Lecture6,7-Logic Design - Transistors To Gates-Final
Lecture6,7-Logic Design - Transistors To Gates-Final
Lecture6,7-Logic Design - Transistors To Gates-Final
Z. Navabi
Topic 2
Zain Navabi
Source Drain
Poly Poly
Sio2 Sio2
p+ p+ n+ n+
Vgs n-well
p substrate p substrate
- - -- - - - - - -
PMOS Channel
NMOS
G G
S D S D
Introduction to Digital System Design - Copyright Zainalabedin Navabi 4
NMOS and PMOS Transistors
Transistor structure
Gate
Source Drain
Poly
Sio2
n+ n+
p substrate
- - -- - - - - - -
Channel
G
S D • capacitance and resistance
• The resistance between the drain and source will stand out very
much when the channel doesn’t exist in the off state.
𝐶𝑔 ~ 𝐿 × 𝑊 𝑅𝑔 ~ 𝐿/𝑊
a w
a w
a w 0 1
1 0
𝑤 = ¬𝑎 = 𝑎 = ~𝑎 = 𝑁𝑂𝑇 𝑎 = 𝑎′
NOT gate: Logic, Boolean, Verilog, VHDL, Text
Introduction to Digital System Design - Copyright Zainalabedin Navabi 11
Building Gates
Inverter Verilog description
inport1 outport1
inport2 outport2
• Instantiation by position
a b c
vdd vdd
1 0 0 1 1 0
a c
• If for some reason such as noise or faulty components, the receiver's input
fall in the forbidden zone between V,IL and VIH, the behavior of the gate is
unpredictable.
𝑁𝑀 = (𝑁𝑀𝐻 + 𝑁𝑀𝐿 )/2
Introduction to Digital System Design - Copyright Zainalabedin Navabi 15
Building Gates
Pull-Up, pulls
NAND gate the output of
the gate to
Vdd
Vdd
#(8,7,9) a b w
0 0 1
0 1 1
Pull-Down, 1 0 1
pulls the
a output of the 1 1 0
gate to gnd
#(6,7,8)
b
#(6,7,8)
b
a b w
0 0 1
0 1 0
w 1 0 0
1 1 0
a b
Vdd
a b
a
w
2
b b
c
c a
W=a+b.c
𝑤 = 𝑎 + 𝑏. 𝑐
a
0
y
b 1
s
y = 𝑠. 𝑎 + 𝑠. 𝑏 b
b
a
a w
b
y = 𝑎. 𝑏 + 𝑏. 𝑎
a7 a0 b7 b0
A
B v
Adder S
OV
s7 s0
A
B
S V
v = 𝐴. 𝐵. 𝑆 + 𝑆. 𝐴. 𝐵
B
A Y
B A Y
A Y
B
A Y
B A Y
A Y
B
A Y
B A Y
A Y
a b
• Event-based simulation
• Cycle-based simulation
a
c
D=2
b
e
D=1