This document provides information on the 2SC2655 NPN silicon transistor from Unisonic Technologies Co., Ltd. including:
- It is intended for use in power amplifier and switching applications.
- Key features are a low saturation voltage of 0.5V max and high-speed switching time of 1.0μs typical.
- It provides ordering information, marking diagrams, maximum ratings, thermal and electrical characteristics, and typical performance curves.
- Packaging includes SOT-23, SOT-89, TO-252, and TO-92NL and it is available in lead free and halogen free options.
This document provides information on the 2SC2655 NPN silicon transistor from Unisonic Technologies Co., Ltd. including:
- It is intended for use in power amplifier and switching applications.
- Key features are a low saturation voltage of 0.5V max and high-speed switching time of 1.0μs typical.
- It provides ordering information, marking diagrams, maximum ratings, thermal and electrical characteristics, and typical performance curves.
- Packaging includes SOT-23, SOT-89, TO-252, and TO-92NL and it is available in lead free and halogen free options.
This document provides information on the 2SC2655 NPN silicon transistor from Unisonic Technologies Co., Ltd. including:
- It is intended for use in power amplifier and switching applications.
- Key features are a low saturation voltage of 0.5V max and high-speed switching time of 1.0μs typical.
- It provides ordering information, marking diagrams, maximum ratings, thermal and electrical characteristics, and typical performance curves.
- Packaging includes SOT-23, SOT-89, TO-252, and TO-92NL and it is available in lead free and halogen free options.
This document provides information on the 2SC2655 NPN silicon transistor from Unisonic Technologies Co., Ltd. including:
- It is intended for use in power amplifier and switching applications.
- Key features are a low saturation voltage of 0.5V max and high-speed switching time of 1.0μs typical.
- It provides ordering information, marking diagrams, maximum ratings, thermal and electrical characteristics, and typical performance curves.
- Packaging includes SOT-23, SOT-89, TO-252, and TO-92NL and it is available in lead free and halogen free options.
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: TSTG=1.0μs (Typ.)
ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2655L-x-AB3-R 2SC2655G-x-AB3-R SOT-89 B C E Tape Reel 2SC2655L-x-AE3-R 2SC2655G-x-AE3-R SOT-23 B E C Tape Reel 2SC2655L-x-TN3-R 2SC2655G-x-TN3-R TO-252 B C E Tape Reel 2SC2655L-x-T9N-B 2SC2655G-x-T9N-B TO-92NL E C B Tape Box 2SC2655L-x-T9N-K 2SC2655G-x-T9N-K TO-92NL E C B Bulk Note: Pin Assignment: B: Base C: Collector E: Emitter
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 2 A Collector Current (Pulse) (Note 2) ICP 3 A Base Current IB 0.5 A SOT-23 350 mW SOT-89 500 mW Collector Power Dissipation PC TO-252 1000 mW TO-92NL 900 mW Junction Temperature TJ +150 °C Operating Temperature TOPR -40 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≦16ms, Duty Cycle≦50%.
THERMAL DATA PARAMETER SYMBOL RATINGS UNIT SOT-23 417 SOT-89 250 Junction to Ambient θJA °C/W TO-252 75 TO-92NL 125 SOT-23 208.3 SOT-89 156.3 Junction to Case θJC °C/W TO-252 12.5 TO-92NL 83.3 Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Base Breakdown Voltage BVCBO IC= 10μA, IE= 0 50 V Collector to Emitter Breakdown BVCEO IC= 10mA, IB= 0 50 V Voltage Emitter to Base Breakdown Voltage BVEBO IE= 10μA, IC= 0 5 V Collector Cut-off Current ICBO VCB=50V, IE= 0 1.0 μA Emitter Cut-off Current IEBO VEB= 5V, IC=0 1.0 μA hFE1 VCE=2V, IC=0.5A 70 240 DC Current Gain hFE2 VCE=2V, IC=1.5A 40 Collector-Emitter Saturation Voltage VCE(SAT) IC=1A, IB=0.05A 0.5 V Base- Emitter Saturation Voltage VBE(SAT) IC=1A, IB=0.05A 1.2 V Transition Frequency fT VCE=2V, IC=0.5A 100 MHz Collector Output Capacitance COB VCB= 10V, IE= 0, f=1MHz 30 pF
Switching Time(Turn-on Time) tON 0.1 μS
IB1= -IB2=0.05A DUTY CYCLE≦1%
UNISONIC TECHNOLOGIES CO., LTD 2 of 5
www.unisonic.com.tw QW-R211-013.K 2SC2655 NPN SILICON TRANSISTOR CLASSIFICATION OF hFE1 RANK O Y RANGE 70-140 120-240
UNISONIC TECHNOLOGIES CO., LTD 3 of 5
www.unisonic.com.tw QW-R211-013.K DC Current Gain, hFE Collector -Emitter Voltage, VcE (V) Collector Current, Ic (A) 2SC2655
4 of 5 QW-R211-013.K 2SC2655 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS (Cont.) Base Emitter Saturation
Collector Current, Ic (A)
Voltage, VBE(SAT)
Collector Power Dissipation, Pc (mW)
Collector Current, Ic(A)
M AX
Collector Current-Ic(mA) . (C
Ic INU O N O U S)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
