The AO3400A is a 30V N-channel MOSFET that provides low RDS(ON) of 27 mΩ and high current capability of 5.2A, making it suitable for small power switching and load switch applications. It meets RoHS and Green Product requirements with full reliability approval. Key features include a super low gate charge, excellent suppression of drain-source voltage overshoot, and an advanced high density trench technology.
The AO3400A is a 30V N-channel MOSFET that provides low RDS(ON) of 27 mΩ and high current capability of 5.2A, making it suitable for small power switching and load switch applications. It meets RoHS and Green Product requirements with full reliability approval. Key features include a super low gate charge, excellent suppression of drain-source voltage overshoot, and an advanced high density trench technology.
The AO3400A is a 30V N-channel MOSFET that provides low RDS(ON) of 27 mΩ and high current capability of 5.2A, making it suitable for small power switching and load switch applications. It meets RoHS and Green Product requirements with full reliability approval. Key features include a super low gate charge, excellent suppression of drain-source voltage overshoot, and an advanced high density trench technology.
The AO3400A is a 30V N-channel MOSFET that provides low RDS(ON) of 27 mΩ and high current capability of 5.2A, making it suitable for small power switching and load switch applications. It meets RoHS and Green Product requirements with full reliability approval. Key features include a super low gate charge, excellent suppression of drain-source voltage overshoot, and an advanced high density trench technology.
The AO3400A is the high cell density trenched N- VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 mΩ and load switch applications. The AO3400A meet the RoHS and Green Product ID 5.2 A requirement with full function reliability approved.
SOT23 Pin Configuration
⚫ Green Device Available ⚫ Super Low Gate Charge ⚫ Excellent Cdv/dt effect decline ⚫ Advanced high cell density Trench technology
Absolute Maximum Ratings
Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V1 5.2 A ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V1 4.6 A IDM Pulsed Drain Current2 20 A PD@TA=25℃ Total Power Dissipation3 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃
IS Continuous Source Current1,4 --- --- 5.2 A VG=VD=0V , Force Current ISM Pulsed Source Current2,4 --- --- 20 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time --- 6.8 --- nS Qrr Reverse Recovery Charge IF=3A , dI/dt=100A/µs , TJ=25℃ --- 2.3 --- nC
Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation.
www.hs-semi.cn 2 AO3400A N-Ch 30V Fast Switching MOSFETs Typical Characteristics 16 55 ID=3A VGS=5V 14 VGS=4.5V 50 ID Drain Current (A)
