Scribd
Upload
34 views2 pages

ss9013 Sam

This document provides specifications for an NPN epitaxial silicon transistor, the SS9013, that is suitable for use in 1W output amplifiers in class B push-pull operation in portable radios. It has a high total power dissipation of 625mW and can handle a high collector current of 500mA. It is complementary to the SS9012 transistor. The document provides maximum ratings, electrical characteristics, and hFE classification for the transistor.

Uploaded by

Roni Pasla
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
34 views2 pages

ss9013 Sam

This document provides specifications for an NPN epitaxial silicon transistor, the SS9013, that is suitable for use in 1W output amplifiers in class B push-pull operation in portable radios. It has a high total power dissipation of 625mW and can handle a high collector current of 500mA. It is complementary to the SS9012 transistor. The document provides maximum ratings, electrical characteristics, and hFE classification for the transistor.

Uploaded by

Roni Pasla
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

SS9013 NPN EPITAXIAL SILICON TRANSISTOR

1W OUTPUT AMPLIFIER OF POTABLE


TO-92
RADIOS IN CLASS
B PUSH-PULL OPERATION.
• High total power dissipation. (PT=625mW)
• High Collector Current. (IC=500mA)
• Complementary to SS9012
• Excelent hFE linearity.

ABSOLUTE MAXIMUM RATINGS (TA=25 Î)


Characteristic Symbol Rating Unit

Collector-Base Voltage VCBO 40 V


Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 500 mA

Î
Collector Dissipation PC 625 mW

Î
Junction Temperature TJ 150
Storage Temperature T STG -55 ~ 150
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (TA=25 Î)


Characteristic Symbol Test Conditions Min Typ Max Unit

Collector-Base Breakdown Voltage BVCBO À


IC =100 , IE =0 40 V

À
Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB =0 20 V
Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 5 V
Collector Cut-off Current ICBO VCB =25V, IE =0 100 nA
Emitter Cut-off Current IEBO VEB =3V, IC =0 100 nA
DC Current Gain hFE1 VCE =1V, IC =50mA 64 120 202
hFE2 VCE =1V, IC =500mA 40 120
Collector-Emitter Saturation Voltage VCE (sat) IC =500mA, IB =50mA 0.16 0.6 V
Base-Emitter Saturation Voltage VBE (sat) IC =500mA, IB =50mA 0.91 1.2 V
Base-Emitter On Voltage VBE (on) VCE =1V, IC =10mA 0.6 0.67 0.7 V

hFE CLASSIFICATION

Classification D E F G H

hFE(1) 64-91 78-112 96-135 112-166 144-202


SS9013 NPN EPITAXIAL SILICON TRANSISTOR

You might also like