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BJT Biasing

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37 views50 pages

BJT Biasing

and thIT IS A VERY GOOD BOOK AND IT IS LOVING BY ALL

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Vibhor Krishn Mishra
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BUT DC Biasing BIPOLAR JUNCTION TRANSISTOR DC BIASING + In the course of electronic devices, we have studied the construction and working of BJT and how P-type and N-type semiconductor materials are fabricated together to form a transistor, behaves when we apply some external input‘ Raek Your Brain. signal and which configuration of BJT behaves more efficiently. Why/s BUT called a bipolar device? ‘+ In this chapter, we will deal with the addition of resistor and other passive elements to the transistor so that it can be used as an amplifier or a switch. ‘+ Transistors with proper bia in many applications. ‘+The two types of signals applied to the BUT © AC signal DC signal DC signal is mainly for the biasing of the transistor and acts as a power supply. The AC signal is the primary signal to be amplified using the transistor. It is usually the message signal, © Let us revise what we learned in electronic devices and circuits about BJT. ig can be used Transistor Is the fundamental building block of computers and other modern electronic devices. ‘© Transistor is a three-layer device formed by ‘two semiconductors of the same type and one semiconductor of a different type, Le. elther ‘two N-type and one P-type or two P-type and one N-type semiconductor material. © One type of semiconductor Is sandwiched between other similar types of semiconductors. ‘+ When an N-type semiconductor is sandwiched between P-type semiconductors, then we get PNP transistor, as shown below. @ Base Collector | 0 + hole = S electron ‘+ When a P-type semiconductor is sandwiched between two N-type semiconductors, then ‘we get NPN transistor, as shown below. = electron 2 hole + As shown in the above transistor structure, there are three regions called emitter, base and collector. ‘+ The doping level and width of these three regions play a significant role in the working of the transistor. Emitter This region is heavily doped compared to the other regions. Since this region transfers the charge carriers to another region for operation, it is called an emitter. Base This is the least doped region and the most important region because it transfers the carriers from low resistance to high resistance, which will perform the amplification process. Collector This region is a moderately doped region and ‘has large width and surface, and that is why this region collects the carrier emitted by the emitter region, and hence itis called as a collector, @ @ Why does an electronic circult require a DC supply to work and what happens if we want to operate it using an AC supply? Rack Your Brain ‘Transistor means the transfer of resistance which transfers the signal from low resistance to high resistance, Working of transistor After learning how NPN and PNP transistors are formed, we will now apply some external voltage to the transistor. To understand the working of the transistor, let us take a PNP transistor and apply external DC supply voltage to the two junctions which are formed. -—_L y= Veg Vee Fig. 3.3 Movement of Cartiers According to the polarities of Vee and Voc shown above, the emitter-base (E8) junction Is forward biased, and the collector-base (CB) junction is reverse biased. EB-junetion Is forward biased, which means the width of the junction J, will reduce, and that of the CB-Junction J, will increase. Holes of the P region in the emitter have the same polarity as that of the DC supply and therefore are repelled by the positive terminal of battery V;_. AS a result, the holes will move from the P to the N region, and since the base region is very lightly doped, a maximum number of holes will pass to the collector. Only a few holes recombine with the electrons in the base region resulting in base current Ip. For high current gain, the base current should be as low as possible. @ Why is emitter very heavily doped ‘compared to other regions? Rack Your Brain The ratio of the width of the emitter to the base is 10:1 Flow of current in PNP transistor ds k 7 mee le we He oe Ve Ve Emitter current |p = Base current |, = Collector current The relation between these current is given by Working of NPN transistor: ‘+ The working of the NPN transistor is the same ‘as that of the PNP transistor. The electrons play the same role as being played by holes, but the direction of current is reversed, as ‘shown below. fo & N Pp N . a oa Le nay’ ae Vee Vee Fig. 3.5 Current Flowing in NPN Transistor ‘Modes of operation Depending upon the polarity of the biasing voltage, we have different modes of operation of transistors, and each mode has @ What happens if emitter and collector terminals are interchanged? Rack Your Brain BJTis a device in which we control the flow of electrons between two terminals using a third terminal. 1) Both J, and J, are forward biased. ds op |u| e cy) \|+ + Vee Mew Fig. 3.6 J, and J, Forward Biased Jj Forward biased zt Forward biased Mode: Saturation Properties: Very low internal resistance ‘Application: ON switch 2) Both J, and J, are reverse biased. Jeeeas op |w| pe fF 8) It 1! Ve Veo Fig. 27 J, and J, Reversed Biased Jj Reverse biased zt Reverse biased Mode: cut-off Properties: Very high Internal resistance ‘Application: OFF switch Why Is the base region lightly doped and made to be very thin? Increases ‘the input voltage applied, but it Is not an amplifi 3) J1s forward blased, and J, Is reverse biased, ow i —-—§ii Jy Forward blased Ja: Reverse biased ‘Mode: Active Properties: Excellent transistar action Application: Amplifier 4) J,is reverse biased, and J, forward biased, ees | i) Vee Vex Fig. 3.9 J, 16 Reverse Biased, J, Is Forward Biased ug Reverse biased Mode: Reverse active Properties: Very poor transistor action Application: Attenuator Note: For NPN transistors, the polarity of the voltage source Is reversed in every case, whereas properties, mode and applications are the same. @) @ Why doping concentrations are different in the three regions of the transistor? Rack Your Brain 1 FB RB Active 2 FB FB Saturation 3 RB RB Cutoff 4 RB FB_Reverse active ‘Symbols of PNP and NPN transistor + We have studied the transistor’s operation and mode of working but usually, we do not use a three-layer structure to show the transistor, Instead, we use symbols to show transistors. NPN transistor PNP transistor Fig. 310 Symbols of NPN and PNP ‘The only difference between the symbols of the PNP and NPN transistor is the arrow. ‘In NPN, the arrow is outwards, and in the PNP, the arrow is inwards. It must be noted very carefully that the arrow Is always on the emitter terminal ‘The direction of the arrow is the direction of the emitter current. Every electronic circuit requires a DC power supply for its operation. BJT CONFIGURATION ‘+ BUT is a three-terminal device through which the input is applied, and the output is taken the across other two terminals, as shown below. Fig. 311 BUT as a Two Port Device ‘+ There are three possible configurations of BJT. In every arrangement, one of the terminals out of three (base, emitter, collector) acts as a reference terminal, one as input and the other as output. ) Common base configuration (€B-configuration) Common emitter configuration (CE-configuration) i) Common collector configuration (Cc-configuration) ‘Common base configuration: ‘+ Inthe common base configuration for the PNP transistor, the base is the common terminal Emitter-base Is the Input port, and collector base is the output port, as shown below. Tae Tt J Fig. 3.12 Common Base Biasing ‘+ We can see that the input is given across the E-B port, and the output is taken across the C-B port. (20) Rack Your Brain Why Is common base configuration called as constant current source? Cd Fig. 212 Circuit for Common Base Configuration ‘+ The operation of the transistor is the same as ‘we studied in the previous section. Input characteristics ‘The input characteristics show how the input current at the input port varies, with the Input voltage with the output voltage held constant, In the common base configuration, Veg is the Input voltage, and I, is the input current and keeps Vcq as the output voltage constant. 02 04 06 08 1012 1416 VulV) Fig. 314 input Characteristics of CB ‘itis clearly seen from the above figure that as Vc increases, emitter current also increases. ‘+ When the voltage Veg is 20V, the current greater than 6 mA, and It decreases as Vg decreases. ‘Output characteristics ‘The output characteristics of BJT are essential to understand, and it is drawn between the output current |, and the output voltage Veg. a & Why is transformer not used as an amplifier? Rack Your Brain Two back-to-back PN diodes cannot function as a single BJT because joining two diodes will result in larger base width than emitter and collector regions. For a transistor, the base width must be as small as possible. tetona) ‘Active Reson —4 Fig. 315 Output characteristics of CB Active region ‘© When junction J, is forward biased and J, is reverse biased, the transistor operates in the active region. © It Is the most sensitive region In the characteristics as output current responds more sensitively to an input signal. ‘+ In this region, the transistor is mainly used ‘as an amplifier; the biasing of the transistor should be done In such a way that transistor should operate in an active region only. Saturation region ‘©The region to the left is the ordinate Vc land above |, = 0. In this region, both the emitter land the collector junction, ie. J, and Ja. are forward biased. Whenever the transistor enters Into the saturation region, it can be used as an (ON switch. Cut-off region ‘+ When both the junctions J, and, are reverse biased, the transistor is said to be in the cut- off region. Therefore, the region below |_ =0 is. the cut-off region. ‘+ The transistor is mainly used as an OFF switch in the cut-off region. @ How does a transistor amplify a low voltage signal? Rack Your Brain A transistor Is a triode that exists in two forms. ‘current gain Current gain Is defined as the ratio of the output current to the input current. In common base, the output current is |,, and the Input currents le e current gain. Outputeurrent Previous Year's Questions “nputeurrent Current gain of the common base amplifier is Match the following: ttways leas than ny esa 1 List 1) The curren gan ofa BJT wil Example be nereased, AuT can be used as an amplifier In 1 The current gan ofa BJT will {Saturation region Coete b) Cut-off region uy The brealedown voltage of 2 Active region BUT willbe reduced, 4 any region Lista Sol: 2) The collector doping ‘ABUT can be used as an amplifier in the active concentration is increased region. ‘b) The base width is reduced. Hence, the correct option is (C). ©) The emitter doping. eee ee eee ote Example 2: concentration ratioisreduced, ‘common base amplifier has an emitter current _)-_‘The base dopingconcentration of 100 mA and a collector current of 98 mA. The Is Increased, Keeping the current gain is: ratio of the emitter doping. =) 098 concentration to base doping &) 048 concentration constant. 9 ©) The collector doping @ 100 concentration ls reduced, sot: Current gain, a=. nae: Input current, lp = 98 mA Current, y= 100 ma nt gain aan 8 curert an ante S09 Hence, the correct option is (A). Example 3: ‘ABUT can be used as an ON switch in which region? a) Cut-off region _—_b) Active region ©) Saturation region d) Reverse active Sol: ‘A BJT can be used as an ON switch in the saturation region, whereas as an OFF switch in the cut-off region. Hence, the correct option is (C). Common emitter configuration: + The common emitter configuration is the most popular configuration of BUT because of its various advantages. ‘+ In CE configuration, the emitter terminal is ‘common to both the input and the output terminals. + Base-emitter is used as the input port, whereas collector-emitter is used as the ‘output port, as shown in the figure below. Es a Fig. 216 CE Configuration of NPN and PNP ‘symbolic representations of the above figures are given below. pte Wyn Fig. 317 Biasing of CE Configuration & Why is the current gain of the ‘common base amplifier always less than unity? Rack Your Brain ‘©The working ofthe common emitter configuration Is the same as that of the common base. Input characteristics ‘The input characteristic is drawn between the Input voltage Vc and the Input current |,, keeping output voltage Vee fixed. La) eegssa 01 02 03 Oa 05 06 07 08 Val") Fig. 348 input Characteristics of CE Configuration I: tnt nt ne output characters (oer 1e output voltage (V-,). eee In the active region only? curt aaa f—___} 1. ua region 7 Veet ‘emt Fig. 119 Output Characteristics of CE Configuration ss) REGIONS OF OPERATION Active region: ‘+ Inthe active region, the emitter-base junction is forward biased, whereas the collector- emitter junction is reverse biased, ‘© The region to the right of Vegayy Is the active region. ‘+ BUTis used as an amplifier in an active region. ‘This region is preferable for the operation of the transistor. Saturation region: ‘+ In the saturation region, the emitter-base Junction Is forward biased, and the collector- ‘emitter junction is also forward biased. + The region to the left of Veqyayis the saturation region. ‘+ BUT is used as the ON switch in this region. Cut-off region: ‘© In the cut-off region, both the junctions are reverse biased. ‘+ The region below |, = OMA Is the cut-off region. BUT is widely used as an OFF switch in this region. Current gain: Current gain is defined as the ratio of the output current to the input current. It is denoted by p. Outputcurrent _ | Inputcurrent — | BUT is a current-controlled device, whereas FET is a voltage~ controlled device. =O A BUT Is sald to be operating in the saturation region if: a) Both the junctions are reverse biased. b) Base-emitter Junction is reverse biased and base- collector Junction is forward biased. ©) Base-emitter junction is forward biased and base. collector junction is reverse. biased. ) Both the junctions are forward biased. Be PF pe pa but ast =o pei Total collector current is given by k= Bl theo Where ceo is the collector current with the collector junction reverse biased and the emitter open-circuited. = Bh +(1+B)eso Where lego is the collector current with the collector Junction reverse biased and the base open-circuited. ‘eco = (14 B) eso Note: The collector to emitter leakage current should be as low as possible. The leakage current, which was goin CB configuration, is increased by (1+B) times in CE configuration, which is the biggest drawback of CE configuration. Example 4: ‘A.common emitter (CE) BJT has the value of current gain 2? a) 98 b) 99 ©) 100 a) 49 Sol The relation between a and fis given by «roars cutns A transistor having @ = 0.99 and Vge = O7V Is used in the circuit Of the figure with a power supply of 12V, the value of the collector current will be: B (0.01 p=99 Hence, the correct option is (8). Example 5: ‘Acommon emitter transistor has a current gain of 100, the base current of 100 1A and the collector to base leakage current of 1 j!A. Calculate the emitter current. sol ke = Bh +(1+ B) eso ——— 1, = 100, If the transistor In the figure has oa a high value of fb and Vse of 0.65, ‘the current | flowing. through 100 x 100 x 10-* + 101 x 10° 2 kilo-ohms resistance will be |, =10 x 10-9 + 0101 x 10 1, = 10.101 ma Emitter current 65 ka “ae ma tsa Example 6: con Choose the correct order of doping in three na regions of the transistor in decreasing order: a) Collector > Emitter > Base b) Emitter > Collector > Base ©) Emitter > Base > Collector d) Collector > Base > Emitter Sol: Since charge carriers flow from emitter to base and then to the collector, the emitter Is to be doped heavily so that maximum carriers should reach the collector and have high gain. The base Is the most lightly doped and the collector is also lightly doped. @) The correct order is Emitter > Collector > Base Hence, the correct option is (8). Common collector configuration: © Ina common collector configuration, the collector is the common terminal between input and output-The input is applied across the collector-base port, and output is taken across the collector-emitter port, as shown below. CC PNP Transistor CC NPN Transistor Fig. 2.20 PNP and NPN CC Configuration The working of the PNP and NPN common collector configuration is the same, the only difference being the role played by holes in the PNP transistor is the same as that of the electrons in the NPN transistor. The symbolic representation of the above configuration is as shown below: CC PNP Symbol CC NPN Symbot Fig. 3.21 Symbolic Representation of Common Collector ‘configuration Current gain ‘Current gain is the ratio of the output current and the input current. itis denoted by y in the common collector. Output current Input current ‘Area of collector, base and emitter ls in the order of Collector > Emitter > Base. Outputcurrent _ | Inputeurrent |, Example 8: Which of the following configuration has maximum current gain? a) Common base b) Common emitter ©) Common collector d) Same for all sol Current gain for common collector is yepes So, the common collector has maximum current gain among all configurations. Hence, the correct option is (C). Example 9: The current gain ‘a’ of BJT transistor is 0.88, find 7. sol: What Is the difference between base transport factor (fH) and ‘common emitter current gain wr? ‘TRANSISTOR CURRENT COMPONENTS + In the operation of the transistor, there are various current components involved. Early effect is the variation of the idth of the base in BJT due to ‘the variation in the applied base to collector voltage. Fig. 3.22 Current Components in Transistor ‘©The emitter current consists of hole current Ie due to holes crossing from the emitter to the base and electron current Ine due to electrons crossing from the base to the emitter. The direction of the hole current is the same as that of the conventional current. Some of the holes are combined with the electrons in the base region, and most of the holes reach the collector side. ge = Ipc = holes recombining base region Emitter injection efficiency: It is the ratio of injected carrier current at the emitter junction (J) to the total current. Injected cartier current at, Total emitter current where, lye = injected hole diffusion current at the ‘emitter junction Ihe = injected electron diffusion current at emitter junction eee pe seedcarercuretrexcingat iecinseaercureneety pate be tn the commen base configuration, the lrge- aterrane yan apy EARLY EFFECT OR BASE WIDTH MODULATION ‘+ The preferable region for the operation of the transistor is the active region which means that the junction J, is forward biased and J, Is reverse biased, as shown below, Fig. 3.23 Early Effect in BJT In the reverse-biased case, the depletion ‘width is very large as compared to the forward bias depletion width [As we increase the reverse-biased voltage Veg the depletion width increases more and may penetrate to the emitter, which is known as the early effect, (02) SO Which of the following statements are correct for basic transistor amplifier configurations? a) CB amplifiers have low Input Impedance and low current gain, b) CC amplifiers have low output impedance and a high current gain. ©) CE amplifier has very poor voltage gain but very high input impedance. ‘The current gain of CB amplifier is higher than the current gain of CC amplifier. cd ‘What is base width modulation? Rack Your Brain Since base width is changed by reverse bias voltage Veg it Is also known as the base width modulation. _— Somme Early effect generally occurs when the transistor is operating in the: NPN transistor is faster due to 1a) Active region ‘the higher mobility of electrons. b) Cut-off region ) Saturation region 4) Reverse active region Sot: In the case of early effect, the input junction J, is forward biased, and the output junction J, is reverse biased, which is the active region. Hence, the correct option is (A) Example tt: An NPN BUT in a CE configuration circuit TO is shown below with a current gain of infinity and Vze=0,6y, Inthe circuit ofthe figure, assume sihe ST operates bi whlch tegen that the transistor isin the active region, It has a large f) and its = base-emitter voltage is O7V. The value of i, is Zin FR 8) Saturation b) cut-off ©) Active 4) Reverse active ae sol: 8) Indeterminate since Re is not Ee given 7 i by tma 2) 5mA 4) 10mA Applying KVL in the input loop, 3-06 -1,x1k=0 2.4 mA 25 = 24 x 10-9 412k = Vog = 2.8 x 10-9 1 Rack Your Brain Vce = ~6.2V which is not possible CE junction is forward biased. EB Junction is also forward biased, So, the transistor operates in the saturation region. Hence, the correct option is (A). What are the advantages of biasing In eur? Input Very low Very low Very high impedance (60.0) (60 ka) (200 kan) output Very high High Low impedance GMa) (10 ka (609) Current gain Lessthan1 ‘High (100) High (100) Voltage gain Low (150) High (500) Less thant Leakage current Verysmall Very large Very large For high- For audio Application frequency —frequency —**°" Impedance application application Greats BUT Biasing ‘* Inorder to operate BJT in aparticular region, we ‘supply DC power through varlous connections of resistors which are called BJT biasing +The AC signal, which is to be amplified using 8JT.is applied through some reactive element Uke a capacitor. ‘+ There are various ways by which we can bias BUT for operating in a particular region. + IF BUT is to be used as an amplifier, it must ‘operate in the active region at some stable point known as the operating point, also called the Q-point, Operating point: + Inordertouse 8JTasan amplifier, the transistor should be operating in the active region using some DC power supply (external source). ‘+ Foragiven value of resistors and power supply, the operating point, which is the most stable point on the characteristics, is obtained and then a time-varying small-signal which is to be amplified is applied. Consider a common emitter fixed biased circuit (to be discussed later). Fig. 3.24 BUT With AC#DC Supply Vcc is the power supply, V, is the small-signal which Is to be amplified, C, is the coupling capacitor which will superimpose the input AC signal over OC source and the output voltage is. taken across R,. We discussed the output characteristics in the previous sections, and we Imposed the OC load 1es on the output characteristics. DC load line: For the operating point, we have to do the DC analysis. For DC analysis, replace the Input and output capacitor with an open circuit and Input AC signal with a short circuit, as shown below. rer ctone If the transistor in the figure is in saturation, then Pre denotes the 6 curentexin Ics always equal to Bac ly Ics always equal to ~Pyo ly Ics greater than or equal to Pale 4) cis less than or equal to fe! eee The DC operating point is the DC steady-state point of the transistor When the AC input signal is zero. Fig. 3.25 DC Analysis ‘Applying KVL in the Input loop, Le. collector-base loop, Veo ~ lee ~ Vee = 0 Applying KVL in the outer loop, ie. collector- emitter loop, Veo ~ leRe ~ Vee = 0 Re Re The equation of |, represents a linear line with a decreasing slope, ie." and intercept on the x _For good stabilised biasing of the transistor of the CE amplifier of and y-axis, ‘the figure, we should have x-axis interce; 0 IVES Vor = Veo Moc /-axis intercept: Veg = 0 gives |, = “= y PE Veg = 0 EVES le = FE Fig. 3.26 0c Load Line ‘As clearly seen, the DC load line is the locus of all, possible operating points at which BJT is in the active region. * DC supply Voc and resistances R,, Re should be chosen such that operating point should lie within the characteristics only. Region of operation of transistor Calculate the base current (|,) and the collector saturation current (|) \ If |, < 8, then transistor is operating in active B region. Wye ‘ee . then transistor is operating in the saturation region. Power dissipation Power dissipation of transistor is: Po=leMee P, is maximum in the active region and minimum in the cut-off and saturation region. BIAS STABILISATION + Semiconductor devices are highly sensitive to temperature variations, which may affect the performance of the transistor. Collector current of BJT is given by, Je Bly + (1+ Beg Ico Is the reverse leakage current which is highly ‘emperature-sensitive and undesirable, For proper operation of the transistor, the Q-point should not change by the other transistor parameters and temperatures. I ls changed due to the change in lo fi and Vp: Using partial differential equation: a, HAV ee + SE ap a = EA Previous Year's Questions e For the BJT circuit shown, assume that the p of the transistor Is huge and Vac = 0.7 V. The mode of. ‘operation of the BUT is 1) Cut-off. by Saturation ©) Normal active ) Reverse active Variation due to loo? © When cg changes, the collector current |; also changes significantly; cg changes due to the change in the temperature causing |, to i + Ica doubles for every 10°C rise in the temperature. change. itis given by SE. Variation due to change in Vac! itive to the temperature change in Vee that can change the region of operation. When temperature changes, Vj- changes which finally changes the collector current I. For every 1PC rise, Vag decreases by 2.5 mV Mon oT 2.5mV /°C Variation due to change in (i ‘© Every transistor has a unique current gain f value which is highly sensitive to changes in temperature. since, lp = Blg If changes, |, also changes and is given by ae oo Stability factor: ‘= Stability factor is the change in the collector current |, due to the leakage current log a Ao Collector current, I= Bly + (1 + Blleo Differentiate partially with respect to |, assuming and Vee as constant. Assuming Vegaat = 0.2V and = 50, ‘the minimum base current (j,) required to drive the transistor in the figure to saturation is: oye a a) 56 WA by 1404 60a) 3A Note: if the numerical value of the stability factor Is low, the transistor would be more stable and vice versa. BIASING CONFIGURATION In order to use BJT in a particular region, proper biasing circuit is required. + Acircuit with the least stability factor will be preferred more. + For amplification purposes, It should operate in the active region ‘Types of biasing circuits are: Fixed bias circuit, + Collector to base bias circuit # Self-bias circuit Fixed bias circuit l output. vy Fig. 2.27 Fixed Bias Configuration In the above configuration, Vcc is the voltage supply power to the transistor. For operating point, DC analysis is required, DC analysis Replace capacitor by open circuit. Fig. 3.28 DC Analysic of Fixed Bias =O ‘Assume thatthe ofthe transistor is extremely large and Vag = 0. Ic-and Vce in the circuit shown in the figure are: —"4le i = a 000 a) [c= 1A, Vee = 47 by [= 05 MA, Veg = 3.75 ©) I= 1MA, Vee = 25V d) I, = 0.5 MA, Vee = 3.9V Applying KVL in input loop, R, Applying KVL in output loop, Yoo = teRe = Bh Ver = Vee =| Stability factor ‘© Stability factor for fixed bias ciroult is Se1+p Example 1: A fixed biased circult is shown below; Calculate the operating point and stability factor. ov rook ako. +00) oak, ‘Applying KVL in the input oop, 10 ~ 100x104, - 0.7 = 0 What is the main disadvantage of fixed bias circuit? ‘A coupling capacitor passes the AC signal from one circuit to another but blocks the DC signal. lg = 100 * 93 « 10° ama, Veg = 10 = 1eRe Voge = 10 ~ 014k « 9.3 x 10° Voe = 6.28V l= 9.amA Stability factor for fixed biased circutt i: sa14p s=101 Note: it can be clearly seen that the value of the stability factor for fied bias configuration is very high. So, we need to go for other biasing configurations such as collector to base bias circuits a8 discussed in the next section. Example 13: {An NPN transistor operating in a common emitter ation has @ current gain of 100. The operating point of transistor is (20mA, 10V). Find (Re # Rin koa 20¥ e ‘Thecircuit usingaB/Twithp =50and Vpe = 0:7 V is shown in the figure. ‘The base current |, and collector voltage V. are, respectively: 2) 43 wh and 14V ‘b) 40 pA and 16 V ©) 45 pA and NV 4) 50 yA and 10 sol: Given that, |= 20ma, Rack Your Brain ‘What happens if we do not use a ‘coupling capacitor for amplifying alow AC signal? Applying KVL, R. | 20-10 20x10" o.ske (B87) 100 20x10" eas rt Rg + Re = (96.5 + 0.5) x 10° Introducingaresistorin the emitter ‘of a common emitter amplifier + Re = 97k stabilises the DC operating point against variations in Collector to base bias circuit: 4) Only the temperature ‘+The stability factor for fixed bias is very high, _) Only the fi of the transistor which means that the fixed bias circuit is _€) Both temperature and very sensitive to the temperature, which is) None of the above undesirable. The circuit for the collector to base bias circuit is shown below: a) Fig. 2.29 Collector to Base Bias Configuration + Inthe above circuit, both AC and OC supplies are given. For DC analysis, remove the capacitor by an open ‘circuit and for AC analysis by a short circuit. Veo neg Matto ie Fig. 3.30 DC Analysis of Collector to Base Bias ‘Applying KVL in the Input loop, Vee ~ (la 1Re Vee =0 c= fil (Active region) Voc ~ tp (B+ Re ~ Igy - Vee = 0 1g + DR. + Ral = Voc ~ Vor YoY 8° GR TR What is the advantage of using an emitter follower circuit? Applying KVL In the output loop, Vee = (le + 1DRe = Vee = 0 Vee Veo = la + 1DRe Stability factor + Applying KVL In the input oop, “Mec * ly + Re * HRs + Voc Differentiate the above equation partially with respect to |, we get: (zeincetin eo a Re a RR “ep stably factor, s=- 1 “a(a] a ‘= Clearly, stability for this circuit Is less than that of the fixed circuit, which Implies that this is more stable with respect to the previous. Note: ‘+ The value of R. should be large for greater stability ofthe circuit. + The base resistance (R,) causes negative feedback, which reduces the gain of the amplifier, which Is also undesirable. Collector to base hias with emitter follower: ‘+ In the emitter follower circuit, an emitter resistance R, Is connected, as shown below. a) Collector current should be Insensitive to the variation in og, Band Vpe- Rack Your Brain Fig. 3.31 Collector to Base Bias With Emittor Follower Base current is given by, [= s m+ BR, +R) Vou ® Vecr(Re + Ree ‘Advantage of emitter follower circuit ‘© Emitter follower circuit is more stable as compared to the previous circuit in which Re Js absent. Stability factor is glven by: 7 pat yl Bez RD Hain ea) Example 14: A collector to base bias circult is shown below. Calculate the stability factor. 10v 1K 50ka B= 120 «ren ar cntone tn the following transistor elrcult, Vge = O7V, fg = 25mV/l, and all the capacitances are very large. The value of DC current Ie ajimA by 2mA )5mA — d)10mA sol: Stability factor of the collector to base feedback configuration Is given by: ee Re rer asn0 ae10e a 36 Example 15: In the above example, if the fixed bias circuit would have been used with the same value of collector and base resistance, calculate the stability factor and compare it with the collector to base bias feedback circuit. sol: Stability factor of fixed bias is 1+. +120 = 121 It can be easily seen that fixed bias has a much higher stability factor than collector to base bias circuit. Voltage-divider bias: ‘+ The main disadvantage of the collector to base bias circuit is that we require a large value of R, to have a more stable operation. For this, we require some other configuration which is voltage-divider bias. Moe R a, Ei —t Ry wy R Re + Fig. 3.52 Voltage Divider Bias Configuration + Veg Is for power supply Vis input applied Vy is output taken across load R, Cy C, is the coupling capacitor R, Is the emitter follower resistance + In order to understand the performance of voltage-divider bias required. DC analysis © Replace capacitor with an open circuit and AC voltage source with a short circuit, uit, DC analysis is Vex 2R, Fig. 3.33 DC Analysis of Voltage Divider + The analysis of the above circuit is done by obtaining Thevenin’s equivalent circuit. ‘Thevenin's voltage V,,, R, and R, forms the voltage divider networks. Vee R, Fig. 2.24 Thevenin's cireult Voltage across R, is the Thevenin’s voltage which Is given by: = MeRe RR, a Why thermal runaway occurs In BUT only and not in FET devices? Rack Your Brain Thevenin’s resistance , and R, are in parallel ~ RR RAR, ‘The simplified circuit is shown betow, Why is thermalstability important in BJT transistors? Fig. 3.35 simplified Circuit of Voltage Divider Applying KVL in the input loop, we get: Vin ~ taPrm ~ Vac ~ (lp + lDRe = 0 lg (Active region) [Ry + B+ DR Applying KVL in the outer loop, we get: Voc = leRe = Vee = fly + IRE = Vee = Vee lelRe + Ry Stability factor On partially differentiating the equation of input KVL with respect tof, and we get: Stability factor, $= ‘+ It can be clearly seen from the above equation that the stability factor is independent of the collector resistance ‘Rc, which means that whatever be the value of resistance R., Ie willnat affect the stability of the given configuration + Voltage divider circuit is the most stable clroult among all the configurations. Currents in common base configuration: ‘Emitter current in common base configuration is given by: mitter current fase current ‘ollector current ‘ollector to base leakage current lego? This current plays a very important role In the performance of BJT. This current is highly. sensitive to the temperature change and should be as low as possible. lego doubles for every 10°C rise in temperature. C The total collector is given by: Rack Your Brain le ale + leno Note: For proper working of the transistor, the How the resistance of the leakage current should be as low as possible. thermistor varies with the temperature? ‘THERMAL RUNAWAY ‘+ Semiconductordevicesarehighlytemperature- sensitive devices; when temperature increases, the collector current |, also increases, which further increases temperature causing high heat in the transistor and the transistor may damage completely, Th.) —+ 117 Damaging of BJT If T,= Junction temperature of collector a8) ‘,= Ambient temperature P= Power dissipation across collector junction Then, thermal resistance (0) is: th "Cwatt or *k/watt) ‘= Thermal resistance is analogous to current limiting resistance. Thermal runaway is an unwanted phenomenon in JT amplifiers, and it should be avoided, so the question is how to avold thermal runaway? A transistor is said to be thermally stable ifs a mao 2 _ Rate of release of heat *, ci ar, = Rate of dissipation of heat \ For thermal stability, Vor < Compensation method: The collector current is highly temperature- sensitive and changes with temperature. In order to stabilise collector current Ig, we have to use some temperature-dependent resistors such as thermistors, sensistors and devices such as a diode, We will discuss temperature compensation using these elements one by one. 1) Diode compensation In this case, the diode Is operated in reverse biased mode. & How is current mirror circuit 50 useful in powering multiple matched transistors? Rack Your Brain Fig. 3.36 Diode Compensation Circuit + Ig is the reverse saturation current of the diode, and if the diode land transistor are made up of the same material, then I, and I. are nearly equal to each other, causing cancellation. 1c= Bil ~ Bla + 1+ Pleo If lg = leg and iff is high >> lc B= Bly 2) Thermistor compensation Fig. 3.37 Thermistor Compensation Circuit yendent ‘+R; Is nothing but a thermistor which is a temperature resistor. As temperature increases, R, decreases, causing leakage current to flow through R, Example % Which of the following statement is not correct about thermistors? a) It is used for temperature measurement by It is highly sensitive €) It is made up of semiconductor d) It is made up of metals Sol: A thermistor is a temperature sensor and is highly sensitive. It is made up of semiconductors and not metal. Hence, the correct option is (0). Example 1 The condition for thermal stability of BUT is: \, vic > Me Wer > oy, 2% So, condition for thermal stability is: Ve «te 2 Hence, the correct option is (A). CURRENT MIRROR CIRCUIT ‘© After learning about BJT biasing, the next ‘question Is how to use BJT In any Integrated circuit. Nowadays, millions of transistors are fabricated on a single silicon chip. ‘+ Transistors usually require a DC power supply to work. So, If we have to fabricate millions of transistors, we require millions of power supply. But is it practical to give millions of power supplies for a single chip? @ What is the main disadvantage of a normal current mirror and how can It be Improved using Widlar current mirror? Rack Your Brain The answer is NO. So, the next question Is how to power millions of transistors using a single power supply? © The answer is current mirror circuit. Using a current mirror circuit, we can power a number of transistors using a single power supply. ‘What is a current mirror? Current mirror is the circuit In which the same collector current flows through two matched transistors. v. “ta, re oy a Fig. 3.38 Current Mirror Circuit ‘+ The base and emitter of two transistors, Q, and Q,, are tied together. ‘© The base current of transistors should be very low, which means that the current gain f of the transistor should be very large. Collector current, |, =1,e"*"* ‘Where |, = saturation current b=kem™ eo hs Since two transistors are matched, geen k Applying KCL at the collector node of transistor 0, kth th _— bat =k, + 2, Leth, =k, =kand k= =b her = be + 2ly Since the transistors are operating in the active region, at 0 Applying KVL in the input loop of transistor Q,, Veo “let ~ Vee = 0 Voc ~Vy Example ‘A current mirror circuit is shown below, which has a current gain of 200%, find current Ip. in transistor Q, if Vgc = O.7V for the transistor, ER W. sol: Given that, current gain ji rev peel |i Applying KVL at input of Q,, 15 ~ 10k lg = 0.7 =0 pap = 143. mA Be 143 «10° = 209 4.434107 a phge eset? = Bop t43 10 1.41 mA idlar current mirror: ‘The main disadvantage of the current mirror is the resistance R, which should be very high and is not fabricated very easily. So we have to modify the current mirror circuit as shown below. Fig. 3.39 Widlar Current Mirror Circuit a8) ato of eollactorcurent i, begins ke Taking natural log on both sides, we get: ot] nineties & sey b Applying KVL in the base-emitter loop, we get: Nae, ~ Vac, — Re = 0 Mae, = Var, +05, +4, Pe If B is very large, |, Multiple transistors current mirror: We already discussed that silicon chip contains millions of transistors that need power for operation. Consider N transistors connected as shown below. Fig. 3.40 Multiple Current Mirror Circuits Since all the transistors are Identical, & bok Applying KCL at collector node of translator , ake ke B (N+) a) _ ( B ) oe Be teN, Inthe Ina clreul, two tranistore are used, N B tol pea Note: In all the current mirror circuits, single power supply is used. Wilson current mirror: * All the discussed current mirrors are suffering from low output impedance. In this section, we discuss a special current mirror known as the Wilson current mirror, which has a very high output impedance and output current nearly as same as the current through the power supply. a ‘The circuit diagram for the Wilson current mirror Is shown below. Fig. 3.41 Wilson Current Mirror circuit ley =a ANd ly =o = Applying KCL at collector of Q,, we get hes Ay they IS, les = fn * len

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