(Unit-1)

PN Junction Diode
Ideal Diode, Diode as switch

Digital Electronics and Computer Architecture

B.E.-CSE 1st Sem.

Department of Interdisciplinary Courses in Engineering (DICE)

&
Department of Computer Science and Engineering

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 PN Junction Diode
A p–n junction is a boundary or interface between two types of semiconductor
material, p-type and n-type, inside a single crystal of semiconductor. It is created
by doping.

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 Formation of depletion layer

At the interface of two semiconductors the excess electrons in the

combine with the excess holes in the P region.
N region loses its electrons and have immobile positive ions.
P region accepts the electrons and have immobile negative ions.
At one point , the migratory action is stopped. And depletion region
is created.

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 PN Junction Diode
⚫ An additional electrons from the N region are repelled by the net
negative charge of the p region.
⚫ An additional holes from the P region are repelled by the net
positive charge of the n region.
⚫ creation of a thin layer of each side of the junction ……….which
is depleted (emptied) of mobile charge carriers…. This is known
as DEPLETION LAYER have Thickness is of the order of
10-6meter.
⚫ The depletion layer contains no free and mobile charge carriers but
only fixed and immobile ions.
⚫ Its width depends upon the doping level..
⚫ Heavy doped……..thin depletion layer
⚫ lightly doped……..thick depletion layer
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 PN Junction Diode
⚫ The electrons in the N region have to climb the potential hill in
order to reach the P region

⚫ Electrons trying to cross from the N region to P region experience

a retarding field of the battery and therefore repelled. Similarly for
holes from P region.

⚫ Potential thus produced are called ..potential barrier

⚫ Ge..0.3 V Si ..0.7V

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PN Junction Diode

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Forward Biased PN Junction

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 PN Junction Diode
⚫ It forces the majority charge carriers to move across the
junction ….decreasing the width of the depletion layer.
⚫ Once the junction is crossed, a number of electrons and
the holes will recombine .
⚫ For each hole in the P section that combines with an
electron from the N section, a covalent bond breaks and
an electron is liberated which enters the positive terminal
⚫ Thus creating an electron hole pair.
⚫ Current in the N region is carried by ….electrons
⚫ Current in the P region is carried by …. Holes.

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Reverse Biased PN Junction

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 PN Junction Diode
⚫ It forces the majority charge carriers to move across the
junction ….decreasing the width of the depletion layer.
⚫ Once the junction is crossed, a number of electrons and
the holes will recombine .
⚫ For each hole in the P section that combines with an
electron from the N section, a covalent bond breaks and
an electron is liberated which enters the positive terminal
⚫ Thus creating an electron hole pair.
⚫ Current in the N region is carried by ….electrons
⚫ Current in the P region is carried by …. Holes.

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V-I Characteristics

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 PN Junction Diode
VI characteristics of P-N junction diodes is a curve
between the voltage and current through the circuit.
Voltage is taken along the x-axis while the current is taken
along the y-axis. With the help of the curve, we can
understand that there are three regions in which the diode
works.
Zero bias
•Forward bias
•Reverse bias
When the P-N junction diode is in zero bias condition,
there is no external voltage applied and this means that the
potential barrier at the junction does not allow the flow of
current. 12
 PN Junction Diode
• When the P-N junction diode is in forward bias condition, the p-type is
connected to the positive terminal while the n-type is connected to the negative
terminal of the external voltage.

• When the diode is arranged in this manner, there is a reduction in the potential
barrier. For silicone diodes, when the voltage is 0.7 V and for germanium
diodes, when the voltage is 0.3 V, the potential barriers decrease, and there is a
flow of current.

• When the diode is in forward bias, the current increases slowly, and the curve
obtained is non-linear as the voltage applied to the diode overcomes the
potential barrier.

• Once the diode overcomes the potential barrier, the diode behaves normally,
and the curve rises sharply as the external voltage increases, and the curve
obtained is linear.
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 PN Junction Diode
• When the P-N junction diode is in negative bias condition, the
p-type is connected to the negative terminal while the n-type is
connected to the positive terminal of the external voltage. This
results in an increase in the potential barrier. Reverse saturation
current flows in the beginning as minority carriers are present in
the junction.
• When the applied voltage is increased, the minority charges will
have increased kinetic energy which affects the majority charges.
This is the stage when the diode breaks down. This may also
destroy the diode.
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IdealDiode

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 Diode as Switch

An ideal diode just functions as a switch. When an ordinary switch

is turned on or closed, both its contacts combine together, due to
which its resistance becomes zero. However, when the switch is
turned off (open), an infinite resistance takes place between
contacts due to the opening of the contacts.
Exactly the same way, when a diode is forward biased, it functions
as a closed switch i.e. it practically becomes a diode short circuit.
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 Diode as Switch
However, when a diode is reversed bias, it offers unlimited resistance, due to
which the flow of currents stops completely from within it. Thus, an ideal diode
(a diode with no forward drop, nor a reverse flow of current, further with no
breakdown on such a diode) is a device or instrument that, just like a switch, acts
as a short circuit in the forward direction and as an open circuit in the reverse
direction.
Thus, the ideal diode is considered as a bi-stable or two-directional switch, which
closes in the forward direction and opens in the reverse direction. Thus, it has two
conditions i.e. on or off. In case of high frequency, as a diode turns on or off (due
to a rapid change in direction of the cycle)(i.e. it has to change consistently from a
conducting condition to a non-conducting condition).
Thus, it functions as a switch on high frequency as well. Remember, the on /off of
a diode depends on the frequency being provided to the power supply. Suppose, if
the value of supply frequency is 50 cycles per second, it turns on or off
continuously 50 times. Due to this characteristic of a diode, it assumes the
capacity of a switch.

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Thank you