Bipolar Junction Transistor

(BJT)
Tanaji Biradar
Associate Head
Electronics and Telecommunication Engineering
department
Dwarkadas J. Sanghvi College of Engineering

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 Link
• https://web.microsoftstream.com/video/a202
efb3-59ce-40e7-b1ca-48356b3f73f1

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Syllabus

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 1. Bipolar Junction Transistor (6)

• DC analysis of common BJT circuits:

• Analysis and design of voltage divider bias,
• Stability factor analysis.
• Small Signal Mid Frequency Models:
• Hybrid-pi model,
• early effect,
• h-parameter model.

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 2. BJT CE Amplifier (10)

• Small Signal Amplifier Analysis:

• Graphical analysis to evaluate parameters,
• Small signal analysis of Common Emitter configurations using hybrid-pi
model.
• Darlington emitter follower (CC-CC).
• Low frequency and high frequency response amplifier.
• Design of single stage CE amplifier.
• Power Devices:
• Construction, Operation, and V-I Characteristics of Silicon Controlled
Rectifier (SCR),
• DIAC, and Triac.

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 3.Introduction to MOSFET(10)

• Introduction to MOSFET:
• Symbol,
• Types of MOSFET - Depletion and Enhancement type MOSFET (N channel
and P channel),
• Construction, Operation, and V-I characteristics of MOSFET.
• MOSFET biasing,
• MOSFET as a switch,
• MOSFET as amplifier.

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 4.Power Amplifiers(8)

Power amplifier :
• Introduction to power amplifier,
• Need of power amplifier and
• Harmonic distortion.
• Power efficiency of class A, B, AB and C amplifier.

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 5.Feedback amplifiers and oscillators(8)

• Concepts of Feedback:
• Concept of negative Feedback, voltage / current, series, Shunt feedback.
Positive feedback.
• Introduction to Oscillator:
• Introduction, Operation of oscillator. Types of Transistor oscillators.
• RC oscillators: Phase shift and Wein bridge.
• LC Oscillators: Hartley, Colpitt’s and Clapp.
• Tuned Oscillator: Twin-T oscillator and crystal oscillator.

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 Course Objectives and Outcomes
Objectives: Outcomes:
1. To understand operation of After successful completion of the
semiconductor devices. course student will be able to:
2. To understand DC analysis and AC 1. Understand the current voltage
models of semiconductor devices. characteristics of semiconductor
devices,
3. To apply concepts for the design of 2. Analyze dc circuits and relate ac
Amplifiers models of semiconductor devices
4. To verify the theoretical concepts with their physical Operation.
through laboratory and simulation 3. Design and analyze of amplifier
experiments. circuits.
5. To implement mini projects based 4. Evaluate frequency response to
on concept of electronics circuit understand behavior of Electronics
concepts. circuits.

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Formation of BJT From P-N Diode
P N N P

W W +
+ - -
Vappl > 0 Vappl < 0

Forward bias, + on P, - on N Reverse bias, + on N, - on P

(Shrink W, Vbi) (Expand W, Vbi)

Allow holes to jump over barrier Remove holes and electrons away
into N region as minority carriers from depletion region

I I

V
V
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So if we combine these by fusing their
terminals…

P N N P

W W +
+ - -
Vappl > 0 Vappl < 0

Holes from P region (“Emitter”) of 1st PN junction

driven by FB of 1st PN junction into central N region (“Base”)
Driven by RB of 2nd PN junction from Base into P region of
2nd junction (“Collector”)
• 1st region FB, 2nd RB
• If we want to worry about holes alone, need P+ on 1st region
• For holes to be removed by collector, base region must be
thin
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 Bipolar Junction Transistor(BJT)
• It is an electronic component mainly used for amplification and
switching purpose.
• As the name suggests, it is composed of two junctions called
emitter-base junction and collector-base
• A transistor is a semiconductor device, comes with three
terminals (Emitter, Base & Collector) that are used for external
connection with electronic circuits
• Transistor = Trans+ Resistor
• BJT is called a current controlled device where small current at
the base side is used to control the large current at other
terminals.
• It is a bipolar device where conduction is carried out by both
charge carriers i.e. electrons and holes.
• BJT comes in two types called NPN transistor and PNP transistor.

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 Bipolar Junction Transistor
• Structure of BJT: All three terminals of the BJT are different in
terms of their doping concentrations.

• The emitter is highly doped as compared to base and collector.

• The collector is moderately doped and its area is larger as compared to
emitter area, allowing it to handle more power.
• As the base is very thin and lightly doped it cannot hold the number of
electrons for too much time, allowing the electrons to diffuse from base
to collector.
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Bipolar Junction Transistors: Basics

Constructional diagram of BJT :

+ -

IE IC
- + IB

Symbol of BJT :
IE = IB + IC
VEC = VEB + VBC

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 Equivalent Circuit of BJT Using Diode

• BJT Using Diode

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 Region of operations of BJT

Bias Mode E-B Junction C-B Junction Applications

Active Forward Reverse Amplifier
Saturation Forward Forward ‘ON’ Switch
Cutoff Reverse Reverse ‘OFF’ Switch
Inverted Reverse Forward Not used

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 BJT configurations

• There are three ways to connect this device with external

electronic circuits called: Common Base Configuration,
Common Collector Configuration. Common Emitter
Configuration
• The nature of the current being controlled at the output is
different for different configurations.

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BJT Working Principle:

The behavior of the NPN-transistor is

determined by its two PN-junctions:

• The FB base-emitter (BE) PN-junction allows the majority charge carriers, the
electrons, in N-type emitter to go through the PN-junction to arrive at the P-type
base, forming the emitter current .
• As the base is thin and lightly doped, only a small number of the electrons from
the emitter (e.g., 1%) are combined with the majority carriers, the holes, in the P-
type base to form the base current . The percentage depends on the doping and
geometry of the material.
• Most of the electrons from the emitter (e.g., 99%), now the minority carriers in
the P-type base, can go through the reverse biased collector-base PN junction to
arrive at the N-type collector forming the collector current .
• Therefore ,
IE = IC + IB 18
 Common Base Configuration
I/P Between Emitter & Base, O/P Between Collector & Base

Here, IC = IC(INJ)+ICBO

Current Amplification Factor(αdc)

IC(INJ)
αdc =
IE
• For CB Configuration is always < 1 ,Because IC(INJ) < IE
• αdc ranges between 0.95 to 0.995
• Thickness of base increases then αdc also increases.???

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 Common Base Configuration
• IC(INJ) = αdc . IE
• Therefore, IC = αdc . IE + ICBO -------------------(1)
But, ICBO is negligible
• Therefore, IC ≈ αdc . IE IC
• Thus Current Amplification Factor, αdc =
IE
• And we know that, IE = IC + IB --------------(3)

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 Input Characteristics of CB
IE
(mA)
VCB=8V
VCB=0V

ΔIE

VBE (V)
ΔVBE

• Graph of input current ( IE ) v/s input voltage ( VBE ) at a constant output voltage ( VCB )
• Identical to forward V-I characteristics of P-N junction diode.
• Current IE increases slightly with increase in output voltage VCB due to Early Effect

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 Output Characteristics of CB

ΔVCB
Output Resistance ro = , IE Constant ΔIC
ΔIC
αdc = =1
ΔIE
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= 1/Slope
Characteristics of CE
Current Relation in CE:
I/p is given to Base & O/P is taken from
IC Collector. Therefore, IC =fun (IB)
In CE output current is ,
VCC + IC = I(Maj)+ I(Mino)
_
+ IB We Have, IE = IC + IB ---------------------------(1)
VBB _ and for CB ,IC = αdc . IE + ICBO ------------(2)
IE
From equation (1) and (2) eliminate (IE ) and
write equation for IC .

So, IC = αdc .(IC + IB ) + ICBO

IC (1- αdc ) = αdc IB + ICBO
IC = [αdc /(1- αdc )] IB +[1/(1- αdc )] ICBO

1 αdc
IC = IB + ICBO
1 - αdc 1 - αdc
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 Characteristics of CE
1 αdc
IC = IB + ICBO
1 - αdc 1 - αdc

αdc
Let βdc = 1
1 - αdc , Then (1+β) = 1 - αdc
IC = βdc IB + ( 1 + βdc ) ICBO
IC = βdc IB + ICEO
Where, ( ICEO ) Reverse Leakage Current in CE
ICEO = ( 1 + βdc ) ICBO

αdc IC
and βdc = = Current Amplification factor
1 - αdc IB

Note:
• βdc >>> 1.
• Hence ICEO >>> ICBO
• ICEO increases with increase in temperature.
• Thermal stability is needed in CE Configuration.
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 Input Characteristics of CE
• Input characteristic is a graph of input current ( IB ) v/s input voltage ( VBE ) at a output
voltage ( VCE ) is constant.

• Current IB decreases slightly with increase in output voltage VCE because CB junction is
more reverse bias
ΔVBE 1
Input Resistance ri = =
ΔIB Slope 25
Output Characteristics of CE

ΔVCE
• Output Resistance rO = , IB Constant
ΔIC
• It is the reciprocal of slope of output characteristics.
• rO is very small because ΔIC is very large for small value of ΔVCE.
Δ IC
• Current gain of CE configuration: βdc = , VCE Constant
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Δ IB
 Output Characteristics of CE
• Conclusion:
• In active region output current IC is controlled by input current IB.
• When VCE has very low value, the transistor is said to be saturated and it
operates in Saturation region of characteristics. In this region, the change in IB
does not produce a corresponding change in collector current IC.
• In cutoff region , a small amount of collector current flows even when base
current IB=o. This is called ICEO. Since main collector current is zero, the
transistor is said to be cutoff.
• When VCE is very large, CB junction completely breaks down and collector
current increases rapidly and junction breaks.
• Input impedance of CE configuration is large (Moderate).
• Current gain is Large
• Output impedance is large (moderate).
• Note: Silicon transistor have much less leakage current as compared to
germanium transistors, we prefer silicon transistors.(Silicon Controlled
Rectifier (SCR) )

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Common Collector Configuration
• In CC output current is ,
• IE = I(Maj)+I(Mino)
• We Have, IE = IC + IB ---------------------------(1)
• and for CB , IC = αdc . IE + ICBO ------------(2)
• In CC IE =fun(IB)
• From equation (1) and (2) eliminate (IC ) and write equation for IC .

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 Amplifier & Buffer

Amplifier Buffer
Parameters Ideal Value Ideal Value
Input Resistance (Ri) ∞ ∞
Output Resistance (Ro) 0 o
Current Gain (Ai) ∞ 1
Voltage Gain (Av) ∞ --

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 Comparison Of BJT Configuration
Parameter CB CE CC
Common terminal Base Emitter Collector
between input &
output
Input Current IE IE IB
Output Current IC IC IE
Current Gain αdc = IC / IB βdc = IC / IB γ = IE / IB = ( 1 + βdc )

Input Voltage VEB VBE VBC

Output Voltage VCB VCE VEC
Voltage Gain Medium Medium Less then 1
Input Resistance Very Low ( 20Ω ) Low ( 1 KΩ ) High ( 500 KΩ )
Output Resistance Very High ( 1 MΩ ) High ( 40 KΩ ) Low ( 50Ω )

Applications As Preamplifier As Audio Amplifier Buffer

(HF Amplifier) (AF Amplifier) (For Impedance
Matching) 30
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