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Analog Electronics Introduction

This document discusses atomic structure and semiconductor materials. It begins by describing Bohr's atomic model and the composition of atoms with electrons, protons, and neutrons. It then discusses electronic configuration, valence bonding through covalent bonding, and discrete energy levels within atoms. Semiconductors are introduced as having conductivity between conductors and insulators, with examples given as silicon, germanium, and gallium arsenide. Intrinsic and extrinsic semiconductors are defined, with extrinsic being doped with acceptor or donor atoms to create p-type or n-type materials respectively. The document concludes by noting that a diode is formed by joining an n-type and p-type semiconductor material at a

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21 views

Analog Electronics Introduction

This document discusses atomic structure and semiconductor materials. It begins by describing Bohr's atomic model and the composition of atoms with electrons, protons, and neutrons. It then discusses electronic configuration, valence bonding through covalent bonding, and discrete energy levels within atoms. Semiconductors are introduced as having conductivity between conductors and insulators, with examples given as silicon, germanium, and gallium arsenide. Intrinsic and extrinsic semiconductors are defined, with extrinsic being doped with acceptor or donor atoms to create p-type or n-type materials respectively. The document concludes by noting that a diode is formed by joining an n-type and p-type semiconductor material at a

Uploaded by

ashfaque.eee.20200205055
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
You are on page 1/ 4

Page |1

Atomic Structure
Bohr’s Atomic Model:
Total no. of electrons
= 14 (Si)
= 32 (Ge)
= 31 (Ga)
= 33 (As)

An atom is composed of:


Electron Fig-1: Silicon (Si) Model
Proton
Neutron
[Proton and Neutron combine to form the nucleus]

Maximum electron capacity of any energy shell = 2n2 [where n = 1, 2, 3,….]


Electronic Configuration of Si = 1s22s22p63s23p2

Valence Bonding:
Bonding between valence electrons is valence bonding.
Covalent Bonding:
Bonding between valence electrons of two different atoms by mutual sharing is
called covalent bond.

Energy Level:
Within the atomic structure there are specific energy
levels for each shell and orbiting electron. The energy
levels of each shell will be different for every
element.

Fig-2: Discrete energy levels in


isolated atomic structure
2|Page

Energy Gap (Eg):


The distance between valence band and conduction band is
called energy gap.
Eg = 1.1eV (Si)
Eg = 0.67eV (Ge)
Eg = 1.43eV (GaAs)
Insulator, Eg > 5eV Fig-3: Energy Band Diagram

Conductor, Eg = 0 [also can be negative]

Semiconductor
Semiconductor are a special class of elements having conductivity between that of
a good conductor and that of an insulator. The three semiconductors that are used
most frequently in the construction of electronic devices are Silicon (Si),
Germanium (Ge), and Gallium arsenide (GaAs).
Intrinsic Semiconductor:
The term intrinsic is applied to any semiconductor material that has been carefully
refined to reduce the number of impurities to a very low level as pure as can be
made i.e. almost 99% purity.
Extrinsic Semiconductor:
An impure semiconductor material that has been subjected to the doping process is
called an extrinsic semiconductor material.
There are two kinds of extrinsic semiconductor materials:
(i) p-type Extrinsic Semiconductor
(ii) n-type Extrinsic Semiconductor
Page |3

p-type Semiconductor:
p-type material is created by introducing atoms to a
silicon base that have three valence electrons e.g.
Boron (B), Gallium (Ga), Indium (In) etc.
Majority charge carrier: Hole
Minority charge carrier: Electron
Diffused impurities with three valence electrons are called acceptor atoms.

Fig-4: Boron (B) impurity in p-type


material

n-type Semiconductor:
n-type material is created by introducing atoms to a
silicon base that have five valence electrons e.g.
Antimony (Sb), Arsenic (As), Phosphorus (P) etc.
Majority charge carrier: Electron
Minority charge carrier: Hole
Diffused impurities with five valence electrons are called donor atoms.

Fig-5: Antimony (Sb) impurity in n-


type material
4|Page

Diode
The semiconductor material created by simply joining an n-type and a p-type
material together is called diode. The junction is called p-n junction.

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