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BJT Biasing

BJT biasing hand note

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Rasel Mahmud
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25 views25 pages

BJT Biasing

BJT biasing hand note

Uploaded by

Rasel Mahmud
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Transistor biasing = “he proper Flour of zero signal mone ee eS of proper collector -em rm ‘ol j= uri : : : passage of sig) le Known a% treonsistore a a Faltlal Amplification and Tt eatisfied conditions: se proeers of raisieg tne strength of a aeak signal uithouf any Base collector junction alusoys seen ais suversed biased. -ra following conditions uct be cadisfied for faithful amplification + D proper, Bero signa collectors curren. mini: 2 proper’, bane emitter: voltage at any iwhtonb. SD peeopneaDabre pon rcdleetore- erritterc voltage abany instant # Whats the ‘ porcam cbers eee of inheren} varciatiom The inhenenp vesciations of tromsi en “the operates aniston * panameters urdaiteha) amplidication . q™ of transistor } Deseniba dna nacamity of BIT biasing? 2013 Wie. vacie puppose of -treansistor biasing |e to keep she. base -emiffer. Juneton properly fowsxrd biased and aolleatot base junction properly mevernsed biased ducing application ob signal AL ibis not biased corerectly i+ could cern inelfieienty and produce distortion in the cute signal. @-point is nok smiddlz, out pub sig 3B the signal is elipped - mo) is distorted Methods ef streansistore biasing + D Base resistor method ") Emitter biase © > 2 Biasing with collector ~ teadback resi¢don. ©) Voltage divider method . Method + Clived bias method Base Resistor 4n Haig method, Re (righ masistanes) 14 eonnected belmeen Ine base and +ve end of} supply don npn “transistor and between tre base and -ve end of supply dor pnp transistor. Is Ro (righ resistance) Cireu} analysis + leh Te be the maquired zero signal eolleetore cureent + Te To = Applying kvi in the input side, Vec = IpRe+ Vor = Iske = Vec™ Vee As Vee end 2g ae known 8 Vag canbe seen trom tre sransistor manual, so Value Rg ean be tound trom 2 © ‘ Sinee Vag is generally pute small an compared to Veg + $0. 1b Ure, meget. Ra = “Se. a Ie Glabilily Jacl, g = 4d: #Why this called Hed biag method ? 4n Anis method, Veo |8 & Hirced Known qortty and Ip is chosen at some suitable value: Henee, Re ean always be Sound diwehy ond ore this season this method is Sometimes called $ixed bias method Advantages © 4+ is verey simple a only one veasistanes Rais reaqpined + @ Biasing condiHons can easily be sefand the caleulaHom aoe. simple: a) Thera is no leading ok tne sous by the blosing Zieeaui} einea ne susistore is empleyed seTeosé base- emilfere gunction: Disadvantages > Q-Mis method. providen Poot Btaloili schon - a apene eS Hage 1s tempereahotastise. and eimdividual vasdechons on self inerease in eoljoetor CT De stabi lity factore is very high: we 4n this method &-peint is depend on p- hour G- point is atteefed D Etfect+ ot Vor = Vee ~ VBE Re deereare! in Vag inettenses as = ig -Thie well anidt Hee. g-point Ge-fle © Neg = Vee" Tee) Te etfect of change. iw Vee is megligibe \h Vee >> Vet: at least te Himes grecter dian Vee » 7 ) Ebfect ef Teno + Nee. The How of mevercse lea e@ Curcrenf- Teso eneats a voltage drop eres ‘Ra that adds te the base voltage - The reeforee. shag] in Tego shits the B-pom}. 4Ne low Emitters Bias Method * 1) dt uses tuo seperate de voltage Souces +Vec. and -Vee * two supply voltages uull be equal Here ip a vesiston Re Ane emitter: are}, Cireit analysis t Appling KVL in the inpub side, TeRe +Ver + TeRe ~ Vee =° = TeRe +Vee +TeRe => Vee Now, Te “ie and Tes Te So, Lr Vee = =p Ret Vor + TeRe Ri > Vee -Voe = Te (BB Re): Ver - Mi oe &Te = —— Re + Bo ps Emi Here voltage wort: te grond | Ve = - Vee + Te Re Base voltage aLitteeto ground. Ne = Ver + Ve * Subimactigg Ve trom Ve and usigy the approsimation teeTe we re. Ve-Ve = (Vee-FeRe) -(-Vee + TeRe)- Veg = Vee }VEe 7 Te (Re+ Re) Stability of Emitter bias ue _ Vee ~VeE Te Stes oe Pp Te depends on Veg and J% beth of uthien change with +emperahore+ Yee Ver Be tne Te = 4b Red Le = this condition maxes te(=Te) independent} of Pp 4$ Vee >>Ver > then, Te — _VEE . Re this condition makes Te Et») independent of Veg . Ag te Ete) is independent ot end Vag > S-Pomb is nof affected by dine Variahont mm Mese patametens - Biasing base voltage Veo! Circeuit analysis + KvL at input side. Vee -TeRe-Ie Rs ~Yor =° Vee ~ Vou ~J>Ta Re Te > Re = Nex = Vee + Vea > Veg = Vee - Ver Nee ~Vor - Re i In a Nee ~ Vee uth Collector feadback Resistor Heme, the mequined zene signa} base current is deleremined mot by Vac by the collector: - Re (ste = 272) ; here Te rey New Advantages : dD Ab ig a simple method an it reequines only one viesistence Rg - WD Wis cineuib provides some stabilisation of tne opersahigg point}: Disad vantage* : Dothis circeult provides & e_ seduces the gain of Yue amptitier: ve Feedback tuhich — This circeust doesnot provide good stabilisation because stobllily factor is faiely highs Thee iF Ie Lesser “tran that of fixed bias- Pliage See Bias foe RR Re | R, Ee R: Re 2 Ra Re ARIAS REE | a! New ao RR, Ry Vee ¥ Ro : May = Vp = Se 2 RR RL tae Ry = RURL Applying KvL at inpud side, Min -IeRan~ Vee “Te Re = Van - Vi wy R, Ra Is — Vin - Vor E _. Ray 4 +) Re eG) Te Ve KVL ob oubpub side , a R, Mee ~TeRe -Vee -IE RE =o ie i + = Vee ~le (Ret Re he? > Veg = Vee “Te (e+ Re) . 7 \te ~te | : Vee X Ro t Va = RFR Va-Vor- WlERe = ee Re V2.- Vee ee ee ida Re \ a Te! TRF pis Te =/210 KVL at outpub. Nee -TeRe 7 Vee” Te Re =e t > Veg = Vee 7 Te Ge*Rs) i Stability factor : St ime (ey 4tAne ratio. “ meee ted ‘ $s veny emall, then a com be => “ 4) > A. ee es we *Explam the ebfee} of base eunnent Ge), collector Tesistanee (Re) and supply voltage Qee) or lead Line charmetersties of a BIT: 204% des Vee, This Line a6 4een on the Gere rueognized ax tne load Line since ib} is charmmetenized by the Load mesictore Re - New “E elect of base current Cra) 2 4h cre varey the magnitude of Te vy varyiyy the Res the g-point chihin towards, uputond om dounuard s6rer% +he Load line a4 shou in Bq Te New ve - Rs>Rar Ry Tes we nm} Ia, + Mee Veg Ve” XE dy: movement of g-poinks tg: etfech of increasing of ineransings Ta level of Re on the lead Mine. etheef of collector: mesistanes (RD. F046, 201s Ab use maintain a fa Vee.» and change only the valueot Re we tind Whe toad Line Shifting as indicate - Af we keop Te comtand, ue tind +he @- point chagigg it's position 0% dicated in the same hg of supply volloge Qec) 2046-2045 A} use veep Re Somstant, and vary only Veo, ue sez Load Lina moving a depicted in below Hgune- Te etfeet Ag Veo, > Veen? Vees . of af v ce Mee, Vee, Vee, eHeek of Vee onthe load Line and @ point. Mid ~ poing- Biasing : ees Ney = Nee Operating poin} + :2046- noses, The 2ero signal valuex of Te and Vey arte unoun as Hie opercati poinP. AP is called operat poin? because tne variahons eb Te and Veg take place abouf this poinp tuken signal ie appiied. Lead Line . 2016. 20415° A load Line is a Line druaun on the chansctersties curve, a qreph of dhe curereenf- ve tue voltage in @ non-linear device Line transistor « Tete) Veg = Vee~TeRe + Yew When Tn = 0 . Re Mee Grax) = Yee ood See “then Vee =0 Mee Tab SE - New Meg Why vollege divider biasing ie the popular winsig ord 2 2013- @ The tramistor. un dere this biasi Alusays Temains in the active region Gre emitter pase dunetion is alusays sorcusond bianed) + i =" des © Voltage divider biasing is bela (2)- dependent and hence is moree stable than any other biasing. @ the +em perature: will have vio effect on &- point. © Wis biasing give a geod oability compare -to anotner ad lta ¥Which value of J2 to be used ? Normally, re. treansistore =peci ication shee Lishs a. ™inimum Value (Bnin) ere PB -In Wrap ease, the geomet Auto valuex should be used . Pan =A Prin Pima Value Ga) ie average of die of a BIT when # What is the necessity of blasi operating a% an ample 2 2A, Biasing a BIT circeni+ meam to provide appro- piate dirtcech potenbalk and eunnents » usi externa) souress, te estublish an opertati on @-point in tne. active region . 4n am amplifier. circuit, if tre oulpub signal is nok a falthtup reproduction of the Input signe? - tor example ~ if ib is clipped on ome side. he opereating pomp vs unsatisfactory and should be relocated on the eolleetor charmetersties. $0, blasiag of 2 BIT In amplifier cine is very impor-tanf te get feilhtl amplification. Whol ib the etteet of Re masister in an emi ter Stabilized biasing ? 2ols- 2014. When +empercoturce \neneaser, Te inerceases . When Ae volloge drop scro4s Re We) 2 at the base tremaim arreangemenf. Wins 4b Vag decrease, De inerceases » Ineneases. Vg, the vol tized - duc to our biasigg tne voltage droop Vee decreease*: CICLASCH 5 Hine omginal S- point Te decreases 4b Ts 44 ten Te deereeases bringing ib back te tousrcds Value: tke wise in Te duc +e temperatures tn countered by a felt in Te duc te te teedback action o} Re: 2012- $b) + 2013-(S-b)* he. Load Line shou in Sqoe, design a voltage divi dere bias circuit so tra) tre -heamsistore opercates Ab the desined G-pomp. “Man caleulete dine value of Vee 0+. 80 < fue S 10°: Te Gna) Jo Sol ao Vee = 20V TeGap) = toma. Cae Veen =40v- = Teg = sma. Sov 2 Ge Pre O98) =A ox hoo New = ize.ge “179- Ve = a 7 = =e2v. Re = JE = -o-ann Exete] Q JOR, > PRE PR = 12D% 0.4 to = esc kKN- Nee - Te Re ~ Veg -TeRe = 0 > Re = 20-40 - 5x04 s St-cun. =MetVe = 0-742 ~azy _ Vee XR RoR 20x Z. 16 Rie RY > 22 >R = 4s SARKN son JB = 42 is = 10-0.%7 = 2.3 Vee = Vor +3 ei A av vee = 7 72% 2017-(S-6)t Determine Ie nwa vTe .Ve and Vee for the Sallowing netusrork - +18 Sot. JBRe > 10Re INA > 1AB0OK RTD tox Slo > 225% F100 [rot setistied | exac}mathod ¢ ne 12-Gw+se) [418-0 >I = 0-035mA. Rin = (WR, = S40 SLO = ase un. J Vy, - S10 K 00385 +18 =0 > My Fro-isv: + ~ONS -295 Tg -0-2-7.5¥IgX131 H1B=0 tev 7 Vin SIs =o.c1aemA [ral tye | de=A1e = 1-724mA 2 piev dees oun ape ee asc > Vee = 124 (ai orad) x2 etn ine ous i 418 -1.794xO4 -Ve =O DVe= 4-6R4EV Vee =Ve-V_e = serne- Cant) = 6 1i4ev 2046-G-2)? Determine tne volinges of aU nodes and tue curnents through all brane her. Assume trot the stransistor’s Js 6 specrtied +e be at least so- Gon- sidering “hue -framsister. 24 4 sition tramsistors) - + 410v Sel. vy, et, . r 7 =6V =50 wo . AR 6-Vee -Iex3.3=0 ts ->Te = a | = 4-eLmA- ' meu Lb qs = = 1-64 = Art = Sap = 0 08ismA- ; Te=feIg = 4-52mA- 10-4-2x4-52 -Ve =o > Ne = 2-624v- Ne = 23x 4-645 5-343-Ve [Aes] . 2015- ED > For the circuit in Hgune > tind tne voltages abali nodes and tre curren} Peregh aU branches Sol! +12 -21¢-0.7 =o Atay >TIe = seem: + = ee 22 1, = = 2:65 _sLo.0 er cara ssoymA E Te 2 BIg = 5:6mAs ee e 42-TeRe-Veg - Tp Re $42=0 Rez thn > Veg = RAV: ~jav = do-TeRe -Ve =O i D> Ve = S4V. Ve Ie - so -0-% sio+ S1x1-5 \1 = 0-014 mA. Te = BIg = 137A: Te - (24) Te = 4-3LmA. Ve Woue'= TLR. FO = B41 ABBY Me = TeRe spsixi-g=1oesv- Veg = Ve-Ve = tH 245V Mee = Veg +Vee > Ven = Vee ~Vee = 4.216V # Why voltage divider. biasing te the popular biadi arcnamgement 2 Ker #Whab axe tre major differences betuscen NPM and PNP tramsistors ? NPN : -PNP. She, current flouss trom collecton |The. currant Hous Srom emilter |4o emittertereminal _ 4o colleator. terminal . One. p-type semicondueton is | One. N-lype semicconducstor 1s send wiehad. belucen the hue sanduiched leetuaen the tuo N-lype semiconductors - type cemiconductors- je Se ee a Pea a Magority charg j@uniens — | Majoreity charge caruciens hela+ electron - a a t Sustehing time Faster: | Susitehing sHime slower: Trined Weasel gunetion terior base gunction foruand biased - $orwared viased- | ea aa St starts conduction once 4} starts conduction once elee}rom enter the base Whe hok« enter tre base region : 2 rage : ; ss the collector load applied betucen emitter amplification . Assume hae Pre Ble siomv = = 25mA Since ha. 1s nearly 1- Te=Ie =257A- Nop = IeRe = 25V Vollege amplification, Ay = * A aommon base tramistor, empiter qtesisfanee of 202 ard Obpup resistance ef took: Vs dem: Sf asignal o}f svomV is and base, tind He voltege Jo ve nearly one - Te * Rouf Re=dka Vout lovkan— Vout 25 eet = sgn Soorv = s0- Es). hes an inpub Boylestade 2 GALS 4-14, 4-160 4-48, 420-422, 423, $24, 495.

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