Scribd
Upload
14 views1 page

FAQ Physics 2020 148

This document discusses the forward and reverse biasing of a p-n junction diode. It defines key terms like depletion region, potential barrier, and minority carrier injection. It explains how the width of the depletion region changes under forward and reverse bias. The document also includes circuit diagrams and explanations of the voltage-current (V-I) characteristics of a p-n junction diode under forward and reverse bias. It notes that in forward bias, current increases rapidly above the threshold voltage, while in reverse bias the current remains low until reaching the breakdown voltage.

Uploaded by

paninikumar0000
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
14 views1 page

FAQ Physics 2020 148

This document discusses the forward and reverse biasing of a p-n junction diode. It defines key terms like depletion region, potential barrier, and minority carrier injection. It explains how the width of the depletion region changes under forward and reverse bias. The document also includes circuit diagrams and explanations of the voltage-current (V-I) characteristics of a p-n junction diode under forward and reverse bias. It notes that in forward bias, current increases rapidly above the threshold voltage, while in reverse bias the current remains low until reaching the breakdown voltage.

Uploaded by

paninikumar0000
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

PHYSICS CLASS-XII –SEMICONDUCTOR REVISION AISSCE-2020

936. What is meant by forward and reverse biasing of a p-n junction ? Draw the circuit diagram of a forward and
reverse biasing of a p-n junction. CBSE (AIC)-2010
[Ans. (i) Forward biasing :
When the positive terminal of external
battery is connected to p-side and negative
terminal to the n-side, then the p-n junction
is said to be forward biased
=====================================================================
(ii) Reverse biasing :
When the positive terminal of external
battery is connected to n-side and negative
terminal to the p-side, then the p-n junction
is said to be reverse biased
937. Describe briefly: (i) ‘minority carrier injection’ in forward bias (ii) ‘Breakdown voltage’ in reverse bias. CBSE (AI)-2015
[Ans. (i) Minority carrier injection in forward bias :
During forward bias, electrons from n-side cross the junction and reach p-side. (where they are minority carries).
Similarly, holes from p-side cross the junction and reach the n-side (where they are minority carries). This
process is known as minority carrier injection
(ii) Breakdown voltage in reverse bias : At very high reverse voltage, the current suddenly increases and becomes
independent of applied voltage. This critical voltage is called breakdown voltage
938. Define the terms ‘depletion region’ and ‘potential barrier’ in a p-n junction. Explain how the width of depletion region in a p-n
junction diode change, when the junction is- (i) forward biased (ii) reverse biased. CBSE (AI)-2016,2011,2010,2002
[Ans. Depletion region : The small space charge region on either side of the p-n junction which becomes depleted from
mobile charge carriers. is known as depletion region
Potential barrier : The potential difference developed across the p-n junction due to diffusion of majority charge
carriers, which prevents the further movement of these charge carriers through it, is called
potential barrier
(i) Width of depletion region decreases in forward bias
Reason : In the forward bias, external battery pushes the majority charge carriers towards the junction.
(ii) Width of depletion region increases in reverse bias
Reason : In the reverse bias, external battery attracts the majority charge carriers away from the junction.
939. Draw the circuit diagram for studying the V-I characteristics of a p-n junction diode in (i) forward bias and (ii) reverse bias.
Draw the typical V-I characteristics of a silicon diode. SE (AI)-2015,2014,2013,2010,2009,(D)-2014
[ Ans. V-I characteristics : A graph showing the variation of current through a p-n junction with the voltage applied
across it, is called the voltage – current (V-I) characteristics of that p-n junction.

For different values of voltages, the value of the current is noted. A graph between V and I is obtained as in fig.
This V-I graph shows that -
(i) At a certain forward bias voltage, current increases rapidly showing the linear variation. This voltage is known as
knee voltage or threshold voltage or cut-in voltage.
(ii) The ratio of change in forward voltage to the change in forward current is called dynamic resistance (rd)
i,e, rd = Ω
(iii) Under reverse bias, the current is very small (~μA) and remains almost constant. However, when reverse bias
voltage reaches a high value, reverse current suddenly increases. This voltage is called Zener breakdown voltage.

SUNEEL KUMAR VISHWAKARMA PGT(PHYSICS) KV1 AFS CHAKERI KANPUR [email protected]

You might also like