Bi-polar Junction Transistor (BJT)

COMMON-BASE CONFIGURATION:

Figure 1:Common-Base Configuration (p-n-p Transistor) Figure 2: Common-Base Configuration (n-p-n Transistor)

For Common-base configuration:

Input current = IE
Input voltage = VBE

Output current = IC
Output voltage= VCB

!"#$"# &"''()# *!
Current amplification factor, α= =
*)$"# &"''()# *"

Expression for collector current:

The whole of emitter current (IE) does not reach the collector. It is because a small percentage
of it, as a result of electron-hole combinations occurring in base area, gives rise to base current
(IB). Thus,
IE = IC + IB
Moreover, as the collector-base junction is reverse biased, therefore, some leakage current
flows due to minority carriers. It follows, therefore, that total collector current consists of:

(i) That part of emitter current which reaches the collector terminal i.e., αIE

(ii) The leakage current leakage. This current is due to the movement of minority carriers
across base-collector junction on account of it being reverse biased. This is generally much
smaller than αIE

∴ Total collector current, IC = αIE + Ileakage

It is clear that if IE = 0 (i.e., emitter circuit is open), a small leakage current still flows in the
collector circuit. This Ileakage is abbreviated as ICBO, meaning collector-base current with emitter
open.

Figure 3: ICBO collector-base current with emitter open

∴ IC = αIE + ICBO

Now IE = IC + IB
∴ IC = α (IC + IB) + ICBO

or IC (1 − α) = α IB + ICBO
+ *!$%
or IC = I0 +
(-.+) (-.+)
Example 1. In a common base connection, E I = 1mA, IC = 0.95mA. Calculate
I
the value of B.

Solution 1.

IE = IB + IC

1 mA = IB + 0.95 mA

∴ IB = 1 mA − 0.95 mA = 0.05 mA
Example 2. In a common base connection, current amplification factor is 0.9. If the emitter
current is 1mA, determine the value of base current.

Solution 2.

Here, α = 0.9, IE = 1 mA
*!
Now, α=
*"

or, I1 = αI2 = 0.9 × 1 = 0.9 mA

Also, IE = IB + IC

∴ Base current, B I = IE − IC = 1 − 0.9 = 0.1 mA

Example 2. In a common base connection, the emitter current is 1mA. If the emitter circuit is
open, the collector current is 50 μA. Find the total collector current. Given that α = 0.92.

Solution 3.

Given, EI = 1 mA, α = 0.92, ICBO = 50 μA

IC = αIE + ICBO = 0.92×1+50×10−3=0.92+ 0.05 = 0.97 mA
Input and Output Characteristics of Common-Base Configuration:

To fully describe the behavior of a three-terminal device such as the common-base amplifiers
require two sets of characteristics—one for the driving point or input parameters and the
other for the output side.
The input set for the common-base amplifier as shown below relates an input current ( E ) I
to an input voltage ( VBE ) for various levels of output voltage ( VCB )

Figure 4: Input characteristics for a common-base silicon transistor amplifier

For silicon transistorVBE ≅ 0.7 V (if Base-Emitter in Forward Bias)

The output set relates an output current ( IC ) to an output voltage ( VCB ) for various
levels of input current ( IE ) as shown below:

Figure 5: Input characteristics for a common-base transistor amplifier

The output or collector set of characteristics has three basic regions of interest, as indicated in
Figure above the active, cutoff, and saturation regions.
The active region is the region normally employed for linear (undistorted) amplifiers. In
particular: In the active region the base–emitter junction is forward-biased, whereas the
collector–base junction is reverse-biased.

The active region is defined by the biasing arrangements of Fig.5 At the lower end of the active
I
region the emitter current ( E) is zero, and the collector current is simply that due to the reverse
I I
saturation current CBO, as indicated in Fig. 5. The current CBO is so small (micro-amperes)
I
in magnitude compared to the vertical scale of C (milliamperes) that it appears on virtually
the same horizontal line as CI = 0. The circuit conditions that exist when IE = 0 for the
common-base configuration.

I
Because of improved construction techniques, the level of CBO for general-purpose
transistors in the low- and mid-power ranges is usually so low that its effect can be ignored.
I
However, for higher power units CBO will still appear in the microampere range. In addition,
keep in mind that ICBO, like IS, for the diode (both reverse leakage currents) is temperature
sensitive. At higher temperatures the effect of ICBO may become an important factor since it
increases so rapidly with temperature.

As the emitter current increases above zero, the collector current increases to a magnitude
essentially equal to that of the emitter current as determined by the basic transistor-current
V
relations. Note also the almost negligible effect of CB on the collector current for the active
region. The relationship between IE and IC in the active region is:

IC ≅ IE
As inferred by its name, the cutoff region is defined as that region where the collector current
is 0 A. In addition: In the cutoff region the base–emitter and collector–base junctions of a
transistor are both reverse-biased.

The saturation region is defined as that region of the characteristics to the left of VCB = 0
V. The horizontal scale in this region was expanded to clearly show the dramatic change in
characteristics in this region. Note the exponential increase in collector current as the voltage
VCB increases toward 0 V. In the saturation region the base–emitter and collector–base
junctions are forward-biased.
COMMON-EMITTER CONFIGURATION:

Figure 6: Common-Emitter Configuration (n-p-n Transistor) Figure 7: Common-Emitter Configuration (p-n-p Transistor)

For Common-emitter configuration:

Input current = IB
Input voltage = VBE

Output current = IC
Output voltage= VCE

!"#$"# &"''()# *!
Current amplification factor, β= =
*)$"# &"''()# *$
Relation between β and α

IE = I C + I B

I2 I1 I0
= +
I1 I1 I1
1 1
=1 +
α β
- 34-
=
+ 3

3
α=
34-

Again,

IE = IC + IB

I2 I1 I0
= +
I1 I1 I1
- -
=1 +
+ 3

- 34-
=
+ 3

3
α=
34-

Again,

I2 = I1 + I0

I2 I1 I0
= +
I2 I2 I2
* *
1= α + $ . !
*! *"
 -
1 = α + .α
b
+
1- α =
b

+
β=
-. +

Expression for collector current:

I I
In common emitter configuration, B is the input current and C is the output current.
We know,

IE = IB + I C
Also,
IC = αIE + ICBO

ð IC = α(IC+IB) + ICBO

ðIC - α IC = αIB + ICBO

ðIC (1- α) = αIB + ICBO

+*$ *!$%
ð IC = +
-.+ -.5

Figure 8: ICEO collector-emitter current with base open

 I = 0 (i.e. base circuit is open), the collector current will be the current to the emitter.
If B
This is abbreviated as ICEO, meaning collector-emitter current with base open.
So, the equation will be when consider IB=0

*!$%
I1 = I12! =
-.+

*!$%
Substituting. to I12!
-.+

αI0
I1 = + I12!
1−α
+
I1 = β I0 + I12! [as β = ]
-. +

Input and Output Characteristics of Common-Emit Configuration:

Figure 9: Input characteristics for a common-emitter silicon transistor amplifier

 Figure 10: Output characteristics for a common-emitter transistor amplifier

The emitter, collector, and base currents are shown in their actual conventional current
direction. Even though the transistor configuration has changed, the current relations developed
earlier for the common-base configuration are still applicable. That is,

𝐼! = 𝐼" + 𝐼# 𝑎𝑛𝑑 𝐼" = 𝛼 𝐼!

For the common-emitter configuration the output characteristics are a plot of the output current
I
( C ) versus output voltage ( VCE ) for a range of values of input current ( IB ). The input
characteristics are a plot of the input current ( IB ) versus the input voltage ( VBE ) for a
range of values of output voltage ( VCE ).

You will recall that these were the same conditions that existed in the active region of the
common-base configuration. The active region of the common-emitter configuration can be
employed for voltage, current, or power amplification.

The cutoff region for the common-emitter configuration is not as well defined as for the
common-base configuration.

I
Note on the collector characteristics of output characteristic plot that C is not equal to zero
I
when B is zero. For the common-base configuration, when the input current E was equal to I
I
zero, the collector current was equal only to the reverse saturation current CEO , so that the
I = 0 and the voltage axis were, for all practical purposes, one.
curve E
Example 4. Considering circuit configurations 1 and 2 (at room temperature) for an NPN
transistor, find the value of α. Given, IC = 1 mA. Find exact values for IE and IB

Figure 11

Solution 4.

When the emitter circuit is open (Circuit Configuration 1), the collector-base junction is
reverse biased and a small leakage current ICBO flows due to minority carriers.

ICBO = 0.2 μA (given)

When base is open (Circuit Configuration 2), a small leakage current ICEO flows due to
minority carriers.

ICEO = 20 μA (given)

We know,

𝐼!$#
𝐼!"# =
1−𝛼

0.2
20 =
1−𝛼

α = 0.9999
Example 5. Considering circuit in figure below for an NPN transistor.

Figure 12
Given, IC = 1 mA. Find exact values for IE and IB. Students must need to consider the small
leakage current flows due to minority carriers

Solution 5:

α= β/(1+β) = 0.992 ;

ICBO = (1-α)ICEO = 2.4 µA

IC = αIE + ICBO

=> αIE = IC - ICBO = (1000 – 2.4) µA

=> IE = 997.6/.992 = 1.005 mA,

IB = IE -IC = 1.005 – 1 = 0.005 mA = 5 µA

Example 6. What are the three regions of operation of BJT? What are the biasing conditions
in BJT junctions for each region? For the circuit below determine the biasing conditions for
the junctions and the region of operation for the BJT by checking against all three regions of
operation.

Figure 13
Solution 6.

3 Regions of Operation

Active
Operating range of the amplifier:
In the active region the base–emitter junction is forward-biased, whereas the collector–base
junction is reverse-biased.

Cutoff
The amplifier is basically off. There is voltage but little current.
In the cutoff region the base–emitter and collector–base junctions of a transistor are both
reverse-biased.

Saturation
The amplifier is full on. There is little voltage but lots of current.
In the saturation region the base–emitter and collector–base junctions are forward-biased

If we assume that the BJT is operating in Cuttoff region, then B-E junction should be reverse
biased and IB ≅ 0 A.

Now,

VBB – IBRB – VBE – IERE = 0

VBE = VBB – IBRB – (1+β)IBRE = 2.7 V – 0 V – 0V= 2.7 V

We can see that when IB = 0, VBE is greater than 0.7 V, thus in Forward bias (for NPN
transistor). So the BJT is not operating in cutoff region

Now,

If BJT is in Active or Saturation region B-E Junction should be Forward Bias, thus,
VBE≅0.7V (for NPN Transistor)

VBB – IBRB – VBE – IERE = 0

VBB – IBRB – VBE – (1+β)IBRE = 0

2.7 V – IB X 3 kΩ – 0.7 V – 101 X IB X 1 kΩ = 0

IB (3 +101) kΩ = 2 V

IB = 2V/(104 kΩ) = 19.23 µA

IC = βIB = 100 X 19.23 µA = 1.923 mA

And

VCC - ICRC - VCE - IERE = 0

 VCE = VCC - ICRC - ICRE
VCE = 10 V – 1.923 mA X 2 kΩ - 1.923 mA X 1 kΩ = 10 V - 1.923 mA (2 + 1) kΩ = 10 V -
1.923 mA X 3 kΩ

VCE = 4.231 V

VCB = VCE – VBE = 4.231 V – 0.7 V = 3.531 V

We can see here, that VCB value is positive, so the C-B Junction is in reversed Bias (for NPN
Transistor).

If we assume B-E Junction is in FB then we can find that C-B is RB, so the BJT is not
operational in saturation region rather operating in active region.

Example 7. For the BJT to operate in the saturation region in the following circuit, determine
the minimum value of VBB

Figure 14

Solution 7.

When transistor first goes into saturation, we can assume that the collector shorts to emitter
(i.e. VCE = 0) but the collector current is still β times the base current.

VCC – IC(RC+RE) – VCE = 0

IC(sat)(2+1)kΩ = (10 – 0) V

IC(sat) = (10 V)/(3 kΩ) = 3.33 mA

IB corresponding to IC(sat) is

IB = (3.33 mA)/β= (3.33 mA)/100 = 0.033 mA

KVL in BE loop

VBB – IBRB – VBE – IERE = 0

VBB = IBRB + VBE + IERE = 0.033 mA X 3 kΩ + 0.7 V + 3.33 mA X 1 kΩ = 4.129 V

Therefore, for VBBmin for the BJT to work in saturation is 4.129 V.