TASK 1 In an LED, most of the recombination process is radiative

Question 1
In Silicon-based semiconductor, most of the recombination process is
non-radiative
When an LED is lit on, current flows in the same direction of the
forward current (forward current: p- to n-type)
When a solar cell is generating power, photocurrent flows in the
opposite direction of the forward current (forward current: p- to n-type)
1a. Refer to the energy band diagram (shown on the left side) and The energy of light coming out of an LED is generally equal to the
choose the correct terms! energy gap of the LED material
Material A is a/an n-type semiconductor. It has free electron as the
majority carrier with a negative charge. It is also categorized The energy of light that is absorbed by a solar cell is generally larger
extrinsic semiconductor and is commonly doped by Phosphorus. than or equal to the energy gap of the LED material

Material B is a/an p-type semiconductor. It free holes as the majority The internal equilibrium efficiency compares the ratio of photons
carrier with a positive charge. It is commonly doped by Boron which generated in p-n junction to electrons flowing into the p-n junction
caused its Fermi energy level shifted close to the valance band. The extraction efficiency compares the ratio of photons coming out of
1b. Refer to the characteristics curve (shown on the right side) and the LED lamp to photons generated in p-n junction
choose the correct terms!
Question 2
The red-line region is known as reverse bias condition. In this situation
Match the processes occurring in solar cell to its correct sequence.
diode's operation is similar to a one-directional opened switch . The
very small reverse current (nA scale) in the red-line region originates The process starts with "Light is incident on the solar cell surface"
from minority carriers .
1st step: electron in the valance band absorbs photon energy
The blue-line region is known as forward bias condition. The forward
current that flows through the diode, as shown in the blue-line region 2nd step: electron breaks the chemical bond and leaves a hole
originates one-directional closed switch. 3rd step: electron moves towards n-area while hole moves to p-area
Question 2 4th step: photocurrent is generated by movement of photo-generated
Refer to the following energy band diagram and choose the correct carriers
terms!

Question 3
Upon the incidence of light, carriers are generated in the p-area, n-area,
and the p-n junction of the semiconductor. Electron is swept in the
semiconductor towards n-area while hole flows in the semiconductor
towards p-area.

a) In an open circuit condition, this causes more negative bias at the n-

side and positive bias at the p side.
A pn-junction can be in several biasing conditions. The condition shown This potential difference is known as Voc: open cicuit voltage
as "Applied bias 1" indicates forward bias condition. Free electrons and The power, P = V.I is not generated in the open circuit condition.
holes can overcome the barrier to flow to a less concentrated area. Free
electrons are flowing to the left hand side while holes are flowing to the b) In a closed circuit condition, electron flow from n-area to the p-area
right hand side of the junction. The current is flowing through the through the circuit.
junction. This current is known as Isc: short circuit current
The direction of Isc is opposite of the forward current direction.
The power, P = V.I is not generated in the closed circuit condition.
The condition shown as "Applied bias 2" indicates thermal equilibrium
condition. Free electrons and holes can not overcome the barrier to flow c) In a general condition with a specified load R, electron flow from n-
to a less concentrated area. The current is not flowing through the area to the p-area through the circuit and a potential difference exists
junction. If one wants to decrease the barrier, the material on the left between the resistor’s terminals.
hand side of the junction needs to be given a higher potential than that The power, P = V.I is generated in this condition
of the right hand side of the junction. If one want to increase the barrier,
the material on the left hand side of the junction needs to be given a Question 4
lower potential than that of the right hand side of the junction. Match the processes occurring in LED to its correct sequence.
The process starts with "The LED is forward biased"
The condition shown as "Applied bias 3" indicates reverse
bias condition. Free electrons and holes can not overcome the barrier to 1st step: energy barrier of the p-n junction is decreased
flow to a less concentrated area. However, minority carriers can flow
due to difference in potential (energy level difference). The current 2nd step: majority carriers flow through the junction (electron from n-
originated from the movement of minority carriers is flowing through to p-area, holes from p- to n-area
the junction. Minority free electrons are flowing from the left hand side
3rd step: majority carriers recombine by releasing photons
of the junction while minority holes are flowing from the right hand side
of the junction. 4th step: photons travel out of the p-n junction to the free space

TASK 2
Question 5
Question 1

In recombination process, electron releases energy to join hole.

In generation process, electron in valence band absorbs energy and
leaves a hole.
A = p-contact, B = n-contact, C = p-semiconductor, D = pn junction,
E = n-semiconductor, F = substrate
Question 6
For the following solar cell I-V curve,
A = 39.4 mA
B = 33.3 mA
C = 0.5 V
D = 0.6 V
Determine the fill factor of this solar cell! (in %, 2 decimals)

For the same input voltage, vi, and circuit with R = 54 kΩ, determine the
maximum current flowing through the diode I1! (in mA, 2 decimals)

Question 7
Determine the maximum Power (Pmax) of this solar cell! (in mW, 2
decimals) For the same input voltage, vi, and circuit with R = 54 kΩ, determine the
maximum current flowing through the resistor R, IR! (in mA, 2
decimals)

Question 8
Choose the appropriate semiconductor to make the following LED:

Blue (λ=430 nm) = GaInN(2.9 eV)

This problem is based on the following input signal and circuit, with R=
Yellow (λ=540 nm) = GaP(2.3 eV) 4.2kΩ and V= 5.4V.

Red (λ=690 nm) = AlGaAs(1.8 eV)

TASK 3
For the following circuit with Si diode.
V1 = 0 V
V2 = 3.2 V a) The transition point for the diode to turn on occurs at Vi < P.
R = 1 kΩ Calculate and determine P! (in V, 2 decimals)
Determine V0! (2 decimals in V)

b) When Vi=16 V, calculate and determine the value of Vo ! (in V, 2

decimals)

c) When Vi=-16 V, calculate and determine the value of Vo ! (in V, 2

decimals)

Determine the current flowing through the resistor IR! (2 decimals in

mA)
d) When Vi=-16 V, calculate and determine the magnitude of current
flowing through the resistor! (in mA, 2 decimals)

For the following input voltage, vi, and the circuit with R = 54 kΩ,
determine the largest magnitude for the output voltage vo! (in V, 2
decimals) The transition point for the diode to turn on occurs at Vi < P. Calculate
and determine P! (in V, 2 decimals)