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Gan Simulation Results

The document describes simulation code for a GaN transistor structure. It defines the geometry of the structure through rectangles of different materials. It then defines ohmic doping, constant doping profiles for different regions, reference evaluation windows, and mesh refinement placements. Finally, it specifies the device model, including electrodes, material physics models, plots, solver settings, and simulation procedure.

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39 views7 pages

Gan Simulation Results

The document describes simulation code for a GaN transistor structure. It defines the geometry of the structure through rectangles of different materials. It then defines ohmic doping, constant doping profiles for different regions, reference evaluation windows, and mesh refinement placements. Finally, it specifies the device model, including electrodes, material physics models, plots, solver settings, and simulation procedure.

Uploaded by

f20212516
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Gan Simulation Results

Sde code

; define structure
(sdegeo:create-rectangle (position 0 0 0) (position 12 5 0) "Silicon" "substrate")
(sdegeo:create-rectangle (position 0 5 0) (position 12 5.02 0) "AlN" "region_2")
(sdegeo:create-rectangle (position 0 5.02 0) (position 12 7.02 0) "GaN" "buffer")
(sdegeo:create-rectangle (position 0 7.02 0) (position 12 7.07 0) "AlGaN" "algan")
(sdegeo:create-rectangle (position 4 7.07 0) (position 6 8.07 0) "GaN" "gate")
(sdegeo:create-rectangle (position 1.5 7.07 0) (position 4 8.07 0) "Si3N4" "pass1")
(sdegeo:create-rectangle (position 6 7.07 0) (position 10.5 8.07 0) "Si3N4" "pass2")

(sdegeo:create-rectangle (position 0 7.07 0) (position 1.5 8.07 0) "GaN" "source" )


(sdegeo:create-rectangle (position 10.5 7.07 0) (position 12 8.07 0)"GaN" "drain" )

(sdegeo:define-contact-set "s" 4 (color:rgb 1 0 0 ) "##")


(sdegeo:define-contact-set "d" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:define-contact-set "g" 4 (color:rgb 1 0 0 ) "##")

(sdegeo:set-current-contact-set "g")
"none"
(sdegeo:set-contact-edges (list (car (find-edge-id (position 5 8.07 0)))) "g")

(sdegeo:set-current-contact-set "s") "g"


(sdegeo:set-contact-edges (list (car (find-edge-id (position 0.75 8.07 0)))) "s")

(sdegeo:set-current-contact-set "d") "s"


(sdegeo:set-contact-edges (list (car (find-edge-id (position 11.25 8.07 0)))) "d")
(render:rebuild)

; define ohmic doping---------------------------------------------------------------------------


(sdedr:define-refeval-window "Pl.ohmic.d" "Rectangle" (position 10.5 7.07 0)
(position 12 8.07 0))
(sdedr:define-constant-profile "Ohmic" "ArsenicActiveConcentration" 5e+20)
(sdedr:define-constant-profile-placement "Ohmic.d" "Ohmic" "Pl.ohmic.d")
(sdedr:define-refeval-window "Pl.ohmic.s" "Rectangle" (position 0 7.07 0) (position
1.5 8.07 0))
(sdedr:define-constant-profile "Ohmic" "ArsenicActiveConcentration" 5e+20)
(sdedr:define-constant-profile-placement "Ohmic.s" "Ohmic" "Pl.ohmic.s")

;define constant doping---------------------------------------------------------------------------


(sdedr:define-constant-profile "silicon" "BoronActiveConcentration" 1e+14)
(sdedr:define-constant-profile-region "silicon doping" "silicon" "substrate")

(sdedr:define-constant-profile "gan" "ArsenicActiveConcentration" 1e+15)


(sdedr:define-constant-profile-region "gan buffer dop" "gan" "buffer")

(sdedr:define-constant-profile "algan" "PhosphorusActiveConcentration" 5e16)


(sdedr:define-constant-profile-region "algan dop" "algan" "algan")

(sdedr:define-constant-profile "gate" "BoronActiveConcentration" 1e+16)


(sdedr:define-constant-profile-region "gate" "gate" "gate")

;define ref eval windows------------------------------------------------------------------------


(sdedr:define-refeval-window "silicon" "Rectangle" (position 0 0 0) (position 12 5 0))
(sdedr:define-refeval-window "aln" "Rectangle" (position 0 5 0) (position 12 5.02 0))

(sdedr:define-refeval-window "gan1" "Rectangle" (position 0 5.02 0) (position 12


6.92 0))
(sdedr:define-refeval-window "gan2" "Rectangle" (position 0 6.92 0) (position 12
7.02 0))
(sdedr:define-refeval-window "algan" "Rectangle" (position 0 7.02 0) (position 12
7.07 0))

;define meshing -------------------------------------------------------------------------------


(sdedr:define-refinement-size "RefinementDefinition_1-sil" 0.5 0.5 0.5 0.1 0.1 0.1 )
(sdedr:define-refinement-placement "RefinementPlacement_1-sil"
"RefinementDefinition_1-sil" (list "window" "silicon" ) )

(sdedr:define-refinement-size "RefinementDefinition_1-algan" 0.002 99 0.001 66 )


(sdedr:define-refinement-placement "RefinementPlacement_1-algan"
"RefinementDefinition_1-algan" (list "window" "algan" ) )
(sdedr:define-refinement-size "RefinementDefinition_1-gan-1" 0.5 0.5 0.5 0.1 0.1
0.1 )
(sdedr:define-refinement-placement "RefinementPlacement_1-gan-1"
"RefinementDefinition_1-gan-1" (list "window" "gan1" ) )

(sdedr:define-refinement-size "RefinementDefinition_1-gan-2" 0.3 0.3 0.3 0.1 0.3


0.1 )
(sdedr:define-refinement-placement "RefinementPlacement_1-gan-2"
"RefinementDefinition_1-gan-2" (list "window" "gan2" ) )

(sdedr:define-refinement-size "RefinementDefinition_1-aln" 0.9 0.9 0.9 0.5 0.5 0.5 )


(sdedr:define-refinement-placement "RefinementPlacement_1-aln"
"RefinementDefinition_1-aln" (list "window" "aln" ) )
Sdevice model
File{
Grid = "sdemodel_msh.tdr"
Plot = "n1_des.tdr"
Current = "n2_des.plt"
Output = "n3_des.log"
}

Electrode{
{ Name="s" Voltage=0.0}
{ Name="d" Voltage=0.7}
{ Name="g" Voltage=0.0}
}

Physics(Material="Silicon"){
Fermi
EffectiveIntrinsicDensity(OldSlotboom)
Mobility(
PhuMob
Enormal
eHighFieldsat(CarrierTempDrive)
hHighFieldsat(GradQuasiFermi)
* thin_layer_mobility
)

Recombination(
SRH(DopingDependence)
eAvalanche(CarrierTempDrive)
hAvalanche(CarrierTempDrive)
)

Plot{
eDensity hDensity eCurrent hCurrent
Potential SpaceCharge ElectricField
eMobility hMobility eVelocity hVelocity
Doping DonorConcentration AcceptorConcentration
}

Math{
Extrapolate
RelErrControl
-CheckUndefinedModels
}
Solve{
Poisson
Coupled { Poisson Electron }
Quasistationary ( MaxStep=0.05
Goal{ Name="g" Voltage=2 } )
{ Coupled { Poisson Electron } }
}

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