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Assignment 6 Microelectronics Devices To Circuits

The document contains 10 questions and answers related to MOSFET amplifiers. Question 1 asks about the output of a sinusoidal signal applied to a common-drain amplifier at a specific time. Question 2 asks about the property needed for fast operation of MOSFET circuits. The remaining questions cover topics like small signal gain calculation, input impedance, operating regions, and capacitance equations.

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A21126512117 SUKALA ABHIRAM
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362 views

Assignment 6 Microelectronics Devices To Circuits

The document contains 10 questions and answers related to MOSFET amplifiers. Question 1 asks about the output of a sinusoidal signal applied to a common-drain amplifier at a specific time. Question 2 asks about the property needed for fast operation of MOSFET circuits. The remaining questions cover topics like small signal gain calculation, input impedance, operating regions, and capacitance equations.

Uploaded by

A21126512117 SUKALA ABHIRAM
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Week 6: Assignment 6

Q1: A sinusoidal signal with a period of 1 second has a peak of 2.5V at 0.25s and -2.5V at 0.75s. This
signal is applied at the input of a common-drain amplifier, find out the output value at time instant
equal to 2 seconds.

a. 0V
b. 2.5 V
c. − 2.5V
d. − 1V

Ans: (a) 0V

Q2: For fast operation of MOSFET circuit, the MOSFET requires.

a. Lower 𝑔𝑚
b. Higher 𝑔𝑚
c. Does not depend upon 𝑔𝑚
d. None of the above

Ans: (b) Higher 𝑔𝑚

Q3: For common source amplifier with source degeneration, which of the following graph is correct.

(A) (B) (C)

a. A
b. B
c. C
d. None of the above

Ans: (a) A

Q4: Calculate the small signal gain of the given circuit if 𝐼𝐷 = 2𝑚𝐴, 𝜇𝑛 𝐶𝑜𝑥 = 100𝜇𝐴/𝑉 2 , 𝑉𝑇𝐻 =
0.5 𝑉, and 𝜆 = 0
a. 10
b. − 3.33
c. − 4.71
d. − 10

Ans: (c) − 4.71

Q5: Given 𝑔𝑚1 = 20mS and 𝑉𝑇𝐻 =0.4 V, calculate 𝑅𝐷 for drain current of 1mA

a. 1.3 KΩ
b. 1 KΩ
c. 20 KΩ
d. 5 KΩ

Ans: (a) 1.3 KΩ

Q6: The input impedance of the common drain stage is ____ than that of common gate stage.

a. Greater
b. Smaller
c. Equal
d. None of the above

Ans: (a) greater

Q7: The MOSFET can be used to operate as amplifier in_______.

a. Cut-off region
b. Linear/Triode region
c. Saturation region
d. Deep Triode Region

Ans: (c) Saturation region

Q8: The advantage of using source degeneration resistor in Common source amplifier is to provide:.

a. Huge gain
b. Non-Linearity behaviour of amplifier
c. Linearity behaviour of amplifier
d. Low input impedance

Ans: (c) Linearity behaviour of amplifier

Q9: The MOSFET gate-to-source capacitance (𝐶𝑔𝑠 ) in saturation regime can be given as ______
(Neglect overlap capacitances)
1
a. 𝑊𝐿𝐶𝑜𝑥
2
2
b. 𝑊𝐿𝐶𝑜𝑥
3
1
c. 𝑊𝐿𝐶𝑜𝑥
3
1
d. 𝑊𝐿𝐶𝑜𝑥
4

2
Ans: (b) 𝑊𝐿𝐶𝑜𝑥
3

Q10: A MOSFET biased in common-drain configuration is best suited for designing a _______.

a. Transconductance Amplifier
b. Current buffer
c. Transresistance Amplifier
d. Voltage buffer

Ans: (d) Voltage buffer

Week 6: Assignment 6: Brief Explanation

Q1. Explanation:

Since, the time period of input signal is 1 seconds, therefore the value of input at time instant equal to
1 seconds will be zero. As this signal is passed to a common-drain amplifier (or source follower) the
output will be same as the input value.

Q2. Explanation:

A faster circuit requires a higher transconductance.

Q3. Explanation:
1
at low current levels, ≫ 𝑅𝑠 , and hence 𝐺𝑚 ≈ 𝑔𝑚 , resulting in |𝐴𝑣 | = 𝑔𝑚 𝑅𝐷 . As the overdrive and
𝑔𝑚
therefore 𝑔𝑚 increase, the effect of degeneration, 1 + 𝑔𝑚 𝑅𝑆 becomes more significant. For large
values of 𝑉𝑖𝑛 (if the MOSFET is still saturated), 𝐼𝐷 is approximately a linear function of 𝑉𝑖𝑛 and 𝐺𝑚
1
approaches .
𝑅𝑠

Q4. Explanation:

We have

𝑊
𝑔𝑚 = √2𝜇𝑛 𝐶𝑜𝑥 𝐼 = 4.71𝑚𝐴/𝑉
𝐿 𝐷

Thus,

𝐴𝑣 = −𝑔𝑚 𝑅𝐷 = −4.71
Q5. Explanation:
2𝐼𝐷 20𝑚𝐴
𝑔𝑚 = =
𝑉𝐺𝑆 − 𝑉𝑇𝐻 𝑉2

𝑉𝐺𝑆 − 𝑉𝑇𝐻 = 0.5𝑉

𝑉𝐷𝑆 = 𝑉𝐺𝑆 = 𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷 = 0.5

𝑅𝐷 = 1.3𝑘Ω

Q6. Explanation:

The input to a follower stage is at the gate of the MOSFET, hence the input impedance of a follower
will be much higher than that of a common gate stage.

Q7. Explanation:

The MOSFET used as an amplifier in saturation region.

Q8. Explanation:

Introducing degenerative resistor makes the amplifier to operate in linear condition.

Q9. Explanation:
2
Consider 𝐶𝑜𝑣 (overlap capacitance of gate with drain/source) equal to 0, then 𝐶𝑔𝑠 = 𝑊𝐿𝐶𝑜𝑥
3

Q10. Explanation:

A MOSFET biased in common-drain configuration is best suited for designing a voltage buffer.

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