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Lecture 1 Merged

1. The document discusses power electronics devices and their characteristics. It focuses on power diodes, describing their V-I characteristics and recovery time parameters. 2. Power diodes have non-ideal characteristics compared to ideal diodes. Their forward voltage drop is approximately 0.7 V and reverse leakage current is not zero. 3. Recovery time is an important parameter for power diodes. It consists of turn-on time and turn-off time during the transition from forward to reverse biased state or vice versa. Faster recovery diodes have shorter recovery times.

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0% found this document useful (0 votes)
23 views135 pages

Lecture 1 Merged

1. The document discusses power electronics devices and their characteristics. It focuses on power diodes, describing their V-I characteristics and recovery time parameters. 2. Power diodes have non-ideal characteristics compared to ideal diodes. Their forward voltage drop is approximately 0.7 V and reverse leakage current is not zero. 3. Recovery time is an important parameter for power diodes. It consists of turn-on time and turn-off time during the transition from forward to reverse biased state or vice versa. Faster recovery diodes have shorter recovery times.

Uploaded by

Areej Ahmad
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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EE-502

Power Electronics

B.Tech Vth Semester


Lecture- 01
01 August 2023
By:

Dr. Ahteshamul Haque


Department of Electrical Engineering
Faculty of Engineering & Technology
Jamia Millia Islamia ( A Central University), New Delhi
What is Power Electronics?
Power

Control Digital
Theory Electronics
Power
Electronics

Circuit Analog
Analysis Electronics
Why Power Electronics is
important?
Importance Can be understood from its
application
CONNECTIVITY OF COMMON MAN
ARTIFICIAL LIGHTING
Power

Control Digital
Theory Electronics
Power
Electronics

Circuit Analog
Analysis Electronics
Jobs in Power Electronics Industry
Invention and Advancements in Power
Eectronics leads to emergence of new areas
like Renewable energy etc
EE-502
Power Electronics

B.Tech Vth Semester


Lecture- 02
By:

Dr. Ahteshamul Haque


Department of Electrical Engineering
Faculty of Engineering & Technology
Jamia Millia Islamia ( A Central University), New Delhi
What we will study in This
Course of Power Electronics?
UNIT-1
UNIT-1
Introduction, Devices: Diodes-silicon, fast recovery, Schottky
diode, SCR,TRIAC, SCS, GTO, PUT, SUS, CUJT, LASCR,
Mosfet, IGBT with their V-I characteristics. SCR: Operating
principle, Gate Characteristics, Two transistor model, over-
current and over voltage protection, snubber circuits, methods
of turning on (triggering) and turning off (commutation).
UNIT-11
UNIT-11
Half-wave and full-wave controlled rectifiers with resistive and
reactive load, battery load Freewheeling diode. Detailed
derivation of rms , average value, harmonic factor,
displacement factor, THD, crest factor. Three phase half wave
and full wave controlled rectifiers. Effect of Source impedance.
UNIT-111
UNIT-111
Voltage-driven inverter, current-driven inverter, Single-phase
inverter with resistive load, inductive load: Bridge, Parallel,
Centre tapped. Mc-Murrey-Bedford inverter, Zero current
switching(ZCS), Zero voltage Switching (ZVS). Introduction of
resonant inverters. Three phase bridge inverter, 120-180
degree conduction, Various PWM Techniques..
UNIT-1V
UNIT-1V
Principle of chopper, Step down-Step up chopper, Step down
chopper with RL load without linear approximation, Chopper
classification: First Quadrant, Second Quadrant, Third and
Fourth Quadrant, Fourth Quadrant, All Four Quadrant
Chopper. Buck, Boost, Buck-boost DC-DC converters. Morgan
and Jones Chopper, Various PWM Techniques..
UNIT-V
UNIT-V
AC Voltage Controllers: Single and three phase ac voltage
controllers. Cyclo-converters: Single phase to single-phase,
three-phase to single-phase, three-phase to three-phase
cyclo-converter circuit and their operation, Advance Topics:
Simulation Tools, AI for Power Electronics.
References
Reference: “Power Electronics, Circuit, Devices and Analysis” 4th
Edition, M. H. Rasheed
UNIT-1
CHARACTERISTIC OF ELECTRICAL SWITCH
CHARACTERISTIC OF ELECTRICAL SWITCH

Types of Switches:
- Ideal Switch

- Practical Switch
IDEAL SWITCH
CHARACTERISTICS:
1. It should have zero resistance or zero voltage drop in ON state and
infinite resistance or zero current during OFF state. In other words,
power loss across the switch should be zero both in ON and OFF state.

2. It should be closed and open instantaneously independent of current


through it.

3. In the closed state, it should conduct current in one direction only. The
resistance to reverse direction must be infinite.
IDEAL SWITCH
DURING ON STATE:

Isw = switch current, Vsw = voltage across switch, and


Psw = Switch power loss
Vsw = 0 Volt (always)
Isw = value depending upon the circuit condition
Psw = Vsw × Isw = 0 Watt
turn on time, ton = 0 seconds
IDEAL SWITCH
DURING OFF STATE:

Vsw = value depending upon the circuit condition


Isw = 0 Amp (always)
Psw = Vsw × Isw= 0 Watt
turn off time, toff = 0 seconds
IDEAL SWITCH
PRACTICAL SWITCH

1. A practical switch has non-zero resistance in ON state and


finite resistance in the OFF state.

2. The time taken to the switch to change from OFF state to ON


state i.e. turn ON time and turn OFF time is not same.
PRACTICAL SWITCH
DURING ON STATE:

Vsw ≠ 0 Volt
Isw = value depending upon the circuit condition
Psw = Vsw × Isw ≠ 0 Watt
turn on time, ton ≠ 0 seconds
PRACTICAL SWITCH
DURING OFF STATE:

Vsw = value depending upon the circuit condition


Isw ≠ 0 Amp
Psw = Vsw × Isw ≠ 0 Watt
turn off time, toff ≠ 0 seconds
PRACTICAL SWITCH

ton = The time taken to reach steady-state ON condition from the steady-state OFF condition.
TON = The time during which the switch remains in steady-state ON condition.
toff = The time taken to reach steady-state OFF condition from the steady-state ON condition.
TOFF = The time during which the switch remains in steady-state OFF condition.
T = Time period
T = ton + TON + toff + TOFF
LOSSES IN PRACTICAL SWITCH
1. ON-state loss
The power loss during the ON state of the switch is known as
ON state loss. It is given by
Ps-ON = Vs-ON × Is-ON
2. OFF-state loss
The power loss during the OFF state of the switch is known as
OFF state loss. It is given by
Ps-OFF = Vs-OFF × Is-OFF
LOSSES IN PRACTICAL SWITCH
3. Switching loss
Some power loss occurs in the switch when it changes state from
ON to OFF state or OFF to ON state. These losses are combined
together are called switching loss. It depends upon the turn ON and
turn OFF time of the switch and also depends on the frequency of
switching. As the turn On or turn OFF time increases, power loss
increases. As the switching frequency increases, power loss
increases.
LOSSES IN PRACTICAL SWITCH
SWITCH IN POWER ELECTRONICS CIRCUIT
EE-502
Power Electronics

B.Tech Vth Semester


Lecture- 03
By:

Dr. Ahteshamul Haque


Department of Electrical Engineering
Faculty of Engineering & Technology
Jamia MilliaB.Tech
Islamia ( A Central University), New Delhi
(Electrical) Vth Semester- EE-502 : Power Electronics-
03rd Lecture: By Dr. Ahteshamul Haque
UNIT-1 (Contd----)

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
CHARACTERISTIC OF ELECTRICAL SWITCH

Types of Switches:
- Ideal Switch

- Practical Switch

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Power Diodes

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Power Diodes

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Power Diodes
The ν–i characteristics shown in Figure 2.2a can be
expressed by an equation known as Schockley diode
equation, and it is given under dc steady-state operation
by

VT in Eq. (2.1) is a constant called thermal voltage and it


is given by

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Power Diodes
For VD > 0.1 V, ID ~ IS, and Eq. (2.1) can be approximated
within 2.1% error to

If VD is negative and |VD| VT , which occurs for VD < −0.1 V,


the exponential term in Eq. (2.1) becomes negligibly small
compared with unity and the diode current ID becomes

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Power Diodes

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Power Diodes
The storage charge, which is the area
enclosed by the curve of the recovery
current, is approximately

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Power Diodes
If tb is negligible as compared to ta, which is
usually the case (although Figure 2.3a
depicts tb > ta), trr ≈ ta , and Eq. (2.9)
becomes

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Power Diodes

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Power Diodes

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Power Diodes

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Types of Power Diodes:

A)- General Purpose Diode


Whose reverse recovery time is of the order of millisecond.

B)- Fast Recovery Diode


Whose reverse recovery time is of the order of nanosecond.

C)- Schottkey Diode


Whose reverse recovery time is almost negligible.

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Data Sheet: General Purpose Diode

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Data Sheet of Fast Recovery Diode

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Data Sheet

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Data sheet
Schottkey Diode

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
Power Electronics Engineer Should Choose right diode for the
given application in design other wise----------

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 03rd Lecture: By Dr. Ahteshamul Haque
Figure 2.10 Two series-connected diodes with reverse
bias.
Figure 2.11 Series-connected diodes with steady-state
voltage-sharing characteristics.
Equations 2.12 and 2.13 Steady-state Voltage-
sharing

• Because the total leakage current must be shared by a


diode and its resistor,

• Equation (2.12) gives the relationship between R1 and


R2 for equal voltage sharing as
Equations 2.14 and 2.15 Steady-state Voltage-
sharing

• The values of VD1 and VD2 can be determined from Eqs.


(2.14)

• and (2.15):
Figure 2.15 Diode circuit with an RC load.
Equations 2.20 and 2.21 Diode Switched RC Load

• The solution of Eq. (2.18) gives the charging current i


as

• The capacitor voltage νc is


Equations 2.22 and 2.23 Diode Switched RC Load

• The rate of change of the capacitor voltage is

• The initial rate of change of the capacitor voltage (at t


= 0) is obtained from Eq. (2.22)
Figure 2.16 Diode circuit with an RC load.
Figure 2.17 Diode circuit with an RL load.
Equations 2.25 and 2.26 Diode Switched RL Load

• With initial condition i(t = 0) = 0, the solution of Eq.


(2.24) (which is derived in Appendix D, Eq. D.2) yields

• The rate of change of this current can be obtained from


Eq. (2.25) as
Equations 2.27 and 2.28 Diode Switched RL Load

• The initial rate of rise of the current (at t = 0) is


obtained from Eq. (2.26):

• The voltage νL across the inductor is


EE-502
Power Electronics

B.Tech Vth Semester


Lecture- 04
By:

Dr. Ahteshamul Haque


Department of Electrical Engineering
Faculty of Engineering & Technology
Jamia MilliaB.Tech
Islamia ( A Central University), New Delhi
(Electrical) Vth Semester- EE-502 : Power Electronics-
03rd Lecture: By Dr. Ahteshamul Haque
UNIT-1 (Contd----)

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Power Diodes

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Thyristor (SCR)

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Thyristor (SCR)

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Thyristor (SCR)

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Thyristor (SCR)

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Thyristor (SCR)
For transistor Q1, the emitter current is the
anode current IA, and the collector current
IC1 can be found from Eq. (9.1):

For transistor Q2, the collector current IC2 is

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Thyristor (SCR)
By combining IC1 and IC2, we get

For a gating current of IG, IK = IA + IG and


solving Eq. (9.4) for IA gives

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Thyristor (SCR)

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics-


03rd Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
1. Thyristor (SCR) Turn-on characteristics.

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 04th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
TYPES OF POWER ELECTRONICS DEVICES

UN-CONTROLLED POWER ELECTRONICS DEVICES


The Devices whose Turn on AND Turn Off cannot be controlled from its
gate terminal . Example: DIODE, DIAC

SEMI CONTROLLED POWER ELECTRONICS DEVICES


The Devices whose Turn on can be controlled from its gate terminal not
turn off. Example: SCR, TRIAC etc

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
TYPES OF POWER ELECTRONICS DEVICES

FULLY CONTROLLED POWER ELECTRONICS DEVICES

The Devices whose Turn on AND Turn Off can be controlled from its gate
terminal not turn off. Example: MOSFET IGBT etc

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
SCR Turn ON Methods

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 06th Lecture: By Dr. Ahteshamul Haque
SCR Turn ON Methods

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 06th Lecture: By Dr. Ahteshamul Haque
SCR Turn ON Methods

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 06th Lecture: By Dr. Ahteshamul Haque
SCR Turn ON Methods

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 06th Lecture: By Dr. Ahteshamul Haque
SCR Turn ON Methods

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 06th Lecture: By Dr. Ahteshamul Haque
SCR Turn ON Methods

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 06th Lecture: By Dr. Ahteshamul Haque
EE-502
Power Electronics

B.Tech Vth Semester


Lecture- 05
By:

Dr. Ahteshamul Haque


Department of Electrical Engineering
Faculty of Engineering & Technology
Jamia Millia Islamia ( A Central University), New Delhi
B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
UNIT-1 (Contd----)

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
SCR Turn ON Methods
SCR Turn ON Methods

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
TRIAC

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
GTO

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
FET CONTROLLED THYRISTOR

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
EMITTER TURNOFF THYRISTOR

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
DIAC

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
DIAC

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
DIAC

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
Power Electronics Devices
DIAC

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 05th Lecture: By Dr. Ahteshamul Haque
EE-502
Power Electronics

B.Tech Vth Semester


Lecture- 06
By:

Dr. Ahteshamul Haque


Department of Electrical Engineering
Faculty of Engineering & Technology
Jamia Millia Islamia ( A Central University), New Delhi
B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 6th Lecture: By Dr. Ahteshamul Haque
UNIT-1 (Contd----)
SCR Turn OFF Methods/Commutation
SCR Turn OFF Methods/Commutation
SCR Turn OFF Methods/Commutation
SCR Turn OFF Methods/Commutation
SCR Turn OFF Methods/Commutation
SCR Turn OFF Methods/Commutation
SCR Turn OFF Methods/Commutation
SCR Turn OFF Methods/Commutation
SCR Turn OFF Methods/Commutation
Class C Commutation
In this commutation method, the main SCR (which is to be commutated) is connected in series with
the load and an additional or complementary SCR is connected in parallel with the main SCR. Hence,
this method is also called as Complementary Commutation.
In this, SCR turns OFF with a reverse voltage of a charged capacitor. The figure below shows the
complementary commutation with appropriate waveforms.

B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 06th Lecture: By Dr. Ahteshamul Haque
EE-502
Power Electronics

B.Tech Vth Semester


Lecture- 07
By:

Dr. Ahteshamul Haque


Department of Electrical Engineering
Faculty of Engineering & Technology
Jamia Millia Islamia ( A Central University), New Delhi
B.Tech (Electrical) Vth Semester- EE-502 : Power Electronics- 7th Lecture: By Dr. Ahteshamul Haque
UNIT-1 (Contd----)
Power Electronics Devices
Numerical
The SCR of has gate trigger voltage VT =
0.7V, gate trigger current IT = 7 mA and
holding current IH = 6 mA.
(i) What is the output voltage when the
SCR is off ?
(ii) What is the input voltage that
triggers the SCR ?
(iii) If VCC is decreased until the SCR
opens, what is the value of VCC ?
Power Electronics Devices
Numerical
Power Electronics Devices
Numerical
The triggering circuit of SCR is given in Fig. 1.
The SCR requires a gate current of 10 mA, for
guaranteed turn on. Find the value of R required
for the SCR to turn ON reliably under all
conditions of Vb.
of SCR is given in
Fig. 1. The SCR requires a
gate current of 20
mA, for guaranteed turn
on. Find the value of R
required for the SCR to turn
Power Electronics Devices
The latching current of SCR shown in Fig. 2
is 50 mA. The duration of the firing pulse is
50 us. Will the SCR get fired?
The latching current of SCR shown in Fig. 2 is 50 mA. The duration
of the firing pulse is 50 us. Will the SCR get fired?
Nemericals
An a.c. voltage v = 240 sin314 t is applied to an SCR half-wave rectifier. If the SCR
has a forward breakdown voltage of 180 V, find the time during which SCR remains
off.

The SCR will remain off till the voltage across it reaches
180 V. This is shown in Fig.2. Clearly, SCR will remain off
for t second.
Power Electronics Devices
The SCR of Fig has gate trigger voltage VT = 0.7V, gate
trigger current IT = 7 mA and holding current IH = 6
The latching current of SCR shown in Fig. 2
mA.
(i) What is the output voltage when the SCR is off ?
(ii) What is the input voltage that triggers the SCR ?
is 50 mA. The duration of the firing pulse is
(iii) If VCC is decreased until the SCR opens, what is
the value of VCC ?
50 us. Will the SCR get fired?

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