HH J Nationai Institute ojrrecfino{ogy, (j)e[lii Name of the Examination: B. Tech Branch :ECE Semester : III Title of the Course : Solid State Devices Course Code : ECB 201 Time: 1.5 Hours Maximum Marks: 25 ------------------------------------------------------------------------------------------------------------ .._----------------- • Questions are printed on BOTHsides. Answers should be CLEARANDTO THE POINT. r' .... ' .... ' • All parts ofa single question must be answered together. ~-""""""""":--__:_ ELSEQUESTIONSHALLNOT ___ 3E EVALUATED. .. ·Use follewing data if not given in a problem: Eo = 8.85x10·14F/cm, Er (SiOz) = 3.9, Er (Si) = 11.8, At room temperature for Si [!In = 1350cmz/V·S, !lp = 480 cmz/V·S, n, = 1.5xl01o/cm3, Eg = 1.12 eV], k == 8.62x10's eV/K. 'tn = Lp= 1!ls, Eg(Ge) = 0.7 eV, ni (G~)= 2.5xl013 /cm3.
1. t' In. a Si semiconductor sample, the doping profile is given by the following acceptor impurity [4-M] . profile: NA = 1014. exp( -a. x2). For x 2:: 0 and assume, a = (tL:1/2)'
(a) Find the expression/ equation for the electric field for this sample at above conditio.'}.
(b) Then from part (a), calculate the values for the electric filed at x=a/2 and at x=a distances in unit ofV /crn only.
2. In a Si semiconductor sample, the doping profile is expressed in terms of the following figure. i_3lViJ :' ,', •I .' f," 1( (a) At x =0 urn, what is the type of the extrinsic semiconductor material and why? (b) At x =i um, what is the type of the extrinsic semiconductor material and why? (c) At x =1 urn, what should be the position of Fermi level [Es] w.r.t to intrinsic Fermi level [Ei] for this semiccnductor materiai?
ZJ, : 1 2- ?:_CUrr~) _, 3. Consider a Ge crystal. at room temperature doped with 5*1017 /cm" A~ atoms. [3M] . [nr=Zx l 013/ crn ']
(a) Find the equilibrium hole concentration for the sample.
(b) Find the position of Fermi level (Ep) w.r.t to intrinsic Fermi level CEi) for this semiconductor material. (c) Find the position of Fermi level (Ep) w.r.t to bottom of Conduction band (Ec) for this semiconductor material. (d) Draw the consolidated energy band diagram including all above. 4. A Si bar 0.001 ern long and 100 urn? cross sectional area is doped with 1018 jcm3 donor [4M1 atoms. If due to the application of 10 V bias, 107 Arnp/rnz current density develops, then (a) What will be the conductivity of the Si bar after applying above bias? (b) What will be the mobility of the Si bar after applying above bias? (c) Calculate the electric field developed across the sample.
5. Consider a Si sample kept at room temperature having band gap Eg = 1.12 eV. [2M] If the Fermi level Ep, is located exactly at the middle of the band gap for this sample, then what will be the probability of finding an electron at E = Ec + 2KT?
6. Derive the expression for the electric field across a linearly graded pn junction diode having [2M] physical contact at x=O. The space charge profile is given as p(x) = qax, where, x is the distance with [z] = ±xo from x = 0 on either of the sides and a is constant.
:GG , B® iGe @E> -'Xo t;t=o
7. In a CROj DSO, sweep rate frequency is 100 Hz with 2 full sinusoidal cycles observed in the [lM1 screen. What will be the frequency of the voltage applicable at the input vertical parallel plates?
8. Quantum Mechanics is supported by which mathematical equation? [lM1 9. Write true (T)jfalse (F) only against each of the following: [0.5x 10 = (a) Slow luminescence process is known as fluorescence. 5M] (b) Any drift, diffusion or combination of two in a semiconductor results in current proportional to the gradients of the two quasi-Fermi levels. (c) Depletion approximation is related to carrier depletion within space charge region. (d) Carbon (C) is an indirect band gap semiconductor. (e) Junction potential decreases with increasing temperature. (f) Junction width decreases with increasing temperature. (g) Conductivity of a semiconductor decreases with increasing temperature. (h) Band gap (Eg) increases with increasing temperature. (i) Band gap increases with increasing doping. CD Lattice controlled mobility decreases with increasing temperature. Useful Equations
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