Notes
Notes
Cl- Cl-
initial geometry O2-impurity resulting geometry
Non Stoichiometric compound
Linear (1d) defects in
crystals:
Dislocations
Creep Diffusion
Crystal Growth
Fracture Fatigue
(Pipe)
(Screw dislocation)
Slip
Structural
Incoherent Twin
Grain boundary
(low angle)
Semicoherent Interfaces
Disc of vacancies
~ edge dislocation and more…!!
Note: Structural dislocations can play a role in deformation and kinetic processes
Dislocation can be
considered as a boundary
between the slipped and the
unslipped parts of the crystal
lying over a slip plane*
* this is just a way of visualization and often the slipped and unslipped regions may not be distinguished
Some models of Edge
Dislocation
b
Dislocation
line
Burgers vector b (b)
(a)
Edge, Screw, and Mixed
Dislocations
Mixed
Edge
Screw
Characterization of dislocations
Dislocations can be observed using
• Transmission Electron Microscopy (TEM)
• Scanning Tunnelling Electron Microscopy (STEM)
TEM micrograph
A link having videos of dislocation movements
https://kacherlab.gatech.edu/tools-for-teaching/
slip steps
Planar Defects
• External Surface
• Grain Boundary
• Twin Boundary
• Phase Boundary
• Stacking Fault
• Domain Boundary
• Anti Phase Boundary
Grain Boundary
• Crystals of different orientations meet.
• A single-phase interface, with crystals on each side of the
boundary being identical except in orientation.
Twin Boundary
Essentially a reflection of atom positions across the twin
plane
Twinned structure :
Typical
characteristics –
always parallel lines
are present
Stacking Fault
ABCABCABCA...
ABCABABCA...
"intrinsic stacking fault“
Removal of layer C
ABCABACABCA...
"extrinsic stacking fault“
Insertion of layer A
HRTEM image of defects
HRTEM (high-resolution
TEM) image shows the
atomic structure of planar
defects in thin-film silicon:
• a twin defect
• an intrinsic stacking fault
(ISF)
• an extrinsic stacking fault
(ESF—in which there is an
intervening layer between two
layers slightly shifted from
each other)
Bulk defects
Voids are small regions where there are no atoms,
and can be thought of as clusters of vacancies.
crystallographic planes
Micrograph of
brass (a Cu-Zn alloy)
Optical Microscopy
Grain boundaries...
• are imperfections,
• are more susceptible
to etching,
• may be revealed as
dark lines,
• change in crystal
orientation across
boundary.
Microscopy
Optical resolution : 10-7 m = 0.1 m = 100 nm
For higher resolution need higher frequency
– Electrons
• Wavelengths ca. 3 pm (0.003 nm)
• Atomic resolution possible
• Electron beam focused by magnetic lenses.
Fundamentals of
Plastic Deformation
of Metals
Elastic Deformation vs Plastic Deformation
• Metallic materials may experience two kinds of
deformation: Elastic and Plastic
• Permanent
FCC or BCC: Relatively large number of slip systems (at least 12).
These metals are quite ductile because extensive plastic deformation is
normally possible along the various systems.
HCP metals, having few active slip systems, are normally quite brittle.
Strain Energy
• When metals are plastically deformed, some fraction of
the deformation energy (approximately 5%) is retained
internally; the remainder is dissipated as heat.
300 m
35
Strengthening
Mechanisms
Strengthening Mechanisms :
200 60
0 10 20 30 40 50 0 10 20 30 40 50
wt.% Ni wt.%Ni
-Drawing -Extrusion
Ao
die Ad container die holder
Ao tensile force
force ram billet extrusion Ad
die container die
Percentage Ao Ad
%CW x 100
Cold Work Ao
Examples
Why materials strain harden?
• Dislocation–dislocation strain field
• On the average, dislocation–dislocation strain
interactions are repulsive The motion of a
dislocation is hindered by the presence of other
dislocations.
y Gb / L
50
Precipitation strengthening:
cutting bowing
50 precipitates
no get too big,
40 precipitates i.e. spacing (L)
sy (ksi) too large.
30 precipitates
form and grow y Gb / L
AgeingTime
51
Strengthening Mechanisms :
53
Strengthening through Grain Size Reduction
1 / 2
Hall-Petch Equation: s yield so k y d
54