This document discusses several topics related to the physics of materials:
1. It examines dielectric relaxation in a material with a double well potential, calculating permittivity for different energy barriers and temperatures.
2. It analyzes the piezoelectric and stiffness tensors of various crystal phases, calculating stresses, strains, and polarizations.
3. It describes inverse permittivity behaviors with temperature and writes Landau expansions to model different phase transitions.
4. It studies an antiferroelectric transition using a free energy expansion in terms of sublattice and total displacement fields, analyzing stability regions as a function of temperature and electric field.
This document discusses several topics related to the physics of materials:
1. It examines dielectric relaxation in a material with a double well potential, calculating permittivity for different energy barriers and temperatures.
2. It analyzes the piezoelectric and stiffness tensors of various crystal phases, calculating stresses, strains, and polarizations.
3. It describes inverse permittivity behaviors with temperature and writes Landau expansions to model different phase transitions.
4. It studies an antiferroelectric transition using a free energy expansion in terms of sublattice and total displacement fields, analyzing stability regions as a function of temperature and electric field.
This document discusses several topics related to the physics of materials:
1. It examines dielectric relaxation in a material with a double well potential, calculating permittivity for different energy barriers and temperatures.
2. It analyzes the piezoelectric and stiffness tensors of various crystal phases, calculating stresses, strains, and polarizations.
3. It describes inverse permittivity behaviors with temperature and writes Landau expansions to model different phase transitions.
4. It studies an antiferroelectric transition using a free energy expansion in terms of sublattice and total displacement fields, analyzing stability regions as a function of temperature and electric field.
This document discusses several topics related to the physics of materials:
1. It examines dielectric relaxation in a material with a double well potential, calculating permittivity for different energy barriers and temperatures.
2. It analyzes the piezoelectric and stiffness tensors of various crystal phases, calculating stresses, strains, and polarizations.
3. It describes inverse permittivity behaviors with temperature and writes Landau expansions to model different phase transitions.
4. It studies an antiferroelectric transition using a free energy expansion in terms of sublattice and total displacement fields, analyzing stability regions as a function of temperature and electric field.
1- Consider a dielectric material with a double well potential indicating the equilibrium positions of a mobile charge 𝑞𝑞. The distance between the two positions is 𝑏𝑏 and the energy barrier between the two potential minima is 𝐸𝐸𝑎𝑎 .
a) Propose reasonable values for 𝑞𝑞, 𝑏𝑏 and the volume occupied by one of this microscopic dipoles and calculate the permittivity of the material at 𝑇𝑇=200 K.
b) Consider that after the application of an external field the material shows a dielectric relaxation with a time 𝜏𝜏 = 𝐸𝐸𝑎𝑎 𝜏𝜏0 𝑒𝑒 𝑘𝑘𝑇𝑇 with 𝜏𝜏0 =10-13 s. Calculate and plot the relaxation function and the corresponding complex permittivity at 200 K if all the microscopic ‘double well dipoles’ have an energy barrier of 𝐸𝐸𝑎𝑎 =0.55 eV. (Use logarithmic time and frequency axis for the plots).
c) Consider that the material contains different types of ‘double well dipoles’: 10% with 𝐸𝐸𝑎𝑎 =0.5 eV, 30% with 𝐸𝐸𝑎𝑎 =0.55 eV and 60% with 𝐸𝐸𝑎𝑎 =0.6 eV. Calculate and plot the relaxation function and the corresponding complex permittivity at 200 K (Use logarithmic time and frequency axis for the plots).
d) Repeat the previous question for 300 K.
2- Consider the following phases, with the indicated piezoelectric and stiffness tensors.
Questions: Explain why phases b) and e) do not show piezoelectricity.
Consider that we apply a deformation with strain 𝑥𝑥 = [0.3𝛿𝛿 0.3𝛿𝛿 −𝛿𝛿 0 0 0] (Voigt notation) with 𝛿𝛿 > 0 with a value of 0.5%. For phases a), b), c) and e) calculate the stresses that we must apply in order to produce such deformation in the absence of electric field. For all phases, calculate the induced polarization due to the applied deformation.
Consider that monocrystalline samples with a size of 1mm in the direction of the [001] crystalline axis. Consider that the samples are clamped (no deformation is allowed). Calculate the stresses generated by the application of 1V between the two extrema of the sample along the [001] direction. 3- Consider the following behaviors of the inverse permittivity as function of temperature.
I) II) III)
Indicate and justify what is the nature of the phase transitions at Tc for each case.
Write down the Landau expansions of free energy that are able to describe such behaviors. For each case, define the sign and temperature dependence of each coefficient. 4- Consider the free energy expansion for the description of an antiferroelectric transition.
Sublattice displacement fields: 𝐷𝐷𝑎𝑎 , 𝐷𝐷𝑏𝑏
Ferroelectric displacement field: 𝐷𝐷𝐹𝐹 = 𝐷𝐷𝑎𝑎 + 𝐷𝐷𝑏𝑏 Antiferroelectric ‘staggered’ displacement field: 𝐷𝐷𝐴𝐴 = 𝐷𝐷𝑎𝑎 − 𝐷𝐷𝑏𝑏 Free energy expansion in terms of sublattice fields:
a) Study the different regions of stability and metastability as a function of temperature and electric field by minimizing the reduced version of 𝐺𝐺 = 𝐺𝐺1 − 𝐸𝐸𝐷𝐷𝐹𝐹 :
