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SCD Tutorial

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28 views7 pages

SCD Tutorial

Uploaded by

archanadey713206
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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A p-n-p BIT has emitter (Nz), base (Ng), and collector (Nc) doping of 10°/cm?, 10"* cm, and 10°7/em’, respectively, and a base width of 0.5 micron. Calculate the peak electric field at the CB jun for the normal active mode of operation with a Vow base width narrowing at this voltage, ignoring the EB depletion region? What impact does this have on the output characteristics of the BJT, and what is this effect called? Va = Eat py BANS nin Psa ow? nj git x0? mitz Qsnd ton? = Bex orn = ORG Lan BEEK IO E/ sp gniort F —_ ee er me eer ly rnnowsing A : 5 ait eee cstem Vine bone te cakes puoulls in am SRE ey ig collad Bow OndSh wededohor pr Vow wn ead Cannel Assume the JFET shown in Fig.l is Si and has p* regions doped with 10° acceptors/cm and a channel with 10° donors/em®. If the channel halfwidth a is 1 um, ‘compare Vp with Vo. What voltage Vep is required to cause pinch-off when Vo_ is included? With Vg =-3 V, at what value of Vp does the current saturate cates Ae ~ 722’ Gs, tat 4 pe DEI = 0: e139V = eons tvxke Porn? ~ comin ports aye thh pororbih Snag Wheceen We wy a =S2ehve™) Lin* en LS =: Nipets 2es Qrlaw ves ule wey vex tes3-Ve=@is3- 0° BBDV = ETE Characteristics of an npn Si BJT: Consider an idealized silicon npn bipolar transistor with the properties in Table 2. Assume uniform doping in each region, The emitter and base widths are between metallurgical junctions (not neutral regions). The cross- sectional area is 100 ym x 100 jm. The transistor is biased to operate in the normal active mode, The base-emitter forward bias voltage is 0.6 V and the reverse bias base— collector voltage is 18 V. Table 2-Propertie of an np BIT Emitter | Emitter Hole Base Base Electron | Collector width | doping | lifetime | width | doping | Lifetime | doping in in base emitter 10pm [10% em=3 [tons | Sum | 10" em=3 | 200ns | 107 m= a. Calculate the depletion layer width extending from the collector into the base and also from the emitter into the base. What is the width of the neutral base region? Base Base Electron | Collector width | doping | Lifetime | doping in base Emitter | Emitter width | doping 10m | 10"? em=3 | 10.ns Sum 10° cm=3 | 200 ns 10° em=? VEE = HOT IM NENS @ ggasev x bn ERO eo nao G mat sate ‘ ae Wee jase SOU SET WE _ ® poate 8 as moh (889 0°6),, Vex? = 0 23K tard? < BAS ve ptt vot a ket (nNENS = o-2s?™ Sm ashe? . 4 oe zeswtiw) (ae ‘The JFET Consider an n-channel JFET that has a symmetric p*n gate-channel structure as shown in Fig, 2 and Fig 3. Let L be the gate length, Z the gate width, and 2a the channel thickness. The pinch-off voltage is given by Question 4. The drain saturation current Ipssis the drain current when Veg = 0. This occurs when Vos Voscsat) = Vp (Figure 4), so Ipss = Vy Gen» Where Gey is the Conductance of the channel between the source and the pinched-off point (Figure 5). Taking into account the shape of the channel at pinch-off, if Gen is about one-third of the conductance of the free or unmodulated (rectangular) channel, show that Ipss = ¥ EI [estven) A particular n-channel JFETwith a symmetric p*n gate-channel structure has a pinch- off voltage of 3.9 V and an Ipss of 5.5 mA. If the gate and channel dopant concentrations are Ny = 10% cm™? and Np = 10° cm™? , respectively, find the channel thickness 2a and Z/L. If L= 10 um, what is Z? No ¢ Nye Pew? Np = 10% ew Vee BV Loss SKA pe Anse Neh 3 genase um done ty wt ODE a a2 apa PAGO EIN aQI BHD BEKO oe : - gis io = 3B9n FZ z Gar se G24 lO = Ver

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