15EE53 POWER ELECTRONICS

UNIT-1
Module 1 INTRODUCTION
Structure

1.0 Introduction
1.1 Objectives
1.2 Power Electronics Applications
1.3 Power Semiconductor devices
1.4 Control Characteristics Of power Devices
1.5 Types Of Power Converters
1.6 Periphral Effects
1.7 Power Diodes
1.8 Reverse recovery characteristics
1.9 Rectifiers
1.10 Assignment Questions
1.11 Outcomes
1.12 Further Readings

1.0 INTRODUCTION TO POWER ELECTRONICS

Power Electronics is a field which combines Power (electric power), Electronics and
Control systems.
Power engineering deals with the static and rotating power equipment for the generation,
transmission and distribution of electric power.
Electronics deals with the study of solid state semiconductor power devices and circuits for
Power conversion to meet the desired control objectives (to control the output voltage and
output power).
Power electronics may be defined as the subject of applications of solid state power
semiconductor devices (Thyristors) for the control and conversion of electric power.

1.1 Objectives:

 To give an overview of applications power electronics, different types of power

semiconductor devices, their switching characteristics.
 To explain power diode characteristics, types, their operation and the effects of
power diodes on RL circuits.
 To explain the techniques for design and analysis of single phase diode rectifier
circuits.

1.2 Power Electronic Applications

1. COMMERCIAL APPLICATIONS
Heating Systems Ventilating, Air Conditioners, Central Refrigeration, Lighting,
Computers and Office equipments, Uninterruptible Power Supplies (UPS), Elevators, and

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2. AEROSPACE APPLICATIONS
Space shuttle power supply systems, satellite power systems, aircraft power systems.
3. TELECOMMUNICATIONS
Battery chargers, power supplies (DC and UPS), mobile cell phone battery chargers.
4. TRANSPORTATION
Traction control of electric vehicles, battery chargers for electric vehicles, electric
locomotives, street cars, trolley buses, automobile electronics including engine controls.

1.3 POWER SEMICONDUCTOR DEVICES

The power semiconductor devices are used as on/off switches in power control circuit. These
devices are classified as follows.

A. POWER DIODES

Power diodes are made of silicon p-n junction with two terminals, anode and cathode.
Diode is forward biased when anode is made positive with respect to the cathode. Diode
conducts fully when the diode voltage is more than the cut-in voltage (0.7 V for Si).
Conducting diode will have a small voltage drop across it.

Diode is reverse biased when cathode is made positive with respect to anode. When reverse
biased, a small reverse current known as leakage current flows. This leakage current
increases with increase in magnitude of reverse voltage until avalanche voltage is reached
(breakdown voltage).

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Fig.1.1 V-I Characteristics of diode.

POWER DIODES TYPES
Power diodes can be classified as
1. General purpose diodes.
2. High speed (fast recovery) diodes.
3. Schottky diode.
General Purpose Diodes
The diodes have high reverse recovery time of about 25 microsecs ( sec). They are
used in low speed (frequency) applications. e.g., line commutated converters, diode rectifiers
and converters for a low input frequency upto 1 KHz. Diode ratings cover a very wide range
with current ratings less than 1 A to several thousand amps (2000 A) and with voltage ratings
from 50 V to 5 KV. These diodes are generally manufactured by diffusion process. Alloyed
type rectifier diodes are used in welding power supplies. They are most cost effective and
rugged and their ratings can go upto 300A and 1KV.
Fast Recovery Diodes
The diodes have low recovery time, generally less than 5 s. The major field of
applications is in electrical power conversion i.e., in free-wheeling ac-dc and dc-ac converter
circuits. Their current ratings is from less than 1 A to hundreds of amperes with voltage
ratings from 50 V to about 3 KV. Use of fast recovery diodes are preferable for free-wheeling
in SCR circuits because of low recovery loss, lower junction temperature and reduced di dt .
For high voltage ratings greater than 400 V they are manufactured by diffusion process and
the recovery time is controlled by platinum or gold diffusion. For less than 400 V rating
epitaxial diodes provide faster switching speeds than diffused diodes. Epitaxial diodes have a
very narrow base width resulting in a fast recovery time of about 50 ns.
Schottky Diodes
A Schottky diode has metal (aluminium) and semi-conductor junction. A layer of
metal is deposited on a thin epitaxial layer of the n-type silicon. In Schottky diode there is a
larger barrier for electron flow from metal to semi-conductor. Figure shows the schotty diode.

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When Schottky diode is forward biased free electrons on n-side gain enough energy to flow
into the metal causing forward current. Since the metal does not have any holes there is no
charge storage, decreasing the recovery time. Therefore a Schottky diode can switch-off
faster than an ordinary p-n junction diode. A Schottky diode has a relatively low forward
voltage drop and reverse recovery losses. The leakage current is higher than a p-n junction
diode. The maximum allowable voltage is about 100 V. Current ratings vary from about 1 to
300 A. They are mostly used in low voltage and high current dc power supplies. The
operating frequency may be as high 100-300 kHz as the device is suitable for high frequency
application.
Comparison Between Different Types Of Diodes

General Purpose Diodes Fast Recovery Diodes Schottky Diodes

Upto 5000V & 3500A Upto 3000V and 1000A Upto 100V and 300A
Reverse recovery time – Reverse recovery time – Reverse recovery time –
High Low Extremely low.
Turn off time - High Turn off time - Low Turn off time – Extremely
Low
Switching frequency – Switching frequency – Switching frequency –
Low High Very high.
VF = 0.7V to 1.2V VF = 0.8V to 1.5V VF ≈ 0.4V to 0.6V

B. Thyristors
Silicon Controlled Rectifiers (SCR):
The SCR has 3- terminals namely:
Anode (A), Cathode (k) and Gate(G).
Internally it is having 4-layers p-n-p-n as shown in figure (b).

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Fig.1.2 (a). Symbol Fig.1.2 (b). Structure of SCR

The word thyristor is coined from thyratron and transistor. It was invented in the year 1957 at
Bell Labs.
The Thyristors can be subdivided into different types
Forced-commutated Thyristors (Inverter grade Thyristors)
Line-commutated Thyristors (converter-grade Thyristors)
Gate-turn off Thyristors (GTO).
Reverse conducting Thyristors (RCT’s).
Static Induction Thyristors (SITH).
Gate assisted turn-off Thyristors (GATT).
Light activated silicon controlled rectifier (LASCR) or Photo SCR’s.
MOS-Controlled Thyristors (MCT’s).

C. POWER TRANSISTORS

Transistors which have high voltage and high current rating are called power
transistors. Power transistors used as switching elements, are operated in saturation region
resulting in a low - on state voltage drop. Switching speed of transistors is much higher than
the thyristors. And they are extensively used in dc-dc and dc-ac converters with inverse
parallel connected diodes to provide bi-directional current flow. However, voltage and
current ratings of power transistor are much lower than the thyristors. Transistors are used in
low to medium power applications. Transistors are current controlled device and to keep it in
the conducting state, a continuous base current is required.
Power transistors are classified as follows
Bi-Polar Junction Transistors (BJTs)
Metal-Oxide Semi-Conductor Field Effect Transistors (MOSFETs)
Insulated Gate Bi-Polar Transistors (IGBTs)

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Static Induction Transistors (SITs)

1.4 CONTROL CHARACTERISTICS OF POWER DEVICES

The power semiconductor devices are used as switches. Depending on power requirements,
ratings, fastness & control circuits for different devices can be selected. The required output
is obtained by varying conduction time of these switching devices.

Control characteristics of Thyristors:

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Fig1.3: Control Characteristics of Power Switching Devices

Classification of power semiconductor devices:

Uncontrolled turn on and turn off (e.g.: diode).

Controlled turn on and uncontrolled turn off (e.g. SCR)

Controlled turn on and off characteristics (e.g. BJT, MOSFET, GTO, SITH,
IGBT, SIT, MCT).

Continuous gate signal requirement (e.g. BJT, MOSFET, IGBT, SIT).

Pulse gate requirement (e.g. SCR, GTO, MCT).

Bipolar voltage withstanding capability (e.g. SCR, GTO).

Unipolar voltage withstanding capability (e.g. BJT, MOSFET, GTO, IGBT,

MCT).

Bidirectional current capability (e.g.: Triac, RCT).

Unidirectional current capability (e.g. SCR, GTO, BJT, MOSFET, MCT,

IGBT, SITH, SIT & Diode).

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1.5 Types of Power Converters or Types of Power Electronic Circuits

For the control of electric power supplied to the load or the equipment/machinery or
for power conditioning the conversion of electric power from one form to other is necessary
and the switching characteristic of power semiconductor devices (Thyristors) facilitate these
conversions.
The thyristorised power converters are referred to as the static power converters and
they perform the function of power conversion by converting the available input power
supply in to output power of desired form.
The different types of thyristor power converters are
Diode rectifiers (uncontrolled rectifiers).
Line commutated converters or AC to DC converters (controlled rectifiers)
AC voltage (RMS voltage) controllers (AC to AC converters).
Cyclo converters (AC to AC converters at low output frequency).
DC choppers (DC to DC converters).
Inverters (DC to AC converters).

1. AC TO DC Converters (Rectifiers)

+
AC Line DC Output
Input Commutated V0(QC)
Voltage Converter
-

These are AC to DC converters. The line commutated converters are AC to DC power

converters. These are also referred to as controlled rectifiers. The line commutated converters
(controlled rectifiers) are used to convert a fixed voltage, fixed frequency AC power supply
to obtain a variable DC output voltage. They use natural or AC line commutation of the
Thyristors.

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Fig1.4: A Single Phase Full Wave Uncontrolled Rectifier Circuit (Diode Full Wave Rectifier) using a
Center Tapped Transformer

Fig: 1.5 A Single Phase Full Wave Controlled Rectifier Circuit (using SCRs) using a Center Tapped
Transformer

Different types of line commutated AC to DC converters circuits are

Diode rectifiers – Uncontrolled Rectifiers
Controlled rectifiers using SCR’s.
o Single phase controlled rectifier.
o Three phase controlled rectifiers.
Applications of Ac To Dc Converters
AC to DC power converters are widely used in
Speed control of DC motor in DC drives.

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UPS.
HVDC transmission.
Battery Chargers.

2. a. AC TO AC Converters or AC regulators.

V0(RMS)
AC Vs AC Variable AC
Input Voltage RMSO/P Voltage
Voltage fs Controller
fs fS

The AC voltage controllers convert the constant frequency, fixed voltage AC supply into
variable AC voltage at the same frequency using line commutation.
AC regulators (RMS voltage controllers) are mainly used for
Speed control of AC motor.
Speed control of fans (domestic and industrial fans).
AC pumps.

Fig.1.6: A Single Phase AC voltage Controller Circuit (AC-AC Converter using a TRIAC)

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2. b. AC TO AC Converters with Low Output Frequency or CYCLO CONVERTERS

V0 , f0
AC Vs Variable Frequency
Cyclo
Input AC Output
Voltage Converters
fs
f0< fS

The cyclo converters convert power from a fixed voltage fixed frequency AC supply to a
variable frequency and variable AC voltage at the output.
The cyclo converters generally produce output AC voltage at a lower output frequency. That
is output frequency of the AC output is less than input AC supply frequency.
Applications of cyclo converters are traction vehicles and gearless rotary kilns.

3. CHOPPERS or DC TO DC Converters

+ V0(dc)
+
DC Variable DC
Vs
Chopper Output Voltage
-
-

The choppers are power circuits which obtain power from a fixed voltage DC supply and
convert it into a variable DC voltage. They are also called as DC choppers or DC to DC
converters. Choppers employ forced commutation to turn off the Thyristors. DC choppers are
further classified into several types depending on the direction of power flow and the type of
commutation. DC choppers are widely used in
Speed control of DC motors from a DC supply.
DC drives for sub-urban traction.
Switching power supplies.

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Fig.1.7: A DC Chopper Circuit (DC-DC Converter) using IGBT

4. INVERTERS or DC TO AC Converters

+ Inverter
DC AC
Supply (Forced Output Voltage
- Commutation)

The inverters are used for converting DC power from a fixed voltage DC supply into an AC
output voltage of variable frequency and fixed or variable output AC voltage. The inverters
also employ force commutation method to turn off the Thyristors.
Applications of inverters are in
Industrial AC drives using induction and synchronous motors.
Uninterrupted power supplies (UPS system) used for computers, computer labs.

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Fig.1.8: Single Phase DC-AC Converter (Inverter) using MOSFETS

1.6 Peripheral Effects

The power converter operations are based mainly on the switching of power
semiconductor devices and as a result the power converters introduce current and voltage
harmonics (unwanted AC signal components) into the supply system and on the output of the
converters.

Fig.1.9: A General Power Converter System

These induced harmonics can cause problems of distortion of the output voltage, harmonic
generation into the supply system, and interference with the communication and signaling
circuits. It is normally necessary to introduce filters on the input side and output side of a
power converter system so as to reduce the harmonic level to an acceptable magnitude. The
figure below shows the block diagram of a generalized power converter with filters added.
The application of power electronics to supply the sensitive electronic loads poses a
challenge on the power quality issues and raises the problems and concerns to be resolved by
the researchers. The input and output quantities of power converters could be either AC or
DC. Factors such as total harmonic distortion (THD), displacement factor or harmonic factor

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(HF), and input power factor (IPF), are measures of the quality of the waveforms. To
determine these factors it is required to find the harmonic content of the waveforms. To
evaluate the performance of a converter, the input and output voltages/currents of a converter
are expressed in Fourier series. The quality of a power converter is judged by the quality of
its voltage and current waveforms.

The control strategy for the power converters plays an important part on the harmonic
generation and the output waveform distortion and can be aimed to minimize or reduce these
problems. The power converters can cause radio frequency interference due to
electromagnetic radiation and the gating circuits may generate erroneous signals. This
interference can be avoided by proper grounding and shielding.

1.7POWER DIODES
Introduction : Power diodes are made of silicon p-n junction with two terminals, anode and
cathode. Diode is forward biased when anode is made positive with respect to the cathode.
Diode conducts fully when the diode voltage is more than the cut-in voltage (0.7 V for Si).
Conducting diode will have a small voltage drop across it. Diode is reverse biased when cathode
is made positive with respect to anode. When reverse biased, a small reverse current known as
leakage current flows. This leakage current increases with increase in magnitude of reverse
voltage until avalanche voltage is reached (breakdown voltage).
Fig shows V-I Characteristics of diode.

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Forward Voltage Drop:

Is the forward-conducting junction level

The forward voltage drop is due to the forward resistance of the junction.
forward volt drop is across the junction

Reverse Leakage Current:

Thermal agitation does break some of the bonds in the crystal, resulting in minority carriers,
Which permit a small reverse current flow, i.e. leakage current.

1.8 Reverse Recovery Characteristics

When a diode is in forward conduction mode, a sudden reversal of the polarity of the applied
voltage would not stop the diode current at once. But the diode continues to conduct in the
opposite direction due to minority carriers that remain stored in pn-junction and the bulk
semiconductor material. Fig.2 shows the effect of minority carriers on the turn off characteristics
of the power diode.

The charge carriers (holes & electrons) require a certain time to recombine with opposite n
charges and to be neutralized; this time is called the reverse recovery time trr of the diode.
From Fig.2, one can found the following relationships:

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For Fast recovery :

Hence,

The fast decay of negative current creates an inductive drop that adds with the reverse blocking
voltage VR as illustrate in Fig.3.There are two types of reverse recovery characteristics of
junction diodes: Soft recovery and Fast recovery where, the softness factor, SF is the ratio of
t2/t3.

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Hence, the blocking voltage across the diode increases to: where, Vrr is reverse

recovery voltage due to the fast decay in the negativecurrent and equal to:

Based on the diode reverse recovery characteristics power diode are classified into:
► Standard Recovery (General) Diodes
► Fast Recovery Diodes
► Schottky Diodes
► Silicon Carbide Diodes.
For high frequency rectifier applications, Fast recovery and Schottky Diodes are generally used
because of their short reverse recovery time and low voltage drop in their forward bias condition

General Purpose Diodes

The diodes have high reverse recovery time of about 25 microsecs (μsec). They are used in low
speed (frequency) applications. e.g., line commutated converters, diode rectifiers and converters
for a low input frequency upto 1 KHz. Diode ratings cover a very wide range with current
ratings less than 1 A to several thousand amps (2000 A) and with voltage ratings from 50 V to 5
KV. These diodes are generally manufactured by diffusion process. Alloyed type rectifier diodes
are used in welding power supplies. They are most cost effective and rugged and their ratings
can go up to 300A and 1KV.
Fast Recovery Diodes:
The diodes have low recovery time, generally less than 5μs. The major field of applications is in
electrical power conversion i.e., in free-wheeling ac-dc and dc-ac converter circuits. Their
current ratings is from less than 1 A to hundreds of amperes with voltage ratings from 50 V to
about 3 KV. Use of fast recovery diodes are preferable for freewheeling in SCR circuits because
of low recovery loss, lower junction temperature and reduced di/dt. For high voltage ratings
greater than 400V they are manufactured by diffusion process and the recovery time is controlled
by platinum or gold diffusion. For less than 400 V rating epitaxial diodes provide faster
switching speeds than diffused diodes. Epitaxial diodes have a very narrow base width resulting
in a fast recovery time of about 50 ns.

Schottky Diodes :
A Schottky diode has metal (aluminium) and semi-conductor junction. A layer of metal is
deposited on a thin epitaxial layer of the n-type silicon. In Schottky diode there is a larger barrier
for electron flow from metal to semi-conductor. Figure shows the Schottky diode.

When Schottky diode is forward biased free electrons on n-side gain enough energy to flow into

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the metal causing forward current. Since the metal does not have any holes there is no charge
storage, decreasing the recovery time. Therefore, a Schottky diode can switch-off faster than an
ordinary p-n junction diode. A Schottky diode has a relatively low forward voltage drop and
reverse recovery losses. The leakage current is higher than a p-n junction diode. The maximum
allowable voltage is about 100 V. Current ratings vary from about 1 to 300 A. They are mostly
used in low voltage and high current dc power supplies. The operating frequency may be as high
100-300 kHz as the device is suitable for high frequency application.

Silicon Carbide SiC Schottky Barrier Diode (SBD)

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C).
Compared to Si, SiC has
 Ten times the dielectric breakdown field strength.
 Three times the bandgap.
 Three times the thermal conductivity.

Both p-type and n-type regions, which are necessary to fashion device structures in a
semiconductor materials, can be formed in SiC. These properties make SiC an attractive material
from which to manufacture power devices that can far exceed the performance of their Si
counterparts. SiC devices can withstand higher breakdown voltage, have lower resistivity, and
can operate at higher temperature. SiC SBDs (Schottky barrier diodes) with breakdown voltage
from 600V (which far exceeds the upper limit for silicon SBDs) and up are readily available.
Compared to silicon FRDs (fast recovery diodes),
 SiC SBDs have much lower reverse recovery current and recovery time, hence
dramatically lower recovery loss and noise emission. Furthermore, unlike silicon FRDs,
these characteristics do not change significantly over current and operating temperature
ranges.
 SiC SBDs allow system designers to improve efficiency, lower cost and size of heat sink,
increasing switching frequency to reduce size of magnetics and its cost, etc.

SiC-SBDs have similar threshold voltage as Si- FRDs, i.e., a little less than 1V.

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Reverse recovery characteristics of SiC-SBD

Si fast P-N junction diodes (e.g. FRDs: fast recovery diodes) have high transient current at the
moment the junction voltage switches from the forward to the reverse direction, resulting in
significant switching loss. This is due to minority carriers stored in the drift layer during
conduction phase when forward voltage is applied. The higher the forward current (or
temperature), the longer the recovery time and the larger the recovery current.

In contrast, since SiC-SBDs are majority carrier (unipolar) devices that use no minority carriers
for electrical conduction, they do not store minority carrier s. The reverse recovery current in SiC
SBDs is only to discharge junction capacitance. Thus the switching loss is substantially lower
compared to that in Si-FRDs. The transient current is nearly independent of temperatures and
forward currents, and thereby achieves stable fast recovery in any environment. This also means
SiC-SBDs generate less noise from the recovery current.
A typical comparison between different types of diodes is shown in the table below:

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 1.10 DIODE RECTIFIER
Rectifier are used to convert A.C to D.C supply.

Rectifiers can be classified as single phase rectifier and three phase rectifier. Single phase
rectifier are classified as 1-Փ half wave and 1-Փ full wave rectifier. Three phase rectifier are
classified as 3-Փ half wave rectifier and 3-Փ full wave rectifier. 1-Փ Full wave rectifier are
classified as1-Փ mid point type and 1-Փ bridge type rectifier. 1-Փ bridge type rectifier are
classified as 1-Փ half controlled and 1-Փ full controlled rectifier. 3-Փ full wave rectifier are
again classified as 3-Փ mid point type and 3-Փ bridge type rectifier. 3-Փ bridge type rectifier
are again divided as 3-Փ half controlled rectifier and 3-Փ full controlled rectifier.

Single phase half wave circuit with R-L load

Output current 𝑖𝑜 rises gradually. After some time 𝑖𝑜 reaches a maximum value and then
begins to decrease.

At π, 𝑣𝑜 =0 but 𝑖𝑜 is not zero because of the load inductance L. After π interval SCR is reverse
biased but load current is not less then the holding current.

At β>π, 𝑖𝑜 reduces to zero and SCR is turned off.

At 2π+β SCR triggers again

α is the firing angle.

β is the extinction angle.

v      conduction angle

Analysis for 𝑉𝑇 .

At 𝜔𝑡 = 𝐼,𝑉𝑇 = 𝑉𝑚 𝑠𝑖𝑛𝐼

During = 𝐼 𝑡𝑜 𝐼 , 𝑉𝑇 = 0;

When = 𝐼 , 𝑉𝑇 = 𝑉𝑚 𝑠𝑖𝑛𝐼;

di0
Vm sin t  Ri0  L
dt

Vm
is  sin( t   )
R  X2
2

Where,

X
  tan 1
R

X  L

Where 𝐼 is the angle by which 𝐼𝑠 lags 𝑉𝑠 .

The transient component can be obtained as

di0
Rit  L 0
dt

So 𝑖𝑡 = 𝐴𝑒 −(𝑅𝑡⁄𝐿)

𝑖0 = 𝑖𝑠 + 𝑖𝑡

𝑉𝑚
sin( 𝜔𝑡 − 𝐼) + 𝐴𝑒 −(𝑅𝑡⁄𝐿)
𝑧

Where 𝑧 = √𝑅 2 + 𝑋 2

At 𝛼 = 𝜔𝑡, 𝑖𝑜 = 0;
𝑉𝑚
0= sin( 𝛼 − 𝐼) + 𝐴𝑒 −(𝑅𝛼⁄𝐿𝜔) ;
𝑧

−𝑉𝑚
𝐴= sin( 𝛼 − 𝐼)𝑒 (𝑅𝛼⁄𝐿𝜔)
𝑧
𝑉𝑚 𝑉𝑚
𝑖𝑜 = sin( 𝜔𝑡 − 𝐼) − sin( 𝛼 − 𝐼)𝑒 −𝑅(𝜔𝑡−𝛼)⁄𝐿𝜔
𝑧 𝑧
Therefore,

𝜔𝑡 = 𝛽, 𝑖0 = 0;

So sin(𝛽 − 𝛼) = sin(𝛼 − 𝐼)𝑒 −(𝛽−𝛼)/(𝜔𝐿)

β can obtained from the above equation.

The average load voltage can be given by


1
2 
V0  Vm sin td (t )

𝑉𝑚
(cos(𝛼) − cos(𝛽))
2𝜋

Average load current

Vm
I0  (cos   cos  )
2 R

Single phase full converter

 
1
V0 
 V

m sin(t )d (t )

2Vm
 cos 

T₁,T₂ triggered at α and π radian latter T₃, T₄ are triggered.
Single phase half wave circuit with RLE load

The minimum value of firing angle is

Vm sin(t )  E

So,

E
1  sin 1
Vm

Maximum value of firing angle

2    2

The voltage differential equation is

di0
Vm sin(t )  Ri0  L E
dt

is  is1  is 2

Due to source volt

Vm
is1  sin(t   )
Z

Due to DC counter emf

is 2  ( E / R)

it  Ae ( R / L )t

Thus the total current is given by

is1  is 2  it

Vm E
 sin(t   )   Ae (R/L) t
Z R

Vm E
is 0  sin(t   )   Ae (R/L) t
Z R

At t    i0  0

E Vm
A [  sin(   )]e R  L
R Z
So

R R
Vm { (t  )} E { (t  
i0  [sin(t   )  sin(   )e L
 [1  e L
]
Z R
Average voltage across the inductance is zero. Average value of load current is

1 

2 R 
I0  (Vm sin t  E ) d(t )

1
 [Vm (cos   cos        )]
2 R

Conduction angle     

   v

1
I0  [Vm (cos   cos(  v)    v)]
2 R

A B A B
cos A  cosB  2sin sin
2 2

So

1 v v
I0  [2Vm sin(  )sin  E. ]
2 R 2 2
  E  I0 R

1 v v
 E [2Vm sin(  )sin  E. ]
2 2 2

v V v v
 E(1  )  [ m sin(  )sin ]
2  2 2

If load inductance L is zero then

  2

And
v      2  

But
2    1

So
  2    1

v    1  
And

So average current will be

1
I0  [Vm (cos   cos(  1 ))  E (  1   )]
2 R

So V0=E+I0R

Vm E  
 (cos   cos 1 )  (1  1 )
2 2 
For no inductance rms value of load current

1  
I0  [  (Vm sin(t )  E ) 2 d t ]1/2
2 R 2

Power delivered to load

P  I or2 R  I 0 E

Supply power factor

I or2 R  I 0 E
Pf 
Vs I or

Single phase full wave converter:

 1  
V0 
  Vm sin(t )d (t )

2Vm
 sin 


Single phase semi converter:

1 
V0 
  V m sin(t )d (t )

Vm
 cos 


full converter:
steady state analysis

di0
Vs  Rio  L E
dt

V0  RI 0  E

2Vm
V0  cos 


So in case of DC motor load

V0  ra I a   mm

2Vm
cos   ra I a
m  
So
m

T  m Ia

Te
 Ia 
m

Te
Ia 
Put
m

2Vm
( ) cos 
m   
raTe
So
m  m2
15EE53 POWER ELECTRONICS

1.7 Recommended questions:

1. State important applications of power electronics

2. What is a static power converter? Name the different types of power converters and
mention their functions.
3. Give the list of power electronic circuits of different input / output requirements.
4. What are the peripheral effects of power electronic equipments? What are the remedies
for them?
5. What are the peripheral effects of power electronic equipments? What are the remedies
for them?

1.8 Generic Skills / Outcomes:

To get an overview of power electronics and its history of development.

Various applications of power converters such as UPS, Inverters, DC motor
control.

1.9 Further Redaing

1. http://books.google.co.in/books/about/Power_Electronics.html?id=-WqvjxMXClAC
2. http://www.flipkart.com/power-electronic-2ed/p/itmczynuyqnbvzzj
3. http://www.scribd.com/doc/36550374/Power-Electronics-Notes
4. http://elearning.vtu.ac.in/EC42.html
5. http://www.onlinevideolecture.com/electrical-engineering/nptel-iit-bombay/power-
electronics/?course_id=510

DEPT OF EEE, ATMECE