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BBEE103

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75 views11 pages

BBEE103

Question paper

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Yashu Yashu
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Basic Electronics Question Bank Question Bank for Basic Electronics (BBEE103/203) Module - 1 Semiconductor Diodes 1. Explain the operation of pn junction diode under forward and reverse bias conditions with the help of V-I characteristics curve. 2. Explain V-I characteristics of a PN junction diode for both forward and reverse characteristics. (Feb ‘23 - 4M) 3. Explain forward and reverse biasing VI characteristics of PN junction. (MQP ‘22 - 6M) 4. Explain the forward and reverse characteristics of semiconductor diode. (M@QP ‘22 - 8M) 5. Explain the forward and reverse characteristics of a silicon diode. (MQP 22 - 8M) 6. Draw and explain the V-I characteristics of a Ge (Germanium) diode. 7. Define following diode parameters: (i) Static resistance (ii) Dynamic resistance )) Knee voltage (iv) Forward voltage drop (v) Maximum forward current (vi) Reverse saturation current (vii) Reverse breakdown voltage (viii) Peak inverse voltage (PIV) (ix) Maximum power rating Explain the different diode approximation with neat figures. Construct the piecewise linear characteristic for a silicon diode which has a 0.25 dynamic resistance and a 200 mA maximum forward current. 10. With appropriate circuit diagram, explain the DC load line analysis of semiconductor diode. (Feb ‘23 - 8M) 11. With appropriate circuit diagram, explain the DC load line analysis of semiconductor diode. Also mention the importance of bias point. 12. For the circuit shown in the figure, draw the DC load line and locate Q-point. R,r100R Dd, Csihi con) 13. Find the value of the series resistance R required to drive a forward current of 1.25 mA through a Germanium diode froma 4.5 V battery. Write the circuit diagram showing all the values. Diode Applications i. Whatis arectifier? 2. Explain positive half wave rectifier with input and output waveforms. (MQP “22 - 6M) Question Bank Basic Electronics a 10. 1. 12, 13. 14. 15. 16. aw. 18, 19. 20. 21, Explain with neat diagram and waveforms, working of the half wave rectifier andalso derive an expression for the efficiency and ripple factor. (MQP ‘22 - 7M) Derive the expressions for Ige, Vacs lms Vrms, Fegulation, efficiency n,,ripple factor yand PIV of a half-wave rectifier. Show that the maximum efficiency ofa half wave rectifier is 40.6%. Show that the ripple factor of a half wave rectifier is 1.21. Explain the working of full wave rectifier with neat circuit diagram and waveforms. (Feb 23 - 8M, MQP °22 - 8M) With a neat circuit diagram and waveforms, explain the working of centre-tapped full wave rectifier and derive the efficiency for the same. Derive the expressions for Ige, Vaes ims» Vrms, Fegulation, efficiency n,,ripple factor yand PIV of afull-wave rectifier. Show that the maximum efficiency of a full wave rectifier is 81.2%. Whatis ripple factor? Show that the ripple factor ofa full wave rectifier is 0.48. With neat circuit diagram and waveforms, explain the working of a bridge rectifier. (MQP "22 - 7M) Derive the expressions for Ige, Vacs lms» Vrms, Fegulation, efficiency n,,ripple factor yand PIV of a bridge rectifier. Whatis the need for a capacitive filter? Explain. Describe the working of a capacitor filter for a half wave rectifier with a neat circuit diagram and necessary waveforms, (MQP "22 - 8M) With a neat diagram and waveforms, explain the full-wave rectifier with a capacitive filter and derive the expression for ripple factor. Explain RC 2-filter (MQP "22 - 8M) Explain the operation of RC r-filter using full wave rectifier. (Feb ‘23 - 8M) The input voltage to a half wave rectifier is V = 200 sin 50t. If R, = 1k and forward resistance of the diode is 50 0, find: i) The de current through the diode ii) The ac or rms value of current through the circuit iii) The de output voltage iv) The ac power input v) Rectifier efficiency (Feb '23 - 8M) A diode with Vp = 0.7 Vis connected as a half wave rectifier. The load resistance is 500.0 and the secondary RMS voltage is 22 V. Determine the peak output voltage and the peak load current. (MQP ‘22 - 4M) In a half wave rectifier, the input is from 30 V transformer, The load and diode forward resistances are 1000 and 10 respectively. Calculate the Lac, Irms» Pacr Pi. 1, PIV and regulation factor. Basic Electronics Question Banke 22. Ahalf wave rectifier from a supply 230 V, 50 Hz with a step-down transformer ratio 3:1 toa resistive load of 10 kM. The diode forward resistance is 75 0 and transformer secondary is 10 0. Calculate the DC current, DC voltage, efficiency and ripple factor. 23. Atransformer with 10:1 turns ratio is connected to.a half wave rectifier with supply voltage of 220 sin 210t If load and forward resistances are 5000 and 10 0 respectively, calculate the average output voltage, de output power, ac input power, rectification efficiency and peak inverse voltage. 24. In a full wave rectifier, the input is from 30 ~ 0 ~ 30 V transformer. The load and diode forward resistances are 100. and 10 0 respectively. Calculate the average load current, average load voltage and rectifier efficiency. (MQP ‘22 - 7M) 25. A full wave rectifier hasa load of 1 k.. The ac voltage applied to the diode is 200 — 0 — 200 V. If diode resistance is neglected, calculate (i) average dc current (ii) average dc voltage, 26. Asingle phase full wave rectifier supplies power to a 1 kM load. The AC voltage applied to the diode is 300 — 0 - 300 V. If diode resistance is 250 and that of the transformer secondary negligible, determine load current, average load voltage and rectification efficiency. 27. The inputto the full wave rectifier is v(t) = 200 sin 50t IfR, is 1kMand forward resistance of diode is 500, find: D.C current through the circuit ) The AC (rms) value of current through the circuit iii) The D.C output voltage iv) The A.C power input v) The D.C power output vi) Rectifier efficiency. 28. Theinputvoltage applied to the primary of a4:1 step down transformer of afull wave centre tap rectifier is 230 V,50 Hz If the load resistance is 600 and forward resistance is 20.9, determine the following: dc output power ))_ Rectification efficiency iii) PIV L30v SoH2 29. Determine the peak output voltage and current for a bridge rectifier circuit when the secondary RMS voltage is 30 V and the diode forward drop is 0.7 V. (MQP 22 - 4M) Zener Diodes 1. Name the junetion breakdowns in diodes. Explain them briefly. Question Bank Basic Electronics 2. 3. 4, 10. qd. 12. 13. 4, 15. 16. Distinguish between Zener and Avalanche breakdown, Write down the characteristic of Zener diode. (MQP ‘22 - 4M) A Zener diode with Vz = 4.3 V has Zz = 20 mA. Calculate the upper and lower limits of Vz when I, changes by +5 mA. What is Zener diode? With neat circuit diagram, explain the operation of voltage regulator with and without load. (Feb "23 - 4M) Explain how Zener diode can be used as a voltage regulator. (MQP ‘22 - 6M) Explain how a Zener diode can be used as voltage regulator by considering the no load and loaded conditions, (MQP "22 - 8M) Explain Zener diode as voltage regulator with no load. (QP 22 - 6M) Explain the performance of Zener diode voltage regulator in terms of source and loadeffects. Discuss the load and line regulation using Zener diode with neat circuit diagram and appropriate expressions. A Zener diode has a breakdown voltage of 10 V. Itis supplied from a voltage source varying between 20 to 40 V in series with a resistance of 820 0 Using an ideal Zener diode model, obtain the minimum and maximum Zener currents. (MQP 22 - 7M) A9V reference source is to use a series connected Zener diode and a resistor connected to 30 V supply. If Zener diode with Vz = 9 V, Izy = 20 mAis selected, then determine the value of series resistance and calculate the circuit current when the supply voltage drops to 27 V. A 4.3V Zener diode is connected in series with 820 01 resistor and DC supply voltage of 12V. Find the diode current and the power dissipation, For a Zener regulator shown in the figure, calculate the range of input voltage for which output will remain constant. 2K Ki TOK * Woe Nin 4 Vz = 6.1V, lamin = 25MA, Izmax = 25MA, rz = 00. Design a 6 V de reference source to operate from a 16 V supply. The circuit is to use alow- power Zener diode with Py = 400 mW and is to produce the maximum possible load current. Calculate the maximum load current that can be taken from the circuit. Design Zener voltage regulator for the following specifications: Input Voltage = 10V + 20%, Output Voltage = 5V,I, = 20MA, Izmin = SMA and lymax = 80ma. Basic Electronics Question Bank Module - 2 Bipolar Junction Transistors 1. With a neat diagram, explain the operation of an npn transistor. 2. With a neat diagram, explain the operation of a pnp transistor. 3. Explain various currents and voltages flowing through the BJT transistor. (M@QP ‘22 - 7M) 4. Define a and B. Determine the relationship between a and B. (MQP ‘22 - 6M) 5. Atransistor has B = 150 and I; is 12 mA. Calculate the approximate collector current (Ic) and base current (Ip). (Feb ‘23 - 4M) 6. Calculate Ic and Ig fora transistor that has aye = 0.98 and Ip = 100 HA. Determine the value of Bae (Or he) for the transistor. 7. Calculate age and Bae for the transistor if Ic is measured as 1 MA and Ig is 25 HA. 8. Describe with neat circuit diagram of BJT amplification for both voltage and current. (Feb ‘23 - 8M) 9. Explain BJT current amplification for increasing and decreasing Ig levels. (MQP “22 - 8M) 10. Describe how a transistor can be used as a voltage amplifier. (MQP ‘22 - 4M) 11. With neat diagram, explain the input and output characteristics of transistor in common base configuration. (Feb ‘23 - 8M) 12. Explain common base input characteristic of BJT. (MOP ‘22 - 8M, 6M) 13. Explain input and output characteristics of the common emitter configuration, (M@QP 22 - 6M) 14. Explain common emitter input characteristics. (MQP ‘22 - 4M) 15. Explain the output characteristics of a transistor in common emitter configuration. (MQP ‘22 - 8M) 16. Briefly explain common collector input characteristics. (Feb "23 - 4M) 17. Explain the transistor biasing circuit with relevant expressions. (MQP ‘22 - 7M) 18. With respect to BJT, describe the concept of obtaining the DC load line. (MQP ‘22 -4M) 19. Draw the DC load line for transistor and identify Q point. (MQP ‘22 - 8M) Field Effect Transistors 1. Explain the construction and operation of N-channel JFET. (Feb ‘23 - 8M) 2. Make use of N-channel JFET to describe its operation and characteristics. (MQP ‘22 - 7M) 3. Explain the working of an N-channel JFET. (MOP 22 - 8M, 6M) 4. Explain the construction and operation of P-channel JFET. Question Bank Basic Electronics 5. Explain the transfer and drain characteristics of a JFET. 6. Explain the operation of enhancement MOSFET. (QP ‘22 - 8M) 7. Make use of N-channel enhancement type MOSFET and describe the construction and working. (Feb'23 - 7M) 8. Explain the enhancement type MOSFET along with the drain characteristics. (MQP ‘22 - 8M) 9. Explain the transfer and drain characteristics of enhancement type MOSFET. 10. Explain depletion type MOSFET along with the transfer and drain characteristics. (Feb ‘23 - 8M) Module - 3 Operational Amplifiers L 2. 3. 10. What is an operational amplifier? Mention its applications. Explain block diagram representation oftypical op-amp. (Feb ‘23 - 8M, MQP ‘22 - 6M) Describe block diagram representation of an op-amp. Also describe its operational behavior with an equivalent circuit. (MQP ‘22 - 8M) Explain the following op-amp parameters (i) CMRR (ii) Slew rate (iii) Inputoffset voltage (iv) Input biascurrent (Feb ‘23 - 8M) With respect to an op-amp, explain the following: (i) Input offset voltage (ii) Slew rate (MQP "22 - 8M) Define Op-Amp parameters: Gain, CMRR, Slew Rate, Input resistance (MQP "22 - 8M) Explain the following terms related to op-amp: (i) Open loop voltage gain (ii) Common mode gain (iii) CMRR (iv) Maximum Output Voltage Swing (v) Input Offset Voltage (vi) Input Offset Current (vii) Input bias current (viii) Input resistance (ix) Output resistance (x) Slew rate (xi) PSRR/Supply voltage rejection ratio (xii) Virtual ground. Acertain op-amp has an open loop voltage gain of 1,00,000 and a common mode gain of 0.2. Determine the CMRR and express it in decibels. ‘An op-amp has a slew rate of 0.8 V/ysec. What is the maximum amplitude of undistorted sine wave that the op-amp can produce at a frequency of 40 kHz? What is the maximum frequency of the sine wave that op-amp can reproduce if the amplitude is 3 V? Briefly discuss the ideal characteristics of the op-amp. (MQP "22 - 7M) Op-Amp Applications 1. 2. Explain op-amp as an inverting and non-inverting amplifier. (Feb '23 - 8M) Explain inverting amplifier. (MQP ‘22 -4M) Basie Electrontes Question Banke 3. Aninverting amplifier using op-amp has feedback resistor of 10 kA. and one inputresistor of 1k. Calculate the gain of the op-amp and the output voltage if it is supplied with an input of OSV. (MQP "22 - 4M) 4, An inverting amplifier has Ry = 20k, Ry = 100 kQ. Find the output voltage, input resistance and input current for an input voltage of 1V. 5. Anon-invertingamplifierhas closed loop gain of 25. If input voltage V, = 10 mV,R, = 10 k0, determine the value of R, and output voltage Vy. 6. Explain working of a differential amplifier. (MQP "22 - 8M) 7. Briefly explain op-amp asa voltage follower. (Feb ‘23 - 4M) 8. Derive an expression for the 3-input summing circuit. (MQP "22 - 6M) 9. Describe a summing amplifier using an op-amp in an inverting configuration with three inputs. (MQP '22 - 8M) 10, Calculate the output voltage of a three-input inverting summing amplifier, given R, = 200 kM, Rp = 250 kA, Ry = 500 kM, Ry = 1 MO, V, = -2V,V, = —1Vand V, = +3V. 11. Design an adder circuit using an op-amp to give the output V, = ~(3V, + 4V; +5V,). Assume Ry = 120 kA. (Feb ‘23 - 4M) 12. Design the circuit diagram for the output voltage V, = —5(0.1V, + 0.2V, + 10V3).Also draw the neat circuit diagram. (MQP "22 - 7M) 13. Develop a summer circuit using op-amp to get the following output voltage Vo = ~(2Vy + 2V2)- (MQP ‘22 - 4M) 14, Design an adder circuit using op-amp to obtain an output voltage, V, = —[2V, + 3V) + 5V3]. Assume Ry = 10 kf2.With a neat circuit diagram, explain the subtractor using an op-amp. 15. Derive an expression for integrator and differentiator. (MQP "22 - 6M) 16. Describe an integrating amplifier using an op-amp in an inverting configuration. (MQP ‘22 - 8M) 17. Explain op-amp as an integrator circuit with a neat input and output waveforms using square wave as input. (Feb '23 - 8M, MQP ‘22 - 6M) Module - 4 Boolean Algebra and Logic Circuits 1 Convert the following numbers to its equivalent numbers and show the steps: (Feb ‘23 - 6M) i) (10110001101011.111100000), = (7), ii) (10110001101011.11110010), = (?)i6 iii) (1010.011). = 2 )ro Convert Decimal to Binary: (i) 41 (ii) 153 (iii)) 0.6875 (iv) 0.513 (MQP ‘22 - 8M) Question Banke Basie Electronics 3. 10. 1. 12, 13. 14, 15. 16. 17. Convert Binary to Decimal: (i) 110111 (ii) 10101010 (iii) 0110 (iv) 100.1010 (MQP 22 - 8M) Convert the following: (MQP "22 - 6M) i. (110.1101), = (?)i0 ii, (847.951),0 iii, (CAD.BF) 46 Convert the following: 1 (225)10 = C)2 =a =Chie fi, (11010111). =€?)i0 = Ma = 16 iii, (623)g = (10 =(7)2 = P16 iv. (2AC5)ag = (?)a0 = (2a = D2 Convert the following: (MQP "22 - 8M) a) 3A6.C58D 16) b) 0.687510) ¢) Compute the 9's compliment of 25.639 (10) 4) Compute the 1’s compliment of 11101.0110(.) Subtract the following using 10's complement: (Feb ‘23 - 6M) i) (72532 - 3250)49 ii) (3250 — 72532)40 Perform subtraction on the given numbers using 9's complement method: (a) 4,637 - 2,579 (b) 125 - 1,800 Perform subtraction on the given numbers using 10's complement method: (a) 2,043 - 4,361 (b) 1,631 - 745 Perform subtraction on the given binary numbers using 1'scomplement methad: (a) 10011 - 10010 (b) 100010 - 100110 Perform subtraction on the given binary numbers using 2's complement method: (a) 1004 - 110104 (b) 101000 - 10104 Subtract using (r ~ 1)'s complement method (MQP "22 - 6M) a) 4456 10) ~ 3423410) Subtract using r’s complement method a) 1010100,2) — 1000100, Write down axiomatic definition of Boolean algebra. (MQP 22 - 6M) Mention the different theorems and postulates of Boolean algebra and prove each of them with truth table, (MQP "22 - 7M) State and prove De Morgan's theorem with its truth table. (MQP "22 - SM) Using basic Boolean theorems, prove (Feb ‘23 - 6M) i) &+y)(x+z) =xtyz ii) xy + x24 972 xz + y2 Simplify the Boolean function to minimum number of literals: (MQP 22 - 6M) Basie Electrontes Question Banke 18, 19, 20. a1. 22. 23. 24, 25. 26. 27. 28. 29. 30. 31. 32. 33. 34, 35. (xy + x'y + yz) Gy + xy +2) + y'2) Simplify the following Boolean functions to minimum number of literals: i) xtx'y ii) x@’ +y) iii) x'y'z + x'yz + xy" iv) xy+x’ztyz v) GHG’ + y#2) Simplify the following: iY = AB + AC + BC LY = (A +B4+B)A+B4+ 0) Y= CB+ (A+ B40) Find the complement of the functions Fl and F2 Fy = x'yz' +x’y'z Fy = xyz! + yz) Minimize the following function a) F(xy,z) = xytx'z + yz Find the complement of the function F1 and F2 FlQcy,z) = x'ye' +x’ F2(x,y,2) = x(y'2! + yz’) Express the Boolean function i) F=A + BC in asum of minterms form ii) F = xy x ina product of maxterms form Express the Boolean function F= A+B ’C in asum of minterms. Express the Boolean function F = A + BCinasum of minterms. Express the Boolean function F = xy + x'z in a product of maxterms. Express the Boolean function F = XY + XZ ina product of maxterms. Explain SOP & POS with examples. Explain all the logic gates with the symbols and truth tables. Describe how NAND and NOR gates can be used as universal gates. Write the step-by-step procedure to design a combinational circuit. Implement half adder using basic gates. With the help of truth table, explain half adder. (MQP 22 - 6M) (QP 22 - 7M) (Feb ‘23 - 8M) (MQP ‘22 - 6M) (MQP "22 - 6M) (MQP 22 - 6M) (MQP ‘22 - 8M) (Feb '23 - 6M) (MQP "22 - 6M) With the help of truth table explain the operation of full adder with its circuit diagram and reduce the expression for sum and carry. Describe the working of the full adder using basic gates. With the help of truth table, explain full adder using logic gates. (MQP ‘22 - 7M) (MQP "22 - 8M) (Aug '22 - 6M, Feb '22 - 8M, MQP ‘21 - 5M) Question Bank Basic Electranics 36. Implement full adder using two half adders and one OR gate. Write the equations for Sum and Cou. (Feb '23 - 8M) 37. Design a full adder using two half adders and an OR-gate. (MQP ‘21 - 8M) Module -5 Introduction to Transducers 1. Explain the working of the potentiometric resistive transducer, (MQP "22 - 8M) 2. Explain potentiometric type transducer. (MQP ‘22 - 6M) 3. What are the two types of strain gauges? Explain with neat diagrams. 4. Astrain gauge with gauge factor of 2 is subject toa 0.28 mm strain. The wire dimensions are 50 cm length and 30 ym diameter, and unstrained wire resistance is 55 0. Calculate the change in wire resistance and diameter if the entire length of the wire is strained positively. (MQP ‘22 - 7M) 5. Astrain gauge with a40 cm wire length and a 25 jm wire diameter has a resistance of 2500. and a gauge factor of 2.5. Calculate the change in wire length and diameter when the resistance change is measured as 0.5.0. Assume that the complete length of wire is strained positively. 6. With a neat diagram, explain the working of a variable reluctance transducer. 7. The coil in a variable reluctance transducer has a 1 mH inductance when the total air gap length is 1 mm. Calculate the inductance change when the air gap is reduced by 0.2 mm. (Feb "23 -4M) 8, Describe the working ofa linear variable differential transducer (LVDT) witha neat diagram. (Feb 23 - 8M, MQP '22 - 8M) 9. A50 mV outputis produced by an LVDT when the core displacement is 10 mm from its zero position. Calculate the core displacement when the output is 35 mV. 10. An LVDT with 0.5 V/mm sensitivity has its output amplified by a factor of 50 and applied to ameter which can display a minimum of 1 mV. Calculate the overall sensitivity of thesystem, and determine the minimum detectable core displacement. 11. Explain the working principle of capacitive transducer. (QP °22 - 8M) 12. A parallel plate capacitive transducer has a plate area (1.x w) = (40mm x 40mm) and plate spacing d = 0.5mm, Calculate the device capacitance and displacement that causes the capacitance to change by 5 pF. Also determine the transducer sensitivity. (M@QP ‘22 - 5M) 13. A capacitive transducer is constructed of two half-disc plates. The plates are 2 mm apart, and each has an area of 1.4 x 1073 m?. Calculate the maximum capacitance, and the transducer sensitivity in pF/degree. 14, Write a note on: (i) Capacitive displacement transducer (ii) Capacitive pressure transducer 15. Briefly explain with diagram of a resistance thermometer. (Feb 23 - 4M) Basic Electronics Question Banke 16. a7. 18, 19, 20. 21. 22. 23. 24, 25. 26. 27. The resistance of a coil of nickel wire is 25 © at 20 °C This rises to 37 2 when the coil has been submerged in a liquid for some time, Calculate the temperature of the liquid, Aresistance thermometer has a temperature coefficient of 0.0039 at 20 °Cand a resistance of 130. Calculate the temperature when its resistance measures 175 0. Write a note on thermistor. Write down the applications of thermal transducer. (MQP ‘22 = 4M) Write a note on: (i) Thermocouple (ii) Semiconductor temperature sensor Explain the working of a photoconductive cell. Write a note on photodiodes. (MQP ‘22 - 6M) With a neat diagram explain the operation of a photomultiplier. With neat diagram, explain the operation of a piezoelectric transducer. (Feb ‘23 - 8M, MQP ‘22 - 6M) Explain the working principle and applications of piezoelectric transducer. (MQP ‘22 - 8M) A piezoelectric transducer has plate dimensions of S mm x 4 mm, The crystal material has a3 mm thickness and a relative permittivity of 800. The voltage sensitivity is 0.04 Vm/N. Calculate the transducer charge sensitivity, the charge, and the output voltage when the applied force is 8 N. A piezoelectric transducer has plate dimensions of 5 mm «4 mm. The crystal material has. a 3mm thickness and a relative permittivity of 800. The voltage sensitivity is 0.04 Vm/N. Calculate the transducer charge sensitivity, the charge, and the output voltage when the applied force is 8 N. Communications 1. Explain the various blocks involved in communication block diagram. (Feb 23 - 8M) 2. Describe the blocks of the basic communication system. (MQP "22 - 7M) 3. Explain the various blocks involved in an electrical communication system.{MQP ‘22 - 6M) 4. Explain typical radio transmitter with neat block diagram. (MQP "22 - 6M) 5. What is noise? Explain the term Channel Noise and its effects, (MQP "22 - 6M) 6. Describe with diagram of an AM superheterodyne receiver, explain each block. (Feb ‘23 - 8M) 7. Define modulation. Explain the need for modulation. (MQP ’22 - 8M, 7M, 6M)

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