Aecl Exp6, 06
Aecl Exp6, 06
Experiment No: 6
Title: Study of CB and CC BJT characteristics (Spice simulation)
COs to be achieved:
CO1: Analyze BJT transistor circuits for DC and AC operations
Theory:
Transistors are three terminal active devices made from different semiconductor materials that can act
as either an insulator or a conductor by the application of a small signal voltage. The transistor’s ability
to change between these two states enables it to have two basic functions: “switching” (digital
electronics) or “amplification” (analogue electronics). Then bipolar transistors have the ability to
operate within three different regions:
1. Active Region: the transistor operates as an amplifier and IC = β*IC
2. Saturation Region: the transistor is “Fully-ON” operating as a switch and IC = IC(saturation)
3. Cut-off Region: the transistor is “Fully-OFF” operating as a switch and IC = 0
current. Generally, the base current IB will remain small when compared to the emitter current IE and
the collector current IC
IE = IC + IB
The only major difference between the NPN and PNP transistors are their majority charge carriers.
The majority charge carriers of NPN transistors are electrons and the majority charge carriers of PNP
transistors are holes. All other working principles and their doping ratio will remain the same for
both NPN and PNP transistors.
In the transistor, if the collector current increases, then the collector junction temperature will
increase. So, the resistance provided by the collector also gets reduced. As a result the collector
current increases. This phenomenon is known as the thermal runway in BJT transistors.
Circuit Diagram:
NPN Common Base BJT circuit
Stepwise-Procedure:
1. Open a new Schematic and create it as per above circuit diagram.
2. Note down the parameters as per the observation table.
3. Record input and output characteristics for CB & CC configuration. Take npn BJT as BC547B
a) Plot input characteristic VBE Vs IE by dc analysis, vary VEE from 0V to 2V in steps of
0.1Volts and vary VCC from 5V to 15V in steps of 5V (CB configuration)
b) Plot output characteristic VCB Vs IC by dc analysis, vary VCC from 0V to 10V in steps of
0.1Volts and vary VEE from 0 to 2V in steps of 0.5V (CB configuration)
c) Plot input characteristic VCB Vs IB by dc analysis, vary VBB from 0V to 2V in steps of
0.1Volts and vary VEE from 6.5V to 6.8V in steps of 0.3V (CC configuration)
d) Plot output characteristic VCE Vs IE by dc analysis, vary VEE from 0V to 10V in steps of
0.1Volts and vary VBB from 0.5V to 2V in steps of 0.5V (CC configuration)
Observation Table:
1. CB input characteristics
(Keeping VCC constant means we are keeping VCB constant since, VB = 0, VCB = VC and VC =
VCC – IC RC)
2. CB output characteristics
(Keeping VEE constant means we are keeping IE constant since, VB = 0, VE = IE RE, as VEE and RE
are fixed, IE is fixed)
3. CC input characteristics
(Keeping VEE constant means we are keeping VCE constant since, VC = 0, VCE = -VE )
4. CC output characteristics
(Keeping VBB constant means we are keeping IB constant)
Calculation:
Show here calculations of values of Rin and Rout which are obtained from various characteristics. Do
handwritten calculations on a blank page and upload images of those pages here.
Waveform
CB Input characteristics:
Circuit:
MEAS STATEMENT:
IE vs VBE graph:
VCC AT 10V:
VCC AT 15V:
CB Output Characteristic
Schematic:
MEAS ST:
WHEN VEE=1V:
WHEN VEE=2V:
CC input characteristics:
IB vs VCB graph –
For VEE=6.5V
IB vs VCB graph
FOR VEE=6.8V
CC output characteristics
(Keeping VBB constant means we are keeping IB constant)
SCHEMATIC:
.MEAS STATEMNET:
GRAPH IE VS VCE:
WHEN VBB=0V
WHEN VBB=1V:
WHEN VBB=2V: