Lecture 2
Lecture 2
Course Teacher
Dr. Monir Morshed
Professor, Dept. of ICT
Email:[email protected]
Semiconductor Diode & Its
Applications
PN-Junction and Depletion Region
When a p-type materials are combined with n-type materials, a pn junction
forms and a semiconductor diode is created.
When the pn junction is formed, the n region loses a free electron as they
diffuse across the junction and combines with a hole, a positive charge is left in
the n region and a negative charge is created in the p region, forming a barrier
potential. This region of uncovered positive and negative ions is called the
depletion region due to the “depletion” of free carriers in the region.
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The diode
A diode is a silicon or germanium semiconductor material in which half is
doped as a p region and half is doped as an n region with a pn junction and
depletion region in between.
Forward Bias (Vd>0)
• A forward-bias or “on” condition is established by applying the positive
potential to the p -type material and the negative potential to the n -type
material.
• Vbias must be greater than ‘barrier potential’.
Reverse Bias (Vd<0)
• An external potential of V volts is applied across the p – n junction such
that the positive terminal is connected to the n -type material and the
negative terminal is connected to the p -type material.
• Reverse bias is a condition that prevents current through junction.
• Depletion region get wider with this configuration,
Diode Equation
In general, characteristics of a semiconductor diode can be defined by the
following equation, referred to as Shockley’s equation, for the forward- and
reverse-bias regions: