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Five Parameter Modelling and Simulation of Solar PV Cell

Conference Paper · March 2015

DOI: 10.1109/EnergyEconomics.2015.7235079

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 Five Parameter Modelling
M and Simulatiion of Solar
PV Cell
Adil Sarwar A.Q. Ansari
Mashhood Hasan
Dept. of Electrical Engineering, Deept. of Electrical Engineering
Dept. of Electrical Engineering, Jamia Milia Islamia
Aligarh Muslim University
GCET,G Noida, India N. Delhi, India
Aligarh, India
[email protected] [email protected]
[email protected]

Abstract—The present work deals wiith developing a II. 5-PARAMETER MODEEL OF A SOLAR PV CELL
comprehensive simulation model for solar PV V cell under partial A solar cell model is reprresented by a constant current
shading conditions. The five parameter mod del, which is both source and a diode as shown in i Figure 1. The light generated
simple to develop and analyze has been taken for
f carrying out the
current, IL, is the amount of cuurrent produced by the electron-
modeling.
hole pairs generated by thhe impinging sunlight. This
Keywords—Solar Photovoltaic, partial shadiing, MATLAB. phenomenon is called photovooltaic effect. IL depends on the
intensity of the incident solar light,
l characteristics of the solar
I. INTRODUCTION panel, and the ambient temp mperature. The most important
Growing energy demand and soaringg prices of fossil electrical characteristics of a PV
V cell module/array are [1]:
fuels along with concern about degrading environment have a. Short Circuit current (ISC):
) Usually this is associated with
generated enormous amount of interest in the utilization of the light generated currennt IL and is considered the same
renewable energy sources. Power generation g from for normal levels of solarr irradiance. It increases slightly
photovoltaic (PV) has seen a rapid growth inn the last few years with increasing temperatuure. It is directly proportional to
leading to extensive research on using sollar energy. A PV the incident optical powerr.
system has the advantages of low maintenaance cost, absence b. Open circuit voltage (VOC): It is logarithmically
of moving or rotating parts and hence no wear w and tear and dependent on the solar irrradiance. With the increase in
almost no environmental impact [1], [2]. Thhe PV system has temperature there is an inncrease in saturation current and
significant potential commercially. Despite its
i rapid growth in results in reduction of the open circuit voltage.
past few years, there are several challengees that hinder the
commercial use of PV system. These includde high installation The behaviour of photovoltaiic (PV) cells can be modelled
cost of PV power generation systems annd its low energy with an equivalent circuit shhown in Figure 1. This circuit
conversion ef¿ciency (solar to electricity). A PV system is includes a series resistance RS and a diode in parallel with a
generally operated to extract maximum poower from the PV shunt resistance, Rsh. “V” repreesents the voltage at the load.
source. Maximum power-point tracking (M MPPT) is generally Series resistance occurs due to::
employed, which requires power electronic converters
c such as i. Movement of current through the emitter and base of
dc–dc converter and/or dc-ac inverter in ordder to optimize the the solar cell.
utilization of PV systems. The objective of MPPT
M is to extract ii. Contact resistance beetween the metal contact and
maximum power generated by the PV systeems under varying silicon.
condition of temperature and solar insoolation. A major iii. Resistance of the top and
a the rear metal contacts.
challenge in solar PV based systems is to taackle the nonlinear Shunt resistance mostlly arises due to:
current–voltage (IíV) characteristics of PV cell/array, leading i. Manufacturing defectts, rather than poor solar cell
to the tracking of a unique maximum poweer point (MPP) on design.
its power–voltage (PíV) characteristic curvve. Generally, the ii. Leakage of current thrrough the cell, around the edges
PV panels are connected in series (to enhaance the PV array of the device and between
b contacts of different
voltage) and parallel (to enhance the PV currrent) so as to meet polarity.
the load power demand. . Since PV moddule has nonlinear
characteristics, it is necessary to model it for
f the design and
simulation of maximum power point trackinng (MPPT) for PV
system applications. Mathematical modelingg of PV module is
being continuously updated to enable reseearcher to have a
better understanding of its working. [3]- [7]

Fig. 1 : Equivalent circuit reprresenting the 5-Parameter model

978-1-4673-7492-7/15/$31.00 ©2015 IEEE

 informations are the short cirrcuit current (Isco), open circuit
Application of Kirchhoff's Current Law (E Equation 1) on the voltage (Voco), current and vooltage at the maximum power
equivalent circuit results in the current flowinng to the load. point (Impo and Vmpo, respectivvely), and the slope of the I-V
curve at the short circuit pointt. The subscript “o” indicates at
‫ ܫ‬ൌ ‫ܫ‬௅ െ ‫ܫ‬஽ െ ‫ܫ‬ௌு (1) reference conditions. This infoormation is usually provided by
the manufacturer.
Figure 2 shows the shape of the I-V curve of a typical solar To find the reference parameteers we utilize following relations
PV cell. [4]:
At short circuit current: I=Isco, V=0
At open circuit voltage: I=0, V= =Voco
At the maximum power point: I=I I mpo, V=Vmpo (3')
At the maximum power point: dP/dVmp=0
At short circuit: dIsc/dV= -1/Rshh,ref

Utilizing equations (1)-(3) and (3') we obtain the following

relations.
౒శ౅Ǥ౎౩ǡೝ೐೑
ೌೝ೐೑ ௏ାூǤோೞǡೝ೐೑
‫ ܫ‬ൌ ‫ܫ‬௅ǡ௥௘௙ െ ‫ܫ‬଴ǡ௥௘௙ ቈ‡ െ ͳ቉ Ȃ (4)
ୖ౩౞ǡ౨౛౜

಺ೞ೎బ Ǥೃೞǡೝ೐೑
೑
ೌೝ೐೑ ூೞ೎బ Ǥோೞǡೝ೐೑
‫ܫ‬௦௖ ൌ ‫ܫ‬௅ǡ௥௘௙ െ ‫ܫ‬଴ǡ௥௘௙ ൥‡ െ ͳ൩ െ (5)
ୖ౩౞ǡ౨౛౜

Figure 2: I-V and P-V characteristics of a PV cell ೇ೚೎

௏೚೎
Ͳ ൌ ‫ܫ‬௅ǡ௥௘௙ െ ‫ܫ‬଴ǡ௥௘௙ ሾ‡ೌೝ೐೑ െ ͳሿ െ (6)
ୖ౩౞ǡ౨౛౜
If the diode current and the current through
t the shunt
resistance (IDand ISH, respectively) are wriitten in expanded ೇ೘೛బ శ಺೘೛బ
೘ Ǥೃೞǡೝ೐೑
form, Equation (2) is obtained. Equationn (3) is used to ೌೝ೐೑
ܸ௠௣௢ ൅ ‫ܫ‬௠௣௢ Ǥ ܴ௦ǡ௥௘௙
‫ܫ‬௠௣௢ ൌ ‫ܫ‬௅ǡ௥௘௙ െ ‫ܫ‬௢ǡ௥௘௙ ൥݁ ൩െ
calculate the power (P).  ୱ୦ǡ௥௘௙

ೇశ಺ೃೄ
‫ ܫ‬ൌ ‫ܫ‬௅ െ ‫ܫ‬଴ ൤݁ ೌ െ ͳ൨ െ
௏ାூோೄ
(2) (7)
ோೄಹ
ௗሺூ௏ሻ
ൌͲ (8)
ܲ ൌ ‫ܸܫ‬ (3) ௗ௏

ௗூ ଵ
The five parameters (from which the 5--Parameter model ൌെ (9)
ௗ௏ೞ೎ ோೞಹǡೝ೐೑
obtains its name) are a,IL, I0, RS and RSh , wheere
a: ideality factor The five reference parameters (aref, Io,ref, IL,ref, Rs,ref, and Rsh,ref)
IL: light current can be obtained by simultanneously solving Equations (5)
I0: diode reverse-saturation current through (9). Using Gauss Sieedel method (appendix), these
RS: series resistance equations are solved with the foollowing values of Voc and Isc.
RSh: shunt resistance Open circuit voltage ( VOC ) = 0.57
0 V
The shape of the current-voltage (I-V) curvve changes as the Short Circuit current ( ISC ) = 0.76
0 A (Depends on the area of
operating conditions (cell temperaturee, TC, effective the solar cell) and following vaalues were obtained:
irradiance, Geff, and incidence angle, ș) channge, therefore it is a ref = 0.0392 eV
expected that the value of the parameters deescribing the curve
Io,ref= ͲǤ͵ʹʹ͵ ‫ ଺ିͲͳ כ‬A
will also change as well. It is observedd that if the five
IL,ref = 0.7630 A
parameters (a, Io, IL, RS and RSh) that corresspond to a specific
Rs,ref = 0.03684 Ÿ
cell temperature and irradiance are knownn, the 5-Parameter
Rsh,ref=10 Ÿ
model is excellent at predicting the shape of the I-V curve.
III. CALCULATION OF REFERENCE PARAMEETERS AT SRC With the use of above values study
s of PV cell is possible only
at particular reference condittions as these parameters vary
To calculate the five reference paraameters (aref, Io,ref, with other environmental paraameters such as irradiance and
IL,ref, Rs,ref, and Rsh,ref), five pieces of informaation are needed at temperature. Their dependencyy is discussed in the following
reference conditions (usually Standard Rated R Conditions, section [1]. The dependence eqquation has been taken from [1].
SRC, in which Tc=25 ºC and Geff=1000 W/m m2). The pieces of
Ideality factor, a short circuit current temperaturre coefficient (ĮIsc), and the air
The ideality factor is a linear function of ceell temperature (in mass modifier (Mam), among otther parameters.
Kelvin). ீ௘௙௙
‫ ܮܫ‬ൌ ሾ‫ ܮܫ‬൅ ߙሺܶܿ െ ܶܿǡǡ ‫݂݁ݎ‬ሻሿ (12)
் ீ௘௙௙ǡ௥௘௙
ܽ ൌ ܽ௥௘௙ Ǥ ೎ (10)
்೎ǡೝ೐೑
Series resistance, Rs
Reverse saturation current, Io The series resistance (Rs) parameter depends on the
The reverse saturation current (Io) depends on effective solar irradiance (Geffff) and the cell temperature (Tc).
temperature, as well as on the material bannd gap energy (İ) It controls the location of the maximum
m power point, therefore
and the number of cells in series (Ns). controls the current and voltagge at the maximum power point.
ଷ ഄಿೞ
൬ଵି
೅೎ǡೝ೐೑
൰
Note that the series resistancee parameter does not affect the
்೎ ೌೝ೐೑ ೅೎
‫ܫ‬଴ ൌ ‫ܫ‬଴ǡ௥௘௙ ൤ ൨ ݁ (11) values of the short circuit curreent or the open circuit voltage.
்೎ǡೝ೐೑
ೇ೘೛ǡೝ೐೑ శ಺಺೘೛ǡೝ೐೑ Ǥೃೞǡೝ೐೑
ܽ௥௘௙ ቊିቆ
ೌೝ೐೑
ቇାோೞǡೝ೐೑ ቋ ‫ܩ‬௘௙௙ǡ௥௘௙
ܴ௦ ൌ ൥ቆ ቇ݁ ൩Ǥ
Light current, IL ‫ܫ‬௢ǡ௥௘௙ ‫ܩ‬௘௙௙
The light current (IL) parameter depends on the ܽ ି൬ೇ೘೛ శ಺೘೛Ǥೃೞ൰
effective solar irradiance (Geff), the cell tem
mperature (TC), the െ Ǥ݁ ೌ
‫ܫ‬଴
(13)

Fig. 3: 5-param
meter based model of PV cell in MATLAB/SIMULIN
NK

Shunt resistance, RSH Parameters a, Io, IL, Rs annd RSH respectively. If these
The shunt resistance (RSH) param meter controls the parameters are substituted in Equation
E (2) the performance of
slope of the I-V curve at short circuit condittions. The value of the PV cell can be predicted. Based
B on above equations stated
RSH has essentially no effect on the prediccted I-V curve for a user interactive PV cell moodel based on SIMULINK has
most of the cell types therefore an equationn to vary the shunt been developed as shown beloow in fig. 3. The basic building
resistance with operating conditions is not neecessary, hence blocks of a PV cell are shown in
i fig. 3. It has four subsystems.
1. Subsystem a: containss model for calculation of
ܴௌு ൌ ܴௌுǡ௥௘௙ (14)
ideality factor, a.
2. Subsystem Io: contains model for calculation for
If conditions other than SRC (or anyy other conditions reverse saturation currrent Io.
being used as reference) are preesent, Equations 3. Subsystem IL: containns model for calculation for
(10),(11),(12),(13) and (14) can be used to calculate the photocurrent, IL.
 4. Subsystem Rs : contains model for calculation
c for
series resistance, Rs.

Ramp signal is used as input (voltage) thatt varies with time

and is used to study V-I curve. By varying values of insolation
(Geff) and cell temperature (Tc), response of PV cell is studied.
The plot of variation of I-V curve witth insolation and
temperature is shown in figure 4 and figure 5.
5
IV. SIMULATION OF A SOLAR CELL MODEL
By varying environmental parameters i.e. innsolation (Geff) and
temperature (TC), which are in W/m2 and Kelvin K respectively
in the developed model for PV cell (Figure 3), 3 we get different
behaviors of I-V and P-V curves.
Following observations are made.
a. Varying temperature (Tc) Fig. 5: Variation of P-V cuurve with respect to Tc
By varying values of Tc different curves arre obtained for the
developed PV cell model.
I-V characteristics: I-V characteristics are a shown in the
figure 4. With variation in Tc, the Isc does noot change however
different values of Voc are observed. As we can see with
increasing Tc, Voc increases Geff being constaant.
P-V characteristics:
Different PV curves are obtained by varyinng Tc, as shown in
figure 5. It is observed that for a single cell, output voltage Voc
is directly proportional to the temperature Tc.
b. Varying insolation (Geff)
By varying Geff, different I-V and P-V currves are obtained.
with increase in temperature, Isc increases, but Voc does not
show any significant change.
I-V characteristics
Geff is varied from 500 to 1000 in steps of 250, Tc being
constant at 298 K, to obtain three differeent I-V curves as
shown in figure 6. As Geff is increased Isc increases whereas Fig. 6: Variation of I-V currve with respect to Geff
Voc does not change significantly.
P-V characteristics:
Different P-V curves are obtaained as shown in figure 7, by
varying Geff from 500 to 1000 in steps of 250. It is clearly
observed that as Geff increases maximum power point shifts
upward on the P-V curve, wheereas there is minute change in
Voc.

Fig. 4: variation of I-V curve with respect to Tc

Fig. 7: Variation of P-V curve with respect to Geff

 VI. CONCLUSION printf("rs= %f\n a= %f\n il= %f\n rsh=%f\n io=%f\n",rsp,aop,ilp,rshp,iop);
getch();
The 5-Parameter model presented in this paper is a user }
interactive model which accepts data and shows corresponding
behavior on SIMULINK platform to predict the output for REFERENCES
specified cell parameters under different operating conditions.
The model requires an easy one time calculation of the five [1] Nguyen D.D., “Modelling and reconfiguration of solar
parameters. photovoltaic arrays under non-uniform shadow conditions”, PhD
Thesis, Chapter 1-2, University of North eastern, January,2008.
APPENDIX [2] I. H. Altas and A.M. Sharaf, “A Photovoltaic Array Simulation
C program to evaluate the reference parameters Model for Matlab-Simulink GUI Environment,” IEEE, Clean
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#include<math.h>
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#include<conio.h>
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void main()
Alone Polycrystalline PV Plant with MPPT Facility,” IEEE Power
{
and Energy Society General Meeting - Conversion and Delivery of
clrscr();
Electrical Energy in the 21st Century, July 20-24, 2008, Pittsburg,
int i;
USA. International Conference on Electrical Energy Systems
float ion=0.0000003221,ilo=0.7613,ao=0.0352,rso=0.0364,rsho=9.70;
(ICEES 2011), 3-5 Jan 2011.
float rs,a,il,rsh,io,c,d,e,z,po,ko,xo,x1,rsp=rso,aop=ao,rshp=rsho,ilp=ilo,iop;
iop=ion;
[4] Jee-Hoon Jung, and S. Ahmed, “Model Construction of Single
io=ion;
Crystalline Photovoltaic Panels for Real-time Simulation,” IEEE
a=ao;
Energy Conversion Congress & Expo, September 12-16, 2010,
rs=rso;
Atlanta, USA.
rsh=rsho;
il=ilo;
[5] S. Nema, R. K. Nema, and G. Agnihotri, “Matlab/ simulink based
float imp=0.69119,vmp=0.45,isc=0.7606,voc=0.5728;
study of photovoltaic cells / modules / array and their experimental
for(i=1;i<=5;i++)
verification,” International Journal of Energy and Environment,
{
pp.487-500, Volume 1, Issue 3, 2010.
c=exp(isc*rs/a);
rs=(rsh/isc)*(il-isc+io*(1-c));
[6] K. H. Hussein and I. Muta, “Maximum photovoltaic power
z=log((il/io)-(voc/(rsh*io))+1);
tracking: An algorithm for rapidly changing atmospheric
a=voc/z;
conditions,” Proc. Inst. Electr.Eng. Gener., Transmiss. Distrib.,
po=imp*rs;
vol. 142, no. 1, pp. 59–64, Jan. 1995.
ko=(vmp+po)/a;
d=exp(ko);
[7] M. Azzouzi, , L. Mazzouz and D. Popescu, "Matlab-Simulink of
il=imp+((vmp+imp*rs)/rsh)+(io*d);
Photovoltaic System Based on a Two-Diode Model", Proceedings
xo=(vmp+imp*rs)/a;
of the World Congress on Engineering 2014 Vol I, WCE 2014,
x1=exp(xo);
July 2 - 4, 2014, London, U.K.
rsh=(rs*imp-vmp*imp)/((io*x1*(vmp-imp*rs)/a)-imp);
e=exp(isc*rs/a);
io=a*rs/(rsh*(rsh-rs)*e);
if(fabs(rs-rso)>0.001)
rso=rs;
else
rsp=rs;
if(fabs(a-ao)>0.01)
ao=a;
else
aop=a;
if(fabs(il-ilo)>0.001)
ilo=il;
else
ilp=il;
if(fabs(rsh-rsho)>0.001)
rsho=rsh;
else
rshp=rsh;
if(fabs(io-ion)>10^(-7))
ion=io;
else
iop=io;
}
printf("c= %f\n",c);
printf("z= %f\n",z);
printf("po= %f\n",po);
printf("ko= %f\n",ko);
printf("d= %f\n",d);
printf("x1= %f\n",x1);

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