AO4466

30V N-Channel MOSFET

General Description Product Summary

The AO4466 uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V)
device is suitable for use as a load switch or in PWM RDS(ON) < 23mΩ (VGS = 10V)
applications. The source leads are separated to allow RDS(ON) < 35mΩ (VGS = 4.5V)
a Kelvin connection to the source, which may be
used to bypass the source inductance. 100% UIS Tested
100% Rg Tested

SOIC-8

Top View Bottom View D

D
D
D
D

G G
S
S
S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 10
Current AF TA=70°C ID 7 A
Pulsed Drain Current B IDM 64
TA=25°C 3.1
PD W
Power Dissipation TA=70°C 2
Avalanche Current B, G IAR 12 A
B, G
Repetitive avalanche energy 0.1mH EAR 7 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 34 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 62 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 18 24 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4466

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30 VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 2.1 2.6 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 64 A
VGS=10V, ID=10A 16.7 23
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 24.3 30
VGS=4.5V, ID=5A 23.7 35 mΩ
gFS Forward Transconductance VDS=5V, ID=10A 17 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 2.4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 298 373 448 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 46 67 88 pF
Crss Reverse Transfer Capacitance 24 41 58 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.6 1.8 2.8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 5.7 7.1 8.6 nC
Qg(4.5V) Total Gate Charge 2.7 3.5 4.2 nC
VGS=10V, VDS=15V, ID=10A
Qgs Gate Source Charge 1.2 nC
Qgd Gate Drain Charge 1.6 nC
tD(on) Turn-On DelayTime 4.3 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.5Ω, 2.8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 15.8 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 8.4 10.5 12.6 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 3.6 4.5 5.4 nC
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 4.7 6.0 7.2 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 5.3 6.6 8 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V
Rev 9: May. 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4466

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 15
10V 6V
50
12 VDS=5V

40
4.5V 9
ID (A)

ID(A)
30
6 125°C
20 VGS=3.5V

10 3
25°C

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

40 1.8
VGS=10V
Normalized On-Resistance

35
VGS=4.5V 1.6

30
Ω)
RDS(ON) (mΩ

1.4 VGS=4.5V
25
1.2
20
VGS=10V
15 1

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

60 1.0E+01
ID=10A
50 1.0E+00

1.0E-01
Ω)
RDS(ON) (mΩ

40 125°C
IS (A)

1.0E-02
125°C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25°C
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04
25°C
10
1.0E-05
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4466

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 600
VDS=15V
ID=10A 500
8
Ciss

Capacitance (pF)
400
VGS (Volts)

6
300
4
200
Coss
2
100
Crss
0 0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
100.0
In descending order
TA=25°C, 100°C, 125°C, 10µs
IA, Peak Avalanche Current (A)

10.0
100µs
ID (Amps)

10.0
RDS(ON)
limited
1.0 1ms
10ms
100ms
TJ(Max)=150°C
DC 1s
TA=25°C
1.0 0.1 10s

1 10 100 1000 0.1 1 10 100

VDS (Volts)
Time in Avalache, tA (ms)
Figure 9: Single Pulse Avalanche Capability Figure 10: Maximum Forward Biased Safe
Operating Area (Note E)

50

TJ(Max)=150°C
40 TA=25°C
Power (W)

30

20

10

0
0.0001 0.01 1 100
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4466

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=75°C/W
Thermal Resistance

0.1
PD
Single Pulse Ton
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4466

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com