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Lecture10 - MOSFET

The document discusses the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It describes the Enhancement MOSFET (E-MOSFET) which only operates in enhancement mode and has no depletion mode. It requires a gate voltage above the threshold value to induce a channel and allow current flow. The document also discusses the Depletion MOSFET (D-MOSFET) which can operate in either depletion or enhancement mode using negative or positive gate voltages respectively. Transfer characteristics of both devices are presented showing current variations with gate-source voltage.

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37 views18 pages

Lecture10 - MOSFET

The document discusses the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It describes the Enhancement MOSFET (E-MOSFET) which only operates in enhancement mode and has no depletion mode. It requires a gate voltage above the threshold value to induce a channel and allow current flow. The document also discusses the Depletion MOSFET (D-MOSFET) which can operate in either depletion or enhancement mode using negative or positive gate voltages respectively. Transfer characteristics of both devices are presented showing current variations with gate-source voltage.

Uploaded by

ahmedgamal7856320
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Lecture 10

Metal Oxide- semiconductor


Field Effect Transistor
(MOSFET)
Electronics MTE121
Ref.: Electronic devices Thomas L. Floyd.
MOSFET
(Metal oxide semiconductor
field-effect transistor) • For an n-channel device, a positive
gate voltage above a threshold
value induces a channel by creating
a thin layer of negative charges in
the substrate region adjacent to
the SiO2 layer.
• The conductivity of the channel is
enhanced by increasing the gate-
to-source voltage and thus pulling
more electrons into the channel
area.
• Enhancement mode and depletion
mode.
E-MOSFET
Structure & symbol
• The Enhancement-MOSFET (E-
MOSFET) operates only in the
enhancement mode and has no
depletion mode.
• No structural channel.
• For any gate voltage below the
threshold value, there is no channel.
• Negligible gate current

N-channel MOSFET (nmos)


E-MOSFET
(Enhancement-MOSFET)
• The Enhancement-MOSFET (E-
MOSFET) operates only in the
enhancement mode and has no
depletion mode.
• No structural channel.
• For any gate voltage below the
threshold value, there is no channel.
• Negligible gate current
E-MOSFET Transfer Characteristic
• NMOS device requires a positive gate-to-source voltage, and a p-
channel device requires a negative gate-to-source voltage.
• No drain current when VGS=0.
• When VGS reaches a certain nonzero value called the threshold
voltage, VGS(th) current flow
E-MOSFET Transfer Characteristic
• NMOS device requires a positive gate-to-source voltage, and a p-
channel device requires a negative gate-to-source voltage.
• No drain current when VGS=0.
• When VGS reaches a certain nonzero value called the threshold
voltage, VGS(th) current flow
Example 3

Sol.
E-MOSFET Bias
• Because E-MOSFETs must have a VGS greater than the threshold value,
VGS(th), zero bias cannot be used
E-MOSFET Bias (Voltage-divider bias)

VDS
VGS IDS
E-MOSFET Bias (Drain-feedback bias)
• No voltage drop across RG

VDS
VGS IDS

ID= K (VDS-VGS(th))2

ID= (VDD – VDS)/RD


Example 4

• Sol.

VDS
VGS IDS
Example 4

• Sol.
Example 4

• Sol.
Example 4

• Sol.

VDS
VGS IDS
Example 5

• Sol.

VDS
IDS
Depletion MOSFET (D-MOSFET)
• Another type of MOSFET is the depletion MOSFET
(D-MOSFET).
• The drain and source are diffused into the substrate
material and then connected by a narrow channel
adjacent to the insulated gate.
• The D-MOSFET can be operated in either of the
depletion mode or the enhancement mode.
• Since the gate is insulated from the channel, either
a positive or a negative gate voltage can be applied.
• The n-channel MOSFET operates in the depletion
mode when a negative gate-to-source voltage is
applied and in the enhancement mode when a
positive gate-to-source voltage is applied. These
devices are generally operated in the depletion
mode
D-MOSFET Transfer Characteristic
• the D-MOSFET can operate with either
positive or negative gate voltages.
• The point on the curves where VGS= 0
corresponds to IDSS
• The point where ID=0 corresponds to
VGS(off)
Example 6

• Sol.

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