Lecture10 Sequential
Lecture10 Sequential
Hyeon-Min Bae
2 storage mechanisms
• positive feedback, static
• Charge storage, dynamic
• In our text:
– a latch is level sensitive
– a register is edge-triggered
• There are many different naming conventions
– For instance, many books call edge-triggered elements
flip-flops
– This leads to confusion however
Transparent in one clock state, hold the final value when closed
Q 0 Q
1
D 0 D 1
CLK CLK
• Transmission gate
V o1 Vi2
V i1 V o2
A
V i2 =V o1
Bi-Stability : two
C
stable states (0 and 1)
B
V i1 =V o2
CLK
D Q
CLK
CLK
D D
CLK
CLK
QM
CLK
QM
CLK
CLK
q Latch q Register
stores data when stores data when
clock is low clock rises
D Q D Q
Clk Clk
Clk Clk
D D
Register Latch
CLK
t Register
tsu thold D Q
D DATA
STABLE CLK
t
tc 2 q
Q DATA
STABLE t
Also:
tcdreg + tcdlogic > thold
tcd: contamination delay =
minimum delay
tclk-Q + tp,comb + tsetup = T
• Y(n)=X(n)-a or Y(n)=X(n)+a
Purpose:
• Increase circuit speed
• Reduce power
REG
REG
a a
REG
REG
REG
REG
log Out CLK log Out
CLK
REG
REG
CLK CLK
Reference Pipelined
wT t
From DV » DVinit e
1 ∆𝑉
𝑡= 𝑙𝑛
𝜔 % ∆𝑉&'&(
Hold-1 case
Hold-1 case
Hold-1 case
Hold-1 case
Hold-1 case
CLK X CLK
Q
A
D
B
CLK CLK
t su = t p ,n
t su = t p ,n + t p ,inv
tclk -Q = 2t p ,inv + t p ,n OR tclk -Q = t p ,inv + t p ,n
th = 0
CLK X CLK
Q
A
D
B
CLK CLK
(a) Schematic diagram
CLK
CLK
(b) Overlapping clock pairs
Clocked CMOS
à C2MOS
VDD VDD
M2 M6
CLK
clk CLK
0 M4 0 M8
X
D Q
CLK
CLK clk
M1 M5
VDD VDD
M2 M6
clk
M1 M5
N P
Logic
Latch Latch
Logic
Race condition!
But smaller hardware, we will revisit
Clk Mp Clk Me
1®1
Out1
1®0
In1 In4 PUN
In2 PDN In5
0®0
In3 0®1
Out2
(to PDN)
Clk Me Clk Mp
Clk Mp Clk Me
1®1
Out1
1®0
In1 In4 PUN
In2 PDN In5
0®0
In3 0®1
Out2
(to PDN)
Clk Me Clk Mp
to other to other
PDN’s PUN’s
Tsetup : 1 inverter
Thold : less than 1 inverter (discharge through M4 and M5 - delay of M1)
Tc2q : 3 inverter
Master-Slave Pulse-Triggered
Latches Latch
L1 L2 L
Data Data
D Q D Q D Q
VDD VDD
M3 M6 VDD
CLK
Q
D CLKG CLKG MP CLKG
M2 M5
X
MN
M1 M4
CLK
CLKG
CLK P1 P3
x Q
M6
M3
D P2 M5
M2
M4
M1 CLKD
Vou t V OH
In Out
VDD
M2 M4
Vin X Vout
M1 M3
2.5 2.5
2.0 2.0
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5
Vin (V) Vin (V)
Voltage-transfer characteristics with hysteresis. The effect of varying the ratio of the
PMOS device M4. The width is k* 0.5m m.
VDD
M4
M6
M3
In Out
M2
X M5
VDD
M1
Lower threshold
1 1
K1VDSAT (Vin - Vth 0 - VDSAT ) = K 5VDSAT (VDD - Vx - Vth - V DSAT)
2 2
Vth = Vth 0 + g ( 2fF + Vx - 2fF )
Vin = Vx + Vth