http://www.fujielectric.

com/products/semiconductor/

2MBI600VE-120-50 IGBT Modules

IGBT MODULE (V series)

1200V / 600A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Tc=100°C 600
Inverter

Ic Continuous
Tc=25°C 700
Collector current Ic pulse 1ms 1200
-Ic 600
-Ic pulse 1ms 1200
Collector power dissipation Pc 1 device 4800 W
Junction temperature Tj 175
Operating junction temperature (under switching conditions) Tjop 150
°C
Case temperature TC 125
Storage temperature Tstg -40 ~ +125
Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 2500 VAC
Mounting (*2) 6.0
Screw torque - Nm
Terminals (*3) 5.0
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5-5.0 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Items Symbols Conditions Units
min. typ. max.
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 2.0 mA
Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 800 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 600mA 6.0 6.5 7.0 V
Tj=25°C - 2.05 2.55
VCE (sat)
Tj=125°C - 2.40 -
(terminal)
VGE = 15V Tj=150°C - 2.45 -
Collector-Emitter saturation voltage V
IC = 600A Tj=25°C - 1.75 2.15
VCE (sat)
Tj=125°C - 2.05 -
(chip)
Tj=150°C - 2.10 -
Internal gate resistance Rg(int) - - 1.3 - Ω
Inverter

Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 48.5 - nF

ton VCC = 600V LS = 30nH - 0.60 -
Turn-on time tr IC = 600A - 0.20 -
tr (i) VGE = ±15V - 0.05 - µsec
toff RG = 0.62Ω - 0.80 -
Turn-off time Tj = 150°C
tf - 0.08 -
Tj=25°C - 1.85 2.45
VF
Tj=125°C - 2.00 -
(terminal)
VGE = 0V Tj=150°C - 1.95 -
Forward on voltage V
IF = 600A Tj=25°C - 1.70 2.15
VF
Tj=125°C - 1.85 -
(chip)
Tj=150°C - 1.80 -
Reverse recovery time trr IF = 600A - 0.15 - µsec
Thermal resistance characteristics
Characteristics
Items Symbols Conditions Units
min. typ. max.
IGBT - - 0.031
Thermal resistance (1device) Rth(j-c)
FWD - - 0.054 °C/W
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.0125 -
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

1 7773b
MARCH 2014
2MBI600VE-120-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/

Characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 150°C / chip
1400 1400
VGE=20V 15V 12V VGE= 20V 15V
1200 1200
12V

Collector current: Ic [A]

Collector current: Ic [A]

1000 1000

800 800

600 10V 600 10V

400 400

200 200 8V
8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage: VCE [V] Collector-Emitter voltage: VCE [V]

Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage
VGE= 15V / chip Tj= 25°C / chip
1400 10
Tj=25°C 125°C
1200
Collector-Emitter Voltage: VCE [V]

150°C 8
Collector Current: Ic [A]

1000

6
800

600 4

400
Ic=1200A
2
Ic=600A
200
Ic=300A

0 0
0 1 2 3 4 5 5 10 15 20 25
Collector-Emitter Voltage: VCE [V] Gate-Emitter Voltage: VGE [V]

Gate Capacitance vs. Collector-Emitter Voltage Dynamic Gate Charge (typ.)

VGE= 0V, ƒ= 1MHz, Tj= 25°C Vcc=600V, Ic=600A, Tj= 25°C
100 20 800
Gate Capacitance: Cies, Coes, Cres [nF]

Collector-Emitter voltage: VCE [V]

15 600
Gate-Emitter voltage: VGE [V]

VCE
Cies 10 400

5 200

10 0 0
***

-5 -200
Cres VGE
-10 -400
Coes
-15 -600

1 -20 -800
0 5 10 15 20 25 30 -6000 -4000 -2000 0 2000 4000 6000
Collector-Emitter voltage: VCE [V] Gate charge: Qg [nC]

2
2MBI600VE-120-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=0.62Ω, Tj=125°C Vcc=600V, VGE=±15V, RG=0.62Ω, Tj=150°C
10000 10000
Switching time: ton, tr, toff, tf [nsec]

Switching time: ton, tr, toff, tf [nsec]

1000 toff 1000 toff
ton ton

tr tr
100 100 tf
tf

10 10
0 200 400 600 800 1000 1200 1400 0 200 400 600 800 1000 1200 1400

Collector current: Ic [A] Collector current: Ic [A]

Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C Vcc=600V, VGE=±15V, RG=0.62Ω, Tj=125°C, 150°C
10000
Switching loss: Eon, Eoff, Err [mJ/pulse]

140
Switching time: ton, tr, toff, tf [nsec]

Tj=125oC
120 Eoff
Tj=150oC
toff
ton 100 Eon
1000
tr 80

60
Err
100 40
tf
20

0
10 0 200 400 600 800 1000 1200 1400
0.1 1 10 100

Gate resistance: RG [Ω] Collector current: Ic [A]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C +VGE=15V, -VGE=15V, RG=0.62Ω, Tj=150°C
250 1400
Switching loss: Eon, Eoff, Err [mJ/pulse]

Tj=125oC
Tj=150oC Eon 1200
200
Collector current: Ic [A]

1000

150
800

600
100
Eoff
400
50
200
Err
0 0
0 1 10 100 0 200 400 600 800 1000 1200 1400

Gate resistance: RG [Ω] Collector-Emitter voltage: VCE [V]

(Main terminals)

3
2MBI600VE-120-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.) Reverse Recovery Characteristics (typ.)
chip Vcc=600V, VGE=±15V, RG=0.62Ω, Tj=125°C
1400 10000

Reverse recovery time: trr [nsec]

Reverse recovery current: Irr [A]
1200 Tj=25°C
Forward current: IF [A]

1000 1000 lrr

800
trr
600 125°C
100
400

200 150°C
10
0 0 200 400 600 800 1000 1200 1400
0 1 2 3
Forward on voltage: VF [V] Forward current: IF [A]

Reverse Recovery Characteristics (typ.)

Transient Thermal Resistance (max.)
Vcc=600V, VGE=±15V, RG=0.62Ω, Tj=150°C
10000 0.1
FWD
Reverse recovery time: trr [nsec]
Reverse recovery current: Irr [A]

Thermal resistanse: Rth(j-c) [°C/W]

1000 lrr IGBT

0.01
trr

100

τ [sec] 0.0009 0.0178 0.0541 0.0557

Rth IGBT 0.00287 0.00664 0.01443 0.00739
[°C/W] FWD 0.00492 0.01138 0.02474 0.01267
10 0.001
0.001 0.01 0.1 1
0 200 400 600 800 1000 1200 1400

Forward current: IF [A] Pulse Width : Pw [sec]

FWD safe operating area (max.)

Tj=150°C
1400

1200
Reverse recovery current: Irr [A]

1000 Pmax=900kW

800

600

400

200

0
0 400 800 1200 1600

Collector-Emitter voltage: VCE [V]

(Main terminals)
4
2MBI600VE-120-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/

Outline Drawings (Unit: mm)

Weight: 470g (typ.)

C1
Equivalent Circuit

G1
E1
C2E1

G2
E2

E2

5
2MBI600VE-120-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/

WARNING

1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.

2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.

3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.

4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment

6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment

7.Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved.

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.

6
Technical Information IGBT Modules

Please refer to URLs below for futher information about products, application manuals and technical documents.
关于本规格书中没有记载的产品信息，应用手册，技术资料等，请参考以下链接。
本データシートに記載されていない製品情報 , アプリケーションマニュアル , 技術資料は以下の URL をご参照下さい。

FUJI ELECTRIC Power Semiconductor WEB site

日本 www.fujielectric.co.jp/products/semiconductor/
Global www.fujielectric.com/products/semiconductor/
中国 www.fujielectric.com.cn/products/semiconductor/
Europe www.fujielectric-europe.com/components/semiconductors/
North America www.americas.fujielectric.com/components/semiconductors/

Information
日本
1 半導体総合カタログ www.fujielectric.co.jp/products/semiconductor/catalog/
2 製品情報 www.fujielectric.co.jp/products/semiconductor/model/
3 アプリケーションマニュアル www.fujielectric.co.jp/products/semiconductor/model/igbt/application/
4 技術資料 www.fujielectric.co.jp/products/semiconductor/model/igbt/technical/
5 マウンティングインストラクション www.fujielectric.co.jp/products/semiconductor/model/igbt/mounting/
6 IGBT 損失シミュレーションソフト www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level 損失シュミレーションソフト www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation_3level/
8 富士電機技報 www.fujielectric.co.jp/products/semiconductor/journal/
9 製品のお問い合わせ www.fujielectric.co.jp/products/semiconductor/contact/
10 改廃のお知らせ www.fujielectric.co.jp/products/semiconductor/discontinued/

Global
1 Semiconductors General Catalog www.fujielectric.com/products/semiconductor/catalog/
2 Product Information www.fujielectric.com/products/semiconductor/model/
3 Application Manuals www.fujielectric.com/products/semiconductor/model/igbt/application/
4 Technical Documents www.fujielectric.com/products/semiconductor/model/igbt/technical/
5 Mounting Instructions www.fujielectric.com/products/semiconductor/model/igbt/mounting/
6 IGBT Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/
8 Fuji Electric Journal www.fujielectric.com/products/semiconductor/journal/
9 Contact www.fujielectric.com/products/semiconductor/contact/
10 Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

中国
1 半导体综合目录 www.fujielectric.com.cn/products/semiconductor/catalog/
2 产品信息 www.fujielectric.com.cn/products/semiconductor/model/
3 应用手册 www.fujielectric.com.cn/products/semiconductor/model/igbt/application/
4 技术资料 www.fujielectric.com.cn/products/semiconductor/model/igbt/technical/
5 安装说明书 www.fujielectric.com.cn/products/semiconductor/model/igbt/mounting/
6 IGBT 损耗模拟软件 www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level 损耗模拟软件 www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation_3level/
8 富士电机技报 www.fujielectric.com.cn/products/semiconductor/journal/
9 产品咨询 www.fujielectric.com.cn/products/semiconductor/contact/
10 产品更改和停产信息 www.fujielectric.com.cn/products/semiconductor/discontinued/
2015-10