Tut 3
Tut 3
Q. 1 A gallium arsenide injection laser with a cavity of length 500 μm has a loss coefficient of 20 cm-1. The
measured differential external quantum efficiency of the device is 45%. Calculate the internal quantum
efficiency of the laser. The refractive index of gallium arsenide is 3.6.
Q.2. For Ga As laser diode, at 850nm has length 300 μm length and refractive index n=3.5.
Determine frequency and wavelength spacing. If at half power point λ-λ0 =5nm, what is
spectral width σ of the gain.
Q.3. Total efficiency of GaAs injection laser is 18%. Voltage applied is 5V and bandgap
energy for GaAs is 1.43eV. Calculate external power efficiency of device.
Q.4. InGaAs LED emitting a peak wavelength of 1310nm has radiative and nonradiative
recombination times of 50 and 100 ns respectively. The drive current is 50mA. Calculate
internal quantum efficiency and internal power level.
Q. 5 The coated mirror reflectivity at either end of the 350 μm long optical cavity of an injection laser is 0.5
and 0.65. At normal operating temperature the threshold current density for the device is 2 103 A cm− and the
gain factor is 22 103 A cm A− . Estimate the loss coefficient in the optical cavity.