xCalibrate™ Batch User's Manual

Software Version 2016.2

© 1998-2016 Mentor Graphics Corporation

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 Table of Contents

Chapter 1
Introduction to xCalibrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
xCalibrate Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
xCalibrate Tool Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
xCalibrate Command Line Usage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Syntax Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Chapter 2
MIPT File Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
The MIPT File Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
MIPT File Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Rules for Creating an MIPT File . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
MIPT Syntax Conventions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Keywords . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Units . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Case Sensitivity. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Comments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Use Directive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Encryption. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Hidden Layer Directives . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Calibration Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Chapter 3
MIPT File Elements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Global Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Layer Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Base. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Dielectric. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Conductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Derived . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Poly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Seed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
PCaux . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Diffusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Src_drn . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
li . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Device_li . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Contact . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Via. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
TSV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70

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uBump. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Pad . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Multigate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Substrate Layer Structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Well. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Tap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Process Variation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Thickness Variation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Retargeting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Multiple Width Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Gate Fringe Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Table Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Table Property . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Variable Keywords. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108

Chapter 4
MIPT Keyword Dictionary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
airgap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
author . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
background_dielectric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
bias_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
bot_enclosure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
botthk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
bottom_thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
bulk_min_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
bulk_resistance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
calibration_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
cap_unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
capacitive_only_etch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
channel_er . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
comment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
conductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
cond_type. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
contact . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
contact_width2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
coplanar_min_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
copy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
corner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
damage_eps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
damage_thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
date. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
density_window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
depletion_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
derived . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159

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derived_type. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
device_li. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
device_li_layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
dielectric. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
diel_type. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
diffusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
dim_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
distance_unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
enclosure_down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
enclosure_up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
eps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
equation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
extension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
extra_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
fin_length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
fin_spacing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
fin_thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
fin_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
gate_diffusion_layer_pair . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
gate_oxide_er. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
gate_oxide_side_t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
gate_oxide_top_t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
gate_poly_side_t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
gate_poly_top_t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
gate_to_cont_min_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
gate_to_cont_spacing_min . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
gate_to_LI1_min_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
gate_to_LI2_min_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
gate_to_via_min_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
gate_to_via_spacing_min . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
half_node_scale_factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
height . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210
hidden. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211
hollow_radius. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
ignore_diff_intrinsic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
ignore_diff_to_diff_under_poly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
ignore_endcap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217
ignore_gate_intrinsic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219
ignore_gate_to_diff . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
ignore_gateext_to_diff. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222
ignore_gateext_to_diff_only . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224
ignore_rsd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226
ignore_rsd_intrinsic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228
inductance_unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 229
insulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230
layer_bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232
layer_name. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233

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li . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 234
li_device_model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 238
li_layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
max_area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 241
max_length. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 242
max_rlength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243
max_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 244
max_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 245
measured_from . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 246
measured_to . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 247
metal_fill . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
mid_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
min_length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250
min_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 251
min_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252
mipt_version . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 253
multigate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 254
multigate parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 257
pad . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
parallel_to_gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 262
pcaux . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 263
plate_loading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 268
poly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269
process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 273
property . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 274
radius . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275
ref_layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277
resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 279
resistivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280
resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 281
ronly_layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285
rsd_enclosure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 287
rsd_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 288
rsd_thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 289
r_sheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290
rsh_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 291
seed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 292
seed_layers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 298
spacings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 299
src_drn . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300
src_drn_contact_layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 304
src_drn_layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 305
substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 307
svrf_verbatim . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 309
swslope. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 311
swthk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312
table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 313
table_type. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315
tap. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 316

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tc1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 318
tc2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 319
temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320
thickness. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 321
thickness_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 322
top_enclosure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 323
topthk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 324
trap_style . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 326
trench_contact_extension_length. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 327
trim. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 328
TSV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 329
tsv_model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 331
tsv_radius_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 332
ubump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 334
value. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 336
value_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 338
variable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 339
version . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 340
via. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 341
well. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 345
widths. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 347
zbottom . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 348
ztop. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350

Chapter 5
MIPT File Utilities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 353
Interconnect Technology Format (ITF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 354
ITF Translation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 354
Auxiliary File Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 362
Translating an ITF File to MIPT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 363
Translating an ITF File to MIPT With an Auxiliary File . . . . . . . . . . . . . . . . . . . . . . . . . . 364
iRCX File Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 365
Verifying MIPT Structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 366
Performing the Verification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 366
Stack Viewer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 367
Stack Viewer GUI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 368
Stack Viewer Session Window. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 368
MIPT Editor Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 369
Log Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370
Layers Window. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370
Stack View Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 372
Menus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 374
Toolbar . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 376

Chapter 6
xCalibrate Invocation Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 379
Reference Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 379
Setting the CALIBRE_HOME Environment Variable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 379

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Command Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 380

xcalibrate -exec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 381
xcalibrate -check . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 385
xcalibrate -view. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 387
xcalibrate -version. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 388
xcalibrate -itf2mipt2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 389
xcalibrate -itfmap2svrf . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 390
xcalibrate -ircx2mipt2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 391

Appendix A
Example MIPT 2.0 Files . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 393
Example 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 393
Example 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 397
Glossary
Index
Third-Party Information
End-User License Agreement

8 xCalibrate™ Batch User's Manual, v2016.2

 List of Figures

Figure 1-1. The xCalibrate Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 3-1. Multi-level Substrate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 3-2. Gate to Contact/Via Min Spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 3-3. Raised Source/Drain Parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 3-4. TSV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Figure 3-5. TSV Insulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Figure 3-6. uBump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Figure 3-7. Multigate FinFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Figure 3-8. Chemical Mechanical Polishing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Figure 3-9. Thickness Variations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Figure 3-10. Orientation-based Width Variation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Figure 3-11. Drawn Width and Spacing for Multiple Width Tables . . . . . . . . . . . . . . . . . . . 86
Figure 3-12. Gate to S/D Capacitance of a planar MOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Figure 3-13. Gate to Diffusion Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Figure 4-1. Rectangular Airgap Parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 4-2. Triangular Airgap Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 4-3. Airgap With Thin Conformal Dielectric Layer . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 4-4. Triangular Airgap With Thin Conformal Dielectric Layer. . . . . . . . . . . . . . . . . 122
Figure 4-5. bot_enclosure for TSV Layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Figure 4-6. botthk Parameter for a Spacer Dielectric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Figure 4-7. bottom_thickness Parameter for Contact Layer . . . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 4-8. Coplanar M2 and M3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Figure 4-9. Conductor Over Nonplanar Dielectric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Figure 4-10. contact_width2 Parameter for Seed Layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Figure 4-11. depletion_width for TSV Layers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Figure 4-12. Mask Dielectric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 4-13. Conformal Dielectric. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 4-14. Conformal Dielectric with Negative Top Thickness . . . . . . . . . . . . . . . . . . . . 172
Figure 4-15. Double Conformal Dielectrics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 4-16. RSD_conformal Dielectric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Figure 4-17. Trench Dielectric with Positive Top Thickness . . . . . . . . . . . . . . . . . . . . . . . . 173
Figure 4-18. Trench Dielectric with Negative Top Thickness . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 4-19. Spacer Dielectric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 4-20. Extra_width for Positive Trapezoid Style . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
Figure 4-21. Extra_width for Negative Trapezoid Style . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Figure 4-22. fin_length of the multigate layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Figure 4-23. fin_spacing of the multigate layer top-view . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Figure 4-24. fin_spacing of the multigate layer side-view . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Figure 4-25. fin_thickness of the multigate layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Figure 4-26. fin_width of the multigate layer top-view. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192

xCalibrate™ Batch User's Manual, v2016.2 9

 List of Figures

Figure 4-27. fin_width of the multigate layer side-view . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193

Figure 4-28. gate_oxide_side_t of the multigate layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
Figure 4-29. gate_oxide_top_t of the multigate layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
Figure 4-30. gate_poly_side_t of the multigate layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
Figure 4-31. gate_poly_top_t of the multigate layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
Figure 4-32. height of TSV Layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210
Figure 4-33. hollow_radius for TSV Layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213
Figure 4-34. Ignore_diff_intrinsic Parameter for Seed Layer . . . . . . . . . . . . . . . . . . . . . . . . 214
Figure 4-35. Capacitance for Ignore_diff_to_diff_under_poly Parameter . . . . . . . . . . . . . . 215
Figure 4-36. Capacitance affected by Ignore_endcap Parameter . . . . . . . . . . . . . . . . . . . . . 217
Figure 4-37. Ignore_gate_intrinsic Parameter for Seed Layer. . . . . . . . . . . . . . . . . . . . . . . . 219
Figure 4-38. Capacitance for Ignore_gate_to_diff Parameter . . . . . . . . . . . . . . . . . . . . . . . . 220
Figure 4-39. Capacitance for Ignore_gateext_to_diff Parameter . . . . . . . . . . . . . . . . . . . . . 222
Figure 4-40. Capacitance for Ignore_gateext_to_diff_only Parameter . . . . . . . . . . . . . . . . . 224
Figure 4-41. Capacitance for Ignore_rsd Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226
Figure 4-42. Capacitance for Ignore_rsd_intrinsic Parameter. . . . . . . . . . . . . . . . . . . . . . . . 228
Figure 4-43. Definition of Layer Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232
Figure 4-44. mid_width of ubump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
Figure 4-45. radius for TSV Layers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275
Figure 4-46. Double Conformal Dielectric ref_layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277
Figure 4-47. Trench Dielectric ref_layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278
Figure 4-48. Sidewall Slope. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 311
Figure 4-49. swthk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312
Figure 4-50. top_enclosure of TSV Layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 323
Figure 4-51. Trench Dielectric with Positive topthk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 324
Figure 4-52. Trench Dielectric with Negative topthk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325
Figure 4-53. Conformal Dielectric with Negative topthk . . . . . . . . . . . . . . . . . . . . . . . . . . . 325
Figure 4-54. TSV Radius . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 332
Figure 5-1. Stack Viewer Session Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 368
Figure 5-2. MIPT Editor Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 369
Figure 5-3. Log Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370
Figure 5-4. Layers Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370
Figure 5-5. Selected Layer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 371
Figure 5-6. Hidden Layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 372
Figure 5-7. Stack Viewer Main Window. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 373
Figure 5-8. Planar Dielectric Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 374
Figure 5-9. Stack Viewer Menu Bar . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 374
Figure 5-10. Profile 1 Menu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375
Figure 5-11. Profile 2 Menu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375
Figure 5-12. Master and SDCont Profiles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 376
Figure 5-13. Stack Viewer Toolbar . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 376
Figure A-1. Technology Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 393
Figure A-2. Technology Definition with Trench Dielectrics . . . . . . . . . . . . . . . . . . . . . . . . 398

10 xCalibrate™ Batch User's Manual, v2016.2

 List of Tables

Table 1-1. Syntax Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 2-1. Default Units for MIPT Values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 2-2. Distance Units . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 2-3. Capacitance Units . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 2-4. Inductance Units . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 3-1. Global Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 3-2. Base Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 3-3. Base Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 3-4. Dielectric Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 3-5. Dielectric Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 3-6. Conductor Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 3-7. Conductor Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 3-8. Resistor Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 3-9. Resistor Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 3-10. Ground Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 3-11. Ground Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 3-12. Derived Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 3-13. Derived Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 3-14. Poly Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 3-15. Poly Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 3-16. Seed Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 3-17. Seed Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 3-18. PCaux Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 3-19. PCaux Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Table 3-20. Diffusion Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 3-21. Diffusion Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 3-22. Src_drn Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 3-23. Src_drn Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 3-24. li Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 3-25. li Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 3-26. Device_li Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 3-27. Device_li Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 3-28. Contact Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 3-29. Contact Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 3-30. Via Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 3-31. Via Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 3-32. TSV Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Table 3-33. TSV Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Table 3-34. uBump Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 3-35. uBump Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73

xCalibrate™ Batch User's Manual, v2016.2 11

 List of Tables

Table 3-36. Pad Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

Table 3-37. Pad Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 3-38. Multigate Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 3-39. Multigate Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 3-40. Well Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Table 3-41. Well Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Table 3-42. Substrate Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Table 3-43. Substrate Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Table 3-44. Tap Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 3-45. Tap Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 3-46. Table Keyword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Table 3-47. Table Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 3-48. Available Table Property Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 3-49. Variable Keywords . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 4-1. Layer Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310
Table 5-1. ITF to MIPT Syntax Conversion Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 355

12 xCalibrate™ Batch User's Manual, v2016.2

 Chapter 1
Introduction to xCalibrate

The xCalibrate™ rule file generator automatically creates the necessary capacitance and
resistance rules for accurately extracting parasitic devices.
The following sections provide an overview of the xCalibrate rule file generator:

xCalibrate Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
xCalibrate Tool Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
xCalibrate Command Line Usage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Syntax Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

xCalibrate Overview
xCalibrate™ is a software tool that lets you describe your process technology information and
generate a rule file containing Standard Verification Rule Format (SVRF) capacitance and
resistance statements.
The generated rule files can be included in a larger SVRF rule file for use by the
Calibre® xACT™, Calibre® xRC™, and Calibre® xL tools during parasitic extraction. For
information on SVRF rules, see Standard Verification Rule Format (SVRF) Manual.

The xCalibrate tool automatically creates the necessary capacitance and resistance rules for
accurately extracting parasitic devices. If you are not using rule files supplied by your foundry,
you need to use the xCalibrate tool to set up rule files for use by the Calibre xACT or
Calibre xRC tools.

xCalibrate Tool Flow

Figure 1-1 shows the xCalibrate tool flow and how it leads into the Calibre tool flow.

xCalibrate™ Batch User's Manual, v2016.2 13

Introduction to xCalibrate
xCalibrate Command Line Usage

Figure 1-1. The xCalibrate Flow

xCalibrate Requirements
You must have the following to run the xCalibrate tool:

• You must have an xCalibrate license. If you plan to run other Calibre tools, you must
have licenses for those tools. For licensing information, see the “Licensing: Parasitic
Extraction Products” chapter of the Calibre Administrator’s Guide.
• You must have set the environment variable CALIBRE_HOME to the location of your
Mentor Graphics tree and set any other environment variables you want to use. For
details on the CALIBRE_HOME environment variable, see “Setting the
CALIBRE_HOME Environment Variable” in the Calibre Administrator’s Guide.
• Before running calibration, you must have either a .mipt technology file or a .tm
technology file. The .mipt and .tm files are both process technology files and
functionally equivalent. The advantage of using .mipt files is that they are easier to
produce programmatically. For information on creating .mipt files, refer to “The MIPT
File Format” on page 17.

xCalibrate Command Line Usage

The xCalibrate tool is run in batch mode from a shell command line.

14 xCalibrate™ Batch User's Manual, v2016.2

 Introduction to xCalibrate
Syntax Conventions

The command line usage shown when xCalibrate is entered on the command line is as follows:

Usage
xcalibrate -help

xcalibrate -check {<mipt_techfile> || {-itf [-corner <corner>] <itf_file>

[-aux <aux_file>] [-itfmap <map_file>]}}

xcalibrate -view {<mipt_techfile> || {-itf [-corner <corner>] <itf_file>

[-aux <aux_file>] [-itfmap <map_file>]}}

xcalibrate -check {<mipt_techfile> || {-itf [-corner <corner>] <itf_file>

[-aux <aux_file>] [-itfmap <map_file>]}}

xcalibrate -view {<mipt_techfile> || {-itf [-corner <corner>] <itf_file>

[-aux <aux_file>] [-itfmap <map_file>]}}

xcalibrate -exec
[-turbo [number_of_cpus]]
[-remote host1, host2,...hostN || -remotefile <remotefile>]
[-noheader]
[-tech <techdir>]
[-xact3d [-tcad] || -rperc || -tsv]
[-rulefile <rule_file_name>]
[-retry <n>] [-start start_stage] [-end end_stage]
[-hidden]
{<mipt_techfile> [-corner <corner>] [-aux <aux_file>] ||
{-itf [-corner <corner>] <itf_file>
[-aux <aux_file>] [-itfmap <map_file>]}}

xcalibrate -version

ITF converter usage:

xcalibrate -itf2mipt2 [-corner <corner>] <itf_file> [-aux <aux_file>]
[-itfmap <map_file>]

xcalibrate -itfmap2svrf <map_file>

IRCX converter usage:

xcalibrate -ircx2mipt2 <ircx_file>

For more information on the xCalibrate tool flow, refer to the process shown in Figure 1-1.

For more information on the xCalibrate command line syntax, refer to “xCalibrate Invocation
Reference” on page 379.

Syntax Conventions
The command descriptions use font properties and several metacharacters to document the
command syntax.

xCalibrate™ Batch User's Manual, v2016.2 15

Introduction to xCalibrate
Syntax Conventions

Table 1-1. Syntax Conventions

Convention Description
Bold Bold fonts indicate a required item.
Italic Italic fonts indicate a user-supplied argument.
Monospace Monospace fonts indicate a shell command, line of code, or
URL. A bold monospace font identifies text you enter.
Underline Underlining indicates either the default argument or the default
value of an argument.
UPPercase For certain case-insensitive commands, uppercase indicates the
minimum keyword characters. In most cases, you may omit the
lowercase letters and abbreviate the keyword.
[] Brackets enclose optional arguments. Do not include the brackets
when entering the command unless they are quoted.
{} Braces enclose arguments to show grouping. Do not include the
braces when entering the command unless they are quoted.
‘’ Quotes enclose metacharacters that are to be entered literally. Do
not include single quotes when entering braces or brackets in a
command.
| or || Vertical bars indicate a choice between items. Do not include the
bars when entering the command.
… Three dots (an ellipsis) follows an argument or group of
arguments that may appear more than once. Do not include the
ellipsis when entering the command.
Example:
DEVice {element_name [‘(’model_name‘)’]}
device_layer {pin_layer [‘(’pin_name‘)’] …}
[‘<’auxiliary_layer‘>’ …]
[‘(’swap_list‘)’ …]
[BY NET | BY SHAPE]

16 xCalibrate™ Batch User's Manual, v2016.2

 Chapter 2
MIPT File Format

The MIPT file format enables you to create an ASCII file containing process technology
information.
This chapter includes the following sections that provide information on the MIPT file format:

The MIPT File Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

MIPT File Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Rules for Creating an MIPT File . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
MIPT Syntax Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Keywords . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Units . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Case Sensitivity. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Comments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Use Directive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Encryption. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Hidden Layer Directives . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Calibration Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

The MIPT File Format

The MIPT file format enables you to create an ASCII file containing process technology
information. It is a master profile containing all of the layers, with optional parallel device and
interconnect stacks if needed.
The MIPT 2.0 file format includes:

# header
mipt_version = 2.0
process, date and contact information
calibration_type = ALL # where ALL is one of 4 keyword choices

# base layer:
base = base_name { # Layers must be named
properties # Layers have required and optional properties
}

# dielectric layers:
dielectric = d1 { # where d1 is the user specified name of the dielectric
properties
}

xCalibrate™ Batch User's Manual, v2016.2 17

MIPT File Format
MIPT File Data

dielectric = d2 { # where d2 is the user specified name of the dielectric

properties
}

# metal layer
conductor = m1 {
properties
}

dielectric = d3 {
properties
}

# metal layer
conductor = m2 {
properties
}

# via layers:
via = via1 {
properties
}

via = via2 {
properties
}

MIPT File Data

Before creating an MIPT file, you need the conductor and dielectric information for your
process technology.
The MIPT file should include the following data for each layer:

• Thickness
• Conductor’s minimum width
• Conductor’s minimum spacing
• Distance between conductor layer and substrate
• Conductor layers’ biasing
• Conductor layers’ scaling
• Dielectric constant
For calibration, the MIPT file must define at least one metal layer.

18 xCalibrate™ Batch User's Manual, v2016.2

 MIPT File Format
Rules for Creating an MIPT File

Rules for Creating an MIPT File

Certain rules must be followed when creating or editing MIPT files.
Follow these guidelines:

• Type the keyword as the first token on the line, followed by a space (optional), an equal
sign, a space (optional), and then the argument or values on the same line. Keywords are
not case sensitive. For example, the following three cases are valid and equivalent:
thickness = 0.085
THICKNESS =0.085
Thickness=0.085

The following is not valid:

thickness =
0.085

For more information on keywords, refer to Keywords.

• Valid layer type keywords are base, dielectric, conductor, poly, diffusion, li, contact,
via, and seed.
• Keywords may not be used as layer names or any other reference names.
• When you define a layer, the layer type keyword must come first, followed by an equal
sign then the layer name.
A layer must be given:
o a name.
o a list of layer properties enclosed in braces ({ }). The opening brace must follow the
layer name on the same line. Layers have both required and optional properties.
These properties can be specified in any order. Failure to specify a required property
for a layer will generate an error during calibration.
The following is an example of a valid layer definition:
conductor = metal1 {
min_width = 0.065
min_spacing = 0.065
r_sheet =0.38
thickness = 0.13
extension = 0.01
}

xCalibrate™ Batch User's Manual, v2016.2 19

MIPT File Format
Rules for Creating an MIPT File

The following layer definition is not valid because the opening brace is not on the same
line as the layer name:
conductor = metal1
{
min_width = 0.065
min_spacing = 0.065
r_sheet =0.38
thickness = 0.13
extension = 0.01
}

xCalibrate issues the following message when parsing the MIPT file:
Error XCAL_2_002: MIPT Parser Error:Expected “<layer_type> =
<layer_name> {“ near line 9 in file tech_45nm.mipt

The following layer definition is not valid because it is missing the required parameter
thickness:
conductor = metal1 {
min_width = 0.065
min_spacing = 0.065
r_sheet =0.38
extension = 0.01
}

xCalibrate issues the following message when parsing the MIPT file:
Error XCAL_2_002: MIPT Parser Error:Missing conductor layer
parameter “thickness” for layer near line 94 in file tech_45nm.mipt

• Layer definitions may appear in any order in the file.

• Use the comment character ‘#’ at the start or middle of a line to indicate the text that
follows is a comment. All characters after ‘#’ are ignored. For more information on
comments, refer to Comments.
• Numbers can be floating point and integers. Negative numbers must be prefixed with a
negative sign (-).
• The units for distance, capacitance, and inductance can be changed using the global
parameters distance_unit, cap_unit, and inductance_unit.
• Use the identical capacitance unit in the technology file as the CAD person will use in
the Unit Capacitance SVRF statements.
• If possible, use the identical conductor layer names in the technology file as the CAD
person will use in the Connect SVRF statement.
• You must use a .mipt file name extension when naming your MIPT file.
• It is recommended that you define the layers in their relative order as much as possible.

20 xCalibrate™ Batch User's Manual, v2016.2

 MIPT File Format
MIPT Syntax Conventions

MIPT Syntax Conventions

The MIPT language follows certain syntax conventions.
Keywords . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Units . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Case Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Comments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Use Directive. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Encryption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Hidden Layer Directives . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Calibration Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Keywords
Keywords are assigned a value by using the equals sign (=).
All keywords must have:

• A value assigned to them or a parsing error is generated.

• Values specified on same line as the keyword.
• A single value assigned as a single one line string without spaces. Multiple string values
may be assigned, but must be enclosed within quotes.
Keywords cannot be used as reference names. For more information on available MIPT
keywords see MIPT File Elements.

Units
Unit values for different MIPT parameters are defined by the tool.
The default units used for MIPT values are shown in Table 2-1:

Table 2-1. Default Units for MIPT Values

Property Units
Distance microns (um)
Temperature Celsius
Resistivity ohms
Capacitance femtofarads (1e-15 farads)

xCalibrate™ Batch User's Manual, v2016.2 21

MIPT File Format
Units

Table 2-1. Default Units for MIPT Values (cont.)

Property Units
Inductance picohenrys (1e-12 henrys)

Distance
The default unit for distance is micron, also referred to as micrometer, um, or 1e-06. To specify
a different unit for distance, the distance_unit parameter may be specified in your MIPT file:

distance_unit = unit

This optional parameter affects the global setting for all distance values and must be specified as
a global parameter and not as part of another keyword definition.

Table 2-2 lists the unit values that may be specified for distance_unit:

Table 2-2. Distance Units

Unit Setting Description
a angstrom (1e-10)
nm nanometer (1e-09)
um micrometer or micron (1e-06)

For example, to specify all distance units in nanometers, include the following parameter
specification in your MIPT file:

distance_unit = nm

Temperature
The unit for temperature is degrees Celsius. It is not possible to change the temperature unit.

Resistivity
The unit for resistivity is ohm * distance_unit. The unit for sheet resistance is ohm. It is not
possible to change the resistivity or sheet resistance units. Resistance is a function of
temperature.

Capacitance
The default unit for capacitance is femto-farads (1e-15 farads). To specify a different unit for
capacitance, the cap_unit parameter may be specified in your MIPT file:

cap_unit = unit

22 xCalibrate™ Batch User's Manual, v2016.2

 MIPT File Format
Units

This optional parameter affects the global setting for all capacitance values and must be
specified as a global parameter and not as part of another keyword definition or block.

Table 2-3 lists the unit values that may be specified for cap_unit:

Table 2-3. Capacitance Units

Unit Setting Description
af attofarad (1e-18 farads)
ff femtofarad (1e-15 farads)
pf picofarad (1e-12 farads)
nf nanofarad (1e-09 farads)
uf microfarad (1e-06 farads)
mf millifarad (1e-03 farads)
f farad (1 farad)

For example, to specify all capacitance units in picofarads, include the following parameter
specification in your MIPT file:

cap_unit = pf

Inductance
The default unit for inductance is picohenry (1e-12 henrys). To specify a different unit for
inductance, the inductance_unit parameter may be specified in your MIPT file:

inductance_unit = unit

This optional parameter affects the global setting for all inductance values and must be specified
as a global parameter and not as part of another keyword definition.

Table 2-4 lists the unit values that may be specified for inductance_unit:

Table 2-4. Inductance Units

Unit Setting Description
ah attohenry (1e-18 henry)
fh femtohenry (1e-15 henry)
ph picohenry (1e-12 henry)
nh nanohenry (1e-09 henry)

xCalibrate™ Batch User's Manual, v2016.2 23

MIPT File Format
Case Sensitivity

Table 2-4. Inductance Units (cont.)

Unit Setting Description
uh microhenry (1e-06 henry)
mh millihenry (1e-03 henry)
h henry (1 henry)
For example, to specify all inductance units in nanohenrys, include the following parameter
specification in your MIPT file:

inductance_unit = nh

Case Sensitivity
The MIPT syntax is case sensitive. The case of keywords and values is preserved and output.
This includes layer names and any other specified labels.

Comments
There are two types of comments supported, block and single line.
Single line comments begin with a pound sign (#) character. This character may appear in any
position on the line. All subsequent characters appearing after the pound sign (#) are ignored.
For example:

# This is a single line comment.

This is a comment from # this point on.

Block comments begin with the /* string and end with the */ string. These may surround a
single line or multiple lines. For example:

/* This is a single line block comment.

*/

/* This is a multiple
line
block
comment. */

Block comments can not be nested within other block comments.

Use Directive
The use keyword is an optional text string that enables you to reuse named objects to create new
objects. This is a special keyword that may be used more than once.

24 xCalibrate™ Batch User's Manual, v2016.2

 MIPT File Format
Encryption

The use keyword syntax is:

# <keyword> = <reference_name> use <name of object to be duplicated>.

dielectric = mydiel1 use poly_diel

An optional modifier called with is permitted in the use command. Properties from the re-used
object may be overridden or added to the new object by including the with modifier followed by
the list of properties enclosed in braces ({ }). This modifier may be applied to any use
statement. For example:

# <keyword> = <reference_name> use <name of duplicated object> with {

# properties
#}
dielectric = mydiel1 use poly_diel with {
thickness = 0.299
eps = 3.95
}

The following is an example of how to define a new layer pc_par from an original layer pc:

# original layer is pc, but we want to rename it to pc_par

poly = pc_par use pc {
//thickness for pc_par, overwrites the thickness for pc
thickness = 0.343
r_sheet = 0.23
}

Encryption
#ENCRYPT and #DECRYPT are directives used to control the encryption of SVRF statements.
The SVRF statements are defined within the MIPT file using the optional global parameter
svrf_verbatim. These optional directives may only be used when specifying multiple lines
within braces.

Add the #ENCRYPT directive at the start of the block and the #DECRYPT after the last line of
the block you want to encrypt:

svrf_verbatim = {
PEX REDUCE ANALOG YES
#ENCRYPT
// capacitance controls
CAPACITANCE ORDER poly m1 m2
N4_PEX = M4 NOT GATE
#DECRYPT

xCalibrate™ Batch User's Manual, v2016.2 25

MIPT File Format
Hidden Layer Directives

Statements specified outside of the directives appear in the header section of the calibrated rule
file. Statements specified within the block are encrypted:

...
PEX REDUCE ANALOG YES
#DECRYPT %'+~$IA7I@3^UE:P%1QMT4:*!H;J;1Q!!"[X<'@?U.`WA<L7,O4"R02A!!"
R*E"CSA\+0^Y:"RO@VLX4!!!"E^W["MS@>7R,=2Q$9L>X5@N3-\/>>%CEC7)4!AXFL:Q!#
,L#I!]@%B%5E2.(%Q,^$DQ!!")9OAR4C?L!@9&WA#J']E[1!!"
#ENDCRYPT
...

Hidden Layer Directives

The #HIDDEN and #ENDHIDDEN are directives used to control the encryption of layers in the
calibrated rule file.
The layers defined within the scope of the #HIDDEN and #ENDHIDDEN directives will be
encrypted in the output calibrated rule files. If both directives are not specified a warning is
generated during calibration and the layers remain visible.

Add the #HIDDEN directive at the start of the block and the #ENDHIDDEN after the last line
of the block you want to hide:

...

#HIDDEN
base = field_base {
zbottom = -1
thickness = 1
}

dielectric = field_base_diel {
diel_type = planar
# zbottom = 0
thickness = 0.4
eps = 3.29
}
#ENDHIDDEN

conductor = poly {
# zbottom = 0.4
thickness = 0.1
min_width = 0.046
min_spacing = 0.048
max_width = 0.184
max_spacing = 5
r_sheet = 9
}

...

26 xCalibrate™ Batch User's Manual, v2016.2

 MIPT File Format
Calibration Types

Statements specified within the block are encrypted and layers specified outside of the
directives appear in the calibrated rule file, for example:

...

#DECRYPT %?)~5@~
SQC#A;=D’\OI’/E=T:%D$HW2TW,5~1KT(UWI1)\M!#DZMXS<#)#,<JT>DV)$07QA! !
“_Y4PT;/3P?OCL63J”$YM@A! !”SJ6IG,2X$R,~)?]4Z?N,’/ZU”F3GT--
L’_NU=MP1R2>7OI&10VTB6RO,+^”*ML=!F*V”+&.B-5F-Q;W:2+-JWL!!”])J#J*;6T^-
4;4F:+SIN-!!!”
#ENDCRYPT

XCALIBRATE__poly CONDUCTOR 0.4 0.5 MINWIDTH 0.046 MINSPACING 0.048

EXTENSION 0 MAXWIDTH 0.184 MAXSPACING 5

...

Calibration Types
Calibration types identify the intended used for the MIPT file.
The calibration_type keyword is a required keyword used to indicate the possible uses of a
MIPT file. It accepts one or more of the following values for type:

• RONLY
Specifies that the MIPT file is only intended for RONLY calibrations. When doing an
RONLY calibration, only the technology header and resistance rules are calibrated. It
may not be suitable for other calibrations due to insufficient data or accuracy of data.
If the stack specified in your MIPT file does not contain any dielectric layers, then it
may only be used for calibration of RONLY rules.
• FIELDSOLVER
Specifies that the MIPT file is only intended for FIELDSOLVER calibrations. When
doing a FIELDSOLVER calibration, only the technology header and resistance rules are
calibrated. It may not be suitable for other calibrations due to insufficient data or
accuracy of data.
• RULEBASED
Specifies that the MIPT file is only intended for RULEBASED calibrations. This type
produces the same output as is currently expected for traditional calibrations. It may not
be suitable for other calibrations due to insufficient data or accuracy of data.
• ALL
Specifies that the MIPT file is intended for ALL calibrations. It may be used for other
calibrations as specified on the command line.

xCalibrate™ Batch User's Manual, v2016.2 27

MIPT File Format
Calibration Types

If multiple types are specified they must be enclosed in braces ({ }). For example:

# the following are all valid examples

of how to specify calibration_type
# but remember you may only specify this keyword once in your MIPT file.
calibration_type = RONLY

# or with braces
calibration_type = {ALL}

# or a list of types, this is equivalent to specifying ALL.

calibration_type = {RONLY FIELDSOLVER RULEBASED}

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 Chapter 3
MIPT File Elements

MIPT files are composed with certain file elements.

This chapter provides a summary of information on elements used to create MIPT files.

Global Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Layer Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Base. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Dielectric. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Conductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Derived . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Poly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Seed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
PCaux . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Diffusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Src_drn . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
li . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Device_li . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Contact . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Via. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
TSV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
uBump. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Pad . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Multigate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Substrate Layer Structures. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Well. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Tap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Process Variation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Thickness Variation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Retargeting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Multiple Width Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Gate Fringe Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Table Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88

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MIPT File Elements
Global Parameters

Global Parameters
The global parameters specify global information about the process. Specify this information
before using the layer keywords.
At minimum the following global parameters must be specified:

mipt_version = 2.0
process = allLAYER
calibration_type = ALL

Typically MIPT files also specify the background dielectric and capacitance unit settings:

# Required syntax
mipt_version = 2.0
process = allLAYER
calibration_type = ALL
# Optional but seen quite often
cap_unit = pf
background_dielectric = 2.5

Table 3-1 lists the global parameters.

Table 3-1. Global Parameters

Global Parameters Description
mipt_version Required parameter that specifies the version number of the
MIPT syntax used in the MIPT file.
process Required parameter that specifies the name of the
manufacturing technology (process) being used.
calibration_type Required parameter that specifies the type of calibration
used or possible uses of the MIPT file.
author Optional parameter that specifies the author of the MIPT file
and other related author information.
background_dielectric Optional real number or integer that specifies the value of
the default dielectric constant (permittivity).
cap_unit Optional parameter that specifies the units for capacitance
values.
comment Optional parameter used to specify a string that describes
comments and other information for the manufacturing
technology (process) being used.
corner Optional parameter that specifies the corner variation for the
process.
date Optional parameter that specifies the date the MIPT file
containing the description of the process was created.

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 MIPT File Elements
Global Parameters

Table 3-1. Global Parameters (cont.)

Global Parameters Description
distance_unit Optional parameter that specifies the units for distance
values.
half_node_scale_factor Optional parameter that specifies the amount by which to
scale the layout. Scaling affects a polygon’s width, length,
and spacing properties.
inductance_unit Optional parameter that specifies the unit of inductance to
use for calculating the self inductance of vias.
li_device_model Optional parameter that specifies the type of device model
used during calibration. The default device model is CMOS
if this parameter is not specified.
plate_loading Optional parameter that specifies whether the models and
rules apply loading effects to large plates or very wide wires.
rsh_type Optional parameter that specifies how to interpret the
indices for the sheet resistance (rsh) process variation table.
svrf_verbatim Optional text string or text block that allows the insertion of
SVRF statements in to the calibrated rule deck.
temperature Optional parameter that specifies the nominal temperature
for the calibration in units Celsius. The default value is 25 C.
tsv_model Optional parameter that specifies whether the TSV radius is
retrieved from the rules (device) or the layout (layout)
during calibration. The default is device.
tsv_radius_type Optional parameter that specifies whether the radius of the
TSV is metal or hole. The default is metal.
version Optional parameter that specifies the version number of the
manufacturing technology (process) being used in the MIPT
file.

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MIPT File Elements
Layer Definitions

Layer Definitions
The process technology is principally defined by the layers.
The layer definition syntax is:

layer_type = layer_name {
list_of_parameters
}

A layer_type keyword is followed by an equal sign, a unique user-specified layer_name, and a

list of parameters enclosed in required braces, ({ }). The layer parameters describe the
properties of the layer. Each parameter must appear on its own line. The parameters within the
braces are order independent.

There are three categories of required layers:

• Dielectric layers
• Conducting layers:
o Conductor
o Ground
o Poly
o Diffusion
o li (Metal or Interconnect layers)
• Contact and Via layers
The following layer types are optional:

• Base
• Device_li
• Derived
• Multigate
• Pad
• PCaux
• Resistor
• Src_drn
• Seed
• TSV

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Base

• uBump

Base
Base layers can be specified in two different ways.
In the MIPT file, it is possible to have:

• a single base plane from which all dimensions are defined.

• multiple base layers where each base layer definition represents a different possible
ground plane height.

Single Base Layer

For a single base plane, the reference is established at absolute zero. This plane can be defined
by defining the base layer. The base keyword defines the reference plane by which all other
layers are measured. All other dimensions in the file are relative to the top z-coordinate (ztop) of
this reference plane. This reference plane is used consistently for the interconnect and parallel
(device) stack descriptions. A base layer can not be used with the Use Directive.

Parameters ztop or zbottom, and thickness are required to establish the base plane. If ztop is
used, then zbottom is optional. The recommended usage is ztop = 0 to establish a reference
plane. Most users use the bottom of the shallow trench layer as their base reference plane.
Typically, the base has a negative zbottom, with ztop at 0. If you are using relative ordering for
calculating the z-coordinates of layers, the base definition should appear first.

The following minimum parameters are required for the single base layer definition:

base = <layer_name> {
thickness = <layer thickness>
ztop = 0
zbottom = <bottom z-coordinate, typically a negative value>
}

There can be only one base plane per process definition for parallel stacks.

Multiple Base Layers

Use multiple base layers in a technology stack where each base layer definition represents a
different possible ground plane height. Use this in designs that integrate front-end RF devices
such as power amplifiers, RF switches, and MEMs in conventional CMOS technologies where
both high resistivity (low mobility) and low resistivity substrate areas exist within the same
wafer (multiple substrates). Base layers must be placed below all of the conductor layers.
Calibration produces a set of rules for each base layer as an enclosure layer.

Figure 3-1 describes how more than one substrate can exist inside the technology stack.

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MIPT File Elements
Base

Figure 3-1. Multi-level Substrate

The following is an example of a multiple base layer definition:

base = base_High_R {
zbottom = -1
thickness = 1
}
dielectric = SUBSTRATE {
zbottom = 0
thickness = 700
eps = 11.9
diel_type = planar
}
base = base_Low_R {
zbottom = 699
thickness = 1
}
dielectric = STI {
zbottom = 700
thickness = 1
eps = 4.1
diel_type = planar
}

For information on multiple base layer extraction see “Extracting With Multiple Substrates” in
the Calibre xRC User’s Manual.

Table 3-2 describes the syntax for the base keyword.

Table 3-2. Base Keyword

Base Keyword Description
base Required keyword used to define a base reference plane.
layer_name Required user-specified name that identifies the layer.

Table 3-3 lists the base parameters.

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 MIPT File Elements
Dielectric

Table 3-3. Base Parameters

Base Parameters Description
thickness Required parameter that specifies the thickness of the base
plane.
ztop Parameter that specifies the top z-coordinate of the base
layer. It is required if and only if, zbottom parameter has not
be specified for the layer. If you have specified zbottom you
are not required to specify ztop.
zbottom Parameter that specifies the bottom z-coordinate of the base
layer. It is required if and only if, ztop parameter has not be
specified. If you have specified ztop you are not required to
specify zbottom.
bulk_min_width Optional layer parameter that specifies the minimum width of
the bulk layer.
bulk_resistance Optional layer parameter that specifies the sheet resistance of
the bulk layer.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Dielectric
The dielectric keyword is an optional text string that defines the electrical and physical
characteristics of insulating layers between interconnect layers.
The dielectric keyword is used when specifying dielectric layers and may appear multiple times
in your MIPT file. If the stack specified in your MIPT file does not contain any dielectric layers,
then it may only be used for calibration of RONLY rules.

There are six sub-categories of dielectric:

• planar
• conformal
• rsd_conformal
• trench
• mask
• spacer
Each category has specific parameters required for accurate definition of the dielectric material.

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MIPT File Elements
Dielectric

The following minimum parameters are required for planar dielectrics:

dielectric = <layer_name> {
diel_type = planar
thickness = <value>
eps = <value>
}

In the absence of the z-bottom or z-top settings, the dielectric layer should be defined in the
order immediately after the dielectric layer which is below the current layer.

Conformal, rsd_conformal, trench, and spacer dielectrics require some additional parameters:

dielectric = <layer_name> {
diel_type = conformal
# or diel_type can be set to rsd_conformal, trench, or spacer
thickness = <value>
eps = <value>
ref_layer = <referenced_layer_name>
swthk = <value>
topthk = <value>
}

Rsd_conformal dielectrics have the same properties as conformal dielectrics except they are
applied to raised source/drain (rsd) layers instead of diffusion layers.

Spacer dielectrics are conformal dielectrics used to self align contacts near the gate or other
similar operations. They look and behave just like regular conformal dielectrics, but have
priority over conductors.

The syntax allows the reuse of a layer within another layer stack by using the Use Directive.
The syntax does not allow duplicate layer names and will issue an error if one is encountered
during syntax verification with -check.

By default, the minimal z-coordinate or bottom of the dielectric layer, is placed at the top of the
previously defined dielectric layer. For a conformal dielectric layer, the top is the planar part.
For a trench dielectric, thickness is always zero so the top is always the same as the bottom.

An optional syntax zbottom is available if the dielectric layer is not defined in the specified
order. You can measure from the top of a reference layer defined by relative_to instead of
measured_from. If measured_from is omitted, zbottom measures from absolute 0. The zbottom
parameter defines the bottom of the layer. The ztop parameter defines the top of the layer. Both
measure from the top of the previously placed dielectric layer by default. Note that in the
presence of process variability, the use of an absolute zbottom or minimal z-coordinate
measured from an absolute height, is not a convenient way to specify the position of a layer. In
this case, it is better to use either the default minimal z-coordinate or measured from the top
surface of the previously defined dielectric layer, if the layers are defined in order, or combine
zbottom with measured_from to define the relative layer position if the layers are not defined in
order. The same is true for ztop.

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 MIPT File Elements
Dielectric

It is recommended that layers are defined (stacked) in order as much as possible, without the use
of absolute placement. This is to avoid stacking and measurement confusion in the z-direction.

Table 3-4 describes the syntax for the dielectric keyword.

Table 3-4. Dielectric Keyword

Dielectric Keyword Description
dielectric Required syntax used to define a dielectric layer.
layer_name Required user-specified name that identifies the layer.

Table 3-5 lists the dielectric parameters.

Table 3-5. Dielectric Parameters

Dielectric Parameters Description
diel_type Required parameter that specifies the type of dielectric being
described.
thickness Required parameter that specifies the thickness of the
dielectric layer in the z-direction.
eps Required parameter that specifies the relative permittivity
(dielectric constant).
zbottom Optional parameter that specifies the bottom z-coordinate
when the dielectric layer is not defined in the specified order;
that is, the dielectric layer is not placed relative to a previous
layer’s placement.
ztop Optional parameter that specifies the top z-coordinate when
the dielectric layer is not implicitly placed; that is, the
dielectric layer is not placed relative to a previous layer’s
placement.
measured_from Optional parameter that specifies the layer whose top surface
is used as the base from which the layer’s bottom is measured.
thickness_type Optional parameter used with measured_from. Either relative
or absolute, specifies how thickness is measured. Default is
absolute.
ref_layer Required parameter used when diel_type is set to conformal
or trench.
swthk Required parameter used when diel_type is set to conformal
or trench.

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MIPT File Elements
Conductor

Table 3-5. Dielectric Parameters (cont.)

Dielectric Parameters Description
topthk Required parameter used when diel_type is set to conformal
or trench.
botthk Optional parameter used when diel_type is set to conformal or
trench.
swslope Optional parameter that specifies the angle of the side wall in
degrees. Only permitted when diel_type is set to conformal or
trench.
airgap Optional parameter that specifies the airgap parameters. Only
permitted when diel_type is set to conformal.
damage_eps Optional parameter that specifies the damaged relative
permittivity (dielectric constant), which changes the dielectric
constant in a planar dielectric where the damaged portion
touches the conductor laterally or vertically. Only permitted
when diel_type is set to planar and must be specified with
damage_thickness.
damage_thickness Optional parameter that specifies the damaged thickness of
the dielectric layer in the z-direction where it touches the
conductor laterally or vertically. Only permitted when
diel_type is set to planar and must be specified with
damage_eps.
hidden Optional layer parameter that controls whether or not the layer
is encrypted in the calibrated rule files.

Conductor
The conductor keyword is a required keyword used to define electrical and physical
characteristics of conducting layers, also referred to as metal layers.
You are required to specify at least one conducting layer in your MIPT file. The z-coordinates
can be either relative to the previous layer or absolute compared to a reference. By default, the
z-coordinate of the bottom of the conducting layer is equal to the top z-coordinate of the
previously-defined dielectric layer.

For RONLY calibrations:

• Dielectrics are not allowed. Only conductors are allowed in the RONLY conductor
stack.
• Parallel structures are not allowed. Specify all the conductor and via layers in the master
stack.

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 MIPT File Elements
Conductor

• The z-coordinates, ztop and zbottom, are not allowed in RONLY calibrations. Explicit
placement using these parameters in the RONLY conductor stack generates an error.
Table 3-6 describes the syntax for the conductor keyword.

Table 3-6. Conductor Keyword

Conductor Keyword Description
conductor Required syntax used to define a conductor layer.
layer_name Required user specified name that identifies the layer.

Table 3-7 lists the conductor parameters.

Table 3-7. Conductor Parameters

Conductor Parameters Description
thickness Required parameter that specifies the thickness of the
conductor layer in the z-direction.
min_width Required parameter that specifies the minimum drawn width
of conductor for this layer.
min_spacing Required parameter that specifies the minimum allowed
drawn spacing between conductors on this layer.
resistivity Required if r_sheet parameter is not defined, this parameter
specifies the nominal metal resistance for this layer.
r_sheet Required if resistivity parameter is not defined for the layer,
this parameter specifies the nominal metal resistance for this
layer. This value may be specified as resistivity (rho) or sheet
resistance (rsh).
metal_fill Optional parameter that specifies a set of values enclosed in
braces used to define virtual fill parameters.
ztop Optional parameter that specifies the top z-coordinate when
the metal layer is not implicitly placed; that is, the metal layer
is not placed relative to a previous layer’s placement.
zbottom Optional parameter that specifies the bottom z-coordinate
when the metal layer is not implicitly placed; that is, the metal
layer is not placed relative to a previous layer’s placement.
measured_from Optional parameter that specifies the layer name whose top
surface is used as the base from which zbottom is measured.
If measured_from is omitted, zbottom measures from absolute
0.

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MIPT File Elements
Conductor

Table 3-7. Conductor Parameters (cont.)

Conductor Parameters Description
thickness_type Optional parameter used with measured_from. Either relative
or absolute, specifies how thickness is measured. Default is
absolute.
coplanar_min_spacing Optional keyword that specifies the minimum spacing value
between coplanar layers.
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.
max_width Optional parameter that specifies the maximum allowed metal
width.
max_spacing Optional parameter that specifies the maximum allowed metal
spacing.
layer_bias Optional parameter that specifies the bias on the edge of metal
objects with respect to the drawn width of this layer.
capacitive_only_etch Optional parameter that specifies the layer bias for
capacitance.
cond_type Optional parameter that specifies the conductor layer is non-
planar.
trap_style Optional parameter whose value set as top, middle, or bottom
specifies where the trapezoid measurements are taken from.
extra_width Optional parameter that specifies the extra-width of side walls
for a conductor with a trapezoid shape.
extension Optional parameter that specifies the amount the conductor
layer extends past the diffusion or contact layers. For
diffusion layer, this specifies the amount diffusion extends
past the contact layer.
ronly_layers Optional parameter that specifies a list of r-only layer names.
density_window Optional parameter that specifies a list of values to be applied
to any conductor that has a thickness table.
widths Optional conducting layer parameter that specifies a space
delimited list of floating point width values enclosed in braces
({ }) used to override modeled width values.

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 MIPT File Elements
Resistor

Table 3-7. Conductor Parameters (cont.)

Conductor Parameters Description
spacings Optional conducting layer parameter that specifies a space
delimited list of floating point spacing values enclosed in
braces ({ }) used to override modeled spacing values.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Resistor
The resistor keyword is an optional layer definition keyword used to define a resistor.
A resistor layer has the electrical and physical characteristics of conducting layers, also referred
to as metal layers. The resistor layer represents a resistor such as RMOL and has a physical
location in the layer stack. The z-coordinates can be either relative to the previous layer or
absolute compared to a reference. By default, the z-coordinate of the bottom of the conducting
layer is equal to the top z-coordinate of the previously-defined dielectric layer.

Table 3-8 describes the syntax for the resistor keyword.

Table 3-8. Resistor Keyword

Resistor Keyword Description
resistor Required syntax used to define a resistor layer.
layer_name Required user specified name that identifies the layer.

Table 3-9 lists the resistor parameters.

Table 3-9. Resistor Parameters

Resistor Parameters Description
thickness Required parameter that specifies the thickness of the resistor
layer in the z-direction.
min_width Required parameter that specifies the minimum drawn width
of resistor for this layer.
min_spacing Required parameter that specifies the minimum allowed
drawn spacing between resistors on this layer.
resistivity Required if the r_sheet parameter is not defined, this
parameter specifies the nominal metal resistance for this
layer.

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MIPT File Elements
Resistor

Table 3-9. Resistor Parameters (cont.)

Resistor Parameters Description
r_sheet Required if the resistivity parameter is not defined for the
layer, this parameter specifies the nominal metal resistance
for this layer. This value may be specified as resistivity (rho)
or sheet resistance (rsh).
metal_fill Optional parameter that specifies a set of values enclosed in
braces used to define virtual fill parameters.
ztop Optional parameter that specifies the top z-coordinate when
the metal layer is not implicitly placed; that is, the metal layer
is not placed relative to a previous layer’s placement.
zbottom Optional parameter that specifies the bottom z-coordinate
when the metal layer is not implicitly placed; that is, the metal
layer is not placed relative to a previous layer’s placement.
measured_from Optional parameter that specifies the layer name whose top
surface is used as the base from which zbottom is measured.
If measured_from is omitted, zbottom measures from absolute
0.
thickness_type Optional value used with measured_from. Either relative or
absolute, specifies how thickness is measured. Default is
absolute.
coplanar_min_spacing Optional parameter that specifies the minimum spacing value
between coplanar layers.
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.
max_width Optional parameter that specifies the maximum allowed metal
width.
max_spacing Optional parameter that specifies the maximum allowed metal
spacing.
devices Optional parameter that specifies a set of values enclosed in
braces used to specify the devices the layer definition applies
to.
layer_bias Optional parameter that specifies the bias on the edge of metal
objects with respect to the drawn width of this layer.

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 MIPT File Elements
Ground

Table 3-9. Resistor Parameters (cont.)

Resistor Parameters Description
trap_style Optional parameter value set as top, middle, or bottom that
specifies where the trapezoid measurements are taken from.
extra_width Optional parameter that specifies the extra-width of side walls
for a conductor with a trapezoid shape.
extension Optional parameter that specifies the amount the resistor layer
extends past the diffusion or contact layers. For diffusion
layer, this specifies the amount diffusion extends past the
contact layer.
ronly_layers Optional parameter that specifies a list of r-only layer names.
density_window Optional parameter that specifies a list of values to be applied
to any resistor that has a thickness table.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Ground
The optional ground keyword is used for extraction with field solvers to define electrical and
physical characteristics of conducting layers, also referred to as metal layers. It has the same
properties as a conductor layer with the following exceptions:
• It cannot be connected to a via.
• It may touch or be coplanar with other conductor layers in the interconnect stack,
usually the diffusion layer.
• It may have conformal dielectrics associated with it.
• It cannot have metal_fill, extension, or raised OD parameters.
• It is only used by Calibre xACT 3D.
Table 3-10 describes the syntax for the ground keyword.

Table 3-10. Ground Keyword

Ground Keyword Description
ground Required syntax used to define a ground layer.
layer_name Required user specified name that identifies the layer.

Table 3-11 lists the ground parameters.

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Ground

Table 3-11. Ground Parameters

Ground Parameters Description
thickness Required parameter that specifies the thickness of the ground
layer in the z-direction.
min_width Required parameter that specifies the minimum drawn width
of ground for this layer.
min_spacing Required parameter that specifies the minimum allowed
drawn spacing between conductors on this layer.
resistivity Required if r_sheet parameter is not defined, this parameter
specifies the nominal metal resistance for this layer.
r_sheet Required if resistivity parameter is not defined for the layer,
this parameter specifies the nominal metal resistance for this
layer. This value may be specified as resistivity (rho) or sheet
resistance (rsh).
ztop Optional parameter that specifies the top z-coordinate when
the metal layer is not implicitly placed; that is, the metal layer
is not placed relative to a previous layer’s placement.
zbottom Optional parameter that specifies the bottom z-coordinate
when the metal layer is not implicitly placed; that is, the metal
layer is not placed relative to a previous layer’s placement.
measured_from Optional parameter that specifies the layer name whose top
surface is used as the base from which zbottom is measured.
If measured_from is omitted, zbottom measures from absolute
0.
thickness_type Optional parameter used with measured_from. Either relative
or absolute, specifies how thickness is measured. Default is
absolute.
coplanar_min_spacing Optional parameter that specifies the minimum spacing value
between coplanar layers.
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.
max_width Optional parameter that specifies the maximum allowed metal
width.

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Derived

Table 3-11. Ground Parameters (cont.)

Ground Parameters Description
max_spacing Optional parameter that specifies the maximum allowed metal
spacing.
layer_bias Optional parameter that specifies the bias on the edge of metal
objects with respect to the drawn width of this layer.
trap_style Optional parameter set as top, middle, or bottom that specifies
where the trapezoid measurements are taken from.
extra_width Optional parameter that specifies the extra-width of side walls
for a conductor with a trapezoid shape.
ronly_layers Optional parameter that specifies a list of r-only layer names.
density_window Optional parameter that specifies a list of values to be applied
to any conductor that has a thickness table.
copy Optional parameter that specifies a list of layer names to be
mapped to ground layers under the gate.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Derived
The optional derived keyword defines the electrical characteristics of conducting layers. This
layer type cannot alter any physical parameters of a conducting layer and may be specified more
than once.
It is possible to describe derived layers within a parallel structure definition. These layers have
no physical location in the main stack, and are used to modify the electrical characteristics of
specific regions being mapped to PEX layers from the layout. Derived layers are optional within
the parallel structure and may be one of the following:

• src_drn
• src_drn_contact
• seed
• ronly
• ronly_contact
• ronly_via
There is no requirement that a derived layer needs to be defined before its first use in the MIPT
file. As with other layer types, derived layers may benefit from the use and use with keywords.
For more information on the use keywords, see Use Directive.

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Poly

Table 3-12 describes the syntax for the derived keyword.

Table 3-12. Derived Keyword

Derived Keyword Description
derived Required syntax used to define a derived layer.
layer_name Required user specified name that identifies the layer.

Table 3-13 lists the derived parameters.

Table 3-13. Derived Parameters

Derived Parameters Description
derived_type Required parameter that specifies the type of derived layer
being specified. Must be src_drn, src_drn_contact, seed,
ronly, ronly_contact, or ronly_via.
resistance Required if derived_type is src_drn_contact, ronly_contact, or
ronly_via. Values specifies the resistance of the contact/via in
ohms.
resistivity Required if r_sheet parameter is not defined, this parameter
specifies the nominal metal resistance for this layer.
r_sheet Required if resistivity parameter is not defined for the layer,
this parameter specifies the nominal metal resistance for this
layer. This value may be specified as resistivity (rho) or sheet
resistance (rsh).
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Poly
The poly keyword is an optional keyword used to define electrical and physical characteristics
of conducting layers, also referred to as metal layers.

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Poly

The poly keyword uses the same required and optional properties as conductor and may be
specified more than once. Poly layer type has an additional optional layer property called
seed_layers. Do not use the conducting layer keyword poly for RONLY calibrations.

The z-coordinates can be either relative to the previous layer or absolute compared to a
reference. By default, the z-coordinate of the bottom of the conducting layer is equal to the top
z-coordinate of the previously-defined dielectric layer.

Table 3-14 describes the syntax for the poly keyword.

Table 3-14. Poly Keyword

Poly Keyword Description
poly Optional syntax used to define a poly layer.
layer_name Required user specified name that identifies the layer.

Table 3-15 lists the poly parameters.

Table 3-15. Poly Parameters

Poly Parameters Description
thickness Required parameter that specifies the thickness of the poly
layer in the z-direction.
min_width Required parameter that specifies the minimum drawn width
of poly for this layer.
min_spacing Required parameter that specifies the minimum allowed
drawn spacing between poly for this layer.
resistivity Required if r_sheet parameter is not defined, this parameter
specifies the nominal metal resistance for this layer.
r_sheet Required if resistivity parameter is not defined for the layer,
this parameter specifies the nominal metal resistance for this
layer. This value may be specified as resistivity (rho) or sheet
resistance (rsh).
metal_fill Optional parameter that specifies a set of values enclosed in
braces used to define virtual fill parameters.
thickness_type Optional parameter set to either relative or absolute, which
specifies how thickness is measured.
ztop Optional parameter that specifies the top z-coordinate when
the metal layer is not implicitly placed; that is, the metal layer
is not placed relative to a previous layer’s placement.

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Table 3-15. Poly Parameters (cont.)

Poly Parameters Description
zbottom Optional parameter that specifies the bottom z-coordinate
when the metal layer is not implicitly placed; that is, the metal
layer is not placed relative to a previous layer’s placement.
measured_from Optional parameter that specifies the layer name whose top
surface is used as the base from which zbottom is measured.
If measured_from is omitted, zbottom measures from absolute
0.
coplanar_min_spacing Optional parameter that specifies the minimum spacing value
between coplanar layers.
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.
max_width Optional parameter that specifies the maximum allowed metal
width.
max_spacing Optional parameter that specifies the maximum allowed metal
spacing.
devices Optional parameter that specifies a set of values enclosed in
braces used to specify the devices the layer definition applies
to.
layer_bias Optional parameter that specifies the bias on the edge of metal
objects with respect to the drawn width of this layer.
capacitive_only_etch Optional parameter that specifies the layer bias for
capacitance.
trap_style Optional parameter set as top, middle, or bottom that specifies
where the trapezoid measurements are taken from.
extra_width Optional parameter that specifies the extra-width of side walls
for a conductor with a trapezoid shape.
extension Optional parameter that specifies the amount the conductor
layer extends past the diffusion or contact layers. For
diffusion layer, this specifies the amount diffusion extends
past the contact layer.
ronly_layers Optional parameter that specifies a list of r-only layer names.

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Seed

Table 3-15. Poly Parameters (cont.)

Poly Parameters Description
density_window Optional parameter that specifies a list of values to be applied
to any conductor that has a thickness table.
widths Optional conducting layer parameter that specifies a space
delimited list of floating point width values enclosed in braces
({ }) used to override modeled width values.
spacings Optional conducting layer parameter that specifies a space
delimited list of floating point spacing values enclosed in
braces ({ }) used to override modeled spacing values.
src_drn_layers Optional parameter that specifies a space delimited list of
src_drn layer names.
seed_layers Optional parameter that specifies a list of seed layer names.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Seed
The seed keyword is an optional keyword used to define the area of the poly over the diffusion
layer.
Seed layers are primary layers and have a physical location in the layer stack. The seed layer
must be defined with an associated poly layer by specifying the seed_layers parameter in the
poly layer definition. Seed layers use the same parameters as poly layer type, however all seed
layer parameters are optional, not required. The seed layer inherits parameter settings from its
associated poly layer. Any parameters specified in the seed layer definition override the
parameter setting specified in the parent poly layer. Do not use the conducting layer keyword
seed for RONLY calibrations.

The z-coordinates can be either relative to the previous layer or absolute compared to a
reference. By default, the z-coordinate of the bottom of the conducting layer is equal to the top
z-coordinate of the previously-defined dielectric layer.

Table 3-16 describes the syntax for the seed keyword.

Table 3-16. Seed Keyword

Seed Keyword Description
seed Optional syntax used to define a seed layer.
layer_name Required user specified name that identifies the layer.

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Seed

Table 3-17 lists the seed parameters.

Table 3-17. Seed Parameters

Seed Parameters Description
thickness Optional parameter that specifies the thickness of the seed
layer in the z-direction.
min_width Optional parameter that specifies the minimum drawn
width of seed for this layer.
min_spacing Optional parameter that specifies the minimum allowed
drawn spacing between seed layers for this layer.
resistivity Optional if r_sheet parameter is not defined, this parameter
specifies the nominal metal resistance for this layer.
r_sheet Optional if resistivity parameter is not defined for the layer,
this parameter specifies the nominal metal resistance for
this layer. This value may be specified as resistivity (rho) or
sheet resistance (rsh).
metal_fill Optional parameter that specifies a set of values enclosed in
braces used to define virtual fill parameters.
thickness_type Optional parameter, either relative or absolute, that
specifies how thickness is measured.
ztop Optional parameter that specifies the top z-coordinate when
the metal layer is not implicitly placed; that is, the metal
layer is not placed relative to a previous layer’s placement.
zbottom Optional parameter that specifies the bottom z-coordinate
when the metal layer is not implicitly placed; that is, the
metal layer is not placed relative to a previous layer’s
placement.
measured_from Optional parameter that specifies the layer name whose top
surface is used as the base from which zbottom is
measured. If measured_from is omitted, zbottom measures
from absolute 0.
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.

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Table 3-17. Seed Parameters (cont.)

Seed Parameters Description
max_width Optional parameter that specifies the maximum allowed
metal width.
max_spacing Optional parameter that specifies the maximum allowed
metal spacing.
multigate parameter Optional parameter that specifies which default multigate
model for FinFETs should be used during calibration.
devices Optional parameter that specifies a set of values enclosed in
braces used to specify the devices the layer definition
applies to.
layer_bias Optional parameter that specifies the bias on the edge of
metal objects with respect to the drawn width of this layer.
contact_width2 Optional parameter that specifies the ct2 bias width for a
seed layer contact.
trap_style Optional parameter, set as top, middle, or bottom that
specifies where the trapezoid measurements are taken from.
extra_width Optional parameter that specifies the extra-width of side
walls for a conductor with a trapezoid shape.
extension Optional parameter that specifies the amount the conductor
layer extends past the diffusion or contact layers. For
diffusion layer, this specifies the amount diffusion extends
past the contact layer.
gate_to_cont_min_spacing Optional parameter that specifies the minimum spacing
between the gate poly layer and the diffusion contact layer.
See the contact from diffusion to metal1 in Figure 3-2 for
details.
gate_to_LI1_min_spacing Optional parameter that specifies the minimum spacing
between the gate poly layer (PC) and the li layer touching
the diffusion layer (TS). See Figure 3-2 for details.
gate_to_LI2_min_spacing Optional parameter that specifies the minimum spacing
between the gate poly layer (PC) and the second li layer
(CA). See Figure 3-2 for details.
gate_to_via_min_spacing Optional parameter that specifies the minimum spacing
between the gate poly layer and the diffusion via layer. See
the via from diffusion (Rx) to li1 layer (TS) in Figure 3-2
for details.
ignore_diff_intrinsic Optional parameter that controls whether or not capacitance
from diffusion to ground is ignored by calibration.

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Table 3-17. Seed Parameters (cont.)

Seed Parameters Description
ignore_diff_to_diff_under_poly Optional parameter that controls whether or not diffusion to
diffusion under poly capacitance is ignored by calibration.
ignore_endcap Optional parameter that controls whether or not poly
extension to source and drain coupling is ignored by
calibration.
ignore_gate_intrinsic Optional parameter that controls whether or not capacitance
from the gate poly layer to ground is ignored by calibration.
ignore_gate_to_diff Optional parameter that controls whether or not the
coupling capacitance between gates to diffusion is ignored
by calibration.
ignore_gateext_to_diff Optional parameter that controls whether or not the
coupling capacitance between the gate extension to
diffusion and raised source/drain is ignored by calibration.
ignore_gateext_to_diff_only Optional parameter that controls whether or not the
coupling capacitance between the gate extension to
diffusion is ignored by calibration.
ignore_rsd Optional parameter that controls whether or not the poly to
raised source/drain coupling is ignored by calibration.
ignore_rsd_intrinsic Optional parameter that controls whether or not the
capacitance between raised source/drain layer and ground is
ignored by calibration.
rsd_enclosure Optional parameter that specifies raised source/drain edge
bias. See the measurement labeled “Raised OD edge
biasing” in Figure 3-3 in “Diffusion” for details.
rsd_thickness Optional parameter that specifies raised source/drain
height. See the measurement labeled “Raised Height” in
Figure 3-3 in “Diffusion” for details.
rsd_spacing Optional parameter that specifies raised source/drain gate
spacing. See the measurement labeled “Raised OD to Gate
Poly Spacing” in Figure 3-3 in “Diffusion” for details.
ronly_layers Optional parameter that specifies a list of r-only layer
names.
density_window Optional parameter that specifies a list of values to be
applied to any conductor that has a thickness table.
src_drn_layers Optional parameter that specifies a space delimited list of
src_drn layer names.
seed_layers Optional parameter that specifies a list of seed layer names.

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PCaux

Table 3-17. Seed Parameters (cont.)

Seed Parameters Description
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

The diagram in Figure 3-2 describes how the gate to contact and via minimum spacing
properties are represented.

Figure 3-2. Gate to Contact/Via Min Spacing

PCaux
The pcaux keyword is an optional keyword used to define a floating (non-gate) poly layer
abutting the diffusion in between or at the end of a device. PCaux layers are dummy layers
treated as field poly and have a physical location in the layer stack.
Table 3-18 describes the syntax for the pcaux keyword.

Table 3-18. PCaux Keyword

Pcaux Keyword Description
pcaux Optional syntax used to define a pcaux layer.
layer_name Required user specified name that identifies the layer.

Table 3-19 lists the pcaux parameters.

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Table 3-19. PCaux Parameters

Pcaux Parameters Description
thickness Required parameter that specifies the thickness of the pcaux
layer in the z-direction.
min_width Required parameter that specifies the minimum drawn width
of pcaux for this layer.
min_spacing Required parameter that specifies the minimum allowed
drawn spacing between pcaux layers for this layer.
resistivity Optional if r_sheet parameter is not defined, this parameter
specifies the nominal metal resistance for this layer.
r_sheet Optional if resistivity parameter is not defined for the layer,
this parameter specifies the nominal metal resistance for this
layer. This value may be specified as resistivity (rho) or
sheet resistance (rsh).
metal_fill Optional parameter that specifies a set of values enclosed in
braces used to define virtual fill parameters.
thickness_type Optional parameter, either relative or absolute, that specifies
how thickness is measured.
ztop Optional parameter that specifies the top z-coordinate when
the metal layer is not implicitly placed; that is, the metal
layer is not placed relative to a previous layer’s placement.
zbottom Optional parameter that specifies the bottom z-coordinate
when the metal layer is not implicitly placed; that is, the
metal layer is not placed relative to a previous layer’s
placement.
measured_from Optional parameter that specifies the layer name whose top
surface is used as the base from which zbottom is measured.
If measured_from is omitted, zbottom measures from
absolute 0.
coplanar_min_spacing Optional parameter that specifies the minimum spacing
value between coplanar layers.
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.

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Table 3-19. PCaux Parameters (cont.)

Pcaux Parameters Description
max_width Optional parameter that specifies the maximum allowed
metal width.
max_spacing Optional parameter that specifies the maximum allowed
metal spacing.
multigate parameter Optional parameter that specifies which default multigate
model for FinFETs should be used during calibration.
devices Optional parameter that specifies a set of values enclosed in
braces used to specify the devices the layer definition applies
to.
layer_bias Optional parameter that specifies the bias on the edge of
metal objects with respect to the drawn width of this layer.
contact_width2 Optional parameter that specifies the ct2 bias width for a
seed layer contact.
trap_style Optional parameter, set as top, middle, or bottom that
specifies where the trapezoid measurements are taken from.
extra_width Optional parameter that specifies the extra-width of side
walls for a conductor with a trapezoid shape.
extension Optional parameter that specifies the amount the conductor
layer extends past the diffusion or contact layers. For
diffusion layer, this specifies the amount diffusion extends
past the contact layer.
gate_to_cont_min_spacing Optional parameter that specifies the minimum spacing
between the gate poly layer and the diffusion contact layer.
See the contact from diffusion to metal1 in Figure 3-2 in
“Seed” for details.
gate_to_LI1_min_spacing Optional parameter that specifies the minimum spacing
between the gate poly layer (PC) and the li layer touching the
diffusion layer (TS). See Figure 3-2 in “Seed” for details.
gate_to_LI2_min_spacing Optional parameter that specifies the minimum spacing
between the gate poly layer (PC) and the second li layer
(CA). See Figure 3-2 in “Seed” for details.
gate_to_via_min_spacing Optional parameter that specifies the minimum spacing
between the gate poly layer and the diffusion via layer. See
the via from diffusion (Rx) to li1 layer (TS) in Figure 3-2 in
“Seed” for details.
ignore_diff_to_diff_under_pol Optional parameter that controls whether or not diffusion to
y diffusion under poly capacitance is ignored by calibration.

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Table 3-19. PCaux Parameters (cont.)

Pcaux Parameters Description
ignore_endcap Optional parameter that controls whether or not poly
extension to source and drain coupling is ignored by
calibration.
ignore_gate_to_diff Optional parameter that controls whether or not the coupling
capacitance between gates to diffusion is ignored by
calibration.
ignore_gateext_to_diff Optional parameter that controls whether or not the coupling
capacitance between the gate extension to diffusion and
raised source/drain is ignored by calibration.
ignore_gateext_to_diff_only Optional parameter that controls whether or not the coupling
capacitance between the gate extension to diffusion is
ignored by calibration.
rsd_enclosure Optional parameter that specifies raised source/drain edge
bias. See the measurement labeled “Raised OD edge
biasing” in Figure 3-3 in “Diffusion” for details.
rsd_thickness Optional parameter that specifies raised source/drain height.
See the measurement labeled “Raised Height” in Figure 3-3
in “Diffusion” for details.
rsd_spacing Optional parameter that specifies raised source/drain gate
spacing. See the measurement labeled “Raised OD to Gate
Poly Spacing” in Figure 3-3 in “Diffusion” for details.
ronly_layers Optional parameter that specifies a list of r-only layer names.
density_window Optional parameter that specifies a list of values to be
applied to any conductor that has a thickness table.
src_drn_layers Optional parameter that specifies a space delimited list of
src_drn layer names.
seed_layers Optional parameter that specifies a list of seed layer names.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Diffusion
The diffusion keyword is an optional keyword used to define electrical and physical
characteristics of conducting layers, also referred to as metal layers.
The diffusion keyword uses the same required and optional properties as conductor and may be
specified more than once. Diffusion layer type has an additional optional layer property called
src_drn_layers. Do not use the conducting layer keyword diffusion for RONLY calibrations.

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Diffusion

The z-coordinates can be either relative to the previous layer or absolute compared to a
reference. By default, the z-coordinate of the bottom of the conducting layer is equal to the top
z-coordinate of the previously-defined dielectric layer.

Table 3-20 describes the syntax for the diffusion keyword.

Table 3-20. Diffusion Keyword

Diffusion Keyword Description
diffusion Optional syntax used to define a diffusion layer.
layer_name Required user specified name that identifies the layer.

Table 3-21 lists the diffusion parameters.

Table 3-21. Diffusion Parameters

Diffusion Parameters Description
thickness Required parameter that specifies the thickness of the
diffusion layer in the z-direction.
min_width Required parameter that specifies the minimum drawn width
of diffusion for this layer.
min_spacing Required parameter that specifies the minimum allowed
drawn spacing between metal for this layer.
resistivity Required if r_sheet parameter is not defined, this parameter
specifies the nominal metal resistance for this layer.
r_sheet Required if resistivity parameter is not defined for the layer,
this parameter specifies the nominal metal resistance for this
layer. This value may be specified as resistivity (rho) or sheet
resistance (rsh).
metal_fill Optional parameter that specifies a set of values enclosed in
braces used to define virtual fill parameters.
thickness_type Optional parameter, either relative or absolute, that specifies
how thickness is measured.
ztop Optional parameter that specifies the top z-coordinate when
the metal layer is not implicitly placed; that is, the metal layer
is not placed relative to a previous layer’s placement.
zbottom Optional parameter that specifies the bottom z-coordinate
when the metal layer is not implicitly placed; that is, the metal
layer is not placed relative to a previous layer’s placement.

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Table 3-21. Diffusion Parameters (cont.)

Diffusion Parameters Description
measured_from Optional parameter that specifies the layer name whose top
surface is used as the base from which zbottom is measured.
If measured_from is omitted, zbottom measures from absolute
0.
coplanar_min_spacing Optional parameter that specifies the minimum spacing value
between coplanar layers.
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.
max_width Optional parameter that specifies the maximum allowed metal
width.
max_spacing Optional parameter that specifies the maximum allowed metal
spacing.
devices Optional parameter that specifies a set of values enclosed in
braces used to specify the devices the layer definition applies
to.
layer_bias Optional parameter that specifies the bias on the edge of metal
objects with respect to the drawn width of this layer.
trap_style Optional parameter set as top, middle, or bottom, that
specifies where the trapezoid measurements are taken from.
extra_width Optional parameter that specifies the extra-width of side walls
for a conductor with a trapezoid shape.
extension Optional parameter that specifies the amount the conductor
layer extends past the diffusion or contact layers. For
diffusion layer, this specifies the amount diffusion extends
past the contact layer.
ronly_layers Optional parameter that specifies a list of r-only layer names.
density_window Optional parameter that specifies a list of values to be applied
to any conductor that has a thickness table.
src_drn_layers Optional parameter that specifies a space delimited list of
src_drn layer names.

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Src_drn

Table 3-21. Diffusion Parameters (cont.)

Diffusion Parameters Description
rsd_enclosure Optional parameter that specifies raised source/drain edge
bias. See the measurement labeled “Raised OD edge biasing”
in Figure 3-3 for details.
rsd_thickness Optional parameter that specifies raised source/drain height.
See the measurement labeled “Raised Height” in Figure 3-3
for details.
rsd_spacing Optional parameter that specifies raised source/drain gate
spacing. See the measurement labeled “Raised OD to Gate
Poly Spacing” in Figure 3-3 for details.
widths Optional conducting layer parameter that specifies a space
delimited list of floating point width values enclosed in braces
({ }) used to override modeled width values.
spacings Optional conducting layer parameter that specifies a space
delimited list of floating point spacing values enclosed in
braces ({ }) used to override modeled spacing values.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.
The diagram in Figure 3-3 describes how the raised source/drain parameters for diffusion layers
are measured.

Figure 3-3. Raised Source/Drain Parameters

Src_drn
The src_drn keyword is an optional keyword used to define the diffusion layer area used to form
the gate.
Src_drn layers have a physical location in the layer stack. A src_drn layer must be defined with
an associated diffusion layer by specifying the src_drn_layers parameter in the diffusion layer
definition. Src_drn uses the same parameters as diffusion layer type, except all src_drn

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parameters are optional, not required. The src_drn layer inherits parameter settings from its
associated diffusion layer. Any parameters specified in the src_drn layer definition override the
parameter setting specified in the parent diffusion layer. Do not use the conducting layer
keyword src_drn for RONLY calibrations.

The z-coordinates can be either relative to the previous layer or absolute compared to a
reference. By default, the z-coordinate of the bottom of the conducting layer is equal to the top
z-coordinate of the previously-defined dielectric layer.

Table 3-22 describes the syntax for the src_drn keyword.

Table 3-22. Src_drn Keyword

Src_drn Keyword Description
src_drn Optional syntax used to define a src_drn layer.
layer_name Required user specified name that identifies the layer.

Table 3-23 lists the src_drn parameters.

Table 3-23. Src_drn Parameters

Src_drn Parameters Description
thickness Optional for src_drn. Specifies the thickness of the src_drn
layer in the z-direction.
min_width Optional for src_drn. Specifies the minimum drawn width of
src_drn for this layer.
min_spacing Optional for src_drn. Specifies the minimum allowed drawn
spacing between metal for this layer.
resistivity Optional for src_drn. Specifies the nominal metal resistance
for this layer.
r_sheet Optional for src_drn. Specifies the nominal metal resistance
for this layer. This value may be specified as resistivity (rho)
or sheet resistance (rsh).
metal_fill Optional parameter that specifies a set of values enclosed in
braces used to define virtual fill parameters.
thickness_type Optional parameter, either relative or absolute, that specifies
how thickness is measured.
ztop Optional parameter that specifies the top z-coordinate when
the metal layer is not implicitly placed; that is, the metal layer
is not placed relative to a previous layer’s placement.

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Table 3-23. Src_drn Parameters (cont.)

Src_drn Parameters Description
zbottom Optional parameter that specifies the bottom z-coordinate
when the metal layer is not implicitly placed; that is, the metal
layer is not placed relative to a previous layer’s placement.
measured_from Optional parameter that specifies the layer name whose top
surface is used as the base from which zbottom is measured.
If measured_from is omitted, zbottom measures from absolute
0.
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.
max_width Optional parameter that specifies the maximum allowed metal
width.
max_spacing Optional parameter that specifies the maximum allowed metal
spacing.
layer_bias Optional parameter that specifies the bias on the edge of metal
objects with respect to the drawn width of this layer.
trap_style Optional parameter set as top, middle, or bottom, that
specifies where the trapezoid measurements are taken from.
devices Optional parameter that specifies a set of values enclosed in
braces used to specify the devices the layer definition applies
to.
extra_width Optional parameter that specifies the extra-width of side walls
for a conductor with a trapezoid shape.
extension Optional parameter that specifies the amount the conductor
layer extends past the src_drn or contact layers. For src_drn
layer, this specifies the amount src_drn extends past the
contact layer.
ronly_layers Optional parameter that specifies a list of r-only layer names.
density_window Optional parameter that specifies a list of values to be applied
to any conductor that has a thickness table.
src_drn_layers Optional parameter that specifies a space delimited list of
src_drn layer names.

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li

Table 3-23. Src_drn Parameters (cont.)

Src_drn Parameters Description
rsd_enclosure Optional parameter that specifies raised source/drain edge
bias. See the measurement labeled “Raised OD edge biasing”
in Figure 3-3 in “Diffusion” for details.
rsd_thickness Optional parameter that specifies raised source/drain height.
See the measurement labeled “Raised Height” in Figure 3-3 in
“Diffusion” for details.
rsd_spacing Optional parameter that specifies raised source/drain gate
spacing. See the measurement labeled “Raised OD to Gate
Poly Spacing” in Figure 3-3 in “Diffusion” for details.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

li
The li keyword is an optional keyword used to define electrical and physical characteristics of
conducting layers, also referred to as metal layers or local interconnect. The li keyword uses the
same required and optional properties as conductor and may be specified more than once.
The z-coordinates can be either relative to the previous layer or absolute compared to a
reference. By default, the z-coordinate of the bottom of the conducting layer is equal to the top
z-coordinate of the previously-defined dielectric layer.

Table 3-24 describes the syntax for li layer keywords.

Table 3-24. li Keyword

li Keyword Description
li Required syntax used to define a local interconnect (li) layer.
layer_name Required user specified name that identifies the layer.

Table 3-25 lists the li parameters.

Table 3-25. li Parameters

li Parameters Description
thickness Required parameter that specifies the thickness of the li layer
in the z-direction.

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Table 3-25. li Parameters (cont.)

li Parameters Description
min_width Required parameter that specifies the minimum drawn width
of li for this layer.
min_spacing Required parameter that specifies the minimum allowed
drawn spacing between li on this layer.
resistivity Required if r_sheet parameter is not defined, this parameter
specifies the nominal metal resistance for this layer.
r_sheet Required if resistivity parameter is not defined for the layer,
this parameter specifies the nominal metal resistance for this
layer. This value may be specified as resistivity (rho) or sheet
resistance (rsh).
metal_fill Optional parameter that specifies a set of values enclosed in
braces used to define virtual fill parameters.
thickness_type Optional parameter, either relative or absolute, that specifies
how thickness is measured.
ztop Optional parameter that specifies the top z-coordinate when
the metal layer is not implicitly placed; that is, the metal layer
is not placed relative to a previous layer’s placement.
zbottom Optional parameter that specifies the bottom z-coordinate
when the metal layer is not implicitly placed; that is, the metal
layer is not placed relative to a previous layer’s placement.
measured_from Optional parameter that specifies the layer name whose top
surface is used as the base from which zbottom is measured.
If measured_from is omitted, zbottom measures from absolute
0.
coplanar_min_spacing Optional parameter that specifies the minimum spacing value
between coplanar layers.
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.
max_width Optional parameter that specifies the maximum allowed metal
width.
max_spacing Optional parameter that specifies the maximum allowed metal
spacing.

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Device_li

Table 3-25. li Parameters (cont.)

li Parameters Description
devices Optional parameter that specifies a set of values enclosed in
braces used to specify the devices the layer definition applies
to.
layer_bias Optional parameter that specifies the bias on the edge of metal
objects with respect to the drawn width of this layer.
trap_style Optional parameter set as top, middle, or bottom, that
specifies where the trapezoid measurements are taken from.
extra_width Optional parameter that specifies the extra-width of side walls
for a conductor with a trapezoid shape.
extension Optional parameter that specifies the amount the conductor
layer extends past the diffusion or contact layers. For
diffusion layer, this specifies the amount diffusion extends
past the contact layer.
device_li_layers Optional parameter that specifies a space delimited list of
device_li layer names identifying the device LI layers
associated with it.
ronly_layers Optional parameter that specifies a list of r-only layer names.
density_window Optional parameter that specifies a list of values to be applied
to any conductor that has a thickness table.
src_drn_layers Optional parameter that specifies a space delimited list of
src_drn layer names.
widths Optional conducting layer parameter that specifies a space
delimited list of floating point width values enclosed in braces
({ }) used to override modeled width values.
spacings Optional conducting layer parameter that specifies a space
delimited list of floating point spacing values enclosed in
braces ({ }) used to override modeled spacing values.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Device_li
The device_li keyword is used to define the device region of the li layer. The device_li keyword
uses the same required and optional properties as li and may be specified more than once.
The z-coordinates can be either relative to the previous layer or absolute compared to a
reference. By default, the z-coordinate of the bottom of the conducting layer is equal to the top
z-coordinate of the previously-defined dielectric layer.

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Device_li

Table 3-26 describes the syntax for device_li keywords.

Table 3-26. Device_li Keyword

Device_li Keyword Description
device_li Required syntax used to define a device local interconnect (li)
layer.
layer_name Required user specified name that identifies the layer.

Table 3-27 lists the device_li parameters.

Table 3-27. Device_li Parameters

Device_li Parameters Description
thickness Required parameter that specifies the thickness of the
device_li layer in the z-direction.
min_width Required parameter that specifies the minimum drawn width
of device_li for this layer.
min_spacing Required parameter that specifies the minimum allowed
drawn spacing between device_li on this layer.
resistivity Required if r_sheet parameter is not defined, this parameter
specifies the nominal metal resistance for this layer.
r_sheet Required if resistivity parameter is not defined for the layer,
this parameter specifies the nominal metal resistance for this
layer. This value may be specified as resistivity (rho) or sheet
resistance (rsh).
metal_fill Optional parameter that specifies a set of values enclosed in
braces used to define virtual fill parameters.
thickness_type Optional parameter, either relative or absolute, that specifies
how thickness is measured.
ztop Optional parameter that specifies the top z-coordinate when
the metal layer is not implicitly placed; that is, the metal layer
is not placed relative to a previous layer’s placement.
zbottom Optional parameter that specifies the bottom z-coordinate
when the metal layer is not implicitly placed; that is, the metal
layer is not placed relative to a previous layer’s placement.

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Table 3-27. Device_li Parameters (cont.)

Device_li Parameters Description
measured_from Optional parameter that specifies the layer name whose top
surface is used as the base from which zbottom is measured.
If measured_from is omitted, zbottom measures from absolute
0.
coplanar_min_spacing Optional parameter that specifies the minimum spacing value
between coplanar layers.
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.
max_width Optional parameter that specifies the maximum allowed metal
width.
max_spacing Optional parameter that specifies the maximum allowed metal
spacing.
devices Optional parameter that specifies a set of values enclosed in
braces used to specify the devices the layer definition applies
to.
layer_bias Optional parameter that specifies the bias on the edge of metal
objects with respect to the drawn width of this layer.
capacitive_only_etch Optional parameter that specifies the layer bias for
capacitance.
trap_style Optional parameter set as top, middle, or bottom, that
specifies where the trapezoid measurements are taken from.
extra_width Optional parameter that specifies the extra-width of side walls
for a conductor with a trapezoid shape.
extension Optional parameter that specifies the amount the conductor
layer extends past the diffusion or contact layers. For
diffusion layer, this specifies the amount diffusion extends
past the contact layer.
ronly_layers Optional parameter that specifies a list of r-only layer names.
density_window Optional parameter that specifies a list of values to be applied
to any conductor that has a thickness table.
src_drn_layers Optional parameter that specifies a space delimited list of
src_drn layer names. .

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Contact

Table 3-27. Device_li Parameters (cont.)

Device_li Parameters Description
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Contact
The contact keyword is an optional keyword used to define electrical and physical
characteristics of contact layers. Contact layers are optional.
Table 3-28 describes the contact keyword.

Table 3-28. Contact Keyword

Contact Keyword Description
contact Required syntax used to define a contact layer.
layer_name Required user specified name that identifies the layer.

Table 3-29 lists the contact parameters.

Table 3-29. Contact Parameters

Contact Parameters Description
measured_from Required parameter that specifies lower conductor
layer_name.
measured_to Required parameter that specifies upper conductor
layer_name.
area Required if min_width is not specified for the contact.
Specifies the area of the contact in distance_units squared.
min_width Required if area is not specified for the contact. Specifies
the minimum drawn width of the contact. Shape is assumed
to be square.
min_spacing Required parameter that specifies the minimum allowed
drawn spacing between li on this layer.
resistance Required parameter that specifies the resistance of the
contact in ohms.
enclosure_down Required parameter that specifies enclosure with respect to
a lower conductor.

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Via

Table 3-29. Contact Parameters (cont.)

Contact Parameters Description
enclosure_up Required parameter that specifies enclosure with respect to
an upper conductor.
min_length Optional parameter that specifies the length of the shape.
bottom_thickness Optional parameter that specifies the lower section of the
diffusion contact.
tc1 Optional parameter that specifies the first order
temperature coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
gate_to_cont_spacing_min Optional parameter that specifies the minimum allowed
gate to contact spacing.
extra_width Optional parameter that specifies the extra-width of side
walls for a conductor with a trapezoid shape.
ronly_layers Optional parameter that specifies a list of r-only layer
names.
src_drn_contact_layers Optional parameter that specifies the layer or layers that
make up the source/drain contact region of devices.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Via
The via layer syntax defines the electrical and physical characteristics of the connections
between layers. Via layers are optional.
Table 3-30 describes the via keyword.

Table 3-30. Via Keyword

Via Keyword Description
via Required syntax used to define a via layer.
layer_name Required user specified name that identifies the layer.

Table 3-31 lists the via parameters.

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Via

Table 3-31. Via Parameters

Via Parameters Description
measured_from Required parameter that specifies lower conductor
layer_name.
measured_to Required parameter that specifies upper conductor
layer_name.
area Required if min_width is not specified for the via. Specifies
the area of the via in distance_units squared.
min_width Required if area is not specified for the via. Specifies the
minimum drawn width of the via. Shape is assumed to be
square.
min_spacing Required parameter that specifies the minimum allowed
drawn spacing between li on this layer.
resistance Required parameter that specifies the resistance of the via
in ohms.
enclosure_down Required parameter that specifies enclosure with respect to
a lower conductor.
enclosure_up Required parameter that specifies enclosure with respect to
an upper conductor.
max_area Optional parameter that specifies the area threshold for
large area via connections.
max_length Optional parameter that specifies the maximum distance
between distributed vias.
min_length Optional parameter that specifies the length of the shape.
tc1 Optional parameter that specifies the first order
temperature coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
gate_to_via_spacing_min Optional parameter that specifies the minimum allowed
gate to via spacing.
extra_width Optional parameter that specifies the extra-width of side
walls for a conductor with a trapezoid shape.
ronly_layers Optional parameter that specifies a list of r-only layer
names.
parallel_to_gate Optional layer parameter that specifies how the via width
and length are measured.

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TSV

Table 3-31. Via Parameters (cont.)

Via Parameters Description
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.
trim Optional layer parameter that controls how resistance is
calculated for the via.

TSV
The optional TSV keyword defines the electrical and physical characteristics of through silicon
vias.
Figure 3-4 shows a 3D-IC with front metal (M1 - M5), back metal (BM1 - BM2) in addition to
a TSV going through the substrate.

Figure 3-4. TSV

Typically micro-balls are used to make electrical connections from one 3D-IC to another die.
The TSV model must have two external pins. Pin1 is measured from the start layer and Pin2
measured to the stop layer. Multiple TSV layers may be defined.

All TSV processes have insulators surrounding the TSV as shown in Figure 3-5. You should
describe the insulators using either a conformal dielectric layer or with the TSV layer insulator
parameter.

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TSV

Figure 3-5. TSV Insulator

For more information on TSV extraction see “Getting Started: Calibre xACT TSV Parasitic
Extraction Using Batch Mode” in the Calibre xACT User’s Manual.

Table 3-32 describes the syntax for the TSV keyword.

Table 3-32. TSV Keyword

TSV Keyword Description
TSV Required syntax used to define a TSV layer.
layer_name Required user specified name that identifies the layer.

Table 3-33 lists the TSV parameters.

Table 3-33. TSV Parameters

TSV Parameters Description
measured_from Required parameter that specifies the back side metal layer
that the TSV connects to.
measured_to Required parameter that specifies the front metal layer that
the TSV connects to.
radius Required parameter that specifies the radius of the TSV.
hollow_radius Required parameter that specifies the radius of the hollow
area of the TSV.
height Required parameter that specifies the height of the TSV.
resistivity Required parameter that specifies the resistivity of the TSV
material.
depletion_width Required parameter that specifies the depletion region width.

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uBump

Table 3-33. TSV Parameters (cont.)

TSV Parameters Description
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
top_enclosure Optional parameter that specifies the top enclosure covered
by the metal “to_layer”.
bot_enclosure Optional parameter that specifies the bottom enclosure
covered by the metal “from_layer”.
extra_width Optional parameter that specifies the extra-width of side walls
for the tapered style TSV.
insulator Optional parameter that specifies one or more insulators for
the TSVs in the process. Each insulator is described by a
thickness and dielectric constant pair.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

uBump
The optional ubump keyword defines the connection between the back-side metal and a
package.
Figure 3-6 shows a uBump.

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uBump

Figure 3-6. uBump

Table 3-34 describes the syntax for the uBump keyword.

Table 3-34. uBump Keyword

uBump Keyword Description
ubump Required syntax used to define a uBump layer.
layer_name Required user specified name that identifies the layer.

Table 3-35 lists the uBump parameters.

Table 3-35. uBump Parameters

uBump Parameters Description
measured_from Required parameter that specifies the bottom layer that the
uBump connects to.
measured_to Required parameter that specifies the top layer that the
uBump connects to.
min_width Required parameter that specifies the minimum allowed metal
width of the ubump.
mid_width Required parameter that specifies the middle metal width of
the ubump.

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Pad

Table 3-35. uBump Parameters (cont.)

uBump Parameters Description
enclosure_down Required parameter that specifies enclosure with respect to a
lower conductor.
enclosure_up Required parameter that specifies enclosure with respect to an
upper conductor.
resistivity Required parameter that specifies the resistivity of the ubump
material.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Pad
The pad layer is an optional layer type used to define electrical and physical characteristics of
conducting layers that have no routing, and are square or round in shape.
Table 3-36 describes the syntax for the pad keyword.

Table 3-36. Pad Keyword

Conductor Keyword Description
pad Required syntax used to define a conductor layer that has no
routing.
layer_name Required user specified name that identifies the layer.

Table 3-37 lists the pad parameters.

Table 3-37. Pad Parameters

Pad Parameters Description
thickness Required parameter that specifies the thickness of the
conductor layer in the z-direction.
min_width Required parameter that specifies the minimum drawn width
of conductor for this layer.
min_spacing Required parameter that specifies the minimum allowed
drawn spacing between conductors on this layer.
resistivity Required if r_sheet parameter is not defined, this parameter
specifies the nominal metal resistance for this layer.

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Pad

Table 3-37. Pad Parameters (cont.)

Pad Parameters Description
r_sheet Required if resistivity parameter is not defined for the layer,
this parameter specifies the nominal metal resistance for this
layer. This value may be specified as resistivity (rho) or sheet
resistance (rsh).
metal_fill Optional parameter that specifies a set of values enclosed in
braces used to define virtual fill parameters.
ztop Optional parameter that specifies the top z-coordinate when
the metal layer is not implicitly placed; that is, the metal layer
is not placed relative to a previous layer’s placement.
zbottom Optional parameter that specifies the bottom z-coordinate
when the metal layer is not implicitly placed; that is, the metal
layer is not placed relative to a previous layer’s placement.
measured_from Optional parameter that specifies the layer name whose top
surface is used as the base from which zbottom is measured.
If measured_from is omitted, zbottom measures from absolute
0.
thickness_type Optional parameter used with measured_from. Either relative
or absolute, specifies how thickness is measured. Default is
absolute.
coplanar_min_spacing Optional keyword that specifies the minimum spacing value
between coplanar layers.
tc1 Optional parameter that specifies the first order temperature
coefficient (TC1) for resistance.
tc2 Optional parameter that specifies the second order
temperature coefficient (TC2) for resistance.
max_rlength Optional parameter that specifies the maximum length of a
wire when calculating how many pieces a resistor should be
broken into for representing in a distributed network.
max_width Optional parameter that specifies the maximum allowed metal
width.
max_spacing Optional parameter that specifies the maximum allowed metal
spacing.
layer_bias Optional parameter that specifies the bias on the edge of metal
objects with respect to the drawn width of this layer.
capacitive_only_etch Optional parameter that specifies the layer bias for
capacitance.
trap_style Optional parameter whose value set as top, middle, or bottom
specifies where the trapezoid measurements are taken from.

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Multigate

Table 3-37. Pad Parameters (cont.)

Pad Parameters Description
extra_width Optional parameter that specifies the extra-width of side walls
for a conductor with a trapezoid shape.
extension Optional parameter that specifies the amount the conductor
layer extends past the diffusion or contact layers. For
diffusion layer, this specifies the amount diffusion extends
past the contact layer.
ronly_layers Optional parameter that specifies a list of r-only layer names.
density_window Optional parameter that specifies a list of values to be applied
to any conductor that has a thickness table.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Multigate
The multigate keyword is used to define a multigate device such as a FinFET. A multigate
device is a MOSFET which incorporates more than one gate into a single device and is
commonly used in microprocessor and memory cell design.
A multigate FinFET is a fin-based transistor with two or more gates built on a substrate.
Figure 3-7 is an example of a multigate FinFET with two gates.

Figure 3-7. Multigate FinFET

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Multigate

Table 3-38 describes the syntax for the multigate keyword.

Table 3-38. Multigate Keyword

Multigate Keyword Description
multigate Required syntax used to define a multigate layer.
layer_name Required user specified name that identifies the layer.

Table 3-39 lists the multigate parameters.

Table 3-39. Multigate Parameters

Multigate Parameters Description
fin_length Required parameter that specifies the length of the fin.
fin_spacing Required parameter that specifies the spacing between
fins.
fin_thickness Required parameter that specifies the thickness of the fin.
fin_width Required parameter that specifies the width of the fin.
gate_oxide_er Required parameter that specifies the permittivity of the
gate oxide.
gate_oxide_side_t Optional parameter that specifies the side thickness of the
gate oxide.
gate_oxide_top_t Required parameter that specifies the top thickness of the
gate oxide.
gate_poly_side_t Optional parameter that specifies the gate poly thickness
between the side of the gate poly and the side of the gate
oxide.
gate_poly_top_t Required parameter that specifies the gate poly thickness
between the top of the gate poly and the top of the gate
oxide.
channel_er Required parameter that specifies the difference in
permittivity of the gate oxide and its lateral side.
gate_diffusion_layer_pair Required parameter that specifies a list of one or more
layer pairs used to define which gate and diffusion layers
can be paired together to describe different device types
with the same device parameters.

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Table 3-39. Multigate Parameters (cont.)

Multigate Parameters Description
rsd_enclosure Optional parameter that specifies raised source/drain edge
bias. See the measurement labeled “Raised OD edge
biasing” in Figure 3-3 in “Diffusion” for details.
rsd_thickness Optional parameter that specifies raised source/drain
height. See the measurement labeled “Raised Height” in
Figure 3-3 in “Diffusion” for details.
rsd_spacing Optional parameter that specifies raised source/drain gate
spacing. See the measurement labeled “Raised OD to Gate
Poly Spacing” in Figure 3-3 in “Diffusion” for details.
trench_contact_extension_length Optional layer parameter that specifies the nominal
extension of the trench contact beyond the diffusion.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

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Substrate Layer Structures

Substrate Layer Structures

Substrate layer structures are used by inductance and substrate extraction. They contain the
layer model for the substrate. Substrate layers are semiconductors, so they may be both
conductors and dielectrics. These layers are not part of the relational conductor stack, but do
require some form of absolute placement and thickness information, such as zbottom and
thickness or zbottom and ztop parameters. Their absolute placement is negative and not allowed
by normal conductor layers, but may be positive for an SOI type process.
Substrate layer types include:

• Well
• Substrate
• Tap

Well
The well keyword is an optional keyword used to define the substrate layer structure. This layer
type may be specified once in the MIPT file. The zbottom and thickness parameters are required
to establish the substrate.
Table 3-40 describes the well keyword.

Table 3-40. Well Keyword

Well Keyword Description
well Required syntax used to define a well layer.
layer_name Required user specified name that identifies the layer.

Table 3-41 lists the well parameters.

Table 3-41. Well Parameters

Well Parameters Description
zbottom Required parameter that specifies the bottom z-coordinate of
the well layer.
thickness Required parameter that specifies the thickness of the well
layer.
resistivity Required parameter that specifies the well layer resistance as
rho, typically greater than or equal to 0.

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Substrate

Table 3-41. Well Parameters (cont.)

Well Parameters Description
eps Required parameter that specifies the relative permittivity
(dielectric constant).
bulk_min_width Optional layer parameter that specifies the minimum width of
the bulk layer.
bulk_resistance Optional layer parameter that specifies the sheet resistance of
the bulk layer.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Substrate
The substrate keyword is an optional keyword used to define the substrate layer. This layer type
may be specified once in the MIPT file. Substrate layers require resistivity, eps, and thickness.
They may not have tables and should not be coplanar with each other or have gaps. The ztop
and zbottom are required to establish the substrate.
Table 3-42 describes the substrate keyword.

Table 3-42. Substrate Keyword

Substrate Keyword Description
substrate Required syntax used to define a substrate layer.
layer_name Required user specified name that identifies the layer.

Table 3-43 lists the substrate parameters.

Table 3-43. Substrate Parameters

Substrate Parameters Description
ztop Required parameter that specifies the top z-coordinate of the
substrate layer.
zbottom Required parameter that specifies the bottom z-coordinate of
the substrate layer.
resistivity Required parameter that specifies the substrate layer
resistance as rho, typically greater than or equal to 0.
eps Required parameter that specifies the relative permittivity
(dielectric constant).

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Tap

Table 3-43. Substrate Parameters (cont.)

Substrate Parameters Description
bulk_min_width Optional layer parameter that specifies the minimum width of
the bulk layer.
bulk_resistance Optional layer parameter that specifies the sheet resistance of
the bulk layer.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

Tap
The tap keyword is an optional keyword used to connect power and ground nets to the substrate.
This layer type may be specified once in the MIPT file. The vertical and lateral resistance is
modeled. Tap layers require the parameters for thickness and resistivity. They have placement
information defined relative to the top of the substrate. This information is not used for
capacitance calculations in Calibre xRC or Calibre xACT 3D. The ztop and zbottom parameters
are required.
Table 3-44 describes the tap keyword.

Table 3-44. Tap Keyword

Tap Keyword Description
tap Required syntax used to define a tap layer.
layer_name Required user specified name that identifies the layer.

Table 3-45 lists the tap parameters.

Table 3-45. Tap Parameters

Tap Parameters Description
ztop Required parameter that specifies the top z-coordinate of the
tap layer.
zbottom Required parameter that specifies the bottom z-coordinate of
the tap layer.
resistivity Required parameter that specifies the tap layer resistance as
rho, typically greater than or equal to 0.
bulk_min_width Optional layer parameter that specifies the minimum width of
the bulk layer.

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Tap

Table 3-45. Tap Parameters (cont.)

Tap Parameters Description
bulk_resistance Optional layer parameter that specifies the sheet resistance of
the bulk layer.
hidden Optional layer parameter that controls whether or not the
layer is encrypted in the calibrated rule files.

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Process Variation

Process Variation
Process variation is due to many systematic and random factors including:
• Design related factors such as the design pattern and homogeneity of interconnect
density.
• Process related factors such as manufacturing imperfections.
There are multiple manufacturing steps that cause process variation such as optical, etch, and
polishing. This can significantly affect parametric yield, thus the impact on parasitics must be
accurately predicted. The effects of systematic variations on conductor dimensions such as
width and thickness, are estimated using simplified equations, tables, or models.

Various foundries have different emphasis on what to model, as well as different formats to
provide variation data. Typical inputs provided by the foundries include the width, thickness,
and interconnect resistivity variations. Via dimension and resistivity variation, and temperature
coefficient variation dependent on conductor width are provided.

Thickness Variation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Retargeting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Multiple Width Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Gate Fringe Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Table Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88

Thickness Variation
Thickness variation is due to chemical mechanical polishing (CMP), reactive ion etch (RIE), or
micro loading effect. Chemical mechanical polishing causes dishing and erosion on the tops of
conductors. Therefore, top thickness variation depends on conductor width, spacing, and
density. Reactive ion etch and micro loading effect affect the bottom of the conductor.
Consequently, bottom thickness variation depends on conductor width, spacing and density.
Figure 3-8. Chemical Mechanical Polishing

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MIPT File Elements
Thickness Variation

Thickness varies as a function of:

• density in one or more specified windows.

• conductor width.
• spacing to neighbors.
Thickness variation is specified by one of the following:

• polynomial equations as a function of conductor width and density.

• thickness tables as a function of conductor width and spacing.
• output of CMP and Etch simulation.
When using Table Syntax, different variation tables are needed for capacitance and resistance
calculations. Capacitance depends on the conductor side dimensions, while resistance depends
on conductor cross section, or effective thickness and width. Use THICKNESS Table to define
actual thickness for a conducting layer.

To calculate actual thickness, Ttotal, use the following equation:

Ttotal = Tnominal + Ttop + Tbottom

Nominal thickness, Tnominal, is the desired thickness of the conducting layer unaffected by CMP
or RIE. Top thickness, Ttop, is the thickness variation due to CMP. Use THICKNESS_TOP
table to define top thickness for a layer. Bottom thickness, Tbottom, is thickness variation due to
RIE. Use THICKNESS_BOT table to define bottom thickness for a layer. See
THICKNESS_TOP and THICKNESS_BOT Tables for syntax.

Figure 3-9. Thickness Variations

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 MIPT File Elements
Retargeting

Retargeting
Retargeting is method used to apply various effects to conducting layers at different
orientations. Width variation is supported in MIPT, where actual width is based on drawn width
and spacing. Metal variation depends on the orientation of the wire. This requires an orientation
dependent width variation feature in extraction.
Figure 3-10 illustrates the width variation for the horizontal and vertical orientations of a 41 nm
wide isolated Mx wire. Two wires with the same width of 41nm become 70nm and 51nm wide
during manufacturing, since they are at different orientations.

Figure 3-10. Orientation-based Width Variation

In order to support orientation-based biasing, two width tables are needed for each direction, x
and y. One to describe the actual width in the preferred direction and another to describe the
actual width in the non-preferred direction.

The bias_type parameter specified for the layer in your MIPT file designates whether the table
is preferred or nonpreferred. This parameter may only be used with two-dimensional width or
multi_bias property tables. For more information on multi_bias property tables, see
MULTI_BIAS Table. For an example on how to define a multiple width table using table
syntax, see “Multiple Width Table Example” on page 110.

Multiple Width Tables

The multiple width tables are used for advanced OPC modeling and calibration. The tables
describe a final delta width variation. In this case, spacing refers to edge-based spacing.
The diagram in Figure 3-11 describes how the drawn width and drawn spacing are obtained
from the GDS. The first table applies the width bias or delta w to the drawn width. Width bias is
a function of drawn width and drawn spacing. During calibration the tool calculates the new
adjusted values for w and s. The second table then applies a second bias delta w’ to the adjusted

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MIPT File Elements
Gate Fringe Capacitance

width, which will result in the final width adjustment that is used for extraction. Delta w’ is a
function of the adjusted width and spacing.

Figure 3-11. Drawn Width and Spacing for Multiple Width Tables

The MULTI_BIAS Table must be specified together with a RHO_T Table and a thickness table
type in your MIPT file in order to get accurate results. Thickness table type refers to thickness,
thickness_top, and thickness_bot syntax. See THICKNESS Table and THICKNESS_TOP and
THICKNESS_BOT Tables for more information. See “Multiple Width Table Example” on
page 110for an example on how to define a multiple width table using table syntax.

Gate Fringe Capacitance

The capacitance fringe scaling table applies to gate layers only. The gate or capacitance fringe
(CF tables) are provided by the foundry and are used to adjust the gate to source-drain (S/D)
capacitance by adding or subtracting the capacitance values provided in the CF tables.
By default, the capacitance values from the CF tables are added to the source-drain capacitance.
To subtract the CF table values from the gate to source-drain capacitance during gate to
diffusion capacitance extraction, set the GATE_FRINGE Table parameter ignore_gate_to_diff
to no.

The gate to source/drain capacitance consists of three components as shown in Figure 3-12:

• gate to metal1
• gate to contact
• gate to diffusion

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Gate Fringe Capacitance

Figure 3-12. Gate to S/D Capacitance of a planar MOS

Gate to diffusion capacitance depends on the gate-to-contact spacing and contact-to-contact

spacing as shown in Figure 3-13. The larger the distance between a gate and contact, the larger
the gate-to-diffusion capacitance. Gate-to-diffusion capacitance also increases with contact-to-
contact spacing.

Figure 3-13. Gate to Diffusion Capacitance

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Table Syntax

Table Syntax
Tables provide a unified way to input process variation information into xCalibrate.
Tables are typically specified in-line in the MIPT file, but can also be referenced using the use
keyword. Providing the table data in-line avoids having to keep track of multiple files for a
calibration. See Use Directive for more information on the use keyword.

Layout data contains shapes that are at desired or drawn dimensions. The actual width of each
conductor varies from drawn dimension due to deterministic process variation. For example, the
actual width of a metal path may be more narrow than the drawn width.

The on-chip variation effects can be modeled in Calibre xRC. This tool uses the variation data
described by tables of discrete values in the MIPT file. Local density, width, and spacing data
are used to make adjustments to the drawn shapes. The adjusted shapes are used when
calculating parasitic effects. Some foundries also supply loading effects in their in-die
information in order to model the changes in conductor thickness after reactive ion-etching.

Tables can be defined for any supported process variation parameter such as width, thickness,
sheet resistance, resistivity, temperature coefficients tc1 and tc2, gate fringe, and contact bias.

You can specify tables to be resistive (R), capacitive (C), or both (RC). Each type of table has a
default setting. The user must specify what type of table property information is stored. If a
table applies only to resistance, such as RSH, then specifying it to be a C or RC table will
generate an error message.

Most table data is specified as DRAWN dimensions (dim_type = drawn). Some data can be
specified in ACTUAL dimensions, by setting dim_type = actual in the table.

Tables specified in-line are always associated with a layer. A layer may have zero or more
tables associated with it. The order of the tables within a layer is not relevant. Tables are
supported for layer types:

• Conductor
• Poly
• Diffusion
• Contact
• Via
For dielectric layers, inter- and intra-layer dielectric thickness are adjusted automatically during
calibration based on the conductor thickness variation. So no table support is needed for
dielectric layers.

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Table Syntax

Each table type is associated with a specific set of ordered variables. A one dimensional table
has a single variable. When a table is used to describe a parameter, such as tc1, that singleton
parameter is no longer required in the layer definition since it has a table representation.

A one dimensional table syntax is:

table = table_reference_name {
property = table_property
table_type = {R | C | RC}
dim_type = {drawn | actual}
value_type = {absolute | delta}
equation = {<equation to evaluate, optional>}
variable1 = {w1 w2 ... wn}
value = {v(w1) v(w2) ... v(wn) }
}

Two dimensional table syntax has two variables:

table = table_reference_name {
property = table_property
table_type = {R | C | RC}
dim_type = {drawn | actual}
value_type = {absolute | delta}
bias_type = {preferred | nonpreferred}
equation = {<equation to evaluate, optional>}
variable1 = {w1 w2 ... wn}
variable2 = {s1 s2 ... sn}
value = { v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}

Table 3-46 describes the Table keyword.

Table 3-46. Table Keyword

Table Keyword Description
table Required keyword used to define a table construct.
table_reference_name Required user specified name that identifies the structure.

Table 3-47 lists the Table parameters.

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Table Syntax

Table 3-47. Table Parameters

Table Parameters Description
property Required keyword whose value specifies the property type
of the table. See Table 3-48 for a complete list of valid
table property types.
table_type Required keyword whose value specifies the type of table
being described. Must be either R, C, or RC.
dim_type Required keyword whose value specifies the type of
dimensions being used. Must be either drawn or actual.
value_type Required keyword whose value specifies the type of values
being used. Must be either absolute or delta.
bias_type Optional keyword whose value specifies whether the table
describes the actual width in the preferred or non-preferred
direction. Must be defined as either preferred or
nonpreferred. Can only be used in two-dimensional width
or multi_bias property tables.
equation Optional keyword whose value specifies an equation to
evaluate in the table structure.
variable Required value that specifies the type of values being used.
See Table 3-49 which lists the available variable keywords
and their unit value.
value Required keyword whose value specifies the values applied
to the associated variable in the table definition. Values
supplied must be either absolute or delta to match the
value_type setting.

Table Property . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
WIDTH Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
VWIDTH and VLENGTH Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
VRESISTANCE Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
THICKNESS Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
THICKNESS_TOP and THICKNESS_BOT Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
GATE_FRINGE Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
GATE_FRINGE4 Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
RSH Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
RSH_T Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
RHO Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
RHO_T Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
RESISTANCE Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
TC1 and TC2 Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
CONTACT_WIDTH Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103

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CONTACT_BIAS Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103

LI_GATE_FRINGE Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
LI1_WIDTH and LI2_WIDTH Table Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
MULTI_BIAS Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
DIELECTRIC_CONSTANT Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
EXTRA_WIDTH Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
SIDEWALL_K Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Variable Keywords . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108

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Table Syntax

Table Property
The property parameter defines the table’s property. The table_type is required and must be
either R, C, or RC. If both are present, the table is applied to both resistance and capacitance.
Not every keyword is supported with every table type. For example, if the R keyword is
specified with a capacitance table, then an error message is generated and calibration will stop.
Foundry modeling teams derive table data from silicon process technology test chips to support
the table property content. For example, in conducting layer definitions there are four table
property types that can be used for modeling resistance. Listed in order of precedence they are
rho_t, rho, rsh_t, and rsh. For thickness dependent data they would define either a rho_t or a
rsh_t table, otherwise they would define a rho or a rsh table.

Note
Tables of RESISTANCE property type are only allowed for via and contact layers.

Table 3-48 shows which options are available for each table property. It also identifies which
properties can be in drawn or actual dimensions, or both, and what value type setting should be
used.

Table 3-48. Available Table Property Types

Table Property Table Type Dimension Type Value Type
R C RC Drawn Actual Absolute Delta
WIDTH Y Y Y Y N Y N
MULTI_BIAS Y Y Y Y N N Y
VWIDTH N Y Y Y N Y N
VLENGTH N Y Y Y N Y N
VRESISTANCE Y N N Y N Y N
THICKNESS Y Y Y Y Y Y N
THICKNESS_TOP Y Y Y Y Y N Y
THICKNESS_BOT Y Y Y Y Y N Y
GATE_FRINGE N Y N Y N Y N
GATE_FRINGE4 N Y N Y N Y N
RSH Y N N Y Y Y N
RSH_T Y N N N Y Y N
RHO Y N N Y N Y N
RHO_T Y N N N Y Y N

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Table 3-48. Available Table Property Types (cont.)

Table Property Table Type Dimension Type Value Type
R C RC Drawn Actual Absolute Delta
RESISTANCE Y N N Y N Y N
TC1 Y N N Y N Y N
TC2 Y N N Y N Y N
CONTACT_WIDTH N Y N Y N Y N
CONTACT_BIAS N Y N Y N Y N
LI_GATE_FRINGE N Y N Y N Y N
LI1_WIDTH N Y N Y N Y N
LI2_WIDTH N Y N Y N Y N
DIELECTRIC_CONSTANT N Y N Y N Y N
EXTRA_WIDTH Y Y Y Y Y Y Y
SIDEWALL_K N Y N Y N Y N

For information on the variables used for each table see Variable Keywords.

The following sections provide information on the table syntax for the available table property
types:

WIDTH Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
VWIDTH and VLENGTH Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
VRESISTANCE Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
THICKNESS Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
THICKNESS_TOP and THICKNESS_BOT Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
GATE_FRINGE Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
GATE_FRINGE4 Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
RSH Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
RSH_T Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
RHO Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
RHO_T Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
RESISTANCE Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
TC1 and TC2 Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
CONTACT_WIDTH Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
CONTACT_BIAS Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103

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LI_GATE_FRINGE Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104

LI1_WIDTH and LI2_WIDTH Table Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
MULTI_BIAS Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
DIELECTRIC_CONSTANT Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
EXTRA_WIDTH Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
SIDEWALL_K Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106

WIDTH Table
A width table uses width and spacing variable types. Width table entries for value are absolute
values applied to the variation property, a positive floating point number in microns.
The following is width table syntax:

table = my_width_table {
property = width
table_type = { R | C | RC}
dim_type = drawn
value_type = absolute
bias_type = {preferred | nonpreferred}
width = {w1 w2 ... wn}
spacing = {s1 s2 ... sn}
value = { v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn) }
}

VWIDTH and VLENGTH Tables

Use vwidth and vlength tables together to specify square or rectangular vias. Vwidth and
vlength tables use width and length variable types. The width and length values are drawn
dimensions. Value entries are actual dimensions. For rectangular vias, use the longer dimension
for vlength.

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The following is vwidth and vlength table syntax:

table = my_vwidth_table {
property = vwidth
table_type = { C | RC}
dim_type = drawn
value_type = absolute
width = {w1 w2 ... wn} #variable1
length = {l1 l2 ... ln} #variable2
value = { v(w1,l1) v(w1,l2) ... v(w1,ln),
...,
v(wn,l1) v(wn,l2) ... v(wn,ln) }
}

table = my_vlength_table {
property = vlength
table_type = {C | RC}
dim_type = drawn
value_type = absolute
width = {w1 w2 ... wn} #variable1
length = {l1 l2 ... ln} #variable2
value = { v(w1,l1) v(w1,l2) ... v(w1,ln),
...,
v(wn,l1) v(wn,l2) ... v(wn,ln) }
}

VRESISTANCE Table
Use a vresistance table to specify contact or via resistance. A vresistance table uses width and
length variable types. The width and length values are drawn dimensions. Use this table type for
vias and contacts that are not square. The vresistance table takes precedence over the
specification of n1 and n2 parameters.
The following is vresistance table syntax:

table = my_vresistance_table {
property = vresistance
table_type = R
dim_type = drawn
value_type = absolute
width = {w1 w2 ... wn}
length = {l1 l2 ... ln}
value ={v(w1,l1) v(w1,l2) ... v(w1,ln),
...,
v(wn,l1) v(wn,l2) ... v(wn,ln)}
}

THICKNESS Table
Use a thickness table to specify the total thickness due to all effects for a layer.

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This includes the measurements for nominal, top, and bottom thickness as shown in Figure 3-9
in “Thickness Variation”. Total thickness is represented by the following equation:

Ttotal = Tnominal + Ttop + Tbot

Thickness tables can be varied as a function of width and spacing, or width and density.
Translation from density to spacing uses the equation:

density = width/(width+spacing)

then

spacing = width*((1-density)/density)

Thickness table cannot exist together with thickness_top table for the same layer; however, they
can exist together in the same mipt file as long as they are specified for different layers. When
specifying thickness tables, use either width/spacing tables or width/density tables but not a
combination of both.

The width and spacing values can be drawn or actual dimensions. The values are the absolute
thickness value for a given width/spacing pair. Values are a floating point number in microns.

The following is thickness table syntax as a function of width and spacing:

table = my_thickness_spacing_table {
property = thickness
table_type = {R | C | RC}
dim_type = {drawn | actual}
value_type = absolute
width = {w1 w2 ... wn}
spacing = {s1 s2 ... sn}
value = {v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}

or as a function of width and density:

table = my_thickness_density_table {
property = thickness
table_type = {R | C | RC}
dim_type = {drawn | actual}
value_type = absolute
width = {w1 w2 ... wn}
density = {d1 d2 ... dn}
value = {v(w1,d1) v(w1,d2) ... v(w1,dn),
...,
v(wn,d1) v(wn,d2) ... v(wn,dn)}
}

For more information on total thickness, see “Thickness Variation” on page 83.

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THICKNESS_TOP and THICKNESS_BOT Tables

Thickness_top and thickness_bot tables can exist together, be specified individually, or not at
all. When specifying both thickness_top and thickness_bot tables, use either width/spacing
tables or width/density tables but not a combination of both.
The width and spacing values can be drawn or actual dimensions. The values are the delta
changes in thickness_bot or thickness_top that correspond to a given width/spacing pair. The
values are positive when the top edge of the conductor moves up and the bottom of the
conductor moves down, for example, when the overall thickness of the conductor increases. The
values are negative when the top edge moves down and the bottom edge moves up, for example,
when the overall thickness of the conductor decreases. Values are a floating point number in
microns.

Thickness tables are varied as a function of width and spacing:

table = my_thickness_top_spacing_table {
property = thickness_top
table_type = {R | C | RC}
dim_type = {drawn | actual}
value_type = delta
width = {w1 w2 ... wn}
spacing = {s1 s2 ... sn}
value = {v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}

table = my_thickness_bot_spacing_table {
property = thickness_bot
table_type = {R | C | RC}
dim_type = {drawn | actual}
value_type = delta
width ={w1 w2 ... wn}
spacing = {s1 s2 ... sn}
value = {v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}

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or as a function of width and density:

table = my_thickness_top_density_table {
property = thickness_top
table_type = {R | C | RC}
dim_type = {drawn | actual}
value_type = delta
width = {w1 w2 ... wn}
density = {d1 d2 ... dn}
value = {v(w1,d1) v(w1,d2) ... v(w1,dn),
...,
v(wn,d1) v(wn,d2) ... v(wn,dn)}
}

table = my_thickness_bot_density_table {
property = thickness_bot
table_type = {R | C | RC}
dim_type = {drawn | actual}
value_type = delta
width = {w1 w2 ... wn}
density = {d1 d2 ... dn}
value = {v(w1,d1) v(w1,d2) ... v(w1,dn),
...,
v(wn,d1) v(wn,d2) ... v(wn,dn)}
}

GATE_FRINGE Table
A gate_fringe table defines variables co_co_spacing and gate_co_spacing. The gate_fringe
table entries for value are absolute values applied to the variation property, a positive floating
point number in femtofarads. The gate_fringe table may consist of a single value if that is what
corresponds to the spice device model.
Specify different gate_fringe tables for different MOS transistor types. Use gate_fringe tables to
specify the fringe capacitance (CF) values.

The ignore_gate_to_diff variable setting determines whether the CF values are added or
subtracted from the extracted gate to S/D capacitance value. If ignore_gate_to_diff is yes, the
CF values are added; this is the default. If ignore_gate_to_diff is no, the CF values are
subtracted.

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The following is the gate_fringe table syntax:

table = my_gate_fringe_table {
property = gate_fringe
table_type = C
dim_type = drawn
value_type = absolute
ignore_gate_to_diff = yes | no
co_co_spacing = {c1 c2 ... cn}
gate_co_spacing = {g1 g2 ... gn}
value = {v(c1,g1) v(c1,g2) ... v(c1,gn),
v(c2,g1) v(c2,g2) ... v(c2,gn),
...,
v(cn,g1) v(cn,g2) ... v(cn,gn)}
}

GATE_FRINGE4 Table
A gate_fringe4 table defines variables co_co_spacing, gate_co_spacing, gate_width, and
gate_length. The gate_fringe4 table entries for value are absolute values applied to the variation
property, a positive floating point number in femtofarads. The gate_fringe4 table may consist of
a single value if that is what corresponds to the spice device model.
Specify different gate_fringe4 tables for different MOS transistor types. Use gate_fringe4 tables
to specify the fringe capacitance (CF) values that require gate width and gate length detail.

The ignore_gate_to_diff variable setting determines whether the CF values are added or
subtracted from the extracted gate to S/D capacitance value. If ignore_gate_to_diff is yes, the
CF values are added; this is the default. If ignore_gate_to_diff is no, the CF values are
subtracted.

The following is the gate_fringe4 table syntax:

table = my_gate_fringe_table {
property = gate_fringe4
table_type = C
dim_type = drawn
value_type = absolute
ignore_gate_to_diff = yes | no
co_co_spacing = {c1 c2 ... cn}
gate_co_spacing = {g1 g2 ... gn}
gate_width = {w1 w2 ... wn}
gate_length = {l1 l2 ... ln}
value = {v(c1,g1,w1,l1) v(c1,g1,w1,l2) ... v(c1,g1,w1,ln),
v(c1,g1,w2,l1) v(c1,g1,w2,l2) ... v(c2,g1,wn,ln),
...,
v(cn,gn,w1,l1) v(cn,gn,w1,l2) ... v(cn,gn,wn,ln)}
}

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RSH Table
An RSH table must define variables width and spacing. However, an actual dimension RSH
table does not depend on spacing. Specify dummy values for spacing when defining an actual
dimension RSH table. If the dim_type is drawn, then drawn values are used for spacing.
RSH table entries for value are absolute values applied to the variation property. These are
positive floating point numbers in ohms per square.

The following is RSH table syntax:

table = my_rsh_table {
property = rsh
table_type = R
dim_type = {drawn | actual}
value_type = absolute
width = {w1 w2 ... wn}
spacing = {s1 s2 ... sn}
value = {v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}

Resistance can be modeled by specifying the r_sheet parameter or by defining an rsh table for
the layer. When resistance (R) is modeled with an rsh table and a width table with its table_type
keyword set to R or RC is specified for the layer, the width table is not used for computing
resistance.

RSH_T Table
For rsh_t define variables width and thickness. RSH_T table entries for value are absolute
values applied to the variation property, a positive floating point number in ohms per square.
Use an rsh_t table when the resistance data is thickness dependent.
The following is rsh_t table syntax:

table = my_rsh_t_table {
property = rsh_t
table_type = R
dim_type = actual
value_type = absolute
width = {w1 w2 ... wn}
thickness = {t1 t2 ... tn}
value = {v(w1,t1) v(w1,t2) ... v(w1,tn),
...,
v(wn,t1) v(wn,t2) ... v(wn,tn)}
}

Resistance can be modeled by specifying the r_sheet parameter or by defining an rsh_t table for
the layer. When resistance (R) is modeled with an rsh_t table and a width table with its

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table_type keyword set to R or RC is specified for the layer, the width table is not used for
computing resistance.

RHO Table
For rho table property define variables width and spacing. The rho table entries for value are
absolute values applied to the variation property, a positive floating point number in ohm-
microns.
The following is rho table syntax:

table = my_rho_table {
property = rho
table_type = R
dim_type = drawn
value_type = absolute
width = {w1 w2 ... wn}
spacing = {s1 s2 ... sn}
value = {v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}

Resistance can be modeled by specifying the resistivity parameter or by defining an rho table
for the layer. When resistance (R) is modeled with an rho table and a width table with its
table_type keyword set to R or RC is specified for the layer, the width table is used for
computing resistance.

RHO_T Table
For rho_t define variables width and thickness. The rho_t table entries for value are absolute
values applied to the variation property, a positive floating point number in ohm-microns. Use
the rho_t table when the resistance data is thickness dependent.
The following is rho_t table syntax:

table = my_rho_t_table {
property = rho_t
table_type = R
dim_type = actual
value_type = absolute
width = {w1 w2 ... wn}
thickness = {t1 t2 ... tn}
value = {v(w1,t1) v(w1,t2) ... v(w1,tn),
...,
v(wn,t1) v(wn,t2) ... v(wn,tn)}
}

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Resistance can be modeled by specifying the resistivity parameter or by defining an rho_t table
for the layer. When resistance (R) is modeled with an rho_t table and a width table with its
table_type keyword set to R or RC is specified for the layer, the width table is used for
computing resistance.

RESISTANCE Table
Resistance table should only be specified for via or contact layers. It is area based to handle
square vias and contacts. Resistance table entries for value are absolute values applied to the
variation property. Resistance is a positive floating point number in ohms per contact.
If a TC1 table is specified, then a resistance table must also exist. If TC1 and TC2 tables are
specified, there must also be a resistance specification for that layer. A resistance table can be
used without TC1 and TC2.

The following is resistance table syntax:

table = my_resistance_table {
property = resistance
table_type = R
dim_type = drawn
value_type = absolute
area = {a1 a2 ... an}
value = {r1 r2 r3 ... rn}
}

TC1 and TC2 Tables

For conductor layers, TC1 and TC2 may be specified without a resistance table. When
specifying TC1 tables for via layers, a resistance table must also be defined. If TC1 and TC2
tables are specified, there must also be a resistance specification for the via layer. For both
conductor and via layers, you can specify a TC1 table without a TC2 table. But, you cannot
specify a TC2 table without a TC1 table. Actual TC1 and TC2 can be used together with actual
rsh_t and rho_t tables.
TC1 and TC2 table entries for the value parameter are absolute values and applied to the
variation property. The values are floating point numbers in microns.

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The following is tc1 and tc2 table syntax:

table = my_tc1_table {
property = tc1
table_type = R
dim_type = drawn
value_type = absolute
width = {w1 w2 w3 ... wn}
value = {tc11 tc12 tc13 ... tc1n}
}

table = my_tc2_table {
property = tc2
table_type = R
dim_type = drawn
value_type = absolute
width = {w1 w2 w3 ... wn}
value = {tc21 tc22 tc23 ... tc2n}
}

CONTACT_WIDTH Table
For contact_width define variables co_co_spacing and gate_co_spacing. Contact_width table
entries for value are absolute values applied to the variation property, a floating point number in
microns. Contact_width tables are associated with gate layers.
The following is contact_width table syntax:

table = my_contact_width_table {
property = contact_width
table_type = C
dim_type = drawn
value_type = absolute
co_co_spacing = {c1 c2 ... cn}
gate_co_spacing = {g1 g2 ... gn}
value = {v(c1,g1) v(c1,g2) ... v(c1,gn),
v(c2,g1) v(c2,g2) ... v(c2,gn),
...,
v(cn,g1) v(cn,g2) ... v(cn,gn)}
}

CONTACT_BIAS Table
For contact_bias define variables width and spacing. Used for capacitance, BIAS values may be
positive, negative or zero, and are associated with contact or via layers.

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The following is contact_bias table syntax:

table = my_contact_bias_table {
property = contact_bias
table_type = C
dim_type = drawn
value_type = absolute
width = {w1 w2 ... wn}
spacing = {s1 s2 ... sn}
value = {v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}

LI_GATE_FRINGE Table
The li_gate_fringe defines the table for local interconnect capacitance.
If li1 and li2 variables represent percentage values, then the variable values should be within the
range [0..1]. If li1 and li2 variables represent drawn values, then the variable values should be
positive floating point values.

The following is li_gate_fringe table type syntax:

table = my_li_gate_fringe_table {
property = li_gate_fringe
table_type = C
dim_type = {drawn | percentage}
value_type = absolute
li1 = {li11 li12}
li2 = {li21 li22}
value = {v(li11,li21) v(li11,li22)
v(li12,li21) v(li12,li22)}

LI1_WIDTH and LI2_WIDTH Table Types

The li1_width and li2_width define tables for local interconnect capacitance.
If li1 and li2 variables represent percentage values, then the variable values should be within the
range [0..1]. If li1 and li2 variables represent drawn values, then the variable values should be
positive floating point values.

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The following is for li1_width and li2_width table type syntax:

table = my_li1_width_table {
property = li1_width
table_type = C
dim_type = {drawn | percentage}
value_type = absolute
li1 = {li11 li12}
li2 = {li21 li22}
value = {v(li11,li21) v(li11,li22)
v(li12,li21) v(li12,li22)}
}

table = my_li2_width_table {
property = li2_width
table_type = C
dim_type = {drawn | percentage}
value_type = absolute
li1 = {li11 li12}
li2 = {li21 li22}
value = {v(li11,li21) v(li11,li22)
v(li12,li21) v(li12,li22)}
}

MULTI_BIAS Table
For multi_bias type a two sets of variables and values is allowed. The values are the delta
changes. BIAS values may be positive, negative or zero. This table type must be used with a
rho_t table and a thickness table.
The following is multi_bias table syntax:

table = my_multi_bias_table {
property = multi_bias
table_type = {R | C | RC}
dim_type = drawn
value_type = delta
bias_type = {preferred | nonpreferred}
width1 = {w1 w2 ... wn}
spacing1 = {s1 s2 ... sn}
value1 = {v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
width2 = {w1 w2 ... wn}
spacing2 = {s1 s2 ... sn}
value2 = {v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}

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DIELECTRIC_CONSTANT Table
The dielectric_constant table defines the properties of width-spacing dependent conformal
dielectric layer for gate geometries.
The following is dielectric_constant table type syntax:

table = my_dielectric_constant_table {
property = dielectric_constant
table_type = C
dim_type = drawn
value_type = absolute
li_layer = M0
gate_width = {w1 w2 ... wn}
gate_to_li_spacing = {s1 s2 ... sn}
value = {v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}

EXTRA_WIDTH Table
An EXTRA_WIDTH table can be used to specify varying extra width values for side walls
based on width and spacing for a conductor with a trapezoid shape.
EXTRA_WIDTH table must define variables width and spacing. If the dim_type is actual, then
actual values are used for spacing. If the dim_type is drawn, then drawn values are used for
spacing. The table entries for value can be absolute or delta values applied to the variation
property. These are positive floating point numbers.

The following is EXTRA_WIDTH table syntax:

table = my_extra_width_table {
property = extra_width
table_type = R | C | RC
dim_type = {drawn | actual}
value_type = absolute | delta
width = {w1 w2 ... wn}
spacing = {s1 s2 ... sn}
value = {v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}

SIDEWALL_K Table
The sidewall_k table defines the side wall dielectric constant changes for various spacing.
Use this table type to appropriately adjust the dielectric constants and account for the mask
offsets. Specify the corners (DP) that the table applies to with the corners variable keyword.

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Specify the dielectric constants (dc) for various spacing for each corner with a corresponding
value list.

The following is sidewall_k table type syntax:

table = my_sidewall_k_table {
property = sidewall_k
table_type = C
dim_type = drawn
value_type = absolute
corners = {DP1 DP2 ... DPn}
width = {w1 w2 ... wn}
spacing = {s1 s2 ... sn}
value1 = {dc11 dc12 dc13 ... dc1n}
value2 = {dc21 dc22 dc23 ... dc2n}
...
valuen = {dcn1 dcn2 dcn3 ... dcnn}
}

Variable Keywords
The variable parameter is a table keyword.
Table 3-49 lists the available variable keywords and their unit value. Following the variable
keyword is a list of values in brackets. The values in this list must be in increasing order from
smallest to largest. These list values define the axis values for the table’s lookups. Values
outside this range are set at the minimum or maximum value listed. Each table can have a
maximum of two variable definitions. If the table bounds are exceeded, use values at the extent
of the table.

Multi-dimensional Table Syntax has two or more variables and corresponding value array. The
order of the values in the array is the same as in the two-dimensional table.

Multiple variable lines can be present in a table. The table entries for value are the absolute or
delta values applied to the variation property. The adjusted data in the value arrays must
conform to the corresponding minimum values defined in the MIPT file. If a bias has been set in
the MIPT file, an error message should be generated if a table has settings that are out of range
according to that bias.

Table 3-49. Variable Keywords

Variable Keyword Value
area Positive increasing floating point number in microns.
width Positive increasing floating point number in microns.
length Positive increasing floating point number in microns.
thickness Positive increasing floating point number in microns.

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Table 3-49. Variable Keywords (cont.)

Variable Keyword Value
spacing Positive increasing floating point number in microns.
width1 Positive increasing floating point number in microns.
spacing1 Positive increasing floating point number in microns.
width2 Positive increasing floating point number in microns.
spacing2 Positive increasing floating point number in microns.
density Positive increasing floating point number in microns less than
or equal to 1.
co_co_spacing Positive increasing floating point number in microns.
gate_co_spacing Positive increasing floating point number in microns.
gate_width Positive increasing floating point number in microns.
gate_length Positive increasing floating point number in microns.
gate_to_li_spacing Positive increasing floating point number in microns.
Minimum spacing between a seed layer and its li layer.
li_layer List of one or more space separated local interconnect layer
names.
li1 If li1 layer exists, value must be 1. If li1 layer does not exist,
value must be 0. Required for all LI table types.
li2 If li2 layer exists, value must be 1. If li2 layer does not exist,
value must be 0. Optional for all LI table types.
corners List of one or more space separated corner names

The required parameter value is the last entry of the table. The table entries for value are the
absolute or delta values applied to the variation property. The end of line character of each line
in the value array must be a comma “,”. The value parameter can be specified as value, value1,
and value2 depending on the type of table. Tables with multiple values will use value1 and
value2.

The adjusted data in the value arrays must conform to the corresponding minimum values
defined in the MIPT file. The adjusted widths must not be smaller than the minimum width for
the layer. The adjusted spacing must not be smaller than the minimum spacing for the layer. If a
bias has been set in the MIPT file, an error message is generated if a table has settings that are
out of range according to that bias.

Table Examples
Various examples are provided to demonstrate table structure usage.

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Width Table Example

This is an example of a width table defined in an MIPT file:

conductor = metal4 {
min_width = 0.1
min_spacing = 0.1
thickness = 0.2
table = m4_width_table {
property = width
table_type = R
dim_type = drawn
value_type = absolute
width = {0.1 0.2 0.25}
spacing = {0.15 0.25 0.5}
value = {0.2 0.3 0.5,
0.2 0.3 0.5,
0.2 0.3 0.5}
}
}

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Multiple Width Table Example

This is an example of a multiple width table defined in an MIPT file:

conductor = metal1 {
thickness = 0.092
min_width = 0.046
min_spacing = 0.046

table = rho_t_table {
property = rho_t
table_type = R
dim_type = actual
value_type = delta
width = {0.065 0.08 0.14}
thickness = {0.04 0.06 0.15 2.5}
value = {0.036 0.032 0.03 0.028,
0.035 0.0318 0.029 0.0278,
0.034 0.0315 0.028 0.0276}
}
table = thickness_top_table {
property = thickness_top
table_type = RC
dim_type = drawn
value_type = delta
width = {0.045 0.08 0.2 2.5}
spacing = {0.045 0.08 0.2 2.5}
value = {0 0.002 0.005 0.006,
0.003 0.004 0.006 0.007,
-0.001 0.001 0.03 0.004,
-0.005 -0.0045 -0.002 0.0001}
}
table = multi_bias_table {
property = multi_bias
table_type = RC
dim_type = drawn
value_type = delta
width1 = {0.045 0.08 0.14 0.2}
spacing1 = {0.045 0.1 0.15 0.25}
value1 = { -0.002 0.004 0.015 0.02,
-0.004 0.002 0.012 0.018,
-0.006 -0.002 0.01 0.016,
-0.01 -0.004 -0.002 -0.002}
width2 = {0.046 0.085 0.2 1.0 3.2}
spacing2 = {0.05 0.1 0.5 2.5}
value2 = { 0.002 0.005 0.01 0.02,
-0.001 0.001 0.008 0.018,
-0.003 -0.001 0.005 0.017,
0.0005 0.0007 0.001 0.0015,
0.002 0.0022 0.0022 0.01}
}
}

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Thickness Table Example

This is an example of a thickness table used to specify the total thickness for a specific layer:

conductor = metal1 {
thickness = 0.092
min_width = 0.046
min_spacing = 0.046

table = metal1_rho_t_table {
property = rho_t
table_type = R
dim_type = actual
value_type = absolute
width = {0.065 0.08 0.14}
thickness = {0.04 0.06 0.15 2.5}
value = {0.036 0.032 0.03 0.028,
0.035 0.0318 0.029 0.0278,
0.034 0.0315 0.028 0.0276}
}

table = metal1_thickness_table {
property = thickness
table_type = RC
dim_type = drawn
value_type = delta
width = {0.045 0.08 0.2 2.5}
spacing = {0.045 0.08 0.2 2.5}
value = {0.092 0.094 0.097 0.098,
0.095 0.096 0.098 0.099,
0.093 0.093 0.122 0.096,
0.097 0.0965 0.094 0.0921}
}

table = metal1_multi_bias_table {
property = multi_bias
table_type = RC
dim_type = drawn
value_type = delta
width1 = {0.045 0.08 0.14 0.2}
spacing1 = {0.045 0.1 0.15 0.25}
value1 = { -0.002 0.004 0.015 0.02,
-0.004 0.002 0.012 0.018,
-0.006 -0.002 0.01 0.016,
-0.01 -0.004 -0.002 -0.002}
width2 = {0.046 0.085 0.2 1.0 3.2}
spacing2 = {0.05 0.1 0.5 2.5}
value2 = { 0.002 0.005 0.01 0.02,
-0.001 0.001 0.008 0.018,
-0.003 -0.001 0.005 0.017,
0.0005 0.0007 0.001 0.0015,
0.002 0.0022 0.0022 0.01}
}
}

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Multiple Via Type Example

This is an example of how to specify multi-via types such as square and rectangular vias using
vwidth and vlength tables defined in an MIPT file.

Given the following via dimensions for Via1:

Drawn dimension Actual dimension

[ width x length ] [ width x length ]

Via1 0.04725 x 0.04725 0.08022 x 0.08022

Via1 0.04725 x 0.12285 0.05145 x 0.12705

In the MIPT file specify the rectangular via using vwidth and vlength tables:

table = vwidth_table {
property = vwidth
table_type = RC
dim_type = drawn
value_type = absolute
width = {0.04725}
length = {0.04725 0.12285}
value = {0.08022 0.05145}
}

table = vlength_table {
property = vlength
table_type = RC
dim_type = drawn
value_type = absolute
width = {0.04725}
length = {0.04725 0.12285}
value = {0.08022 0.12705}
}

Resistance Table For Square and Rectangular Contacts Example

This is an example of how to specify multiple-sized square and rectangular contacts using
vresistance, vwidth, and vlength tables defined in an MIPT file. The vresistance, vwidth, and
vlength tables can also be used in via layer definitions.

The following contact dimensions:

Drawn dimension Actual dimension

[ width x length ] [ width x length ]

contact 0.04725 x 0.04725 0.08022 x 0.08022

contact 0.12285 x 0.12285 0.12705 x 0.12705

112 xCalibrate™ Batch User's Manual, v2016.2

 MIPT File Elements
Table Syntax

can be used to define both square and rectangular contacts with the dimensions:

square contacts: 0.04725 x 0.04725

0.12285 x 0.12285

rectangular contacts: 0.04725 x 0.12285

0.12285 x 0.04725

This is an example of a contact layer defined in an MIPT file:

contact = pcont {
measured_from = p_od
measured_to = m1
max_length = 0
max_area = 0.016
tc1 = 0
tc2 = 0
min_width = 0.03
min_spacing = 0.03
resistance = 363.023
enclosure_down = 0
enclosure_up = 0

table = resistance_table {
property = vresistance
table_type = R
dim_type = drawn
value_type = absolute
width = {0.04725 0.12285}
length = {0.04725 0.12285}
value = {200 190,
190 100}
}

table = vwidth_table {
property = vwidth
table_type = RC
dim_type = drawn
value_type = absolute
width = {0.04725 0.12285}
length = {0.04725 0.12285}
value = {0.08022 0.05145
0.12705 0.12705}
}

table = vlength_table {
property = vlength
table_type = RC
dim_type = drawn
value_type = absolute
width = {0.04725 0.12285}
length = {0.04725 0.12285}
value = {0.08022 0.12705
0.05145 0.12705}
}
}

xCalibrate™ Batch User's Manual, v2016.2 113

MIPT File Elements
Table Syntax

Inner Fringe Capacitance (CFI) Example

Use the ignore_gate_to_diff gate_fringe table parameter to control whether the capacitance
values provided in the CF tables are added to or subtracted from the gate to source-drain
capacitance. The CF values come from the SPICE model parameters. Specify different
gate_fringe tables for different MOS transistor types. The tables can consist of a single value if
that is what corresponds to the SPICE device model.

In the MIPT file, to subtract CF table values from the gate to source-drain capacitance during
gate to diffusion capacitance extraction, set ignore_gate_to_diff table parameter to no. For
example:

seed = my_gate {
thickness = 0.031
min_width = 0.018
min_spacing = 0.060
r_sheet = 55
layer_bias = 0.0063
tc1 = 2.2e-4
tc2 = 0.0
devices = { my_device }
ignore_gate_to_diff = no
top_thickness = 0.014
top_spacing = 0.020
top_enclosure = 0.015
table = my_gate_fringe_table {
property = gate_fringe
table_type = C
dim_type = drawn
value_type = absolute
co_co_spacing = {0.01}
gate_co_spacing = {0.01}
value = {0.08022 0.05145}
} # end table
} # end seed layer definition

114 xCalibrate™ Batch User's Manual, v2016.2

 Chapter 4
MIPT Keyword Dictionary

This chapter contains descriptions for the MIPT keywords and parameters used to create a
MIPT file. These appear in alphabetical order.
airgap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
author . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
background_dielectric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
bias_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
bot_enclosure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
botthk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
bottom_thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
bulk_min_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
bulk_resistance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
calibration_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
cap_unit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
capacitive_only_etch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
channel_er. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
comment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
conductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
cond_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
contact . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
contact_width2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
coplanar_min_spacing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
copy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
corner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
damage_eps. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
damage_thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
date . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
density_window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
depletion_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158

xCalibrate™ Batch User's Manual, v2016.2 115

MIPT Keyword Dictionary

derived. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
derived_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
device_li. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
device_li_layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
dielectric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
diel_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
diffusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
dim_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
distance_unit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
enclosure_down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
enclosure_up. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
eps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
equation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
extension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
extra_width. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
fin_length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
fin_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
fin_thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
fin_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
gate_diffusion_layer_pair . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
gate_oxide_er . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
gate_oxide_side_t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
gate_oxide_top_t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
gate_poly_side_t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
gate_poly_top_t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
gate_to_cont_min_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
gate_to_cont_spacing_min . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
gate_to_LI1_min_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
gate_to_LI2_min_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
gate_to_via_min_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
gate_to_via_spacing_min . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
half_node_scale_factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
height. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210

116 xCalibrate™ Batch User's Manual, v2016.2

 MIPT Keyword Dictionary

hidden . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211
hollow_radius . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
ignore_diff_intrinsic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
ignore_diff_to_diff_under_poly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
ignore_endcap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217
ignore_gate_intrinsic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219
ignore_gate_to_diff . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
ignore_gateext_to_diff . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222
ignore_gateext_to_diff_only . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224
ignore_rsd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226
ignore_rsd_intrinsic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228
inductance_unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 229
insulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230
layer_bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232
layer_name . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233
li . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 234
li_device_model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 238
li_layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
max_area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 241
max_length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 242
max_rlength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243
max_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 244
max_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 245
measured_from . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 246
measured_to . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 247
metal_fill . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
mid_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
min_length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250
min_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 251
min_width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252
mipt_version . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 253
multigate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 254
multigate parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 257
pad . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
parallel_to_gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 262

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MIPT Keyword Dictionary

pcaux . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 263
plate_loading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 268
poly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269
process. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 273
property . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 274
radius. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275
ref_layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277
resistance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 279
resistivity. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280
resistor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 281
ronly_layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285
rsd_enclosure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 287
rsd_spacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 288
rsd_thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 289
r_sheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290
rsh_type. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 291
seed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 292
seed_layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 298
spacings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 299
src_drn . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300
src_drn_contact_layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 304
src_drn_layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 305
substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 307
svrf_verbatim . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 309
swslope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 311
swthk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312
table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 313
table_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315
tap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 316
tc1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 318
tc2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 319
temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320
thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 321
thickness_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 322
top_enclosure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 323

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topthk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 324
trap_style . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 326
trench_contact_extension_length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 327
trim . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 328
TSV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 329
tsv_model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 331
tsv_radius_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 332
ubump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 334
value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 336
value_type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 338
variable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 339
version . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 340
via . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 341
well. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 345
widths . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 347
zbottom . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 348
ztop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350

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MIPT Keyword Dictionary
airgap

airgap
Parameter for layer(s): dielectric
An optional conformal dielectric parameter that specifies the airgap parameters for dielectric
layers. The mingap value is the largest spacing value.
Syntax
airgap = {rectangle | triangle} min_gap (value) spacing (s1 ... sn) width (w1 ... wn)
thickness (t1 ... tn) dist_from_surface (b1 ... bn)
Parameters
• rectangle | triangle
A required parameter that specifies the shape of the airgap.
• min_gap (value)
A required keyword value set that specifies the threshold value for the spacing between
conductors. If the spacing between conductors is less than the min_gap value, then an airgap
(dielectric void) occurs. Conductors further apart than min_gap do not have airgaps. The
value must be enclosed in parentheses.
• spacing (s1 ... sn)
A required keyword value set of floating point values that must be greater than or equal to
zero and enclosed in parentheses. Used to define the spacing between conductors as shown
in Figure 4-1 and Figure 4-2, or the spacing between thin conformal layers with no airgaps
as shown in Figure 4-3 and Figure 4-4. Values must be specified in ascending order.
• width (w1 ... wn)
A required keyword value set of floating point values that must be greater than or equal to
zero and enclosed in parentheses. Used to define the width of the air gap at its base.
• thickness (t1 ... tn)
A required keyword value set of floating point values that must be greater than or equal to
zero and enclosed in parentheses. Used to define the height of the rectangle or triangle.
• dist_from_surface (b1 ... bn)
A required keyword value set of floating point values that must be greater than or equal to
zero and enclosed in parentheses. Used to define the distance to the base of the air gap from
the bottom surface of the dielectric.
Description
The spacing between conductors is shown in Figure 4-1 and Figure 4-2. The spacing between
thin conformal layers with no airgaps is shown in Figure 4-3 and Figure 4-4.

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airgap

Figure 4-1. Rectangular Airgap Parameters

Figure 4-2. Triangular Airgap Parameters

Figure 4-3. Airgap With Thin Conformal Dielectric Layer

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MIPT Keyword Dictionary
airgap

Figure 4-4. Triangular Airgap With Thin Conformal Dielectric Layer

Examples
In the following example, airgaps form at spacings below min_gap (0.3), but no airgaps exist
for spacings larger than min_gap (0.3):

airgap = rectangle min_gap (0.3) spacing (0.15 0.2) width (0.075 0.08)
thickness (0.05 0.06) dist_from_surface (0.04 0.05)

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area

area
Parameter for layer(s): Contact,Via
A required parameter used by contact and via layers that specifies the area of contact in
distance_units squared. This parameter is required if min_width is not specified. The shape of
the contact or via is assumed to be square, with dimensions of sqrt(area) * sqrt(area).
Syntax
area = value
Parameters
• value
A value that specifies the area of contact or via in distance_units squared.
area = min_width * min_width.
Examples
area = 0.25

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MIPT Keyword Dictionary
author

author
Type: Global Parameters
An optional global parameter used to specify the author of the MIPT file and other related
author information. The specified string is added to the beginning of the calibrated rule file
during calibration. This parameter can only be specified once. If it is a single string without
spaces, the quotation marks are not required. If the string is enclosed in quotes, spaces are
allowed.
Syntax
author = author_info
Parameters
• author_info
A string that specifies the author of the MIPT file and other related author information.
Examples
Example 1
author = Matthew_Hogan

Example 2
author = “Matthew Hogan”

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background_dielectric

background_dielectric
Type: Global Parameters
An optional global parameter whose real number or integer value specifies the dielectric
constant (permittivity). It can only be specified once.
Syntax
background_dielectric = value
Parameters
• value
A real number or integer value that specifies the dielectric constant (permittivity). It can
only be specified once. The default is 1.0.
Examples
background_dielectric = -0.5

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MIPT Keyword Dictionary
base

base
Type: Base layer
A layer definition keyword used to define a base reference plane layer.
Syntax
base = layer_name {
thickness = layer_thickness
ztop = top_z-coordinate
zbottom = bottom_z-coordinate
bulk_min_width = value
bulk_resistance = value
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• thickness
A required layer parameter that specifies the thickness of the base layer in the z-direction.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• bulk_min_width
An optional layer parameter that specifies the minimum width of the bulk layer in microns.
• bulk_resistance
An optional layer parameter that specifies the sheet resistance of the bulk layer in ohms.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Description
Part of the layer definition syntax, this layer definition keyword is used to optionally define a
base reference plane layer. The base keyword is followed by an equal sign, a unique user-
specified layer name, and a list of parameters enclosed in required braces. Each parameter must
appear on its own line.

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base

It is possible to have a single base plane or multiple base layers. A single base plane is used to
specify a reference from which all dimensions are defined. Multiple base layers are used in a
technology stack where each base layer definition represents a different possible ground plane
height. For more information on base layers, see Base.

Examples
base = my_base_layer {
thickness = 1
ztop = 0
}

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MIPT Keyword Dictionary
bias_type

bias_type
table structure parameter
An optional table structure parameter used to specify whether the actual width values described
in the table are for the preferred or non-preferred direction. This parameter may only be used in
two-dimensional width or multi_bias property tables.
Syntax
bias_type = preferred | nonpreferred
Parameters
• preferred
A keyword used to specify that the actual width parameters described in this table are for the
preferred direction.
• nonpreferred
A keyword used to specify that the actual width parameters described in this table are for the
non-preferred direction.
Description
An optional table structure parameter that specifies whether the actual width values described in
the table are for the preferred or non-preferred direction.

Both a preferred and a nonpreferred table are required for a particular property in the layer
definition. If one is missing, then calibration stops with the following error:

ERROR: Missing preferred/nonpreferred table for layer layername

Once you have specified the preferred and nonpreferred tables for a given property, additional
tables for that property type are not permitted. For information on orientation-based width
variation see Retargeting.

Examples
Example 1
bias_type = preferred

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bias_type

Example 2
The following is an example of a two dimensional WIDTH table specified with bias_type:

poly = my_poly2 {
thickness = 0.25
table = my_table5 {
property = width
table_type = RC
dim_type = drawn
value_type = absolute
bias_type = preferred
width1 = {0.027 0.045 0.068 0.125 0.2 0.5}
spacing1 = {0.072 0.081 0.09 0.135 0.18 0.3 0.4 0.6 1.2}
value1 = {0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 ,
0.048 0.048 0.048 0.048 0.048 0.048 0.048 0.048 0.048}
width2 = {0.027 0.045 0.068 0.125 0.2 0.5}
spacing2 = {0.072 0.081 0.09 0.135 0.18 0.3 0.4 0.6 1.2}
value2 = {0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 ,
0.048 0.048 0.048 0.048 0.048 0.048 0.048 0.048 0.048}
}
table = my_table6 {
property = width
table_type = RC
dim_type = drawn
value_type = absolute
bias_type = nonpreferred
width1 = {0.027 0.045 0.068 0.125 0.2 0.5}
spacing1 = {0.072 0.081 0.09 0.135 0.18 0.3 0.4 0.6 1.2}
value1 = {0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 ,
0.048 0.048 0.048 0.048 0.048 0.048 0.048 0.048 0.048}
width2 = {0.027 0.045 0.068 0.125 0.2 0.5}
spacing2 = {0.072 0.081 0.09 0.135 0.18 0.3 0.4 0.6 1.2}
value2 = {0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 ,
0.048 0.048 0.048 0.048 0.048 0.048 0.048 0.048 0.048}
}
}

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MIPT Keyword Dictionary
bot_enclosure

bot_enclosure
Parameter for layer(s): TSV
An optional TSV layer parameter that specifies the bottom enclosure.
Syntax
bot_enclosure = value
Parameters
• value
A floating point value that specifies the bottom enclosure covered by the metal
“from_layer”. The default is 0 if you do not specify this parameter.
Description
An optional parameter that specifies the bottom enclosure covered by the metal “from_layer”
for the TSV. This parameter is used only in TSV layer definitions. The bot_enclosure is shown
in Figure 4-5.

Figure 4-5. bot_enclosure for TSV Layer

For more information on the TSV layers, see TSV.

Examples
bot_enclosure = 0.34

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 MIPT Keyword Dictionary
botthk

botthk
Parameter for layer(s): dielectric
An optional dielectric layer parameter that specifies the conformal coating thickness on the
bottom of a conductor.
Syntax
botthk = value
Parameters
• value
A positive or negative floating point value that specifies the conformal coating thickness on
the bottom of a conductor.
Description
Use this dielectric parameter when diel_type is set to conformal, trench, or spacer. Allows the
bottom for the conformal to be moved down by the amount specified for botthk. The bothk
measurement is shown in Figure 4-6.

Figure 4-6. botthk Parameter for a Spacer Dielectric

See Dielectric for more information on the dielectric layer type.

Examples
botthk = 0.02

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MIPT Keyword Dictionary
bottom_thickness

bottom_thickness
Parameter for layer(s): contact
An optional parameter used by diffusion contact layers that specifies the lower section of the
diffusion contact.
Syntax
bottom_thickness = value
Parameters
• value
A positive floating point value that specifies the lower section of the diffusion contact.
Description
The optional bottom_thickness parameter is used to represent the lower section of the diffusion
contact as seen in Figure 4-7.

Figure 4-7. bottom_thickness Parameter for Contact Layer

See Contact for more information on the contact layer type.

Examples
bottom_thickness = 0.15

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 MIPT Keyword Dictionary
bulk_min_width

bulk_min_width
Parameter for layer(s): base, substrate, tap, well
An optional layer parameter that specifies the minimum width of the bulk layer. It can be
specified for base, substrate, tap, and well layer definitions.
Syntax
bulk_min_width = value
Parameters
• value
A non-negative floating point value used to specify the minimum width in microns.
Examples
Given the following layer definitions:

substrate = nsub {
zbottom = -50
ztop = -0.7
resistivity = 101800
eps = 11.9
bulk_resistance = 100
bulk_min_width = 0.5
}

well = nwell {
zbottom = -0.7
thickness = 0.7
resistivity = 100
eps = 11.9
bulk_resistance = 10
bulk_min_width = 0.5
}

tap = ntap {
zbottom = 0
ztop = 0.01
resistivity = 0.1
bulk_resistance = 2
bulk_min_width = 0.1
}

calibration adds the following SVRF statements to the calibrated rule file:

PEX RESISTANCE PARAMETERS XCALIBRATE_nsub BULKRESISTANCE 100 \

BULKMINWIDTH 0.5
PEX RESISTANCE PARAMETERS XCALIBRATE_nwell BULKRESISTANCE 10 \
BULKMINWIDTH 0.5
PEX RESISTANCE PARAMETERS XCALIBRATE_ntap BULKRESISTANCE 2 \
BULKMINWIDTH 0.1

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MIPT Keyword Dictionary
bulk_resistance

bulk_resistance
Parameter for layer(s): base, substrate, tap, well
An optional layer parameter that specifies the sheet resistance of the bulk layer. It is used to
calculate resistance between the bulk pin of a transistor and the nearest substrate or well
connection. This parameter can be specified for base, substrate, tap, and well layer definitions.
Syntax
bulk_resistance = value
Parameters
• value
A non-negative floating point value used to specify the sheet resistance in ohms.
Examples
Given the following layer definitions:

base = base_b {
zbottom = -1
thickness = 1
bulk_resistance = 15
}

calibration adds the following SVRF statement to the calibrated rule file:

PEX RESISTANCE PARAMETERS XCALIBRATE_base_b BULKRESISTANCE 15

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 MIPT Keyword Dictionary
calibration_type

calibration_type
Type: Global Parameters
A required global parameter declared at the beginning of your MIPT file that specifies the type
of calibration used.
Syntax
calibration_type = {RONLY | FIELDSOLVER | RULEBASED | ALL}
Parameters
• RONLY
A keyword which specifies that the MIPT file is only intended for RONLY calibrations.
When doing an RONLY calibration, only the technology header and resistance rules are
calibrated. It may not be suitable for other calibrations due to insufficient data or accuracy
of data.
• FIELDSOLVER
A keyword which specifies that the MIPT file is only intended for FIELDSOLVER
calibrations. When doing a FIELDSOLVER calibration, only the technology header and
resistance rules are calibrated. It may not be suitable for other calibrations due to
insufficient data or accuracy of data.
• RULEBASED
A keyword which specifies that the MIPT file is only intended for RULEBASED
calibrations. This type produces the same output as is currently expected for traditional
calibrations. It may not be suitable for other calibrations due to insufficient data or accuracy
of data.
• ALL
A keyword which specifies that the MIPT file is intended for ALL calibrations. It may be
used for other calibrations as specified on the command line.
Description
This required global parameter specifies the type of calibration used or possible uses of the
MIPT file. It can only be specified once. This parameter accepts a list of values or a single value
to indicate the possible uses of a specific MIPT file. Possible calibration types are RONLY,
FIELDSOLVER, RULEBASED and ALL. Multiple values must be separated by a space and
enclosed in braces ({ }). For more information on global parameters, see Global Parameters.

Examples
Example 1
calibration_type = RONLY

Example 2
calibration_type = {RONLY RULEBASED}

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MIPT Keyword Dictionary
cap_unit

cap_unit
Type: Global Parameters
An optional global parameter that specifies the units for capacitance values.
Syntax
cap_unit = unit
Parameters
• unit
A value that specifies the units for capacitance values.
Acceptable values are:
af — attofarads
ff — femtofarads (default)
pf — picofarads
nf — nanofarads
uf — microfarads
mf — millifarads
f — farads
The default is femtofarads.
Examples
cap_unit = pf

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 MIPT Keyword Dictionary
capacitive_only_etch

capacitive_only_etch
Parameter for layer(s): conductor, device_li, poly
An optional parameter, used for conductor, device_li, and poly layer definitions, that specifies
the layer bias for capacitance.
Syntax
capacitive_only_etch = value
Parameters
• value
A floating point value that specifies the layer bias for capacitance.
Description
This parameter can be specified for Conductor, Device_li, and Poly layer definitions. It is
equivalent to the capacitive_only_etch found in the standardized Interconnect Technology
Format (ITF).

Layer_bias applies to both resistance and capacitance. The value of layer_bias is determined
using the following equation:

layer_bias = -2 * capacitive_only_etch

Figure 4-43 in “layer_bias” shows the layer_bias measurement.

Examples
device_li = CA {
thickness = 0.059
min_width = 0.026
min_spacing = 0.051
capacitive_only_etch = -0.0057
}

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channel_er

channel_er
Parameter for layer(s): multigate
An optional multigate layer parameter used to specify the difference in permittivity of the gate
oxide and its lateral side.
Syntax
channel_er = value
Parameters
• value
A floating point value that specifies the difference in permittivity of the gate oxide and its
lateral side.
Description
An optional multigate layer parameter that specifies the difference in permittivity of the gate
oxide and its lateral side. This parameter is used only in multigate layer definitions. For more
information on the multigate layer definition, see Multigate.

Examples
channel_er = 8.0

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 MIPT Keyword Dictionary
comment

comment
Type: Global Parameters
An optional global parameter used to specify a comment string that is placed in the calibrated
rule file.
Syntax
comment = comment_info
Parameters
• comment_info
A string that describes comments and other information for the manufacturing technology
(process) being used.
Description
An optional global parameter used to create comments and other information for the
manufacturing technology (process) being used. Comments specified with the comment
parameter are placed in the calibrated rule file directly below the command line comment
separated with a blank line. They are located towards the top of the un-encrypted section of the
calibrated rule deck.

The comment parameter can only be specified once. If it is a single string without spaces, the
quotation marks are not required. If the string is enclosed in quotes, spaces are allowed. If the
description requires multiple lines, then it should be enclosed in braces ({ }).

For more information on global parameters, see Global Parameters.

Examples
Example 1
comment = MIPT_2_0_ekit_file

Example 2
comment = “MIPT 2.0 ekit file”

Example 3
comment = {
MIPT 2.0
ekit
file
}

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conductor

conductor
Type: Conductor layer
A layer definition keyword used to define a conductor layer.
Syntax
conductor = layer_name {
thickness = z_direction_metal_thickness
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistivity = resistivity_value
r_sheet = sheet_resistance
metal_fill = ‘{’fill_ratio fill_spacing fill_width [floating | grounded]‘}’
thickness_type = absolute | relative
ztop = top_ z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
coplanar_min_spacing = value
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
max_width = maximum_allowed _metal_width
max_spacing = maximum_allowed_metal_spacing
layer_bias = bias_actual_width_relative_to_drawn_width
capacitive_only_etch = layer_bias_for_capacitance_only
cond_type = nonplanar
trap_style = top | middle | bottom # where trapezoid measurements are taken from
extra_width = extra-width_of_side_walls # for a conductor with a trapezoid shape
extension = amount_layer_extends_past_diffusion_or_contact_layers
ronly_layers = ‘{’space_delimited_list_of_r-only_layer_names‘}’
density_window = ‘{’w1 h1 factor1‘}’ ... ‘{’wn hn factorn‘}’
widths = ‘{’ w1 w2 w3 ... wn ‘}’
spacings = ‘{’ s1 s2 s3 ... sn ‘}’
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• thickness
A required layer parameter that specifies the thickness of the metal layer in the z-direction.

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 MIPT Keyword Dictionary
conductor

• min_width
A required layer parameter that specifies the minimum allowed drawn width of metal
objects on this layer.
• min_spacing
A required layer parameter that specifies the minimum allowed drawn spacing between
conductors on this layer.
• resistivity
A required layer parameter that specifies the nominal metal resistance for this layer. This
parameter cannot be specified with r_sheet.
• r_sheet
A required layer parameter that specifies the sheet resistance for the layer. This parameter
cannot be specified with resistivity.
• metal_fill
An optional conducting layer parameter. It is a set of values enclosed in braces, used to
define a list of virtual fill parameters.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• measured_from
An optional conducting layer parameter that measures zbottom or ztop relative to the
specified layer.
• coplanar_min_spacing
An optional conducting layer parameter that specifies the minimum spacing value between
coplanar layers.
• tc1
An optional conducting layer parameter that specifies the resistance temperature1
coefficient.

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conductor

• tc2
An optional conducting layer parameter that specifies the resistance temperature2
coefficient.
• max_rlength
An optional conducting layer parameter that specifies the maximum length of a wire. This
parameter is used for resistance fracturing, which determines how many pieces a resistor
should be broken into for representation in a distributed network.
• max_width
An optional parameter that specifies the maximum allowed metal width.
• max_spacing
An optional parameter that specifies the maximum allowed metal spacing.
• layer_bias
An optional conducting layer parameter that specifies the bias of actual width relative to
drawn width.
• capacitive_only_etch
An optional parameter that specifies the layer bias for capacitance only.
• cond_type
An optional parameter that specifies the conductor layer is non-planar. Nonplanar is the
only permitted value.
• trap_style
An optional conducting layer parameter that defines where trapezoid measurements are
taken from. Permitted values are top, middle, or bottom.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
• extension
An optional conducting layer parameter that specifies the amount this layer extends past
diffusion or contact layers.
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).
• density_window
An optional conducting layer parameter specified as {w1 h1 factor1} ... {wn hn factorn}. The
braces are required for grouping.

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conductor

• widths
An optional conducting layer parameter that specifies a space delimited list of floating point
width values enclosed in braces ({ }).
• spacings
An optional conducting layer parameter that specifies a space delimited list of floating point
spacing values enclosed in braces ({ }).
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Description
Part of the layer definition syntax, this layer definition keyword is used to define the electrical
and physical characteristics of conductor layers. The conductor keyword is followed by an
equal sign, a unique user-specified layer name, and a list of parameters enclosed in required
braces. Each parameter must appear on its own line.

Conductor layers are conducting layers that are also referred to as metal layers. You are
required to specify at least one conducting layer in your MIPT file. Layers of this type can be
specified multiple times. For more information on conductor layers, see Conductor.

Examples
conductor = M1 {
ztop = 0.0
measured_from = poly_diel7
thickness = 0.09
min_width = 0.045
min_spacing = 0.045
resistivity = 0.0366
tc1 = use my_Mx_layers_tc1
tc2 = use my_Mx_layers_tc2
}

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cond_type

cond_type
Parameter for layer(s): conductor
An optional conductor layer parameter used to specify that the conductor layer is non-planar.
Syntax
cond_type = nonplanar
Parameters
• nonplanar
A keyword used to specify that the conductor layer is non-planar.
Description
An optional conductor layer parameter used to specify that the conductor layer is non-planar.
Use this parameter to define conductors sitting on top of non-planar or conformal dielectrics.
The conductor layer is treated as a normal planar conductor, if this parameter is not specified.

This parameter is used only in conductor layer definitions. For more information on the
conductor layer definition, see Conductor.

Examples
If a conductor, M3, is defined after a conformal dielectric, dielectric3, it is placed coplanar to
the conductor the conformal is associated with, M2, as in Figure 4-8.

Figure 4-8. Coplanar M2 and M3

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 MIPT Keyword Dictionary
cond_type

To properly place the conductor M3 over the conformal dielectric, dielectric3, as shown in
Figure 4-9, specify the cond_type parameter set to nonplanar in the definition of conductor M3.
For example:

conductor = M3 {
thickness = 0.24
min_width = 0.13
min_spacing = 0.12
r_sheet = 0.38
cond_type = nonplanar
}

Figure 4-9 shows an example of a conductor over conformal dielectric.

Figure 4-9. Conductor Over Nonplanar Dielectric

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MIPT Keyword Dictionary
contact

contact
Type: Contact layer
A layer definition keyword used to define a contact layer.
Syntax
contact = layer_name {
measured_from = lower_conductor_layername
measured_to = upper_conductor_layername
area = area_of_contact
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistance = resistance_per_via
enclosure_down = enclosure_with_respect_to_lower_conductor
enclosure_up = enclosure_with_respect_to_upper_conductor
min_length = length_of_shape
bottom_thickness = lower_section_value
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
gate_to_cont_spacing_min = minimum_allowed_gate_to_contact_spacing
extra_width = measurement_of_side_walls
ronly_layers = ‘{’space_delimited_list_of_r-only_layernames‘}’
src_drn_contact_layers = ‘{’space_delimited_list_of_srcdrn_contact_layernames‘}’
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• measured_from
A required parameter that specifies the lower conductor layer_name.
• measured_to
A required parameter that specifies the upper conductor layer_name.
• area
A required parameter if min_width is not specified. Specifies the area of the contact in
distance_units squared.
• min_width
A required parameter that specifies the minimum allowed metal width if the area parameter
is not specified. This parameter cannot be specified with the area parameter. The shape is
assumed to be square, with dimensions of min_width * min_width.

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 MIPT Keyword Dictionary
contact

• min_spacing
A required parameter that specifies the minimum allowed metal spacing.
• resistance
A required parameter that specifies the resistance per via or contact. The value is specified
in Ohms.
• enclosure_down
A required parameter that specifies enclosure with respect to a lower conductor. This value
is typically 0, and defaults to 0 if not specified.
• enclosure_up
A required parameter that specifies enclosure with respect to an upper conductor. This value
is typically 0, and defaults to 0 if not specified.
• min_length
An optional parameter that specifies the length of the shape. From a dimension perspective,
min_width is the shortest side, while min_length is the longest side. This parameter may be
used together with min_width parameter, but cannot be used with area parameter. The shape
is assumed to be rectangular, with dimensions of min_width * min_length.
• bottom_thickness
An optional parameter that specifies the lower section of a diffusion contact. The value must
be a positive floating point number.
• tc1
An optional parameter that specifies the resistance temperature1 coefficient.
• tc2
An optional parameter that specifies the resistance temperature2 coefficient.
• gate_to_cont_spacing_min
An optional parameter that specifies the minimum allowed gate to contact spacing.
• extra_width
An optional parameter that specifies the extra width of side walls for a conductor with a
trapezoid shape.
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).
• src_drn_contact_layers
An optional contact layer parameter that specifies the layer or layers that make up the
source/drain contact region of devices. Enclose the list in braces ({ }).

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MIPT Keyword Dictionary
contact

• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Description
Part of the layer definition syntax, the contact layer definition keyword is used to define the
electrical and physical characteristics of contact layers. The contact keyword is followed by an
equal sign, a unique user-specified layer name, and a list of parameters enclosed in required
braces. Each parameter must appear on its own line.

Layers of this type may be specified multiple times. For more information on contact, see
Contact.

Examples
contact = my_contact {
resistance = 1.1
min_width = 0.13
min_spacing = 0.15
enclosure_up = 0.00
enclosure_down = 0.00
measured_from = polyX
measured_to = metal1
}

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 MIPT Keyword Dictionary
contact_width2

contact_width2
Parameter for layer(s): pcaux, seed
An optional pcaux and seed layer parameter for all contact types except diffusion contact. This
parameter specifies the ct2 bias width for a seed layer contact.
Syntax
contact_width2 = value
Parameters
• value
A floating point value used to specify the ct2 bias.
Description
The optional contact_width2 parameter is used to represent the upper section of the diffusion
contact as seen in Figure 4-10.

Figure 4-10. contact_width2 Parameter for Seed Layer

Use a contact_width table to define ct1. For more information on contact_width tables, see
CONTACT_WIDTH Table. See Seed for more information on the seed layer type.

Examples
contact_width2 = 0.24

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MIPT Keyword Dictionary
coplanar_min_spacing

coplanar_min_spacing
Type: conductor, device_li, diffusion, ground, li, pcaux, poly, resistor
An optional parameter for conducting layer definitions conductor, device_li, diffusion, ground,
li, pcaux, poly, and resistor that specifies the minimum spacing used between coplanar layers.
Syntax
coplanar_min_spacing = value
Parameters
• value
A positive floating point value that represents the minimum spacing used between coplanar
layers.
Examples
coplanar_min_spacing = 0.04

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 MIPT Keyword Dictionary
copy

copy
Parameter for layer(s): ground
An optional ground layer parameter that specifies a space delimited list of layer names to be
mapped to ground layers under the gate.
Syntax
copy = ‘{’layer_name1 layer_name2 ... layer_namen‘}’
Parameters
• ‘{’layer_name1 layer_name2 ... layer_namen‘}’
A space delimited list of layer names enclosed in braces ({ }).
Description
In most cases, the ground layer is a copy of the gate layer and associates the ground layer with
the gate layer in the layout patterns in the sdcont profile. For example, if there are two ground
layers N and P associated with two N and P diffusion layers, the gate layers associated with
each diffusion layer go in the copy list for the associated ground layers.

Examples
ground = tpdiff_device_gnd {
zbottom = -0.01
thickness = 0.1
resistivity = 11
copy = {pgate pgate_srn}
}

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corner

corner
Type: Global Parameters
An optional global parameter that specifies the corner variation to be applied during extraction.
Syntax
corner = typical | cbest | rcbest | cworst | rcworst
Parameters
• typical | cbest | rcbest | cworst | rcworst
A value that specifies the corner variation to be applied during extraction. The default is
typical.
Description
Process corners represent the extremes of variations of fabrication parameters within which a
circuit must function correctly. A circuit that has been etched onto the wafer and runs on
devices fabricated at these process corners may run slower or faster than specified and at lower
or higher temperatures and voltages. Use the corner parameter to specify the corner variation
you want applied during calibration.

The process corner variation choices are typical, cbest, rcbest, cworst, and rcworst. The default
is the process name if neither this parameter or the “-corner” command line option is specified.
The corner parameter can only be specified once.

Calibration generates the PEX Corner statement and updates the reference corners in the PEX
Corner Custom statement with the specified corner variation in the calibrated rule file.

For more information on global parameters, see Global Parameters. For information on SVRF
statements, see the Standard Verification Rule Format (SVRF) Manual.

Examples
Example 1
Specifying the following global parameter in your .mipt file:

corner = cbest

generates SVRF statements similar to the following in your rules.C and rules.R files:

PEX CORNER CBEST

PEX CORNER CUSTOM dp_corner1 dp_corner2 REFERENCE cbest cbest

VARIATION XCALIBRATE__M1
mask_offset_x 1 delta 0.007 -0.007
mask_offset_y 1 delta 0.007 -0.007

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 MIPT Keyword Dictionary
corner

Example 2
Specifying the following global parameter in your .mipt file:

corner = typical

generates SVRF statements similar to the following in your rules.C and rules.R files:

PEX CORNER TYPICAL

PEX CORNER CUSTOM dp_corner1 dp_corner2 REFERENCE typical typical

VARIATION XCALIBRATE__M1
mask_offset_x 1 delta 0.007 -0.007
mask_offset_y 1 delta 0.007 -0.007

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MIPT Keyword Dictionary
damage_eps

damage_eps
Parameter for layer(s): dielectric
An optional parameter that specifies the damaged relative permittivity (dielectric constant).
This changes the dielectric constant in a planar dielectric where the damaged portion touches
the conductor laterally or vertically. This parameter can only be specified if diel_type is set to
planar and must be specified with damage_thickness parameter.
Syntax
damage_eps = value
Parameters
• value
A floating point value that specifies the damaged relative permittivity (dielectric constant).
Examples
dielectric = diel1 {
diel_type = planar
thickness = 0.1
eps = 2.5
damage_thickness = 0.001
damage_eps = 3.7
}

dielectric = diel2 {
diel_type = conformal
thickness = 1
eps = 2.5
swthk = 0.075
topthk = 0.00
bottthk = 0.00
ref_layer = m1
}

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damage_thickness

damage_thickness
Parameter for layer(s): dielectric
An optional dielectric layer parameter that specifies the damaged thickness of the dielectric
layer in the z-direction where it touches the conductor laterally or vertically. This parameter can
only be specified if diel_type is set to planar and must be specified with damage_eps.
Syntax
damage_thickness = value
Parameters
• value
A floating point value that specifies the damaged thickness of the dielectric layer in the z-
direction.
Examples
dielectric = diel1 {
diel_type = planar
thickness = 0.1
eps = 2.5
damage_thickness = 0.001
damage_eps = 3
}

dielectric = diel2 {
diel_type = conformal
thickness = 1
eps = 2.5
swthk = 0.075
topthk = 0.00
bottthk = 0.00
ref_layer = m1
}

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date

date
Type: Global Parameters
An optional global parameter used to specify the date the MIPT file containing the description
of the process was created. The specified string is added to the beginning of the calibrated rule
file during calibration. It can only be specified once. If date is a single string without spaces, the
quotation marks are not required. If the string is enclosed in quotes, spaces are allowed.
Syntax
date = date
Parameters
• date
A string that specifies the date the MIPT file containing the description of the process was
created.
Examples
Example 1
date = August_9_2010

Example 2
date = 8/9/10

Example 3
date = “August 9, 2010”

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density_window

density_window
Parameter for layer(s): conductor, poly, diffusion, li
An optional conducting layer parameter that takes a list of values that are applied to any
conductor that has a thickness table.
Syntax
density_window = ‘{’ ‘{’w1 h1 factor1 stepx1 stepy1‘}’... ‘{’wn hn factorn stepxn stepyn‘}’ ‘}’
Parameters
• {w h factor stepx stepy}
One or more space separated lists of values applied to any conductor that has a thickness
table. These lists must be enclosed in braces ({ }).
w — window size.
h — optional window height. The default is the value specified for window size, w.
factor — optional value between 0 and 1 that specifies the weight applied to the density
window. The default is 1.
stepx stepy — optional value pair that specifies the grid increment for which the fill
density windows are tiled. The default is half the window size, w.
Description
If thickness variation is based on width and density, one or more density windows may be
specified. The list of values must be enclosed in braces ({ }). There is default density window
size is the cell size. This parameter may optionally be specified by conducting layer definitions,
conductor, poly, diffusion, and li.

During calibration, a PEX Density Window statement is generated and written to the calibrated
rule files for each conductor that specifies the density_window parameter.

For more information on the conductor keyword, see Conductor. For more information on the
poly keyword, see Poly. For more information on the diffusion keyword, see Diffusion. For
more information on the li keyword, see li.

Examples
density_window = {{10 10 0.5 5 5} {30 20 0.1 10 10} {50 50 0.4 25 25}}

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depletion_width

depletion_width
Parameter for layer(s): TSV
A required TSV layer parameter that specifies the depletion region width of a Through-Silicon-
Via (TSV).
Syntax
depletion_width = value
Parameters
• value
A floating point value that specifies the depletion region width.
Description
The depletion_width measurement is shown in Figure 4-11.

Figure 4-11. depletion_width for TSV Layers

For more information on TSV layers, see TSV.

Examples
depletion_width = 10.4

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 MIPT Keyword Dictionary
derived

derived
Type: Derived layer
The derived layer keyword is an optional keyword used to define the electrical characteristics of
a conducting layers. The derived keyword is followed by an equal sign, a unique user-specified
layer name, and a list of parameters enclosed in required braces. Each parameter must appear on
its own line. This layer type cannot alter any physical parameters of a conducting layer and can
be specified more than once.
Syntax
derived = layer_name {
derived_type = {src_drn | src_drn_contact | seed | ronly | ronly_contact | ronly_via}
resistance = resistance_per_via
resistivity = resistivity_value
r_sheet = sheet_resistance
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• derived_type
A required parameter that defines the derived layer type. Derived types are only valid for
use with specific layers and the syntax checker will verify these are used appropriately.
Accepted values are src_drn, src_drn_contact, seed, ronly, ronly_contact, or ronly_via.
• resistance
A required parameter that specifies the resistance per via or contact. The value is specified
in Ohms. This parameter cannot be specified with resistivity or r_sheet.
• resistivity
A required layer parameter that specifies the nominal metal resistance for this layer. This
parameter cannot be specified with r_sheet.
• r_sheet
A required layer parameter that specifies the sheet resistance for the layer. This parameter
cannot be specified with resistivity.
• tc1
An optional parameter that specifies the resistance temperature1 coefficient.

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MIPT Keyword Dictionary
derived

• tc2
An optional parameter that specifies the resistance temperature2 coefficient.
• max_rlength
An optional conducting layer parameter that specifies the maximum length allowed for
resistance fracturing.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Examples
derived = my_src_drn { # Table usage; preferred syntax
derived_type = src_drn
resistivity = 0.0355
tc1 = my_local_tc1 use my_Mx_layers_tc1
tc2 = my_local_tc2 use my_Mx_layers_tc2
}

diffusion = my_diff {
# CONDUCTOR PARAMETERS
src_drn_layers = {my_src_drn}
}

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 MIPT Keyword Dictionary
derived_type

derived_type
Parameter for layer(s): derived
A required derived layer parameter that describes the specified derived layer type. Derived
types are only valid for use with specific layers.
Syntax
derived_type = {src_drn | src_drn_contact | seed | ronly | ronly_contact | ronly_via}
Parameters
• src_drn
Specifies that the type of derived layer is src_drn. Valid for diffusion layers only.
• src_drn_contact
Specifies that the type of derived layer is src_drn_contact. Valid for contact layers only.
• seed
Specifies that the type of derived layer is seed. Valid for poly layers only.
• ronly
Specifies that the type of derived layer is ronly. Valid for conductor and seed layers only.
• ronly_contact
Specifies that the type of derived layer is ronly_contact. Valid for contact layers only.
• ronly_via
Specifies that the type of derived layer is ronly_via. Valid for via layers only.
Examples
derived_type = src_drn

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device_li

device_li
Type: Device_li layer
The required device_li layer definition keyword is used to define the device region of the li
layer. The device_li keyword is followed by an equal sign, a unique user-specified layer name,
and a list of parameters enclosed in required braces. Each parameter must appear on its own
line. Layers of this type represent a physical layer in the stack and can be specified multiple
times. This layer definition is required when you are not performing RONLY extraction.
Syntax
device_li = layer_name {
thickness = z-direction_ metal_ thickness
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistivity = resistivity_value
r_sheet = sheet_resistance
metal_fill = ‘{’fill_ratio fill_spacing fill_width [floating | grounded] ‘}’
ztop = top_ z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
thickness_type = absolute | relative
coplanar_min_spacing = value
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
max_width = maximum_allowed _metal_width
max_spacing = maximum_allowed_metal_spacing
devices = ‘{’device1 device2 ... devicen‘}’ # a space delimited list of device names
layer_bias = bias_actual_width_relative_to_drawn_width
capacitive_only_etch = layer_bias_for_capacitance_only
trap_style = top | middle | bottom # where trapezoid measurements are taken from
extra_width = extra-width_of_side_walls # for a conductor with a trapezoid shape
extension = amount_layer_extends_past_diffusion_or_contact_layers
ronly_layers = ‘{’space_delimited_list_of_r-only_layer_names‘}’
density_window = ‘{’w1 h1 factor1‘}’ ... ‘{’wn hn factorn‘}’
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• thickness
A required layer parameter that specifies the thickness of the metal layer in the z-direction.

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device_li

• min_width
A required layer parameter that specifies the minimum allowed drawn width of metal
objects on this layer.
• min_spacing
A required parameter that specifies the minimum allowed metal spacing.
• resistivity
A required layer parameter that specifies the nominal metal resistance for this layer. This
parameter cannot be specified with r_sheet.
• r_sheet
A required layer parameter that specifies the sheet resistance for the layer. This parameter
cannot be specified with resistivity.
• metal_fill
An optional conducting layer parameter. It is a set of values enclosed in braces, used to
define a list of virtual fill parameters.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• measured_from
An optional conducting layer parameter that measures zbottom or ztop relative to the
specified layer.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.
• coplanar_min_spacing
An optional conducting layer parameter that specifies the minimum spacing value between
coplanar layers.
• tc1
An optional parameter that specifies the resistance temperature1 coefficient.
• tc2
An optional parameter that specifies the resistance temperature2 coefficient.

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device_li

• max_rlength
An optional conducting layer parameter that specifies the maximum length allowed for
resistance fracturing.
• max_width
An optional parameter that specifies the maximum allowed metal width.
• max_spacing
An optional parameter that specifies the maximum allowed metal spacing.
• devices
An optional layer parameter that specifies a space delimited list of device names enclosed in
braces. This parameter is used to specify the devices the layer definition applies to.
• layer_bias
An optional conducting layer parameter that specifies the bias of actual width relative to
drawn width.
• capacitive_only_etch
An optional parameter that specifies the layer bias for capacitance only.
• trap_style
An optional conducting layer parameter that defines where trapezoid measurements are
taken from. Permitted values are top, middle, or bottom.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
• extension
An optional conducting layer parameter that specifies the amount this layer extends past
diffusion or contact layers.
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).
• density_window
An optional conducting layer parameter specified as {w1h1factor1} ... {wnhnfactorn}. The
braces are required for grouping.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.

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device_li

Examples
device_li = m0_od2 {
ztop = 0.0
measured_from = poly_diel7
thickness = 0.09
min_width = 0.045
min_spacing = 0.045
resistivity = 0.0366
tc1 = use my_Mx_layers_tc1
tc2 = use my_Mx_layers_tc2
}

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MIPT Keyword Dictionary
device_li_layers

device_li_layers
Parameter for layer(s): li
An optional li layer parameter that specifies a space delimited list of device_li layer names
identifying the device local interconnect layers associated with it.
Syntax
device_li_layers = {li_layer_name1 li_layer_name2 ... li_layer_namen}
Parameters
• {li_layer_name1 li_layer_name2 ... li_layer_namen}
A space delimited list of device_li layer names enclosed in braces ({ }).
Examples
li = M0_STI1 {
min_width = 0.02600
min_spacing = 0.05800
resistivity = 0.67
device_li_layers = {M0_OD1}
}

device_li = M0_OD1 {
min_spacing = 0.05800
resistivity = 0.672
layer_bias = -0.0070
devices = { ngate_mac ngate_15_mac
pgate_mac pgate_15_mac}
}

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devices

devices
Parameter for layer(s): device_li, diffusion, li, pcaux, poly, resistor, seed, src_drn
An optional layer parameter that specifies the devices the layer definition applies to.
Syntax
devices = {device1 device2 ... devicen}
Parameters
• {device1 device2 ... devicen}
A space delimited list of device names enclosed in braces ({ }).
Examples
poly = GATE_FINAL{
thickness = 0.1
min_width = 0.045
min_spacing = 0.12
extension = 0.14
devices = {NMOS PMOS}
}

diffusion = diff {
thickness = 0.16
min_width = 0.045
min_spacing = 0.12
devices = {NMOS PMOS}
src_drn_layers = {NDIFSI_FINAL PDIFSI_FINAL}
extension = 0.03
}

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MIPT Keyword Dictionary
dielectric

dielectric
Type: Dielectric layer
Part of the layer definition syntax, the dielectric layer definition keyword is used to optionally
define a insulating layers. The dielectric keyword is followed by an equal sign, a unique user-
specified layer name, and a list of parameters enclosed in required braces. Each parameter must
appear on its own line. Layers of this type represent a physical layer in the stack and can be
specified multiple times.
Syntax
dielectric = layer_name {
diel_type = planar | conformal | rsd_conformal | trench | mask | spacer
thickness = layer_thickness
eps = value
ref_layer = reference_layername # required for conformal, trench, and spacer diel_types
swslope = value
swthk = value # required for conformal, trench, and spacer diel_types
topthk = value # required for conformal, trench, and spacer diel_types
botthk = value # required for conformal, trench, and spacer diel_types
ztop = top_z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
airgap = {rectangle | triangle} min_gap (v) spacing (s1 ... sn) width (w1 ... wn)
thickness (t1 ... tn) dist_from_surface (b1 ... bn)
thickness_type = absolute | relative
damage_thickness = value
damage_eps = value
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• diel_type
A required parameter that specifies the type of dielectric being described. Legal values are
planar, conformal, rsd_conformal, dielectric, mask, or spacer.
• thickness
A required layer thickness parameter that specifies the thickness of the dielectric layer in the
z-direction. The thickness may be a zero value if diel_type is conformal or rsd_conformal.
For a trench dielectric where diel_type is conformal or rsd_conformal, the thickness must be
0.

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dielectric

• eps
A required value that specifies the relative permittivity (dielectric constant).
• ref_layer
An optional parameter when diel_type is planar. A required parameter when diel_type is set
to conformal, rsd_conformal, trench, or spacer.
• swslope
An optional dielectric layer parameter used to specify the angle of the side wall in degrees.
May only be used when diel_type is set to conformal or trench.
• swthk
An optional parameter when diel_type is planar. A required parameter when diel_type is set
to conformal, rsd_conformal, trench, or spacer.
• topthk
An optional parameter when diel_type is planar. A required parameter when diel_type is set
to conformal, rsd_conformal, trench, or spacer.
• botthk
An optional parameter when diel_type is planar. A required parameter when diel_type is set
to conformal, rsd_conformal, trench, or spacer.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• measured_from
An optional parameter whose value specifies the layer whose top surface is used as the base
from which the layer’s bottom is measured. Measures zbottom or ztop relative to the given
layer. This parameter is required if thickness_type parameter is specified.
• airgap
An optional conformal dielectric parameter that specifies the airgap parameters for the
dielectric layer.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.

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dielectric

• damage_thickness
An optional parameter that specifies the damaged thickness a planar dielectric layer in the z-
direction where it touches the conductor laterally or vertically. This parameter can only be
specified if diel_type is set to planar and must be specified with damage_eps.
• damage_eps
An optional parameter that specifies the damaged relative permittivity (dielectric constant).
This parameter can only be specified if diel_type is set to planar and must be specified with
damage_thickness parameter.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Examples
dielectric = diel1 {
diel_type = planar
thickness = 0.1
eps = 2.5
}
dielectric = diel2 {
diel_type = conformal
thickness = 1
eps = 2.5
swthk = 0.075
topthk = 0.2
botthk = 0.1
ref_layer = m1
}

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diel_type

diel_type
Parameter for layer(s): dielectric
A required dielectric layer parameter that describes the type of dielectric layer being defined.
Syntax
diel_type = planar | conformal | rsd_conformal | trench | mask | spacer
Parameters
• planar
Specifies a planar dielectric.
• conformal
Specifies a conformal dielectric.
• rsd_conformal
Specifies a rsd conformal dielectric.
• trench
Specifies a trench dielectric.
• mask
Specifies a local dielectric for extraction with field solvers. Use only with
Calibre xACT 3D.
• spacer
Specifies a spacer dielectric.
Description
Legal values for diel_type are planar, conformal, rsd_conformal, trench, mask. or spacer.
Specifying more than twenty conformals per layer generates an error message and stops
calibration. A layer cannot have a diel_type equal to both conformal and trench.

Set diel_type to mask when defining the local dielectric layer, typically around a device. The
mask subtype does not change the top of the current dielectric stack for relative layer
definitions. It should have the required thickness and eps parameters. If zbottom is not
specified, the mask subtype sits on top of the last regular dielectric, and does not change the top
of the stack. It is coplanar with the planar dielectrics. It may be trapezoid in shape (have an
extra_width parameter), and may have its own conformal or trench dielectrics. This dielectric
type is only used by Calibre xACT 3D. Figure 4-12 shows an example of a mask dielectric.

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MIPT Keyword Dictionary
diel_type

Figure 4-12. Mask Dielectric

Set diel_type to conformal when defining a dielectric layer over a diffusion. If diel_type is
conformal, the sidewall thickness (swthk), top thickness (topthk), and bottom thickness (botthk)
of the conformal dielectric as well as a reference layer (ref_layer) for the conformal layer must
be specified. Figure 4-13, Figure 4-14, and Figure 4-15 show examples of conformal dielectrics.

Figure 4-13. Conformal Dielectric

Figure 4-14. Conformal Dielectric with Negative Top Thickness

Figure 4-15. Double Conformal Dielectrics

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 MIPT Keyword Dictionary
diel_type

Set diel_type to rsd_conformal when defining a dielectric layer over an rsd layer. If diel_type is
rsd_conformal, the sidewall thickness (swthk), top thickness (topthk), and bottom thickness
(botthk) of the rsd_conformal dielectric as well as a reference layer (ref_layer) for the
rsd_conformal layer must be specified.

Figure 4-16 shows an example of an rsd_conformal dielectric.

Figure 4-16. RSD_conformal Dielectric

Figure 4-17 and Figure 4-18 are examples of trench dielectrics.

Figure 4-17. Trench Dielectric with Positive Top Thickness

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MIPT Keyword Dictionary
diel_type

Figure 4-18. Trench Dielectric with Negative Top Thickness

Figure 4-19 shows an example of a spacer dielectric. Spacer dielectrics are conformal
dielectrics used to self align contacts near the gate or other similar operations.

Figure 4-19. Spacer Dielectric

For more information on the dielectric layers, see Dielectric.

Examples
dielectric = diel1 {
diel_type = planar
thickness = 0.1
eps = 2.5
}

dielectric = diel2 {
diel_type = conformal
thickness = 1
eps = 2.5
swthk = 0.075
topthk = 0.00
bottthk = 0.00
ref_layer = m1
}

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 MIPT Keyword Dictionary
diffusion

diffusion
Type: Diffusion layer
Part of the layer definition syntax, the diffusion layer definition keyword is used to define the
electrical and physical characteristics of conducting. The diffusion keyword is followed by an
equal sign, a unique user-specified layer name, and a list of parameters enclosed in required
braces. Each parameter must appear on its own line. Layers of this type can be specified
multiple times. This layer definition is required when you are not performing RONLY
extraction.
Syntax
diffusion = layer_name {
thickness = z-direction_metal_ thickness
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistivity = resistivity_value
r_sheet = sheet_resistance
metal_fill = ‘{’fill_ratio fill_spacing fill_width [floating | grounded] ‘}’
ztop = top_ z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
thickness_type = absolute | relative
coplanar_min_spacing = value
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
max_width = maximum_allowed _metal_width
max_spacing = maximum_allowed_metal_spacing
devices = ‘{’device1 device2 ... devicen‘}’ # a space delimited list of device names
layer_bias = bias_actual_width_relative_to_drawn_width
trap_style = top | middle | bottom # where trapezoid measurements are taken from
extra_width = extra-width_of_side_walls # for a conductor with a trapezoid shape
extension = amount_layer_extends_past_diffusion_or_contact_layers
ronly_layers = ‘{’space_delimited_list_of_r-only_layer_names‘}’
density_window = ‘{’w1 h1 factor1‘}’ ... ‘{’wn hn factorn‘}’
src_drn_layers = ‘{’space_delimited_list_of_src_drn_layer_names‘}’
rsd_enclosure = raised_source/drain_edge_bias_value
rsd_thickness = raised_source/drain_height_value
rsd_spacing = raised_source/drain_to_gate_spacing_value
widths = ‘{’ w1 w2 w3 ... wn ‘}’
spacings = ‘{’ s1 s2 s3 ... sn ‘}’
hidden = false | true
}

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MIPT Keyword Dictionary
diffusion

Parameters
• layer_name
A required unique user-specified name.
• thickness
A required layer parameter that specifies the thickness of the diffusion metal layer in the z-
direction.
• min_width
A required layer parameter that specifies the minimum allowed drawn width of metal
objects on this layer.
• min_spacing
A required parameter that specifies the minimum allowed metal spacing.
• resistivity
A required layer parameter that specifies the nominal metal resistance for this layer. This
parameter cannot be specified with r_sheet.
• r_sheet
A required layer parameter that specifies the sheet resistance for the layer. This parameter
cannot be specified with resistivity.
• metal_fill
An optional conducting layer parameter. It is a set of values enclosed in braces, used to
define a list of virtual fill parameters.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• measured_from
An optional conducting layer parameter that measures zbottom or ztop relative to the
specified layer.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.
• coplanar_min_spacing
An optional conducting layer parameter that specifies the minimum spacing value between
coplanar layers.

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 MIPT Keyword Dictionary
diffusion

• tc1
An optional parameter that specifies the resistance temperature1 coefficient.
• tc2
An optional parameter that specifies the resistance temperature2 coefficient.
• max_rlength
An optional conducting layer parameter that specifies the maximum length allowed for
resistance fracturing.
• max_width
An optional parameter that specifies the maximum allowed metal width.
• max_spacing
An optional parameter that specifies the maximum allowed metal spacing.
• devices
An optional layer parameter that specifies a space delimited list of device names enclosed in
braces. This parameter is used to specify the devices the layer definition applies to.
• layer_bias
An optional conducting layer parameter that specifies the bias of actual width relative to
drawn width.
• trap_style
An optional conducting layer parameter that defines where trapezoid measurements are
taken from. Permitted values are top, middle, or bottom.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
• extension
An optional conducting layer parameter that specifies the amount this layer extends past
diffusion or contact layers.
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).
• density_window
An optional conducting layer parameter specified as {w1h1factor1} ... {wnhnfactorn}. The
braces are required for grouping.
• src_drn_layers
An optional layer parameter that specifies a space delimited list of src_drn layer names
enclosed in braces ({ }).

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MIPT Keyword Dictionary
diffusion

• rsd_enclosure
An optional layer parameter that specifies the raised source/drain edge bias.
• rsd_thickness
An optional conducting layer parameter that specifies the raised source/drain height.
• rsd_spacing
An optional conducting layer parameter that specifies the raised source/drain to gate
spacing.
• widths
An optional conducting layer parameter that specifies a space delimited list of floating point
width values enclosed in braces ({ }).
• spacings
An optional conducting layer parameter that specifies a space delimited list of floating point
spacing values enclosed in braces ({ }).
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Examples
diffusion = diff1 {
thickness = 0.09
min_width = 0.045
min_spacing = 0.045
resistivity = 0.0366
src_drn_layers = {tndiff tpdiff}
}

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 MIPT Keyword Dictionary
dim_type

dim_type
table structure parameter
A required table structure parameter that must be either drawn or actual. Note that not every
keyword is supported with every table type.
Syntax
dim_type = drawn | actual
Parameters
• drawn
Specifies that the table should treat dimension values as drawn.
• actual
Specifies that the table should treat dimension values as actual.
Description
A required table structure parameter that specifies the types of values specified in the table.
“Table Property” on page 92 shows which dimension type settings should be used for each table
property. For more information on tables, see “Table Syntax” on page 88.

Examples
dim_type = drawn

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MIPT Keyword Dictionary
distance_unit

distance_unit
Type: Global Parameters
An optional global parameter that specifies the units for distance values. It can only be specified
once.
Syntax
distance_unit = unit
Parameters
• unit
A value that specifies the units for distance values.
Acceptable values are:
a — angstrom
nm — nanometer
um — micrometer or micron
The default is micrometers (1e-06).
Examples
distance_unit = nm

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 MIPT Keyword Dictionary
enclosure_down

enclosure_down
Parameter for layer(s): contact, ubump, via
A required parameter used by via, contact, or ubump layers that specifies the enclosure with
respect to a lower conductor.
Syntax
enclosure_down = value
Parameters
• value
A floating point value used to specify the enclosure with respect to a lower conductor. The
default is 0 if this parameter is not specified.
Examples
enclosure_down = 0.01

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MIPT Keyword Dictionary
enclosure_up

enclosure_up
Parameter for layer(s): contact, ubump, via
A required parameter used by via, contact, or ubump layers that specifies the enclosure with
respect to an upper conductor.
Syntax
enclosure_up = value
Parameters
• value
A floating point value used to specify the enclosure with respect to an upper conductor. The
default is 0 if this parameter is not specified.
Examples
enclosure_up = 0.01

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 MIPT Keyword Dictionary
eps

eps
Parameter for layer(s): dielectric
A required parameter for dielectric layer definitions that specifies the relative permittivity
(dielectric constant).
Syntax
eps = value
Parameters
• value
A floating point value that specifies the relative permittivity (dielectric constant).
Examples
dielectric = diel1 {
diel_type = planar
thickness = 0.1
eps = 2.5
}

dielectric = diel2 {
diel_type = conformal
thickness = 1
eps = 2.5
swthk = 0.075
topthk = 0.00
bottthk = 0.00
ref_layer = m1
}

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MIPT Keyword Dictionary
equation

equation
table structure parameter
An optional table structure parameter used to specify an in-die equation.
Syntax
equation = ‘{’equation_to_evaluate’}’
Parameters
• ‘{’equation_to_evaluate‘}’
An equation enclosed in braces ({ }) used to specify the thickness variation (in-die)
equation.
Description
Specifies an in-die equation for the layer. When specified, this equation is copied to the PEX
Tables section of the generated rules file. The equation definition follows the rules in the
Standard Verification Rule Format (SVRF) Manual.

Examples
table = my_thickness_table {
property = thickness
table_type = R
dim_type = drawn
value_type = delta
equation = {
property T
T = density () + 2
}
} # end table

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 MIPT Keyword Dictionary
extension

extension
Parameter for layer(s): conductor, device_li, diffusion, li, pcaux, poly, resistor, seed, src_drn
An optional conducting layer parameter that specifies the amount the conductor layer extends
past the diffusion or contact layers. For diffusion layer, this specifies the amount diffusion
extends past the contact layer.
Syntax
extension = value
Parameters
• value
A floating point value used to specify the amount the conductor layer extends past the
diffusion or contact layers.
Examples
extension = 0.05

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MIPT Keyword Dictionary
extra_width

extra_width
Parameter for layer(s): conductor, contact, device_li, diffusion, ground, li, poly, resistor, seed,
src_drn, TSV, via
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
Syntax
extra_width = value
Parameters
• value
A floating point value used to specify the extra-width of side walls for a conductor with a
trapezoid shape.
Description
The extra-width of side walls for a conductor with a trapezoid shape is shown in Figure 4-20. To
simplify this diagram, drawn width and actual width are shown as equal.

The value of extra_width is determined using one of the following two equations:

• extra_width = top_width - bottom_width

• extra_width = 2 * thickness * tan(a)
If top_width is greater than bottom_width, then the extra_width value is positive.

Figure 4-20. Extra_width for Positive Trapezoid Style

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 MIPT Keyword Dictionary
extra_width

If top_width is less than bottom_width, then extra width value is negative.

Figure 4-21. Extra_width for Negative Trapezoid Style

For more information on the conductor keyword, see Conductor. For more information on the
poly keyword, see Poly. For more information on the diffusion keyword, see Diffusion. For
more information on the li keyword, see li.

Examples
extra_width = 0.05

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MIPT Keyword Dictionary
fin_length

fin_length
Parameter for layer(s): multigate
A required multigate layer parameter used to specify the length of the fin.
Syntax
fin_length = value
Parameters
• value
A floating point value that specifies the length of the fin.
Description
A required multigate layer parameter that specifies the length of the fin. This parameter is used
only in multigate layer definitions. The fin_length is shown in Figure 4-22.

Figure 4-22. fin_length of the multigate layer

For more information on the multigate layer definition, see Multigate.

Examples
fin_length = 0.032

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 MIPT Keyword Dictionary
fin_spacing

fin_spacing
Parameter for layer(s): multigate
A required multigate layer parameter used to specify the spacing between fins.
Syntax
fin_spacing = value
Parameters
• value
A floating point value that specifies the spacing between fins.
Description
A required multigate layer parameter that specifies the spacing between fins. This parameter is
used only in multigate layer definitions. The top-view of the fin_spacing is shown in
Figure 4-23.

Figure 4-23. fin_spacing of the multigate layer top-view

The side view of the fin_spacing is shown in Figure 4-24.

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MIPT Keyword Dictionary
fin_spacing

Figure 4-24. fin_spacing of the multigate layer side-view

For more information on the multigate layer definition, see Multigate.

Examples
fin_spacing = 0.016

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 MIPT Keyword Dictionary
fin_thickness

fin_thickness
Parameter for layer(s): multigate
A required multigate layer parameter used to specify the thickness of the fin.
Syntax
fin_thickness = value
Parameters
• value
A floating point value that specifies the thickness of the fin.
Description
A required multigate layer parameter that specifies the thickness of the fin. This parameter is
used only in multigate layer definitions. The fin_thickness is shown in Figure 4-25.

Figure 4-25. fin_thickness of the multigate layer

For more information on the multigate layer definition, see Multigate.

Examples
fin_thickness = 0.032

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MIPT Keyword Dictionary
fin_width

fin_width
Parameter for layer(s): multigate
A required multigate layer parameter used to specify the width of the fin.
Syntax
fin_width = value
Parameters
• value
A floating point value that specifies the width of the fin.
Description
A required multigate layer parameter that specifies the width of the fin. This parameter is used
only in multigate layer definitions. The top-view of the fin_width is shown in Figure 4-26.

Figure 4-26. fin_width of the multigate layer top-view

The side view of the fin_width is shown in Figure 4-27.

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 MIPT Keyword Dictionary
fin_width

Figure 4-27. fin_width of the multigate layer side-view

For more information on the multigate layer definition, see Multigate.

Examples
fin_width = 0.016

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MIPT Keyword Dictionary
gate_diffusion_layer_pair

gate_diffusion_layer_pair
Parameter for layer(s): multigate
A required list of one or more layer pairs used to specify which gate and diffusion layers can be
paired together to describe different device types with the same device parameters.
Syntax
gate_diffusion_layer_pair = ‘{’ (layer1 layer2) [(layer1 layer2)... ] ‘}’
Parameters
• (layer1 layer2)
A pair of gate and diffusion layers enclosed in parentheses used to describe a device.
Description
A required list of one or more layer pairs used to specify which gate and diffusion layers can be
paired together to describe different device types with the same device parameters. The list of
pairs must be specified in brackets; pairs must be specified in parentheses. This parameter is
used only in multigate layer definitions. For more information on the multigate layer definition,
see Multigate.

Examples
gate_diffusion_layer_pair = {(PGATE PDIFF) (NGATE NDIFF)}

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 MIPT Keyword Dictionary
gate_oxide_er

gate_oxide_er
Parameter for layer(s): multigate
A required multigate layer parameter used to specify the permittivity of the gate oxide.
Syntax
gate_oxide_er = value
Parameters
• value
A floating point value that specifies the permittivity of the gate oxide.
Description
A required multigate layer parameter that specifies the permittivity of the gate oxide. This
parameter is used only in multigate layer definitions. For more information on the multigate
layer definition, see Multigate.

Examples
gate_oxide_er = 6.0

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MIPT Keyword Dictionary
gate_oxide_side_t

gate_oxide_side_t
Parameter for layer(s): multigate
An optional multigate layer parameter used to specify the side thickness of the gate oxide.
Syntax
gate_oxide_side_t = value
Parameters
• value
A floating point value that specifies the side thickness of the gate oxide.
Description
An optional multigate layer parameter that specifies the side thickness of the gate oxide. This
parameter is used only in multigate layer definitions. The gate_oxide_side_t is shown in
Figure 4-28.

Figure 4-28. gate_oxide_side_t of the multigate layer

For more information on the multigate layer definition, see Multigate.

Examples
gate_oxide_side_t = 6.0

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 MIPT Keyword Dictionary
gate_oxide_top_t

gate_oxide_top_t
Parameter for layer(s): multigate
A required multigate layer parameter used to specify the top thickness of the gate oxide.
Syntax
gate_oxide_top_t = value
Parameters
• value
A floating point value that specifies the top thickness of the gate oxide.
Description
A required multigate layer parameter that specifies the top thickness of the gate oxide. This
parameter is used only in multigate layer definitions. The gate_oxide_top_t is shown in
Figure 4-29.

Figure 4-29. gate_oxide_top_t of the multigate layer

For more information on the multigate layer definition, see Multigate.

Examples
gate_oxide_top_t = 6.0

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MIPT Keyword Dictionary
gate_poly_side_t

gate_poly_side_t
Parameter for layer(s): multigate
An optional multigate layer parameter used to specify the gate poly thickness between the side
of the gate poly and the side of the gate oxide.
Syntax
gate_poly_side_t = value
Parameters
• value
A floating point value that specifies the gate poly thickness between the side of the gate poly
and the side of the gate oxide.
Description
An optional multigate layer parameter that specifies the gate poly thickness between the side of
the gate poly and the side of the gate oxide. This parameter is used only in multigate layer
definitions. The gate_poly_side_t is shown in Figure 4-30.

Figure 4-30. gate_poly_side_t of the multigate layer

For more information on the multigate layer definition, see Multigate.

Examples
gate_poly_side_t = 6.0

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 MIPT Keyword Dictionary
gate_poly_top_t

gate_poly_top_t
Parameter for layer(s): multigate
A required multigate layer parameter used to specify the gate poly thickness between the top of
the gate poly and the top of the gate oxide.
Syntax
gate_poly_top_t = value
Parameters
• value
A floating point value that specifies the gate poly thickness between the top of the gate poly
and the top of the gate oxide.
Description
A required multigate layer parameter that specifies the gate poly thickness between the top of
the gate poly and the top of the gate oxide. This parameter is used only in multigate layer
definitions. The gate_poly_top_t is shown in Figure 4-31.

Figure 4-31. gate_poly_top_t of the multigate layer

For more information on the multigate layer definition, see Multigate.

Examples
gate_poly_top_t = 6.0

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MIPT Keyword Dictionary
gate_to_cont_min_spacing

gate_to_cont_min_spacing
Parameter for layer(s): pcaux, seed
An optional pcaux and seed layer parameter for all contact types except diffusion contact. This
parameter specifies the minimum spacing between the gate poly layer and the diffusion contact
layer (the contact from diffusion to metal1).
Syntax
gate_to_cont_min_spacing = value
Parameters
• value
A floating point value used to specify the minimum spacing between the gate poly layer and
the diffusion contact layer.
Examples
gate_to_cont_min_spacing = 0.05

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 MIPT Keyword Dictionary
gate_to_cont_spacing_min

gate_to_cont_spacing_min
Parameter for layer(s): contact
An optional contact layer parameter for all contact types except diffusion contact. This
parameter specifies the minimum allowed gate to contact spacing.
Syntax
gate_to_cont_spacing_min = value
Parameters
• value
A floating point value used to specify the minimum allowed gate to contact spacing.
Examples
gate_to_cont_spacing_min = 0.05

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MIPT Keyword Dictionary
gate_to_LI1_min_spacing

gate_to_LI1_min_spacing
Parameter for layer(s): pcaux, seed
An optional pcaux and seed layer parameter for all contact types except diffusion contact. This
parameter specifies the minimum spacing between the gate poly layer and the li layer touching
the diffusion layer.
Syntax
gate_to_LI1_min_spacing = value
Parameters
• value
A floating point value used to specify the minimum spacing between the gate poly layer and
the li layer touching the diffusion layer.
Examples
gate_to_LI1_min_spacing = 0.05

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gate_to_LI2_min_spacing

gate_to_LI2_min_spacing
Parameter for layer(s): pcaux, seed
An optional pcaux and seed layer parameter for all contact types except diffusion contact. This
parameter specifies the minimum spacing between the gate poly layer and the second li layer.
Syntax
gate_to_LI2_min_spacing = value
Parameters
• value
An optional floating point value used to specify the minimum spacing between the gate poly
layer and the second li layer.
Examples
gate_to_LI2_min_spacing = 0.05

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MIPT Keyword Dictionary
gate_to_via_min_spacing

gate_to_via_min_spacing
Parameter for layer(s): pcaux, seed
An optional pcaux and seed layer parameter for all contact types except diffusion contact. This
parameter specifies the minimum spacing between the gate poly layer and the diffusion via
layer.
Syntax
gate_to_via_min_spacing = value
Parameters
• value
A floating point value used to specify the minimum spacing between the gate poly layer and
the diffusion via layer.
Examples
gate_to_via_min_spacing = 0.05

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gate_to_via_spacing_min

gate_to_via_spacing_min
Parameter for layer(s): via
An optional via layer parameter used to specify the minimum allowed gate to via spacing.
Syntax
gate_to_via_spacing_min = value
Parameters
• value
A floating point value used to specify the minimum allowed gate to via spacing.
Examples
gate_to_via_spacing_min = 0.05

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MIPT Keyword Dictionary
ground

ground
Type: Ground layer
Part of the layer definition syntax, the ground layer definition keyword is used to define the
electrical and physical characteristics of conducting ground layers. The ground keyword is
followed by an equal sign, a unique user-specified layer name, and a list of parameters enclosed
in required braces. Each parameter must appear on its own line. Layers of this type can be
specified multiple times.
Syntax
ground = layer_name {
thickness =z-direction_ metal_ thickness
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistivity = resistivity_value
r_sheet = sheet_resistance
thickness_type = absolute | relative
ztop = top_ z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
coplanar_min_spacing = value
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
max_width = maximum_allowed _metal_width
max_spacing = maximum_allowed_metal_spacing
layer_bias = bias_actual_width_relative_to_drawn_width
trap_style = top | middle | bottom # where trapezoid measurements are taken from
extra_width = extra-width_of_side_walls # for a conductor with a trapezoid shape
ronly_layers = ‘{’space_delimited_list_of_r-only_layer_names‘}’
density_window = ‘{’w1 h1 factor1‘}’ ... ‘{’wn hn factorn‘}’
copy = ‘{’space_delimited_list_of_layer_names‘}’
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• thickness
A required layer parameter that specifies the thickness of the metal layer in the z-direction.
• min_width
A required layer parameter that specifies the minimum allowed drawn width of metal
objects on this layer.

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 MIPT Keyword Dictionary
ground

• min_spacing
A required layer parameter that specifies the minimum allowed drawn spacing between
conductors on this layer.
• resistivity
A required layer parameter that specifies the nominal metal resistance for this layer. This
parameter cannot be specified with r_sheet.
• r_sheet
A required layer parameter that specifies the sheet resistance for the layer. This parameter
cannot be specified with resistivity.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• measured_from
An optional conducting layer parameter that measures zbottom or ztop relative to the
specified layer.
• coplanar_min_spacing
An optional conducting layer parameter that specifies the minimum spacing value between
coplanar layers.
• tc1
An optional parameter that specifies the resistance temperature1 coefficient.
• tc2
An optional parameter that specifies the resistance temperature2 coefficient.
• max_rlength
An optional conducting layer parameter that specifies the maximum length of a wire. This
parameter is used for resistance fracturing, which determines how many pieces a resistor
should be broken into for representation in a distributed network.
• max_width
An optional parameter that specifies the maximum allowed metal width.

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MIPT Keyword Dictionary
ground

• max_spacing
An optional parameter that specifies the maximum allowed metal spacing.
• layer_bias
An optional conducting layer parameter that specifies the bias of actual width relative to
drawn width.
• trap_style
An optional conducting layer parameter that defines where trapezoid measurements are
taken from. Permitted values are top, middle, or bottom.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
• extension
An optional conducting layer parameter that specifies the amount this layer extends past
diffusion or contact layers.
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).
• density_window
An optional conducting layer parameter specified as {w1h1factor1} ... {wnhnfactorn}. The
braces are required for grouping.
• copy
An optional conducting layer parameter that specifies a space delimited list of layer names
enclosed in braces ({ }) to be mapped to ground layers under the gate.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Examples
ground = my_ground {
zbottom = -0.01
thickness = 0.1
resistivity = 11
}

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 MIPT Keyword Dictionary
half_node_scale_factor

half_node_scale_factor
Type: Global Parameters
An optional global parameter that specifies the amount by which to scale the layout. It can only
be specified once.
Syntax
half_node_scale_factor = scale
Parameters
• scale
A positive floating point value used to specify the amount by which to scale the layout.
Description
Specifies the amount by which to scale the layout. Scaling affects a polygon’s width, length,
and spacing properties. Calibration does not scale the layout, but generates the PEX Magnify
SVRF statement with the specified scale value. The default is to not produce the PEX Magnify
statement.

Examples
Specifying the following global parameter in your .mipt file

half_node_scale_factor = 0.75

generates the following SVRF statement in your rules.C and rules.R files:

PEX MAGNIFY 0.75

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MIPT Keyword Dictionary
height

height
Parameter for layer(s): TSV
A required TSV layer parameter used to specify the height of the through silicon via.
Syntax
height = value
Parameters
• value
A floating point value that specifies the height of the through silicon via.
Description
A required TSV parameter that specifies the height of the through silicon via. This parameter is
used only in TSV layer definitions. The height is shown in Figure 4-32.

Figure 4-32. height of TSV Layer

For more information on TSV layer type, see TSV.

Examples
height = 10.4

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 MIPT Keyword Dictionary
hidden

hidden
Parameter for layer(s): all Layer Definitions
An optional layer parameter that controls whether or not the layer is encrypted in the calibrated
rule files. Can be used in all layer type definitions.
Syntax
hidden = false | true
Parameters
• false
Specifies not to encrypt the layer in the calibrated rule files. This is the default.
• true
Specifies to encrypt the layer in the calibrated rule files.
Examples
To encrypt the my_diel_mipt layer information in the calibrated rule files, specify hidden=true
in the layer definition:

dielectric = my_diel_mipt {
diel_type = mask
zbottom = 0.071
thickness = 11.0
eps = 1.69
hidden = true
}

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MIPT Keyword Dictionary
hollow_radius

hollow_radius
Parameter for layer(s): TSV
A required TSV layer parameter used to specify the radius of the hollow area for through silicon
via.
Syntax
hollow_radius = value
Parameters
• value
A floating point value used to specify the radius of the hollow area.
Description
A required TSV layer parameter that specifies the radius of the hollow area for through silicon
via. The hollow_radius measurement is shown in Figure 4-33.

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 MIPT Keyword Dictionary
hollow_radius

Figure 4-33. hollow_radius for TSV Layers

For more information on TSV layer type, see TSV.

Examples
Example 1
In Figure 4-33, Example 1 is an example of a solid TSV. In this case hollow radius is 0.

hollow_radius = 0

Example 2
In Figure 4-33, Example 2 is an example of a hollow TSV. In this case the hollow radius is a
non-zero value, for example:

hollow_radius = 0.87

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MIPT Keyword Dictionary
ignore_diff_intrinsic

ignore_diff_intrinsic
Parameter for layer(s): seed
An optional seed layer parameter that controls whether or not capacitance from diffusion to
ground is ignored by calibration when generating the calibrated rule files.
Syntax
ignore_diff_intrinsic = yes | no
Parameters
• yes
Specifies to ignore the capacitance from diffusion to ground. This is the default.
• no
Specifies to include the capacitance from diffusion to ground.
Description
The optional ignore_diff_intrinsic parameter controls whether or not capacitance from diffusion
to ground is ignored. For example, in Figure 4-34 the ignored capacitance would be from OD/
fin to ground.

Figure 4-34. Ignore_diff_intrinsic Parameter for Seed Layer

See Seed for more information on the seed layer type.

Examples
ignore_diff_intrinsic = no

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 MIPT Keyword Dictionary
ignore_diff_to_diff_under_poly

ignore_diff_to_diff_under_poly
Parameter for layer(s): pcaux, seed
An optional pcaux and seed layer parameter that controls whether or not diffusion to diffusion
under poly capacitance is ignored by calibration when generating the calibrated rule files.
Syntax
ignore_diff_to_diff_under_poly = yes | no
Parameters
• yes
Specifies to ignore the diffusion to diffusion under poly capacitance. This is the default.
• no
Specifies to include the diffusion to diffusion under poly capacitance.
Description
Figure 4-35 shows the capacitance controlled by the ignore_diff_to_diff_under_poly parameter.

Figure 4-35. Capacitance for Ignore_diff_to_diff_under_poly Parameter

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MIPT Keyword Dictionary
ignore_diff_to_diff_under_poly

Examples
seed = NAGATE3 {
thickness = 0.04300
min_width = 0.02700
min_spacing = 0.07200
resistivity = 1.6984
ignore_endcap = yes
ignore_diff_to_diff_under_poly = no
ignore_gate_to_diff = yes
}

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 MIPT Keyword Dictionary
ignore_endcap

ignore_endcap
Parameter for layer(s): pcaux, seed
An optional pcaux and seed layer parameter that controls whether or not poly extension to
source and drain coupling is ignored by calibration when generating the calibrated rule files.
Syntax
ignore_endcap = yes | no
Parameters
• yes
Specifies to ignore the poly extension to source and drain coupling.
• no
Specifies to include the poly extension to source and drain coupling. This is the default.
Description
Figure 4-36 shows the capacitance controlled by the ignore_endcap parameter.

Figure 4-36. Capacitance affected by Ignore_endcap Parameter

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MIPT Keyword Dictionary
ignore_endcap

Examples
seed = NAGATE3 {
thickness = 0.04300
min_width = 0.02700
min_spacing = 0.07200
resistivity = 1.6984
ignore_endcap = yes
ignore_diff_to_diff_under_poly = no
ignore_gate_to_diff = yes
}

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 MIPT Keyword Dictionary
ignore_gate_intrinsic

ignore_gate_intrinsic
Parameter for layer(s): seed
An optional seed layer parameter that controls whether or not capacitance from the gate poly
layer to ground is ignored by calibration when generating the calibrated rule files.
Syntax
ignore_gate_intrinsic = yes | no
Parameters
• yes
Specifies to ignore the capacitance from the gate poly layer to ground. This is the default.
• no
Specifies to include the capacitance from the gate poly layer to ground.
Description
The optional ignore_gate_intrinsic parameter controls whether or not capacitance from the gate
poly layer to ground is ignored. For example, in Figure 4-37 the ignored capacitance would be
from gate poly to ground.

Figure 4-37. Ignore_gate_intrinsic Parameter for Seed Layer

See Seed for more information on the seed layer type.

Examples
ignore_gate_intrinsic = no

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MIPT Keyword Dictionary
ignore_gate_to_diff

ignore_gate_to_diff
Parameter for layer(s): pcaux, seed
An optional pcaux and seed layer parameter that controls whether or not the coupling
capacitance between gates to diffusion is ignored by calibration when generating the calibrated
rule files.
Syntax
ignore_gate_to_diff = yes | no
Parameters
• yes
Specifies to add the coupling capacitance between gates to diffusion. This is the default.
• no
Specifies to subtract the coupling capacitance between gates to diffusion.
Description
Figure 4-38 shows the capacitance controlled by the ignore_gate_to_diff parameter.

Figure 4-38. Capacitance for Ignore_gate_to_diff Parameter

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 MIPT Keyword Dictionary
ignore_gate_to_diff

Examples
seed = NAGATE3 {
thickness = 0.04300
min_width = 0.02700
min_spacing = 0.07200
resistivity = 1.6984
ignore_endcap = yes
ignore_diff_to_diff_under_poly = no
ignore_gate_to_diff = yes
}

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MIPT Keyword Dictionary
ignore_gateext_to_diff

ignore_gateext_to_diff
Parameter for layer(s): pcaux, seed
An optional pcaux and seed layer parameter that controls whether or not the coupling
capacitance between the gate extension to diffusion and rsd is ignored by calibration when
generating the calibrated rule files.
Syntax
ignore_gateext_to_diff = yes | no
Parameters
• yes
Specifies to ignore the coupling capacitance between gate extension to diffusion and rsd.
• no
Specifies to include the coupling capacitance between gate extension to diffusion and rsd.
This is the default.
Description
Figure 4-39 shows the capacitance controlled by the ignore_gateext_to_diff parameter.

Figure 4-39. Capacitance for Ignore_gateext_to_diff Parameter

This parameter is ignored if it is set to yes with ignore_endcap parameter set to yes, and issues
the following warning:

WARNING: “Ignore the ignore_gateext_to_diff parameter. SVRF is generated

based on ignore_endcap parameter setting”.

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 MIPT Keyword Dictionary
ignore_gateext_to_diff

Examples
seed = NAGATE3 {
thickness = 0.04300
min_width = 0.02700
min_spacing = 0.07200
resistivity = 1.6984
ignore_gate_to_diff = no
ignore_gateext_to_diff = yes
}

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MIPT Keyword Dictionary
ignore_gateext_to_diff_only

ignore_gateext_to_diff_only
Parameter for layer(s):pcaux, seed
An optional pcaux and seed layer parameter that controls whether or not the coupling
capacitance between the gate extension to diffusion is ignored by calibration when generating
the calibrated rule files.
Syntax
ignore_gateext_to_diff_only = yes | no
Parameters
• yes
Specifies to ignore the coupling capacitance between gate extension to diffusion.
• no
Specifies to include the coupling capacitance between gate extension to diffusion. This is
the default.
Description
Figure 4-40 shows the capacitance controlled by the ignore_gateext_to_diff_only parameter.
Note that capacitance from the gate extension to diffusion is ignored regardless of how the
ignore_endcap parameter is specified.

Figure 4-40. Capacitance for Ignore_gateext_to_diff_only Parameter

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 MIPT Keyword Dictionary
ignore_gateext_to_diff_only

Examples
seed = NAGATE3 {
thickness = 0.04300
min_width = 0.02700
min_spacing = 0.07200
resistivity = 1.6984
ignore_gate_to_diff = no
ignore_gateext_to_diff_only = yes
}

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MIPT Keyword Dictionary
ignore_rsd

ignore_rsd
Parameter for layer(s): seed
An optional seed layer parameter that controls whether or not the poly to raised source/drain
coupling is ignored by calibration.
Syntax
ignore_rsd = yes | no
Parameters
• yes
Specifies to ignore the capacitance between the poly and raised source/drain layer.
• no
Specifies to include the capacitance between the poly and raised source/drain layer. This is
the default.
Description
The optional ignore_rsd parameter controls whether or not capacitance from the poly to raised
source/drain coupling is ignored. For example, in Figure 4-41 the ignored capacitance would be
from rsd to poly.

Figure 4-41. Capacitance for Ignore_rsd Parameter

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 MIPT Keyword Dictionary
ignore_rsd

Examples
seed = NAGATE3 {
thickness = 0.04300
min_width = 0.02700
min_spacing = 0.07200
resistivity = 1.6984
ignore_gate_to_diff = no
ignore_rsd = yes
}

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MIPT Keyword Dictionary
ignore_rsd_intrinsic

ignore_rsd_intrinsic
Parameter for layer(s): seed
An optional seed layer parameter that controls whether or not the capacitance between the
raised source/drain layer and ground is ignored by calibration.
Syntax
ignore_rsd_intrinsic = yes | no
Parameters
• yes
Specifies to ignore the capacitance between the raised source/drain layer and ground.
• no
Specifies to include the capacitance between the raised source/drain layer and ground. This
is the default.
Description
The optional ignore_rsd_intrinsic parameter controls whether or not capacitance from the rsd
layer to ground is ignored. For example, in Figure 4-42 the ignored capacitance would be from
rsd to ground.

Figure 4-42. Capacitance for Ignore_rsd_intrinsic Parameter

Examples
seed = NAGATE3 {
thickness = 0.04300
min_width = 0.02700
min_spacing = 0.07200
resistivity = 1.6984
ignore_gate_to_diff = no
ignore_rsd_intrinsic = yes
}

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 MIPT Keyword Dictionary
inductance_unit

inductance_unit
Type: Global Parameters
An optional global parameter that specifies the units for inductance values to use when
calculating the self inductance of vias.
Syntax
inductance_unit = unit
Parameters
• unit
A value that specifies the unit of inductance to use for calculating the self inductance of
vias.
Acceptable values are:
ah — attohenry
fh — femtohenry
ph — picohenry
nh — nanohenry
uh — microhenry
mh — millihenry
h — henry
The default is picohenry (ph).
Description
Calibration does not generate inductance calculations but sets the units used during inductance
extraction. The default is to not produce the Unit Inductance SVRF statement. For more
information on global parameters, see Global Parameters.

Examples
inductance_unit = ph

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MIPT Keyword Dictionary
insulator

insulator
Parameter for layer(s): TSV
An optional TSV layer parameter used to specify one or more insulators for the TSVs in the
process. The comma separated value pairs must be enclosed in braces ({ }). Insulators must be
described using either a conformal dielectric layer or with the insulator parameter.
Syntax
insulator = {{thickness1, ER1} {thickness2 , ER2 }... {thicknessn ERn}}
Parameters
• thickness
A floating point value used to specify the thickness of the insulator.
• ER
A floating point value used to specify the dielectric constant for the insulator.
Examples
Example 1
The following example is a TSV description using the insulator parameter for a TSV with one
insulator type where thickness of the insulator is 0.25 and the dielectric constant is 4.8:

tsv = my_tsv {
measured_from = base_M1
measured_to = BM
radius = 3.2
hollow_radius = 0
height = 48.5
top_enclosure = 4
bot_enclosure = 4
resistivity = 0.02
depletion_width = 0
insulator = {{0.25, 4.8}}
}

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 MIPT Keyword Dictionary
insulator

Example 2
This example defines a TSV insulator using a conformal dielectric layer. For example:

tsv = tsv {
measured_from = BM1
measured_to = M1
radius = 6.0
hollow_radius = 0
height = 50.50
top_enclosure = 0
bot_enclosure = 0
resistivity = 0.1
depletion_width = 0.5
}
dielectric = tsv_sidewall {
diel_type = conformal
thickness = 0.0
eps = 3.2
ref_layer = tsv
topthk = 0.0
swthk = 0.3
}

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MIPT Keyword Dictionary
layer_bias

layer_bias
Parameter for layer(s): conductor, device_li, diffusion, ground, li, poly, resistor, seed, src_drn
An optional conducting layer parameter that specifies the bias on the edge of metal objects with
respect to the drawn width of the layer.
Syntax
layer_bias = value
Parameters
• value
A positive or negative floating point value that specifies the bias on the edge of metal
objects with respect to the drawn width of the layer.
Description
Figure 4-43 illustrates the bias on the edge of metal objects with respect to the drawn width of
the layer.

Figure 4-43. Definition of Layer Bias

If there is no in-die table or opc bias table, then actual width uses the layer_bias setting as
follows:

actual_width = drawn_width + layer_bias

If there is an in-die table or opc bias table and layer_bias is specified, then the table setting is
used and the layer_bias setting is ignored.

The process variation of the width is described through variation data from the table. For more
information on process variation, see Process Variation. For more information on the
conducting layers, see Layer Definitions.

Examples
layer_bias = 0.50

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layer_name

layer_name
Layer Definitions syntax
Part of the layer definition syntax, this layer definition parameter specifies a required unique
user-specified name.
Syntax
layer_type = layer_name {
list_of_parameters
}
Parameters
• layer_type
A required parameter that specifies the layer type keyword. Valid layer type keywords
include Base, Dielectric, Conductor, Resistor, Ground, Derived, Poly, Diffusion, li,
Device_li, Contact, Via, Src_drn, Seed, and TSV. When you define a layer, the layer type
keyword must come first followed by an equal sign then the layer name. For more
information on layer types, see Layer Definitions.
• layer_name
A required unique user-specified name.
• list_of_parameters
This is the list of required and optional parameters which varies depending on the layer type.
For more information on what the list of parameters should be, refer to the list supplied for
the layer type you wish to specify.
Examples
In the following example the layer_name parameter is my_base_layer:

base = my_base_layer {
thickness = 1
ztop = 0.
}

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MIPT Keyword Dictionary
li

li
Type: li layer
Part of the layer definition syntax, the li layer definition keyword is used to define the electrical
and physical characteristics of local interconnect layers. The li keyword is followed by an equal
sign, a unique user-specified layer name, and a list of parameters enclosed in required braces.
Each parameter must appear on its own line. Layers of this type can be specified multiple times.
This layer definition is required when you are not performing RONLY extraction.
Syntax
li = layer_name {
thickness = z-direction_ metal_ thickness
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistivity = resistivity_value
r_sheet = sheet_resistance
metal_fill = ‘{’fill_ratio fill_spacing fill_width [floating | grounded] ‘}’
ztop = top_ z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
thickness_type = absolute | relative
coplanar_min_spacing = value
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
max_width = maximum_allowed _metal_width
max_spacing = maximum_allowed_metal_spacing
devices = ‘{’device1 device2 ... devicen‘}’ # a space delimited list of device names
layer_bias = bias_actual_width_relative_to_drawn_width
trap_style = top | middle | bottom # where trapezoid measurements are taken from
extra_width = extra-width_of_side_walls # for a conductor with a trapezoid shape
extension = amount_layer_extends_past_diffusion_or_contact_layers
device_li_layers = space_delimited_list_of_device_li_layer_names
ronly_layers = ‘{’space_delimited_list_of_r-only_layer_names‘}’
density_window = ‘{’w1 h1 factor1‘}’ ... ‘{’wnhn factorn‘}’
widths = ‘{’ w1 w2 w3 ... wn ‘}’
spacings = ‘{’ s1 s2 s3 ... sn ‘}’
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.

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 MIPT Keyword Dictionary
li

• thickness
A required layer parameter that specifies the thickness of the metal layer in the z-direction.
• min_width
A required layer parameter that specifies the minimum allowed drawn width of metal
objects on this layer.
• min_spacing
A required parameter that specifies the minimum allowed metal spacing.
• resistivity
A required layer parameter that specifies the nominal metal resistance for this layer. This
parameter cannot be specified with r_sheet.
• r_sheet
A required layer parameter that specifies the sheet resistance for the layer. This parameter
cannot be specified with resistivity.
• metal_fill
An optional conducting layer parameter. It is a set of values enclosed in braces, used to
define a list of virtual fill parameters.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• measured_from
An optional conducting layer parameter that measures zbottom or ztop relative to the
specified layer.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.
• coplanar_min_spacing
An optional conducting layer parameter that specifies the minimum spacing value between
coplanar layers.
• tc1
An optional parameter that specifies the resistance temperature1 coefficient.

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MIPT Keyword Dictionary
li

• tc2
An optional parameter that specifies the resistance temperature2 coefficient.
• max_rlength
An optional conducting layer parameter that specifies the maximum length allowed for
resistance fracturing.
• max_width
An optional parameter that specifies the maximum allowed metal width.
• max_spacing
An optional parameter that specifies the maximum allowed metal spacing.
• devices
An optional layer parameter that specifies a space delimited list of device names enclosed in
braces. This parameter is used to specify the devices the layer definition applies to.
• layer_bias
An optional conducting layer parameter that specifies the bias of actual width relative to
drawn width.
• trap_style
An optional conducting layer parameter that defines where trapezoid measurements are
taken from. Permitted values are top, middle, or bottom.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
• extension
An optional conducting layer parameter that specifies the amount this layer extends past
diffusion or contact layers.
• device_li_layers
An optional li layer parameter that specifies a space delimited list of device_li layer names
enclosed in braces ({ }).
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).
• density_window
An optional conducting layer parameter specified as {w1h1factor1} ... {wnhnfactorn}. The
braces are required for grouping.

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 MIPT Keyword Dictionary
li

• widths
An optional conducting layer parameter that specifies a space delimited list of floating point
width values enclosed in braces ({ }).
• spacings
An optional conducting layer parameter that specifies a space delimited list of floating point
spacing values enclosed in braces ({ }).
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Examples
li = li_1 {
ztop = 0.0
measured_from = poly_diel7
thickness = 0.09
min_width = 0.045
min_spacing = 0.045
resistivity = 0.0366
tc1 = use my_Mx_layers_tc1
tc2 = use my_Mx_layers_tc2
}

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MIPT Keyword Dictionary
li_device_model

li_device_model
Type: Global Parameters
An optional global parameter that defines the type of local interconnect model generated by
calibration.
Syntax
li_device_model = default | single_li_layer | dual_li_layer_model1 | dual_li_layer_model2
Parameters
• default
Specifies the CMOS device model. This is the default if this keyword is not specified.
• single_li_layer
Specifies a single layer LI model for an SOI process.
• dual_li_layer_model1
Specifies a two layer LI model which includes gate to diffusion coupling.
• dual_li_layer_model2
Specifies a two layer LI model which excludes gate to diffusion coupling.
Description
Legal values for li_device_model are default, single_li_layer, dual_li_layer_model1, or
dual_li_layer_model2. The number of LI layers defined in the MIPT file must match the
number of layers allowed for the specified li_device_model parameter. If the number of layers
for the parameter do not match the number of LI layers in the MIPT file, then an error message
is generated.

If this parameter is not specified, then the CMOS device model is used by default. If this
parameter is specified, but there are no LI layers in the MIPT file, no errors or warnings are
generated and the effect of the parameter is ignored. This parameter can only be specified once.
For more information on global parameters, see Global Parameters.

Examples
Example 1
Include the following global parameter definition in your MIPT file to specify two LI layers
which include gate to diffusion coupling:

li_device_model = dual_li_layers_model1

Example 2
If more than one definition appears in the MIPT file:

li_device_model = dual_li_layers_model1
li_device_model = dual_li_layers_model2

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 MIPT Keyword Dictionary
li_device_model

The following error message is issued by the checker:

Error XCAL_2_002: MIPT Parser Error: “The parameter li_device_model is

defined more than once: li_device_model = dual_li_layers_model2” near line
5 in file tech_45nm_2_0.mipt.

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MIPT Keyword Dictionary
li_layers

li_layers
Parameter for layer(s): device_li
An optional device_li layer parameter that specifies a space delimited list of li layer names used
to associate the device_li layer with other li layers. Use this parameter to maintain proper
physical connectivity between coplanar layers after applying bias.
Syntax
li_layers = {li_layer_name1 li_layer_name2 ... li_layer_namen}
Parameters
• {li_layer_name1 li_layer_name2 ... li_layer_namen}
A space delimited list of li layer names enclosed in braces ({ }).
Examples
device_li = M0_OD1 {
thickness = 0.09
min_width = 0.045
min_spacing = 0.045
resistivity = 0.672
layer_bias = -0.0070
measured_from = ILD_nm
zbottom = 0
li_layers = {M0_ST1}
}

li = M0_ST1 {
min_width = 0.02600
min_spacing = 0.05800
resistivity = 0.67
measured_from = FOX
zbottom = 0
}

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max_area

max_area
Parameter for layer(s): via
An optional parameter used by via layers that specifies the area threshold in square microns for
large area via connections.
Syntax
max_area = value
Parameters
• value
A value used to specify the area threshold for large area via connections in square microns.
Description
Use this parameter in your via layer definitions to control how vias are modeled. During
calibration, this parameter sets the MAXAREA parameter in the PEX Resistance Parameters
statement for the via layer. See Via layer type for a complete list of via layer definition
parameters.

Examples
max_area = 150

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MIPT Keyword Dictionary
max_length

max_length
Parameter for layer(s): via
An optional parameter used by via layers that specifies the maximum distance in microns
between distributed vias.
Syntax
max_length = value
Parameters
• value
A value used to specify the maximum distance between distributed vias in microns.
Description
Use this parameter in your via layer definitions to control the distribution of reduced vias. The
distance between the distributed vias will not exceed this limit. During calibration, this
parameter sets the MAXLENGTH parameter in the PEX Resistance Parameters statement for
the via layer. See Via layer type for a complete list of via layer definition parameters.

Examples
max_length = 50

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 MIPT Keyword Dictionary
max_rlength

max_rlength
Parameter for layer(s): conductor, derived, device_li, diffusion, ground, li, pcaux, poly, resistor,
seed, src_drn
An optional conducting layer parameter that specifies the maximum length of a wire to use
when calculating how many pieces a resistor should be broken into for representation in a
distributed network.
Syntax
max_rlength = value
Parameters
• value
A value used to specify the maximum length of a wire to use when calculating how many
pieces a resistor should be broken into.
Description
If this parameter is unset, it defaults to a value of 0 and the parasitic resistors are limited to 100
microns (um) in length. Two-dimensional fracturing is not performed (no width fracturing).
Leaving this parameter unset is suitable for interconnect layers such as polysilicon and metal.

If this parameter is set to a value, then a two-dimensional grid is created, with a maximum
length of each resistor being set to the specified value. This is appropriate for substrate layers
such as nwell and psub.

For more information on the conducting layers, see Layer Definitions.

Examples
max_rlength = 100

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MIPT Keyword Dictionary
max_spacing

max_spacing
Parameter for layer(s): conductor, device_li, diffusion, ground, li, pcaux, poly, resistor, seed,
src_drn
An optional conducting layer parameter that specifies the maximum allowed metal spacing.
Syntax
max_spacing = value
Parameters
• value
A floating point value used to specify the maximum allowed metal spacing.
Examples
max_spacing = 0.50

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max_width

max_width
Parameter for layer(s): conductor, device_li, diffusion, ground, li, pcaux, poly, resistor, seed,
src_drn
An optional conducting layer parameter that specifies the maximum allowed metal width.
Syntax
max_width = value
Parameters
• value
A floating point value used to specify the maximum allowed metal width.
Examples
max_width = 0.50

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MIPT Keyword Dictionary
measured_from

measured_from
Parameter for layer(s): optional for conductor, device_li, dielectric, diffusion, ground, li, pcaux,
poly, resistor, seed, src_drn; required by contact, TSV, ubump, via.
A layer parameter that specifies the layer whose top surface is used as the base from which the
layer’s bottom is measured.
Syntax
measured_from = layername
Parameters
• layername
A string value used to specify the name of the layer whose top surface is used as the base
from which the layer’s bottom is measured.
Description
For a conformal dielectric layer, the top is from the planar part. For a trench dielectric layer, the
top is from the bottom of the reference layer. The measured_from parameter can only reference
layers lower in the stack. For more information on dielectric layer definition, see Dielectric.

For contact and via layers, this is a required parameter that specifies the lower conductor layer
name. For more information on contact layer definition, see Contact. For more information on
via layer definition, see Via.

For TSV layers, this is a required parameter that specifies the back side metal layer name that
the TSV connects to. For more information on TSV layer definition, see TSV.

For ubump layers the parameter specifies the bottom most layer that the uBump connects to.
The parameters measured_from and measured_to are interchangeable for ubump layers.

Examples
measured_from = poly1

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measured_to

measured_to
Parameter for layer(s): contact, TSV, ubump, via
A required layer parameter that must be specified for contact, TSV, via, and ubump layer
definitions.
Syntax
measured_to = layername
Parameters
• layername
A string value used to specify the upper conductor layer name for contact and via layer type,
the front metal layer for TSV layer type, or top most layer for ubump layer type.
Description
For contact and via layers the parameter specifies the layer whose top surface is used as the base
from which the layer’s bottom is measured. For TSV layers the parameter specifies the front
metal layer that the TSV connects to. For ubump layers the parameter specifies the top most
layer that the ubump connects to. The parameters measured_from and measured_to are
interchangeable for ubump layers.

Examples
measured_to = metal1

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MIPT Keyword Dictionary
metal_fill

metal_fill
Parameter for layer(s): conductor, device_li, diffusion, li, pcaux, poly, resistor, seed, src_drn
An optional conducting layer parameter used to define a list of virtual fill parameters. The
virtual fill parameters are specified as a set of values enclosed in braces ({ }).
Syntax
metal_fill = ‘{’fill_ratio fill_spacing fill_width [floating | grounded]‘}’
Parameters
• fill_ratio
A positive floating point number in the range [0..1], used as minimum density value by
virtual fill model.
• fill_spacing
A positive floating point number.
• fill_width
A positive floating point number.
• [floating | grounded]
A literal value used to specify the type of fill as either floating or grounded.
Examples
metal_fill = {0.9 0.1 0.5 grounded}

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 MIPT Keyword Dictionary
mid_width

mid_width
Parameter for layer(s): ubump
A required parameter that specifies the middle metal width of the ubump layer.
Syntax
mid_width =value
Parameters
• value
A required floating point value used to specify the middle metal width of the ubump.
Description
In Figure 4-44, mid_width is the widest diameter of the ubump.

Figure 4-44. mid_width of ubump

Examples
mid_width = 1.7

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MIPT Keyword Dictionary
min_length

min_length
Parameter for layer(s): contact, via
An optional parameter used by via or contact layers that specifies the length of the shape. From
a dimension perspective, min_width is the shortest side, while min_length is the longest side.
This parameter can be used together with min_width parameter, but cannot be used with the
area parameter. The shape is assumed to be rectangular, with dimensions of min_width *
min_length.
Syntax
min_length = value
Parameters
• value
A floating point value used to specify the length of the shape in distance_units.
Examples
min_length = 0.15

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min_spacing

min_spacing
Parameter for layer(s): conductor, contact, device_li, diffusion, ground, li, pcaux, poly, resistor,
seed, src_drn, via
A required parameter for conducting layer definitions conductor, device_li, diffusion, ground,
li, pcaux, poly, and resistor that specifies the minimum drawn spacing of metal objects on this
layer. This parameter is optional for seed and src_drn layer definitions. For contact and via layer
definitions, this parameter is required to specify the spacing between vias (or contacts) and
conductors on their respective layers.
Syntax
min_spacing = value
Parameters
• value
A required floating point value used to specify the minimum drawn spacing of metal objects
on this layer.
Examples
min_spacing = 0.125

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MIPT Keyword Dictionary
min_width

min_width
Parameter for layer(s): conductor, contact, device_li, diffusion, ground, li, pcaux, poly, resistor,
seed, src_drn, ubump, via
A required parameter for conducting layer definitions conductor, contact, device_li, diffusion,
ground, li, pcaux, poly, resistor, via, and ubump that specifies the minimum drawn width of
metal objects on this layer. This parameter is optional for seed and src_drn layer definitions.
Syntax
min_width = value
Parameters
• value
A required floating point value used to specify the minimum drawn width of metal objects
on this layer.
Examples
min_width = 0.17

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 MIPT Keyword Dictionary
mipt_version

mipt_version
Type: Global Parameters
A required global parameter that specifies the version of the MIPT syntax used in the MIPT file.
It can only be specified once.
Syntax
mipt_version = version_number
Parameters
• version_number
A value used to specify the version number of the MIPT syntax used in the file. The value
must be 2.0.
Examples
mipt_version = 2.0

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MIPT Keyword Dictionary
multigate

multigate
Type: Multigate layer
Part of the layer definition syntax, this optional layer definition keyword is used to define the
electric and physical characteristics of a multigate device. The multigate keyword is followed
by an equal sign, a unique user-specified layer name, and a list of parameters enclosed in
required braces. Each parameter must appear on its own line. Layers of this type can be
specified multiple times in the MIPT file.
Syntax
multigate = layer_name {
fin_spacing = space_between_fins
fin_width = width_of_fin
fin_length = length_of_fin
fin_thickness = thickness_of_fin
gate_oxide_er = gate_oxide_permittivity
gate_oxide_top_t = gate_oxide_top_thickness
gate_oxide_side_t = gate_oxide_side_thickness
gate_poly_top_t = poly_top_thickness
gate_poly_side_t = poly_side_thickness
channel_er = permittivity_diff_value
gate_diffusion_layer_pair = ‘{’ list_of_one_or_more_layer_pairs‘}’
rsd_enclosure = raised_source/drain_edge_bias
rsd_thickness = raised_source/drain_height
rsd_spacing = raised_source/drain_to_gate_spacing
trench_contact_extension_length = value
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• fin_spacing
A required layer parameter that specifies the space between fins.
• fin_width
A required layer parameter that specifies the width of the fin.
• fin_length
A required layer parameter that specifies the length of the fin.
• fin_thickness
A required layer parameter that specifies the thickness of the fin.

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 MIPT Keyword Dictionary
multigate

• gate_oxide_er
A required layer parameter that specifies the permittivity of the gate oxide.
• gate_oxide_top_t
A required layer parameter that specifies the top thickness of the gate oxide.
• gate_oxide_side_t
An optional layer parameter that specifies the side thickness of the gate oxide.
• gate_poly_top_t
A required layer parameter that specifies the gate poly thickness between the top of the gate
poly and the top of the gate oxide.
• gate_poly_side_t
An optional layer parameter that specifies the gate poly thickness between the side of the
gate poly and the side of the gate oxide.
• channel_er
An optional layer parameter that specifies the difference in permittivity of the gate oxide
and its lateral side.
• gate_diffusion_layer_pair
A required list of one or more layer pairs used to specify which gate and diffusion layers can
be paired together to describe different device types with the same device parameters. The
list of pairs must be specified in brackets; pairs must be specified in parentheses.
• rsd_enclosure
An optional layer parameter that specifies the raised source/drain edge bias.
• rsd_thickness
An optional conducting layer parameter that specifies the raised source/drain height.
• rsd_spacing
An optional conducting layer parameter that specifies the raised source/drain to gate
spacing.
• trench_contact_extension_length
An optional layer parameter that specifies the nominal extension of the trench contact
beyond the diffusion.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.

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MIPT Keyword Dictionary
multigate

Examples
multigate = fin1 {
fin_spacing = 0.016
fin_width = 0.016
fin_length = 0.032
fin_thickness = 0.010
gate_oxide_top_t = 0.006
gate_oxide_er = 4.0
gate_poly_top_t = 0.008
channel_er = 6.0
gate_diffusion_layer_pair = {(PGATE PDIFF) (NGATE NDIFF)}
}

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multigate parameter

multigate parameter
Parameter for layer(s): pcaux, seed
An optional seed layer parameter used to control which default model for FinFETs is used
during calibration.
Syntax
multigate = ignore | trim
Parameters
• ignore
A keyword that specifies to replace diffusion with a dummy volume under raised source/
drain.
• trim
A keyword that specifies to keep diffusion under the raised source/drain (rsd) and not extend
to gate.
Examples
multigate = trim

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MIPT Keyword Dictionary
pad

pad
Type: Pad layer
Part of the layer definition syntax, this optional layer definition keyword is used to define a
conductor layer used to describe a CBUMP layer that has no routing, typically a square or round
shape. The pad keyword is followed by an equal sign, a unique user-specified layer name, and a
list of parameters enclosed in required braces. Each parameter must appear on its own line. Via
table types VRESISTANCE, VWIDTH, and VLENGTH can be specified in this layer type.
Syntax
pad = layer_name {
thickness = z_direction_metal_thickness
min_width =minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistivity = resistivity_value
r_sheet = sheet_resistance
metal_fill = ‘{’fill_ratio fill_spacing fill_width [floating | grounded]‘}’
thickness_type = absolute | relative
ztop = top_ z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
coplanar_min_spacing = value
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
max_width = maximum_allowed _metal_width
max_spacing = maximum_allowed_metal_spacing
layer_bias = bias_actual_width_relative_to_drawn_width
capacitive_only_etch = layer_bias_for_capacitance_only
trap_style = top | middle | bottom # where trapezoid measurements are taken from
extra_width = extra-width_of_side_walls #for a conductor with a trapezoid shape
extension = amount_layer_extends_past_diffusion_or_contact_layers
ronly_layers = ‘{’space_delimited_list_of_r-only_layer_names‘}’
density_window = ‘{’w1 h1 factor1‘}’ ... ‘{’wn hn factorn‘}’
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• thickness
A required layer parameter that specifies the thickness of the metal layer in the z-direction.

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 MIPT Keyword Dictionary
pad

• min_width
A required layer parameter that specifies the minimum allowed drawn width of metal
objects on this layer.
• min_spacing
A required layer parameter that specifies the minimum allowed drawn spacing between
conductors on this layer.
• resistivity
A required layer parameter that specifies the nominal metal resistance for this layer. This
parameter cannot be specified with r_sheet.
• r_sheet
A required layer parameter that specifies the sheet resistance for the layer. This parameter
cannot be specified with resistivity.
• metal_fill
An optional conducting layer parameter. It is a set of values enclosed in braces, used to
define a list of virtual fill parameters.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• measured_from
An optional conducting layer parameter that measures zbottom or ztop relative to the
specified layer.
• coplanar_min_spacing
An optional conducting layer parameter that specifies the minimum spacing value between
coplanar layers.
• tc1
An optional conducting layer parameter that specifies the resistance temperature1
coefficient.

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MIPT Keyword Dictionary
pad

• tc2
An optional conducting layer parameter that specifies the resistance temperature2
coefficient.
• max_rlength
An optional conducting layer parameter that specifies the maximum length of a wire. This
parameter is used for resistance fracturing, which determines how many pieces a resistor
should be broken into for representation in a distributed network.
• max_width
An optional parameter that specifies the maximum allowed metal width.
• max_spacing
An optional parameter that specifies the maximum allowed metal spacing.
• layer_bias
An optional conducting layer parameter that specifies the bias of actual width relative to
drawn width.
• capacitive_only_etch
An optional parameter that specifies the layer bias for capacitance only.
• trap_style
An optional conducting layer parameter that defines where trapezoid measurements are
taken from. Permitted values are top, middle, or bottom.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
• extension
An optional conducting layer parameter that specifies the amount this layer extends past
diffusion or contact layers.
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).
• density_window
An optional conducting layer parameter specified as {w1 h1 factor1} ... {wn hn factorn}. The
braces are required for grouping.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.

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 MIPT Keyword Dictionary
pad

Examples
pad = pad1_layer {
thickness = 0.1
min_width = 0.1
min_spacing = 0.25
resistivity = 8.3
}

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MIPT Keyword Dictionary
parallel_to_gate

parallel_to_gate
Parameter for layer(s): via
An optional parameter used by via layers that specifies how the via width and length are
measured.
Syntax
parallel_to_gate = no | yes
Parameters
• no
Specifies the width is the shorter edge. This is the default.
• yes
Specifies the length is the edge parallel to the gate and the width is the edge perpendicular to
the gate.
Description
Use this parameter in your via layer definitions to describe how the via width and length are
measured. For rectangular vias, the width is typically taken to be the shorter value from the
width and length values. For smaller geometries certain via lengths may be shorter than the
width, so specify the parallel_to_gate parameter set to yes to override the default behavior. See
Via layer type for a complete list of via layer definition parameters.

Examples
parallel_to_gate = yes

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 MIPT Keyword Dictionary
pcaux

pcaux
Type: PCaux layer
Part of the layer definition syntax, this optional layer definition keyword is used to define a
floating (non-gate) poly layer abutting the diffusion in between or at the end of a device. The
pcaux keyword is followed by an equal sign, a unique user-specified layer name, and a list of
parameters enclosed in required braces. Each parameter must appear on its own line.
Syntax
pcaux = layer_name {
thickness = z-direction_metal_ thickness
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistivity = resistivity_value
r_sheet = sheet_resistance
metal_fill = ‘{’ fill_ratio fill_spacing fill_width [floating | grounded] ‘}’
ztop = top_z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
thickness_type = absolute | relative
coplanar_min_spacing = value
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
max_width = maximum_allowed _metal_width
max_spacing = maximum_allowed_metal_spacing
multigate = ignore | trim
devices = ‘{’device1device2 ... devicen‘}’ # a space delimited list of device names
layer_bias = bias_actual_width_relative_to_drawn_width
trap_style = top | middle | bottom # where trapezoid measurements are taken from
extra_width = extra-width_of_side_walls # for a conductor with a trapezoid shape
extension = amount_layer_extends_past_diffusion_or_contact_layers
ronly_layers = ‘{’space_delimited_list_of_r-only_layer_names‘}’
density_window = ‘{’w1h1 factor1‘}’ ... ‘{’wnhn factorn‘}’
seed_layers = ‘{’space_delimited_list_of_seed_layer_names‘}’
gate_to_cont_min_spacing = minimum_spacing_between_gate/poly_and_diffusion_contact
gate_to_via_min_spacing = minimum_spacing_between_gate/poly_and_diffusion_via
gate_to_LI1_min_spacing = minimum_spacing_between_gate/poly_and_li_layer
gate_to_LI2_min_spacing = minimum_spacing_between_gate/poly_and_second_li_layer
ignore_diff_to_diff_under_poly = yes | no
ignore_endcap = yes | no
ignore_gate_to_diff = yes | no
ignore_gateext_to_diff = yes | no
ignore_gateext_to_diff_only = yes | no
rsd_enclosure = raised_source/drain_edge_bias

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pcaux

rsd_thickness = raised_source/drain_height
rsd_spacing = raised_source/drain_to_gate_spacing
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• thickness
A required layer thickness parameter.
• min_width
A required layer parameter that specifies the minimum allowed drawn width of metal
objects on this layer.
• min_spacing
A required layer parameter that specifies the minimum allowed metal spacing.
• resistivity
An optional layer parameter that specifies the nominal metal resistance for this layer. This
parameter cannot be specified with r_sheet.
• r_sheet
An optional layer parameter that specifies the sheet resistance for the layer. This parameter
cannot be specified with resistivity.
• metal_fill
An optional conducting layer parameter. It is a set of values enclosed in braces, used to
define a list of virtual fill parameters.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• measured_from
An optional conducting layer parameter that measures zbottom or ztop relative to the
specified layer.

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 MIPT Keyword Dictionary
pcaux

• coplanar_min_spacing
An optional conducting layer parameter that specifies the minimum spacing value between
coplanar layers.
• tc1
An optional parameter that specifies the resistance temperature1 coefficient.
• tc2
An optional parameter that specifies the resistance temperature2 coefficient.
• max_rlength
An optional conducting layer parameter that specifies the maximum length allowed for
resistance fracturing.
• max_width
An optional parameter that specifies the maximum allowed metal width.
• max_spacing
An optional parameter that specifies the maximum allowed metal spacing.
• multigate
An optional parameter that specifies which default multigate model for FinFETs should be
used during calibration.
• devices
An optional layer parameter that specifies a space delimited list of device names enclosed in
braces. This parameter is used to specify the devices the layer definition applies to.
• layer_bias
An optional conducting layer parameter that specifies the bias of actual width relative to
drawn width.
• trap_style
An optional conducting layer parameter that defines where trapezoid measurements are
taken from. Permitted values are top, middle, or bottom.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
• extension
An optional conducting layer parameter that specifies the amount this layer extends past
diffusion or contact layers.
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).

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pcaux

• density_window
An optional conducting layer parameter specified as {w1h1factor1} ... {wnhnfactorn}. The
braces are required for grouping.
• seed_layers
An optional layer parameter that specifies one or more gate layers referred to as seed layers,
enclosed in braces ({ }). This parameter can only be specified for a poly or seed layer type.
• gate_to_cont_min_spacing
An optional layer parameter that specifies the minimum spacing between the gate poly layer
and the diffusion contact layer.
• gate_to_via_min_spacing
An optional layer parameter that specifies the minimum spacing between the gate poly layer
and the diffusion via layer.
• gate_to_LI1_min_spacing
An optional layer parameter that specifies the minimum spacing between the gate poly layer
and the li layer touching the diffusion layer.
• gate_to_LI2_min_spacing
An optional layer parameter that specifies the minimum spacing between the gate poly layer
and the second li layer touching the diffusion layer.
• ignore_diff_to_diff_under_poly
An optional parameter set to either yes or no, that controls whether or not diffusion to
diffusion under poly capacitance is ignored by calibration. The default is yes, if this
parameter is not specified.
• ignore_endcap
An optional parameter set to either yes or no, that controls whether or not poly extension to
source and drain coupling is ignored by calibration. The default is no, if this parameter is not
specified.
• ignore_gate_to_diff
An optional parameter set to either yes or no, that controls whether or not the coupling
capacitance between gates to diffusion is ignored by calibration. The default is yes, if this
parameter is not specified.
• ignore_gateext_to_diff
An optional parameter set to either yes or no, that controls whether or not the coupling
capacitance between the gate extension to diffusion and rsd is ignored by calibration. The
default is no, if this parameter is not specified.

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 MIPT Keyword Dictionary
pcaux

• ignore_gateext_to_diff_only
An optional parameter set to either yes or no, that controls whether or not the coupling
capacitance between the gate extension to diffusion is ignored by calibration. The default is
no, if this parameter is not specified.
• rsd_enclosure
An optional layer parameter that specifies the raised source/drain edge bias.
• rsd_thickness
An optional layer parameter that specifies the raised source/drain height.
• rsd_spacing
An optional layer parameter that specifies the raised source/drain to gate spacing.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Description
A pcaux (cfpoly) layer is an interconnect field poly between two devices whose thickness is the
same as field poly and that is treated as a floating net. The width bias, high K gate oxide is
different from field poly. For more information on pcaux layers, see PCaux.

Examples
Use a pcaux layer to specify a dummy interconnect field poly layer. For example:

pcaux = my_cpode_gate {
measured_from = ppoly
zbottom = 0
thickness = 0.005
rsd_spacing = 0.01
min_width = 0.05
min_spacing = 0.075
devices - {pmos1 pmos2}
gate_to_cont_min_spacing - 0.012
resistivity = 7.8
tc1 =0
tc2 =0
}

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MIPT Keyword Dictionary
plate_loading

plate_loading
Type: Global Parameters
An optional global parameter that specifies whether the models and rules apply loading effects
to very wide wires or large plates. Setting plate_loading to yes turns on modeling of bottom
plane thickness variation, also known as loading. By default, plate_loading is set to no. This
option applies to all conductor layers that have thickness_bot tables. The plate_loading
parameter can only be specified once.
Syntax
plate_loading = yes | no
Parameters
• yes
Specifies to apply loading effects to plates. This setting turns on modeling of bottom plane
thickness variation, also known as loading.
• no
Specifies that loading effects are not applied to plates. This is the default behavior.
Examples
plate_loading = yes

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 MIPT Keyword Dictionary
poly

poly
Type: Poly layer
Part of the layer definition syntax, the poly layer definition keyword is used to define the
electrical and physical characteristics of conducting layers. The poly keyword is followed by an
equal sign, a unique user-specified layer name, and a list of parameters enclosed in required
braces. Each parameter must appear on its own line. Layers of this type can be specified
multiple times. This layer definition is required when you are not performing RONLY
extraction.
Syntax
poly = layer_name {
thickness = z-direction_metal_ thickness
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistivity = resistivity_value
r_sheet = sheet_resistance
metal_fill = ‘{’ fill_ratio fill_spacing fill_width [floating | grounded] ‘}’
ztop = top_ z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
thickness_type = absolute | relative
coplanar_min_spacing = value
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
max_width = maximum_allowed _metal_width
max_spacing = maximum_allowed_metal_spacing
devices = ‘{’device1 device2 ... devicen‘}’ # a space delimited list of device names
layer_bias = bias_actual_width_relative_to_drawn_width
capacitive_only_etch = layer_bias_for_capacitance_only
trap_style = top | middle | bottom # where trapezoid measurements are taken from
extra_width = extra-width_of_side_walls # for a conductor with a trapezoid shape
extension = amount_layer_extends_past_diffusion_or_contact_layers
ronly_layers = ‘{’space_delimited_list_of_r-only_layer_names‘}’
density_window = ‘{’w1h1 factor1‘}’ ... ‘{’wnhn factorn‘}’
seed_layers = ‘{’space_delimited_list_of_seed_layer_names‘}’
widths = ‘{’ w1 w2 w3 ... wn ‘}’
spacings = ‘{’ s1 s2 s3 ... sn ‘}’
hidden = false | true
}

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MIPT Keyword Dictionary
poly

Parameters
• layer_name
A required unique user-specified name.
• thickness
A required layer parameter that specifies the thickness of the metal layer in the z-direction.
• min_width
A required layer parameter that specifies the minimum allowed drawn width of metal
objects on this layer.
• min_spacing
A required parameter that specifies the minimum allowed metal spacing.
• resistivity
A required layer parameter that specifies the nominal metal resistance for this layer. This
parameter cannot be specified with r_sheet.
• r_sheet
A required layer parameter that specifies the sheet resistance for the layer. This parameter
cannot be specified with resistivity.
• metal_fill
An optional conducting layer parameter. It is a set of values enclosed in braces, used to
define a list of virtual fill parameters.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• measured_from
An optional conducting layer parameter that measures zbottom or ztop relative to the
specified layer.
• coplanar_min_spacing
An optional conducting layer parameter that specifies the minimum spacing value between
coplanar layers.

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 MIPT Keyword Dictionary
poly

• tc1
An optional parameter that specifies the resistance temperature1 coefficient.
• tc2
An optional parameter that specifies the resistance temperature2 coefficient.
• max_rlength
An optional conducting layer parameter that specifies the maximum length allowed for
resistance fracturing.
• max_width
An optional parameter that specifies the maximum allowed metal width.
• max_spacing
An optional parameter that specifies the maximum allowed metal spacing.
• devices
An optional layer parameter that specifies a space delimited list of device names enclosed in
braces. This parameter is used to specify the devices the layer definition applies to.
• layer_bias
An optional conducting layer parameter that specifies the bias of actual width relative to
drawn width.
• capacitive_only_etch
An optional parameter that specifies the layer bias for capacitance only.
• trap_style
An optional conducting layer parameter that defines where trapezoid measurements are
taken from. Permitted values are top, middle, or bottom.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
• extension
An optional conducting layer parameter that specifies the amount this layer extends past
diffusion or contact layers.
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).
• density_window
An optional conducting layer parameter specified as {w1h1factor1} ... {wnhnfactorn}. The
braces are required for grouping.

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poly

• seed_layers
An optional layer parameter that specifies one or more gate layers referred to as seed layers,
enclosed in braces ({ }). This parameter may only be specified for a poly or seed layer type.
• widths
An optional conducting layer parameter that specifies a space delimited list of floating point
width values enclosed in braces ({ }).
• spacings
An optional conducting layer parameter that specifies a space delimited list of floating point
spacing values enclosed in braces ({ }).
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Examples
Example 1
This example specifies a poly layer named ipoly:

poly = ipoly {
thickness = 0.005
min_width = 0.05
min_spacing = 0.075
r_sheet = 7.8
}

Example 2
In this example a new poly layer, my_poly, is created from an existing poly layer Mx using the
Use Directive. The “with” modifier overrides existing properties and adds new properties to the
my_poly layer definition.

poly = my_poly use Mx with {

ztop = 0.0
measured_from = poly_diel7
thickness = 0.09
min_width = 0.045
min_spacing = 0.045
resistivity = 0.0366
}

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 MIPT Keyword Dictionary
process

process
Type: Global Parameters
A required global parameter used to create filenames and directories of results. It can only be
specified once. It must be a single string without spaces or special characters.
Syntax
process = name
Parameters
• name
A single string without spaces or special characters used to specify the name of the
manufacturing technology (process) being used.
Examples
process = my_process_1

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MIPT Keyword Dictionary
property

property
table structure parameter
A required table structure parameter that specifies the property type of the table.
Syntax
property = table_property
Parameters
• table_property
A required value that specifies the property type of the table.
Description
Specifies the property type of the table for the layer. Each table property has a specific set of
ordered variables associated with them. For a complete list of valid table_property types and
their associated settings refer to “Table Property” on page 92. For more information on table
property, see “Table Property” on page 92.

Examples
This is an example of a conductor layer with a width table defined:

conductor = metal4 {
min_width = 0.1
min_spacing = 0.1
thickness = 0.2
table = m4_width_table {
property = WIDTH
table_type = R
dim_type = drawn
value_type = absolute
width = {0.1 0.2 0.25}
spacing = {0.15 0.25 0.5}
value = {0.2 0.3 0.5,
0.2 0.3 0.5,
0.2 0.3 0.5}
}
}

Note the table parameter property is set to WIDTH.

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 MIPT Keyword Dictionary
radius

radius
Parameter for layer(s): TSV
A required TSV layer parameter used to specify the radius of the through silicon via.
Syntax
radius = value
Parameters
• value
A floating point value used to specify the radius of the TSV.
Description
The radius measurement for the TSV is shown in Figure 4-45.

Figure 4-45. radius for TSV Layers

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MIPT Keyword Dictionary
radius

For more information on TSV layer definition, see TSV.

Examples
Example 1
In Figure 4-45, Example 1 is an example of a solid TSV. In this case radius is 9.

radius = 9

Example 2
In Figure 4-45, Example 2 is an example of a hollow TSV. In this case the radius is 9.

radius = 9

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 MIPT Keyword Dictionary
ref_layer

ref_layer
Parameter for layer(s): dielectric
A dielectric layer parameter that specifies the metal or dielectric layer around which the
conformal coating is contoured.
Syntax
ref_layer = reference_layername
Parameters
• reference_layername
A string value used to specify the metal or dielectric layer name.
Description
This is an optional parameter when diel_type is planar; a required parameter when diel_type is
set to conformal, trench, or spacer.

The ref_layer parameter specifies the metal layer or dielectric layer around which the conformal
coating (swthk and topthk) is contoured when diel_type is set to conformal. The reference layer
is a metal layer in the case of a single conformal dielectric. The reference layer is a dielectric
layer for the upper conformal layer in the case of double (and above) conformal dielectrics (see
Figure 4-46).

Figure 4-46. Double Conformal Dielectric ref_layer

The default reference layer is the previous conductor or conformal dielectric layer. Therefore,
the reference layer may be omitted for planar dielectrics if the layers are defined in the correct
order. Specifying the ref_layer allows out-of-order layer definitions. Once the layers have been
placed, the previous layer must be a conformal dielectric or a conductor.

Figure 4-47 shows the reference layer when diel_type is set to trench.

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MIPT Keyword Dictionary
ref_layer

Figure 4-47. Trench Dielectric ref_layer

For more information on dielectric layer definition, see Dielectric.

Examples
ref_layer = poly1

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 MIPT Keyword Dictionary
resistance

resistance
Parameter for layer(s): contact, derived, via
A required layer parameter used by contact, derived, and via layer definitions that specifies the
resistance for the layer in ohms. When specified for derived layers, the derived_type must be
src_drn_contact, ronly_contact, or ronly_via. This parameter generates n1/n2 tables during
calibration. This parameter cannot be used with resistivity or r_sheet parameters in the layer
specification.
Syntax
resistance = value
Parameters
• value
A floating point value used to specify the resistance in units ohms for this specific contact,
via, or derived layer.
Examples
resistance = 0.5

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MIPT Keyword Dictionary
resistivity

resistivity
Parameter for layer(s): required by conductor, derived, device_li, diffusion, ground, li, pcaux,
poly, resistor, substrate, tap, TSV, well; optional for seed, src_drn.
A required parameter for layer definitions conductor, derived, device_li, diffusion, ground, li,
poly, resistor, substrate, tap, TSV, and well that specifies the nominal metal resistance for this
layer. This parameter is optional for pcaux, seed, and src_drn layer definitions.
Syntax
resistivity = resistivity_value
Parameters
• resistivity
A required floating point value used to specify the nominal metal resistance for this layer.
The value can be specified as resistivity (rho). The units for resistivity are ohms *
distance_units.
Description
This parameter specifies the nominal metal resistance for the layer. The value may also be
specified as a table for resistivity (rho). The nominal value you specify for resistivity may be
overridden by specifying the table. This parameter cannot be used if resistance or r_sheet have
been defined for this layer. Specifying both resistivity and r_sheet generates an error during
parsing. When specified in a TSV layer definition, the value specifies the resistivity of the TSV
material.

Examples
resistivity = 0.347269

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 MIPT Keyword Dictionary
resistor

resistor
Type: Resistor layer
Part of the layer definition syntax, the resistor layer definition keyword is used to define the
electrical and physical characteristics of a resistor layer. The resistor keyword is followed by an
equal sign, a unique user-specified layer name, and a list of parameters enclosed in required
braces. Each parameter must appear on its own line. Layers of this type can be specified
multiple times.
Syntax
resistor = layer_name {
thickness = z-direction_metal_ thickness
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistivity = resistivity_value
r_sheet = sheet_resistance
metal_fill = ‘{’fill_ratio fill_spacing fill_width [floating | grounded] ‘}’
thickness_type = absolute | relative
ztop = top_ z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
coplanar_min_spacing = value
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
max_width = maximum_allowed_metal_width
max_spacing = maximum_allowed_metal_spacing
devices = ‘{’device1 device2 ... devicen‘}’ # a space delimited list of device names
layer_bias = bias_actual_width_relative_to_drawn_width
trap_style = top | middle | bottom # where trapezoid measurements are taken from
extra_width = extra-width_of_side_walls # for a conductor with a trapezoid shape
extension = amount_layer_extends_past_diffusion_or_contact_layers
ronly_layers = ‘{’space_delimited_list_of_r-only_layer_names ‘}’
density_window = ‘{’w1h1 factor1‘}’ ... ‘{’wnhn factorn‘}’
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• thickness
A required layer thickness parameter that specifies the thickness of the metal layer in the z-
direction.

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MIPT Keyword Dictionary
resistor

• min_width
A required layer parameter that specifies the minimum allowed drawn width of metal
objects on this layer.
• min_spacing
A required layer parameter that specifies the minimum allowed drawn spacing between
resistors on this layer.
• resistivity
A required layer parameter that specifies the nominal metal resistance for this layer. This
parameter cannot be specified with r_sheet.
• r_sheet
A required layer parameter that specifies the sheet resistance for the layer. This parameter
cannot be specified with resistivity.
• metal_fill
An optional conducting layer parameter. It is a set of values enclosed in braces, used to
define a list of virtual fill parameters.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• measured_from
An optional conducting layer parameter that measures zbottom or ztop relative to the
specified layer.
• coplanar_min_spacing
An optional conducting layer parameter that specifies the minimum spacing value between
coplanar layers.
• tc1
An optional parameter that specifies the resistance temperature1 coefficient.
• tc2
An optional parameter that specifies the resistance temperature2 coefficient.

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 MIPT Keyword Dictionary
resistor

• max_rlength
An optional conducting layer parameter that specifies the maximum length of a wire. This
parameter is used for resistance fracturing, which determines how many pieces a resistor
should be broken into for representation in a distributed network.
• max_width
An optional parameter that specifies the maximum allowed metal width.
• max_spacing
An optional parameter that specifies the maximum allowed metal spacing.
• devices
An optional layer parameter that specifies a space delimited list of device names enclosed in
braces. This parameter is used to specify the devices the layer definition applies to.
• layer_bias
An optional conducting layer parameter that specifies the bias of actual width relative to
drawn width.
• trap_style
An optional conducting layer parameter that defines where trapezoid measurements are
taken from. Permitted values are top, middle, or bottom.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
• extension
An optional conducting layer parameter that specifies the amount this layer extends past
diffusion or contact layers.
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).
• density_window
An optional conducting layer parameter specified as {w1h1factor1} ... {wnhnfactorn}. The
braces are required for grouping.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.

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MIPT Keyword Dictionary
resistor

Examples
resistor = R1_RMOL {
ztop = 0.0
measured_from = poly_diel7
thickness = 0.09
min_width = 0.045
min_spacing = 0.045
resistivity = 0.0366
tc1 = use my_Mx_layers_tc1
tc2 = use my_Mx_layers_tc2
}

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ronly_layers

ronly_layers
Parameter for layer(s): conductor, contact, device_li, diffusion, ground, li, pcaux, poly, resistor,
seed, src_drn, via
An optional parameter for conducting layer definitions conductor, contact, device_li, diffusion,
ground, li, pcaux, poly, resistor, seed, src_drn, and via that specifies a space delimited list of r-
only derived layer names that to define electrical variations for the layer. An r-only layer is a
derived layer with derived_type equal to ronly, ronly_contact, or ronly_via.
Syntax
ronly_layers = ‘{’layer1 layer2 ... layern‘}’
Parameters
• ‘{’layer1 layer2 ... layern‘}’
A space delimited list of r-only layer names enclosed in braces ({ }).
Examples
Example 1
This example specifies a derived ronly layers M1, M2, M3:

ronly_layers = {M1 M2 M3}

Example 2
For conductor and li layers where physical parameters remain the same, but electrical properties
such as resistivity, tc1, tc2, and so forth may vary, you can specify a derived layer with a
derived_type ronly with the varied properties. For example:

li = M1 {
thickness = 0.052
min_width = 0.021
min_spacing = 0.06
resistivity = 0.70
tc1 = 1.5e-03
ronly_layers = {M1_light}
}

derived = M1_light {
derived_type = ronly
resistivity = 0.24
tc1 = 2.6e-03
}

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MIPT Keyword Dictionary
ronly_layers

Example 3
Electrical properties for contact and via layers may be varied using derived layers with a
derived_type ronly_contact or ronly_via respectively. For example:

via = via12 {
measured_from = ndiff
measured_to = M1_norm
min_width = 0.06
min_spacing = 0.06
ronly_layers = {via12_special}
resistance = 14.2
}

derived = via12_special {
derived_type = ronly_via
resistance = 19.7
}

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 MIPT Keyword Dictionary
rsd_enclosure

rsd_enclosure
Parameter for layer(s): diffusion, pcaux, seed, src_drn, multigate
An optional parameter used in diffusion, pcaux, seed, src_drn, multigate layer definitions that
specifies the raised source/drain edge bias for the device.
Syntax
rsd_enclosure = value
Parameters
• value
A floating point value used to specify the raised source/drain edge bias.
Examples
rsd_enclosure = 0.044

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MIPT Keyword Dictionary
rsd_spacing

rsd_spacing
Parameter for layer(s): diffusion, pcaux, seed, src_drn, multigate
An optional parameter used in diffusion, pcaux, seed, src_drn, multigate layer definitions that
specifies the raised source/drain to gate spacing for the device.
Syntax
rsd_spacing = value
Parameters
• value
A floating point value used to specify the raised source/drain to gate spacing.
Examples
rsd_spacing = 0.044

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 MIPT Keyword Dictionary
rsd_thickness

rsd_thickness
Parameter for layer(s): diffusion, pcaux, seed, src_drn, multigate
An optional parameter used in diffusion, pcaux, seed, src_drn, and multigate layer definitions
that specifies the raised source/drain height for the device.
Syntax
rsd_thickness = value
Parameters
• value
A floating point value used to specify the raised source/drain height.
Examples
rsd_thickness = 0.034

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MIPT Keyword Dictionary
r_sheet

r_sheet
Parameter for layer(s): conductor, derived, device_li, diffusion, ground, li, pcaux, poly, resistor,
seed, src_drn
A required parameter for layer definitions conductor, derived, device_li, diffusion, ground, li,
poly, and resistor that specifies the nominal metal resistance for this layer. This parameter is
optional for pcaux, seed, and src_drn layer definitions.
Syntax
r_sheet = sheet_resistance
Parameters
• sheet_resistance
A required floating point value used to specify the nominal metal resistance for this layer.
The units for sheet resistance is ohms.
Description
A parameter that specifies the nominal metal resistance for this layer. The value may also be
specified as a table for sheet resistance (rsh). The nominal value you specify for r_sheet may be
overridden by specifying the table. This parameter cannot be used if resistance or r_sheet have
been defined for this layer. Specifying both resistivity and r_sheet generates an error during
parsing.

Examples
r_sheet = 0.09029

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 MIPT Keyword Dictionary
rsh_type

rsh_type
Type: Global Parameters
An optional global parameter that specifies how to interpret the indices for the sheet resistance
(rsh) process variation table. By default, the indices refer to drawn values; this is the most
common setting. If the parameter is set to actual, it affects the values used in the calculation of
sheet resistance. It can only be specified once.
Syntax
rsh_type = {drawn | actual}
Parameters
• drawn
Specifies that the table should treat indices in the process variation table as drawn values.
This is the default.
• actual
Specifies that the table should treat indices in the process variation table as actual values.
Examples
rsh_type = actual

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MIPT Keyword Dictionary
seed

seed
Type: Seed layer
Part of the layer definition syntax, this optional layer definition keyword is used to define the
area of the poly over the diffusion layer. The seed keyword is followed by an equal sign, a
unique user-specified layer name, and a list of parameters enclosed in required braces. Each
parameter must appear on its own line.
Syntax
seed = layer_name {
thickness = z-direction_metal_ thickness
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistivity = resistivity_value
r_sheet = sheet_resistance
metal_fill = ‘{’ fill_ratio fill_spacing fill_width [floating | grounded] ‘}’
ztop = top_ z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
thickness_type = absolute | relative
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
max_width = maximum_allowed _metal_width
max_spacing = maximum_allowed_metal_spacing
multigate = ignore | trim
devices = ‘{’device1 device2 ... devicen‘}’ # a space delimited list of device names
layer_bias = bias_actual_width_relative_to_drawn_width
trap_style = top | middle | bottom # where trapezoid measurements are taken from
extra_width = extra-width_of_side_walls # for a conductor with a trapezoid shape
extension = amount_layer_extends_past_diffusion_or_contact_layers
ronly_layers = ‘{’space_delimited_list_of_r-only_layer_names‘}’
density_window = ‘{’w1h1 factor1‘}’ ... ‘{’wnhn factorn‘}’
seed_layers = ‘{’space_delimited_list_of_seed_layer_names‘}’
gate_to_cont_min_spacing = minimum_spacing_between_gate/poly_and_diffusion_contact
gate_to_via_min_spacing = minimum_spacing_between_gate/poly_and_diffusion_via
gate_to_LI1_min_spacing = minimum_spacing_between_gate/poly_and_li_layer
gate_to_LI2_min_spacing = minimum_spacing_between_gate/poly_and_second_li_layer
ignore_diff_intrinsic = yes | no
ignore_diff_to_diff_under_poly = yes | no
ignore_endcap = yes | no
ignore_gate_intrinsic = yes | no
ignore_gate_to_diff = yes | no
ignore_gateext_to_diff = yes | no
ignore_gateext_to_diff_only = yes | no

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 MIPT Keyword Dictionary
seed

ignore_rsd = yes | no
ignore_rsd_intrinsic = yes |no
rsd_enclosure = raised_source/drain_edge_bias
rsd_thickness = raised_source/drain_height
rsd_spacing = raised_source/drain_to_gate_spacing
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• thickness
An optional seed layer thickness parameter.
• min_width
An optional seed layer parameter that specifies the minimum allowed drawn width of metal
objects on this layer.
• min_spacing
An optional seed layer parameter that specifies the minimum allowed metal spacing.
• resistivity
An optional seed layer parameter that specifies the nominal metal resistance for this layer.
This parameter cannot be specified with r_sheet.
• r_sheet
An optional seed layer parameter that specifies the sheet resistance for the layer. This
parameter cannot be specified with resistivity.
• metal_fill
An optional conducting layer parameter. It is a set of values enclosed in braces, used to
define a list of virtual fill parameters.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.

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MIPT Keyword Dictionary
seed

• measured_from
An optional conducting layer parameter that measures zbottom or ztop relative to the
specified layer.
• tc1
An optional parameter that specifies the resistance temperature1 coefficient.
• tc2
An optional parameter that specifies the resistance temperature2 coefficient.
• max_rlength
An optional conducting layer parameter that specifies the maximum length allowed for
resistance fracturing.
• max_width
An optional parameter that specifies the maximum allowed metal width.
• max_spacing
An optional parameter that specifies the maximum allowed metal spacing.
• multigate
An optional parameter that specifies which default multigate model for FinFETs should be
used during calibration.
• devices
An optional layer parameter that specifies a space delimited list of device names enclosed in
braces. This parameter is used to specify the devices the layer definition applies to.
• layer_bias
An optional conducting layer parameter that specifies the bias of actual width relative to
drawn width.
• trap_style
An optional conducting layer parameter that defines where trapezoid measurements are
taken from. Permitted values are top, middle, or bottom.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
• extension
An optional conducting layer parameter that specifies the amount this layer extends past
diffusion or contact layers.
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).

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 MIPT Keyword Dictionary
seed

• density_window
An optional conducting layer parameter specified as {w1h1factor1} ... {wn hn factorn}. The
braces are required for grouping.
• seed_layers
An optional layer parameter that specifies one or more gate layers referred to as seed layers,
enclosed in braces ({ }). This parameter can only be specified for a poly or seed layer type.
• gate_to_cont_min_spacing
An optional layer parameter that specifies the minimum spacing between the gate poly layer
and the diffusion contact layer.
• gate_to_via_min_spacing
An optional layer parameter that specifies the minimum spacing between the gate poly layer
and the diffusion via layer.
• gate_to_LI1_min_spacing
An optional layer parameter that specifies the minimum spacing between the gate poly layer
and the li layer touching the diffusion layer.
• gate_to_LI2_min_spacing
An optional layer parameter that specifies the minimum spacing between the gate poly layer
and the second li layer touching the diffusion layer.
• ignore_diff_intrinsic
An optional parameter set to either yes or no, that controls whether or not capacitance from
diffusion to ground is ignored by calibration. The default is yes, if this parameter is not
specified.
• ignore_diff_to_diff_under_poly
An optional parameter set to either yes or no, that controls whether or not diffusion to
diffusion under poly capacitance is ignored by calibration. The default is yes, if this
parameter is not specified.
• ignore_endcap
An optional parameter set to either yes or no, that controls whether or not poly extension to
source and drain coupling is ignored by calibration. The default is no, if this parameter is not
specified.
• ignore_gate_intrinsic
An optional parameter set to either yes or no, that controls whether or not capacitance from
the gate poly layer to ground is ignored by calibration. The default is yes, if this parameter is
not specified.

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MIPT Keyword Dictionary
seed

• ignore_gate_to_diff
An optional parameter set to either yes or no, that controls whether or not the coupling
capacitance between gates to diffusion is ignored by calibration. The default is yes, if this
parameter is not specified.
• ignore_gateext_to_diff
An optional parameter set to either yes or no, that controls whether or not the coupling
capacitance between the gate extension to diffusion and rsd is ignored by calibration. The
default is no, if this parameter is not specified.
• ignore_gateext_to_diff_only
An optional parameter set to either yes or no, that controls whether or not the coupling
capacitance between the gate extension to diffusion is ignored by calibration. The default is
no, if this parameter is not specified.
• ignore_rsd
An optional parameter set to either yes or no, that controls whether or not the poly to raised
source/drain coupling is ignored by calibration. The default is no, if this parameter is not
specified.
• ignore_rsd_intrinsic
An optional parameter set to either yes or no, that controls whether or not the capacitance
between the raised source/drain layer and ground is ignored by calibration. The default is
no, if this parameter is not specified.
• rsd_enclosure
An optional layer parameter that specifies the raised source/drain edge bias.
• rsd_thickness
An optional layer parameter that specifies the raised source/drain height.
• rsd_spacing
An optional layer parameter that specifies the raised source/drain to gate spacing.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Description
The seed layer must be defined with an associated poly layer by specifying the seed_layers
parameter in the poly layer definition. Seed layers use the same parameters as poly layer type,
however all seed layer parameters are optional, not required. The seed layer inherits parameter
settings from its associated poly layer. Any parameters specified in the seed layer definition
override the parameter setting specified in the parent poly layer. For more information on seed
layers, see Seed.

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 MIPT Keyword Dictionary
seed

Examples
Example 1
When the gate of a poly layer has different properties than the interconnect poly, use a seed
layer to specify differences in physical parameters such as thickness. For example:

poly = PO {
thickness = 0.005
min_width = 0.05
min_spacing = 0.075
r_sheet = 7.8
seed_layers = {PO_gate}
}

seed = PO_gate {
thickness = 0.052
r_sheet = 12
}

Example 2
In this example, the poly layer fp_poly has a physical location in the layer stack and specifies
the poly layer over the field profile. The seed layer ppoly also has a physical location in the
layer stack and is used to specify the device region of the poly layer. For example:

poly = fp_poly {
thickness = 0.005
min_width = 0.05
min_spacing = 0.075
resistivity = 3.8
seed_layers = {ppoly}
}

seed = ppoly {
thickness = 0.10
min_width = 0.045
min_spacing = 0.045
resistivity = 0.0366
seed_layers {PMOS1, PMOS2}
}

derived = NMOS1 {
derived_type = seed
table = NMOS1_width_RC {}
}

derived = NMOS2 {
derived_type = seed
table = NMOS2_width_RC {}
}

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MIPT Keyword Dictionary
seed_layers

seed_layers
Parameter for layer(s): poly, seed
An optional parameter used in poly and seed layer definitions that specifies one or more gate
layers also referred to as seed layers. Use seed layers to describe different physical parameters
such as thickness, width, and spacing for a poly layer.
Syntax
seed_layers = ‘{’layer1 layer2 ... layern‘}’
Parameters
• {layer1 layer2 ... layern}
A space delimited list of one or more seed layer names enclosed in braces ({ }).
Examples
Example 1
You are allowed to specify more than one seed layer for a poly layer. For example:

poly = mpoly {
...
seed_layers = {ngate pgate}
...
}

Example 2
When the gate of a poly layer has different properties than the interconnect poly, use a seed
layer to specify differences in physical parameters such as resistivity. For example:

poly = mypoly {
thickness = 0.055
min_width = 0.05
min_spacing = 0.075
resistivity = 4.8
seed_layers = {gate_poly}
}

seed = gate_poly {
thickness = 0.09
resistivity = 12
}

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 MIPT Keyword Dictionary
spacings

spacings
Parameter for layer(s): conductor, poly, diffusion, li
An optional conducting layer parameter that specifies a list of spacing values used to override
modeled spacings for the layer. These floating point values must be enclosed in braces ({ }).
Syntax
spacings = ‘{’ s1 s2 s3 ... sn ‘}’
Parameters
• ‘{’ s1 s2 s3 ... sn ‘}’
A space delimited list of one or more floating point spacing values enclosed in braces ({ }).
Examples
conductor = M1 {
thickness = 0.063
hidden = {thickness}
min_width = 0.034
min_spacing = 0.02
tc1 = 1.565e-03
tc2 = -3.159e-07
extra_width = 0.012
swstep = 3
widths = {0.029 0.0483 0.067667 0.145 }
spacings = {0.009 0.0149698 0.0248995 0.041415 0.068887 0.114581
0.190584 0.317001 0.52727 1.74}
}

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MIPT Keyword Dictionary
src_drn

src_drn
Type: Src_drn layer
Part of the layer definition syntax, this optional layer definition keyword is used to define the
diffusion layer area used to form a gate. The src_drn keyword is followed by an equal sign, a
unique user-specified layer name, and a list of parameters enclosed in required braces. Each
parameter must appear on its own line.
Syntax
src_drn = layer_name {
thickness = z-direction_metal_ thickness
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistivity = resistivity_value
r_sheet = sheet_resistance
metal_fill = ‘{’fill_ratio fill_spacing fill_width [floating | grounded] ‘}’
ztop = top_ z-coordinate
zbottom = bottom_z-coordinate
measured_from = layername
thickness_type = absolute | relative
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
max_rlength = length_for_resistance_fracturing
max_width = maximum_allowed _metal_width
max_spacing = maximum_allowed_metal_spacing
devices = ‘{’device1 device2 ... devicen‘}’ # a space delimited list of device names
layer_bias = bias_actual_width_relative_to_drawn_width
trap_style = top | middle | bottom # where trapezoid measurements are taken from
extra_width = extra-width_of_side_walls # for a conductor with a trapezoid shape
extension = amount_layer_extends_past_diffusion_or_contact_layers
ronly_layers = ‘{’space_delimited_list_of_r-only_layer_names‘}’
density_window = ‘{’w1h1 factor1‘}’ ... ‘{’wnhn factorn‘}’
src_drn_layers = ‘{’space_delimited_list_of_src_drn_layer_names‘}’
rsd_enclosure = raised_source/drain_edge_bias_value
rsd_thickness = raised_source/drain_height_value
rsd_spacing = raised_source/drain_to_gate_spacing_value
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.

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 MIPT Keyword Dictionary
src_drn

• thickness
An optional layer thickness parameter that specifies the thickness of the src_drn layer.
• min_width
An optional layer parameter that specifies the minimum allowed drawn width of metal
objects on this layer.
• min_spacing
An optional parameter that specifies the minimum allowed metal spacing.
• resistivity
An optional layer parameter that specifies the nominal metal resistance for this layer. This
parameter cannot be specified with r_sheet.
• r_sheet
An optional layer parameter that specifies the sheet resistance for the layer. This parameter
cannot be specified with resistivity.
• metal_fill
An optional conducting layer parameter. It is a set of values enclosed in braces, used to
define a list of virtual fill parameters.
• ztop
The top z-coordinate that is typically zero. This parameter is optional if zbottom is
specified; otherwise, this parameter is required.
• zbottom
The bottom z-coordinate that is typically a negative value. This parameter is optional if ztop
is specified; otherwise, this parameter is required.
• measured_from
An optional conducting layer parameter that measures zbottom or ztop relative to the
specified layer.
• thickness_type
An optional parameter set to either relative or absolute that defines how thickness is
measured. This parameter is permitted only if measured_from is set. The default is absolute,
if this parameter is not specified.
• tc1
An optional parameter that specifies the resistance temperature1 coefficient.
• tc2
An optional parameter that specifies the resistance temperature2 coefficient.

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MIPT Keyword Dictionary
src_drn

• max_rlength
An optional conducting layer parameter that specifies the maximum length allowed for
resistance fracturing.
• max_width
An optional parameter that specifies the maximum allowed metal width.
• max_spacing
An optional parameter that specifies the maximum allowed metal spacing.
• devices
An optional layer parameter that specifies a space delimited list of device names enclosed in
braces. This parameter is used to specify the devices the layer definition applies to.
• layer_bias
An optional conducting layer parameter that specifies the bias of actual width relative to
drawn width.
• trap_style
An optional conducting layer parameter that defines where trapezoid measurements are
taken from. Permitted values are top, middle, or bottom.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.
• extension
An optional conducting layer parameter that specifies the amount this layer extends past
diffusion or contact layers.
• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).
• density_window
An optional conducting layer parameter specified as {w1h1factor1} ... {wn hn factorn}. The
braces are required for grouping.
• src_drn_layers
Optional conducting layer parameter that specifies a space delimited list of src_drn layer
names enclosed in braces ({ }).
• rsd_enclosure
Optional conducting layer parameter that specifies the raised source/drain edge bias.
• rsd_thickness
Optional conducting layer parameter that specifies the raised source/drain height.

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 MIPT Keyword Dictionary
src_drn

• rsd_spacing
Optional conducting layer parameter that specifies the raised source/drain to gate spacing.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Description
The src_drn layer type represents a physical location in the layer stack. A src_drn layer must be
defined with an associated diffusion layer by specifying the src_drn_layers parameter in the
diffusion layer definition. Src_drn uses the same parameters as diffusion layer type, except all
src_drn parameters are optional, not required. The src_drn layer inherits parameter settings from
its associated diffusion layer. Any parameters specified in the src_drn layer definition override
the parameter setting specified in the parent diffusion layer. For more information on src_drn,
see Src_drn.

Examples
src_drn = diff1 {
thickness = 0.09
min_width = 0.045
min_spacing = 0.045
resistivity = 0.0366
src_drn_layers = {tndiff tpdiff}
}

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MIPT Keyword Dictionary
src_drn_contact_layers

src_drn_contact_layers
Parameter for layer(s): contact
An optional parameter used in contact layer definitions that specifies the layer or layers that
make up the source/drain contact region of devices. Layer names must be enclosed in braces
({ }).
Syntax
src_drn_contact_layers = {layer1 layer2 ... layern}
Parameters
• {layer1 layer2 ... layern}
A space delimited list of src_drn contact layer names enclosed in braces ({ }).
Examples
src_drn_contact_layers = {ndiff2 pdiff2}

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 MIPT Keyword Dictionary
src_drn_layers

src_drn_layers
Parameter for layer(s): diffusion, src_drn
An optional parameter used in diffusion and src_drn layer definitions that specifies a space
delimited list of one or more src_drn layer names.
Syntax
src_drn_layers = {layer1 layer2 ... layern}
Parameters
• {layer1 layer2 ... layern}
A space delimited list of src_drn layer names enclosed in braces ({ }).
Description
Use this parameter to associated a diffusion layer to src_drn layers that specify variations in
diffusion thickness, spacing, and width. The src_drn layers describe the different physical
parameters such as thickness, width, and spacing for a diffusion layer.

Examples
Example 1
You are allowed to specify more than one src_drn layer for a diffusion layer. For example:

diffusion = my_diff {
...
src_drn_layers = {ndiff pdiff}
...
}

Example 2
When there are differences in diffusion thickness, spacing, or width, use a src_drn layer to
specify the differences in physical parameters. The src_drn layers that specify these differences
are defined in the diffusion layer with the src_drn_layers parameter. For example:

diffusion = diff1 {
thickness = 0.09
min_width = 0.045
min_spacing = 0.045
resistivity = 0.0366
src_drn_layers = {pdiff ndiff}
}

src_drn = pdiff {
thickness = 0.3
r_sheet = 0.2
}

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MIPT Keyword Dictionary
src_drn_layers

src_drn = ndiff {
thickness = 0.32
r_sheet = 0.17
}

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 MIPT Keyword Dictionary
substrate

substrate
Type: Substrate layer
Part of the layer definition syntax, this optional layer definition keyword is used to define the
substrate layer. The substrate keyword is followed by an equal sign, a unique user-specified
layer name, and a list of parameters enclosed in required braces. Each parameter must appear on
its own line.
Syntax
substrate = layer_name {
ztop = top_z-coordinate
zbottom = bottom_z-coordinate
thickness = z-direction_metal_thickness
resistivity = resistivity_value
eps = value
bulk_min_width = value
bulk_resistance = value
hidden = false | true
}
Parameters
• ztop
A required top z-coordinate of the substrate layer.
• zbottom
A required bottom z-coordinate of the substrate layer.
• thickness
A required layer parameter that specifies the thickness of the substrate layer.
• resistivity
A required parameter that specifies the substrate layer resistance as rho, typically greater
than or equal to 0.
• eps
A required value that specifies the relative permittivity (dielectric constant), typically
greater than or equal to 0.
• bulk_min_width
An optional layer parameter that specifies the minimum width of the bulk layer in microns.
• bulk_resistance
An optional layer parameter that specifies the sheet resistance of the bulk layer in ohms.

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MIPT Keyword Dictionary
substrate

• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Description
The substrate layer type can be specified once in the MIPT file. The ztop and zbottom
parameters are required to establish the substrate. Substrate models need information about
substrate layers. Substrate layers require resistivity, eps, and thickness. They cannot contain
tables. They should not be coplanar with each other or have gaps. For more information on
substrate layer structures, see Substrate Layer Structures.

Examples
base = base_layer {
ztop = 0 # required to define the base plane
# all other z-dimensions refer to this
thickness = 1
}

substrate = substrate_layer {
ztop = -0.18
zbottom = -0.08
resistivity = 0.11
eps = 2.3
}

dielectric = STI {
zbottom = 0 # optional
diel_type = planar
thickness = 0.27 # hSTI
eps = 4
}

308 xCalibrate™ Batch User's Manual, v2016.2

 MIPT Keyword Dictionary
svrf_verbatim

svrf_verbatim
Type: Global Parameters
An optional global parameter that specifies a text string or text block that allows the insertion of
SVRF statements into the calibrated rule file.
Syntax
svrf_verbatim = text
Parameters
• text
A value that specifies a text string or text block that allows the insertion of SVRF statements
into the calibrated rule file. If the string contains spaces, then it must be enclosed in quotes
(“ ”).
Description
This parameter should be used with caution as some SVRF statements cannot be declared
multiple times when parsed by the SVRF parser. There is no checking for compliance with
SVRF.

This parameter can be specified multiple times. The text specified by this parameter is written
verbatim toward the top of the un-encrypted portion of the calibrated rule deck. It does not
affect calibration. You can use this parameter with no value to create an empty line in the header
of the calibrated rule file. If the string is enclosed in quotes, spaces are allowed. Multiple lines
must be enclosed in braces ({ }). You can encrypt one or more of the lines enclosed in braces by
using the #ENCRYPT and #DECRYPT directives.

For more information on global parameters, see Global Parameters. For more information on
the encryption directives, see Encryption. For information on SVRF statements, see the
Standard Verification Rule Format (SVRF) Manual.

Examples
Example 1
svrf_verbatim =
svrf_verbatim = "CAPACITANCE ORDER poly m1 m2"
svrf_verbatim = {
CAPACITANCE ORDER poly m1 m2
N4_PEX = M4 NOT GATE
}

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MIPT Keyword Dictionary
svrf_verbatim

Example 2
Given the following layer information:

Table 4-1. Layer Information

Layer Name Sheet Resistance
psub 109.1
nwell 402.3
pwell 347.5
nplus 633.1
pplus 352.9

To enter the sheet resistance of each bulk layer in your MIPT file, use the svrf_verbatim
keyword as follows:

svrf_verbatim = ”PEX RESISTANCE PARAMETERS psub BULKRESISTANCE 109.1”

svrf_verbatim = ”PEX RESISTANCE PARAMETERS nwell BULKRESISTANCE 402.3”
svrf_verbatim = ”PEX RESISTANCE PARAMETERS pwell BULKRESISTANCE 347.5”
svrf_verbatim = ”PEX RESISTANCE PARAMETERS nplus BULKRESISTANCE 633.1”
svrf_verbatim = ”PEX RESISTANCE PARAMETERS pplus BULKRESISTANCE 352.9”

Example 3
To encrypt certain SVRF statements in the calibrated rule files use the #ENCRYPT and
#DECRYPT directives:

svrf_verbatim = {
PEX REDUCE ANALOG YES
#ENCRYPT
CAPACITANCE ORDER poly m1 m2
N4_PEX = M4 NOT GATE
#DECRYPT
}

This example produces a rules.C file that has the following in the header section:

...
PEX REDUCE ANALOG YES
#DECRYPT%9"~6B$JA"P&@I1804%J<'_.H"#O9I&)M\:JU\<K4Y\L%?1!#WIG$!:S7W6A%2T)>
[;?UCA!"@3^UE:P%1QMT4:*!H;J;1Q!!"[X<'@?U.`WA<L7,O4"R02A!!"R*E"CSA\+0^Y:"R
O@VLX4!!!"E^W["MS@>7R,=2Q$9L>X5@N3\/
>>%CEC7)4!AXFL:Q!#,L#I!]@%B%5E2.(%Q,^$DQ!!")9OAR4C?L!@9&WA#J']E[1!!"8>KM$
5`!DR6L!&$_X65H#Q!!"\':3I,$\D]_J"]S#"N!!%!!!"
#ENCRYPT
...

310 xCalibrate™ Batch User's Manual, v2016.2

 MIPT Keyword Dictionary
swslope

swslope
Parameter for layer(s): dielectric
An optional conformal or trench dielectric layer parameter used to specify the angle of the side
wall in degrees.
Syntax
swslope = value
Parameters
• value
An integer valued used to specify the angle of the side wall in degrees. It should be a
positive value less than 180. The default is 90 degrees.
Description
The angle of the side wall, swslope, is shown in Figure 4-48. If this parameter has not been
specified the parser issues an informational message that notifies you that the parameter was not
found and the default of 90 degrees is used. The xCalibrate tool also verifies that the actual
slope angle entered intersects the top plane for this material thickness. This parameter may only
be used when the diel_type parameter is set to conformal or trench.

Figure 4-48. Sidewall Slope

For more information on dielectric layer definition, see Dielectric.

Examples
swslope = 90

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MIPT Keyword Dictionary
swthk

swthk
Parameter for layer(s): dielectric
An optional dielectric layer parameter used to specify the conformal coating thickness on the
side wall.
Syntax
swthk = value
Parameters
• value
A floating point value used to specify the conformal coating thickness on the side wall.
Description
This swthk parameter is required when diel_type parameter is set to conformal, trench, or
spacer. The value specifies the conformal coating thickness on the side wall as shown in
Figure 4-49.

Figure 4-49. swthk

For more information on dielectric layer definition, see Dielectric.

Examples
swthk = 0.075

312 xCalibrate™ Batch User's Manual, v2016.2

 MIPT Keyword Dictionary
table

table
Type: Table Syntax
An optional structure definition keyword used to provide a unified way to input process
variation information to xCalibrate.
Syntax
Syntax 1, one-dimensional table
table = <table_reference_name> {
property = <table_property>
table_type = {R | C | RC}
dim_type = {drawn | actual}
value_type = {absolute | delta}
{{equation = {<equation to evaluate, optional>}} |
{variable1 = {w1 w2 ... wn}
value = {v(w1) v(w2) ... v(wn) }}
}
}

Syntax 2, two-dimensional table

table = <table_reference_name> {
property = <table_property>
table_type = {R | C | RC}
dim_type = {drawn | actual}
value_type = {absolute | delta}
bias_type = {preferred | nonpreferred}
{{equation = {<equation to evaluate, optional>}} |
{<variable>1 = {w1 w2 ... wn}
<variable>2 = {s1 s2 ... sn}
value = {v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}
}

Parameters
• table_reference_name
A required unique user-specified name.
• property
A required parameter that specifies the table property being described. Each table property
has a specific set of ordered variables associated with it.
Valid table property types include: WIDTH, MULTI_BIAS, THICKNESS_TOP,
THICKNESS_BOT, THICKNESS, GATE_FRINGE, RSH, RSH_T, RHO, RHO_T,
RESISTANCE, TC1, TC2, CONTACT_WIDTH, VWIDTH, VLENGTH, and
VRESISTANCE.
“Table Property” on page 92 shows which options are available for each table property. It
also identifies which properties depict drawn or actual dimensions, or both, and what value
type setting should be used.

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MIPT Keyword Dictionary
table

• table_type
A required parameter that must be either R, C, or RC. Note that not every keyword is
supported with every table type.
• dim_type
A required parameter that must be either drawn or actual. This parameter is used to specify
if table property is in drawn or actual dimensions. Note that not every keyword is supported
with every dimension type.
• value_type
A required parameter that must be either absolute or delta. Note that not every keyword is
supported with every value type.
• bias_type
An optional parameter used to specify whether the actual width values described in the table
are for the preferred or non-preferred direction. This parameter may only be used in two-
dimensional width or multi_bias property tables.
• equation
An optional parameter whose value specifies an equation to evaluate. This parameter cannot
be used with variable and value parameters.
• variabl e 1
A parameter that specifies variables that are affected by this table definition. Permitted
values for variable include width, length, thickness, spacing, density, co_co_spacing, and
gate_co_spacing. “Variable Keywords” on page 107 lists the available variable keywords
and their unit value. This parameter cannot be used with the equation parameter.
• value
An optional parameter whose value specifies the replacement values for the specified
variable. This parameter cannot be used with the equation parameter.
Description
A table is typically specified in-line with a layer definition in the MIPT file, but can also be
referenced using the use keyword. For more information on use keyword, see Use Directive.

Examples
table = my_table {
property = width
table_type = RC
dim_type = drawn
value_type = delta
width = { 5 6 7 8 }
value = { 0.12 0.13 0.14 0.15}
}

314 xCalibrate™ Batch User's Manual, v2016.2

 MIPT Keyword Dictionary
table_type

table_type
table structure parameter
A required table structure parameter used to specify how the table affects capacitance and
resistance extraction calculations for the layer.
Syntax
table_type = {R | C | RC}
Parameters
• R
Specifies that the table should be applied to resistance only.
• C
Specifies that the table should be applied to capacitance only.
• RC
Specifies that the table should be applied to both resistance and capacitance.
Description
A parameter that specifies how the table affects capacitance and resistance extraction
calculations for the layer. Permitted values are R, C, or RC. Note that not every table_type is
supported by every table property. Table 3-48 describes which table_type settings are allowed
for each table property. For more information on tables, see Table Syntax.

Examples
table_type = RC

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MIPT Keyword Dictionary
tap

tap
Type: Tap layer
Part of the layer definition syntax, this optional layer definition keyword is used to define a tap
layer. The tap keyword is followed by an equal sign, a unique user-specified layer name, and a
list of parameters enclosed in required braces. Each parameter must appear on its own line. This
layer type can be specified more than once in the MIPT file.
Syntax
tap = layer_name {
ztop = top_z-coordinate
zbottom = bottom_z-coordinate
thickness = z-direction_metal_thickness
resistivity = resistivity_value
bulk_min_width = value
bulk_resistance = value
hidden = false | true
}
Parameters
• ztop
A required top z-coordinate of the tap layer.
• zbottom
A required bottom z-coordinate of the tap layer.
• thickness
A required layer parameter that specifies the thickness of the tap layer.
• resistivity
A required parameter that specifies the tap layer resistance as rho, typically greater than or
equal to 0.
• bulk_min_width
An optional layer parameter that specifies the minimum width of the bulk layer in microns.
• bulk_resistance
An optional layer parameter that specifies the sheet resistance of the bulk layer in ohms.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.

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 MIPT Keyword Dictionary
tap

Description
A tap layer is used to connect power and ground nets to the substrate. The vertical and lateral
resistance needs to be modeled for the substrate extraction model. Tap layers require the
parameters for resistivity and thickness. Tap layers have placement information defined relative
to the top of the substrate. This information is not used for capacitance calculations in Calibre
xRC or Calibre xACT 3D. The ztop and zbottom parameters are required to establish the tap
layer. For more information on tap layers, see Substrate Layer Structures.

Examples
tap = ntap {
zbottom = -0.01
ztop = 100
thickness = 0.1
resistivity = 11
}

substrate = substrate_layer {
ztop = -0.18
thickness = 0.1
resistivity = 0.11
eps = 2.3
}

dielectric = STI {
zbottom = 0
diel_type = planar
thickness = 0.27 # hSTI
eps = 4
}

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MIPT Keyword Dictionary
tc1

tc1
Parameter for layer(s): conductor, contact, derived, device_li, diffusion, ground, li, pcaux, poly,
resistor, seed, src_drn, TSV, via
An optional parameter for layer definitions conductor, contact, derived, device_li, diffusion,
ground, li, pcaux, poly, resistor, seed, src_drn, TSV, and via that specifies the first order
temperature coefficient (TC1) for resistance for the layer.
Syntax
tc1 = value
Parameters
• value
A value that specifies the first order temperature coefficient (TC1) for resistance.
Description
Specifies the first order temperature coefficient (TC1) for resistance for the layer. When
specified in a TSV layer definition, the value specifies the first order temperature coefficient of
the TSV material.

The value may also be specified as a table for TC1. The nominal value you specify for tc1 may
be overridden by specifying the table. For more information on tables, see Table Syntax.

Examples
tc1 = 0.00231

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 MIPT Keyword Dictionary
tc2

tc2
Parameter for layer(s): conductor, contact, derived, device_li, diffusion, ground, li, pcaux, poly,
resistor, seed, src_drn, TSV, via
An optional parameter for layer definitions conductor, contact, derived, device_li, diffusion,
ground, li, pcaux, poly, resistor, seed, src_drn, TSV, and via that specifies the second order
temperature coefficient (TC2) for resistance for the layer.
Syntax
tc2 = value
Parameters
• value
A value that specifies the second order temperature coefficient (TC2) for resistance.
Description
Specifies the second order temperature coefficient (TC2) for resistance for the layer. When
specified in a TSV layer definition, the value specifies the second order temperature coefficient
of the TSV material.

The value may also be specified as a table for TC2. The nominal value you specify for tc2 may
be overridden by specifying the table. For more information on tables, see Table Syntax.

Examples
tc2 = -5.048e-07

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MIPT Keyword Dictionary
temperature

temperature
Type: Global Parameters
An optional global parameter that specifies the nominal temperature for the calibration in units
Celsius. The default is 25 C if you do not include this parameter in your MIPT file. It can only
be specified once.
Syntax
temperature = value
Parameters
• value
A value that represents the nominal temperature for the calibration in units Celsius.
Examples
temperature = 28

320 xCalibrate™ Batch User's Manual, v2016.2

 MIPT Keyword Dictionary
thickness

thickness
Parameter for layer(s): base, conductor, contact, device_li, dielectric, diffusion, ground, li,
pcaux, poly, resistor, seed, substrate, src_drn, tap, well
A required parameter for layer definitions base, conductor, contact, device_li, dielectric,
diffusion, ground, li, pcaux, poly, resistor, substrate, tap, and well that specifies the nominal
metal resistance for this layer. This parameter is optional for seed and src_drn layer definitions.
Syntax
thickness = value
Parameters
• value
A required positive integer or floating point value that specifies the thickness of the layer
being defined.
Description
The thickness parameter represents different thickness measurements depending on the layer
type.

base — the thickness of the base layer.

dielectric — the thickness of the dielectric layer in the z-direction. The thickness may be a zero
value if the layer is diel_type = conformal. For a trench dielectric (diel_type = trench) the
thickness must always be 0.

conductor, poly, diffusion, li — the z-direction metal thickness.

substrate, well, tap — for substrate layer types it is the thickness of the substrate. Thickness is
required to establish a substrate layer. The thickness parameter can only be specified with
zbottom parameter; It cannot be specified with both ztop and zbottom.

salicide — salicide thickness, deep_sd thickness.

For more information on layer definition types, see Layer Definitions.

Examples
thickness = 0

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MIPT Keyword Dictionary
thickness_type

thickness_type
Parameter for layer(s): conductor, device_li, dielectric, diffusion, ground, li, pcaux, poly,
resistor, seed, src_drn
An optional parameter for layer definitions conductor, device_li, dielectric, diffusion, ground,
li, pcaux, poly, resistor, seed, and src_drn, only valid and used together with the measured_from
parameter, that specifies how thickness is measured. This keyword is only valid if the
measured_from parameter is specified for the layer.
Syntax
thickness_type = absolute | relative
Parameters
• absolute
Specifies that the method of thickness measurement is absolute when ztop or zbottom is
defined. The default is absolute if this parameter is not specified.
• relative
Specifies that the method of thickness measurement is relative to the layer. Use this setting
when the measured_from parameter is specified, and ztop or zbottom parameters are not
defined for the layer. Use this setting to override the behavior of the thickness parameter.
Examples
thickness_type = relative

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 MIPT Keyword Dictionary
top_enclosure

top_enclosure
Parameter for layer(s): TSV
An optional TSV layer parameter used to specify the top enclosure covered by the metal
“to_layer” for the through silicon via.
Syntax
top_enclosure = value
Parameters
• value
A floating point value that specifies the top enclosure covered by the metal “to_layer”.
Description
An optional TSV parameter that specifies the top enclosure covered by the metal “to_layer” for
the through silicon via. This parameter is used only in TSV layer definitions. The top_enclosure
is shown in Figure 4-50.

Figure 4-50. top_enclosure of TSV Layer

For more information on the TSV layer definition, see TSV.

Examples
top_enclosure = 0.044

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MIPT Keyword Dictionary
topthk

topthk
Parameter for layer(s): dielectric
An optional dielectric layer parameter that specifies the conformal coating thickness on top of a
conductor.
Syntax
topthk = value
Parameters
• value
A floating point value used to specify the conformal coating thickness on top of a conductor.
Description
This dielectric parameter is required when diel_type is set to conformal, trench, or spacer. The
value specifies the conformal coating thickness on top of a conductor. The topthk value may be
a positive or negative value as shown in Figure 4-51, Figure 4-52, and Figure 4-53.

Figure 4-51. Trench Dielectric with Positive topthk

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 MIPT Keyword Dictionary
topthk

Figure 4-52. Trench Dielectric with Negative topthk

Figure 4-53. Conformal Dielectric with Negative topthk

For more information on dielectric layer definition, see Dielectric.

Examples
topthk = 0.02

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MIPT Keyword Dictionary
trap_style

trap_style
Parameter for layer(s): conductor, device_li, diffusion, ground, li, pcaux, poly, resistor, seed,
src_drn
An optional parameter for layer definitions conductor, device_li, diffusion, ground, li, pcaux,
poly, resistor, seed, and src_drn, that specifies where the drawn or actual width is measured
from. This parameter must be specified with the layer_bias parameter for the conductor layer.
The drawn or actual width is measured in the middle of the trapezoid by averaging the top and
bottom edges of the trapezoid.
Syntax
trap_style = bottom | middle | top
Parameters
• bottom
Specifies that the drawn or actual width is measured from the bottom edge of the trapezoid.
• middle
Specifies that the drawn or actual width is measured from the middle of the trapezoid by
averaging the top and bottom edges of the trapezoid. This is the default.
• top
Specifies that the drawn or actual width is measured from the top edge of the trapezoid.
Examples
trap_style = middle

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 MIPT Keyword Dictionary
trench_contact_extension_length

trench_contact_extension_length
Parameter for layer(s): multigate
An optional multigate layer parameter used to specify the nominal extension of the trench
contact beyond the diffusion. This parameter is used mainly for narrow devices.
Syntax
trench_contact_extension_length = value
Parameters
• value
A floating point value that specifies the nominal extension of the trench contact beyond the
diffusion.
Examples
trench_contact_extension_length = 8.0

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MIPT Keyword Dictionary
trim

trim
Parameter for layer(s): via
An optional layer parameter that controls how resistance is calculated for the via.
Syntax
trim = no | yes | actual | merge
Parameters
• no
Specifies to use drawn via dimensions when calculating via resistance. This is the default.
• yes
Specifies to use trimmed via dimensions when calculating via resistance.
• actual
Specifies to use actual via dimensions when calculating via resistance.
• merge
Specifies to use the merged area of the via when calculating via resistance. Use this setting
for coplanar vias.
Examples
trim = yes

328 xCalibrate™ Batch User's Manual, v2016.2

 MIPT Keyword Dictionary
TSV

TSV
Type: TSV layer
Part of the layer definition syntax, this optional layer definition keyword is used to define the
electric and physical characteristics of a through silicon via (tsv). The tsv keyword is followed
by an equal sign, a unique user-specified layer name, and a list of parameters enclosed in
required braces. Each parameter must appear on its own line. Layers of this type can be
specified multiple times in the MIPT file.
Syntax
tsv = layer_name {
measured_from = layername # bottom most layer (back side)
measured_to = layername # top most layer (front side)
radius = radius_of_the_TSV
hollow_radius = radius_of_the_hollow_area
height = height_of_the_TSV
resistivity = resistivity_value_of_the_TSV_material
depletion_width = depletion_region_width
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
top_enclosure = top_enclosure_value # covered by the metal “to_layer”
bot_enclosure = bottom_enclosure_value # covered by the metal “from_layer”
extra_width = extra-width_of_side_walls # for tapered style TSV
insulator = {{thickness1, ER1} {thickness2 , ER2 }... {thicknessn ERn}}
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• measured_from
A required layer parameter that specifies the back side metal layer that the TSV connects to.
• measured_to
A required layer parameter that specifies the front side metal layer that the TSV connects to.
• radius
A required layer parameter that specifies the radius of the TSV.
• hollow_radius
A required layer parameter that specifies the radius of the hollow area of the TSV.
• height
A required layer parameter that specifies the height of the TSV.

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MIPT Keyword Dictionary
TSV

• resistivity
A required layer parameter that specifies the resistivity of the TSV material.
• depletion_width
A required layer parameter that specifies the depletion region width for the TSV.
• tc1
An optional parameter that specifies the resistance temperature1 coefficient.
• tc2
An optional parameter that specifies the resistance temperature2 coefficient.
• top_enclosure
An optional parameter that specifies the top enclosure covered by the metal “to_layer” for
the TSV.
• bot_enclosure
An optional parameter that specifies the bottom enclosure covered by the metal
“from_layer” for the TSV.
• extra_width
An optional layer parameter that specifies the extra-width of side walls for a tapered TSV.
• insulator
An optional layer parameter that specifies one or more insulators for the TSVs in the
process. Each insulator is described by a thickness and dielectric constant value.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Examples
tsv = myTSV {
measured_from = bmet1
measured_to = met1
radius = 1.89
hollow_radius = 0.87
height = 10.3
top_enclosure = 1.3
bot_enclosure = 0.6
depletion_width = 0.5
resistivity = 8.3
}

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 MIPT Keyword Dictionary
tsv_model

tsv_model
Type: Global Parameters
An optional global parameter that specifies whether the TSV radius is retrieved from the rules
(device) or the layout (layout) during calibration. It can only be specified once.
Syntax
tsv_model = device | layout
Parameters
• device
Specifies the TSV radius is retrieved from the device. This is the default.
• layout
Specifies the TSV radius is retrieved from the layout.
Examples
If your TSV model is layout:

tsv_model = layout
tsv_radius_type = hole

tsv = myTSV {
measured_from = bmet1
measured_to = met1
radius = 1.89
hollow_radius = 0.87
hollow_diel = 1.4
height = 40
top_enclosure = 1.3
bot_enclosure = 0.6
depletion_width = 0.5
resistivity = 0.02
}

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MIPT Keyword Dictionary
tsv_radius_type

tsv_radius_type
Type: Global Parameters
An optional global parameter that specifies whether to treat the radius of the TSV as metal lined
or just a hole. It can only be specified once.
Syntax
tsv_radius_type = metal | hole
Parameters
• metal
Specifies that the radius of the TSV represents the radius of the metal in the TSV. This is the
default.
• hole
Specifies that the radius of the TSV represents the radius of the TSV as a hole in the
substrate (metal and insulator).
Description
Specifies whether to treat the radius of the TSV as metal lined or just a hole.

In Figure 4-54, R2 is the radius of the hole and R1 is the radius of the TSV when it is metal
lined. The difference between R2 and R1 is the dielectric sidewall thickness.

Figure 4-54. TSV Radius

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 MIPT Keyword Dictionary
tsv_radius_type

Examples
If your TSV is a hole:

tsv_model = layout
tsv_radius_type = hole
tsv = myTSV {
measured_from = bmet1
measured_to = met1
radius = 1.89
hollow_radius = 0.87
hollow_diel = 1.4
height = 40
top_enclosure = 1.3
depletion_width = 0.5
resistivity = 0.1
}

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MIPT Keyword Dictionary
ubump

ubump
Type: uBump layer
Part of the layer definition syntax, this optional layer definition keyword is used to define the
electric and physical characteristics of a ubump. The ubump keyword is followed by an equal
sign, a unique user-specified layer name, and a list of parameters enclosed in required braces.
Each parameter must appear on its own line. Layers of this type can be specified multiple times
in the MIPT file.
Syntax
ubump = layer_name {
measured_from = layername # bottom most layer
measured_to = layername # top most layer
min_width = minimum_allowed_metal_width
mid_width = middle_width_of_the_ubump
enclosure_down = enclosure_with_respect_to_lower_conductor
enclosure_up = enclosure_with_respect_to_upper_conductor
resistivity = resistivity_value_of_the_ubump_material
hidden = false | true
}
Parameters
• layer_name
A required unique user-specified name.
• measured_from
A required layer parameter that specifies the bottom most layer that the uBump connects to.
• measured_to
A required layer parameter that specifies the top most layer that the uBump connects to.
• min_width
A required parameter that specifies the minimum allowed metal width of the ubump.
• mid_width
A required parameter that specifies the middle metal width of the ubump.
• enclosure_down
A required parameter that specifies enclosure with respect to a lower conductor. For ubump
the value of enclosure_down is the same as the value specified for enclosure_up.
• enclosure_up
A required parameter that specifies enclosure with respect to an upper conductor. For
ubump the value of enclosure_up is the same as the value specified for enclosure_down.

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ubump

• resistivity
A required layer parameter that specifies the resistivity of the ubump material.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Examples
ubump = my_bump {
measured_from = WI
measured_to = BMB
min_width = 1.5
mid_width = 2.0
enclosure_up = 1.8
enclosure_down = 1.8
resistivity = 0.02
}

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value

value
table structure parameter
A required table structure parameter used to specify a space delimited set of values enclosed in
braces that represent value variations for the property.
Syntax
value = ‘{’v(w1) v(w2) ... v(wn) ‘}’
Parameters
• {v(w1) v (w2) ... v (wn) }
A set of space delimited floating point values enclosed in braces ({ }), used to specify the
variation values applied to associated variable in the table definition.
Description
This required parameter is the last entry of each table. The table entries for value are the
absolute or delta values applied to the variation property. The end of line character of each line
in the value array must be a comma “,”. The adjusted data in the value arrays must conform to
the corresponding minimum values defined in the MIPT file. The adjusted widths must not be
smaller than the minimum width for the layer. The adjusted spacing must not be smaller than
the minimum spacing for the layer. If a bias has been set in the MIPT file, an error message is
generated if a table has settings that are out of range according to that bias.

The number of values that appear depends on the number of variables specified for the table. A
table with only one variable is a single dimensional table. A table that specifies 2 variables is
called a two dimensional table. The value list for a two dimensional list looks like:

table = table_reference_name {
property = table_property
table_type = {R | C | RC}
dim_type = {drawn | actual}
value_type = {absolute | delta}
equation = {<equation to evaluate, optional>}
variable1 = {w1 w2 ... wn}
variable2 = {s1 s2 ... sn}
value = { v(w1,s1) v(w1,s2) ... v(w1,sn),
...,
v(wn,s1) v(wn,s2) ... v(wn,sn)}
}

For more information on tables, see Table Syntax.

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value

Examples
table = my_table {
property = width
table_type = RC
dim_type = drawn
value_type = delta
width = { 5 6 7 8 }
value = { 0.12 0.13 0.14 0.15}
}

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value_type

value_type
table structure parameter
A required table structure parameter used to specify how the values provided in the table are
treated.
Syntax
value_type = {absolute | delta}
Parameters
• absolute
Specifies that the table should treat the specified values as absolute.
• delta
Specifies that the table should treat the specified values as delta values.
Description
A required parameter that specifies how the values provided in the table are treated. Permitted
types are absolute or delta. Note that not every value_type is supported by every table property.
Table 3-48 describes which value_type settings are allowed for each table property. For more
information on tables, see Table Syntax.

Examples
value_type = delta

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variable

variable
table structure parameter
A required table structure parameter used to specify variables that will be affected by the table
definition.
Syntax
variable = ‘{’w1 w2 ... wn‘}’
Parameters
• { w1 w2 ... wn }
A space delimited set of floating point values enclosed in braces that specify the values
applied to the variation property.
Description
The variable name is followed by an equal sign and a set of space delimited floating point
values enclosed in braces ({ }). Permitted values for variable include width, length, thickness,
spacing, width1, spacing1, width2, spacing2, density, co_co_spacing, gate_co_spacing, li1, li2,
or corners. See Table 3-49 which lists the available variable keywords and their unit value. For
more information on tables, see Table Syntax.

Examples
co_co_spacing = {0.045 0.08 0.2 2.5}

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version

version
Type: Global Parameters
An optional global parameter that specifies the version number of the manufacturing technology
(process) being used in the MIPT file. If it is a single string without spaces, the quotation marks
are not required. If the string is enclosed in quotes, spaces are allowed. It can only be specified
once.
Syntax
version = version_number
Parameters
• version_number
A string value that specifies the version number of the manufacturing technology (process)
being used in the MIPT file.
Examples
Example 1
version = 2.4

Example 2
version = “This is v2.4 of the process”

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via

via
Type: Via layer
Part of the layer definition syntax, this optional layer definition keyword is used to define the
electric and physical characteristics of a via. Layers of this type can be specified multiple times
in the MIPT file. Vias of different sizes and different resistance may be defined between the
same conducting layers.
Syntax
via = layer_name {
measured_from = layername # lower conductor layer_name
measured_to = layername # upper conductor layer_name
area = area_of_via
min_width = minimum_allowed_metal_width
min_spacing = minimum_allowed_metal_spacing
resistance = resistance_per_via
enclosure_down = enclosure_with_respect_to_lower_conductor
enclosure_up = enclosure_with_respect_to_upper_conductor
max_area = maximum_via_area
max_length = maximum_distance_between_vias
min_length = length_of_shape
tc1 = resistance_temperature1_coefficient
tc2 = resistance_temperature2_coefficient
gate_to_via_spacing_min = minimum_allowed_gate_to_via_spacing
extra_width = extra-width_of_side_walls
ronly_layers = ‘{’space_delimited_list_of_r-only_layernames‘}’
parallel_to_gate = no | yes
hidden = false | true
trim = no | yes | actual | merge
}
Parameters
• layer_name
A required unique user-specified name.
• measured_from
A required parameter that specifies lower conductor layer_name.
• measured_to
A required parameter that specifies upper conductor layer_name.
• area
A required parameter if min_width is not specified. Specifies the area of via in
distance_units squared. This parameter cannot be specified with min_width parameter.

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via

• min_width
A required parameter that specifies the minimum allowed metal width if area parameter is
not specified. This parameter cannot be specified with area parameter. The shape is assumed
to be square, with dimensions of min_width * min_width.
• min_spacing
A required parameter that specifies the minimum allowed metal spacing.
• resistance
A required parameter that specifies the resistance per via or contact. The value is specified
in Ohms.
• enclosure_down
A required parameter that specifies enclosure with respect to a lower conductor. This value
is typically 0, and defaults to 0 if not specified.
• enclosure_up
A required parameter that specifies enclosure with respect to an upper conductor. This value
is typically 0, and defaults to 0 if not specified.
• max_area
An optional parameter that specifies the area threshold for large area via connections.
• max_length
An optional parameter that specifies the maximum distance between distributed vias.
• min_length
An optional parameter that specifies the length of the shape. From a dimension perspective,
min_width is the shortest side, while min_length is the longest side. This parameter may be
used together with min_width parameter, but cannot be used with area parameter. The shape
is assumed to be rectangular, with dimensions of min_width * min_length.
• tc1
An optional parameter that specifies the resistance temperature1 coefficient.
• tc2
An optional parameter that specifies the resistance temperature2 coefficient.
• gate_to_via_spacing_min
An optional parameter that specifies the minimum allowed gate to via spacing.
• extra_width
An optional conducting layer parameter that specifies the extra-width of side walls for a
conductor with a trapezoid shape.

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via

• ronly_layers
An optional conducting layer parameter that specifies a space delimited list of r-only layer
names enclosed in braces ({ }).
• parallel_to_gate
An optional parameter, set to either yes or no, that specifies how via width and length are
measured. The default is no, if this parameter is not specified.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
• trim
An optional parameter that controls how resistance is calculated for the via layer. The
default is no, if this parameter is not specified.
Examples
Example 1
This example specifies my_via with a resistance of 37 ohms between layers metal1 and metal7:

via = my_via {
measured_from = metal1
measured_to = metal7
enclosure_down = 0.0000
enclosure_up = 0.0000
area = 0.75
min_spacing = 0.040
resistance = 37
}

Example 2
This example specifies via1 with a resistance of 20 ohms and via2 with a resistance of 30 ohms
between layers metal1 and metal3:

via = via1 {
measured_from = metal1
measured_to = metal3
enclosure_down = 0.0000
enclosure_up = 0.0000
min_width = 0.035
min_spacing = 0.035
resistance = 20
}

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via

via = via2 {
measured_from = metal1
measured_to = metal3
enclosure_down = 0.0000
enclosure_up = 0.0000
min_width = 0.035
min_spacing = 0.035
resistance = 30
}

Example 3
To define a via connection to a base layer with modeling properties max_area and max_length:

base = base1_r {
zbottom = -1
thickness = 1
}

via = b_via {
measured_from = base1_r
measured_to = metal1
enclosure_down = 0.0000
enclosure_up = 0.0000
min_width = 0.030
min_spacing = 0.030
resistance = 50
max_length = 0
max_area = 0.004
tc1 = 0.0000
}

This type of specification is useful in a PERC flow to probe bulk layers.

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 MIPT Keyword Dictionary
well

well
Type: Well layer
Part of the substrate layer definition syntax, this optional layer definition keyword is used to
define the well layer.
Syntax
well = layer_name {
zbottom = bottom_z-coordinate
thickness = z-direction_metal_thickness
resistivity = resistivity_value
eps = value
bulk_min_width = value
bulk_resistance = value
hidden = false | true
}
Parameters
• zbottom
A required bottom z-coordinate of the well layer.
• thickness
A required layer parameter that specifies the thickness of the well layer in the z-direction.
• resistivity
A required parameter that specifies the well layer resistance as rho, typically greater than or
equal to 0.
• eps
A required floating point value that specifies the relative permittivity (dielectric constant).
The value is typically greater than or equal to 0.
• bulk_min_width
An optional layer parameter that specifies the minimum width of the bulk layer in microns.
• bulk_resistance
An optional layer parameter that specifies the sheet resistance of the bulk layer in ohms.
• hidden
An optional parameter, set to either true or false, that specifies to encrypt the layer in the
calibrated rule files. The default is false, if this parameter is not specified.
Description
The well keyword is followed by an equal sign, a unique user-specified layer name, and a list of
parameters enclosed in required braces. Each parameter must appear on its own line. Well

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MIPT Keyword Dictionary
well

layers require zbottom, resistivity, eps, and thickness parameters. This layer type can be
specified once in the MIPT file. Well layers may have tables and they may be coplanar with
other well and substrate layers. The zbottom and thickness parameters are required to establish
the well. For more information on substrate layer structures, see Substrate Layer Structures.

Examples
well = nwell {
zbottom = -0.1
thickness = 0.1
resistivity = 11
eps = 12
}

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widths

widths
Parameter for layer(s): conductor, poly, diffusion, li
An optional conducting layer parameter that specifies a list of width values used to override
modeled widths for the layer. These floating point values must be enclosed in braces ({ }).
Syntax
widths = ‘{’ w1 w2 w3 ... wn ‘}’
Parameters
• ‘{’ w1 w2 w3 ... wn ‘}’
A space delimited list of one or more floating point width values enclosed in braces ({ }).
Examples
conductor = M1 {
thickness = 0.063
hidden = {thickness}
min_width = 0.034
min_spacing = 0.02
tc1 = 1.565e-03
tc2 = -3.159e-07
extra_width = 0.012
swstep = 3
widths = {0.029 0.0483 0.067667 0.145 }
spacings = {0.009 0.0149698 0.0248995 0.041415 0.068887 0.114581
0.190584 0.317001 0.52727 1.74}
}

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MIPT Keyword Dictionary
zbottom

zbottom
Parameter for layer(s): base, conductor, device_li, dielectric, diffusion, ground, li, pcaux, poly,
resistor, seed, substrate, src_drn, tap, well
An optional parameter for layer definitions base, conductor, device_li, dielectric, diffusion,
ground, li, pcaux, poly, resistor, seed, and src_drn that specifies the bottom z-coordinate for this
layer. This parameter is required for substrate, tap, and well layer definitions. Zbottom is not
valid for calibration_type RONLY.
Syntax
zbottom = value
Parameters
• value
An absolute or relative floating point value that specifies the bottom z-coordinate. You can
measure from the top of a reference layer defined by the measured_from keyword. If
measured_from is not specified, zbottom is absolute (measured from z=0).
Description
By default, the bottom of the layer is placed at the top of the previously-defined layer. For most
processes, you do not use zbottom. Often, it is possible to place an entire stack of layers
implicitly, one on top of the other, by relying on the placement of the previous layers. Use
zbottom if you cannot place layers implicitly.

If your process is under development and can potentially change, it is not recommended that
you use fixed locations for the layer definitions. For example, if a layer thickness changes, then
the fixed locations of all the layers above it change and you will need to recalculate all the
locations. Or, if you choose to make a variation of a process that uses worst case values instead
of typical, then it will be difficult to calculate the fixed locations for the variation. Use relative
placement to make process modifications easier.

base — for base layers the zbottom parameter specifies the bottom z-coordinate of the base
layer. It is required if and only if, ztop parameter has not be specified. If you have specified ztop
you are not required to specify zbottom.

dielectric — for dielectric layers the zbottom parameter specifies the bottom z-coordinate when
the dielectric layer is not defined in the specified order; that is, the dielectric layer is not placed
relative to a previous layer’s placement. For most processes, you do not use zbottom. If you
implicitly define your layer order by listing the layers in order, bottom to top, you do not need
zbottom. The zbottom parameter should not be used when defining new dielectric layers.

conductor, poly, diffusion, li — for these layer types the zbottom parameter specifies the
bottom z-coordinate when the metal layer is not implicitly placed; that is, the metal layer is not
placed relative to a previous layer’s placement. You do not need zbottom if you implicitly
define your layer order by listing the layers bottom to top in the mipt file.

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zbottom

substrate, well, tap — for these layer types the zbottom parameter is part of the thickness
specification information. The zbottom parameter can be specified with the ztop parameter or
with the thickness parameter; It cannot be specified with both ztop and thickness in the same
layer definition.

Examples
Example for Base
zbottom = 3

Example for Dielectric

zbottom = 0.26

Example for Conductor, Poly, Diffusion, LI

zbottom = 1.01

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MIPT Keyword Dictionary
ztop

ztop
Parameter for layer(s): base, conductor, device_li, dielectric, diffusion, ground, li, pcaux, poly,
resistor, seed, substrate, src_drn, tap
An optional parameter for layer definitions base, conductor, device_li, dielectric, diffusion,
ground, li, pcaux, poly, resistor, seed, and src_drn that specifies the bottom z-coordinate for this
layer. This parameter is required for substrate and tap layer definitions. Zbottom is not valid for
calibration_type RONLY.
Syntax
ztop = value
Parameters
• value
An absolute or relative floating point value that specifies the top z-coordinate of the layer.
You can measure from the top of a reference layer defined by the measured_from
parameter. If measured_from parameter is not specified, ztop is absolute (measured from
z=0).
Description
base — for base layers the ztop parameter specifies the top z-coordinate when the base layer is
not implicitly placed; that is, the base layer is not placed relative to a previous layer’s
placement. For most processes, you do not use ztop if the layer order is defined from bottom to
top.

dielectric — for dielectric layers the ztop parameter specifies the top z-coordinate when the
dielectric layer is not implicitly placed; that is, the dielectric layer is not placed relative to a
previous layer’s placement. For most processes do not use ztop in dielectric layer definitions.
For trench dielectrics, ztop should be set to 0. The parser verifies this condition.

conductor, poly, diffusion, li — for these layers ztop is top z coordinate for the layer. It is not
placed relative to a previous layer’s placement. For most processes, you do not use ztop. If you
implicitly define your layer order by listing the layers bottom to top, you do not need ztop. For
trenched conductors, ztop should be set to 0 and a ref_layer specified.

substrate, well, tap — for these layer types the ztop parameter is part of the thickness
specification information. The ztop parameter can only be specified with the zbottom
parameter; It cannot be specified with thickness.

Examples
Example for Base
ztop = 1.2

Example for Dielectric

ztop = 0

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ztop

Example for Conductor, Poly, Diffusion, LI

ztop = 1.65

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ztop

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 Chapter 5
MIPT File Utilities

xCalibrate provides utilities for translating technology files to MIPT format and verifying MIPT
files (.mipt).
Interconnect Technology Format (ITF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 354
iRCX File Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 365
Verifying MIPT Structures. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 366
Stack Viewer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 367
Stack Viewer GUI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 368

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MIPT File Utilities
Interconnect Technology Format (ITF)

Interconnect Technology Format (ITF)

The interconnect technology format is a standardized format that describes the detailed
modeling of interconnect parasitic effects for the technology stack. You can translate ITF files
into MIPT files, or mapping and ignore files with the xCalibrate ITF Translation options.
ITF Translation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 354
Auxiliary File Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 362
Translating an ITF File to MIPT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 363
Translating an ITF File to MIPT With an Auxiliary File . . . . . . . . . . . . . . . . . . . . . . . . 364

ITF Translation
With the ITF Translation options you can perform different types of translations.
Use the ITF translation options to convert an:

• ITF file to an MIPT file (out.mipt).

xcalibrate -itf2mipt2 itf_file

• ITF Mapping file to an equivalent PEX SVRF mapping and ignore file (rules.map).
xcalibrate -itfmap2svrf itf_mapping_file

• ITF file with one or more ITF Mapping files to an MIPT file with embedded SVRF
mapping and ignore statements (out.mipt).
xcalibrate -itf2mipt2 itf_file -itfmap itf_mapping_file \
[itf_mapping_file...]

To invoke the translator, enter the command at the shell prompt. For example:

xcalibrate -itf2mipt2 my.itf

creates an MIPT file called out.mipt.

If the information in the ITF file is incomplete, you can provide an auxiliary file (itf.aux) to fill
in the missing information. By default, the translator searches the current working directory for
this file and uses it if it is found. Optionally, to specify an auxiliary file, use the -aux command
line option. For example:

xcalibrate -itf2mipt2 itf_file -aux aux_file -itfmap itf_mapping_file

For information on the contents of the auxiliary file, see Auxiliary File Format.

Table 5-1 summarizes the syntax conversion from ITF to MIPT.

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ITF Translation

Table 5-1. ITF to MIPT Syntax Conversion Table

ITF Syntax MIPT Syntax
air_gap_vs_spacing { airgap = {rectangle | triangle}
spacings {s1s2s3 ...sn} min_gap (value) spacing (s1 ... sn) width(w1 ...wn)
air_gap_widths {w(s1)w(s2) ... w(sn) } thickness (t1 ... tn) distance_from_surface (b1 ... bn)
air_gap_thicknesses {t(s1) t(s2) ... t(sn) See airgap for details.
}
air_gap_bottom_heights {h(s1) h(s2) ...
h(sn)
}
area = value area = value
See area for details.
associated_conductor = ref_layer = layername
conductor_name See ref_layer for details.
background_er = value background_dielectric = value
See background_dielectric for details
bottom_thickness_vs_si_width table = table_name { ... }
[RESISTIVE_ONLY | See THICKNESS_TOP and THICKNESS_BOT
CAPACITIVE_ONLY] { Tables for details.
(S1,R1) (S2,R2) ... (Sn,Rn)
}
channel_er = value channel_er = value
See channel_er for details.
conductor conductor_name { conductor = layername {
... ...
} }
See conductor for details.
conductor conductor_name { diffusion = layername {
layer_type = diffusion ...
... }
} See diffusion for details.

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ITF Translation

Table 5-1. ITF to MIPT Syntax Conversion Table (cont.)

ITF Syntax MIPT Syntax
conductor conductor_name { poly = layername {
layer_type = field_poly ...
... }
} See poly for details.
conductor conductor_name { pcaux = layername {
layer_type = float_gate ...
... }
} See pcaux for details.
conductor conductor_name { seed = layername {
layer_type = gate ...
... }
} See seed for details.
conductor conductor_name { device_li = layername {
layer_type = trench_contact ...
... }
} See device_li for details.
crt1 = value tc1 = value
crt2 = value tc2 = value
See tc1 and tc2 for details.
crt_vs_area{ table = my_tc1_table{ ... }
(area_1,crt1_2, crt2_1) table = my_tc2_table { ... }
(area_2,crt1_2, crt2_1)
...
(area_n,crt1_n, crt2_n)
}
crt_vs_si_width { table = my_tc1_table { ... }
(siw_1, crt1_2, crt2_1) table = my_tc2_table { ...}
(siw_2, crt1_2, crt2_1) See TC1 and TC2 Tables for details.
...
(siw_n, crt1_n, crt2_n)
}

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 MIPT File Utilities
ITF Translation

Table 5-1. ITF to MIPT Syntax Conversion Table (cont.)

ITF Syntax MIPT Syntax
damage_er = value damage_eps = value
See damage_eps for details.
damage_thickness = value damage_thickness = value
See damage_thickness for details.
density_box_weighting_factor {(S1 density_window = {{w1 h1 factor1} ... {wn hn
W1) (S2 W2) (S3 W3) (S4 W4) (S5 W5)} factorn}}
See density_window for details.
dielectric dielectric_name { dielectric = layername {
... ...
} }
See dielectric for details.
drop_lateral_spacing = value Not converted — parsed.
extensionmin = value extension = value
See extension for details.
ER = value eps = value
See eps for details.
er_vs_spacing { table = table_name {
(s1, er1) (s2,er2) (s3,er3) ... See SIDEWALL_K Table for details.
}
etch = value layer_bias = value
Note: theconverted value for MIPT is 2 times the
ITF value. See layer_bias for details.

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ITF Translation

Table 5-1. ITF to MIPT Syntax Conversion Table (cont.)

ITF Syntax MIPT Syntax
etch_vs_width_and_spacing table = table_name { ... }
[etch_from_top | See WIDTH Table for details.
resistive_only |
capacitive_only ]
[parallel_to_reference |
perpendicular_to_reference ]
{
spacings {vector(n) }
widths {vector(m) }
values {matrix(m,n) }
}
fill_ratio = value metal_fill = {fill_ratio fill_spacing fill_width
fill_width = value floating | ground}
fill_spacing = value See metal_fill for details.
fill_type = floating | ground
fin_length = value fin_length = value
See fin_length for details.
fin_spacing = value fin_spacing = value
See fin_spacing for details.
fin_thickness = value fin_thickness = value
See fin_thickness for details.
fin_width = value fin_width = value
See fin_width for details.
floating_gate_to_diffusion_contact_cap Not converted — parsed.
{
gate_polygon_length {val1...valn}
gate_to_contact_spacing {value}
capacitance_values {val1...valn}
}
from = conductor_name meaured_from = layername
to = conductor_name measured_to = layername
See measured_from and measured_to for details.

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ITF Translation

Table 5-1. ITF to MIPT Syntax Conversion Table (cont.)

ITF Syntax MIPT Syntax
gate_oxide_er = value gate_oxide_er = value
See gate_oxide_er for details.
gate_oxide_side_t = value gate_oxide_side_t = value
See gate_poly_side_t for details.
gate_oxide_top_t = value gate_oxide_top_t = value
See gate_oxide_top_t for details.
gate_poly_extension = value gate_poly_side_t = value
See gate_poly_side_t for details.
gate_poly_top_t = value gate_poly_top_t = value
See gate_poly_top_t for details.
gate_to_diffusion_cap { table = table_name { ... }
contact_to_contact_spacings {c1c2 c3 See GATE_FRINGE Table for details.
...}
gate_to_contact_spacings {s1s2 s3 ...}
caps_per_micron {v(c1,s1) v(c2,s1) ...
v(c1,s2) v(c2,s2)...}
}
global_temperature = value temperature = value
See temperature for details
half_node_scale_factor = value half_node_scale_factor = value
See half_node_scale_factor for details
ignore_fieldpoly_to_diffusion_bottom_ Not converted — parsed.
coupling = yes | no
inductive_ground_depth = value Not converted — parsed.
is_conformal diel_type = conformal | trench
See diel_type for details.
linked_to = Not converted — parsed.
measured_from = layername measured_from = layername
See measured_from for details.

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ITF Translation

Table 5-1. ITF to MIPT Syntax Conversion Table (cont.)

ITF Syntax MIPT Syntax
multigate multigate_name { multigate = layername {
... ...
} }
See multigate for details.
parallel_to_reference bias_type = preferred
See bias_type for details.
perpendicular_to_reference bias_type = nonpreferred
See bias_type for details.
process_corner Not converted — parsed.
process_type Not converted — parsed.
process_version Not converted — parsed.
process_node Not converted — parsed.
process_foundry Not converted — parsed.
raised_diffusion_etch = value rsd_spacing = value
See rsd_spacing for details.
raised_diffusion_thickness = value rsd_thickness = value
See rsd_thickness for details.
raised_diffusion_to_gate_smin = value top_enclosure = value
See top_enclosure for details.
raised_diffusion_growth = value rsd_enclosure = value
See rsd_enclosure for details.
reference_direction = vertical | Not converted — parsed.
horizontal
rho = value resistivity = value
See resistivity for details.
rho_vs_si_width_and_spacing{ resistivity = v(s1,w1)
spacings {vector(n)} table = table_name { ... }
widths {vector(m)} See RHO Table for details.
values {matrix(m,n)}
}

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ITF Translation

Table 5-1. ITF to MIPT Syntax Conversion Table (cont.)

ITF Syntax MIPT Syntax
rho_vs_si_width_and_thickness { resistivity = v(t1,w1)
spacings {vector(n)} table = table_name { ... }
widths {vector(m)} See RHO_T Table for details.
values {matrix(m,n)}
}
rpsq = value r_sheet = value
See r_sheet for details.
rpsq_vs_si_width { resistivity = R1
(SIW1,R1) (SIW2,R2) ... (SIWn,Rn)} table = table_name { ... }
See RSH Table for details.
rpsq_vs_width_and_spacing { resistivity = R1
spacings {s1s2s3 ...} table = table_name { ... }
widths {w1w2w3 ...} See RHO Table for details.
values {v(s1,w1)v(s2,w1) ... v(s1,w2)
v(s2,w2) ...}
}
rpv = value resistance = value
See resistance for details.
rpv_vs_area { table = table_name {
(area1,rpv1) (area2,rpv2) (area3,rpv3) property = resistance
...} table_type = R
dim_type = drawn
value_type = absolute
width = {w1 w2 ... wn}
See RESISTANCE Table for details.
side_tangent = value extra_width = value
See extra_width for details.
smin = value min_spacing = value
See min_spacing for details.
sw_t = value swthk = value
See swthk for details.
technology = techname process = process_name
See process for details.

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Auxiliary File Format

Table 5-1. ITF to MIPT Syntax Conversion Table (cont.)

ITF Syntax MIPT Syntax
thickness = value thickness = value
See thickness for details.
thickness_vs_density table = table_name { ... }
[RESISTIVE_ONLY | See THICKNESS_TOP and THICKNESS_BOT
CAPACITIVE_ONLY] { Tables for details.
(D1 R1)(D2 R2) (D3 R3)
(D4 R4)...}
thickness_vs_width_and_spacing table = table_name { ... }
[RESISTIVE_ONLY | See THICKNESS Table for details.
CAPACITIVE_ONLY] {
spacings {vector(n)}
widths {vector(m)}
values {matrix(m,n)}
}
trench_contact_extension_length = trench_contact_extension_length = value
value See trench_contact_extension_length for details.
tw_t = value topthk = value
See topthk for details.
use_si_density = yes | no Not converted — parsed.
wmin = value min_width = value
See min_width for details.
via via_name { via = via_name {
... ...
} }
See via for details.

Auxiliary File Format

Use the auxiliary file (itf.aux) to specify global parameters, override specific syntax, or include
additional layer information in the MIPT file produced with the ITF translation options.
With the exception of the ignore syntax, the auxiliary file can only contain MIPT syntax. Create
and save this file in the directory you intend to run the translation from. If the itf.aux file exists
in the current working directory, the translator automatically reads and parses the content; no

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Translating an ITF File to MIPT

command line option is needed. For information on how to run the translation, see ITF
Translation.

Global Parameters are specified at the beginning of the itf.aux file, outside of any layer
declarations. For example:

plate_loading = yes
li_device_model = single_li_layer

The layer definitions in the auxiliary file must be specified using MIPT layer syntax. For
example:

seed = pc_par_PMOS {
ignore_gate_to_diff = no
}

Use the following auxiliary file syntax to exclude specific layers from translation:

ignore layername [layername...]

where ignore is a required keyword followed by one or more layer names. For example:

ignore ngate

Translating an ITF File to MIPT

An ITF file can be converted to an MIPT file without an auxiliary file.
Prerequisites
• An xCalibrate license. See “Licensing: Parasitic Extraction Products” in the Calibre
Administrator’s Guide for details.
• A syntactically valid ITF file called my.itf.
Procedure
1. To convert my.itf file without using the auxiliary file, make sure the current working
directory does not contain an auxiliary file (*.aux).
2. Invoke the translator with the following command line:
xcalibrate -itf2mipt2 my.itf

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Translating an ITF File to MIPT With an Auxiliary File

Results
A successful conversion run completes with no errors or warnings:
...
parsing succeeded
------------------
Translation succeeded
Translation Done...

The conversion produces an mipt.out file in the current working directory.

Translating an ITF File to MIPT With an Auxiliary

File
To specify global parameters, override specific syntax, or include additional layer information
use an auxiliary file when converting an ITF file to MIPT.
Prerequisites
• An xCalibrate license. See “Licensing: Parasitic Extraction Products” in the Calibre
Administrator’s Guide for details.
• A syntactically valid ITF file.
• An auxiliary file.
Procedure
1. For this example, the current working directory contains the itf.aux file. The file
contains the following global MIPT parameter specification:
li_device_model = dual_li_layers_model1

The heading of the my.itf file is:

$ TECHNOLOGY: typical
$ SPICE model: A SPICE MODEL
TECHNOLOGY = typical
USE_SI_DENSITY = YES
GLOBAL_TEMPERATURE = 25.0
...

2. To convert my.itf file and include the auxiliary file information in the generated mipt.out
file, use either of the following command lines:
xcalibrate -itf2mipt2 my.itf

or
xcalibrate -itf2mipt2 my.itf -aux itf.aux

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iRCX File Format

Results
This conversion produces an mipt.out file with the auxiliary file annotations.
In this example, the heading information in the out.mipt file has been annotated with the
auxiliary file contents; for example:
mipt_source = itf2mipt
mipt_version = 2.0
calibration_type = all
process = typical
date = “Wed Apr 1 14 14:19:47 2015”
author = mentorgraphics
cap_unit = ff
version = “v2015.2_2.0003”
temperature = 25
plate_loading = true
li_device_model = dual_li_layers_model1
corner = typical
...

Note that the li_device_model line specified in the auxiliary file was included in the out.mipt
file.

iRCX File Format

The iRCX format is a standardized technology file format introduced by the foundry, which
integrates all necessary process and reliability information for each technology into a single file.
You can translate iRCX files into MIPT files with the xCalibrate IRCX Translation option.

IRCX Translation
Use the xCalibrate IRCX translation option to convert an iRCX file (filename.ircx) to an MIPT
file.

xcalibrate -ircx2mipt2 ircx_filename.ircx

To invoke the translator, enter the command at the shell prompt. For example:

xcalibrate -ircx2mipt2 my.ircx

creates an MIPT file called my.mipt that can then be used to generate calibrated rule files.

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Verifying MIPT Structures

Verifying MIPT Structures

Applying the -check option parses an MIPT file and checks for logical inconsistencies. It is run
by default when loading an MIPT file into the stack viewer.
Performing the Verification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 366

Performing the Verification

Prior to running calibration, check your MIPT file for syntax errors with the syntax checker and
view the stack structure with the stack viewer.
This procedure describes how to invoke the MIPT file checker and analyze the results.

Prerequisites
You must have a syntactically valid MIPT file and an xCalibrate license. See “Licensing:
Parasitic Extraction Products” in the Calibre Administrator’s Guide for details.

Procedure
1. You can verify the syntax by any of these methods:
• Direct invocation:
xcalibrate -check filename.mipt

• Invoking the stack viewer:

xcalibrate -view filename.mipt

2. The logic checker parses the file and any errors are written to the terminal window.
Results
A possible syntax error:
ERROR: XCAL_2_002: MIPT Parser Error: Technology Parser Error: bad
mipt_version value “3”: must be either “1.0” or “2.0” in file name

The parser exits on the first error it encounters. If this occurs, the remainder of the file was not
checked.
Parsing messages start with the following:
Note: Successfully parsed filename
MIPT checker: Problem with …
ERROR: description
…

If no errors are detected, the last line of the output is:

Note: Successfully parsed filename

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 MIPT File Utilities
Stack Viewer

Stack Viewer
The stack viewer shows a graphical representation of a MIPT file. You can customize the
representation to display only certain measurements, as well as defined devices. It only reads
MIPT format files.

Stack Viewer Invocation

To invoke the stack viewer, enter the following at a shell prompt:

xcalibrate -view filename.mipt

The filename is required. If you do not specify a filename, xCalibrate stops with the following
error:

ERROR XCAL_6_004: Incorrect command line syntax -- Incorrect number of

arguments with “-view”.

The stack viewer also accepts an ITF file as input. For details on the command line syntax for
the stack viewer, see “xcalibrate -view” on page 387.

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MIPT File Utilities
Stack Viewer GUI

Stack Viewer GUI

The stack viewer graphical user interface (GUI) has several features to help you visualize your
technology stack.
Stack Viewer Session Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 368
MIPT Editor Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 369
Log Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370
Layers Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370
Stack View Window. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 372
Menus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 374
Toolbar . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 376

Stack Viewer Session Window

The stack viewer session window opens upon invocation of the tool.
Figure 5-1 shows the default session window.

Figure 5-1. Stack Viewer Session Window

The stack viewer session window (Figure 5-1) is divided into four areas:

• MIPT Editor Window — Use this window to display and edit the MIPT file.

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MIPT Editor Window

• Log Window — Use this window to view informational messages generated while using
the stack viewer; the messages include drawing events and any errors reported by the
syntax checker when editing the MIPT file.
• Layers Window — Use this window to control the appearance of the layers shown in the
displayed structure.
• Stack View Window — Use this window to view a graphical form of the MIPT file. The
master view is shown by default.

MIPT Editor Window

The MIPT Editor window displays the contents of the MIPT file. You can edit the contents of
the file and save it back to disk.
When you save the file, the stack viewer validates the syntax and updates the image shown in
the stack view window to show the changes. If syntax errors are introduced, an error message is
echoed in the log window and the stack view window image disappears. To restore the image,
correct any syntax errors and save the file.

Figure 5-2. MIPT Editor Window

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MIPT File Utilities
Log Window

Log Window
The Log window displays messages generated by the stack viewer.
Figure 5-3 shows the Log window. It displays informational messages that occur while using
the stack viewer, including drawing events and any errors reported by the syntax checker when
editing the MIPT file in the MIPT Editor window.

Figure 5-3. Log Window

Layers Window
The Layers window controls the appearance of the layers in the displayed structure. Use this
window to turn the display of specific layers on or off and select the layers in the graphical
view.
The Layers window is open by default when the stack viewer is invoked. This window may be
undocked from the main stack viewer window or closed to increase the graphical viewing area.
You can also use the Windows > Layers menu selection to toggle the display of the Layers
window.

Figure 5-4 shows the Layers window for the stack viewer.

Figure 5-4. Layers Window

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 MIPT File Utilities
Layers Window

The Layers window contains the layer names and layer types specified in the MIPT file. The
layer names are listed in the order they appear in the MIPT file. Click the check box to toggle
the display of a particular layer. Click the layer name or type to select the layer in the displayed
structure and highlight they corresponding MIPT syntax in the MIPT Editor.

In Figure 5-5, the dielectric layer poly_diel has been selected in the Layers window. Note that
the corresponding syntax for this layer shown in the MIPT Editor window is highlighted in
grey. The layer in the displayed structure is outlined in red.

Figure 5-5. Selected Layer

In Figure 5-6, the check boxes for polyX and via1 layers have been deselected. If you compare
Figure 5-6 and Figure 5-5, you can see these layers (the red rectangle and the light blue
rectangle) are no longer visible in the master view image.

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MIPT File Utilities
Stack View Window

Figure 5-6. Hidden Layers

Stack View Window

The stack view window displays the graphical representation of the stack described in the MIPT
file.
Figure 5-7 shows the stack view window with all the other windows hidden. You can use the
mouse wheel to zoom the stack view window display in or out.

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 MIPT File Utilities
Stack View Window

Figure 5-7. Stack Viewer Main Window

By default, the structure displays most measurements such as conductor thickness, via height,
and minimum width. To view measured values not visible by default, such as dielectric
thickness, hover the cursor over the layer. In Figure 5-8, the planar dielectric thickness
displayed is 0.36 when the cursor is hovered over dielectric layer metal1_diel2.

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MIPT File Utilities
Menus

Figure 5-8. Planar Dielectric Measurement

Menus
Stack viewer functionality can be accessed from the menu bar.
The stack viewer GUI has the following menus:

• File — A pulldown menu that contains Open, Save, Redraw, Export View, and Exit
menu items.
• View — A pulldown menu used to control the graphical stack view.
• Profile — A pulldown menu that contains the profile display controls. Use this menu to
change the profile displayed in the graphical stack view. See Profile Menu for more
information.
• Window — A pulldown menu that controls the display of the MIPT Editor, Layers, and
Log windows.
Figure 5-9 shows the stack viewer menu bar.

Figure 5-9. Stack Viewer Menu Bar

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 MIPT File Utilities
Menus

Profile Menu
The profile menu controls which profile view is shown in the stack view window.

The Profile menu (Figure 5-10) contains two options: Profile 1 and Profile 2. View choices for
each profile are master, sdcont, and ultra. Profile 1 > master and Profile 2 > None are selected
by default.

Figure 5-10. Profile 1 Menu

Use the Profile 2 menu item (Figure 5-11) to show two different graphical views of the stack in
the stack view window.

Figure 5-11. Profile 2 Menu

Figure 5-12 demonstrates the display of both the master and sdcont profiles; Master is selected
in Profile 1 and sdcont is selected in Profile 2. To return to a single stack view, select None in
the Profile 2 menu.

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MIPT File Utilities
Toolbar

Figure 5-12. Master and SDCont Profiles

Toolbar
The stack viewer toolbar provides quick access to the most commonly used operations.
Figure 5-13 shows the stack viewer toolbar.

Figure 5-13. Stack Viewer Toolbar

The tools on the toolbar include:

• Open — Displays the Input Files dialog. Use this dialog to select and open a new MIPT
file in the current session.
• Save — Use this button to save the MIPT file shown in the MIPT Editor window to
disk. This automatically runs the checker and refreshes the graphical view.
• Export View — Displays the Save to file dialog. Use this dialog to save the structure
image to a .PNG file. If two profiles are displayed, both images will be saved.
• Redraw — Use this button to reload the image shown in the stack view window. This
button automatically saves any changes made to the MIPT file in the MIPT Editor
window.

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Toolbar

• Reset Zoom — Use this button to display the entire image in the stack view window.

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Toolbar

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 Chapter 6
xCalibrate Invocation Reference

Invoke xCalibrate from the command line to create calibrated rule files.
This chapter includes sections that provide detailed information on the invocation command
options used to create calibrated rule files for capacitance and resistance.

Reference Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 379

Setting the CALIBRE_HOME Environment Variable . . . . . . . . . . . . . . . . . . . . . . . . . . 379
Command Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 380
xcalibrate -exec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 381
xcalibrate -check . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 385
xcalibrate -view. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 387
xcalibrate -version. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 388
xcalibrate -itf2mipt2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 389
xcalibrate -itfmap2svrf . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 390
xcalibrate -ircx2mipt2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 391

Reference Syntax
The invocation descriptions use font properties and meta-characters to document the command
syntax.
For information on syntax conventions used in this chapter, refer to “Syntax Conventions” on
page 15.

Setting the CALIBRE_HOME Environment

Variable
The xCalibrate tool requires that the CALIBRE_HOME environment variable be set.
See the “Setting the CALIBRE_HOME Environment Variable” section of the Calibre
Administrator’s Guide for details.

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xCalibrate Invocation Reference
Command Descriptions

Command Descriptions
The xCalibrate tool can be invoked to perform various operations.
• xcalibrate -exec — used for calibration and rule file generation.
• xcalibrate -check — used for syntax verification and logical checks.
• xcalibrate -view — used for launching the Stack Viewer.
• xcalibrate -version — used for software version check.
• xcalibrate -itf2mipt2 — used for interconnect technology format (ITF) file translation.
• xcalibrate -itfmap2svrf — used for interconnect technology format (ITF) mapping file
translation.
• xcalibrate -ircx2mipt2 — used for iRCX technology format file translation.

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 xCalibrate Invocation Reference
xcalibrate -exec

xcalibrate -exec
The xCalibrate invocation command, which performs calibration to produce encrypted
capacitance and resistance rule files, rules.C, rules.R, and rules.xact. xCalibrate accepts MIPT
or ITF technology files as input.
Usage
xcalibrate -exec
[-turbo number_of_cpus]
[-remote host[,host…] | -remotefile filename ]
[-noheader]
[-tech tech_directory]
[-xact3d [-tcad] | -rperc | -tsv]
[-rulefile rule_file_name]
[-retry n] [-start start_stage] [-end end_stage]
[-hidden]
{mipt_file_name [-corner "corner_name" ] [-aux auxiliary_file_name] |
{-itf [-corner "corner_name" ] itf_file_name [-aux auxiliary_file_name]
[-itfmap map_file_name [map_file_name ... ]]}}
Parameters
• -exec
A required option to start running calibration.
• -turbo number_of_cpus
Specifies using multi-threaded parallel processing for extraction. The number_of_cpus
argument is a positive integer specifying the number of processors (CPUs) to use during
processing. If you omit this number, the xCalibrate tool runs on the maximum available for
which you have licenses. If you do not apply the -turbo switch, the tool defaults to running
on one processor.
For more information on this option, refer to Calibre Administrator’s Guide.
• -remote host[,host…]
An optional argument that runs the calibration remotely with all cpus on one or more
specified hosts.
• -remotefile filename
An optional switch that is part of the MTflex multi-threaded, parallel processing
architecture, which enables multi-threaded operation on remote hosts of a distributed
network. The filename specifies the pathname of a configuration file (remote_config)
containing information for the local and remote hosts. You must have the required number
of licenses for your job.

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xCalibrate Invocation Reference
xcalibrate -exec

Caution
The remote_config file cannot contain relative references, links, shell variables, or
environment variables that require dereferencing to resolve. Make sure the paths
specified for MGC_HOME and the current working directory are fully qualified paths.

For more details, see the Calibre Administrator’s Guide.

• -noheader
An optional argument that omits the layer stack information and hides the process variation
table information from the beginning of the generated rule file.
• -tech tech_directory
An optional argument pair that specifies where to generate the calibration directory
structure. The default is the current working directory.
• -xact3d [-tcad]
An optional argument that creates rules for the Calibre xACT 3D calibration flow.
Generates an xACT 3D rule file (rules.FS) that contains resistance rules and device
definitions. The optional argument, -tcad, specifies to calibrate layers based on the order
they are defined in the MIPT file (not by their elevations).
• -rperc
An optional argument that creates resistance only rules and can only be run on a metal only
stack (no dielectrics). Generates a single resistance rule file (rules.RO) that also contains the
capacitance rule file header.
• -tsv
An optional argument that allows partial calibration of the 3D stack (SUBSTRATE +
bottom stack description). Generates SUBSTRATE + bottom stack rule files (rules_TSV.R
and rules_TSV.C) that can be combined with the top stack rule files (rules.R and rules.C) in
order to create the full stack description.
• -rulefile rule_file_name
An optional argument set that specifies the common filename prefix for all of the rule file(s)
generated by calibration. The default filename prefix is “rules”.
• -retry n
An optional argument set that specifies the number of times to retry the calibration run. Use
this keyword for occasional field solver failures. If n is not specified, the default is 10.

382 xCalibrate™ Batch User's Manual, v2016.2

 xCalibrate Invocation Reference
xcalibrate -exec

• -start start_stage
An optional argument set that specifies the name of the stage from which to restart the
calibration; for example, masterGenerateModel. The following are examples of stages that
appear in the transcript:
modInitialize
masterGnerateModel
masterExecModel
sux
gen_rules

• -end end_stage
An optional argument set that specifies the name of the stage at which to end the calibration
run. The default is to run to the end of the calibration.
• -hidden
An optional parameter that specifies to encrypt all layer information in the calibrated rule
files.
• mipt_file_name [-aux auxiliary_file_name]
A required parameter that specifies the path to and name of the MIPT file.
Use the optional -aux auxiliary_file_name parameter set to include additional MIPT layer
specification statements defined in the auxiliary_file_name in the calibration. For details
about the auxiliary file format, see “Auxiliary File Format” on page 362.
• -itf itf_file_name
A required parameter set used to specify the name of an ITF file. The ITF file is converted to
an MIPT file (out.mipt) before calibration begins.
• -corner “corner_name”
An optional parameter set used to specify the process corner variation type for the MIPT
file. The corner_name must be enclosed in quotes (“ ”). The process corner variation
choices are typical, cbest, rcbest, cworst, and rcworst. This option can only be used with ITF
or MIPT file types.
The default is the process name if neither this option or the global keyword corner is
specified. This parameter set takes precedence when the global keyword corner is also
specified.
• -aux auxiliary_file_name
An optional parameter set used to specify the auxiliary file containing any missing MIPT
information needed during ITF file translation. This option can only be used with ITF file
types.

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xCalibrate Invocation Reference
xcalibrate -exec

• -itfmap map_file_name [map_file_name ... ]

An optional parameter set used with the -itf parameter to convert an ITF file with one or
more ITF mapping files to an MIPT file with embedded SVRF mapping and ignore
statements. This option can only be used with ITF file types.
Examples
To restart the calibration at the masterGenerateModel stage, enter the following command line:

xcalibrate -exec -start masterExecModel techfile.mipt

The calibration produces:

• a directory called process

• encrypted calibrated rule files, rules.R, rules.C, and rules.xact.

384 xCalibrate™ Batch User's Manual, v2016.2

 xCalibrate Invocation Reference
xcalibrate -check

xcalibrate -check
Command used to check for logical inconsistencies and syntax errors in the MIPT or ITF file.
Perform this check prior to calibration.
Usage
xcalibrate -check mipt_file_name
| {-itf [-corner corner_name] itf_file_name
[-aux auxiliary_file_name]
[-itfmap map_file_name [map_file_name ... ]]}
Parameters
• -check
Switch required to parse and check the MIPT or ITF file.
• mipt_file_name
A required parameter that specifies the path to and name of the MIPT file.
• -itf itf_file_name
A required parameter set used to specify the path to and name of an ITF file. The ITF file is
converted to an MIPT file (out.mipt) before validation begins.
• -corner corner_name
An optional parameter set used to specify the process corner variation type. The process
corner variation choices are typical, cbest, rcbest, cworst, and rcworst. The default is typical
if this option is not specified. This option can only be used with ITF file types.
• -aux auxiliary_file_name
An optional parameter set used to specify the auxiliary file containing any missing MIPT
information needed during ITF file processing. This option can only be used with ITF file
types.
• -itfmap map_file_name [map_file_name ... ]
An optional parameter set used to convert an ITF file with one or more ITF mapping files to
an MIPT file with embedded SVRF mapping and ignore statements. This option can only be
used with ITF file types.
Examples
Example 1
The following command line instructs the xCalibrate tool to parse the MIPT file, and checks for
logical inconsistencies and syntax errors:

xcalibrate -check input.mipt

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xCalibrate Invocation Reference
xcalibrate -check

Example 2
The following command line instructs the xCalibrate tool to convert the ITF file to MIPT file
format, then check for logical inconsistencies and syntax errors:

xcalibrate -check -itf input.itf

386 xCalibrate™ Batch User's Manual, v2016.2

 xCalibrate Invocation Reference
xcalibrate -view

xcalibrate -view
Command used to invoke the stack viewer. The stack viewer shows a graphical representation
of a MIPT or ITF file.
Usage
xcalibrate -view mipt_file_name | {-itf [-corner corner_name] itf_file_name
[-aux auxiliary_file_name] [-itfmap map_file_name [map_file_name ... ]]}
Parameters
• -view
A required parameter that invokes the xCalibrate stack viewer tool.
• mipt_file_name
A required parameter that specifies the path to and name of the MIPT file.
• -itf itf_file_name
A required parameter set used to specify the path to and name of an ITF file. The ITF file is
converted to an MIPT file (out.mipt) before the file is loaded into the stack viewer.
• -corner corner_name
An optional parameter set used to specify the process corner variation type. The process
corner variation choices are typical, cbest, rcbest, cworst, and rcworst. The default is typical
if this option is not specified. This option can only be used with ITF file types.
• -aux auxiliary_file_name
An optional parameter set used to specify the auxiliary file containing any missing MIPT
information needed during ITF file processing. This option can only be used with ITF file
types.
• -itfmap map_file_name [map_file_name ... ]
An optional parameter set used to convert an ITF file with one or more ITF mapping files to
an MIPT file with embedded SVRF mapping and ignore statements. This option can only be
used with ITF file types.
Examples
The following command starts the stack viewer and loads the MIPT file named input.mipt:

xcalibrate -view input.mipt

Related Topics
Stack Viewer

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xCalibrate Invocation Reference
xcalibrate -version

xcalibrate -version
Command used to show the installed xCalibrate product version number.
Usage
xcalibrate -version
Parameters
• -version
Writes the installed xCalibrate product version number to standard output.
Examples
The following statement:

xcalibrate -version

instructs the xCalibrate tool to echo the product version number to stdout. For example:

// xCalibrate v2014.4_34.23 Fri Jan 14 15:35:43 PST 2015

388 xCalibrate™ Batch User's Manual, v2016.2

 xCalibrate Invocation Reference
xcalibrate -itf2mipt2

xcalibrate -itf2mipt2
Command used to convert an interconnect technology format (ITF) file to an MIPT file.
Usage
xcalibrate -itf2mipt2 [-corner corner_name] itf_file_name [-aux auxiliary_file_name]
[-itfmap map_file_name [map_file_name ... ]]
Parameters
• -itf2mipt2 itf_file_name
A required parameter set used to convert an ITF file to an MIPT file.
• -corner corner_name
An optional parameter set used to specify the process corner.variation type for the MIPT
file. The process corner variation choices are typical, cbest, rcbest, cworst, and rcworst. The
default is typical if this option is not specified.
• -aux auxiliary_file_name
An optional parameter set used to specify the auxiliary file containing any missing MIPT
information needed during ITF file translation.
• -itfmap map_file_name [map_file_name ... ]
An optional parameter set used with the -itf2mipt2 to convert an ITF file with one or more
ITF mapping files to an MIPT file with embedded SVRF mapping and ignore statements.
Examples
Example 1
The following command line converts an ITF file to an MIPT file called out.mipt:

xcalibrate -itf2mipt2 input.itf

Example 2
The following command line converts an ITF file, process1.itf, to an MIPT file called out.mipt
using the auxiliary file process1_itf.aux located in the auxfiles directory:

xcalibrate -itf2mipt2 process1.itf -aux auxfiles/process1_itf.aux

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xCalibrate Invocation Reference
xcalibrate -itfmap2svrf

xcalibrate -itfmap2svrf
Command used to convert an interconnect technology format (ITF) mapping file to a PEX
SVRF mapping and ignore file called rules.map.
Usage
xcalibrate -itfmap2svrf itf_mapping_file
Parameters
• -itfmap2svrf itf_mapping_file
A required parameter set used to convert an ITF mapping file to an equivalent PEX SVRF
mapping and ignore file (rules.map).
Examples
The following command line converts an ITF mapping file to a PEX SVRF mapping and ignore
file called rules.map:

xcalibrate -itfmap2svrf itf.map

390 xCalibrate™ Batch User's Manual, v2016.2

 xCalibrate Invocation Reference
xcalibrate -ircx2mipt2

xcalibrate -ircx2mipt2
Command used to convert an iRCX file (filename.ircx) to an MIPT file.
Usage
xcalibrate -ircx2mipt2 ircx_filename
Parameters
• -ircx2mipt2 ircx_filename
A required parameter set used to convert an iRCX file to an MIPT file.
Examples
The following command line converts an iRCX file called input.ircx to an MIPT file called
input.mipt:

xcalibrate -ircx2mipt2 input.ircx

xCalibrate™ Batch User's Manual, v2016.2 391

xCalibrate Invocation Reference
xcalibrate -ircx2mipt2

392 xCalibrate™ Batch User's Manual, v2016.2

 Appendix A
Example MIPT 2.0 Files

This appendix provides examples of MIPT 2.0 files.

• Example 1
• Example 2

Example 1
The figure shows a technology definition and the .mipt file that follows shows how the
technology definition is described.
Figure A-1. Technology Definition

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Example MIPT 2.0 Files
Example 1

Note
The following MIPT file does not include the zbottom settings. The settings are not required
in this case because the layers are defined in the correct order. Marking the polysilicon layer
as type “poly,” the diff layer as “diffusion,” and including a diffusion contact allows this
technology to be automatically mapped to xCalibrate’s field, active, and sdcont profiles.

394 xCalibrate™ Batch User's Manual, v2016.2

 Example MIPT 2.0 Files
Example 1

mipt_version = 2.0
process = example1
date = “10/10/10”
author = MentorGraphics
calibration_type = ALL

background_dielectric = 1

dielectric = base_diel {
# zbottom = 0
thickness = 0.02
diel_type = planar
eps = 4.2
}

diffusion = diff {
# zbottom = 0.02
thickness = 0.18
min_width = 0.12
min_spacing = 0.15
r_sheet = 0.25
src_drn_layers = {nsd psd}
}

contact = odCont {
resistance = 1
min_width = 0.13
min_spacing = 0.15
measured_from = diff
measured_to = metal1
enclosure_up = 0
enclosure_down = 0
gate_to_cont_spacing_min = 0.12
}

dielectric = diff_diel {
diel_type = planar
# zbottom = 0.02
thickness = 0.25
eps = 4.2
}

poly = polyX {
# zbottom = 0.27
thickness = 0.16
min_width = 0.11
min_spacing = 0.16
r_sheet = 0.25
layer_bias = -0.01
}

contact = polyCon {
resistance = 1.1
min_width = 0.13
min_spacing = 0.15
enclosure_up = 0.00
enclosure_down = 0.00

xCalibrate™ Batch User's Manual, v2016.2 395

Example MIPT 2.0 Files
Example 1

measured_from = polyX
measured_to = metal1
}

dielectric = poly_diel {
# zbottom = 0.27
thickness = 0
eps = 5
diel_type = conformal
ref_layer = polyX
topthk = 0.0
swthk = 0.076
}

dielectric = poly_diel2 {
# zbottom = 0.27
thickness = 0.02
eps = 5.5
diel_type = conformal
ref_layer = poly_diel
topthk = 0.02
swthk = 0.02
}

dielectric = poly_diel3 {
diel_type = planar
# zbottom = 0.29
thickness = 0.1
eps = 4.7
}

dielectric = poly_diel4 {
diel_type = planar
# zbottom = 0.39
thickness = 0.2
eps = 3.2
}

conductor = metal1 {
r_sheet = 0.38
# zbottom = 0.59
thickness = 0.24
min_width = 0.13
min_spacing = 0.12
layer_bias = 0.01
}

via = via1 {
resistance = 2
min_width = 0.12
min_spacing = 0.14
enclosure_up = 0.005
enclosure_down = 0.005
measured_from = metal1
measured_to = metal2
}

dielectric = metal1_diel {

396 xCalibrate™ Batch User's Manual, v2016.2

 Example MIPT 2.0 Files
Example 2

diel_type = planar
# zbottom = 0.59
thickness = 0.04
eps = 5
}

dielectric = metal1_diel2 {
diel_type = planar
# zbottom = 0.63
thickness = 0.36
eps = 3
}

conductor = metal2 {
r_sheet = 0.25
# zbottom = 0.99
thickness = 0.3
min_width = 0.16
min_spacing = 0.14
layer_bias = 0.01
}

dielectric = metal2_diel {
diel_type = planar
# zbottom = 0.99
thickness = 0.3
eps = 3.8
}

dielectric = metal2_diel2 {
diel_type = planar
# zbottom = 1.29
thickness = 0.16
eps = 4.2
}

dielectric = metal2_diel3 {
diel_type = planar
# zbottom = 1.45
thickness = 0.25
eps = 3
}

Example 2
The following figure shows a technology definition with trench dielectrics and the MIPT file
that follows shows how the technology definition is described.

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Example MIPT 2.0 Files
Example 2

Figure A-2. Technology Definition with Trench Dielectrics

The following MIPT file describes the technology definition shown in Figure A-2.

mipt_version = 2.0
process = example2
date = “10/10/10”
author = MentorGraphics
calibration_type = ALL

background_dielectric = 1

dielectric = d1 {
diel_type = planar
# zbottom = 0
thickness = 1
eps = 3.9
}

conductor = m1 {
resistivity = 0.5
# zbottom = 1
thickness = 0.6
min_width = 0.3
min_spacing = 0.3
}

dielectric = d2 {
diel_type = conformal
# zbottom = 1
thickness = 0
eps = 3.8
ref_layer = m1
topthk = 0.1
swthk = 0.1
}

398 xCalibrate™ Batch User's Manual, v2016.2

 Example MIPT 2.0 Files
Example 2

dielectric = d3 {
diel_type = planar
# zbottom = 1
thickness = 1
eps = 2.9
}

dielectric = d4 {
diel_type = planar
# zbottom = 2
thickness = 1
eps = 3.9
}

conductor = m2 {
resistivity = 0.25
ztop = 0
measured_from = d4
thickness = 0.6
min_width = 0.3
min_spacing = 0.4
}

# Notice that this trench dielectric, d5, is placed after the metal
# to avoid using ztop and measured_from
dielectric = d5 {
diel_type = trench
# zbottom = 3
thickness = 0
eps = 4.1
ref_layer = m2
topthk = 0.1
swthk = 0.1
}

dielectric = d6 {
diel_type = planar
# zbottom = 3
thickness = 1
eps = 4.9
}

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Example MIPT 2.0 Files
Example 2

400 xCalibrate™ Batch User's Manual, v2016.2

 Glossary

calibration
A 5-stage process the xCalibrate tool uses for solving target equations for their capacitance
constants. The tool subsequently outputs capacitance rule file specification statements suitable
for parasitic extraction by the Calibre xACT and Calibre xRC tools.

curvefitting
The process of solving target equations for their capacitance constant(s), kn. The xCalibrate tool
plots and fits simulation data with a curve representing values of kn; this minimizes total relative
error. The fourth stage of the calibration process.

field solver
A simulation tool for measuring inter-conductor electrical effects due to charged conductors in a
medium in order to calculate effects such as capacitance. The xCalibrate tool calls the field
solver during the third stage (simulation) of the calibration process.

layer
The basic building block of a technology file, described by physical parameters such as thickness
and spacing.

process corners
The variations on a “typical” process: for instance, metal thickness may not be exactly
controlled.

process variation
The statistically predictable variations within a manufacturing process.

RMOL
A high precision intentional resistor device layer, which needs to be calibrated for capacitance
effects.

sensitivity-based rules
SVRF statements for capacitance and resistance calculation that incorporate functions to handle
foundry-defined process corners.

technology file
A file containing the process information. You can create a technology file by setting up a MIPT
file as described in this manual.

xCalibrate™ Batch User's Manual, v2016.2 401

402 xCalibrate™ Batch User's Manual, v2016.2
 Index

bulk_min_width, 133
Index

— Symbols — bulk_resistance, 134

[], 16
{}, 16 —C—
|, 16 Calibration Types, 27
calibration_type, 135
— Numerics — cap_unit, 136
3D-IC, 70 capacitive_only_etch, 137
—A— Case sensitivity, 24
airgap, 120 Celsius, 320
ALL, 27 channel_er, 138
area, 123 Command reference, 379
author, 124 Command syntax, 15
comment keyword, 139
—B— Comments, 24
background_dielectric, 125 cond_type, 144
base, 126 conductor, 140
Base layer, 33 Conductor layer, 38
bulk_min_width, 133 capacitive_only_etch, 137
bulk_resistance, 134 cond_type, 144
example, 34 coplanar_min_spacing, 150
keyword, 34 density_window, 157
multiple, 33 extension, 185
parameters, 35 extra_width, 186
single, 33 keyword, 39, 74
syntax, 126 layer_bias, 232
thickness, 321 max_rlength, 243
zbottom, 348 max_spacing, 244
ztop, 350 max_width, 245
Bias, 103, 105 measured_from, 246
ct2 bias, 149 metal_fill, 248
layer_bias, 232 min_spacing, 251
source/drain edge, 287 min_width, 252
bias_type, 128 parameters, 39, 74
Block Comments, 24 r_sheet, 290
Bold words, 16 resistivity, 280
bot_enclosure, 130 RONLY, 38
botthk, 131 ronly_layers, 285
Bottom enclosure, 130 syntax, 140
bottom_thickness, 132 tc1, 318

xCalibrate™ Batch User's Manual, v2016.2 403

 tc2, 319 Derived layer, 45
thickness, 321 derived_type, 161
thickness_type, 322 keyword, 46
trap_style, 326 max_rlength, 243
zbottom, 348 parameters, 46
ztop, 350 r_sheet, 290
Conformal dielectric, 35, 120, 277 resistance, 279
sidewall thickness, 312 resistivity, 280
TSV, 71 syntax, 159
Connectivity extraction, 381, 385 tc1, 318
contact, 146 tc2, 319
Contact layer, 67 derived_type, 161
area, 123 Device recognition, 381, 385
bottom_thickness, 132 device_li, 162
enclosure_down, 181 Device_li layer, 64
enclosure_up, 182 capacitive_only_etch, 137
extra_width, 186 coplanar_min_spacing, 150
gate_to_cont_spacing_min, 201 devices, 167
keywords, 67 extension, 185
measured_from, 246 extra_width, 186
measured_to, 247 keyword, 65
min_length, 250 layer_bias, 232
min_spacing, 251 li_layers, 240
min_width, 252 max_rlength, 243
parameters, 67 max_spacing, 244
resistance, 279 max_width, 245
ronly_layers, 285 measured_from, 246
src_drn_contact_layers, 304 metal_fill, 248
syntax, 146 min_spacing, 251
tc1, 318 min_width, 252
tc2, 319 parameters, 65
thickness, 321 r_sheet, 290
contact_width2, 149 resistivity, 280
coplanar_min_spacing, 150 ronly_layers, 285
copy, 151 syntax, 162
corner, 152 tc1, 318
Coupling capacitance, 220, 222, 224 tc2, 319
Courier font, 16 thickness, 321
thickness_type, 322
—D— trap_style, 326
damage_eps, 154 zbottom, 348
damage_thickness, 155 ztop, 350
date, 156 device_li_layers, 166
density_window, 157 devices, 167
depletion_width, 158 diel_type, 171
derived, 159

404 xCalibrate™ Batch User's Manual, v2016.2

dielectric, 168 rsd_spacing, 288
Dielectric constant, 154, 183 rsd_thickness, 289
insulator, 230 src_drn_layers, 305
Dielectric layer, 35 syntax, 175
airgap, 120 tc1, 318
botthk, 131 tc2, 319
damage_eps, 154 thickness, 321
damage_thickness, 155 thickness_type, 322
diel_type, 171 trap_style, 326
eps, 183 zbottom, 348
keyword, 37 ztop, 350
measured_from, 246 dim_type, 179
parameters, 37 distance_unit, 180
ref_layer, 277 Distributed vias, 242
swslope, 311 Double pipes, 16
swthk, 312
syntax, 168 —E—
thickness, 321 enclosure_down, 181
thickness_type, 322 enclosure_up, 182
topthk, 324 Encryption, 25, 26
types, 35 eps, 183
zbottom, 348 equation, 184
ztop, 350 Examples
diffusion, 175 Multiple via type, 112
Diffusion layer, 56 Multiple width table, 110
coplanar_min_spacing, 150 table, 108
density_window, 157 Thicknesstable, 111
devices, 167 Width table, 109, 112
extension, 185 extension, 185
extra_width, 186 extra_width, 186
keyword, 57 —F—
layer_bias, 232 FIELDSOLVER, 27, 135
max_rlength, 243 fin_length, 188
max_spacing, 244 fin_spacing, 189
max_width, 245 fin_thickness, 191
measured_from, 246 fin_width, 192
metal_fill, 248 First order temperature coefficient, 318
min_spacing, 251 Font conventions, 15
min_width, 252 Fringe capacitance, 98, 99
parameters, 57
r_sheet, 290 —G—
raised source/drain parameters, 59 gate_diffusion_layer_pair, 194
resistivity, 280 gate_oxide_er, 195
ronly_layers, 285 gate_oxide_side_t, 196
rsd_enclosure, 287 gate_oxide_top_t, 197

xCalibrate™ Batch User's Manual, v2016.2 405

gate_poly_side_t, 198 resistivity, 280
gate_poly_top_t, 199 ronly_layers, 285
gate_to_cont_min_spacing, 200 syntax, 206
gate_to_cont_spacing_min, 201 tc1, 318
gate_to_LI1_min_spacing, 202 tc2, 319
gate_to_LI2_min_spacing, 203 thickness, 321
gate_to_via_min_spacing, 204 thickness_type, 322
gate_to_via_spacing_min, 205 trap_style, 326
Global Parameters zbottom, 348
author, 124 ztop, 350
background_dielectric, 125
calibration_type, 135 —H—
cap_unit, 136 half_node_scale_factor, 209
comment, 139 Heavy font, 16
corner, 152 height, 210
date, 156 hollow_radius, 212
distance_unit, 180 —I—
half_node_scale_factor, 209 ignore_diff_intrinsic, 214
inductance_unit, 229 ignore_diff_to_diff_under_poly, 215
li_device_model, 238 ignore_endcap, 217
mipt_version, 253 ignore_gate_intrinsic, 219
plate_loading, 268 ignore_gate_to_diff, 220
process, 273 ignore_gateext_to_diff, 222
rsh_type, 291 ignore_gateext_to_diff_only, 224
svrf_verbatim, 309 ignore_rsd, 226
temperature, 320 ignore_rsd_intrinsic, 228
tsv_model, 331 inductance_unit, 229
tsv_radius_type, 332 insulator, 230
version, 340 Intrinsic capacitance, 228
Global parameters, 30 Invocation
ground, 206 IRCX2MIPT2, 391
Ground layer, 43 ITF2MIPT2, 389
coplanar_min_spacing, 150 ITFMAP2SVRF, 390
copy, 151 reference syntax, 380
extra_width, 186 iRCX, 365
keyword, 43 IRCX
layer_bias, 232 translation, 365
max_rlength, 243 IRCX2MIPT2, 365, 391
max_spacing, 244 Italic font, 16
max_width, 245 ITF, 354
measured_from, 246 auxiliary file, 362
min_spacing, 251 Interconnect Technology Format, 354
min_width, 252 ITF2MIPT2, 354, 389
parameters, 44 ITFMAP2SVRF, 354, 390
r_sheet, 290 translation, 354

406 xCalibrate™ Batch User's Manual, v2016.2

—L— min_width, 252
Layer bias for capacitance, 137 parameters, 62
Layer definitions, 32 r_sheet, 290
Layer type resistivity, 280
base, 33 ronly_layers, 285
conductor, 38 syntax, 234
contact, 67 tc1, 318
derived, 45 tc2, 319
device_li, 64 thickness, 321
dielectric, 35 thickness_type, 322
diffusion, 56 trap_style, 326
ground, 43 zbottom, 348
li, 62 ztop, 350
multigate, 76 li_device_model, 238
pcaux, 53 li_layers, 240
poly, 47 Local interconnect, 62
resistor, 41 Local interconnect model, 238
seed, 49
src_drn, 59 —M—
Mask dielectric, 35
substrate, 80
max_area, 241
tap, 81
max_length, 242
TSV, 70
max_rlength, 243
uBump, 72
max_spacing, 244
via, 68
max_width, 245
well, 79
MAXAREA, 241
layer_bias, 232
MAXLENGTH, 242
layer_name, 233
measured_from, 246
Layout name extraction, 381, 385
measured_to, 247
Layout netlist, 381, 385
metal_fill, 248
li, 234
Micro-balls, 70
li layer, 62
min_length, 250
coplanar_min_spacing, 150
min_spacing, 251
density_window, 157
min_width, 249, 252
device_li_layers, 166
Minimum keyword, 16
devices, 167
MIPT
extension, 185
File Data, 18
extra_width, 186
File Format, 18
keyword, 62
layer_bias, 232 keywords and parameters, 120
Rules for Creating an MIPT File, 19
max_rlength, 243
Syntax Conventions
max_spacing, 244
max_width, 245 Calibration Types, 27
Case Sensitivity, 24
measured_from, 246
Comments, 24
metal_fill, 248
min_spacing, 251 Encryption, 25, 26
Keywords, 21

xCalibrate™ Batch User's Manual, v2016.2 407

 Use Directive, 25 gate_to_LI2_min_spacing, 203
Units, 21 gate_to_via_min_spacing, 204
Capacitance, 23 ignore_diff_to_diff_under_poly, 215
Distance, 22 ignore_endcap, 217
Inductance, 23 ignore_gate_to_diff, 220
Resistivity, 22 ignore_gateext_to_diff, 222
Temperature, 22 ignore_gateext_to_diff_only, 224
MIPT Examples keyword, 53
Example1, 393 multigate, 257
Example2, 398 parameters, 54
multiple base layer, 34 syntax, 263
mipt_version, 253 Pipes, 16
multigate, 254 Planar dielectric, 35
Multigate layer, 76 Plate loading, 31, 268
channel_er, 138 plate_loading, 268
fin_length, 188 poly, 269
fin_spacing, 189 Poly layer, 47
fin_thickness, 191 capacitive_only_etch, 137
fin_width, 192 coplanar_min_spacing, 150
gate_diffusion_layer_pair, 194 density_window, 157
gate_oxide_er, 195 devices, 167
gate_oxide_side_t, 196 extension, 185
gate_oxide_top_t, 197 extra_width, 186
gate_poly_side_t, 198 keyword, 47
gate_poly_top_t, 199 layer_bias, 232
keyword, 77 max_rlength, 243
parameters, 77 max_spacing, 244
syntax, 254 max_width, 245
trench_contact_extension_length, 327 measured_from, 246
multigate parameter, 257 metal_fill, 248
min_spacing, 251
—N— min_width, 252
Nominal resistance, 321 parameters, 47
—O— r_sheet, 290
Overview, 13 resistivity, 280
ronly_layers, 285
—P— seed_layers, 298
parallel_to_gate, 262 syntax, 269
Parentheses, 16 tc1, 318
pcaux, 263 tc2, 319
PCaux layer, 53 thickness, 321
contact_width2, 149 thickness_type, 322
coplanar_min_spacing, 150 trap_style, 326
gate_to_cont_min_spacing, 200 zbottom, 348
gate_to_LI1_min_spacing, 202 ztop, 350

408 xCalibrate™ Batch User's Manual, v2016.2

process, 30, 273 thickness, 321
Process variation, 83 thickness_type, 322
corners, 152 trap_style, 326
Retargeting, 85 zbottom, 348
sheet resistance, 291 ztop, 350
thickness variation, 84 Retargeting, 85, 128
Profile RONLY, 27, 38, 135
field, 298 ronly_layers, 285
master, 17, 375 rsd_enclosure, 287
sdcont, 151 rsd_spacing, 288
Stack Viewer, 375 rsd_thickness, 289
property, 274 rsh_type, 291
RULEBASED, 27, 135
—Q— Running xCalibrate, 15
Quotation marks, 16
—S—
—R— Second order temperature coefficient, 319
r_sheet, 290 seed, 292
radius, 275 Seed layer, 49
ref_layer, 277 contact_width2, 149
Relative permittivity, 154, 183 devices, 167
resistance, 279 extension, 185
Resistance modeling, 100 extra_width, 186
resistivity, 280 gate_to_cont_min_spacing, 200
resistor, 281 gate_to_LI1_min_spacing, 202
Resistor layer, 41 gate_to_LI2_min_spacing, 203
coplanar_min_spacing, 150 gate_to_via_min_spacing, 204
devices, 167 ignore_diff_intrinsic, 214
extension, 185 ignore_diff_to_diff_under_poly, 215
extra_width, 186 ignore_endcap, 217
keyword, 41 ignore_gate_intrinsic, 219
layer_bias, 232 ignore_gate_to_diff, 220
max_rlength, 243 ignore_gateext_to_diff, 222
max_spacing, 244 ignore_gateext_to_diff_only, 224
max_width, 245 ignore_rsd, 226
measured_from, 246 ignore_rsd_intrinsic, 228
metal_fill, 248 keyword, 49
min_spacing, 251 layer_bias, 232
min_width, 252 max_rlength, 243
parameters, 41 max_spacing, 244
r_sheet, 290 max_width, 245
resistivity, 280 measured_from, 246
ronly_layers, 285 metal_fill, 248
syntax, 281 min_spacing, 251
tc1, 318 min_width, 252
tc2, 319 multigate, 257

xCalibrate™ Batch User's Manual, v2016.2 409

 parameters, 50 tc1, 318
r_sheet, 290 tc2, 319
resistivity, 280 thickness, 321
ronly_layers, 285 thickness_type, 322
rsd_spacing, 288 trap_style, 326
rsd_thickness, 289 zbottom, 348
rst_enclosure, 287 ztop, 350
seed_layers, 298 src_drn_contact_layers, 304
syn tax, 292 src_drn_layers, 305
tc1, 318 Stack Viewer, 367
tc2, 319 Layers Window, 370
thickness, 321 Log Window, 370
thickness_type, 322 Menus, 374
trap_style, 326 Profile Menu, 375
zbottom, 348 Stack View Window, 372
ztop, 350 Text Area, 369
seed_layers, 298 Toolbar, 376
Self inductance, 229 substrate, 307
Slanted words, 16 Substrate layer
SOI type process, 79 bulk_min_width, 133
Spacer dielectric, 35, 36 bulk_resistance, 134
Square parentheses, 16 keyword, 80
src_drn, 300 parameters, 80
Src_drn layer, 59 resistivity, 280
devices, 167 substrate layer structures, 79
extension, 185 syntax, 307
extra_width, 186 thickness, 321
keyword, 60 zbottom, 348
layer_bias, 232 ztop, 350
max_rlength, 243 Substrate layer structures, 79
max_spacing, 244 substrate, 80
max_width, 245 tap, 81
measured_from, 246 well, 79
metal_fill, 248 SVRF verbatim, 31
min_spacing, 251 svrf_verbatim, 309
min_width, 252 swslope, 311
parameters, 60 swthk, 312
r_sheet, 290
resistivity, 280 —T—
ronly_layers, 285 table, 313
rsd_enclosure, 287 Table property, 92, 274
rsd_spacing, 288 Table property types, 92
rsd_thickness, 289 CONTACT_BIAS table, 103
src_drn_layers, 305 CONTACT_WIDTH table, 103
syntax, 300 GATE_FRINGE table, 98
GATE_FRINGE4 table, 99

410 xCalibrate™ Batch User's Manual, v2016.2

 MULT_BIAS table, 105 RSH_T, 100
MULTI_BIAS table example, 110 TC1 and TC2, 102
RESISTANCE table, 102 THICKNESS, 95
RHO table, 101 THICKNESS_BOT, 97
RHO_T table, 101 THICKNESS_TOP, 97
RHO_T table example, 111 VRESISTANCE, 95
RSH table, 100, 106 VWIDTH and VLENGTH, 95
RSH_T table, 100 WIDTH, 94
TC1 table, 102 table_type, 315
TC2 table, 102 thickness variation, 84
THICKNESS table, 95 two dimensional, 89
THICKNESS_BOT table, 97 two-dimensional syntax, 313
THICKNESS_TOP table, 97 value, 336
VLENGTH table, 95 value_type, 338
VLENGTH table example, 112 variable, 339
VRESISTANCE table, 95 Variable keywords, 107
VWIDTH table, 95 table_type, 315
VWIDTH table example, 112 Tables, 88
WIDTH table, 94 tap, 316
WIDTH table example, 109, 112 Tap layer
Table syntax, 88 bulk_min_width, 133
bias_type, 128 bulk_resistance, 134
dim_type, 179 keyword, 81
equation, 184 parameters, 81
Examples, 108 resistivity, 280
keyword, 89 syntax, 316
multiple width tables, 85 thickness, 321
one dimensional, 89 zbottom, 348
one-dimensional syntax, 313 ztop, 350
parameters, 90 tc1, 318
process variation, 83 tc2, 319
property, 274 Temperature, 31
supported layer types, 88 temperature, 320
table property, 92 thickness, 321
table property types, 88, 92 Thickness variation, 84
Table type thickness_type, 322
CONTACT_BIAS, 103 Tool Flow, 14
CONTACT_WIDTH, 103 top_enclosure, 323
GATE_FRINGE, 98 topthk, 324
GATE_FRINGE4, 99 trap_style, 326
MULTI_BIAS, 105 Trapezoid, 186, 326
RESISTANCE, 102 Trench dielectric, 35, 324
RHO, 101 trench_contact_extension_length, 327
RHO_T, 101 TSV, 31, 329
RSH, 100, 106 through silicon via, 70

xCalibrate™ Batch User's Manual, v2016.2 411

TSV layer, 70 Via layer, 68
bot_enclosure, 130 area, 123
depletion_width, 158 enclosure_down, 181
extra_width, 186 enclosure_up, 182
height, 210 extra_width, 186
hollow_radius, 212 gate_to_via_spacing_min, 205
insulator, 230 keyword, 68
keyword, 71 max_area, 241
measured_from, 246 max_length, 242
measured_to, 247 measured_from, 246
parameters, 71 measured_to, 247
radius, 275 min_length, 250
resistivity, 280 min_spacing, 251
syntax, 329 min_width, 252
tc1, 318 parallel_to_gate, 262
tc2, 319 parameters, 69
top_enclosure, 323 resistance, 279
tsv_model, 331 ronly_layers, 285
tsv_radius_type, 332 syntax, 341
tc1, 318
—U— tc2, 319
uBump, 334
uBump layer, 72 —W—
keyword, 73 well, 345
parameters, 73 Well layer, 79
ubump layer, 249 bulk_min_width, 133
min_width, 252 bulk_resistance, 134
syntax, 334 keyword, 79
Underlined words, 16 parameters, 79
Units, 21 resistivity, 280
celsius, 22 syntax, 345
farads, 23 thickness, 321
henry, 23 zbottom, 348
micron, 22
ohms, 22 —X—
Usage syntax, 15 xCalibrate
Use Directive, 25 invocation reference, 381
dielectric layer, 36 Requirements, 14
table syntax, 88, 313 Running, 15
Usage, 15
—V— xcalibrate -exec, 381
value, 336
value_type, 338 —Z—
variable, 339 zbottom, 348
version, 340 ztop, 350
via, 341

412 xCalibrate™ Batch User's Manual, v2016.2

 Third-Party Information

For third-party information, refer to Third-Party Software for Calibre Products.

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commercial computer software within the meaning of the applicable acquisition regulations. Accordingly, pursuant to U.S. FAR 48
CFR 12.212 and DFAR 48 CFR 227.7202, use, duplication and disclosure of the Software by or for the U.S. government or a U.S.
government subcontractor is subject solely to the terms and conditions set forth in this Agreement, which shall supersede any
conflicting terms or conditions in any government order document, except for provisions which are contrary to applicable mandatory
federal laws.

14. THIRD PARTY BENEFICIARY. Mentor Graphics Corporation, Mentor Graphics (Ireland) Limited, Microsoft Corporation and
other licensors may be third party beneficiaries of this Agreement with the right to enforce the obligations set forth herein.

15. REVIEW OF LICENSE USAGE. Customer will monitor the access to and use of Software. With prior written notice and during
Customer’s normal business hours, Mentor Graphics may engage an internationally recognized accounting firm to review Customer’s
software monitoring system and records deemed relevant by the internationally recognized accounting firm to confirm Customer’s
compliance with the terms of this Agreement or U.S. or other local export laws. Such review may include FlexNet (or successor
product) report log files that Customer shall capture and provide at Mentor Graphics’ request. Customer shall make records available in
electronic format and shall fully cooperate with data gathering to support the license review. Mentor Graphics shall bear the expense of
any such review unless a material non-compliance is revealed. Mentor Graphics shall treat as confidential information all information
gained as a result of any request or review and shall only use or disclose such information as required by law or to enforce its rights
under this Agreement. The provisions of this Section 15 shall survive the termination of this Agreement.

16. CONTROLLING LAW, JURISDICTION AND DISPUTE RESOLUTION. The owners of certain Mentor Graphics intellectual
property licensed under this Agreement are located in Ireland and the U.S. To promote consistency around the world, disputes shall be
resolved as follows: excluding conflict of laws rules, this Agreement shall be governed by and construed under the laws of the State of
Oregon, U.S., if Customer is located in North or South America, and the laws of Ireland if Customer is located outside of North or
South America or Japan, and the laws of Japan if Customer is located in Japan. All disputes arising out of or in relation to this
Agreement shall be submitted to the exclusive jurisdiction of the courts of Portland, Oregon when the laws of Oregon apply, or Dublin,
Ireland when the laws of Ireland apply, or the Tokyo District Court when the laws of Japan apply. Notwithstanding the foregoing, all
disputes in Asia (excluding Japan) arising out of or in relation to this Agreement shall be resolved by arbitration in Singapore before a
single arbitrator to be appointed by the chairman of the Singapore International Arbitration Centre (“SIAC”) to be conducted in the
English language, in accordance with the Arbitration Rules of the SIAC in effect at the time of the dispute, which rules are deemed to be
incorporated by reference in this section. Nothing in this section shall restrict Mentor Graphics’ right to bring an action (including for
example a motion for injunctive relief) against Customer in the jurisdiction where Customer’s place of business is located. The United
Nations Convention on Contracts for the International Sale of Goods does not apply to this Agreement.

17. SEVERABILITY. If any provision of this Agreement is held by a court of competent jurisdiction to be void, invalid, unenforceable or
illegal, such provision shall be severed from this Agreement and the remaining provisions will remain in full force and effect.

18. MISCELLANEOUS. This Agreement contains the parties’ entire understanding relating to its subject matter and supersedes all prior
or contemporaneous agreements. Any translation of this Agreement is provided to comply with local legal requirements only. In the
event of a dispute between the English and any non-English versions, the English version of this Agreement shall govern to the extent
not prohibited by local law in the applicable jurisdiction. This Agreement may only be modified in writing, signed by an authorized
representative of each party. Waiver of terms or excuse of breach must be in writing and shall not constitute subsequent consent, waiver
or excuse.

Rev. 151102, Part No. 265968