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1.1 Study of MOSFET

• MOSFET is metal oxide semiconductor field effect transistor.

• MOSFET is a three terminal device. The three terminals are gate (G), drain
(D) andsource (S)
• MOSFET is a unipolar device as its operation depends on flow of majority
charge carriersonly.
• It is a voltage controlled device requiring a small input gate voltage.
• It has high input impedance.
• MOSFET is operated in two states viz., ON STATE and OFF STATE.

A power MOSFET is a special type of metal oxide semiconductor field effect

transistor. Itis specially designed to handle high-level powers. The power MOSFET’s are
constructed ina V configuration. Therefore, it is also called as V-MOSFET, VFET

Power MOSFETs are of two types

1. n- channel Enhancement MOSFETs

2. p- channel Enhancement MOSFETs

n-channel enhancement MOSFET is commonly used due to the higher

mobility of electrons.

MOSFET CONSTRUCTION

Power MOSFETs are based on vertical structure, the doping and the thickness of the
epitaxial layer decide the voltage rating while the channel width decides its current
rating. This is the reason because of which they can sustain high blocking voltage and
high current, making them suitable for low power switching applications.

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The figure shows the planar diffused MOSFET structure for n-channel.

Fig 1.1.1 Structure of MOSFET

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 21]

On n+ substrate, high resistivity n- layer is epitaxial grown. The thickness of n- layer

decides the voltage blocking capability of the power Mosfets. The lightly doped n-type
semiconductor forms the main body of the device. Two heavily doped p-type regions
are there in the body separated by a certain distance L. Now there is a thin layer of
silicon dioxide (SiO2) on the top of the substrate which behaves as a dielectric. There is
an aluminum plate fitted on the top of this SiO2 dielectric layer.

Most importantly, here, the Source (S) terminal is placed over the Drain (D)
terminal forming a vertical structure. As a result, in VDMOS the current flows
beneath the gate area vertically between the source and the drain terminals through
numerous n+ sources conducting in-parallel. As a result, the resistance offered by
the device during its ON state RDS(ON) is much lower than that in the case of
normal MOSFETs which enablethem to handle high currents.

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OPERATION OF MOSFET

When gate circuit voltage is zero, and VDD is present, n- -p- junction is reverse
biased and no current flows from drain to source. When gate terminal is made positive
with respect to source, an electric field is established and electrons form an n channel.
With gate voltage increased, drain current also increases.The length of n channel can be
controlled.
If we apply a positive voltage at gate (G). This will create positive static potential at
the aluminum plate of the capacitor. Due to capacitive action, electrons gets
accumulated just below the dielectric layer Now if we further increase the positive
voltage at the gate terminal, after a certain voltage called threshold voltage, due to the
electrostatic force, covalent bonds of the crystal just below the SiO2 layer start
breaking. Consequently, electron-hole pairs get generated there. By applying the
positive voltage at gate, we can control the drain current.

VI CHARACTERISTICS OF MOSFET

MOSFET can be in any of the in three operating regions viz.,

Fig 1.1.2 Characteristics of MOSFET

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 23]

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Cut-Off Region
Cut-off region is a region in which the MOSFET will be OFF as there will be no
current flow through it. In this region, MOSFET behaves like an open switch and is thus
used when they are required to function as electronic switches.

Ohmic or Linear Region

Ohmic or linear region is a region where in the current IDS increases with
an increase in the value of VDS. When MOSFETs are made to operate in this region,
theycan be used as amplifiers.
Saturation Region
In saturation region, the MOSFETs have their IDS constant inspite of an increase
in VDS and occurs once VDS exceeds the value of pinch-off voltage VP. Under this
condition, the device will act like a closed switch through which a saturated value of
IDS flows. As a result, this operating region is chosen whenever MOSFETs are required
to perform switching operations.
From the transfer characteristics (drain-to-source current IDS versus gate-to-
source voltage VGS), it is evident that the current through the device will be zero until
the VGS exceeds the value of threshold voltage VT. This is because under this state, the
device will be void of channel which will be connecting the drain and the source
terminals. Under this condition, even an increase in VDS will result in no current flow as
indicated by the corresponding output characteristics (IDS versus VDS). As a result this
state represents nothing but the cut-off region of MOSFET’s operation.
Next, once VGS crosses VT, the current through the device increases with an
increase in IDS initially (Ohmic region) and then saturates to a value as determined
by the VGS (saturation region of operation) i.e. as VGS increases, even the saturation
current flowing through the device also increases. This is evident by Figure 1b where
IDSS2 is greater than IDSS1 as VGS2> VGS1, IDSS3 is greater than IDSS2 as VGS3 > VGS2,
so on and so forth. Further, Figure 1b also shows the locus of pinch-off voltage (black
discontinuous curve), from which VP is seen to increase with an increase in VGS.

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SWITCHING CHARACTERISTICS OF POWER MOSFET

The switching characteristics or the turn-on & turn-off times of the MOSFET are
decidedby its internal capacitance and the internal impedance of the gate drive circuit.
Turn on time is defined as the sum of turn on delay time and rise time of the device.
Turn off time is the sum of turn off delay time and fall time

Turn ON Process:
A positive voltage is applied to the gate of MOSFET to turn e it on. When the gate
voltage is applied, the gate to source capacitance CGS starts charging. When the
voltage across CGS reached certain voltage level called Threshold voltage(VGST), the
drain current ID starts rising.The time required to charge CGS to the threshold
voltage level is known as turn on delay time (td).The time required for charging CGS
from threshold voltage to full gate voltage (VGSP). is called rise time (tr).During this
period, the drain current rises to its full value, ie ID.Thus the MOSFET is fully turned ON.
The total turn-on time of MOSFET is
TON = tdon+ tr

The turn-on time can be reduced by using low-impedance gate drive source.
Turn OFF Process:
• To turn off the MOSFET, the gate voltage is made negative or zero.

• Due to this, the gate to source voltage then reduces from VI to VGSP.

• As MOSFET is a majority carrier device, turn-off process is initiated soon

after removal of gate voltage at time t1.
• That is, CGS discharges from gate voltage V1 to VGSP. The time

required for thisdischarge is called turn-off delay time (td(off) )

• During this period, the drain current also starts reducing.

• The CGS keeps on discharging and its voltage becomes equal to

threshold voltage(VGST).

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• The time required to discharge CGS from VGSP to VGST is called fall time

(tf). The drain current becomes zero when VGS < VGST. The MOSFET is
then said to be have turned-off.

• Thus the total turn-off time of MOSFET is TOFF = t(d(off)) + tf

•

Fig.1.1.3 turn on and off characteristics of MOSFET

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 23]

Applications of POWER MOSFET

Power MOSEFET technology is applicable to many types of circuit.

1. Linear power supplies

2. Switching power supplies

3. DC-DC converters

4. Low voltage motor control

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1.2 Introduction to Snubber and Driver Circuits

A snubber circuit limits or stops (snubs) switching voltage amplitude

and its rate of rise, therefore reducing power dissipation. In its simplest form,
a snubber circuit basically consists of a resistor and capacitor connected
across the thyristor.

MOSFET DRIVE CIRCUIT

A driver circuit need to turn on the semiconducting devices. A MOSFET

usually needs a gate driver to do the on/off operation at the desired
frequency. For high frequencies, MOSFETs require a gate drive circuit to
translate the on/off signals from an analog or digital controller into the
power signals necessary to control the MOSFET. Since the MOSFET is a
voltage-driven device, no DC current flows into the gate.In order to turn on
a MOSFET, a voltage higher than the rated gate threshold voltage Vth must
be applied to the gate. While in a steady on or off state, the MOSFET gate
drive basically consumes no power. The gate-source capacitance of a
MOSFET seen by the driver output varies with its internal state.MOSFETs are
often used as switching devices at frequencies ranging from several kHz to
more than several hundreds of kHz. The low power consumption needed for
gate drive is an advantage of a MOSFET as a switching device. MOSFETs
designed for low-voltage drive are alsoavailable.
The basic requirements for a MOSFET drive circuit include an ability
to apply a voltage sufficiently higher than Vth to the gate and a drive
capability to sufficiently charge the input capacitance. This section describes

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an example of a drive circuit for an N-channel MOSFET.

The below figure shows a basic MOSFET drive circuit. In practice, the
capacitance of a MOSFET to be driven and its usage conditions must be
considered in designing a drive circuit.

Figure 1.2.1 MOSFET drive circuit

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 23]

There is a growing need for MOSFETs for switching applications (load

switches) to provide a conducting path in a circuit only when it is operated,
and thereby reduce the power consumption of electronic devices. At
present, MOSFETs are directly driven by a logic circuit or a microcontroller in
many applications. Figure 2.2 shows an example of a circuit for turning on and
off a power relay. Since turn-on and turn-off times may be as slow as a few
seconds for load switches, the MOSFET gate can be driven with a small
current.There are other ways of triggering MOSFET are using a high-voltage
device and a bootstrap circuit, Pulse transformer drive (insulated switching)

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,using a photo coupler and a floating power supply.

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1.3 Switched Mode Regulators - BUCK REGULATOR

Switched Mode Regulators provide much greater power efficiency in

DC-to-DC conversion than linear regulators, which are simpler circuits that
lower voltages by dissipating power as heat, but do not step up output
current. Switched mode regulators consists of energy storage elements
along with dc-dc chopper circuits.To reduce voltage ripple, filters made of
capacitors (or capacitors in combination with inductors) are normally added
to such a converter's output (load-side filter)and input (supply-side filter.

Switched Mode Regulators are classified into Buck,Boost ,Buck-Boost

Regulators.

BUCK REGULATOR
A buck converter (step-down converter) is a DC-to-DC power converter
which steps down voltage while stepping up current from its input
(supply) to its output (load).

Figure 1.3.1 BUCK REGULATOR

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 492]

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MODE I: SWITCH IS ON, DIODE IS OFF

The voltage across the capacitance in steady state is equal to the

output voltage. The switch is on for a time TON and is off for a time TOFF. We

define the time period, T, as T=Ton+Toff, and the switching frequency,

f= 1/T = chopping frequency

Figure 1.3.2 Buck converter- Mode II circuit diagram

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 492]

MODE II: SWITCH IS OFF, DIODE IS ON

Here, the energy stored in the inductor is released and is ultimately

dissipated inthe load resistance, and this helps to maintain the flow of

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current through the load. But for analysis we keep the original conventions
to analyse the circuit using KVL.

Figure 1.3.3 Buck converter- Mode II circuit diagram

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 493]

Average load Voltage is given by

V0 = Ton/ (Ton +Toff) * Vs = (Ton/T) V = D Vs

Ton : on -time Toff : off- time

Thus the load voltage can be controlled by varying the duty cycle D

V0 = f. Ton .Vs

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Figure 1.3.4 Buck converter Output Voltage and Current Waveforms

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 493]

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1.4 BOOST CONVERTER

Boost converter which increases the input DC voltage to a specified DC

output voltage. A typical Boost converter is shown below.

Step-up chopper works as a step-up transformer on DC current.

The working principle of a step up chopper can be explained from the

above diagram. In the circuit, a large inductor L is connected in series to
the supply voltage. Capacitor maintains the continuous output voltage to
the load. The diode prevents the flow of current from load to source.

Figure 1.4.1 Block diagram of Boost converter

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 279]

The input voltage source is connected to an inductor. The solid-state

device which operates as a switch is connected across the source. The
second switch used is a diode. The diode is connected to a capacitor, and
the load and the two are connected in parallel as shown in the figure
above.

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The inductor connected to input source leads to a constant input

current, and thus the Boost converter is seen as the constant current
input source. And the load can be seen as a constant voltage source. The
controlled switch is turned on and off by using Pulse Width
Modulation(PWM). PWM can be time-based or frequency based.
Frequency-based modulation has disadvantages like a wide range of
frequencies to achieve the desired control of the switch which in turn will
give the desired output voltage. Time-based Modulation is mostly used
for DC-DC converters. It is simple to construct and use. The frequency
remains constant in this type of PWM modulation.

The Boost converter has two modes of operation.

The first mode is when the switch is on and conducting.

MODE I : SWITCH IS ON, DIODE IS OFF

Figure 1.4.2 Boost converter- Mode I circuit diagram

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 280]

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The Switch is ON and therefore represents a short circuit ideally

offering zero resistance to the flow of current so when the switch is
ON all the current will flow through the switch and back to the DC
input source. Let us say the switch is on for a time TON and is off for a

time TOFF. We define the time period, T, as T=Ton + Toff.

When the chopper is turned ON the current through the inductance

L will increase from I1 to I2. As the chopper is on the source voltage
is applied to L that is vL = VS .

MODE II : SWITCH IS OFF, DIODE IS ON

Figure 1.4.3 Boost converter- Mode II circuit diagram

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 280]

When the chopper is OFF, the KVL can be

written as vL – V0+Vs =0 or vL =V0 –Vs

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where vL is the voltage across L. Variation of source voltage vS , source

current IS , load voltage v0 and load current iO is sketched in the fig .

Let us assume that the variation of output current is linear, the energy
input to inductor from the source, during the time period Ton , is

Win= Vs (I1+I2/2) Ton

During the time Toff the chopper is off, so the energy released by

the inductor to the load is

Woff = (V0-Vs)(I1+I2/2).Toff

Let us assume that the system is lossless, then the two energies
say Win and Woff are equal.

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Figure 1.4.4 Boost converter Waveforms

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 281]

Boost converter Output Voltage

So equating these two we will get

Vs (I1+I2/2) Ton = (V0-Vs)(I1+I2/2).Toff

Vs Ton = (V0-Vs) Toff

V0Toff = Vs (Toff + Ton) = Vs .T

V0 = VS (T/Toff) = VS (T/T-Ton) =VS (1/(1-D)

From the above equation , we can see that the average voltage across the
load can be stepped up by varying the duty cycle.

We know that D varies between 0 and 1. But as we can see from the
equation above that if D = 1 then the ratio of output voltage to input voltage
at steady state goes to infinity.

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1.5 BUCK - BOOST CONVERTER

Buck Boost converter which can operate as a DC-DC Step-Down

converter or a DC-DC Step-Up converter depending upon the duty cycle.

A typical Buck-Boost converter is shown below

Figure 1.5.1 Buck- Boost converter circuit diagram

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 282]

The input voltage source is connected to a solid state device. The second
switch used is a diode. The diode is connected, in reverse to the direction of
power flow from source, to a capacitor and the load and the two are
connected in parallel as shown in the figure above.

The controlled switch is turned on and off by using Pulse Width

Modulation (PWM). PWM can be time based or frequency based.
Frequency based modulation has disadvantages like a wide range of
frequencies to achieve the desired control of the switch which in turn will
give the desired output voltage. Time based Modulation is mostly used for
DC-DC converters. It is simple to construct and use. The frequency remains
constant in this type of PWM modulation.
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The Buck Boost converter has two modes of operation.

MODE I : SWITCH IS ON, DIODE IS OFF

Figure 1.5.2 Buck- Boost converter- Mode I circuit

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 283]

The Switch is ON and therefore represents a short circuit ideally offering

zero resistance to the flow of current so when the switch is ON all the
current will flow through the switch and the inductor and back to the
DC input source. The inductor stores charge during the time the switch is
ON and when the solid state switch is OFF the polarity of the Inductor
reverses so that current flows through the load and through the diode
and back to the inductor.

So the direction of current through the inductor remains the same.

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MODE II : SWITCH IS OFF, DIODE IS ON

Figure 1.5.3 Buck- Boost converter- Mode II circuit diagram

[Source: “Power Electronics” by P.S.Bimbra, Khanna Publishers Page: 283]

In this mode the polarity of the inductor is reversed and the energy
stored in the inductor is released and is ultimately dissipated in the
load resistance and this helps to maintain the flow of current in the
same direction through the load and also step-up the output voltage as
the inductor is now also acting as a source in conjunction with the input
source.

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