TROOnON TONLST L MOSTKANSTSTOR de,a:A

Advantages of MosFET OVen BJT -

lou Poer dna no (usrLest and (ompa
They ar portable they use

4bfe wth sifton Paocésgtng technolog

) MOsFETS ane tolenasd to heat
n MOSFETS Ane Pauwen aoffitert as the Outpuds ae Cotro[led
by toput vo Hage înstead of Cuunt
Advantages ot
MoyET OVer JFET
TFETs Can ohly be opestadod tn dop letion mode
wheneas MoBFET
Con operated githen depleRan mode and tn enhorement
be tn
Mode
9MOSFETS have hghen fnput tm Ped anco han that of JFET
and leakage Cusmnt in moSFET tS veru Smal aS Compane
to JFET
Name yean Transiston
Numbn
ogic 9ate
SS1/Small SYale \ numbens
nHegnadion) 196 1 to 1o to 1
MST MedTum Scale 968 0to S00 13 to q
tHg nafion

LS1/Large Stale Aq11 S00to d0,000 400-to 909

tegnation
VLSTVeuy lange a0000to 1000000 A0,000to 9949
Scaleoteaton 19 80
ULS2/UHaa
SCale lasye 198
Rntanaton )118 000000twmone 10000d Mbne
Advantages of VLSl
Reduces-the size of the tinuit
-the deces
1) Reduces the ef fecive cogt of
Incaeases the ofenading opeed of tte Ciuuh
19
Reuaed lespaue
Hqhen nelability
v1) OCtupreg a melodtively Smoaller anea.

dit )

2
i 00
A
 Introduction to MOs transiston ond basiC openatons of MasFET
MOSFET tS Commonly known as Mos transslon
>u has fow temiialb
Sounce (s)
9 Gate (G1)
19 Drain()
iv)SubstäadeGs)
Oate3-09.0aa
The drain tenminal
Colleets the Canuers fnom the Souwce torninalu
he CarurieNs tlow-fnom Sourte -to
acth Called channel
daaiM-terumnal hrouah ondueling
The flow of
Canrîens in4the chanel t's Controlled by
aPplyfng
voHage at the thtnd tenmina alled qate of MosteT
he Channe Can be Created ehen
Eohoncement Phystcally Oelectnaally
0-channelAMoSFET
TRie MOSFET is a voHage Cortnolied
Thi's diplens from &JFET hat feld efect tnansiston .

thas ametaloxîde
ade electnode ohth s electnücal tngulate fnom maîn
Semtond ucdon 0-channel by'a voy thtn layen 6f ínsulatfny
PMaterua USuall St0a 8 9
The MOsFET is a semcond uctiaq de,icehîch s uld ely
tu
Used as amprkymg and Sueing electnoni gignal h
electrdnit devtR Sunue (C
(S)

t 0t||
-ChonnT
(-1yPe
Substafe

Stauetino f 0 chonnol MOSAeT

 Functon ofn-channel MoseET

Vqs>o Vos>o
Soun
(S) Dnain
s
n-Cnane
P-tyee
Substdtp
MOSFET.an tunchon 'n two ua
wDeplethon Mode nt
) Enhance ment mode
The funcon of MOSF ET to conHnol he volHage and
Cuent flow in bëtwe on Sotunte an daain.
2 The working
of MOSFET depends on Mos Capacrton,
7he semtnducton Sunlae below the oXtcle oyei
awich isttet to caed tn between Souse and dnax )
ternal ic K0oun Channel
Draio teuminal ofthe MoSFET D s pogitt Ve rth
respect to 4he dtbo '0 tuPe blos anP-type ubs rat
fortm back to-batL Pn juchons Connected by Res`an
f P-type matert a
The P-njunction clo9e to the dnaún
termin is revon
bfased S0 hat only a veniy Smal fLeweue lakagR
Cuwtent Sloog tnNom Dnaîo-o
Souce
Strtucture of N-Channe)
MoSFET
is also Knounak nsulatedqote feT
t consistS of a hgh nesistive p type s dhstnodetwo
blats of
heavily doped n-type motonnal .Th
matenual ae dituse nto the substrakee3oth en
n-ye
ne
unace s Coated ath a
laye ot SiOa
Metal is deposted thnouah the holes ton Souco
daan tenminaly and m etal
on
place is defostteo on 4he
Sufae anea beBueen droun and SouR Ths
meto
Pade funttfon as a
gode

Output chanacerusiU( TDVS

VOS)
FOr Small Vos the dnain Cuert
neoruy tncneose) oh
Vog As VDS s inuues ed 1the daoin POt Sotusatre3
becomes tndepend ent on vg
 Onte db 004 2088
Aren Posrtte gode vo Hae is applied n0grti e chas e tanniog
thihe Substrato(mínoity charae anniegu) âng Htwocd
the poSvtie PlaCe hat Congt ituto* the qcto ince hejo
Cortrtuers (electnons ) Cannot CqOSS heSi0a to -the qole,
the4 actumulate, closo o he sundace of tho subsanro
Minonrty charge Casueng Constitude A0 -type thann
betoee taa nd Soue and os the qode.Sounte
y is mado mone positfe mong electnon are aanocted
intp the Channgl causing the Chan el ress-tance
Ao decneale
A dnainc unrent flous along the Chon nel fn betwcen he
dnoin and Sounre torminala, because the channg eishano
(ochniol ed bys The channel Corducli yty s Said
to be enhanted by the posi ffve ate Sounte vo Hagp
So Hhe deice is knooun a an enhancemert mode Mosff 7,
HCe both he Souce ad Substante -0f he N-MOSFET
Oe Connected
e ncneaje Nos bias
voHage,ly ineo) e)
Ac 4he g de of MOS ET s ingulatod
Atom he channol
Ahene is 00 qate SOusRte eaage Cuuet
Od-the
devie has oxtencby high tnpuf riesist aage.
(i0"a)
 P-channel Eohoncement MOSF¬T

The p-chonnel MosfET has a P-channel negron between

Source and dnain It has a fon terminal devce
body The dran and
Such as 9 ate dnain Sounge
bod
Scuce ane havily doped pt aeg on and-he bod
on Substode ts n-type The flow CsuLent ts due
to positiely changed holes when ue app he nege
cte voHage the electrons Pnesert nden the ox1de
layen ane pushed downwand irto the gubstnadte
cufth a repulsie fonte.The depleton negton Populted
by the bound posife changes which ane ossocioted
Cuth the donon atoms. The negave 9ate voHage
also attrtacs holes hom pt sounce ond dnaîn
negion
nto the Channel regonhen f we
apply
vo Hage a p-ohannd "ts forumed and cunnentdnain-Sounce
sHards
Atowtng
unte(S) cden)

Si0a)
Metal

Chann elegtor

Deplehon loyen
-type substnate
ction ofPchonnel MOSF£T A

SOuhe tGobe D
Ci)
S
Mekd

-channd

Substrade

V-VsO
VoVs
he p-hann MOSfET has a p-channel neon betueen Sonto
0nd drain ha afow teminal device
Guch as ahe,
droin SountR body The dnain and Soue ane heaMly
doped p o egon and the body substrae is n-typo
h e flo of Cunrent s due to yosHvely, Chan9ed
holes when we apply the 0egadtive
qdte vo Hase, the
eecknons pngents nden the Oxlde
layen ane Puohed
Gounuand tnto the Substrote h a nepulsve tngo
he deplekon neaton oRulgted by Ahe oound
posifive
ChonayeS whih ane aUsocdaded wth the donon atomu
The negcdtive R g0de Voltege abo, chract es
hble om Sounde and dnaio Feo tto m
Chaane negion hen pogtive vdlae
aPPy dnoin-Sounce yolHage a p-thamel is torm
Ond Cuwent Slads flowin q4
Chostactorustics of MOSFET
nput Chanactenustid
y Vns M channel Enhancemert)

mA)

Teshold osVots)
voHage
Octput Chanaeterustes
Vs VDs(D-Channel Enhancererd)

Sodunaficn tns t+VV

s t6V

Vs-tSv
Vngg t
ng tgv

Vvole
Fort Smatu vog the draun CuUent linear irureer twrh Vos AS
tnneaed the dnain onrert SaturatesSbecomes dePend ent on Vos
 Symbol of N-Channelond P-channe

Suge
(SS) Sunae
SOu sS)

Onadte
G) SOuR
qotto)
n-Chamel
P-Chann
ComplemeHay MOSFET ¢-MOS)
tis alo Knóuwn a
Complemertasu MOSF£T
nput resistame Ri is o .
Conssts of MOS and NMOS
toil not Consume any Powern on Pouwen dtsi Pakton tso
Majon apptication t's a inverds Qot qate) .

- VnsP

S
SS
PChann he P
Pull-u
19P - Output

osiPuu- doun
N
N SS
G
-Chan ne)
Substradte ty
C-MOS
connecHed alwaug So cR
CMOS as inverden Equcdions ot MOSFET '-
t consiets of an enhancemort tyPe n-mos and enhanMement N-Channel Enhosntement MO
yee p-MOS Operading in omplemerdany moder wtth Ltneot 5
10Pud Votage appfed to the qate tenhin al of bolh
hetrangistoa CondttoO VoS n Vas-
2Fon h îgh tnput the n mos transiston go as drú entuhth Eauodion-D.o Ko d
Puis down -tho o/p mode uith PMos a as oad Sousadon
-Fon loo tnpus, MOS tran tston acB as dräven which Condftion 9s >VonsO
s-
Equakn
|Puus u the o mode uolhtle nmos ac ag load
Kn kn x
ha the advontage hat teody stete ouen d 9ipekom
s neat gibe Kn nCox
whene Cox= Capac
- Mob
Nos NOS? = wdh
P-mos L Len
Voud VOS O untt of Kn= Am
Vin-Voso
Cox= F
NiRo
mos
P-Chanoel Eoho
input 1 Nas, 5
ogn toput0V
Lnean
,pVS.p VS, Va VoS
S-5
Conatton,
S 0 0-S5
- SV
O, SV
O4F) ON ON) Couakion
Equadions of MOSFET'

N-Channe £nhantemet MOSFET

m
Lineost o
Condton VDS n Vgg n -VTO
TO
Equaton Dn koa
Vas.nT.n) Vosn"9s.o
Sockusutfon
Condftton 9 V a s ) -VT.
AVGsn NTn)
Tn)
Kn kn x
Kn AgCox
wherne Cox= Capacîtance of oxide/0xfde
M= Mobilty of electron
capacstance
w= twidth f chonnel
L Length of chome
Unit of kn =Amp/volt*
Mn= Cm/ voH second
Cox fard/cm
= unitless
Dode-ao 10 a06a
P-chagnel £ohantemert MOgfET
|L'oean
CondrtoN
VsP VasV1
fquetion
ox ox
waasPVTe)Vps.p- Vose
aL
Saturtakidn
Cond4bn
Vs.p4is ,p NTR
YT
uation

1- pCox (VaspVTP)
Fobrucation
Falbrication is he mocCeSS of makxing Something fnom Semi
ini'shed on rtomoteriols ather-than from reody made
CormponentsS
Mos fabtatio) process

Create n-wl tegtons

and channel.Stop règion
FiO el Oxrde and
ade Oatde thino xide

Deposit ond patertn

Polysfiiton layen
Tmpland ounce and
dain naions.substhate
Cotacts

CSeate Contact Cuindouus

| depostt and patter)
metalouyen
7tach Pnocesgfng gtep tn tobfucd?on ra urne that certtalo
Orca and desthed tn chp by Oppropruate mos The
bregrated cintut may be vewed ds a t ot pato
-End Aayers of doped S(o0 1Poly silf con m etal
ano
tnsulatnq silîcon diDtde A Layen must be fetfen
ned before he next tayen of matennal s
 chip The paoOSS usedtetranster
a pottn
aPPlned on the

to a lauen on the ChPs Called rthonaphy

Lfthography
he procesS u sed to tnansfen a potterun to a layen 0n the

Chip is cCalled thography. OPHal R mdsk

Photormesist°
i s a aht Sensite and acid negistant Substance.
4 is divided toto tupo type
Positte Phototesist
| Hs tntHally tnsoluble or Hand and becomeg Soluble
Or Soft oth the aprftation of uvlight
Neqatve
K
Photonesst
t i's tnttally Soluble on Sopt and becomegtn soluble
Oc handwth the applcatfon of Uvtght
tabru cotim of n-MOSPET EnhancesMiert
Step-1L
Prtocessing ts Corsueod on a single Cruystal stfcon of
hgh pukty on ohfch rreuided mpuntfes en
added Such wafen ase about 18-to lsO mm n

dtamcten and 0«mm thitond 4they ae doped

Coth travalent
oimPunty op Bonon and
1npurtty Concentrtadkfon of1d/c0to 10 /c
 JakeaA 10 2006

te
AHayen bf sihton dioxido (sioa)typrally Lium hitk is 9ioco
aJl over the Surfoce of 4he cwofen to pnoteet he Sunfaco
acAs Qs d banuen to -he opart duning pro ceasthg
nd Provides a genenally tnsulattng Substrate on to
wnch cthen layens may bedepo'sited and parttenred

tnsulador si substade
-type

Step:3
The Surface is now Covened w th the photo resist
cokch i's depostted to -he wofer and sp?tp -to
an een digtrübuion of Ahe neauined hCKNess
Proto

Siogonse
)
Si-Substrate

Stppe u
he Photoresist tauer is the exposed to utrav folet
g t thaoug maakng cwhich delnes those rions
indo tohîch diffusion îs tor taxe place -together
 fon example,Ahat
Corth transiston chann els. Assume
adtattonS ane Pplymertzedl
hose aneas exposed to uv
ton dffuson
aneas regun
andened), but that he.
riemain uofeoted
Shrelded by the mask ond

oPHcal Mask
V77TEZZZITT7A,
Photongist
ve) 9 substrate

Hene we ane using negaie Photo rnesist

Step;5
Mmm
hese aneas ane subseajuestlu, readily etched acwai
toqethen with the tndenlunng Sflicor dîoxide Co that
|4he wafer Suface exposed to he, window defhned
b the maJk

UV Rqht

Handened
Photonesy4

Sioonde) Si-Substnate
 A
st substnote

(b)
ep:6 Dode 8 10 20a

t toxeaq-the formatfon of thiKOxide la1yen the

Jnfate îs Covered ith a 1hin high polity oxde
yen which (uill form he gocte oxide of the MaSFT
OXde

ONide
Si-Suhstnade

S-Subcthote
 Stept
ep oxîde n
On the toP of 4hîn oxlde toyen a polyslitans, ayen 's deposted The thin
n mog e+hed aca
Polysiicon is used fon Dth gote olectrodë
trtansiston. ndopPed Polysiifcon has hon osistivtY an Surface o
he esistvity of polysîlicon Can bo reduced b doPPin8 Oseforune.
Polysilcon
Thio
oxie

(oaide)
st-substrako

twth mpunuty adomsS

Crep,1.0
Step 8
AHern Oxi dad
Aten depogttion he polystlî con layens paterned and
the etire
tche to fom he înterconnes and he Mog
tnansiston g ate.A ConcentrLodt
ditfusion om

Polysilicom
Thhox
Sagondo
(oxide)
ST-substnatp
Step
The hin oxîded not covened by Polystifcon also
etched a0O0 hî ch expoges he
O banP STiCo)
Sutace o whtch S ouAce an dnaio
Ose fomed
Junction

Si-Substrate

Grep:10
Aften oxidadfon, Photone sist, etchîng Pnocess -then
he ette cilton Sunface is dopped wth a
hi oh
ConcentrLodon of -type impunt ehon Ahnough
diftusion on ton implantadto)
Poliion

SagovdaL

S-substnadte
 osudatiu
OXtde
Above fiaune shous tha the coppng pone-trokes he
(oide)
exposed areas 0n silicoO Swface, udtimately CTRodt ng si-
two ntyee regons (source and drasn) in P-type
Substtuote Polysilicon qate twhich s Pattened Step 13
belone dopping olenes he pnecige Locodfon of
The sunface S ConverE
Channe Tegion and C hence thelo Cafon of wtll Cortm the otno
Sounce and ran gto Mela

Sel aligemerd proces

oxtde)

he polysilf ton uoth underdligned thin oxide and

hiexide actS a a mask dunin9 dffuso
Step 11
nSudgding.
Step:14
oxioe
Ftnallthe meta
4
TtH he tAenConnec
oxide)
S Sutrate Mekol
Contect

oncehe soure and dnaîn regons Oe form he enttre Sio

Sutface is (Oxide)
agaio Covere Cth an insulodtng laye
sioa
Step-1a
V

The tnsulating layeri s again Pattertuned to novide

Cotact windouas -fon droin ond Soue SunRn
 nsuluio
oxide
Sio
(Oxido)
si-substngde

Stop,13
The Suntoce îs Converod ith evaporged,ausinium whiCh
ortm the toten (onnece
Mela

Lat

Si- sub strate

Step:1
Finallyhe metad layen s paterned ond eched ompihng
the tten(onnectonthe Mog tnansiston on the Surniaco

MeAa
Conhge

S
(Oide) nt
S- Subgtnade
 Dode 1:10 308
toceSS Step':SPhoto resist
Fabru cation of C- MOSFET by usin9we
A pant of Photo -
Step 1
is taken. wafer t h baare e
L n i a s t Step P-type substrat e

Ahotone
P-Substrate
Step
A hicK Oxide layen(Sto) ts {onmed on he P-type Substnoe
Oxde lauyen Step6(REmoval o
P-Substhodre
Thestoa oxîdad
Step3 made b emoN
aid (HE
A Photoresist layen appted on oxtdo layen
P hoto nesist Photo
neist

P-Substrate
Step
Step4 (RemovNa
0ptical masK
The etttne ph
Photonesist
tn heaus
P-Substrate
SO-
Photonesist is exposed to uv rau hrou n
mask Herte positive pohoto recist is used
tep':5 Photo nesist nemoval)
A part of Photo resist s nemoved by troating the
afon wth basicon acidic solutton

Arotongit Owaetayer

P-Substnate

Step6/Removal of stog wing aud Soludton)

m

The sio oxidadion layen îc removed to -the dpon anaa

made by nemoval of Photonesist ustng Hydnoflounc

eiS

P-Substnate

Op4(Removal of Photoresist)
The entine photo resist layer ts Stripped off as Shou
t he quse

P-Substradte