BASIC ELECTRONICS

ASSIGNMENT
SHORT QUESTIONS
1. A silicon diode has reverse saturation current of 2.5 μA at 300 k. Find forward voltage for a
forward current of 10 mA.
2. The reverse bias saturation current for a P-N junction diode is 1 μA at 300k. Determine its
ac resistance at 150 mv forward bias.
3. Write the difference between half wave & full wave rectifier.
4. What is the difference between avalanche breakdown & Zener breakdown.
5. Prove that the dynamic ac resistance is 26mv/ID
6. The leakage current in a certain diode is 25 μA at 25° C. Find the change in temperature
required to have leakage current of 40 μA.
7. Define and derive ripple factor for half and full wave rectifier?
8. Write the disadvantages of center tapped rectifier.
9. Write the Advantage & disadvantage of Si over Ge.
10. An ideal PN junction diode act like a Bistable switch, justify?
11. Define peak inverse voltage and derive PIV of half wave rectifier.
12. Define peak inverse voltage and derive PIV of bridge full wave rectifier.
13. Define ripple factor and derive ripple factor of half wave rectifier and full wave rectifier.
14. Draw Piece-wise linear model of Si-diode, ideal diode and Si-diode with forward resistance
(rf).
15. Define static resistance and dynamic resistance and how these are measured graphically.
16. Write the difference between semiconductor and insulator by using energy level diagram.
17. For a signal V=20Sin (60 t + 300 ) .find time period frequency, phase angle and amplitude.

FOCUSED SHORT QUESTION

1. Determine V0 & ID

2. Calculate V0 and draw the output wave form.

 3. Determine V0 & ID in both the circuits given below.

4. Calculate V0 and draw the output wave form of clamper circuit

5. Draw neat diagram and explain the operation of bridge rectifier and derive its
efficiency.
6. Calculate V0 and draw the output wave form.

Input signal is +20 to -20 sinusoidal signal. Diode is Si type. V==5 volt.

7. Prove that the dynamic ac resistance is 26mv/ID.

 8 Determine the current I for the configurations of Fig shown using the approximate
equivalent model for the diode.

LONG QUESTION
1. a) AC voltage of 230V is applied to a half wave rectifier circuit through a
transformer to turn ratio 10:1.The load resistance value is 1kΩ and diode
internal resistance value is 20 Ω.Determine Vm , Im, Iavg, Irms.

b) Calculate efficiency, ripple factor, form factor of the above question

2. a )AC voltage of 230 V rms applied to a bridge full wave rectifier circuit through a
transformer to turn ratio 10:1 and. load resistance is 2kΩ.if the diode forward
resistance 20Ω then calculate Vm , Im, Idc, Iac, input ac power, output dc power.
b) Calculate efficiency, ripple factor of the above question.

3. a ) Calculate V0 and draw the output wave form where V=5V, input signal
Vi= 20Sin θ. Diode is ideal diode.

b) Calculate V0 and draw the output wave form. Diode is ideal diode.

MODULE-2
SHORT QUESTION
1. Why transistor is called as Bipolar Junction Transistor? And draw Ebers Mole model of
transistor.
2. The emitter current IE in a transistor is 3 mA. If the leakage current ICBO is 5 μA. α =
0.98. Calculate the collector & base current.
3. In a transistor α = 0.995 , IE =10 mA & leakage current ICBO = 0.5 μA. Determine IC,
IB, ICEO.
4. IN a transistor circuit IE = 5mA , IC = 4.95mA , ICEO = 200 μA. Calculate β & ICBO.
5. What is the relationship between α,β, γ.
6. Which biasing circuit is most stable one & why?
7. Write the difference between BJT and FET?
8. What do you mean by proper biasing of transistor?
9. Why CE BJT configuration is mostly used?
10. Why different types of transistor configuration are made? And draw common emitter
configuration with proper bis potential.
11. Define the d.c current gain of all transistor configuration of BJT. Find the relation
between α,β.
12. Derivee IB,IC,IE,VCE,VC for voltage divider circuit.
13.

FOCUSED QUESTION
1. Write the characteristics of CE and CC transistor configuration with neat diagram
using n-p-n transistor.
2. Write the three current equation of BJT. prove that relation between α,β,γ .
3. calculate IB,IC,IE,VCE,VC

4. Explain with suitable example transistor acts as an amplifier?

5. Determine IB, IC, VC , VB for the network. Given β=90.
6. Determine RC RE RB, VCE. VB. Given β=80

LONG QUESTION
1. a ) Determine IB, IC, VC , VB,VCE for the network. Given β=120.

b )Draw and Explain the characteristics of Common Base , common collector and
common emitter configuration.

2. a ) Determine IB, IC, VC , VB,VCE for the network. Given β=180

3. .a)Describe the Voltage divider biasing circuit of BJT
b)Describe the operation of CMOS.

MODULE-3
SHORTQUESTION
1. Write the advantages of negative feedback
2. Write down the Shokley`s equation & define each term associated with it.
3. What is barkhausen criteria on oscillator.
4. Calculate the gain of negative feedback circuit.
5. Write the difference between JFET and MOSFET?
6. Write the difference between D-MOSFET and E-MOSFET?
7. Which FET is known as IGFET and why?
8. Draw the drain characteristics of JFET and show the region?
9. Write the current equation of E-MOSFET and define each term.
10. Oscillator is a which type of feedback circuit and how much is the phase shift.

FOCUSED SHORT QUESTION

1. Describe the construction and operation of JFET.
2. Describe the construction and working D-MOSFET.
3. Describe the construction and working of E-MOSFET .
4. Explain how the CMOS behaves as inverter.
5. Describe the types of negative feedback circuit with proper diagram.
6. Determine the VGSQ. IDQ. VDS. VD. VG. VS for the network
. 7. Determine ID, VD for the given configuration. Given IDSS= 5mA, VP= -5V.

LONG QUESTION
1. a ) calculate ID, VDS , VD , VS ,VG .given IDSS =10mA, VP = - 3.5V

b)Draw the Transfer characteristics of JFET.

2. a ) calculate ID, VDS , VD , VS ,VG .given IDSS =6mA, VP = - 6V

 b)Draw the drain characteristics of D-MOSFET.
3.a ) . Determine ID, VDS , VD , VS for the given configuration. Given IDSS= 4.5mA, VP= -
5V.

b) Draw the drain characteristics of E-MOSFET

MODULE-4
SHORTQUESTION
1.Add the following number using 2’s compliment.

27 and-75
1. Add the following numbers using 1’s compliment 73.5-112.75
2. State & proof De Morgan’s theorem.
3. Proof that the duality of EX-OR is its compliment.
4. Proof that the summation of all the min-term in three variable is equal to 1.
5. Design AND gate using NOR.
6. Design OR gate using NAND.
7. Design EX-OR gate using NAND.
8. Design EX-NOR gate using NAND.
9.
 10. Design EX-OR gate using NOR.
11. How EX-OR behaves as inverter and buffer?
12. How EX-NOR behaves as inverter and buffer?
13. 302/20=12.1sss . Find out the base?
14. The solution set of quadratic equation x2-11x+22=0 is 3 and 6, find the base.

FOCUSED SHORT QUESTION

1.
( A+ B ) ( C + D ) ( E+ F ) (G+ H ) apply De Morgan’s theorem
2. Without reducing , convert the following expressions to NAND logic.
(A + C) (ABC + ACD)
3. Without reducing , convert the following expressions to NOR logic.
( x y+ x + x + y )
4
5. Implement the following function
i)F=A’+BC using NAND gates only
ii)F=A’B+C using NOR gates only
6. Find the minterm & maxterm.
F(A,B,C,D) = A+ B C' + AB D' + ABCD
7. a )AB + A(B + C) + B(B + C) = B+AC prove it
b) ABCD + AB(CD ) + ( AB¿ CD = AB + CD
8. Prove that x+ x=x and x. x = x using Boolean laws.
LONG QUESTION
1. a) Find the minterm & maxterm of following Boolean Expression.
F(A,B,C,D) = A ( B+C ' ) ( A+ B' ) ( B+C+ D ' )
b) A B(C+ BD )+ A B=BC . prove it
2.a) Reduce the Boolean expression x’yz+ xy’z+ xy into canonical form of SOP and
POS by using truth table.
(b) Simplify using Boolean Laws into standard SOP.

(c) Implement simplified expression by using NAND gates and NOR gates only.
 MODULE-5
SHORTQUESTION
1. A signal represented as 50 sin (600t+60). Find out the amplitude, frequency, phase.
2. Give the signal representation of analog, discrete, digital signal.

FOCUSED SHORT QUESTION

1.Write the short notes about AM & FM.
2.. Write the short notes about IOT.