley.
Most of today’s advanced electronic technologies are traceable to that invention.
Modern microelectronics evolved over the years from silicon semiconductors.
The next breakthrough, in 1956, was also from Bell Laboratories: the invention of the PNPN
triggering transistor, which was defined as a thyristor or silicon-controlled rectifier (SCR).
The history of power electronics began with
the introduction of the mercury arc rectifier in
1900
Metal tank rectifier
 Thyratron

A thyratron is a type of gas-filled tube used as a high-power

electrical switch and controlled rectifier.
Power Semiconductor Devices
Since the first thyristor SCR was developed in late 1957, there have been tremendous
advances in the power semiconductor devices.
Until 1970, the conventional thyristors had been exclusively used for power control in
industrial applications. Since 1970, various types of power semiconductor devices
were developed and became commercially available.
Figure below shows the classification of the power semiconductors, which are made
of either silicon or silicon carbide. Silicon carbide devices are, however, under
development.
Silicon carbide
Silicon carbide electrons need almost
three times more energy to reach the
conduction band as compared to silicon.
As a result, SiC-based devices withstand
far higher voltages and temperatures
than their silicon counterparts.
A SiC-based device can have the same
dimensions as a silicon device but can
withstand 10 times the voltage.
Also, a SiC device can be less than a tenth
the thickness of a silicon device but carry
the same voltage rating.
These thinner devices are faster and
boast less resistance, which means less
energy is lost to heat when a silicon
carbide diode or transistor is conducting
electricity.
Control Characteristics of Power Devices
The power semiconductor switching devices can be classified on the basis of:
1. Uncontrolled turn-on and turn-off (e.g., diode);
2. Controlled turn-on and uncontrolled turn-off (e.g., SCR);
3. Controlled turn-on and -off characteristics (e.g., BJT, MOSFET, GTO, SITH, IGBT, SIT, MCT);
4. Continuous gate signal requirement (BJT, MOSFET, IGBT, SIT);
5. Pulse gate requirement (e.g., SCR, GTO, MCT);
6. Bipolar voltage-withstanding capability (SCR, GTO);
7. Unipolar voltage-withstanding capability (BJT, MOSFET, GTO, IGBT, MCT);
8. Bidirectional current capability (TRIAC, RCT);
9. Unidirectional current capability (SCR, GTO, BJT, MOSFET, MCT, IGBT, SITH, SIT, diode).
Types of Power Electronic Circuits
For the control of electric power or
power conditioning, the conversion of
electric power from one form to
another is necessary and the switching
characteristics of the power devices
permit these conversions.
The power electronics circuits can be
classified into six types:
Diode rectifier

1. Diode rectifiers
2. Dc–dc converters (dc choppers)
3. Dc–ac converters (inverters)

DC chopper

Inverter
4. Ac–dc converters (controlled rectifiers)

5. Ac–ac converters (ac voltage controllers)

6. Static switches
Controlled rectifier

AC voltage controller

Static switch