CS60N06

N-Channel Trench Power MOSFET

General Description
The CS60N06 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low RDS(ON) is suitable for PWM, load
switching applications.

Features
● VDS=60V；ID=80A@ VGS=10V；
RDS(ON)<7.2mΩ @ VGS=10V
● Ultra Low On-Resistance To-220 Top View Schematic Diagram
● High UIS and UIS 100% Test

Application
● Hard Switched and High Frequency Circuits VDS = 60 V
● Uninterruptible Power Supply
ID = 80 A

RDS(ON) = 6.2 mΩ

Package Marking and Ordering Information

Device Marking Device Device Package Reel Size Tape width Quantity

CS60N06 CS60N06 TO-220 - - -

Table 1. Absolute Maximum Ratings (TA=25℃)

Symbol Parameter Value Unit
VDS Drain-Source Voltage (VGS=0V） 60 V

VGS Gate-Source Voltage (VDS=0V) ±25 V

ID (DC) Drain Current (DC) at Tc=25℃ 80 A

ID (DC) Drain Current (DC) at Tc=100℃ 56 A

(Note 1)
IDM (pluse) Drain Current-Continuous@ Current-Pulsed 320 A

dv/dt Peak Diode Recovery Voltage 9.5 V/ns

PD Maximum Power Dissipation(Tc=25℃) 100 W

Derating Factor 0.66 W/℃

(Note 2)
EAS Single Pulse Avalanche Energy 410 mJ

TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175 ℃

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=33V,VG=10V,ID=40.5A

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 CS60N06
Table 2. Thermal Characteristic
Symbol Parameter Value Max Unit
RJC Thermal Resistance,Junction-to-Case --- 1.5 ℃/W

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Unit
On/Off States

BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 60 V

IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=60V,VGS=0V 1 μA

IDSS Zero Gate Voltage Drain Current(Tc=125℃) VDS=60V,VGS=0V 10 μA

IGSS Gate-Body Leakage Current VGS=±25V,VDS=0V ±100 nA

VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 2 4 V

RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=40A 6.2 7.2 mΩ

Dynamic Characteristics

gFS Forward Transconductance VDS=10V,ID=15A 20 S

Ciss Input Capacitance 3290 pF

VDS=25V,VGS=0V,
Coss Output Capacitance 335 pF
f=1.0MHz
Crss Reverse Transfer Capacitance 245 pF

Qg Total Gate Charge 90 nC

VDS=50V,ID=40A,
Qgs Gate-Source Charge 18 nC
VGS=10V
Qgd Gate-Drain Charge 42 nC

Switching Times

td(on) Turn-on Delay Time 21 nS

tr Turn-on Rise Time VDD=30V,ID=2A,RL=15Ω 31 nS

VGS=10V,RG=2.5Ω
td(off) Turn-Off Delay Time 63 nS

tf Turn-Off Fall Time 29 nS

Source-Drain Diode Characteristics

ISD Source-Drain Current(Body Diode) 80 A

ISDM Pulsed Source-Drain Current(Body Diode) 320 A

(Note 1)
VSD Forward On Voltage TJ=25℃,ISD=40A,VGS=0V 0.89 0.99 V
(Note 1)
trr Reverse Recovery Time TJ=25℃,IF=75A 26 nS
(Note 1) di/dt=100A/μs
Qrr Reverse Recovery Charge 35 nC

ton Forward Turn-on Time Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃

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 CS60N06
Test Circuit
1）E AS Test Circuits

2）Gate Charge Test Circuit:

3）Switch Time Test Circuit：

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 CS60N06
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)

Figure1. Output Characteristics Figure2. Transfer Characteristics

ID (A)

ID (A)
VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V)

Figure3. BVDSS vs Junction Temperature Figure4. ID vs Junction Temperature

ID-Drain Current(A)

Temperature（℃） Temperature（℃）

Figure5. VGS(th) vs Junction Temperature Figure6. Rdson vs Junction Temperature

Temperature（℃）

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 CS60N06
Figure7. Gate Charge Figure8. Capacitance vs Vds

C Capacitance (pF)
VGS (Volts)

Qg Gate Charge (nC) VDS Drain-Source Voltage (V)

Figure9. Source- Drain Diode Forward Figure10. Safe Operation Area

IS - Source Current (A)

ID-Drain Current(A)

10us

1ms
10ms

DC

Tc = 25℃

VSD Source-Drain Voltage (V) VDS Drain-Source Voltage (V)

Figure11. Normalized Maximum Transient Thermal Impedance

Transient Thermal Impedance
R(t), Normalized Effective

Square Wave Pluse Duration(sec)

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 CS60N06
TO-220 Package Information

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max
A 4.300 4.700 0.169 .
0.185
A1 2.200 2.600 0.087 0.102
b 0.700 0.950 0.028 0.037
b1 1.170 1.410 0.046 0.056
c 0.450 0.650 0.018 0.026
c1 1.200 1.400 0.047 0.055
D 9.600 10.400 0.378 0.409
E 8.8500 9.750 0.348 0.384
E1 12.650 12.950 0.498 0.510
e 2.540 TYP. 0.100TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.750 14.300 0.502 0.563
L1 2.850 3.950 0.112 0.156
V 7.500 REF. 0.295 REF.
Φ 3.400 4.000 0.134 0.157

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