Si2323DS

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21
Available
0.039 at VGS = - 4.5 V - 4.7
• TrenchFET® Power MOSFET
- 20 0.052 at VGS = - 2.5 V - 4.1
0.068 at VGS = - 1.8 V - 3.5 APPLICATIONS
• Load Switch
• PA Switch

TO-236
(SOT-23)

G 1

3 D

S 2

Top View
Si2323DS (D3)*
* Marking Code

Ordering Information: Si2323DS-T1

Si2323DS-T1-E3 (Lead (Pb)-free)
Si2323DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5s Steady State Unit
Drain-Source Voltage VDS - 20
V
Gate-Source Voltage VGS ±8
TA = 25 °C - 4.7 - 3.7
Continuous Drain Current (TJ = 150 °C)a, b ID
TA = 70 °C - 3.8 - 2.9
A
Pulsed Drain Current IDM - 20
Continuous Source Current (Diode Conduction)a, b IS - 1.0 - 0.6
TA = 25 °C 1.25 0.75
Maximum Power Dissipationa, b PD W
TA = 70 °C 0.8 0.48
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t≤5s 75 100
Maximum Junction-to-Ambienta RthJA
Steady State 120 166 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72024 www.vishay.com

S09-0133-Rev. D, 02-Feb-09 1
Si2323DS
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Limits
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 20
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.40 - 1.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA
VDS = - 16 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 16 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V - 20 A
VGS = - 4.5 V, ID = - 4.7 A 0.031 0.039
Drain-Source On-Resistancea RDS(on) VGS = - 2.5 V, ID = - 4.1 A 0.041 0.052 Ω
VGS = - 1.8 V, ID = - 2.0 A 0.054 0.068
Forward Transconductancea gfs VDS = - 5 V, ID = - 4.7 A 16 S
Diode Forward Voltage VSD IS = - 1.0 A, VGS = 0 V - 0.7 - 1.2 V
b
Dynamic
Total Gate Charge Qg 12.5 19
VDS = - 10 V, VGS = - 4.5 V
Gate-Source Charge Qgs 1.7 nC
ID ≅ - 4.7 A
Gate-Drain Charge Qgd 3.3
Input Capacitance Ciss 1020
Output Capacitance Coss VDS = - 10 V, VGS = 0 V, f = 1 MHz 191 pF
Reverse Transfer Capacitance Crss 140
Switchingc
td(on) 25 40
Turn-On Time VDD = - 10 V, RL = 10 Ω
tr 43 65
ID ≅ - 1.0 A, VGEN = - 4.5 V ns
td(off) 71 110
Turn-Off Time RG = 6 Ω
tf 48 75
Notes:
a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 72024

2 S09-0133-Rev. D, 02-Feb-09
 Si2323DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 20
VGS = 5 thru 2.5 V TC = - 55 °C

16 2V 16
25 °C
I D - Drain Current (A)

I D - Drain Current (A)

125 °C

12 12

8 8
1.5 V

4 4

1V
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.15 1800

1500
0.12
R DS(on) - On-Resistance (Ω)

C - Capacitance (pF)

1200
Ciss
0.09

VGS = 1.8 V 900

0.06 VGS = 2.5 V

600

0.03
300 Coss
VGS = 4.5 V
Crss
0.00 0
0 4 8 12 16 20 0 4 8 12 16 20

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

5 1.5

VDS = 6 V 1.4 VGS = 4.5 V

VGS - Gate-to-Source Voltage (V)

4 ID = 4.7 A ID = 4.7 A
1.3
R DS(on) - On-Resistance

1.2
(Normalized)

3
1.1

1.0
2
0.9

0.8
1
0.7

0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

Document Number: 72024 www.vishay.com

S09-0133-Rev. D, 02-Feb-09 3
Si2323DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 0.15

10
0.12

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

ID = 4.7 A
TJ = 150 °C 0.09
ID = 2 A
TJ = 25 °C
1
0.06

0.03

0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.4 12

0.3 10
ID = 140 µA
VGS(th) Variance (V)

0.2 8
Power (W)

0.1 6

0.0 4
TA = 25 °C

- 0.1 2

- 0.2 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

100
IDM Limited
Limited by RDS(on)*

10
P(t) = 0.0001
I D - Drain Current (A)

P(t) = 0.001
1
ID(on)
P(t) = 0.01
Limited

P(t) = 0.1
TA = 25 °C P(t) = 1
0.1 Single Pulse
P(t) = 10
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area

www.vishay.com Document Number: 72024

4 S09-0133-Rev. D, 02-Feb-09
 Si2323DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2 Notes:

0.1 PDM

0.1
t1
0.05
t2
t1
1. Duty Cycle, D =
0.02 t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72024.

Document Number: 72024 www.vishay.com

S09-0133-Rev. D, 02-Feb-09 5
 Package Information
Vishay Siliconix

SOT-23 (TO-236): 3-LEAD

3
E1 E
1 2

S e

e1

0.10 mm
C
0.004" C 0.25 mm
A A2 q
Gauge Plane
Seating Plane Seating Plane
A1 C
L
L1

MILLIMETERS INCHES
Dim
Min Max Min Max
A 0.89 1.12 0.035 0.044
A1 0.01 0.10 0.0004 0.004
A2 0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E1 1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e1 1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L1 0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3° 8° 3° 8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

Document Number: 71196 www.vishay.com

09-Jul-01 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SOT-23

0.037 0.022
(0.950) (0.559)
(2.692)

(1.245)
0.106

0.049
(0.724)
0.029

0.053
(1.341)

0.097
(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72609 www.vishay.com

Revision: 21-Jan-08 25
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Revision: 01-Jan-2023 1 Document Number: 91000