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Exercises HW3-1

The document contains 10 practice problems about semiconductor physics and p-n junction diodes. The problems cover topics like calculating current under forward and reverse bias, minority carrier lifetime, built-in potential, depletion width, and capacitance. Semiconductor materials discussed include silicon and gallium arsenide.

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114 views2 pages

Exercises HW3-1

The document contains 10 practice problems about semiconductor physics and p-n junction diodes. The problems cover topics like calculating current under forward and reverse bias, minority carrier lifetime, built-in potential, depletion width, and capacitance. Semiconductor materials discussed include silicon and gallium arsenide.

Uploaded by

dunglh.bi12-108
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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University of Science and Technology of Hanoi (USTH)

Advanced Materials Science and Nanotechnology (AMSN)


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B2 - Semiconductors_HW3

1, At room temperature under the forward bias of 0.15 V the current through a p-n
junction is 1.66 mA. What will be the current through the junction under reverse bias?

2, For a p+-n Si junction the reverse current at room temperature is 0.9 nA/cm2.
Calculate the minority-carrier lifetime if Nd = 1015 cm-3, ni = 1.05 × 1010 cm-3, and
µp = 450 cm2 V-1 s-1.

3, Calculate the built-in potential barrier in a silicon pn junction at T = 300K for Na =


5x1017 cm-3, Nd = 2x1016 cm-3 and ni = 1.5x1010 cm-3?

4, Consider the uniformly doped GaAs junction at T = 300K. At zero bias only 20% of the
total space charge is to be in the p-region. The built-in potential barrier is Vbi = 1.2 Volts.
Determine Na, Nd, xa, xp, and |Emax|.

5, Calculate the applied reverse bias voltage at which the ideal reverse current in a pn
junction diode at T = 300K reaches 90% of its reverse saturation current value?

6, For the energy band diagram below:


a) Is the potential at x = 0 more or less positive than the potential at x = L? Explain your
answer?
b) What is the magnitude of the built-in potential?

7, For a silicon one-sided abrupt junction with Na = 2x1019 cm-3 and Nd = 8x1015 cm-3, calculate
the junction capacitance at zero bias and reversed bias of 4 V (T = 300 K).
(Si = 11.9, 0 = 8.85x10-12 (Fm-1))
8, This problem concerns a p-n junction doped Na = 2x1018 cm-3 on the p-side and Nd = 3x1017
cm-3 on the n-side.
a, There is a built-in potential for this pn junction. Which side is more positive, the p-side or
the n-side. Explain your answer?
b, Assume that the pn junction is made of silicon. What is the magnitude of the
built-in potential? You may assume that Nc = 3.23x1019 cm-3, Nv = 1.83x1019 cm-3 , ni = 1x1010
cm-3, and Eg = 1.125 eV.

9, For an ideal silicon p-n abrupt junction with Na = 1017 cm-3and Nd = 1015 cm-3,
a, Calculate Vbi at 250, 300, 350, 400, 450, and 500 K and plot Vbi versus T?
b, Comment on your result in terms of energy band diagram?
c, Find the depletion layer width and the maximum field at zero bias for T = 300 K?

10, Consider an ideal abrupt heterojunction with a built-in potential of 1.6 V The impurity
concentrations in semiconductor 1 and 2 are 1x1016 donors/cm3 and 3x1019 acceptors/cm3, and
the dielectric constants are 12 and 13, respectively. Find the electrostatic potential and
depletion width in each material at thermal equilibrium?
./.

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