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Tut 3

This document contains 5 questions related to laser diodes and LEDs: 1) It asks to calculate the internal quantum efficiency of a gallium arsenide laser given its external quantum efficiency, cavity length, and loss coefficient. 2) It asks about the frequency and wavelength spacing of a gallium arsenide laser diode given its length, refractive index, and spectral width at half power. 3) It asks to calculate the external power efficiency of a gallium arsenide laser diode given its total efficiency, applied voltage, and bandgap energy. 4) It asks to calculate the internal quantum efficiency and internal power level of an indium gallium arsenide LED given its peak

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0% found this document useful (0 votes)
98 views1 page

Tut 3

This document contains 5 questions related to laser diodes and LEDs: 1) It asks to calculate the internal quantum efficiency of a gallium arsenide laser given its external quantum efficiency, cavity length, and loss coefficient. 2) It asks about the frequency and wavelength spacing of a gallium arsenide laser diode given its length, refractive index, and spectral width at half power. 3) It asks to calculate the external power efficiency of a gallium arsenide laser diode given its total efficiency, applied voltage, and bandgap energy. 4) It asks to calculate the internal quantum efficiency and internal power level of an indium gallium arsenide LED given its peak

Uploaded by

Priyanka Jain
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Tutorial 3

ECED, IET Lucknow

Q. 1 A gallium arsenide injection laser with a cavity of length 500 μm has a loss coefficient of 20 cm-1. The
measured differential external quantum efficiency of the device is 45%. Calculate the internal quantum
efficiency of the laser. The refractive index of gallium arsenide is 3.6.

Q.2. For Ga As laser diode, at 850nm has length 300 μm length and refractive index n=3.5.
Determine frequency and wavelength spacing. If at half power point λ-λ0 =5nm, what is
spectral width σ of the gain.

Q.3. Total efficiency of GaAs injection laser is 18%. Voltage applied is 5V and bandgap
energy for GaAs is 1.43eV. Calculate external power efficiency of device.

Q.4. InGaAs LED emitting a peak wavelength of 1310nm has radiative and nonradiative
recombination times of 50 and 100 ns respectively. The drive current is 50mA. Calculate
internal quantum efficiency and internal power level.

Q. 5 The coated mirror reflectivity at either end of the 350 μm long optical cavity of an injection laser is 0.5
and 0.65. At normal operating temperature the threshold current density for the device is 2  103 A cm− and the
gain factor is 22 103 A cm A− . Estimate the loss coefficient in the optical cavity.

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