16 TRIEHUVAN IJNIVERSITY *.

. INSTITUTE OF ENGINEERING Level - i BE

-gl.ln:- i Full Marla i 80
Examination Control Division Programme i BEx, BcT, eeL i Pass Marks | 32
2075 Ashwin Year/Part III/I Time i 3 hrs.

Sublect: - Elecronic Devices and Circuits (EX501)

Candidates are required to give their answers in their own rvords as far as practicable.
Aftempt AII gucstions.
The Jigures in the twgin indicate Fall Marks.
Assame suit&le &ta if necessary.

1. Derive the expression for dpamic resistance of pn junction diode. t5I

2. Determine &e cunred Io and the diode voltage Vp with Voo=5 V and R= lKQ. Assume
that the dirt'e has a cunent of I mA at a voltage of A.7 V and that its voltage drop
changes by Ol V frrevery decade change in currenl tsl

+
Vp

3. Design voirage divi&r biased common emitter BJT amplifier to get voltage gain of -90.
Assume p: I00dVcc=*12V. t8l

4. Derive inpnt impefuree, output impedance and voltage gain of cornmon collector BJT
amplifier t8l
5. Explain the wrrstruction and operation of E MOSFET with eharacteristics curve and
mathematical e:rpression. t71
6. Derive mathmatical definition of JEFET transconductance. t41

7. Find Ieq and Vpsq ftom the following circuit. Show Q point graphically. [5+3]

3ko

VCS (Tll; = 5Y
Ip(on) = 3mA
VGS (on) = 10V
t*
8. Derive general effrciency of class B arnplifier. t5I
9. Draw the circuit diagrarn of Darlington complementmy-symmety class AB amplifier
using diodes. t3l
' 10. Derive manimum efficiency of nans.former coupled class A.gmplifier. t5l
11. Draw astable multivibrator circuit using IC 555 and derive expression for frequency of
oscillation. t6l
12. Exptain working principle of RC phase shift oscillator with necessary expressioas and
circuitdiagraur. t6I
13. Explaia the operation of voltage regulator using band gap voltage reference. t6l
14. Design a (5-15)V variable dc voltage regulator using LM 317 IC. t4l
t**
 16 TRIBHUVANUNTVERSITY
INSTITUTE OF ENGINEERING
Examination Control Division
2074 Chaitra Year/Part iII/I

Subject: - Electronic Devices and Circuits (EX50l)

Candidates are required to give their answers in their own words as far as practicable.
Anempt AII questions.
Thefigures in the margin indicate Full Marks.
Assume suitable data if necessary.

The leakage current of a silicon diode is Is : 10-e A at 25"C, and the emission coefficient
is tl : 1.6. The operating junction temperature ir t:60oC. Determine (i) the leakage
current Is and (ii) the diode current Io at Vo:0.8 V. 14]

2. The 6.8V zener diode is specified to have Vz : 6.8 Y at lz: 5 rnA, q: 20 ft and
I,x:0.2 mA. The supply Voltage V" is nominally 10 V but can vary by t 1V. Find Vo
with no load and with V- at its nominal value. Find the change in V0 resulting &om
connecting a load resistance Rr that draws a current Il : I mA. What is the minimum
value of Rs for which the diode still operates in the breakdown region? [2+2+2)
o.s x JL

+
vo

=
3. Determine the input resistance, output resistanoe and overall voltage gain of the circuit
given below: l8l
vcc
+I0 V

&
4.? kO

lOgF
t<L'
l0pl.- P=1so
47 kJl
Rer
4?0(l

REz
4-J$A

4. Find terminal currents of BJT using Ebers-Moll Model. Write applications of different
BJT configuratiorls. [5+3]
5. Explain the construction and operation of D-MOSFET with characteristics curve and
mathematical expression. l8l
 .
parameters Inss : 12 mA
6. Find the DC operating point af JFET ckcuit given below' Given
? andVp: -4V. t8l

voo=8v

7. Derivena:rimum efficiency of series fed class A amplifier' t6l

8. Dedvebandwidth of tuned amplifier- Write its applications' t6l

and a power supply of
9. For a class B amplifier providing a 14V peak signal t9 16- O P{
V"" = 24V, determine input power, output power-and circuit effi.ciency. t4l
for
10. Draw voltage controlled oscillator cireuit using IC 555 and derive expression
frequency of oscillation. t6l

11. Draw the circuit diagram of half wave precision rectifier and explain the operation. t4l

12. Define noltage regulator- Explain the series voltage regulator

with current- limiting
element. [1+s]

13, Explain working principle of WIEN BRIDGE oscillator with necessary expressions and
t61
circuitdiagram. 'o
 TRIBHUVAN UNIVERSITY
INSTITUTE OF ENGINEERING
Exainination Control Division
2074 Ashwin

Subject: - Electronic Device and Circuits (EX50t)

Candidates are required to give their answers in their own words as far as practicable.
Attempt AII questions.
Thefigures in the margin indicate FulI Marks.
Scientffic Cslculator is allowed.
Assume suitable data if necessary.

l. Explain the small signal model of PN junction diode and dri'r,e its dynamic resistance. [2+4]
2. Determine the range of values of Vi that will maintain the Zener diode of figure below in
ON state. l5l

Y7=20Y Rr-: 1.2 K

I2y = 60 mA

Design p independent typ€ DC biased cornmon emitter amplifier with emitter resistance
bypassed and find its voltage gain and input resistance. Given parameters yn:24,
Ig = 2 rnA, p = 90. Use appropriate guideline to have high input resistance. tS]
+. Describe in brief the operation of BJT as a switch in cut offand saturation regon.
t6l
5. Define lransconductance (g.). Derive g* for BJT. [1+3]
6. Explain the construction and operation of N channel enhancement gpe MOSFET with the
help ofdrain characteristics and transfer characteristics. ig]
7. Find the drain current (Ip) and drain to source (Vos) for the follou.ing circuit.
^voltage
Given parameters are: Vt = 1 V and k = 0.5mA/V2.
t6]
Voo=10 V

Rr= lOMO

Ru= 10 Mfl
T

8. State the difference betrveen BJT and FET. I2l

9. What is crossover distortion? Explain how it can be etiminated with necessary diagram. [2+41
10. Draw the circuit diagram of tuned amplifier and derive the expression for the 3dB
bandwidth of rhe amplifier. t6]
ll' Define Bmkhausen criteria for sinusoidal oscillation. Draw the circuit diagram of wien
oscillation.
bridge oscillator and determine its frequency of
t2+6J
diagram.
12. Describe Colpitt's oscillator with nesessaxy circuit
t5t
13. Draw the standard series DC voltage regulator circuit and find its voltage stability
factor(Sy), 16l
14. Desigrr a3.7 to 9V variable dc voltage regulatorusing lCLM3l7. t4l
*
TRIBHUVAN TINIVERSITY
INSTITUTE OF ENGINEERING
Examination Control Division
20?3 Shrawan

S ubi e et : - Electroni c P_f"-t:g.:$ (EXs01)

-Qg-"".gtl
Candidates are required to give their answers in their own words as far as
practicable.
Attempt All questions.
Thefigures in the margin indicate Full Mark*
Assume suitable data if necessary.

l. Find operating point for the diode circuit graphically using load line method. t4l
\-. 2. : :
Find the zener current form the given circuit if (i) RL 1.2 K O {ii) Rl 3 K f) t4l

R:1KO
Prr'a:80 mW
V": 10 V

3. Determine the irput resistance and output resistance of CC BJT amplifier circuit. Why
common collector configuration is used in amplifier circuit design. 12+2+2+2)

4. Describe the operation of BJT as switch with the help ofNon-gate circuit. l4l
5. Derive expressions to obtain transconductance for BJT, JFET and MOSFET. Also prove
that y":(P+1)Y" t8l

6. The n-channel JFET in the figure below has Ioss

: 18 mA and Vp: -5V. Determine the
values of In and Vos. t8l

.#zov
1.85 KO

7. Describe the working principle of N-channel EMOSFET with the help of its drain
characteristics curve and necessary mathematical expressions. t6I
',1
8. Determine the general efficiency of transformer coupled class B push pull amplifier.
Draw the circuit diagram and itsgraph. 14+41

9. Explain how class AB amplifier eliminates tlre cross over distortion. t3]
10. Draw the circuit diagram of LRC tuned ciass A amplifier and its frequency response
graph and show that Bandwidth = [3+3]
*
11. Explain the operation of AMV using 555 timer IC and derive its frequency of oscillation. t6l
12. Draw the circuit diagram of Hartley oscillator. I3l
factor.
13. Draw standard dcV regulator circuit and find its voltage stability [4+4]
14. Design a DCV regulator for 3.7 V to 12 V output using LM317. t4l
'.*,
26 TRIBHUVAN TJNIVERSITY
80
INSTITUTE OF ENGINEERING
Examination Control Division
2012 Chaitra

Subject: - Eiectronic Devices an{-q-Eg1il s-

FX-l I !
their own words as far as practicable'
candidates are required to give their answers in
Attempt All questions.
Th" fg"r"s in the margih indicste Full Mark*
Assume suitable data if necessary'

it conducts lmA at forward bias

,. In the given circuit, the diode used has its tl = l'74 and
1

t4l
vottasJof 0.? V' Find the current flow in the circuit'
R=500f)

V:10V |ID- -o I

: 6 Y at Tz: 20 mA'
2. Desigpr DC voltage regulator for 6v output. Given data are v,
rzx:2r,'A,pz**:506 mw and 12= l0e. The nominal input voltage is 15v + 30% DC'
Find maximum currsnt can delivers to the
it load' t4]

amplifier and find its current gain

I
Design p independent type dc biased common collector
and input resistance. Given parameterc are: v6g - 20
V, Ic : 2 mA and I : 100' use
l8l
firm biasing method.
CE amplifier and find its
A
Draw the small signal model circuit for capacitor unbypassed
voltage gain and current gain. t8]
JFET with the help of its
5. Describe the construction and working principle of N-channel
drain characteristics curve and necessary mathematical expressions.
t6l

6. For the circuit given below, find Ip and Vps. Also

determine its region of operation and
small signai ac equivalent circuit.
a 13+3+2+27

Vop:10V
R1 10 pf,
Rn
Given data are:
rnA
V1:lV,k:0'5?
R2
10 pA Rs
 class B'push pull amplifier and its
4L L Draw the circuit diagram of transformer coupled
1ji 7. graph prove that maximum efficiency is
#;;;u* "rr-u"T"rirtic
graph. And from
it hasmaximunr loss' [3+3+3+3J
equal to 78.57". Also find the condition when
class A
g. Draw the circuit diagram and its frequency respons? graph of LRC tuned
amplifier. State its r"rinurr"" frequency *a U*a width
(3dB) [1+1+1+l]
g. State Bar}*rausen criteria for sinusoidal oscillator'
Is this principje applicable to RC
frequency of oscillations and the
oscillator *i"g op-a*p? why? If yes, determine the
gain of the amplifier of the circuit'
t2+l+41

10. Exptain the operation of AMV using555 IC and derive its frequency of oscillation' t6l

ll.Describe the bandgap voltage reference source with the help

of a relevant circuit'
Comparebandgapvoltagereferencesourcewithzenerdiode.|4+2]
l2.Dmw the series dc voltage regulator with current limiting element
and explain how it 7
'i5l
works.

[:
 26 TRIBHT'VN.I UMVERSITY Exam. Itcgulrr r
INSTITUTE OF ENGINEERING Level BE Full Marks 80
BEL,BEX,
Examination Control Division Programme
BCT
Pass Marts 32

2069 Chaitra Yeer /Part iln Time 3 hrs.

,Szbjecr; - Electronic Device and Circuits (EX50l) __

{ Candidates are required to give their answers in their own words as far as practicable.
{ AttemptAU qucstions.
{ Tlrcfigures in the margin indicate Fult Marlcs.
{ Asrume suitable data ifnecessry.

.. I' Draw firll wavp hidge rcgifier ciqcuil with 5 ohrn ldp{.resistor connected at its output. If
'i0v,-calculut"
input ac voltage is tn" power dissipaiiori in the load reslstor (Assuhe t:

diodes operate at forward voltage of 0.7V). t4l

2. Explain the small signal model of PN junction and derive the expression for AC or
dynamic resistance. 12+41
3. Draw the ac equivalent circuit for grven circuit and its input and output resistances.
Assume F = 100 forthe BJT. t8l

SVcc: l5V
Rl : 100 KO =5KC)
vr
F: loo
= 20 KCI
Rs= I Kf,)
t

4. Define transconductance (gn).Derive gm for B{/ 12+41

5. Describe in brief the operation of BJT as a switch. t4I
6. Describe with necessary graphs-and expressiofii the principle of operation of N-channel
JFET. t6I
7. The n-channel JEET in the figure below has lp,5s = 18 mA and Vp: -5V. Determine the
values of Io and Vps. t8l
+20v

,JFET

1.65ko
 8. State the difference between BJT and FE& t4I
9. Determine the general efficiency of Transformer Coupled Class-A powerAmplifier.
, t6I
10. Draw the circuit diagram of Complementary-Symmetry plass-AB Amplifier. , '
l2l
1
ll. Calculate the efficiency of transformer coupled push pull Power Amplifier for a supply
volt4ge of 20V and output of (i) Vn = 20V (ii) Vn : 16V. [3+3J
12. Draw Wien Bridge Oscillator circuit and deriveTthe expression for frequencj, of
Oscillation and gain ofthe amplifier circuit. 12+3+31
13.'Draw'standard seiies dc voltage regulator and find its voltage stabilit '
factor (&). t ' ', [6Jt
14. Design a4.2Y to 12 V variable dc voltage regulator ruing IC LM3l7. t4I
15. Draw the circuit diagram of square wave generator. t2I
rtrtt

(
 26 TRIBHUVANI.'NIVERSITY Exam. Ilcgrrlrr
INSTMUTE OF PNcrlrgpR[TTc Level BE Full Marks 80
BEL, BEX,
Examination Control Division Programme BCT Pass Marks 32

2068 Chaitra Year / Part fin Time 3 hrs.

Subiect: - Electronic Devices and Circuit (Ex 5oI)

/ Candidates are required to give their answers in their own words as far as practicable.
-/ Attempt All questions.
/ fnoig*o in the margin indicate Full Marks.
/ Assttme suitable data if necessary.
l. Explain the large signal models of PN junction djode. t4l
2. A diode conducts lmA at 20"C. If it is operated at 100oC, what will be its current? Given
data are: rl=1.8 and negative temperature coefficient value: -1.8mv/"C. t4I
3. For t}re figure shown below with B = 120 find the a) input impedance (b) Output
impedance (c) voltage gain (d) curent gain. Use small signal model. 12+2+2+21
' 20v

470k 2.2,lr
Vo
cr
a
F
Qr

v,
nffi[

.4. Draw ac equivalent circuit of common collector amplifier. Find its input and output
resistances. t2+3+31
5. Describe the physical structr:ral of N-channel JEET and explain its working principle and
characteristics clearly marking the various regions of operation 12+61

6. Derive the expression to obtain the transconductance of E-MOSFET. t4l

7. Find the drain current (Ip) and drain to source voltage (Vns) for the following circuit.
Given parrmeters are: V1: lV and k: 0.5mA/V2. t4l
Vbo= 1o\t

R1= 1O MO Ro= 6 kO'

R2= 10 MO
&=6kO
 -
I

8. Draw the circuit diagrarn of class B push pull amplifier with output tansfbrmer and
explain how push pull action is achieved. Determine the general efficiency of class B
push pull amplifier. [1+3+4]
g. Draw class A tuned amplifier circuit and derive the expression for 3dB bandwidth of the -l
.amplifier. L2+61
10. Deseribe the operation pf IC 555 as square wave oscillator and find its frequency of
oscillation. 16+21 I

11. Estimate voltage stability factor (Sy) for standard series dc voltage reg-ulator using BJT.
,A,lso, explain the operation of overload protection circuit that could be used in series
voltage regulator circuit. [5+3]
12. A class B audio amplifier is providing 20V peak sine wave signal to 8Q speaker with
power supply of 25V (:Vcc). At what efficiency is it operating? t4l -! i

13. Define and explain the reverse bredkdown effect in diodes. t4l
***

-rl I

-! I
I

-r
i

-l

I
 25 TRIBHUVAN UNIVERSITY Exam. Regular / Back

t INSTITUTE OF ENGINEERING
Examination Control Division
Level
Programme
BE
BEL, BEX,
BCT
Full Marks
Pass Marks
80

32
2068 Baishakh Year / Part fill Time 3 hrs.

;-;
,/ Attempt All questions.
./ Thefigures tn the margin indicate Full Marks.
{ Assume suitable data if necessary.
l. Draw graphs of IV characteristics of ordinary PN junction diode and zener diode. Draw
ac equivalent model for PN junction diode and derive its ac resistance. 171
2. Define and explain reverse break down effect. t3l
3. Design B-independent t5pe dc biased common collector amplifier, and find its current
:
gain and input resistance. Given parameters are: Vc.6 :20Y,Is 2mA, P 100 and use :
firm biasing method. t8l
4. Derive an expression to find output resistance for emitter unblpassed common emitter
amplifier circuit. t5l
5. Draw Ebers Moll model and ac equivalent T- model for BJT. t4l
6. Describe the principle of operation of EMOSFET with the help of IV characteristic
curves and algebraic expressions. Also show its ac equivalent circuit model. t7l
7. Find Io and Vp5 for the given circuit. l5l
+25V
- 2.2Kf)
l.5MO
Vp: -4V
Ioss: lOmA
300Kc'
rKo

8. Derive an expression to find the tranconductance for JFET. Izj

g. Draw standard series dc voltage regulator circuit and find its voltage stability factor (S,). t6l
10. Draw a voltage regulator circuit using IC LM317. t3l
1 l. Draw a circuit diagram for Bandgap reference voltage source. t3l
12. Define cross over distortionin class B amplifier. Draw quasi-complementary symmetry
class AB amplifier. And explain how crossover distortion is eliminated in class AB
amplifier. l7)
13. What is the maximum efficiency of class B amplifier? State the condition when it occurs. t4l
la. Why heat sink is necessary in power transistor? Explain with the help of thermal Ohm's
law or thermal resistance method. t4l
15. State Barkhausen criteria and explain the principle of oscillation. t4l
16. Draw Wien Bridge Oscillator circuit and write the expression for frequency of
Oscillation. t6l
17. Draw crystal oscillator circuit. tzl
!N.**
 2I TRIBHUVAN TNIVERSITY Exam. / Back
INSTITUTE OF ENGINEERING Level BE Full Marks 80

Examination Control Division BEL, BCT,

Programme Pass Marks )z
BCT
2057 Mangsir Year / Part ilt Time 3 hrs.

Subject: - Eiectronic Circuits I

'/ Candidates are required to give their answers in their own words as far as practicable.
/ Anempt All questions.
'/ Thefigures in the margin indicate Full Marks.
t / Assume suitable data if necessary.

,!. With the aid of io - v65 cuw€, veriff that the transconductance gm of a MOSFET depends
t upon the dc bias point. t5]
rt Statewhy the resistors and capacitors are minimized in IC fabrication. t5]

_). Explain how the voltage gain of difference amplifier would be larger when a current
L-
mirror is used at the load as compared to using only a simple resistance at the load. t6]
4. Draw emitter follower with.voltage divider and current mirror dc level shifting circuits
L
and which circuit performs better results and why? l2+2+3'i
Find the close loop input impedance of non inverting Op-amp, Derive the expression to
I

i
"y reduce the effect of input offset current in an Op-arnp. [4'3]
k For a non- inverting op-amp R; = lKO, Rr = 20 KO, V63 = tl5volt. The op-amp has a
;ff
slew rate of 0.5V/psec, and a saturation dropout voltage of 10%. Find ma-ximum input
voltage in fuVIS value at 10 KHz sine wave. t6l
i. praw circuit diagram of variable series voltage regulator .vith transistor error amplifier
V circuit and derive its voltage regulation factor, Su. [2+5]
8. pesign a regulator circuit diagram to obtain 16 VDC with input voltage of 25 VDC. i5l
9. Draw a circuit diagram of trausformer coupled class B push pull amplifier clearly. And
determine its ma:<imum efficiency- [3+5]
crossover distortion in push pull amplifier, and state horv you can eliminate it. t6]
^l!"4iscuss
l1.Define Barhausen Criteria for sinusoidal oscillation. Draw a circuit diagram of RC
oscillator and derive its frequency of oscillation t3+1=8.i
if,. Draw the circuit diagram of triangular wave generator. Explain the operation of square
wave generator circuit. [2-4]

I
I
I
r;..i,{;:,;i ':'-
-._- :.i:l
 I
T.
\

'.i
. 2I'. ., TRIBHUVAN UNIVERSIT'{ Exam. Back
TI{$TITUTE OF ENGINEETUNG Level BE Full Marks 80 t

trxairiination Control Division BEL, BEX,

Programme Pass Marks 32
l BCT
2067 Shrawan Year / Part u/II Time 3 hrs

Electronic Circuits I
Can{idates are required to give their answers in their own words as far as practicable.
I
All questions..
Att.empt
,/ Thefigures in the.margin indicate Full Marks.
' ;)/ Assutme suitable data if necessary.
;.., .. ,

i- tistO(it'the advantages of monolithic

;
lC as compared with discrete components. 4

- 2. 'Drarly hybiid-7r model of BJT as a) voltage controlled c.urrent source, b) current controlled current
'
'iource; : . 3+3=6

3. Draw.a simple current mirror and describe its operation. What are the'reasons for the
:outprit current of a simple current mirror not being exactly equal to the reference current? 2+4+4=lO
- t'

4, Discuss the importance of active load and levelshiftine ciicui|-iqffig$t+l=. 5+5=10

5-. Define slew rate of an opJ3ry1p. A 10mV-10 kHz sine*.r; O input to an op-amp with a gain of 1000.
that_is-requiredjor.the-op=arnpjo+mduce=
u,
.Calctlate the minimum <lew rate
l ;--
. . distortion. (Thb sine wave and slew rate are related with the expression'SR=2IlfA) 3+4a7

Eora.linvertirigOp amp, Ri= 1k, Rt= 1Ok,V..= t 15 V. The op amp hasa slew rate of 0.5 V/pS, a i
'satdration dropout voltage of 70%and gain bandwidth product of 1 MHz. Plot the gain and phase
resfltlnse:of.the
. ,! L
circuit, and also show the output waveform when a 5 V peak to peak sine wave of 1
,.
kHz ;
frequency is used as the input to this circuit. 2+2+2=6

Define loading effect in unregulated power supply. Draw a series transistor zener diode voltage
regglator, and state how this problem is taken care of by this circuit. 2+6=8
!
Compare zener diode with bandgap voltage reference. 4

How doeq cross over distoriion occur in class B push pull amplifier? Discuss the change in
9ffe1s of cross over distor:tion when the magnitude of the input signal is reduced, and when the I
freqdency is decreased. What will you do to eliminate cross-over distortion? Discuss the impact
.r of thls remedy in terms of power
.
dissipation. 3+2+2+3+2=L2
,.r'l ,

19. DesiJibE lBarkhausen Criteria'i for oscillation. Wr:ite.down the generalexpression for the
sain.9.l'a f3e{back amplifier, and state the condition for oscillation.
. 5

11. Diaw and explain the operation of CMOS inverter re.laxation oscillator. I
,t {. !t

l
)